CN221125812U - Relay driving circuit and device thereof - Google Patents
Relay driving circuit and device thereof Download PDFInfo
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- CN221125812U CN221125812U CN202322847070.8U CN202322847070U CN221125812U CN 221125812 U CN221125812 U CN 221125812U CN 202322847070 U CN202322847070 U CN 202322847070U CN 221125812 U CN221125812 U CN 221125812U
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Abstract
The embodiment of the utility model discloses a relay driving circuit and a device thereof, wherein the circuit comprises: an output power supply for supplying a driving voltage; the high-side driving module and the low-side driving module are used for realizing overcurrent protection, the positive electrode of the output power supply is connected to the voltage input end of the high-side driving module, and the current output end of the high-side driving module is connected to the positive electrode of the coil of the relay; the negative electrode of the coil of the relay is connected to the current input end of the low-side driving module, and the current output end of the low-side driving module is connected to the negative electrode of the output power supply; the control module is used for controlling the switching states of the high-side driving module and the low-side driving module; the high-side feedback module is used for feeding back the switching state of the high-side driving module; and the low-side feedback module is used for feeding back the switching state of the low-side driving module. By the mode, the relay driving coil fault protection circuit can avoid the influence on the system function caused by the relay driving coil fault, and can still realize effective disconnection of the relay when the driving coil single-point faults.
Description
Technical Field
The embodiment of the utility model relates to the field of new energy storage battery systems, in particular to a relay driving circuit and a device thereof.
Background
The charge and discharge control in the storage battery system mainly adopts an MOS tube or a high-power relay, and the main method for driving the high-power relay comprises the MOS tube, the relay and a special high-low side driving chip. In the prior art, the MOS tube and the relay driver have no feedback and circuit protection functions, and the professional high-low side driving chip has short circuit, overcurrent protection and state feedback functions, but the professional high-low side driving chip is mainly manufactured by foreign factories, including Infraxings, enzhima and Italian semiconductors, so that the hardware cost is higher.
In addition, the failure of the relay driving coil may cause an excessively small internal resistance of the coil, which may cause an excessively large driving current of the BMS to cause damage of the BMS, and the driving coil is driven by a Battery Management System (BMS). The relay driving coil voltage is too large, which results in the relay driving coil current being too large, resulting in the BMS damage. The relay driving circuit is failed, so that the relay cannot be disconnected, a storage battery system cannot be disconnected from a charging and discharging loop, and the storage battery is damaged.
Disclosure of utility model
The embodiment of the utility model mainly solves the technical problem of providing a relay driving circuit and a device thereof, which can realize high-low side double-sided driving, overcurrent protection and short-circuit protection of the relay driving circuit by using components with lower cost.
In order to solve the technical problems, the utility model adopts a technical scheme that: there is provided a relay driving circuit including: an output power supply for supplying a driving voltage; the high-side driving module and the low-side driving module are used for driving the relay and realizing overcurrent protection, the positive electrode of the output power supply is connected to the voltage input end of the high-side driving module, and the current output end of the high-side driving module is connected to the positive electrode of the driving coil of the relay; the negative electrode of the driving coil of the relay is connected to the current input end of the low-side driving module, and the current output end of the low-side driving module is connected to the negative electrode of the output power supply; the control module is used for controlling the switching states of the high-side driving module and the low-side driving module, a first output end of the control module is connected to a signal input end of the high-side driving module, and a second output end of the control module is connected to a signal input end of the low-side driving module; the high-side feedback module is used for feeding back the switching state of the high-side driving module, the input end of the high-side feedback module is connected to the current output end of the high-side driving module, and the output end of the high-side feedback module is connected to the first input end of the control module; the low-side feedback module is used for feeding back the switching state of the low-side driving module, the input end of the low-side feedback module is connected to the current input end of the low-side driving module, and the output end of the low-side feedback module is connected to the second input end of the control module.
