CN220999257U - Polysilicon reduction furnace chassis and polysilicon reduction furnace - Google Patents

Abstract

The utility model provides a polycrystalline silicon reduction furnace chassis, wherein a plurality of electrode holes are formed in the surface of the chassis and are used for connecting silicon rods, the electrode holes are sequentially arranged on a plurality of electrode ring belts taking the center of the surface of the chassis as the centroid from inside to outside, the number of the electrode holes on each electrode ring belt is 6n, and n is the arrangement sequence number of each electrode ring belt from inside to outside. The polycrystalline silicon reduction furnace bottom plate has reasonable structural layout, can effectively balance a thermal field, reduce energy consumption, improve quality and promote the improvement of the technical level of the polycrystalline silicon industry, and also provides a polycrystalline silicon reduction furnace.

Description

Polysilicon reduction furnace chassis and polysilicon reduction furnace

Technical Field

The utility model relates to the technical field of polysilicon production, in particular to a polysilicon reducing furnace chassis and a polysilicon reducing furnace.

Background

The field of polysilicon production currently adopts an improved Siemens method to produce polysilicon. The reducing furnace is core equipment for producing polysilicon, and trichlorosilane and hydrogen from a tank area are preheated and metered and then mixed into the polysilicon reducing furnace for vapor deposition reaction to produce polysilicon.

Currently, the main flows of silicon rods adopted by a chassis of a reducing furnace are 40 pairs of rods and 60 pairs of rods. Generally, the higher the number of bars arranged on the chassis of the reduction furnace, the larger the yield and the lower the electricity consumption cost, so that different furnace types such as 72 and 108 pairs of bars exist. However, in practice, after the reduction furnace is enlarged, the problems of uneven thermal field, serious atomization, phase failure and the like exist in the number of rods, so that the operation is unstable, the product quality fluctuates, and the quality of the final product is difficult to maintain at a uniform level.

Disclosure of utility model

The inventor of the present utility model found that the above problems of uneven thermal field, serious atomization, phase failure, etc. occur after the enlargement of the reduction furnace, and that the main reason is that in order to increase the number of rods, the density of local silicon rods is high, and the uneven arrangement causes uneven thermal field and difficult regulation.

Therefore, the utility model aims to solve the technical problems in the prior art, and provides the polycrystalline silicon reduction furnace chassis which is reasonable in structural layout, capable of effectively balancing a thermal field, reducing energy consumption, improving quality and promoting the improvement of the technical level of the polycrystalline silicon industry.

The utility model provides a polycrystalline silicon reduction furnace chassis, wherein a plurality of electrode holes are formed in the surface of the chassis and are used for connecting silicon rods, the electrode holes are sequentially arranged on a plurality of electrode ring belts taking the center of the surface of the chassis as the centroid from inside to outside, the number of the electrode holes on each electrode ring belt is 6n, and n is the arrangement sequence number of each electrode ring belt from inside to outside.

Preferably, the electrode endless belt is provided with seven, so that the total number of the electrode holes is eighty-four pairs.

Preferably, the diameter difference between each adjacent electrode annulus is equal.

Preferably, the plurality of electrode holes on the electrode ring belt are uniformly arranged around the centroid of the electrode ring belt.

Preferably, the electrode ring belt is provided with a plurality of electrode holes in pairs, and each group of electrode holes is uniformly distributed around the centroid of the electrode ring belt.

Preferably, the tray surface of the chassis is further provided with a plurality of feeding nozzles for feeding materials, the feeding nozzles are arranged in a layout mode that one feeding nozzle is arranged at the center of the tray surface, the rest feeding nozzles are sequentially arranged on a plurality of feeding ring belts taking the center of the tray surface as a centroid from inside to outside, and each feeding ring belt is arranged between two adjacent electrode ring belts.

Preferably, the number of the feeding nozzles on each feeding ring belt is 6n, wherein n is an arrangement sequence number of the feeding ring belt from inside to outside, and each feeding nozzle on the feeding ring belt is positioned between two adjacent electrode holes on the electrode ring belt on the inner side of the feeding ring belt in the radial direction of the disk surface.

