CN221101078U - Superhard antireflection film and electronic equipment - Google Patents
Superhard antireflection film and electronic equipment Download PDFInfo
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- CN221101078U CN221101078U CN202323145522.4U CN202323145522U CN221101078U CN 221101078 U CN221101078 U CN 221101078U CN 202323145522 U CN202323145522 U CN 202323145522U CN 221101078 U CN221101078 U CN 221101078U
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- 239000000463 material Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 8
- 229910003564 SiAlON Inorganic materials 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910004481 Ta2O3 Inorganic materials 0.000 claims description 2
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 abstract description 4
- 238000001228 spectrum Methods 0.000 abstract description 3
- 238000005299 abrasion Methods 0.000 abstract 1
- 238000002834 transmittance Methods 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Landscapes
- Surface Treatment Of Optical Elements (AREA)
- Laminated Bodies (AREA)
Abstract
The application provides an ultrahard anti-reflection film and electronic equipment, and relates to the technical field of films. The superhard antireflection film comprises an inner layer matching film stack, an superhard layer and an outer layer matching film stack which are sequentially stacked on the surface of a substrate; the inner layer matching film stack and the outer layer matching film stack are respectively formed by alternately stacking low-refractive-index layers and high-refractive-index layers, and the superhard layer is formed by one or more groups of alternately stacking low-refractive-index material thin layers and superhard material layers. The electronic equipment comprises the superhard antireflection film. The superhard antireflection film provided by the application can keep high nano hardness and abrasion resistance, and has smooth spectrum curve and low reflectivity.
Description
Technical Field
The application relates to the field of diaphragms, in particular to a superhard anti-reflection film and electronic equipment.
Background
With the continuous updating and iteration of consumer electronics, screen window cover plates, lens window lenses and other optical products of digital touch products such as mobile phones, watches, flat panels, vehicle-mounted instruments and the like have the requirements of high transmittance and scratch resistance. Ultrahard anti-reflection films are a class of products developed to meet this need. Most of the existing superhard antireflection films are prepared from high-low refractive index materials and superhard film layers so as to achieve the effects of antireflection and scratch resistance. In order to enable a product to have better scratch resistance, the thickness of an ultra-hard layer is usually increased when the ultra-hard layer is designed in the process of manufacturing an ultra-hard antireflection film, and the ultra-hard layer is usually made of a high refractive index material, so that the increased thickness of the ultra-hard layer can cause the problems of unsmooth designed spectrum curve, rising reflectivity of the film, falling transmittance and the like. Therefore, the foregoing problems associated with the increased thickness of superhard materials are all urgently addressed in the manufacture of superhard anti-reflection films.
Disclosure of utility model
The application aims to provide a superhard anti-reflection film and electronic equipment so as to solve the problems.
In order to achieve the above purpose, the application adopts the following technical scheme:
an ultrahard antireflection film comprises an inner layer matching film stack, an ultrahard layer and an outer layer matching film stack which are sequentially stacked on the surface of a substrate;
The inner layer matching film stack and the outer layer matching film stack are respectively formed by alternately stacking low-refractive-index layers and high-refractive-index layers, and the superhard layer is formed by one or more groups of alternately stacking low-refractive-index material thin layers and superhard material layers.
Preferably, the refractive index of the low refractive index thin layer in the super hard layer is less than the refractive index of the super hard material layer, and each layer thickness of the low refractive index material thin layer is less than 10nm.
The thickness of the thin layer of low refractive index material can influence the overall hardness of the superhard layer, and the overall hardness of the superhard layer can be ensured to be in an ideal range by controlling the thickness of the thin layer of low refractive index material to be below 10 nm. The thicker the thin layer of low refractive index material, the poorer the overall film hardness.
Preferably, the thickness of each of the thin layers of low refractive index material is in the range 5-10nm.
Alternatively, the thickness of each of the thin layers of low refractive index material may be any value between 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, or 5-10 nm.
Preferably, each layer thickness of the thin layer of low refractive index material is the same.
