CN213231540U - 63-pair-rod reduction furnace chassis for polycrystalline silicon production - Google Patents
63-pair-rod reduction furnace chassis for polycrystalline silicon production Download PDFInfo
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- CN213231540U CN213231540U CN202021867941.2U CN202021867941U CN213231540U CN 213231540 U CN213231540 U CN 213231540U CN 202021867941 U CN202021867941 U CN 202021867941U CN 213231540 U CN213231540 U CN 213231540U
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Abstract
The utility model discloses a 63 pairs of excellent reduction furnace chassis for in polycrystalline silicon production belongs to polycrystalline silicon production facility technical field. The silicon rod conveying device comprises a chassis body and 63 pairs of silicon rods, wherein the 63 pairs of silicon rods are divided into six sections and are arranged on the chassis body in a circular ring shape to form six rings of silicon rod rings; a central tail gas outlet is formed in the circle center of the chassis body, and peripheral tail gas outlets which are uniformly distributed are formed between the sixth silicon rod ring and the inner wall of the furnace cylinder of the reduction furnace; the silicon rod silicon ingot mould also comprises four circles of air inlet nozzle rings arranged in six circles of silicon rod rings, and air inlet nozzles on any circle of air inlet nozzle rings are uniformly distributed; the central tail gas outlet, the silicon rod pair, the air inlet nozzle and the peripheral tail gas outlet are arranged on the chassis body in six equal parts to form six fan-shaped areas with included angles of 60 degrees, and six airflow channels are formed at the edges of the six fan-shaped areas. The technical scheme effectively ensures the uniformity of the gas field, realizes the stability of the gas field control index in the vapor deposition furnace and improves the effective yield.
Description
Technical Field
The utility model relates to a reduction furnace chassis especially relates to a 63 is to excellent reduction furnace chassis for in polycrystalline silicon production, belongs to polycrystalline silicon production facility technical field.
Background
Polycrystalline silicon is a basic material for the electronics industry, and is used in particular for the manufacture of photovoltaic power generation-solar cells, integrated circuits, semiconductor separation elements, power electronics and the like. Because the polycrystalline silicon industry belongs to the high energy consumption industry, the reduction of the energy consumption of the polycrystalline silicon production has great practical value, at present, the production of the polycrystalline silicon generally adopts an improved Siemens method, wherein the energy consumption is mainly concentrated in a polycrystalline silicon reduction furnace, and therefore, the reduction of the energy consumption of the polycrystalline silicon reduction furnace is an important way for reducing the energy consumption of the polycrystalline silicon production.
In the polysilicon reduction furnace, a group of electrified silicon rods are arranged on a chassis, the chassis is electrified to heat the silicon rods to 1000-1100 ℃, then raw material gas mixed by trichlorosilane and hydrogen is introduced into the polysilicon reduction furnace, and the raw material gas is reacted at high temperature in the furnace to deposit silicon on the silicon rods. However, the existing chassis of the reduction furnace has the following problems: 1. the temperature of a space gas field in the reduction furnace is easily overhigh, so that the feed gas deposits silicon on the chassis, the power consumption of the reduction furnace is increased, and meanwhile, the loss of the silicon raw material is caused; 2. the chassis of the polycrystalline silicon reduction furnace has uneven temperature, which easily causes uneven temperature of a flow field in the furnace, reduces reaction efficiency, increases the occurrence probability of side reaction and simultaneously causes waste of raw material gas; 3. the effective space utilization rate is low, so that the silicon rod conversion rate is low, and the like.
The prior art 'CN 201611023921.5 base plate of a 60-pair rod improved Siemens method polycrystalline silicon reduction furnace' solves the problems of poor quality, high energy consumption, low yield and low primary conversion rate of polycrystalline silicon produced by the existing improved Siemens method polycrystalline silicon reduction furnace. Wherein, disclose: the 8 electrodes, the 16 electrodes, the 24 electrodes, the 32 electrodes and the 40 electrodes are sequentially distributed on an electrode one-ring annular central line, an electrode two-ring annular central line, an electrode three-ring annular central line, an electrode four-ring annular central line and an electrode five-ring annular central line; a central mixed gas inlet nozzle is arranged at the central position of the chassis; 8 first mixed gas inlet nozzles, 12 second mixed gas inlet nozzles, 16 third mixed gas inlet nozzles and 4 mixed gas outlets are sequentially arranged on the annular central line of the mixed gas inlet nozzle ring, the annular central line of the mixed gas inlet nozzle ring and the annular central line of the chassis outlet ring.