Preferably, the diameter difference between the feeding endless belt and the two electrode endless belts adjacent thereto is equal.

Preferably, the tray surface of the chassis is also provided with a plurality of tail gas holes, each tail gas hole is uniformly arranged on a tail gas annular belt taking the center of the tray surface as the centroid, and the tail gas annular belt is arranged at the periphery of each electrode annular belt and/or between two adjacent electrode annular belts.

The utility model also provides a polysilicon reducing furnace, which comprises a furnace body and silicon rods, wherein the bottom chassis of the furnace body adopts the polysilicon reducing furnace chassis, the silicon rods are arranged in a plurality, and each silicon rod is connected in each electrode hole formed on the surface of the chassis.

The utility model provides a polycrystalline silicon reduction furnace chassis, wherein electrode holes for connecting silicon rods on the surface of the chassis are arranged in a specific layout mode, the electrode holes are sequentially arranged on a plurality of electrode ring belts taking the center of the surface of the chassis as a centroid from inside to outside, the number of the electrode holes on each electrode ring belt is 6n, and n is the arrangement sequence number of each electrode ring belt from inside to outside. The number of the first rows is six, the number of the second rows is twelve … …, and each row is increased by taking six as a difference value, so that the distance between the electrode holes in the first row and the center of the disk surface is basically the same as the distance between the electrode holes in the adjacent rows, and therefore, in the layout mode, after the electrode holes are arranged in a ring-by-ring manner, the arrangement density of silicon rods connected with the electrode holes in a space of a reduction furnace can be ensured to be as uniform as possible, and the situation that the rod spacing in a single ring is too compact or the rod spacing in the whole disk is too compact when the electrode holes are increased outwards along the ring can not occur.

By adopting the layout mode, the heat field can be effectively balanced due to more reasonable structural layout, the defects of uneven heat field, unstable operation, poor product quality and the like of a large-scale multi-pair rod reduction furnace are overcome, more silicon rods can be laid out under the condition of meeting the uniformity of the heat field, the energy consumption of the reduction furnace is reduced, the manufacturing yield of the reduction furnace is improved, and the stability of the product quality is ensured.

Drawings

FIG. 1 is a schematic view showing the structure of a chassis of a polysilicon reduction furnace in embodiment 1 of the present utility model;

Fig. 2 is a schematic view showing the structure of a chassis of a polysilicon reduction furnace in embodiment 2 of the present utility model.

In the figure: 1. a disk surface; 2. an electrode hole; 3. a feed nozzle; 4. and tail gas holes.

Detailed Description

The following description of the embodiments of the present utility model will be made more apparent, and the embodiments described in detail, but not necessarily all, in connection with the accompanying drawings. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to fall within the scope of the utility model.

In the description of the present utility model, it should be noted that, the terms "upper," "lower," and the like indicate an orientation or a positional relationship based on the orientation or the positional relationship shown in the drawings, and are merely for convenience and simplicity of description, and do not indicate or imply that the apparatus or element in question must be provided with a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present utility model.

In the description of the present utility model, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present utility model, it should be noted that, unless explicitly specified and limited otherwise, the terms "connected," "configured," "mounted," "secured," and the like are to be construed broadly and may be either fixedly connected or detachably connected, or integrally connected, for example; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model can be understood by those skilled in the art according to the specific circumstances.

Example 1

As shown in fig. 1, in the polysilicon reduction furnace chassis of this embodiment, a plurality of electrode holes 2 are formed on a disk surface 1 of the chassis for connecting silicon rods, and the electrode holes 2 are arranged on a plurality of electrode ring belts with the center of the disk surface 1 as the centroid sequentially from inside to outside, and the number of the electrode holes 2 on each electrode ring belt is 6n, where n is the arrangement number of each electrode ring belt from inside to outside.