The complexity of the preparation process can be reduced by the same thickness, and the process control difficulty is low.
Preferably, the materials of the low refractive index thin layer and the ultrahard material layer in the ultrahard layer are respectively selected from any one of a silicon-containing compound or a metal compound;
The superhard material layer material has a nano hardness of 11GPa or more.
Preferably, the low refractive index thin layer in the super hard layer is selected from any one of SiO 2、SiON、SiAlON、Al2O3, siAlO, siZrO, siTiO, siNBO;
The material of the super-hard material layer is selected from any one of SiAlN, alN, si 3N4、ZrO2 and SiON, siAlON, ALON.
Preferably, each of the layers of superhard material has a thickness of 50-300nm and the total thickness of the superhard layers is 1-2 μm.
The number of groups of alternating low-refractive-index material thin layers and superhard material layers in the superhard layer is not particularly limited, but the thicker the alternating layers are, the lower the light transmittance is, the corresponding increase of the coating cost is realized, and the general total thickness is 1-2 mu m; the thinner the whole low refractive index material layer is, the thicker the whole superhard material layer is, and the better the whole film layer hardness is.
Alternatively, the thickness of each layer of superhard material may be 50nm, 100nm, 150nm, 200nm, 250nm, 300nm or any value between 50-300 nm; the total thickness of the super-hard layer may be any value between 1 μm, 1.5 μm, 2 μm or 1-2 μm;
preferably, the refractive index of the low refractive index layer in the inner matching film stack and the outer matching film stack is smaller than the refractive index of the high refractive index layer;
The thickness of each layer of the high refractive index layer is 20-300nm, and the thickness of each layer of the low refractive index layer is 20-100nm;
the total thickness of the inner layer matching film stack is 50-500nm; the total thickness of the outer layer matching film stack is 50-500nm.
Alternatively, the thickness of each of the high refractive index layers may be any value between 20nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, or 20-300 nm. The thickness of each of the low refractive index layers may be any value between 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, or 20-100 nm. The total thickness of the inner matching film stack may be any value between 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, or 50-500 nm; the total thickness of the outer matching film stack may be any value between 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, or 50-500 nm.
Preferably, when a plurality of the low refractive index layers are provided, at least one layer is made of SiO 2.
SiO 2 is a low refractive index layer, and a plurality of low refractive index layers are arranged for multi-layer insertion to improve the bandwidth, and increasing SiON, siAlON, al 2O3 insertion too much affects the bandwidth improvement effect, so that in a preferred embodiment, at least one layer of the material is SiO 2.
Preferably, the material of the low refractive index layer is selected from any one of SiO 2、SiON、SiAlON、Al2O3, siAlO, siZrO, siTiO, siNBO;
The material of the high refractive index layer is selected from SiAlN、AlN、Si3N4、ZrO2、Ta2O3、TiO2、Nb2O5、SiON、SiAlON、ALON.
The application also provides electronic equipment comprising the superhard anti-reflection film.
Compared with the prior art, the application has the beneficial effects that:
According to the superhard antireflection film provided by the application, the superhard layer is arranged between the inner layer matching film stack and the outer layer matching film stack, and the low refractive index material thin layer is inserted into the superhard layer to form the superhard material thin layer which is formed by alternately laminating one or more groups of superhard material layers and low refractive index material thin layers, so that the overall thickness of the superhard layer in a film system is increased, and the whole superhard antireflection film realizes smooth spectrum curve (avoids the final color of the film from being reddish) and has low reflectivity while keeping high nano hardness, friction resistance and transmittance.