The prior art "CN 201710218196.5 is a chassis of a 48-pair rod reduction furnace" discloses: the electrode structure comprises a chassis body and electrodes, wherein the electrodes are provided with 48 pairs, are arranged on the chassis in a four-ring structure to form four electrode rings, and are an electrode ring I, an electrode ring II, an electrode ring III and an electrode ring IV from inside to outside in sequence; both sides of each circle of electrode ring are provided with a circle of air outlet ring consisting of a plurality of air outlets and a circle of air inlet ring consisting of a plurality of air inlets; the air inlet ring is provided with three circles, wherein the inner side of the first electrode ring and the outer side of the four electrode rings are respectively provided with one circle. The invention can promote the circulation of the material gas on the surface of the silicon rod, and obtain a high-quality polycrystalline silicon rod; the inner cooling of the inner wall of the bell jar can be realized, the cleaning frequency of the inner wall of the bell jar is reduced, the heat radiation loss in the furnace is reduced, and the production efficiency is improved; can improve the conversion rate of materials and reduce the energy consumption of production.
The prior art "CN 201911312023.5 a reduction furnace chassis structure" discloses: including the chassis main part, arrange a plurality of groups silicon rod in proper order on the chassis main part from inside to outside to and arrange air inlet and gas outlet on the chassis main part, every group silicon rod is enclosed into a concentric circle by many pairs of silicon rod, and the interval between arbitrary two sets of adjacent silicon rods is equal, and marks as SA, and in the same group silicon rod, the interval of two silicon rods of arbitrary a pair of silicon rod marks as SB, is in the interval of two arbitrary adjacent silicon rods of different pairs of silicon rods respectively and marks as SC, and SB does not equal SC. According to the invention, the mutual radiation distance of the silicon rods between layers is close by controlling the same distance between the concentric circles, so that the mutual radiation heat around each silicon rod is close, and meanwhile, the uniformity of a temperature field and a flow field is ensured by adopting a mode of uniformly distributing inlet and outlet air, and the problem of large rod distribution size of a large furnace type is solved.
The prior art "CN 201921037108.2 a large reduction furnace chassis" discloses: including electrode hole, feed nozzle and tail gas pocket, electrode hole, feed nozzle and tail gas pocket and chassis flange, chassis panel etc. make up into the reduction furnace chassis jointly, and feed nozzle includes feed nozzle and four rings of feed nozzle in one, interior feed nozzle is located the center on chassis, and four rings of feed nozzle are ring distribution on the chassis, the electrode hole outwards is equipped with 7 rings of electrode holes along the chassis center in proper order, and interior 4 rings of electrode hole interrelationships are regular hexagon and distribute, and outer 3 rings of electrode hole interrelationships are the concentric circles, the tail gas pocket is located the chassis outside. The utility model integrates various heat generated in the reduction reaction process, reasonably utilizes the heat radiation among silicon rods, effectively controls the atomization by the heat conduction of cold and hot materials, and promotes the primary conversion rate of polycrystalline silicon to 11-12%; the deposition speed of the polysilicon is increased to 160-180kg/h, the reduction power consumption is reduced to 35kw/kgSi, and the production cost of the polysilicon is greatly reduced.
The prior art "CN 201120085522.8 polysilicon reducing furnace" discloses: including furnace body and chassis, have a plurality of pairs of evenly distributed's electrode on the chassis, the arranging of electrode is honeycomb, specifically is: the center of the chassis is provided with six electrodes which are arranged in a regular hexagon by taking the center of the chassis as a central point, and the six electrodes are respectively positioned at six vertexes of the regular hexagon; the regular hexagon is taken as the center, other electrodes are arranged outwards, and the connecting line of the outermost layer electrode is approximately a circle taking the center of the chassis as the center of the circle; simultaneously, still disclose: the area provided with the silicon core is averagely divided into 3 sectors with included angles of 120 degrees, the arrangement mode of the silicon core of each sector is symmetrical about the center of the chassis, and the number of electrode pairs arranged on the chassis is 3, 42, 48, 54, 63 and 84. The embodiment of the utility model provides a polycrystalline silicon reduction furnace has improved the quality of polycrystalline silicon product to, through the logarithm of extension electrode, when guaranteeing product quality, can also reduce the energy consumption of the polycrystalline silicon product of production unit quality.
Disclosure of Invention
The utility model aims to overcome the defects of the prior art and provides a 63-pair rod reduction furnace chassis used in the production of polycrystalline silicon. According to the technical scheme, the uniformity of the gas field is effectively guaranteed, the stability of the gas field control index in the vapor deposition furnace is realized, and the effective yield is improved by the arrangement and the quantity limitation of the silicon rods, the central tail gas outlet, the peripheral tail gas outlet, the gas inlet nozzles and the like.