In some embodiments, the high-side driving module includes a MOS transistor Q11, a current detection resistor R19, a backflow prevention diode D8, a driving transistor Q9, a driving transistor Q10, a driving resistor R20, a driving resistor R21, a driving resistor R22, a driving resistor R23, a driving resistor R24, a driving resistor R25, a driving resistor R26, a zener diode D7, and a delay capacitor C20, wherein a positive electrode of the output power supply is connected to a first terminal of the current detection resistor R19, a collector of the driving transistor Q8, a cathode of the zener diode D7, and a first terminal of the driving resistor R21, a second terminal of the current detection resistor R19 is connected to a first terminal of the driving resistor R20, and a drain of the MOS transistor Q11, a second terminal of the driving resistor R20 is connected to a base of the driving transistor Q8 and a drain of the driving transistor Q9, a base of the driving transistor Q9 is connected to a first terminal of the driving resistor R23 and a first terminal of the delay capacitor C20, and a second terminal of the driving transistor R25 is connected to a second terminal of the driving transistor Q25, and a second terminal of the delay capacitor R20 is connected to a second terminal of the driving transistor R25; the second end of the driving resistor R22 is connected to the collector of the driving triode Q10, the base of the driving triode Q10 is connected to the first end of the driving resistor R24 and the first end of the driving resistor R26, the second end of the driving resistor R24 is connected to the first output end of the control module, and the second end of the driving resistor R26 and the emitter of the driving triode Q10 are grounded; the source electrode of the MOS tube Q11 is connected to the anode of the anti-backflow diode D8 and the input end of the high-side feedback module, and the cathode of the anti-backflow diode D8 is connected to the anode of the driving coil.
In some embodiments, the high-side feedback module includes a resistor R27, a resistor R28, a resistor R29, a resistor R30, a transistor Q12, and a bidirectional transient suppression diode D9, wherein a first end of the bidirectional transient suppression diode D9 is connected to the current output of the high-side drive module and the first end of the resistor R28, a second end of the resistor R28 is connected to the first end of the resistor R30 and the base of the transistor Q12, and a second end of the bidirectional transient suppression diode D9, a second end of the resistor R28, and an emitter of the transistor Q12 are grounded; the collector of the triode Q12 is connected to the first end of the resistor R27 and the first end of the resistor R29, the second end of the resistor R27 is connected to a first voltage source, and the second end of the resistor R29 is connected to the first input end of the control module.
In some embodiments, the low-side driving module includes a MOS transistor Q14, a current detection resistor R50, a driving triode Q16, a driving triode Q18, a driving optocoupler P3, a driving resistor R49, a driving resistor R44, a driving resistor R42, a driving resistor R47, a driving resistor R40, a driving resistor R38, a zener diode D13, and a delay capacitor C22, wherein a drain electrode of the MOS transistor Q14 is connected to an input end of the low-side feedback module and a negative electrode of the driving coil, a gate electrode of the MOS transistor Q14 is connected to an emitter electrode of the driving triode Q16, a first end of the delay capacitor C22, a first end of the driving resistor R42, a cathode of the zener diode D13, a triode emitter of the driving optocoupler P3, and a source electrode of the MOS transistor Q14 is connected to a first end of the driving resistor R49 and a first end of the current detection resistor R50, and a second end of the current detection resistor R50 is grounded; the base electrode of the driving triode Q16 is connected to the second end of the delay capacitor C22 and the first end of the driving resistor R44, the collector electrode of the driving triode Q16 is connected to the second end of the driving resistor R49 and the base electrode of the driving triode Q18, the collector electrode of the driving triode Q18 is connected to the second end of the driving resistor R44 and the second end of the driving resistor R42, and the emitter electrode of the driving triode Q18, the anode electrode of the zener diode D13 and the second end of the driving resistor R47 are grounded; the triode collector of the driving optocoupler P3 is connected to the first end of the driving resistor R40, the second end of the driving resistor R40 is connected to the positive electrode of the output power supply, the diode anode of the driving optocoupler P3 is connected to the first end of the driving resistor R38, the second end of the driving resistor R38 is connected to a first voltage source, and the diode cathode of the driving optocoupler P3 is connected to the second output end of the control module.
In some embodiments, the low-side feedback module includes a resistor R32, a resistor R34, a resistor R36, a driving optocoupler P2, and a bidirectional transient suppression diode D11, wherein a first end of the bidirectional transient suppression diode D11 is connected to the positive pole of the output power supply and the first end of the resistor R32, a second end of the resistor R32 is connected to the first end of the resistor R34 and the diode anode of the driving optocoupler P2, and a diode cathode of the driving optocoupler P2 is connected to the second end of the resistor R34, the second end of the bidirectional transient suppression diode D11 is connected to the output end of the low-side driving module; the triode collector of the driving optocoupler P2 is connected to a first voltage source, the triode emitter of the driving optocoupler P2 is connected to the first end of the resistor R36 and the second input end of the control module, and the second end of the resistor R36 is grounded.
