CN221199770U - Single power supply circuit for bridge type power module reverse bias test - Google Patents
Single power supply circuit for bridge type power module reverse bias test Download PDFInfo
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- CN221199770U CN221199770U CN202320450110.2U CN202320450110U CN221199770U CN 221199770 U CN221199770 U CN 221199770U CN 202320450110 U CN202320450110 U CN 202320450110U CN 221199770 U CN221199770 U CN 221199770U
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- 238000012360 testing method Methods 0.000 title claims abstract description 27
- 239000003990 capacitor Substances 0.000 claims description 23
- 238000005259 measurement Methods 0.000 abstract description 2
- 230000032683 aging Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The utility model discloses a single power supply circuit for bridge type power module reverse bias test, which comprises: a high voltage power supply, a negative high voltage generating circuit and a switching device; the high-voltage power supply applies reverse bias voltage to the upper bridge arm power module, the switching device works at a set frequency and a duty ratio of 50%, and the negative high-voltage generating circuit generates stable negative pressure to apply reverse bias voltage to the lower bridge arm power module. The high-voltage power supply is adopted to realize the reverse bias of the upper bridge arm and the lower bridge arm, so that the cost is greatly saved compared with a double-high-voltage power supply scheme; and the bias voltage measurement is carried out while the upper bridge arm power device and the lower bridge arm power device are realized, so that the test time is saved.
Description
Technical Field
The utility model belongs to the technical field of test circuits, and particularly relates to a single power supply circuit for a bridge type power module reverse bias test.
Background
A plurality of power devices such as metal-oxide semiconductor field effect transistor MOSFET, power diode, and insulated gate bipolar transistor IGBT (Insulated Gate Bipolar Transistor) are packaged in a module to become a power module. Of these, the bridge type is most common. Such as a half-bridge module with two units of power devices forming an upper bridge and a lower bridge, a full-bridge module with four units of power devices forming a full-bridge module, a three-phase full-bridge module with six units of power devices forming the full-bridge module, and the like. For quality control, an aging test is performed for a certain period of time before shipment. Wherein the reverse bias test under certain temperature and humidity conditions is the most dominant aging test. The reverse bias test is to apply a certain voltage under the cut-off state of each power device, detect the state of the power device by detecting the leakage current of the corresponding power device, and if the leakage current exceeds the limit, consider the device to fail and reject the failed device. In the existing scheme of simultaneous aging of the upper bridge and the lower bridge, two high-voltage power supplies are generally adopted, one high-voltage power supply is used for the reverse bias test of the upper bridge arm, the other high-voltage power supply is used for the reverse bias test of the lower bridge arm, and the cost of the test equipment is greatly increased by the scheme of the reverse bias test of the two high-voltage power supplies.
Disclosure of utility model
The utility model provides a single power supply circuit for a bridge type power module reverse bias test, which can realize the reverse bias test of an upper bridge arm and a lower bridge arm through a high-voltage power supply.
The utility model is realized in that a single power supply circuit for bridge power module reverse bias testing, the circuit comprises: a high voltage power supply, a negative high voltage generating circuit and a switching device;
The high-voltage power supply applies reverse bias voltage to the upper bridge arm power module, the switching device works at a set frequency and a duty ratio of 50%, and the negative high-voltage generating circuit generates stable negative pressure to apply reverse bias voltage to the lower bridge arm power module.
Further, the high-voltage power supply is connected with the upper bridge arm power module in parallel.
Further, the negative high voltage generating circuit includes: the resistor, the first capacitor, the first diode, the second diode and the second capacitor;
The positive electrode of the first diode is connected with the negative electrode of the high-voltage power supply and the upper bridge arm power module, the positive electrode of the first diode is connected with the lower bridge arm power module, the first capacitor is connected with the negative electrode of the high-voltage power supply, and the first capacitor is connected with the lower bridge arm power module in parallel; the switching device is connected in parallel with the resistor and the first diode.
Further, the switching device is a triode or an IGBT.
Further, the collector of the switching device is connected with the resistor, the emitter is connected with the cathode of the first diode, and the resistor is grounded.
The single power supply circuit for the bridge type power module reverse bias test has the following beneficial effects:
(1) The high-voltage power supply is adopted to realize the reverse bias of the upper bridge arm and the lower bridge arm, so that the cost is greatly saved compared with a double-high-voltage power supply scheme;
(2) And the bias voltage measurement is carried out while the upper bridge arm power device and the lower bridge arm power device are realized, so that the test time is saved.
Drawings
Fig. 1 is a schematic diagram of a single power circuit structure for a bridge power module reverse bias test according to an embodiment of the present utility model;
fig. 2 is a working waveform diagram of a negative voltage generating circuit according to an embodiment of the present utility model;
1. a half-bridge power module; 1a, an upper bridge arm power device; 1b, a lower bridge arm power device; 2. a high voltage power supply; 3. a first capacitor; 4. a resistor; 5. a switching device; 6. a first diode; 7. a second capacitor; 8. and a second diode.
Detailed Description
The following detailed description of the embodiments of the utility model, given by way of example only, is presented in the accompanying drawings to aid in a more complete, accurate, and thorough understanding of the inventive concepts and aspects of the utility model by those skilled in the art.