In this embodiment, the electrode holes 2 on the disk surface 1 for connecting the silicon rods have a specific layout mode, that is, the first row is six, the second row is twelve … …, and so on, and the number of each row is increased by six as a difference value, so that the distance between the electrode holes 2 on the first row and the center of the disk surface 1 and the distance between the adjacent electrode holes 2 are basically the same.

In the layout mode of eight electrode holes in the first row which is commonly adopted in the past, if the distance between every two rings is required to be increased if the distance between the silicon rods is wide, the diameter of each ring is increased, the area of the required disk surface is further increased, the energy consumption is increased instead, and if the layout is required to be compact, the ring distance is reduced, or the hole distance is reduced, the local or whole in-disk uneven condition can be caused. If the layout mode of the first row of four electrode holes is adopted, the space utilization ratio is insufficient.

Therefore, in the layout mode of this embodiment, the distance between the first row of electrode holes 2 and the center of the disk surface 1 is basically the same as the distance between the adjacent electrode holes 2, and after the electrode holes 2 are arranged in a ring-by-ring manner based on the distance, the arrangement density of the silicon rods connected with the electrode holes 2 in the space of the reduction furnace can be ensured to be as uniform as possible, and the situation that the rod distance in a single ring is too close or the rod distance in the whole disk is too close when the electrode holes are gradually increased outwards along the ring can not occur.

By adopting the layout mode of the embodiment, the heat field can be effectively balanced due to more reasonable structural layout, the defects of uneven heat field, unstable operation, poor product quality and the like of a large-scale multi-pair rod reduction furnace are overcome, more silicon rods can be laid under the condition of uniform heat field, heat radiation among the silicon rods is fully utilized, the energy consumption of the reduction furnace is reduced, the heat field in the furnace is optimized, the manufacturing yield of the reduction furnace is improved, the material and energy exchange in the furnace is enhanced, and the product quality stability is ensured.

In this embodiment, the electrode ring belt is provided with seven, and the number of the electrode holes 2 on each electrode ring belt from inside to outside is 6, 12, 18, 24, 30, 36 and 42 in turn, so that the total number of the electrode holes 2 is eighty four pairs.

In this embodiment, the diameter differences between the adjacent electrode zones are equal, that is, the distances between the adjacent electrode zones are equal (for example, the diameter difference between the electrode zones of the first row and the electrode zone of the second row is equal to the diameter difference between the electrode zone of the second row and the electrode zone of the third row), so that the distance difference between the adjacent electrode holes 2 across the zones is extremely small, and the uniformity of the layout of the whole disk surface 1 is ensured.

In this embodiment, the diameter of the electrode annulus is determined by the spacing and number of electrode holes 2. The smaller the electrode hole 2 pitch, the smaller the number of electrodes, the smaller the diameter per ring. The smaller the diameter per ring, the smaller the diameter of the chassis. The smaller the diameter of the chassis is, the larger the distribution density of the silicon rods is, and the lower electricity consumption of the reduction furnace is possible to be obtained. However, the silicon rod distribution density is increased, heat accumulation can be caused, the gas phase temperature is high, and abnormal conditions such as atomization phase failure are aggravated. Therefore, the diameter difference between the annular bands of the adjacent electrodes is 200-600 mm, so that the balance condition between the distribution density and the atomization phase failure can be considered, the aggravation of the atomization phase failure condition can not occur in the range, and the distribution density of the silicon rods can be increased as much as possible.

In this embodiment, each electrode ring belt is a concentric ring, and the plurality of electrode holes 2 on the electrode ring belt are uniformly arranged around the centroid (i.e. the center of a circle) of the electrode ring belt, so that the hole distances are consistent, and in this embodiment, the distance between adjacent electrode holes 2 in the same ring is 250mm.

In this embodiment, the tray surface 1 of the chassis is further provided with a plurality of feeding nozzles 3 for feeding materials, and the feeding nozzles 3 are arranged in a manner that one feeding nozzle 3 is disposed at the center of the tray surface 1, and the rest of feeding nozzles 3 are sequentially disposed on a plurality of feeding ring belts with the center of the tray surface 1 as a centroid from inside to outside, and each feeding ring belt is disposed between two adjacent electrode ring belts.