In some embodiments, the control module includes a microcontroller circuit.
In some embodiments, the output power source is a BMS control power source.
In some embodiments, the output voltage of the first voltage source is 3.3V.
In some embodiments, the output voltage of the output power supply is 24V.
In order to solve the technical problems, the utility model adopts another technical scheme that: provided is a relay driving device including: the relay driving circuit as described above.
The embodiment of the utility model has the beneficial effects that: compared with the prior art, the utility model can avoid the influence of the faults of the driving coil of the relay on the system function, and can still realize the effective disconnection of the relay when the single point of the driving coil breaks down.
Drawings
Fig. 1 is a schematic structural diagram of a relay driving circuit according to an embodiment of the present utility model;
FIG. 2 is a circuit topology diagram of a high-side driving module and a high-side feedback module according to an embodiment of the present utility model;
Fig. 3 is a circuit topology diagram of a low-side driving module and a low-side feedback module according to an embodiment of the present utility model.
Detailed Description
In order that the utility model may be readily understood, a more particular description thereof will be rendered by reference to specific embodiments that are illustrated in the appended drawings. It will be understood that when an element is referred to as being "fixed" to another element, it can be directly on the other element or one or more intervening elements may be present therebetween. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or one or more intervening elements may be present therebetween. The terms "vertical," "horizontal," "left," "right," and the like are used herein for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. The terminology used in the description of the utility model herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. The term "and/or" as used in this specification includes any and all combinations of one or more of the associated listed items.
In some embodiments of the present application, there is provided a relay driving circuit, a schematic structure of which is shown in fig. 1, the relay driving circuit including: the power supply device comprises an output power supply 100, a control module 200, a high-side driving module 300, a low-side driving module 400, a high-side feedback module 500 and a low-side feedback module 600.
Wherein, the positive pole of the output power supply 100 is connected to the voltage input end of the high-side driving module 300, and the current output end of the high-side driving module 300 is connected to the positive pole of the driving coil 20 of the relay; the negative pole of the driving coil 20 of the relay is connected to the current input end of the low-side driving module 400, and the current output end of the low-side driving module 400 is connected to the negative pole of the output power supply 100; a first output end of the control module 200 is connected to a signal input end of the high-side driving module 300, and a second output end of the control module 200 is connected to a signal input end of the low-side driving module 400; the input end of the high-side feedback module 500 is connected to the current output end of the high-side driving module 300, and the output end of the high-side feedback module 500 is connected to the first input end of the control module 200; an input of the low side feedback module 600 is connected to a current input of the low side driving module 400, and an output of the low side feedback module 600 is connected to a second input of the control module 200.
The output power supply 100 is used for providing a driving voltage, and in the embodiment of the present application, the output power supply 100 is a BATTERY management system (BATTERY MANAGEMENT SYSTEM, BMS) control power supply that outputs 24V dc.
In the embodiment of the present application, the control module 200 is used for controlling the switching states of the high-side driving module 300 and the low-side driving module 400, that is, controlling the high-side driving module 300 and the low-side driving module 400 to be turned on or off, and the control module 200 includes a microcontroller circuit.
The high-side driving module 300 and the low-side driving module 400 are used for driving the relay and realizing overcurrent protection; the high-side feedback module 500 is used for feeding back the switching state of the high-side driving module 300; the low side feedback module 600 is used for feeding back the switching state of the low side driving module 400.
Specifically, the output power 100 is output to the high-side driving module 300, the high-side driving module 300 is output to the positive electrode of the driving coil 20, the negative electrode of the driving coil 20 is output to the low-side driving module 400, and the low-side driving module 400 flows back to the negative electrode of the output power 100. The control module 200 controls the high-side driving module 300 to be turned on or off, and when the high-side driving module 300 is over-current, the MOS is automatically controlled to be turned off, and the output is stopped and the self-locking is performed. The high-side feedback module 500 detects the state of the high-side driving module 300 and feeds back to the control module 200.
The control module 200 controls the on/off of the low-side driving module 400, and when the low-side driving module 400 is over-current, the control module automatically controls the MOS to be off, stops outputting and self-locks. The low side feedback module 600 detects the state of the low side driving module 400 and feeds back to the control module 200.
When the high-side driving module 300 fails, the low-side driving module 400 can also independently drive the relay to be disconnected, when the low-side driving module 400 fails, the high-side driving module 300 can also independently drive the relay to be disconnected, and the relay can be disconnected after the single-point failure is realized.