In order to achieve the technical purpose, the following technical scheme is proposed:
a chassis of a 63-pair rod reduction furnace used in polysilicon production comprises a circular chassis body and 63 pairs of silicon rods distributed on the chassis body from inside to outside, wherein the silicon rods are arranged in concentric circles;
the 63 pairs of silicon rods are divided into six sections and are arranged on the chassis body in a ring shape to form six rings of silicon rod rings, namely a first silicon rod ring, a second silicon rod ring, a third silicon rod ring, a fourth silicon rod ring, a fifth silicon rod ring and a sixth silicon rod ring from inside to outside in sequence; the number of silicon rod pairs on each circle of silicon rod ring is a multiple of 3, and the number of silicon rod pairs is increased from inside to outside one by one;
the distance between any two adjacent silicon rod rings is 224-229 mm; on the same circle of silicon rod ring, the distance between any two adjacent silicon rods is 240 mm; the distance between the sixth silicon rod ring and the inner wall of the furnace cylinder of the reduction furnace is 323 mm; compared with other silicon rod arrangement in the prior art, the arrangement mode realizes the improvement of the distribution density of the silicon rods in the limited space by reducing the distance between the rings; in the relative space, the larger the ratio of the cross section to the total sectional area of the silicon rod is, the larger the effective utilization rate of the space in the vapor deposition furnace is, and the higher the primary conversion rate is;
the chassis body adopts three phases for power supply, and silicon rod phase splitting is carried out by 3 pairs of phases x 6, 3 pairs of phases x 6 and 3 pairs of phases x 9, so that the purposes that the electrode phase splitting does not span a circle and the same circle has better homothermal property are achieved;
a central tail gas outlet is formed in the circle center of the chassis body, and peripheral tail gas outlets which are uniformly distributed are formed between the sixth silicon rod ring and the inner wall of the furnace barrel of the reduction furnace; a first air inlet nozzle ring is arranged between the second silicon rod ring and the third silicon rod ring, a second air inlet nozzle ring is arranged between the third silicon rod ring and the fourth silicon rod ring, a third air inlet nozzle ring is arranged between the fourth silicon rod ring and the fifth silicon rod ring, a fourth air inlet nozzle ring is arranged between the fifth silicon rod ring and the sixth silicon rod ring, and air inlet nozzles on any circle of air inlet nozzle rings are uniformly distributed; the arrangement mode of the central tail gas outlet, the peripheral tail gas outlet and the gas inlet nozzle effectively ensures the uniformity of a gas field;
wherein, based on the silicon rod of different rings to, be the air inlet nozzle, peripheral tail gas export and the central tail gas export that four rings were arranged, be 6 equalling settings on the chassis body, specifically do: the center of the chassis body is taken as the circle center, the area provided with the central tail gas outlet, the silicon rod pair, the air inlet nozzle and the peripheral tail gas outlet is averagely divided into six fan-shaped areas with the included angle of 60 degrees, and the arrangement modes of the central tail gas outlet, the silicon rod pair, the air inlet nozzle and the peripheral tail gas outlet in each fan-shaped area are in radiation symmetry about the circle center of the chassis body, so that the stability of the gas field control index in the vapor deposition furnace is realized;
the edges of the six fan-shaped areas form six airflow channels, so that high-temperature gas is effectively guided, and the high-temperature gas is quickly diffused to a tail gas outlet by the shortest route and the minimum flow resistance, so that the phenomenon of overhigh temperature of a space gas field is avoided.
Further, 3 pairs of silicon rods are uniformly distributed on the first silicon rod ring, 6 pairs of silicon rods are uniformly distributed on the second silicon rod ring, 9 pairs of silicon rods are uniformly distributed on the third silicon rod ring, 12 pairs of silicon rods are uniformly distributed on the fourth silicon rod ring, 15 pairs of silicon rods are uniformly distributed on the fifth silicon rod ring, and 18 pairs of silicon rods are uniformly distributed on the sixth silicon rod ring; more silicon rod pairs are arranged in a limited furnace cylinder inner diameter space, so that the yield of a single furnace is greatly improved.
Further, the inner diameter of the furnace cylinder of the reduction furnace is 3400mm, the inner diameter of a concentric circle where the first silicon rod ring is located is 480mm, the inner diameter of a concentric circle where the second silicon rod ring is located is 927mm, the inner diameter of a concentric circle where the third silicon rod ring is located is 1382mm, the inner diameter of a concentric circle where the fourth silicon rod ring is located is 1839mm, the inner diameter of a concentric circle where the fifth silicon rod ring is located is 2296mm, and the inner diameter of a concentric circle where the sixth silicon rod ring is located is 2754 mm.