In this embodiment, the diameter difference between the feeding zone and the two electrode zones adjacent thereto is equal, i.e., the feeding zone is located on the center circle of the two electrode zones adjacent thereto. The arrangement mode ensures that the materials introduced into the furnace can be as uniform as possible, ensures that the contact degree of each silicon rod and the materials is uniform, and effectively improves the running stability and the productivity.

In this embodiment, the number of the feeding nozzles 3 on each feeding ring belt is 6n, where n is the number of the feeding ring belt from inside to outside, and in the radial direction of the disk surface 1, each feeding nozzle 3 on the feeding ring belt is located between two adjacent electrode holes 2 on the electrode ring belt inside the feeding ring belt, so that the feeding manner is further optimized, and the contact uniformity of the silicon rod and the material is further improved.

In the embodiment, seven rings are arranged on the feeding ring belt and are distributed in concentric circles, one feeding nozzle 3 is arranged in the center of the disk surface from inside to outside, and the number of the feeding nozzles 3 of each ring is 6, 12, 18, 24, 30 and 36 respectively. The feed nozzles 3 may or may not be uniformly distributed within the same ring, and in this embodiment are preferably uniformly distributed.

In this embodiment, the disc surface 1 of the chassis is further provided with a plurality of tail gas holes 4, which are identical to tail gas emission, each tail gas hole 4 is uniformly arranged on a tail gas ring belt taking the center of the disc surface 1 as a centroid, the tail gas ring belt is arranged at the periphery of each electrode ring belt, namely, at the edge of the disc surface 1, or between two adjacent electrode ring belts, and the aperture of the tail gas hole 4 at the edge of the disc surface 1 is not smaller than that of the tail gas hole 4 in the middle of the disc surface 1. In this embodiment, the exhaust gas holes 4 are provided at the edge of the disk surface, and when selected to be provided between the adjacent two electrode endless belts, may be provided on the second row of the feed endless belts, instead of the feed nozzles 3 at the corresponding positions. The tail gas holes 4 on the tail gas ring belt are four to ten in number and are uniformly distributed on the tail gas ring belt, and six tail gas holes are formed in the embodiment.

In this embodiment, the above-mentioned endless belts (electrode endless belt, exhaust endless belt, feed endless belt) are laid out on the chassis in the form of endless belt layout, that is, in an annular/endless belt-shaped region centered on the center of the chassis.

Example 2

The present embodiment is substantially the same as embodiment 1, except that in this embodiment, as shown in fig. 2, the electrode ring belt has a polygonal structure (each electrode hole 2 is located at each vertex), and the plurality of electrode holes 2 on the electrode ring belt are grouped in pairs, and each group of electrode holes 2 is uniformly arranged around the centroid of the electrode ring belt. The silicon rods in the reduction furnace are controlled in groups of two during the growth process. Thus, in a group-by-group manner, the silicon rod spacing between each group can be increased or decreased. The silicon rods are regarded as a whole to be uniformly distributed so as to balance heat, thereby reducing the phenomena of atomization, rod inversion and the like.

In this embodiment, the distance between each electrode hole 2 and the electrode hole 2 adjacent to the group is 250mm, and the distance between each electrode hole 2 and the electrode hole 2 adjacent to the group is 200 mm-500 mm.

In the embodiment, one feeding nozzle 3 is arranged at the center of the disk surface 1, and the rest is divided into six rings, wherein each ring is respectively 6, 8, 18, 24, 30 and 36 from inside to outside. The reason for the fact that the second rings are 8 instead of 12 is that the four original feed nozzles 3 are provided with tail gas holes 4, i.e. the feed annulus coincides with one tail gas annulus. Each feeding annular belt is distributed in concentric circles.

In the embodiment, the other tail gas ring belt is arranged at the edge of the disk surface 1, and eight tail gas holes 4 are uniformly distributed on the tail gas ring belt.