In the embodiment of the present application, a high-side driving module and a high-side feedback module are provided, and the circuit topology diagram of the high-side driving module is shown in fig. 2, where the high-side driving module 300 includes a MOS transistor Q11, a current detection resistor R19, a backflow preventing diode D8, a driving transistor Q9, a driving transistor Q10, a driving resistor R20, a driving resistor R21, a driving resistor R22, a driving resistor R23, a driving resistor R24, a driving resistor R25, a driving resistor R26, a zener diode D7, and a delay capacitor C20.
The positive electrode of the output power supply (i.e., V24V shown in fig. 2) is connected to the first end of the current detection resistor R19, the collector of the driving transistor Q8, the cathode of the zener diode D7, and the first end of the driving resistor R21, the second end of the current detection resistor R19 is connected to the first end of the driving resistor R20 and the drain of the MOS transistor Q11, the second end of the driving resistor R20 is connected to the base of the driving transistor Q8 and the collector of the driving transistor Q9, the base of the driving transistor Q9 is connected to the first end of the driving resistor R23 and the first end of the delay capacitor C20, the emitter of the driving transistor Q9 is connected to the gate of the MOS transistor Q11, the second end of the delay capacitor C20, the second end of the driving resistor R25, the anode of the zener diode D7, the second end of the driving resistor R21, and the first end of the driving resistor R22.
The second end of the driving resistor R22 is connected to the collector of the driving transistor Q10, the base of the driving transistor Q10 is connected to the first end of the driving resistor R24 and the first end of the driving resistor R26, the second end of the driving resistor R24 is connected to the first output end of the control module (i.e., hsd.ctrl shown in fig. 2), and the second end of the driving resistor R26 and the emitter of the driving transistor Q10 are grounded.
The source of MOS transistor Q11 is connected to the anode of anti-reverse diode D8 and the input of high-side feedback module 500 (i.e., the first end of bidirectional transient suppression diode D9 shown in FIG. 2), and the cathode of anti-reverse diode D8 is connected to the anode of the drive coil (i.e., HSD. OUT shown in FIG. 2).
Specifically, the first output end (hsd.ctrl) of the control module outputs a signal to drive the transistor Q10 to be turned on, the driving resistor R21 and the driving resistor R22 form a voltage division, the voltage between the gate and the source of the MOS transistor Q11 reaches the turn-on voltage, and the MOS transistor Q11 turns on the output current. The current flows through the current detection resistor R19 to generate voltage, the voltage is connected with the base electrode of the driving triode Q8 through the driving resistor R20, the voltage is increased after the current of the current detection resistor R19 is increased, the driving triode Q8 is conducted after the voltage of the current detection resistor R19 is increased to about 0.7V, the collector electrode of the driving triode Q8 is connected with the driving resistor R23, the driving triode Q9 is conducted, the driving triode Q8 and the driving triode Q9 are conducted to form a parallel connection with the resistor R21, the voltage between the grid electrode and the source electrode of the MOS tube Q11 is lower than the starting voltage, the MOS tube Q11 is cut off, the output current is stopped, and the overcurrent protection is realized.
In an embodiment of the present application, the high-side feedback module 500 includes a resistor R27, a resistor R28, a resistor R29, a resistor R30, a transistor Q12, and a bidirectional transient suppression diode D9.
The first end of the bidirectional transient suppression diode D9 is connected to the current output end of the high-side driving module 300 (i.e., the source of the MOS transistor Q11 shown in fig. 2) and the first end of the resistor R28, the second end of the resistor R28 is connected to the first end of the resistor R30 and the base of the triode Q12, and the second end of the bidirectional transient suppression diode D9, the second end of the resistor R28 and the emitter of the triode Q12 are grounded;
The collector of transistor Q12 is connected to a first terminal of resistor R27 and a first terminal of resistor R29, a second terminal of resistor R27 is connected to a first voltage source (i.e., VDD3V3 shown in fig. 2), and a second terminal of resistor R29 is connected to a first input terminal of the control module (i.e., hsd.fb shown in fig. 2).
Specifically, when the MOS transistor Q11 is turned on, the voltage of the MOS transistor Q11 is input to the resistor R28, the resistor R28 drives the transistor Q12 to be turned on, the collector electrode of the transistor Q12 is at a low level, and the voltage is fed back to the first input end (hsd.fb) of the control module through the resistor R29, so as to realize the state feedback of the high-side driving module 300.