Furthermore, the inner diameter of the first air inlet nozzle ring is 1155mm, and the number of the air inlet nozzles is 6; the inner diameter of the second air inlet nozzle ring is 1610mm, and the number of the air inlet nozzles is 6; the inner diameter of the third air inlet nozzle ring is 2067mm, and the number of the air inlet nozzles is 12; the inner diameter of the fourth air inlet nozzle ring is 2067mm, and the number of the air inlet nozzles is 6;
wherein the inner diameters of the air inlet nozzles on the first air inlet nozzle ring and the second air inlet nozzle ring are both 10.5mm, and the total sectional areas of the air inlet nozzles on the two-ring air inlet nozzle ring are 1038.6 mm, which account for 28.7% of the total sectional areas (3613.8 mm) of all the air inlet nozzles; then, the total number of pairs of silicon rods on the three silicon rod rings is 18 pairs and accounts for 28.6% of the number of pairs (63 pairs) of all the silicon rods by combining the first silicon rod ring, the second silicon rod ring and the third silicon rod ring, so that the ratio of the sectional area of the air inlet nozzle to the number of pairs of silicon rods is proper, the central tail gas outlet accounts for a larger design, and the whole gas field is deviated to the central tail gas outlet; the second air inlet nozzle ring is an inner and outer boundary designed for the furnace type of the reduction furnace, the inner side is 9 pairs of silicon rods on the third silicon rod ring, the outer side is 12 pairs of silicon rods on the fourth silicon rod ring, and the air inlet nozzles on the second air inlet nozzle ring provide fresh feed gas for the two circles of silicon rods;
wherein, on the third intake nozzle ring and the fourth intake nozzle ring, the inner diameters of the intake nozzles are both 13.5mm, and the total cross-sectional areas of the intake nozzles on the two-ring intake nozzle ring are 2575.2 mm, which account for 71.3% of the total cross-sectional areas (3613.8 mm) of all the intake nozzles; in combination with the fourth, fifth, and sixth silicon rod rings, the total number of pairs of silicon rods in the three silicon rod rings is 45 pairs, and accounts for 71.4% of the total number of pairs of silicon rods (63 pairs), and therefore, the ratio of the cross-sectional area of the air inlet nozzle to the number of pairs of silicon rods is appropriate.
Further, the central tail gas outlet DN200, which has a precise size of Φ 219.1 × 12.5, an effective inner diameter 194.1mm and an effective sectional area 29574.7 mm, occupies 40.2% of the total sectional area of all tail gas outlets, is greater than the total sectional area ratio (28.7%) of the air inlet nozzles on the two circles of the first air inlet nozzle ring and the second air inlet nozzle ring, is also greater than the total silicon rod pair ratio (28.6%) of the silicon rods on the three circles of the first silicon rod ring, the second silicon rod ring and the third silicon rod ring, and is greater than the distribution ratio of the inner-circle silicon rod pair number pair;
the number of the peripheral tail gas outlets is 6, namely 6 peripheral tail gas outlets are arranged on the periphery of the silicon rod ring, so that the uniform distribution and the flow stability of the airflow field are effectively improved; the peripheral tail gas outlet phi 96.7 and the 44042.7 mm sectional areas of the 6 peripheral tail gas outlets account for 59.8% of the total sectional area of all the tail gas outlets.
In the technical solution, the positional relationships such as "from inside to outside", "concentric circles", "adjacent to each other", "at the center of a circle", "in radial symmetry", and "in uniform distribution" are defined according to the actual usage status, and are conventional terms in the technical field and conventional terms in the actual usage process of the skilled person.
By adopting the technical scheme, the beneficial technical effects brought are as follows:
1) in the utility model, the silicon rods, the central tail gas outlet, the peripheral tail gas outlet and the air inlet nozzle are equal to the arrangement mode on the chassis body, and under the limited space of the furnace barrel of the reduction furnace, more silicon rods are arranged in a standard rectangular area of the arrangement of a single furnace in a reduction plant, so that even on the basis of the same production period, the same conversion rate and the same power consumption, higher deposition rate of the single furnace is obtained, higher output of the single furnace is realized, higher production output of unit plant area is obtained, and the production cost is effectively reduced;
2) in the utility model, the silicon rod, the central tail gas outlet, the peripheral tail gas outlet and the air inlet nozzle are equal to the arrangement mode on the chassis body, and the problems of high temperature leakage, high voltage creepage, residual material pollution and the like are effectively eliminated;
3) in the utility model, the arrangement modes of the silicon rods, the central tail gas outlet, the peripheral tail gas outlet, the air inlet nozzles and the like, and the quantity, the size and the like of the silicon rods, the central tail gas outlet, the peripheral tail gas outlet, the air inlet nozzles and the like are limited, so that the size of the graphite assembly is greatly reduced, and the cost of single furnace material consumption is reduced; meanwhile, the heat exchange of the chassis of the reduction furnace is strengthened, the temperature uniformity of the chassis is improved, the production efficiency and quality of polycrystalline silicon are effectively improved, and the yield is effectively ensured.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of the split-phase electrode of the present invention;