Example 3

The polycrystalline silicon reduction furnace of the embodiment comprises a furnace body and silicon rods, wherein the bottom chassis of the furnace body adopts the polycrystalline silicon reduction furnace chassis in embodiment 1 or embodiment 2, the silicon rods are arranged in a plurality of numbers, and each silicon rod is connected in each electrode hole 2 formed in the disk surface 1 of the chassis. The chassis can be made of stainless steel or other composite materials.

According to the embodiment, the chassis and the balanced thermal field are reasonably arranged, so that the density of the silicon rods is improved, the heat radiation among the silicon rods is fully utilized, the productivity is effectively improved, and the power consumption is reduced. Meanwhile, the internal heating field in the furnace is optimized, and the material and energy exchange in the furnace is enhanced, so that the product quality can be improved, and the running stability is improved.

It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present utility model, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the utility model, and are also considered to be within the scope of the utility model.

Claims (10)

1. The utility model provides a polycrystalline silicon reducing furnace chassis which characterized in that: a plurality of electrode holes (2) are arranged on the disk surface (1) of the chassis and are used for connecting silicon rods,

The electrode holes (2) are arranged on a plurality of electrode ring belts taking the center of the disk surface (1) as the centroid from inside to outside in sequence,

The number of the electrode holes (2) on each electrode ring belt is 6n, wherein n is the arrangement sequence number of each electrode ring belt from inside to outside.

2. The polysilicon reduction furnace chassis of claim 1, wherein: the number of the electrode ring belts is seven, so that the total number of the electrode holes (2) is eighty four pairs.

3. The polysilicon reduction furnace chassis of claim 1, wherein: the diameter difference between each adjacent electrode ring belt is equal.

4. A polycrystalline silicon reduction furnace chassis according to any one of claims 1 to 3, characterized in that: the plurality of electrode holes (2) on the electrode ring belt are uniformly distributed around the centroid of the electrode ring belt.

5. A polycrystalline silicon reduction furnace chassis according to any one of claims 1 to 3, characterized in that: the electrode ring belt is provided with a plurality of electrode holes (2) which are arranged in pairs, and each group of electrode holes (2) is uniformly distributed around the centroid of the electrode ring belt.

6. The polysilicon reduction furnace chassis of claim 1, wherein: a plurality of feeding nozzles (3) are also arranged on the disc surface (1) of the chassis and are used for feeding materials,

The arrangement mode of the feeding nozzles (3) is that one feeding nozzle (3) is arranged at the center of the disk surface (1), the rest feeding nozzles (3) are sequentially arranged on a plurality of feeding annular belts taking the center of the disk surface (1) as the centroid from inside to outside,

Each of the feed zones is disposed between two adjacent electrode zones.

7. The polysilicon reduction furnace chassis of claim 6, wherein: the number of the feeding nozzles (3) on each feeding ring belt is 6n, wherein n is the arrangement sequence number of each feeding ring belt from inside to outside,

And in the radial direction of the disk surface (1), each feeding nozzle (3) on the feeding annular belt is positioned between two adjacent electrode holes (2) on the electrode annular belt on the inner side of the feeding annular belt.

8. The polysilicon reduction furnace chassis of claim 6, wherein: the diameter difference between the feeding endless belt and the two electrode endless belts adjacent to the feeding endless belt is equal.

9. The polysilicon reduction furnace chassis of claim 1, wherein: a plurality of tail gas holes (4) are also arranged on the disk surface (1) of the chassis,

The tail gas holes (4) are uniformly arranged on a tail gas ring belt taking the center of the disk surface (1) as the centroid,

The tail gas endless belt is arranged on the periphery of each electrode endless belt and/or between two adjacent electrode endless belts.

10. A polycrystalline silicon reduction furnace, characterized in that: comprising a furnace body and a silicon rod, wherein the bottom chassis of the furnace body adopts the polysilicon reduction furnace chassis of any one of claims 1 to 9,

The silicon rods are arranged in a plurality, and each silicon rod is connected to each electrode hole (2) formed in the disc surface (1) of the chassis.