CN221320071U - Magnetron sputtering device and system - Google Patents
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- CN221320071U CN221320071U CN202323254302.5U CN202323254302U CN221320071U CN 221320071 U CN221320071 U CN 221320071U CN 202323254302 U CN202323254302 U CN 202323254302U CN 221320071 U CN221320071 U CN 221320071U
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 56
- 239000013077 target material Substances 0.000 claims abstract description 25
- 230000006698 induction Effects 0.000 claims abstract description 22
- 238000000576 coating method Methods 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000004907 flux Effects 0.000 description 5
- -1 argon ions Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
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- 230000003313 weakening effect Effects 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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Abstract
The utility model provides a magnetron sputtering device and a magnetron sputtering system, and relates to the field of magnetron sputtering coating; the magnetron sputtering device comprises a target, a cathode polar plate, a magnet unit and a demagnetizing unit; the cathode polar plate is arranged between the target and the magnet unit, and a preset gap exists between the cathode polar plate and the target; the demagnetizing unit is arranged between the target and the magnet unit, and the projection of the magnet unit on the target is positioned in the projection area of the demagnetizing unit on the target; wherein, the thickness of the demagnetizing unit is consistent with the distribution trend of the magnetic induction intensity of the target material consumption area; according to the utility model, the demagnetizing unit with the thickness consistent with the magnetic induction intensity distribution trend of the target consumption area is arranged on the magnetron sputtering device to adjust the magnetic field intensity, so that the influence of the target surface consumption is improved, and the film forming uniformity at the end of the target is improved.
Description
Technical Field
The utility model relates to the field of magnetron sputtering coating, in particular to a magnetron sputtering device and a magnetron sputtering system.
Background
In the prior art, due to the effect of a magnet in the magnetron sputtering coating process, the larger the collision probability between Plasma and target atoms in the region with larger magnetic field intensity is, the faster the sputtering rate is, so that the target material in the region is consumed relatively faster, the later use of the target material is caused, the surface of the target material is in a concave-convex shape, and the distance between the surface of the target material at the position of the concave part and the surface of the wafer at the position of the convex part is different, thereby affecting the uniformity of film formation.
Disclosure of utility model
The utility model aims to provide a magnetron sputtering device and a magnetron sputtering system, which can adjust the magnetic field intensity, thereby improving the influence of target surface consumption and improving the film forming uniformity at the final stage of a target.
The utility model provides a magnetron sputtering device and a magnetron sputtering system:
In a first aspect, a magnetron sputtering apparatus includes a target, a cathode plate, a magnet unit, and a demagnetizing unit; the cathode plate is arranged between the target and the magnet unit, and a preset gap exists between the cathode plate and the target;
The demagnetizing unit is arranged between the target and the magnet unit, and the projection of the magnet unit on the target is positioned in the projection area of the demagnetizing unit on the target;
Wherein, the thickness of the demagnetizing unit is consistent with the magnetic induction intensity distribution trend of the target material consumption area.
Further, at least one groove with different thickness is arranged on the surface of the demagnetizing unit so as to adjust the thickness of the demagnetizing unit.
Further, the groove is formed in a surface of the demagnetizing unit, which is close to the target side.
Further, the recess is provided on a surface of the demagnetizing unit on a side close to the magnet unit.
Further, the grooves are respectively formed on the surface of the demagnetizing unit close to the target side and the surface of the demagnetizing unit close to the magnet unit side.
Further, the width of the groove on the demagnetizing unit is 3mm.
Further, when the shape of the demagnetizing unit is annular, the number of the demagnetizing unit is not one, the demagnetizing unit is arranged on one side of the cathode polar plate, which is close to the target, and the projection of the demagnetizing unit on the target is positioned in the projection area of the cathode polar plate on the target.
Further, when the shape of the demagnetizing unit is square, the demagnetizing unit is arranged on one side of the magnet unit, which is close to the cathode plate, and the projection of the demagnetizing unit on the target is located in the projection area of the cathode plate on the target.
Further, the shape of the demagnetizing unit is consistent with the target shape and/or the magnet unit.
