CN221325769U - Flexible sensor with stored parameter information based on PI substrate - Google Patents
Flexible sensor with stored parameter information based on PI substrate Download PDFInfo
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- CN221325769U CN221325769U CN202322921589.6U CN202322921589U CN221325769U CN 221325769 U CN221325769 U CN 221325769U CN 202322921589 U CN202322921589 U CN 202322921589U CN 221325769 U CN221325769 U CN 221325769U
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Abstract
The utility model relates to a flexible sensor with stored parameter information based on a PI substrate, which comprises a flexible pressure sensor and a sensor interface, wherein the flexible pressure sensor comprises a PI flexible substrate and a pressure detection unit arranged on the PI flexible substrate, and the PI flexible substrate is also integrated with a storage unit and a temperature sensor unit. According to the utility model, the storage chip is integrated on the flexible sensor, and the electronic identity card is endowed to the sensor through the storage chip, so that the design of a standardized and batched production and calibration system is facilitated in the production stage, and the mass production of the sensor is realized. At the user end, the main control system can be matched with different flexible sensors to realize the connection and the use without factory return calibration or field calibration equipment establishment.
Description
Technical Field
The utility model relates to the technical field of flexible sensors, in particular to a flexible sensor with stored parameter information based on a PI substrate.
Background
The flexible sensor is used as a novel sensor technology, and is widely applied to the fields of consumer electronics, medical equipment, intelligent home, robots and the like by virtue of the advantages of good flexibility, ductility, even free bending and folding, flexible and diversified structural forms and the like. Compared with the MEMS silicon-based sensor, the existing flexible sensor mainly has the problems of consistency error, temperature drift, static drift and the like influenced by working environments due to hysteresis effect. In addition, the output signal of the sensor is attenuated along with the increase of the service life.
Aiming at the problems, the prior art aims at calibrating the product and storing the calibration parameters in a main control chip of a back-end control board, but the problems to be solved in the method are as follows:
1. Users often do not have accurate calibration conditions and need to return to the manufacturer for calibration.
2. The sensor cannot be replaced arbitrarily, and the sensor needs to be recalibrated every time it is replaced.
3. The sensor calibration parameters need to be transmitted in an electronic document mode, and data security risks exist in modes such as mail, optical discs, U discs and the like.
Disclosure of utility model
The utility model solves the technical problem of providing a flexible sensor with stored parameter information based on a PI substrate.
The technical scheme adopted for solving the technical problems is as follows:
The flexible sensor based on the PI substrate and provided with the parameter information storage comprises a flexible pressure sensor based on the PI substrate design and a sensor interface, wherein the sensor interface is arranged at the front end of the flexible pressure sensor, the flexible pressure sensor comprises a PI flexible substrate and a pressure detection unit arranged on the PI flexible substrate, and the PI flexible substrate is further integrated with a storage unit and a temperature sensor unit; the storage unit comprises a storage chip for storing production information, calibration information and use information of the flexible pressure sensor, the temperature sensor unit comprises a temperature sensor for measuring the temperature of the flexible pressure sensor during operation, the pressure detection unit, the storage unit and the temperature sensor unit are electrically connected to the sensor interface through lead rules arranged on the flexible pressure sensor and are electrically connected with an external main control system through the sensor interface, so that required working voltage is provided for the pressure detection unit, the storage unit and the temperature sensor unit, and data transmission and communication are carried out.
Further, the flexible pressure sensor comprises a lower flexible substrate, an upper flexible substrate and the pressure detection unit arranged between the upper flexible substrate and the lower flexible substrate, wherein the lower flexible substrate and the upper flexible substrate are connected together through an elastic supporting layer, and the pressure detection unit is arranged at the inner periphery of the elastic supporting layer and is surrounded by the elastic supporting layer; the pressure detection unit comprises an electrode layer and a sensing layer, wherein the electrode layer and the sensing layer are respectively arranged on the upper flexible substrate and the lower flexible substrate and led out to the sensor interface through leads arranged on the upper flexible substrate and the lower flexible substrate.