The superhard antireflection film provided by the application has the nano hardness of more than 11GPa, and the average light transmittance in the wave band range of 400nm-800nm is more than 94%.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present utility model and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of the structure of an ultra-hard anti-reflection film provided by the application;
FIG. 2 is a schematic diagram of the structure of the superhard layer of the superhard anti-reflection film provided by the application;
FIG. 3 is a reflectance curve of the superhard anti-reflection film provided in example 1;
FIG. 4 is a graph showing the transmittance of the super-hard anti-reflection film according to example 1;
FIG. 5 is a reflectance curve of the superhard anti-reflection film provided in example 2;
FIG. 6 is a graph showing the transmittance of the super-hard anti-reflection film according to example 2;
FIG. 7 is a reflectance curve of the superhard anti-reflection film provided in example 3;
FIG. 8 is a graph showing the transmittance of the super-hard anti-reflection film according to example 3;
FIG. 9 is a reflectance curve of the superhard anti-reflection film provided in example 4;
FIG. 10 is a graph showing the transmittance of the super-hard anti-reflection film according to example 4;
FIG. 11 is a reflectance curve of the superhard anti-reflection film provided in example 5;
FIG. 12 is a graph showing the transmittance of the super-hard anti-reflection film according to example 5;
FIG. 13 is a reflectance curve of the superhard anti-reflection film provided in comparative example 1;
FIG. 14 is a graph showing the transmittance of the ultra-hard anti-reflection film provided in comparative example 1;
FIG. 15 is a reflectance curve of the superhard anti-reflection film provided in comparative example 2;
fig. 16 is a graph showing the transmittance of the super-hard anti-reflection film provided in comparative example 2.
Reference numerals:
100-super-hard anti-reflection film; 200-substrate; 310-inner matching film stack; 320—ultra hard layer; 330-outer matching film stack; 321-an ultra-hard material layer; 322-a thin layer of low refractive index material.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.
Firstly, the superhard antireflection film provided by the application is introduced, and the superhard antireflection film is concretely as follows:
referring to fig. 1, the present application provides an ultra-hard anti-reflection film 100, which is disposed on a surface of a substrate 200 and includes an inner matching film stack 310, an ultra-hard layer 320 and an outer matching film stack 330 that are sequentially stacked.
The inner matching film stack 310 and the outer matching film stack 330 are each composed of a high refractive index layer and a low refractive index layer alternately stacked.
As shown in fig. 2, the superhard layer 320 is composed of a plurality of groups of superhard material layers 321 and low refractive index material layers 322 alternately stacked.
In an alternative embodiment, the superhard layer 320 may be comprised of a set of alternating layers 321 of superhard material and layers 322 of low refractive index material.
The ultra-hard anti-reflection film is deposited on the surface of the substrate 200 by PVD (Physical Vapor Deposition ) techniques.
The following shows the scheme provided by the application in specific examples:
example 1
The specific structure of the superhard antireflection film is shown in the following table 1:
Table 1 example 1 concrete structure
The reflectance of the super-hard anti-reflection film obtained in example 1 is shown in fig. 3, and the transmittance is shown in fig. 4.
Example 2
The specific structure of the superhard antireflection film is shown in the following table 2:
TABLE 2 example 2 concrete Structure
The reflectance of the super-hard anti-reflection film obtained in example 2 is shown in fig. 5, and the transmittance is shown in fig. 6.
Example 3
The specific structure of the superhard antireflection film is shown in the following table 3:
TABLE 3 example 3 concrete Structure
The reflectance of the super-hard anti-reflection film obtained in example 3 is shown in fig. 7, and the transmittance is shown in fig. 8.
Example 4
The specific structure of the superhard antireflection film is shown in the following table 4:
TABLE 4 example 4 concrete Structure
The reflectance of the super-hard antireflection film obtained in example 4 is shown in fig. 9, and the transmittance is shown in fig. 10.
Example 5
The specific structure of the superhard antireflection film is shown in the following table 5:
TABLE 5 example 5 concrete Structure
The reflectance of the super-hard antireflection film obtained in example 5 is shown in fig. 11, and the transmittance is shown in fig. 12.
Comparative example 1
To demonstrate the importance of the thin layer 322 of low refractive index material in the ultrahard layer 320, a control test was performed, with the specific structure shown in table 6 below:
TABLE 6 concrete structure of comparative example 1
The reflectance of the super-hard anti-reflection film obtained in comparative example 1 is shown in fig. 13, and the transmittance is shown in fig. 14.