In a second aspect, a magnetron sputtering system comprises a magnetron sputtering device according to any of the first aspects.
The magnetron sputtering device and the magnetron sputtering system provided by the utility model have the beneficial effects that:
The magnetron sputtering device comprises a target, a cathode polar plate, a magnet unit and a demagnetizing unit; the cathode polar plate is arranged between the target and the magnet unit, and a preset gap exists between the cathode polar plate and the target; the demagnetizing unit is arranged between the target and the magnet unit, and the projection of the magnet unit on the target is positioned in the projection area of the demagnetizing unit on the target; wherein, the thickness of the demagnetizing unit is consistent with the distribution trend of the magnetic induction intensity of the target material consumption area; the magnetic field intensity is adjusted by arranging the demagnetizing unit with the thickness consistent with the magnetic induction intensity distribution trend of the target material consumption area on the magnetron sputtering device, so that the influence of the target material surface consumption is improved, and the film forming uniformity at the end stage of the target material is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present utility model and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a magnetron sputtering apparatus according to an embodiment of the utility model.
Fig. 2 is a schematic diagram of a demagnetizing unit according to an embodiment of the present utility model.
FIG. 3 is a schematic diagram of a demagnetizing unit according to an embodiment of the present utility model.
FIG. 4 is a third schematic diagram of a demagnetizing unit according to an embodiment of the present utility model.
Fig. 5 is a schematic diagram of a demagnetizing unit according to an embodiment of the present utility model.
Fig. 6 is a second schematic structural diagram of a magnetron sputtering apparatus according to an embodiment of the utility model.
Fig. 7 is a third schematic structural diagram of a magnetron sputtering apparatus according to an embodiment of the utility model.
Fig. 8 shows the distribution trend of the magnetic field on the surface of the target material according to the embodiment of the present utility model.
Fig. 9 is a diagram of a magnetic field distribution diagram of a target surface according to an embodiment of the present utility model.
Icon: 100-magnetron sputtering device, 101-target, 102-cathode plate, 103-magnet unit, 104-demagnetizing unit and 401-groove.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments of the present utility model. The components of the embodiments of the present utility model generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the utility model, as presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present utility model, it should be understood that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate orientations or positional relationships based on those shown in the drawings, or those conventionally put in place when the inventive product is used, or those conventionally understood by those skilled in the art, merely for convenience in describing the present utility model and simplifying the description, and do not indicate or imply that the apparatus or element to be referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model.
Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
In the description of the present utility model, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.
In the industry, the inventor researches that the manufacturing process of semiconductor wafers mostly adopts a magnetron sputtering process, and mostly purchases finished targets with specified thickness at target manufacturers, the finished targets are directly and parallelly arranged on a cathode of a machine table, and a magnet is arranged on the back of the cathode, so that the surface of the targets is ensured to have parallel human magnetic fields in the sputtering process. However, due to the arrangement of the magnets, the probability of collision of the target with target atoms on the target in the region Plasma with higher magnetic field intensity is higher, and the sputtering speed is higher, so that the target consumption in the region is relatively higher.
It can be appreciated that argon is ionized into electrons and argon ions under the action of an electric field, and the argon ions are accelerated to bombard the sputtering surface (i.e. the surface of the target) of the target under the action of the electric field, so that the target atoms are bombarded, and are deposited on an anode substrate (Wafer) to form a film. Electrons do spiral motion under the action of a magnetic field to continuously bombard argon, more electrons and argon ions are generated, so that the more the magnetic field strength is, the more electrons are bound, the more argon ions are bombarded, the more sputtering target atoms are, and the faster the target is consumed.
Based on the above, after long-term use, the surface of the target material can be in a concave-convex shape, and the distance between the surface of the target material at the position of the concave part and the position of the convex part and the wafer surface is different, so that the uniformity of film formation is affected.
Further, as the surface of the target material is concave-convex after long-term use, the consumption of raw materials at the concave position of the target material is inconsistent with the consumption of raw materials at the convex position, if continuous use can cause target penetration at the concave position, so that the Plasma in the area with larger magnetic field intensity bombards the backboard to cause abnormal process, and the service life of the target material is seriously shortened.