In the embodiment of the application, the output voltage of the first voltage source is 3.3V.
In the embodiment of the application, a low-side driving module and a low-side feedback module are provided, and a circuit topology diagram of the low-side driving module is shown in fig. 3, wherein the low-side driving module comprises a MOS transistor Q14, a current detection resistor R50, a driving triode Q16, a driving triode Q18, a driving optocoupler P3, a driving resistor R49, a driving resistor R44, a driving resistor R42, a driving resistor R47, a driving resistor R40, a driving resistor R38, a zener diode D13 and a delay capacitor C22.
The drain electrode of the MOS transistor Q14 is connected to the input end of the low-side feedback module (i.e., the second end of the bidirectional transient suppression diode D11 shown in fig. 3) and the negative electrode of the driving coil (i.e., the lsd.out shown in fig. 3), the gate electrode of the MOS transistor Q14 is connected to the emitter electrode of the driving transistor Q16, the first end of the delay capacitor C22, the first end of the driving resistor R42, the cathode of the zener diode D13, the emitter electrode of the transistor of the driving optocoupler P3, the source electrode of the MOS transistor Q14 is connected to the first end of the driving resistor R49 and the first end of the current detection resistor R50, and the second end of the current detection resistor R50 is grounded, i.e., the second end of the current detection resistor R50 is connected back to the negative electrode of the output power supply.
The base of the driving triode Q16 is connected to the second end of the delay capacitor C22 and the first end of the driving resistor R44, the collector of the driving triode Q16 is connected to the second end of the driving resistor R49 and the base of the driving triode Q18, the collector of the driving triode Q18 is connected to the second end of the driving resistor R44 and the second end of the driving resistor R42, and the emitter of the driving triode Q18, the anode of the zener diode D13 and the second end of the driving resistor R47 are grounded.
The triode collector of the driving optocoupler P3 is connected to the first end of the driving resistor R40, the second end of the driving resistor R40 is connected to the positive electrode of the output power supply (i.e., V24V shown in fig. 3), the diode anode of the driving optocoupler P3 is connected to the first end of the driving resistor R38, the second end of the driving resistor R38 is connected to the first voltage source (i.e., VDD3V3 shown in fig. 3), and the diode cathode of the driving optocoupler P3 is connected to the second output end of the control module (i.e., lsd. Ctrl shown in fig. 3).
Specifically, the second output end (lsd.ctrl) of the control module outputs a signal to drive the triode of the optocoupler P3 to be turned on, the driving resistor R40 and the driving resistor R47 form a voltage division, the voltage between the gate and the source of the MOS transistor Q14 reaches an on voltage, and the MOS transistor Q14 turns on the output current. The current flows through the current detection resistor R50 to generate voltage, the voltage is connected with the base electrode of the driving triode Q18 through the driving resistor R49, the voltage is increased after the current of the current detection resistor R50 is increased, the driving triode Q18 is conducted after the voltage of the current detection resistor R50 is increased to about 0.7V, the collector electrode of the driving triode Q18 is connected with the driving resistor R44, the driving triode Q16 is conducted, the driving triode Q18 and the driving triode Q16 are conducted to form a parallel connection with the resistor R47, the voltage between the grid electrode and the source electrode of the MOS tube Q14 is lower than the starting voltage, the MOS tube Q14 is cut off, the output current is stopped, and the overcurrent protection is realized.
In the embodiment of the application, the low-side feedback module comprises a resistor R32, a resistor R34, a resistor R36, a driving optocoupler P2 and a bidirectional transient suppression diode D11.
The first terminal of the bidirectional transient suppression diode D11 is connected to the positive electrode of the output power supply (i.e., V24V shown in fig. 3) and the first terminal of the resistor R32, the second terminal of the resistor R32 is connected to the first terminal of the resistor R34 and the diode anode of the driving optocoupler P2, the diode cathode of the driving optocoupler P2 is connected to the second terminal of the resistor R34, the second terminal of the bidirectional transient suppression diode D11 is connected to the output terminal of the low-side driving module 400 (i.e., the drain of the MOS transistor Q14 shown in fig. 3).
The triode collector of the driving optocoupler P2 is connected to a first voltage source (i.e., VDD3V3 shown in fig. 3), the triode emitter of the driving optocoupler P2 is connected to a first terminal of a resistor R36 and a second input terminal of the control module (i.e., lsd.ctrl shown in fig. 3), and a second terminal of the resistor R36 is grounded.