As can be seen from fig. 13 and 14, when the thin layer 322 of low refractive index material in the ultra-hard layer 320 is removed, the reflectivity of the resulting film system increases significantly and the light transmittance decreases significantly.
Comparative example 2
To demonstrate the importance of at least one layer of SiO 2 in the whole film, a control test was performed, and the specific structure is shown in Table 7 below:
TABLE 7 concrete structure of comparative example 2
The reflectance of the super-hard anti-reflection film obtained in comparative example 2 is shown in fig. 15, and the transmittance is shown in fig. 16.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present application have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the application.
Claims (10)
1. The superhard antireflection film is characterized by comprising an inner layer matching film stack, an superhard layer and an outer layer matching film stack which are sequentially laminated on the surface of a substrate;
The inner layer matching film stack and the outer layer matching film stack are respectively formed by alternately stacking low-refractive-index layers and high-refractive-index layers, and the superhard layer is formed by one or more groups of alternately stacking low-refractive-index material thin layers and superhard material layers.
2. The ultra-hard anti-reflection film according to claim 1, wherein the refractive index of the low refractive index thin layer in the ultra-hard layer is smaller than the refractive index of the ultra-hard material layer, and each layer thickness of the low refractive index material thin layer is smaller than 10nm.
3. A superhard anti-reflection film according to claim 2, wherein each layer of the thin layer of low refractive index material has the same thickness.
4. The super-hard film according to claim 2, wherein the material of the low refractive index thin layer and the super-hard material layer in the super-hard layer is selected from any one of a silicon-containing compound or a metal compound, respectively;
The superhard material layer material has a nano hardness of 11GPa or more.
5. The ultra-hard film of claim 4, wherein the low refractive index thin layer in the ultra-hard layer is selected from any one of SiO 2、SiON、SiAlON、Al2O3, siAlO, siZrO, siTiO, siNBO;
The material of the super-hard material layer is selected from any one of SiAlN, alN, si 3N4、ZrO2 and SiON, siAlON, ALON.
6. A superhard antireflection film according to claim 2, wherein each of the layers of superhard material has a thickness of 50-300nm and the total thickness of the superhard layer is 1-2 μm.
7. The super-hard anti-reflection film according to any one of claims 1 to 6, wherein the refractive index of the low refractive index layers in the inner and outer matching film stacks is less than the refractive index of the high refractive index layers;
The thickness of each layer of the high refractive index layer is 20-300nm, and the thickness of each layer of the low refractive index layer is 20-100nm;
the total thickness of the inner layer matching film stack is 50-500nm; the total thickness of the outer layer matching film stack is 50-500nm.
8. The ultra-hard anti-reflection film according to claim 7, wherein when a plurality of the low refractive index layers are provided, at least one layer is made of SiO 2.
9. The super-hard anti-reflection film according to claim 8, wherein the material of the low refractive index layer is selected from any one of SiO 2、SiON、SiAlON、Al2O3, siAlO, siZrO, siTiO, siNBO;
The material of the high refractive index layer is selected from SiAlN、AlN、Si3N4、ZrO2、Ta2O3、TiO2、Nb2O5、SiON、SiAlON、ALON.
10. An electronic device comprising a superhard anti-reflection film according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323145522.4U CN221101078U (en) | 2023-11-21 | 2023-11-21 | Superhard antireflection film and electronic equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202323145522.4U CN221101078U (en) | 2023-11-21 | 2023-11-21 | Superhard antireflection film and electronic equipment |
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| Publication Number | Publication Date |
|---|---|
| CN221101078U true CN221101078U (en) | 2024-06-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202323145522.4U Active CN221101078U (en) | 2023-11-21 | 2023-11-21 | Superhard antireflection film and electronic equipment |
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| Country | Link |
|---|---|
| CN (1) | CN221101078U (en) |
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2023
- 2023-11-21 CN CN202323145522.4U patent/CN221101078U/en active Active
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