FIG. 3 is a schematic view of the middle sector of the present invention;
FIG. 4 is a schematic view of the air flow passage of the present invention;
FIG. 5 is a schematic diagram of the distribution of the central exhaust gas outlet and the peripheral exhaust gas outlets of the present invention;
FIG. 6 is a schematic view of an inner gas field of the reduction furnace according to the present invention, in which the second nozzle ring for gas inlet is used as a boundary line of the design of the reduction furnace;
FIG. 7 is a schematic view of an outer gas field of the reducing furnace according to the present invention, in which the second nozzle ring for gas inlet is used as a boundary line of the design of the reducing furnace profile;
fig. 8 is a schematic diagram (one) illustrating three phases of power supply to a silicon rod according to example 4 of the present invention;
fig. 9 is a schematic diagram (two) illustrating power supply of the silicon rods by three phases in example 4 of the present invention;
fig. 10 is a schematic diagram (iii) illustrating three phases of power supply to the silicon rod in example 4 of the present invention;
in the figure: 1. chassis body, 2, silicon rod, 3, first silicon rod ring, 4, second silicon rod ring, 5, third silicon rod ring, 6, fourth silicon rod ring, 7, fifth silicon rod ring, 8, sixth silicon rod ring, 9, central tail gas export, 10, peripheral tail gas export, 11, air inlet nozzle, 12, first air inlet nozzle ring, 13, second air inlet nozzle ring, 14, third air inlet nozzle ring, 15, fourth air inlet nozzle ring, 16, airflow channel.
Detailed Description
In the following, the technical solutions in the embodiments of the present invention are clearly and completely described, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
Example 1
As shown in fig. 1: a chassis of a 63-pair rod reduction furnace used in polysilicon production comprises a circular chassis body 1 and 63 pairs of silicon rods distributed on the chassis body 1 from inside to outside, wherein the silicon rods 2 are arranged in concentric circles;
63, dividing the silicon rods into six annular silicon rod rings to form six rings of silicon rod rings, namely a first silicon rod ring 3, a second silicon rod ring 4, a third silicon rod ring 5, a fourth silicon rod ring 6, a fifth silicon rod ring 7 and a sixth silicon rod ring 8 from inside to outside in sequence; the number of silicon rod pairs on each circle of silicon rod ring is a multiple of 3, and the number of silicon rod pairs is increased from inside to outside one by one;
as shown in fig. 5: a central tail gas outlet 9 is arranged at the circle center of the chassis body 1, and peripheral tail gas outlets 10 which are uniformly distributed are arranged between the sixth silicon rod ring 8 and the inner wall of the furnace cylinder of the reduction furnace;
a first air inlet nozzle ring 12 is arranged between the second silicon rod ring 4 and the third silicon rod ring 5, a second air inlet nozzle ring 13 is arranged between the third silicon rod ring 5 and the fourth silicon rod ring 6, a third air inlet nozzle ring 14 is arranged between the fourth silicon rod ring 6 and the fifth silicon rod ring 7, a fourth air inlet nozzle ring 15 is arranged between the fifth silicon rod ring 7 and the sixth silicon rod ring 8, and the air inlet nozzles 11 on any circle of air inlet nozzle rings 11 are uniformly distributed;
the arrangement modes of the silicon rod 2, the central tail gas outlet 9, the peripheral tail gas outlet 10 and the air inlet nozzle 11 effectively ensure the uniformity of an air field;
wherein, based on the silicon rod of different rings to, be the air inlet nozzle 11, peripheral tail gas export 10 and the central tail gas export 9 that four rings were arranged, be 6 equalling settings on chassis body 1, specifically do: taking the center of the chassis body 1 as a circle center, the area provided with the central tail gas outlet 9, the silicon rod pair, the air inlet nozzle 11 and the peripheral tail gas outlet 10 is averagely divided into six sector areas (as shown in fig. 3) with an included angle of 60 degrees, and the arrangement modes of the central tail gas outlet 9, the silicon rod 2 pair, the air inlet nozzle 11 and the peripheral tail gas outlet 10 in each sector area are in radiation symmetry about the circle center of the chassis body 1, so that the stability of the gas field control index in the vapor deposition furnace is realized;
as shown in fig. 4: six airflow channels 16 are formed at the edges of the six fan-shaped areas, so that high-temperature gas is effectively guided and quickly diffused to a tail gas outlet by the shortest route and the minimum flow resistance, and the phenomenon of overhigh temperature of a space gas field is avoided.
Example 2
Based on the embodiment 1, the present embodiment is further,
3 pairs of silicon rods are uniformly distributed on the first silicon rod ring 3, 6 pairs of silicon rods are uniformly distributed on the second silicon rod ring 4, 9 pairs of silicon rods are uniformly distributed on the third silicon rod ring 5, 12 pairs of silicon rods are uniformly distributed on the fourth silicon rod ring 6, 15 pairs of silicon rods are uniformly distributed on the fifth silicon rod ring 7, and 18 pairs of silicon rods are uniformly distributed on the sixth silicon rod ring 8; more silicon rod pairs are arranged in a limited furnace cylinder inner diameter space, so that the yield of a single furnace is greatly improved.