Further, the elastic supporting layer adopts a rectangular structure, a C-shaped structure or a strip-shaped structure, and is connected with the upper flexible substrate and the lower flexible substrate and supports and separates the upper flexible substrate and the lower flexible substrate.
Further, a plurality of miniature elastic bulge structures are arranged between the upper flexible substrate and the lower flexible substrate.
Preferably, the micro elastic bulge structure adopts spherical bulges or strip bulges.
Further, the storage unit and the temperature sensor unit are arranged at a position closer to the sensor interface, and a protective adhesive layer is arranged through dispensing treatment.
Furthermore, the flexible pressure sensor is further provided with a protective layer through an encapsulation layer, and the encapsulation layer and the protective layer wrap up the pressure detection unit, the storage unit and the temperature sensor unit for protection, and only the sensor interface is reserved for electric connection with the main control system.
The beneficial effects of the utility model are as follows:
1. Compared with the mode that the signal processing of the sensor is realized through a rear-end processing circuit at present, the utility model creates the method that an integrated circuit chip or a circuit module with a data storage function is integrated on a flexible sensor in advance, so that the production information, the calibration information and the working information of the sensor can be stored, the modularized design and the production of the sensor and a main control circuit can be realized, and the user can conveniently replace the needed sensor model at any time.
2. The storage chip is integrated on the flexible sensor, the characteristic parameters of the sensor can be stored in the storage chip, an electronic identity card can be endowed to the sensor, and the sensor is beneficial to designing a standardized and batched production and calibration system in the production stage, so that the mass production of the sensor is realized. At the user end, the main control system can be matched with different flexible sensors to realize the connection and the use without factory return calibration or field calibration equipment establishment.
Drawings
FIG. 1 is a block diagram of the present utility model;
FIG. 2 is an exploded view of an embodiment of the present utility model;
FIG. 3 is a combined state diagram of FIG. 2;
FIG. 4 is a schematic diagram of a system of the present utility model;
FIG. 5 is a temperature corrected comparison chart of the present utility model;
FIG. 6 is a graph of attenuation correction versus the present utility model;
Wherein:
1. The device comprises a flexible pressure sensor 2, a storage unit 3, a temperature sensor unit 4 and a sensor interface;
101. The pressure detection unit comprises a pressure detection unit 11, a PI lower flexible substrate 12, an elastic supporting layer 13, an upper flexible substrate 14, an encapsulation layer 15, a protection layer 111, an electrode layer 131 and a sensing layer.
Detailed Description
In order that the above objects, features and advantages of the utility model will be readily understood, a more particular description of the utility model will be rendered by reference to the appended drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present utility model. The present utility model may be embodied in many other forms than described herein and similarly modified by those skilled in the art without departing from the spirit of the utility model, whereby the utility model is not limited to the specific embodiments disclosed below.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. The terminology used herein in the description of the utility model is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1-4, the utility model provides a flexible sensor with stored parameter information based on a PI substrate, which comprises a flexible pressure sensor 1 based on a PI substrate design, wherein a storage unit 2 and a temperature sensor unit 3 are integrated on the flexible pressure sensor 1. The memory unit 2 is used for storing production, calibration and usage information of the flexible sensor, including a memory chip. The temperature sensor unit 3 is used for measuring the ambient temperature of the flexible sensor during operation, including the temperature sensor.
The flexible pressure sensor adopts a capacitive, resistive or piezoelectric flexible pressure sensor or an array flexible pressure sensor, and a substrate of the flexible pressure sensor adopts a flexible substrate of a PI substrate.
The memory chip adopts EEPROM (electrically erasable programmable read-only memory), FLASH (FLASH memory chip), RFID chip and the like. The data content stored by the memory chip comprises: production information, calibration information, usage information, etc.
The production information comprises: sensor serial number, production batch, serial number, delivery date, manufacturer, workshop, production line and other information.
The calibration information includes: sensor factory calibration parameters (including but not limited to environment configured at calibration, matched detection circuit parameters, pressure and sensor output signal correspondence, characteristic curve fitting parameters, etc.).