Fig. 1 is a schematic diagram of a single power circuit for a bridge power module reverse bias test according to an embodiment of the present utility model, and for convenience of explanation, only the portions related to the present utility model are shown.
The circuit comprises: a high voltage power supply 2, a negative high voltage generating circuit and a switching device 5;
The high-voltage power supply 2 applies a reverse bias voltage to the upper bridge arm power module 1a, the switching device 5 works at a set frequency and a duty ratio of 50%, and the negative high-voltage generating circuit generates stable negative pressure to apply the reverse bias voltage to the lower bridge arm power module 1 b.
In the embodiment of the utility model, the high-voltage power supply 2 is connected in parallel with the upper arm power module 1 a.
At this time, the negative high voltage generating circuit includes:
A resistor 4, a first capacitor 3, a first diode 6, a second diode 8 and a second capacitor 7;
The positive electrodes of the upper bridge arm power module 1a and the high-voltage power supply 2 are connected with a second capacitor 7 through a resistor 4, the second capacitor 7 is connected with the anode of a first diode 6, the cathode of a second diode 8 is connected, the cathode of the first diode 6 is connected with the negative electrode of the high-voltage power supply and the upper bridge arm power module, the anode of the second diode 8 is connected with a first capacitor 3 and a lower bridge arm power module 1b, the first capacitor 3 is connected with the negative electrode of the high-voltage power supply 2, and the first capacitor 3 is connected with the lower bridge arm power module 1b in parallel; the switching device 5 is connected in parallel with the resistor 4 and the first diode 6.
In the embodiment of the present utility model, the switching device 5 is a triode, an IGBT or a MOSFET.
The collector of the switching device 5 is connected to the resistor 4, the emitter is connected to the cathode of the first diode 6, and to ground.
The reverse bias test principle of the upper bridge arm and the lower bridge arm under the single power supply circuit is as follows:
The switching device 5 is controlled to be turned off, the high-voltage power supply 2 applies reverse bias voltage to the upper bridge arm power module 1a, meanwhile, the resistor 4 and the first diode 6 charge the second capacitor 7, the voltage of the second capacitor 7 is charged to the voltage V1 of the high-voltage power supply 2, and the voltage V1 is the test reverse bias voltage of the upper bridge arm power module and the lower bridge arm power module. The switching device 5 is controlled to be turned on, the voltage at the point a is approximately 0, the voltage on the second capacitor 7 is kept unchanged, the voltage at the point B is-V1, and the first capacitor 3 is charged through the second diode 8, regardless of the conduction voltage drop of the switching device 5. Irrespective of the conduction voltage drop of the second diode 8, the voltage at the point B is-V1, and the voltage across the first capacitor 3 is V1, so that the leakage current of the power module 1 is generally relatively small, and the reverse bias voltage V1 is applied to the lower bridge arm power module 1B through the first capacitor 3, and the operation waveform is shown in fig. 2.
While the present utility model has been described by way of example, it should be apparent that the practice of the utility model is not limited by the foregoing, but rather is intended to cover various insubstantial modifications of the method concepts and teachings of the utility model, either as applied to other applications without modification, or as applied directly to other applications, without departing from the scope of the utility model.
Claims (4)
1. A single power supply circuit for bridge power module reverse bias testing, the circuit comprising: a high voltage power supply, a negative high voltage generating circuit and a switching device;
the high-voltage power supply applies reverse bias voltage to the upper bridge arm power module, the switching device works at a set frequency and a duty ratio of 50%, and the negative high-voltage generating circuit generates stable negative pressure to apply reverse bias voltage to the lower bridge arm power module;
the high-voltage power supply is connected with the upper bridge arm power module in parallel;
The negative high voltage generation circuit includes: the resistor, the first capacitor, the first diode, the second diode and the second capacitor;
The positive pole of the first diode is connected with the negative pole of the high-voltage power supply and the upper bridge arm power module, the positive pole of the second diode is connected with the lower bridge arm power module, the first capacitor is connected with the negative pole of the high-voltage power supply, and the first capacitor is connected with the lower bridge arm power module in parallel; the switching device is connected in parallel with the resistor and the first diode.
2. The single power circuit for bridge power module reverse bias testing according to claim 1, wherein the switching device is a transistor or an IGBT.
3. The single power circuit for bridge power module reverse bias test according to claim 2, wherein the collector of the switching device is connected to a resistor, the emitter is connected to the cathode of the first diode, and grounded.
4. A single power circuit for bridge power module reverse bias testing according to claim 3, wherein the switching device is a MOSFET.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320450110.2U CN221199770U (en) | 2023-03-10 | 2023-03-10 | Single power supply circuit for bridge type power module reverse bias test |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320450110.2U CN221199770U (en) | 2023-03-10 | 2023-03-10 | Single power supply circuit for bridge type power module reverse bias test |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN221199770U true CN221199770U (en) | 2024-06-21 |
Family
ID=91492006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320450110.2U Active CN221199770U (en) | 2023-03-10 | 2023-03-10 | Single power supply circuit for bridge type power module reverse bias test |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN221199770U (en) |
-
2023
- 2023-03-10 CN CN202320450110.2U patent/CN221199770U/en active Active
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