In view of the above problems, the embodiments of the present application provide a magnetron sputtering device 100 and a system, in which the magnetic field strength is adjusted by providing a demagnetizing unit 104 with a thickness consistent with the magnetic induction strength distribution trend of the target consumption area on the magnetron sputtering device 100, so as to improve the influence of the target surface consumption, promote the film forming uniformity at the final stage of the target, prolong the service life of the target, and reduce the cost.
Examples
Referring to fig. 1, in a first aspect, an embodiment of the present utility model provides a magnetron sputtering apparatus 100, including a target 101, a cathode plate 102, a magnet unit 103 and a demagnetizing unit 104; the cathode plate 102 is arranged between the target and the magnet unit 103, and a preset gap exists between the cathode plate and the target;
The demagnetizing unit 104 is arranged between the target and the magnet unit 103, and the projection of the magnet unit 103 on the target is positioned in the projection area of the demagnetizing unit 104 on the target;
wherein the thickness of the demagnetizing unit 104 is consistent with the magnetic induction intensity distribution trend of the target material consumption region.
In one embodiment, a demagnetizing unit 104 with a thickness consistent with the magnetic induction intensity distribution trend of the target consumption area is arranged on the magnetron sputtering device 100 to adjust the magnetic field intensity, so that the influence of the target surface consumption is improved, the film forming uniformity at the final stage of the target is improved, the service life of the target is prolonged, and the cost is reduced.
In this embodiment, the cathode plate 102 is disposed between the target and the magnet unit 103 with a predetermined gap from the target, and in one possible embodiment, the gap between the target and the magnet unit 103 may be 20mm.
Since the magnetic field is composed of the magnet units 103 placed at the center and the edge of the target, the magnetic induction line intensity distribution of the target consumption area can be determined by determining the magnetic field distribution on the target surface, for example, when the magnetic induction line intensity distribution trend is firstly reduced and then increased and then gradually changes, the target surface can show a convex-concave-gentle thickness difference in the continuous use process, and the thickness of the demagnetizing unit 104 can be correspondingly set to be thin-thick-relatively uniform compared with the thickness at the moment so as to adapt to the magnetic induction intensity distribution trend of the target consumption area.
Further, the demagnetizing unit 104 is disposed between the target and the magnet unit 103, and the projection of the magnet unit 103 on the target is located in the projection area of the demagnetizing unit 104 on the target, so that the magnetic field generated by the magnet unit 103 can be adapted to a larger range, the influence on the surface consumption of the target can be improved to the greatest extent, and the film forming uniformity at the end of the target is improved.
In the embodiment of the present application, the length of the demagnetizing unit 104 is not limited, and it is only necessary to ensure that the demagnetizing unit 104 is disposed between the target and the magnet unit 103, and the projection of the magnet unit 103 on the target is located in the projection area of the demagnetizing unit 104 on the target.
Further, the surface of the demagnetizing unit 104 is provided with at least one groove 401 of different thickness to adjust the thickness of the demagnetizing unit 104.
In an embodiment, the thickness of the demagnetizing unit 104 needs to be consistent with the magnetic induction distribution trend of the target material consumption region, and in an embodiment of the present application, at least one groove 401 may be disposed on the surface of the demagnetizing unit 104, where the thickness of each groove 401 is different. It is understood that the thickness of the groove 401 is understood to be the length distance in the vertical direction (direction vertically up or vertically down); when a larger magnetic induction intensity needs to be adapted, the thickness of the demagnetizing unit 104 needs to be larger, and the thickness of the corresponding groove 401 is smaller, so that the demagnetizing intensity of the demagnetizing unit 104 corresponding to the target consumption area is increased.
The material of the magnetic canceling unit 104 is not limited in the present disclosure, for example, the magnetic field strength and direction may be appropriately generated by special materials such as magnetic steel, ferrite or soft magnetic alloy in the prior art, so that the magnetic domains of the target magnetic material are rearranged, thereby eliminating or weakening the residual magnetic field. So long as a material is realized that assists the magnetic material to return to a non-magnetic state, thereby eliminating or reducing the effects of the residual magnetic field.