Example 3
Based on examples 1-2, this example was further,
the distance between any two adjacent silicon rod 2 rings is 224-229 mm; on the same circle of silicon rod ring, the distance between any two adjacent silicon rods 2 is 240 mm; the distance between the sixth silicon rod ring 8 and the inner wall of the reduction furnace cylinder is 323 mm; compared with the arrangement of other silicon rods in the prior art, the arrangement mode realizes the improvement of the distribution density of the silicon rods 2 in the limited space by reducing the distance between the rings; in the relative space, the larger the ratio of the cross section to the total sectional area of the silicon rod is, the larger the effective utilization rate of the space in the vapor deposition furnace is, and the higher the primary conversion rate is;
the inner diameter of the furnace barrel of the reduction furnace is 3400mm, the inner diameter of a concentric circle where the first silicon rod ring 3 is located is 480mm, the inner diameter of a concentric circle where the second silicon rod ring 4 is located is 927mm, the inner diameter of a concentric circle where the third silicon rod ring 5 is located is 1382mm, the inner diameter of a concentric circle where the fourth silicon rod ring 6 is located is 1839mm, the inner diameter of a concentric circle where the fifth silicon rod ring 7 is located is 2296mm, and the inner diameter of a concentric circle where the sixth silicon rod ring 8 is located is 2754 mm;
the inner diameter of the first air inlet nozzle ring 12 is 1155mm, and the number of the air inlet nozzles 11 is 6; the inner diameter of the second air inlet nozzle ring 13 is 1610mm, and the number of the air inlet nozzles 11 is 6; the inner diameter of the third air inlet nozzle ring 14 is 2067mm, and the number of the air inlet nozzles 11 is 12; the inner diameter of the fourth air inlet nozzle ring 15 is 2067mm, and the number of the air inlet nozzles 11 is 6;
wherein the inner diameters of the intake nozzles 11 on the first intake nozzle ring 12 and the second intake nozzle ring 13 are both 10.5mm, the total cross-sectional areas of the intake nozzles 11 on the two rings of intake nozzle rings being 1038.6 mm, which account for 28.7% of the total cross-sectional areas (3613.8 mm) of all the intake nozzles 11; the total number of pairs of the silicon rods 2 on the three rings of silicon rods 2 is 18 pairs and accounts for 28.6% of the total number of pairs (63 pairs) of the silicon rods 2 by combining the first silicon rod ring 3, the second silicon rod ring 4 and the third silicon rod ring 5, so that the ratio of the sectional area of the air inlet nozzle 11 to the number of pairs of the silicon rods 2 is proper, the ratio of the central tail gas outlet 9 to the logarithmic number of the silicon rods 2 is larger, and the whole gas field is deviated to the central tail gas outlet 9; as shown in fig. 6-7: the second air inlet nozzle ring 13 is an inner and outer boundary designed for the furnace type of the reduction furnace, the inner side is 9 pairs of silicon rods on the third silicon rod ring 5, the outer side is 12 pairs of silicon rods on the fourth silicon rod ring 6, and the air inlet nozzles 11 on the second air inlet nozzle ring 13 provide fresh feed gas for the two circles of silicon rods;
wherein the inner diameters of the inlet nozzles 11 on the third inlet nozzle ring 14 and the fourth inlet nozzle ring 15 are both 13.5mm, the total cross-sectional areas of the inlet nozzles 11 on the two rings of inlet nozzles 11 ring are 2575.2 mm which account for 71.3% of the total cross-sectional area (3613.8 mm) of all the inlet nozzles 11; the total number of pairs of the silicon rods 2 in the three rings of silicon rods 2, which are coupled to the fourth silicon rod ring 6, the fifth silicon rod ring 7, and the sixth silicon rod ring 8, is 45 pairs, and accounts for 71.4% of the total number of pairs (63 pairs) of the silicon rods 2, so that the ratio of the cross-sectional area of the air intake nozzle 11 to the number of pairs of the silicon rods 2 is appropriate.