Specifically, when the MOS transistor Q14 is turned on, the current passes through the resistor R32, the light emitting diode of the driving optocoupler P2, and the negative electrode (GND) of the output power supply to form a path, the triode of the driving optocoupler P2 is turned on, the emitter of the triode of the driving optocoupler P2 is at a high level, and the high level is fed back to the second input end (lsd.fb) of the control module, so as to realize state feedback of the low-side driving module 400.
In the embodiment of the application, the output voltage of the first voltage source is 3.3V.
Compared with the prior art, the utility model can avoid the fault of the relay driving coil to influence the system function and control the influence spreading; the driving circuit is provided with a high-low side double-layer control mechanism, so that the relay can be effectively disconnected when a single point fails, and a charging and discharging loop of the storage battery system is cut off; finally, the driving circuit adopts the conventional MOS tube, triode, resistor, capacitor and other devices, so that the cost is low, and the driving circuit can be made in China.
Based on the relay driving circuit provided in the above embodiment, an application implementation provides a relay driving device, including the relay driving circuit described in the above embodiment.
It should be noted that while the present utility model has been illustrated in the drawings and described in connection with the preferred embodiments thereof, it is to be understood that the utility model may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, but are to be construed as providing a full breadth of the disclosure. The above-described features are further combined with each other to form various embodiments not listed above, and are considered to be the scope of the present utility model described in the specification; further, modifications and variations of the present utility model may be apparent to those skilled in the art in light of the foregoing teachings, and all such modifications and variations are intended to be included within the scope of this utility model as defined in the appended claims.
Claims (10)
1. A relay driving circuit, comprising:
An output power supply for supplying a driving voltage;
The high-side driving module and the low-side driving module are used for driving the relay and realizing overcurrent protection, the positive electrode of the output power supply is connected to the voltage input end of the high-side driving module, and the current output end of the high-side driving module is connected to the positive electrode of the driving coil of the relay;
the negative electrode of the driving coil of the relay is connected to the current input end of the low-side driving module, and the current output end of the low-side driving module is connected to the negative electrode of the output power supply;
The control module is used for controlling the switching states of the high-side driving module and the low-side driving module, a first output end of the control module is connected to a signal input end of the high-side driving module, and a second output end of the control module is connected to a signal input end of the low-side driving module;
The high-side feedback module is used for feeding back the switching state of the high-side driving module, the input end of the high-side feedback module is connected to the current output end of the high-side driving module, and the output end of the high-side feedback module is connected to the first input end of the control module;
The low-side feedback module is used for feeding back the switching state of the low-side driving module, the input end of the low-side feedback module is connected to the current input end of the low-side driving module, and the output end of the low-side feedback module is connected to the second input end of the control module.
2. The circuit of claim 1, wherein the high-side driver module comprises a MOS transistor Q11, a current detection resistor R19, a backflow preventing diode D8, a driving transistor Q9, a driving transistor Q10, a driving resistor R20, a driving resistor R21, a driving resistor R22, a driving resistor R23, a driving resistor R24, a driving resistor R25, a driving resistor R26, a zener diode D7, and a delay capacitor C20, wherein,
The positive electrode of the output power supply is connected to the first end of the current detection resistor R19, the collector electrode of the driving triode Q8, the cathode of the zener diode D7 and the first end of the driving resistor R21, the second end of the current detection resistor R19 is connected to the first end of the driving resistor R20 and the drain electrode of the MOS transistor Q11, the second end of the driving resistor R20 is connected to the base electrode of the driving triode Q8 and the collector electrode of the driving triode Q9, the base electrode of the driving triode Q9 is connected to the first end of the driving resistor R23 and the first end of the delay capacitor C20, the second end of the driving resistor R23 is connected to the first end of the driving resistor R25, and the emitter electrode of the driving triode Q9 is connected to the gate electrode of the MOS transistor Q11, the second end of the delay capacitor C20, the second end of the driving resistor R25, the anode electrode of the diode D7, the second end of the zener resistor R21 and the first end of the driving resistor R22;
The second end of the driving resistor R22 is connected to the collector of the driving triode Q10, the base of the driving triode Q10 is connected to the first end of the driving resistor R24 and the first end of the driving resistor R26, the second end of the driving resistor R24 is connected to the first output end of the control module, and the second end of the driving resistor R26 and the emitter of the driving triode Q10 are grounded;
the source electrode of the MOS tube Q11 is connected to the anode of the anti-backflow diode D8 and the input end of the high-side feedback module, and the cathode of the anti-backflow diode D8 is connected to the anode of the driving coil.