Further, the thickness adjustment of the demagnetizing unit 104 may be performed on the upper and/or lower surface and/or side surface of the demagnetizing unit 104.
In one possible embodiment, referring to fig. 2, the recess 401 on the demagnetizing unit 104 may be disposed on the surface of the demagnetizing unit 104 near the target side in the embodiment of the present application.
In another possible embodiment, referring to fig. 3, the recess 401 of the demagnetizing unit 104 is disposed on the surface of the demagnetizing unit 104 close to the magnet unit 103.
In another possible embodiment, referring to fig. 4, the grooves 401 on the demagnetizing unit 104 in the embodiment of the present application may be respectively disposed on the surface of the demagnetizing unit 104 near the target side and the surface of the demagnetizing unit 104 near the magnet unit 103 side.
In one possible embodiment, see fig. 5, further the width of the recess 401 in the degaussing unit 104 is 3mm.
In the embodiment of the present application, the width of the groove 401 on the demagnetizing unit 104 can be obtained by the average span between the valleys on the magnetic induction distribution of the target material consumption region.
Referring to fig. 6, further, when the shape of the demagnetizing units 104 is not one and is ring-shaped, the demagnetizing units 104 are disposed on one side of the cathode plate 102 near the target, and the projection of the demagnetizing units 104 on the target is located in the projection area of the cathode plate 102 on the target.
In an embodiment of the present application, the shape of the demagnetizing unit 104 may be adapted to the target shape and/or the magnet unit 103 to improve the applicability of the magnetron sputtering device 100 in an embodiment of the present application.
In an embodiment, the magnet unit 103 and the cathode plate 102 of the magnetron sputtering unit are arranged in the magnetron cathode, and the shape of the demagnetizing unit 104 can be adapted to the shape of the target. In this embodiment, when the target is circular, the demagnetizing units 104 may be annular, which are not one in number and are connected to each other, so as to form a circle consistent with the target shape through a plurality of connected rings, and the width and thickness of the circle may be adjusted according to the actual magnetic induction intensity distribution of the target consumption region. The demagnetizing unit 104 may be disposed on a side of the cathode plate 102 close to the target, and in particular, the demagnetizing unit 104 may directly contact with a side of the cathode plate 102 close to the target.
The projection of the demagnetizing unit 104 on the target is positioned in the projection area of the cathode polar plate 102 on the target, so that the demagnetizing unit 104 is supported by the cathode polar plate 102, the actual magnetic induction intensity distribution of the target consumption area is regulated more stably, the influence of the target surface consumption is improved, the film forming uniformity at the final stage of the target is improved, the service life of the target is prolonged, and the cost is reduced.
Further, a groove 401 is provided on the surface of the demagnetizing unit 104 near the target side.
In this embodiment, when the target shape is circular, the plurality of interconnected loops may form a circle conforming to the target shape, the width and thickness of which may be adjusted according to the actual magnetic induction distribution of the target-consuming area. The demagnetizing unit 104 may be disposed on a side of the cathode plate 102 near the target, and specifically, the thickness adjustment on the demagnetizing unit 104 may be performed by disposing a different number of grooves 401 on a surface of the demagnetizing unit 104 near the target.
In another possible embodiment, the recess 401 may be provided in the surface of the demagnetizing unit 104 on the side close to the magnet unit 103.
In another possible embodiment, the recess 401 may be provided on the surface of the demagnetizing unit 104 on the side close to the magnet unit 103 and on the surface of the demagnetizing unit 104 on the side close to the target.
Referring to fig. 7, further, when the demagnetizing unit 104 is square, the demagnetizing unit 104 is disposed on one side of the magnet unit 103 near the cathode plate 102, and the projection of the demagnetizing unit 104 on the target is located in the projection area of the cathode plate 102 on the target.