The central tail gas outlet 9DN200 with precise dimension phi 219.1 × 12.5, effective inner diameter 194.1mm and effective sectional area 29574.7 mm accounts for 40.2% of the total sectional area of all tail gas outlets, which is larger than the total sectional area ratio (28.7%) of the air inlet nozzles 11 on the two circles of the first air inlet nozzle ring 12 and the second air inlet nozzle ring 13, and is also larger than the total logarithmic silicon rod 2 ratio (28.6%) of the silicon rods 2 on the three circles of the first silicon rod ring 3, the second silicon rod ring 4 and the third silicon rod ring 5, and the distribution ratio of the logarithmic silicon rods 2 to the inner and outer circles is larger (wherein, the central tail gas outlet 9 ratio > the air inlet nozzle 11 ratio > the arrangement of the logarithmic silicon rod 2 ratio), therefore, in the fresh raw gas provided by the gas inlet nozzle 11 on the second gas inlet nozzle ring 13, a part of the fresh raw gas diffracts outwards the fourth silicon rod ring 6 and outwards, and a part of the fresh raw gas flows inwards to the central tail gas outlet 9;
the number of the peripheral tail gas outlets 10 is 6, namely 6 peripheral tail gas outlets 10 are arranged on the periphery of the silicon rod 2 ring, so that the uniform distribution and the flow stability of an airflow field are effectively improved; the peripheral exhaust gas outlets 10 Φ 96.7, the 10 sectional areas 44042.7 mm of the 6 peripheral exhaust gas outlets occupy 59.8% of the total sectional area of all the exhaust gas outlets.
Compared with a 40-pair rod reduction furnace in the prior art, the single-furnace yield of the 63-pair rod reduction furnace in the technical scheme can reach 16.5t, and the productivity can be effectively improved by 57%.
Compared with a 60-pair rod (furnace cylinder inner diameter phi 3600) reduction furnace in the prior art, the 63-pair rod reduction furnace (furnace cylinder inner diameter phi 3400) in the technical scheme has smaller floor area and more arranged silicon rods 2, and the number of pairs of silicon rods 2 per square meter is increased from 5.8976 pairs to 6.9425 pairs, namely the arrangement amount of the silicon rods 2 is increased by 17.7%.
Example 4
Based on examples 1-3, this example was further,
the chassis body 1 is supplied with three phases and the silicon rods 2 are phase separated in 3 x 6 pairs, 3 x 6 pairs and 3 x 9 pairs (as shown in fig. 2). The electric circuits are respectively marked as an A phase, a B phase and a C phase, namely three phases are used for supplying power, and each phase of power supply loop is provided with a separate transformer and a power regulating cabinet system.
In the technical scheme, 63 pairs of rods are equally divided according to three phases, each phase of power supply loop needs to supply power to 21 pairs of silicon rods 2, and under the condition, each phase of power supply loop needs larger energy input, and a transformer, a power regulating cabinet and the like cannot be manufactured and realized according to the parameter setting; therefore, the three-phase circuit A, B, C, is subdivided and designated as a1, a2, A3, B1, B2, B3, and C1, C2, C3, respectively, i.e. divided into 9 power supply circuits, each of which only needs to supply a smaller number (6 pairs or 9 pairs) of silicon rods 2.
The first "3 x 6 pairs", namely phase a1, phase B1 and phase C1, consists of the three phases, each 6 pairs powering the silicon rods 2, as shown in fig. 8;
the second "3 x 6 pairs", namely phase a2, phase B2 and phase C2, consists of the three phases, each 6 pairs powering the silicon rods 2, as shown in fig. 9;
a third "3 x 9 pairs", namely a3 phase, B3 phase and C3 phase, consisting of three phases, each phase 9 powering a silicon rod 2, as shown in fig. 10;
the split-phase power supply mode realizes the purposes that the split phases of the electrodes do not span a circle and the same circle has better homothermal property.
Claims (6)
1. A63 pairs of excellent reduction furnace chassis for in polycrystalline silicon production which characterized in that: the silicon rod silicon ingot casting machine comprises a circular chassis body (1) and 63 pairs of silicon rods distributed on the chassis body (1) from inside to outside, wherein the silicon rods (2) are arranged in concentric circles;
the 63 pairs of silicon rods are divided into six annular rings to form six rings of silicon rod rings, namely a first silicon rod ring (3), a second silicon rod ring (4), a third silicon rod ring (5), a fourth silicon rod ring (6), a fifth silicon rod ring (7) and a sixth silicon rod ring (8) from inside to outside in sequence; the number of the silicon rods (2) on each circle of silicon rod ring is a multiple of 3, and the number of the silicon rods (2) is increased from inside to outside circle by circle;
a central tail gas outlet (9) is formed in the circle center of the chassis body (1), and peripheral tail gas outlets (10) which are uniformly distributed are formed between the sixth silicon rod ring (8) and the inner wall of the reduction furnace cylinder;
a first air inlet nozzle ring (12) is arranged between the second silicon rod ring (4) and the third silicon rod ring (5), a second air inlet nozzle ring (13) is arranged between the third silicon rod ring (5) and the fourth silicon rod ring (6), a third air inlet nozzle ring (14) is arranged between the fourth silicon rod ring (6) and the fifth silicon rod ring (7), a fourth air inlet nozzle ring (15) is arranged between the fifth silicon rod ring (7) and the sixth silicon rod ring (8), and air inlet nozzles (11) on any circle of air inlet nozzle rings are uniformly distributed;
the central tail gas outlet (9), the silicon rod pairs, the air inlet nozzles (11) and the peripheral tail gas outlets (10) are arranged on the chassis body (1) in six equal parts to form six fan-shaped areas with included angles of 60 degrees, the arrangement modes of the central tail gas outlet (9), the silicon rod pairs (2), the air inlet nozzles (11) and the peripheral tail gas outlets (10) in each fan-shaped area are in radiation symmetry about the circle center of the chassis body (1), and the edges of the six fan-shaped areas form six air flow channels (16).