The usage information includes: the number of sensor uses, the duration, the product quality status, etc.
The temperature sensor adopts a temperature sensor based on NTC or PTC principle, the packaging form is not limited, and SMD patch type is preferably selected.
Furthermore, the flexible sensor with the stored parameter information based on the PI substrate also comprises a sensor interface 4, wherein the sensor interface 4 comprises a communication interface, a power supply interface and a data interface. The communication interface is used for communication and data transmission of the memory chip and the temperature sensor, and adopts wired interfaces such as IIC, SPI, CAN, 485, 232, TTL and the like or wireless interfaces such as RFID and the like.
Example 1:
As shown in fig. 1-3, the structure diagram of the flexible sensor based on the PI substrate and provided with the stored parameter information comprises a flexible pressure sensor 1, a storage unit 2, a temperature sensor unit 3 and a sensor interface 4. The flexible pressure sensor 1 is designed based on a PI substrate and comprises a PI substrate and a pressure detection unit 101 arranged on the PI substrate. The storage unit 2 and the temperature sensor unit 3 are regularly arranged and welded on the flexible pressure sensor 1, and the pressure detection unit, the storage unit and the temperature sensor unit are electrically connected with the sensor interface through leads arranged on the substrate.
The memory chips, the temperature sensors and the related electronic components in the memory units and the temperature sensor units are directly welded to the corresponding bonding pads of the PI substrate through an SMT process.
As shown in fig. 2, the flexible pressure sensor 1 comprises a PI lower flexible substrate 11, on which the upper flexible substrate 13 is provided by means of an elastic support layer 12. Wherein the elastic support layer 12 adhesively fixes the PI lower flexible substrate 11 and the upper flexible substrate 13 while acting as a spacer layer for the PI lower flexible substrate and the upper flexible substrate. The pressure detecting unit 101 is disposed on the inner periphery of the elastic supporting layer 12 and is wrapped by the elastic supporting layer 12.
The pressure detecting unit 101 includes an electrode layer 111 and a sensing layer 131, and the electrode layer 111 and the sensing layer 131 are disposed on the upper surface of the PI lower flexible substrate 11 and the lower surface of the upper flexible substrate 13, respectively. Of course, the electrode layer and the sensing layer can be arranged in reverse, the sensing layer is arranged on the PI lower flexible substrate, and the electrode layer is arranged on the upper flexible substrate.
The specific materials of the electrode layer and the sensing layer are not limited, and may be:
1. When the electrode layer and the sensing layer are made of conductor materials with smaller impedance, the pressure detection principle is to increase or decrease the contact area between the electrode layer and the sensing layer so as to change the contact resistance value, thereby realizing pressure detection. Conductor materials include, but are not limited to, silver, conductive polymer materials, conductive nanowires, inorganic conductive materials (carbon-based materials), and the like.
2. When the electrode layer is made of a conductor material with smaller impedance, and the sensing layer is made of a semiconductor material with a sensor function, the pressure detection principle is that the pressure detection is realized through the piezoresistive effect of the semiconductor material with the sensor function. Semiconductor materials include, but are not limited to, carbon nanocomposites.
The material of the upper flexible substrate 13 is not limited, and includes, but is not limited to, PI substrate or PET substrate, preferably PI substrate.
Further, the specific structure of the elastic support layer 12 is not limited, and includes, but is not limited to, rectangular, C-shaped, or bar-shaped structures. As illustrated in fig. 2, the pressure detecting unit 101 is wrapped and sealed inside the PI lower flexible substrate 11 and the upper flexible substrate 13 using a rectangular structure. The pressure detection unit can also be wrapped by adopting a C-line structure, and a right side opening is reserved. Or strip-shaped is arranged on the upper side and the lower side of the PI lower flexible substrate and the upper flexible substrate, and a left side opening and a right side opening are reserved between the PI lower flexible substrate and the upper flexible substrate.