In an embodiment, the shape of the demagnetizing unit 104 is adapted to the shape of the magnet unit 103 to improve the applicability of the magnetron sputtering device 100 in the embodiment of the present application.
In this embodiment, when the demagnetizing unit 104 has a square shape, the square demagnetizing unit 104 may be directly fixed to the surface of the magnet unit 103, specifically, rotated together with the magnet unit 103 on the side of the magnet unit 103 near the cathode plate 102, thereby optimizing the arrangement of the magnetron sputtering apparatus 100. Wherein, the projection of the demagnetizing unit 104 on the target is positioned in the projection area of the cathode plate 102 on the target, and the projection of the magnet unit 103 on the target is positioned in the projection area of the demagnetizing unit 104 on the target; thereby securing the demagnetizing range of the demagnetizing unit 104 to the maximum extent.
In the embodiment of the present application, the widths among the magnet unit 103, the target, and the cathode plate 102 are not limited, as long as the projection arrangement is satisfied.
In summary, the embodiment of the present application provides a magnetron sputtering device 100, where the magnetron sputtering device 100 includes a target, a cathode plate 102, a magnet unit 103 and a demagnetizing unit 104; the cathode plate 102 is arranged between the target and the magnet unit 103, and a preset gap exists between the cathode plate and the target; the demagnetizing unit 104 is arranged between the target and the magnet unit 103, and the projection of the magnet unit 103 on the target is positioned in the projection area of the demagnetizing unit 104 on the target; wherein, the thickness of the demagnetizing unit 104 is consistent with the magnetic induction intensity distribution trend of the target material consumption area; the magnetic field intensity is adjusted by arranging the demagnetizing unit 104 with the thickness consistent with the magnetic induction intensity distribution trend of the target consumption area on the magnetron sputtering device 100, so that the influence of the target surface consumption is improved, and the film forming uniformity at the end of the target is improved.
In a second aspect, a magnetron sputtering system comprises a magnetron sputtering device 100 according to any of the first aspects described above.
In the embodiment of the present application, the magnetron sputtering system includes all the technical features and effects of the magnetron sputtering device 100 of any one of the first aspect, that is, the demagnetizing unit 104 with the thickness consistent with the magnetic induction intensity distribution trend of the target consumption area is arranged on the magnetron sputtering device 100 to adjust the magnetic field intensity, so as to improve the influence of the target surface consumption and improve the film forming uniformity at the end of the target.
In an embodiment of the present application, there is also provided a method for calibrating magnetic field intensity in a magnetron sputtering apparatus 100, including the steps of: the magnetic fluxes on the target unit and the magnet unit 103 are calculated, respectively, and can be understood as sputtering target, yoke, permanent magnet, magnetic pole, and the like.
Specifically, the B-H curve and coercive force Hc of the magnetic material are used as parameters, and finite element analysis software Ansys is used for counting the two-dimensional magnetic field distribution condition of the magnetron sputtering target.
The calculation formula for the magnetic flux density of the magnet unit 103 is: b=μ 0 (h+m), where B is the magnetic flux density, H is the magnetic field strength, M is the magnetization (which can be determined by the B-H curve and coercivity Hc of the permanent magnet), μ 0 is the permeability in vacuum, where for the yoke and pole piece it can be approximated as: b=μ 0 H.
And because of the permanent magnet area: has the following componentsAnd whereinIs the magnetization current density, jm=0 in the other regions.
Then the definition of the magnetic vector a can be based on: the method can obtain the following steps:
Then, since the structure of the sputtering target is symmetrical along the z-axis, the above formula can be simplified to solve for the two-dimensional magnetic vector potential a in the cylindrical coordinate system.
Since the permanent magnet is required to be uniformly magnetized in the Z direction, only the angular component JM θ is present at JM, namely:
According to the above-described partial equation, the two-dimensional magnetic vector potential a i(Ai at each node on the grid cell can be solved by simultaneous equations, which is represented as the two-dimensional magnetic vector potential at the i-th node. Then according to the calculation formula B = The radial component of the magnetic field B can be derived separately.