2. The 63-pair rod reduction furnace chassis for use in polysilicon production according to claim 1, wherein: 3 pairs of silicon rods are uniformly distributed on the first silicon rod ring (3), 6 pairs of silicon rods are uniformly distributed on the second silicon rod ring (4), 9 pairs of silicon rods are uniformly distributed on the third silicon rod ring (5), 12 pairs of silicon rods are uniformly distributed on the fourth silicon rod ring (6), 15 pairs of silicon rods are uniformly distributed on the fifth silicon rod ring (7), and 18 pairs of silicon rods are uniformly distributed on the sixth silicon rod ring (8).
3. The 63-pair rod reduction furnace chassis for use in the production of polycrystalline silicon according to claim 1 or 2, wherein: the distance between any two adjacent silicon rod rings is 224-229 mm; on the same circle of silicon rod ring, the distance between any two adjacent silicon rods (2) is 240 mm; the distance between the sixth silicon rod ring (8) and the inner wall of the reduction furnace cylinder is 323 mm.
4. The 63-pair rod reduction furnace chassis for use in polysilicon production according to claim 1, wherein: the first air inlet nozzle ring (12) is uniformly distributed with 6 air inlet nozzles (11), the second air inlet nozzle ring (13) is uniformly distributed with 6 air inlet nozzles (11), the third air inlet nozzle ring (14) is uniformly distributed with 12 air inlet nozzles (11), and the fourth air inlet nozzle ring (15) is uniformly distributed with 6 air inlet nozzles (11);
the inner diameters of the air inlet nozzles (11) on the first air inlet nozzle ring (12) and the second air inlet nozzle ring (13) are both 10.5 mm; the inner diameters of the air inlet nozzles (11) on the third air inlet nozzle ring (14) and the fourth air inlet nozzle ring (15) are both 13.5 mm;
the inner diameter of the central tail gas outlet (9) is 194.1mm, the inner diameter of the peripheral tail gas outlets (10) is 96.7mm, and the total number of the peripheral tail gas outlets (10) is 6.
5. The 63-pair rod reduction furnace chassis for use in the production of polycrystalline silicon according to claim 1 or 4, wherein: the inner diameter of the furnace barrel of the reduction furnace is 3400mm, the inner diameter of the first silicon rod ring (3) is 480mm, the inner diameter of the second silicon rod ring (4) is 927mm, the inner diameter of the third silicon rod ring (5) is 1382mm, the inner diameter of the fourth silicon rod ring (6) is 1839mm, the inner diameter of the fifth silicon rod ring (7) is 2296mm, and the inner diameter of the sixth silicon rod ring (8) is 2754 mm;
the inner diameter of the first air inlet nozzle ring (12) is 1155mm, the inner diameter of the second air inlet nozzle ring (13) is 1610mm, the inner diameter of the third air inlet nozzle ring (14) is 2067mm, and the inner diameter of the fourth air inlet nozzle ring (15) is 2067 mm.
6. The 63-pair rod reduction furnace chassis for use in polysilicon production according to claim 1, wherein: the chassis body (1) adopts three-phase power supply, and silicon rods (2) are subjected to phase splitting by 3 pairs of phases 6, 3 pairs of phases 6 and 3 pairs of phases 9.
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| CN202021867941.2U CN213231540U (en) | 2020-09-01 | 2020-09-01 | 63-pair-rod reduction furnace chassis for polycrystalline silicon production |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113073385A (en) * | 2021-03-31 | 2021-07-06 | 昆明理工大学 | Polycrystalline silicon reduction furnace bar distribution method, annular bar distribution polycrystalline silicon and application |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113073385A (en) * | 2021-03-31 | 2021-07-06 | 昆明理工大学 | Polycrystalline silicon reduction furnace bar distribution method, annular bar distribution polycrystalline silicon and application |
| CN113073385B (en) * | 2021-03-31 | 2024-04-09 | 昆明理工大学 | Rod distribution method of polycrystalline silicon reduction furnace, annular rod distribution polycrystalline silicon and application |
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