Further, a plurality of miniature elastic bulge structures are further arranged between the upper flexible substrate and the lower flexible substrate, the plurality of elastic bulge structures are spherical bulges or strip-shaped bulges, and elasticity between the upper flexible substrate and the lower flexible substrate can be increased through the plurality of elastic bulge structures, so that the sensitivity of the flexible pressure sensor can be increased.
In this embodiment, the storage unit and the temperature sensor unit are disposed closer to the sensor interface, and the circuit is protected by using a dispensing process, so that the reliability of the flexible sensor is improved.
In the solution provided in embodiment 1, the flexible pressure sensor includes a pressure detecting unit, a storage unit, a temperature sensor unit and a sensor interface unit, where several unit circuits are integrated together to form an FPC.
Example 2:
As shown in fig. 2-3, further, according to embodiment 1, the upper end of the flexible pressure sensor 1 is adhered with the protective layer 15 through the encapsulation layer 14, and the encapsulation layer and the protective layer encapsulate the pressure detection unit 101, the storage unit 2 and the temperature sensor unit 3 for protection, so that only the sensor interface 4 is electrically connected with an external main control system. The protective layer can be made of the same material as the substrate, or other flexible materials such as PET (polyethylene terephthalate) can be used as the protective layer.
The material of the protective layer 15 is not limited, and includes, but is not limited to, PI substrate or PET substrate, preferably PI substrate.
Compared with the mode that the signal processing of the sensor is realized through a back-end processing circuit at present, the utility model creates the integrated circuit chip or the circuit module with the data storage function which is integrated on the flexible sensor in advance, can store the production information, the calibration information and the working information of the sensor, can realize the modularized design and the production of the sensor and the main control circuit, and is convenient for users to replace the needed sensor model at any time.
According to the temperature drift characteristics of the flexible sensor, the temperature sensor is integrated on the flexible sensor, the working temperature of the sensor can be monitored in real time, and the output signal quantity of the sensor is compensated and calculated in advance at the sensor end according to the temperature drift coefficient of the sensor, so that the signal consistency of the sensor in different working environments is improved. And then the static drift error of the sensor is reduced through an algorithm, the static drift curve of the sensor is stored in the sensor, and after the sensor is started to work, the output signal quantity is compensated according to the working time of the sensor, so that the static working error of the sensor is reduced, the self-compensation of the sensor end is realized, and the use convenience of the sensor is improved.
For this purpose, as shown in fig. 5, a temperature correction comparison chart for calibration of the sensor temperature drift performance is shown. In the sensor research and development test stage, the temperature drift performance of the sensor, namely the change percentage of the sensor output signal quantity along with the change of the working environment temperature under the same input physical quantity condition, is measured. This parameter is written into a memory chip on top of the flexible sensor. When the main control system works, the main control system firstly reads out the signal, then compensates the correction coefficient into the calculated pressure value according to the measured ambient temperature, and the corrected output signal quantity of the curve sensor does not change along with the temperature.
The specific correction formula is as follows:
Calculating an external physical quantity from the measured operating temperature and the sensor output signal quantity according to the following function:
y＝f25℃(x)×G(temp)
Wherein:
G (temp) is the drift function of the sensor, which is the ratio of the output signal of the sensor at the current operating temperature to the operating temperature of 25 ℃):
In the above formula:
S out(temp) is the output signal value of the sensor under the current working temperature condition;
S out(25℃) is the output signal value of the sensor under the working condition of 25 ℃;
f 25℃ is a function of the external physical quantity as a function of the sensor output signal quantity at 25 ℃.
As shown in fig. 6, a comparison of the sensor signal attenuation correction is shown. In the sensor research and development test stage, the attenuation performance of the sensor is measured. I.e. the attenuation of the sensor output signal with the increase of the sensor operating time/frequency under the same condition of the input physical quantity. This parameter is written to a memory integrated circuit above the flexible sensor. When the main control system works, the main control system firstly reads out the pressure value, then compensates the correction coefficient into the calculated pressure value according to the working history of the sensor, and the corrected pressure value is stabilized within an error range of +/-3 percent.