3. The circuit of claim 1, wherein the high-side feedback module comprises a resistor R27, a resistor R28, a resistor R29, a resistor R30, a transistor Q12, and a bi-directional transient suppression diode D9, wherein,
A first end of the bidirectional transient suppression diode D9 is connected to the current output end of the high-side driving module and the first end of the resistor R28, a second end of the resistor R28 is connected to the first end of the resistor R30 and the base of the triode Q12, and the second end of the bidirectional transient suppression diode D9, the second end of the resistor R28 and the emitter of the triode Q12 are grounded;
The collector of the triode Q12 is connected to the first end of the resistor R27 and the first end of the resistor R29, the second end of the resistor R27 is connected to a first voltage source, and the second end of the resistor R29 is connected to the first input end of the control module.
4. The circuit of claim 1, wherein the low-side driver module comprises a MOS transistor Q14, a current sense resistor R50, a drive transistor Q16, a drive transistor Q18, a drive optocoupler P3, a drive resistor R49, a drive resistor R44, a drive resistor R42, a drive resistor R47, a drive resistor R40, a drive resistor R38, a zener diode D13, and a delay capacitor C22, wherein,
The drain electrode of the MOS transistor Q14 is connected to the input end of the low-side feedback module and the negative electrode of the driving coil, the grid electrode of the MOS transistor Q14 is connected to the emitter electrode of the driving triode Q16, the first end of the delay capacitor C22, the first end of the driving resistor R42, the cathode of the zener diode D13 and the triode emitter electrode of the driving optocoupler P3, the source electrode of the MOS transistor Q14 is connected to the first end of the driving resistor R49 and the first end of the current detection resistor R50, and the second end of the current detection resistor R50 is grounded;
The base electrode of the driving triode Q16 is connected to the second end of the delay capacitor C22 and the first end of the driving resistor R44, the collector electrode of the driving triode Q16 is connected to the second end of the driving resistor R49 and the base electrode of the driving triode Q18, the collector electrode of the driving triode Q18 is connected to the second end of the driving resistor R44 and the second end of the driving resistor R42, and the emitter electrode of the driving triode Q18, the anode electrode of the zener diode D13 and the second end of the driving resistor R47 are grounded;
The triode collector of the driving optocoupler P3 is connected to the first end of the driving resistor R40, the second end of the driving resistor R40 is connected to the positive electrode of the output power supply, the diode anode of the driving optocoupler P3 is connected to the first end of the driving resistor R38, the second end of the driving resistor R38 is connected to a first voltage source, and the diode cathode of the driving optocoupler P3 is connected to the second output end of the control module.
5. The circuit of claim 1, wherein the low-side feedback module comprises a resistor R32, a resistor R34, a resistor R36, a driving optocoupler P2, and a bi-directional transient suppression diode D11, wherein,
The first end of the bidirectional transient suppression diode D11 is connected to the positive electrode of the output power supply and the first end of the resistor R32, the second end of the resistor R32 is connected to the first end of the resistor R34 and the diode anode of the driving optocoupler P2, and the diode cathode of the driving optocoupler P2 is connected to the second end of the resistor R34, the second end of the bidirectional transient suppression diode D11 is connected to the output end of the low-side driving module;
The triode collector of the driving optocoupler P2 is connected to a first voltage source, the triode emitter of the driving optocoupler P2 is connected to the first end of the resistor R36 and the second input end of the control module, and the second end of the resistor R36 is grounded.
6. The circuit of claim 1, wherein the control module comprises a microcontroller circuit.
7. The circuit of claim 1, wherein the output power source is a BMS control power source.
8. A circuit according to any of claims 3-5, wherein the output voltage of the first voltage source is 3.3V.
9. The circuit of any of claims 1-7, wherein the output voltage of the output power supply is 24V.
10. A relay driving device, comprising:
a relay driving circuit according to any one of claims 1 to 9.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202322847070.8U CN221125812U (en) | 2023-10-23 | 2023-10-23 | Relay driving circuit and device thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202322847070.8U CN221125812U (en) | 2023-10-23 | 2023-10-23 | Relay driving circuit and device thereof |
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| CN221125812U true CN221125812U (en) | 2024-06-11 |
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