Based on the calculation mode, the embodiment of the application can obtain the distribution trend of the magnetic field on the surface of the target and the distribution map of the magnetic field on the surface of the target shown in fig. 8 and 9.
As can be seen from fig. 8, the distribution trend of the magnetic field on the target surface is: firstly, lowering and then lifting, then, gradually flattening, lowering and then lifting, and changing the distribution; and the average span between the valleys is about 3mm; the magnetic induction is smaller the farther the target surface is from the magnet end. Therefore, the width of the demagnetizing unit 104 in the embodiment of the present application may be set to 3mm.
As can be seen from FIG. 9, the magnetic flux density distribution is relatively uniform in the 3 parts of 0 to 10mm, 25 to 55mm and 70 to 80mm, the magnetic flux density is between 80 and 130mT, and the three parts are 62.5% of the total diameter. Under the influence of the consumption change of the target material, the embodiment of the application can correspond to the target material with the thickness of 5-6 mm, and the magnetic energy density of the surface of the target material can be adjusted to be about 7w/103J.m -3 at minimum. Therefore, by adding the demagnetizing unit 104, the magnetic energy density in 80mm along the radial direction is ensured to be regulated to a lower value (for example, 7-8 w/103J.m < -3 >) so as to obviously reduce the rapid consumption of different areas of the target 101, avoid target penetration and improve the overall utilization rate.
The above description is only of the preferred embodiments of the present utility model and is not intended to limit the present utility model, but various modifications and variations can be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.
Claims (10)
1. The magnetron sputtering device is characterized by comprising a target, a cathode polar plate, a magnet unit and a demagnetizing unit; the cathode plate is arranged between the target and the magnet unit, and a preset gap exists between the cathode plate and the target;
The demagnetizing unit is arranged between the target and the magnet unit, and the projection of the magnet unit on the target is positioned in the projection area of the demagnetizing unit on the target;
Wherein, the thickness of the demagnetizing unit is consistent with the magnetic induction intensity distribution trend of the target material consumption area.
2. Magnetron sputtering apparatus according to claim 1, wherein the demagnetizing unit surface is provided with at least one recess of different thickness to adjust the thickness of the demagnetizing unit.
3. Magnetron sputtering apparatus according to claim 2, wherein the recess is provided on a surface of the demagnetizing unit close to the target side.
4. The magnetron sputtering apparatus according to claim 2, wherein the recess is provided on a surface of the demagnetizing unit on a side close to the magnet unit.
5. Magnetron sputtering apparatus according to claim 2, wherein the grooves are provided on a surface of the demagnetizing unit on the side close to the target material, and a surface of the demagnetizing unit on the side close to the magnet unit, respectively.
6. Magnetron sputtering apparatus according to claim 1 wherein the width of the recess in the degaussing unit is 3mm.
7. The magnetron sputtering apparatus according to claim 1, wherein when the shape of the demagnetizing unit is a ring shape which is not one in number and is connected to each other, the demagnetizing unit is provided on a side of the cathode plate close to the target, and a projection of the demagnetizing unit on the target is located in a projection area of the cathode plate on the target.
8. The magnetron sputtering apparatus according to claim 1, wherein when the shape of the demagnetizing unit is square, the demagnetizing unit is disposed on a side of the magnet unit close to the cathode plate, and the projection of the demagnetizing unit on the target is located in a projection region of the cathode plate on the target.
9. Magnetron sputtering device according to claim 1, characterized in that the shape of the demagnetizing unit corresponds to the target shape and/or the magnet unit.
10. A magnetron sputtering system comprising a magnetron sputtering apparatus as claimed in any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323254302.5U CN221320071U (en) | 2023-11-29 | 2023-11-29 | Magnetron sputtering device and system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323254302.5U CN221320071U (en) | 2023-11-29 | 2023-11-29 | Magnetron sputtering device and system |
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| CN221320071U true CN221320071U (en) | 2024-07-12 |
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| CN202323254302.5U Active CN221320071U (en) | 2023-11-29 | 2023-11-29 | Magnetron sputtering device and system |
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