Calculating an external physical quantity according to the read sensor operation time length data and the sensor output signal quantity stored on the chip:
y＝fT0(x)×G(t)
Wherein:
G (T) is the decay function of the sensor, and is the ratio of the output signals of the sensor under the current working time length condition to the initial T0 working condition:
f T0 is the functional relationship between the external physical quantity of the sensor and the output signal quantity of the sensor under the initial T0 working condition of the sensor.
While the foregoing is directed to embodiments of the present utility model, other and further details of the utility model may be had by the present utility model, it should be understood that the foregoing description is merely illustrative of the present utility model and that no limitations are intended to the scope of the utility model, except insofar as modifications, equivalents, improvements or modifications are within the spirit and principles of the utility model.
Claims (7)
1. A flexible sensor based on PI substrate and provided with stored parameter information is characterized in that: the flexible pressure sensor comprises a flexible pressure sensor and a sensor interface, wherein the flexible pressure sensor is designed based on a PI substrate, the sensor interface is arranged at the front end of the flexible pressure sensor, the flexible pressure sensor comprises a PI flexible substrate and a pressure detection unit arranged on the PI flexible substrate, and a storage unit and a temperature sensor unit are further integrated on the PI flexible substrate; the storage unit comprises a storage chip for storing production information, calibration information and use information of the flexible pressure sensor, the temperature sensor unit comprises a temperature sensor for measuring the temperature of the flexible pressure sensor during operation, the pressure detection unit, the storage unit and the temperature sensor unit are electrically connected to the sensor interface through lead rules arranged on the flexible pressure sensor and are electrically connected with an external main control system through the sensor interface, so that required working voltage is provided for the pressure detection unit, the storage unit and the temperature sensor unit, and data transmission and communication are carried out.
2. A PI substrate based flexible sensor with stored parameter information, according to claim 1, wherein: the flexible pressure sensor comprises a lower flexible substrate, an upper flexible substrate and the pressure detection unit arranged between the upper flexible substrate and the lower flexible substrate, wherein the lower flexible substrate and the upper flexible substrate are connected together through an elastic supporting layer, and the pressure detection unit is arranged in the elastic supporting layer and is surrounded by the elastic supporting layer; the pressure detection unit comprises an electrode layer and a sensing layer, wherein the electrode layer and the sensing layer are respectively arranged on the upper flexible substrate and the lower flexible substrate and led out to the sensor interface through leads arranged on the upper flexible substrate and the lower flexible substrate.
3. A PI substrate based flexible sensor with stored parameter information, according to claim 2, wherein: the elastic supporting layer adopts a rectangular structure, a C-shaped structure or a strip-shaped structure, and is connected with the upper flexible substrate and the lower flexible substrate and supports and separates the upper flexible substrate and the lower flexible substrate.
4. A PI substrate based flexible sensor with stored parameter information, according to claim 3, wherein: and a plurality of miniature elastic bulge structures are arranged between the upper flexible substrate and the lower flexible substrate.
5. A PI substrate based flexible sensor with stored parameter information as in claim 4, wherein: the miniature elastic bulge structures adopt spherical bulges or strip bulges.
6. A PI-substrate based flexible sensor with stored parameter information according to any one of claims 1-5, wherein: the storage unit and the temperature sensor unit are arranged at a place close to the sensor interface and are provided with a protective adhesive layer through dispensing treatment.
7. A PI substrate based flexible sensor with stored parameter information, according to claim 6, wherein: the flexible pressure sensor is further provided with a protective layer through a packaging layer, and the packaging layer and the protective layer wrap up the pressure detection unit, the storage unit and the temperature sensor unit for protection, and only the sensor interface is reserved for electric connection with the main control system.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202322921589.6U CN221325769U (en) | 2023-10-30 | 2023-10-30 | Flexible sensor with stored parameter information based on PI substrate |
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| CN202322921589.6U CN221325769U (en) | 2023-10-30 | 2023-10-30 | Flexible sensor with stored parameter information based on PI substrate |
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