CN220963375U - Coating and cleaning integrated device and solar cell production system - Google Patents
Coating and cleaning integrated device and solar cell production system Download PDFInfo
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- CN220963375U CN220963375U CN202322456844.4U CN202322456844U CN220963375U CN 220963375 U CN220963375 U CN 220963375U CN 202322456844 U CN202322456844 U CN 202322456844U CN 220963375 U CN220963375 U CN 220963375U
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- 238000004140 cleaning Methods 0.000 title claims abstract description 196
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000011248 coating agent Substances 0.000 title claims abstract description 14
- 238000000576 coating method Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 110
- 230000008569 process Effects 0.000 claims abstract description 108
- 238000007747 plating Methods 0.000 claims abstract description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000010949 copper Substances 0.000 claims abstract description 48
- 229910052802 copper Inorganic materials 0.000 claims abstract description 48
- 238000005530 etching Methods 0.000 claims abstract description 27
- 239000000126 substance Substances 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 134
- 238000010511 deprotection reaction Methods 0.000 claims description 24
- 238000010438 heat treatment Methods 0.000 claims description 20
- 230000007246 mechanism Effects 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- 238000009501 film coating Methods 0.000 abstract description 9
- 239000007888 film coating Substances 0.000 abstract description 9
- 238000001816 cooling Methods 0.000 description 32
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 239000007788 liquid Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000032258 transport Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Electroplating Methods And Accessories (AREA)
Abstract
The utility model provides a film coating and cleaning integrated device and a solar cell production system. The film plating and cleaning integrated device comprises a first process chamber, a second process chamber, a first cleaning chamber and a second cleaning chamber. The first process chamber is used for preparing a transparent conductive layer on the carrier plate and a piece to be coated on the carrier plate, the second process chamber is used for preparing a copper seed layer on the transparent conductive layer on the carrier plate and the transparent conductive layer on the piece to be coated, a back-etching groove is arranged in the first cleaning chamber, and a chemical groove is arranged in the second cleaning chamber. The carrier plate sequentially passes through the first process chamber, the second process chamber, the first cleaning chamber and the second cleaning chamber. The integrated device for coating and cleaning provided by the utility model not only has a coating function, but also can clean the carrier plate.
Description
Technical Field
The utility model relates to the technical field of solar cell production systems, in particular to a film coating and cleaning integrated device and a solar cell production system.
Background
In the production of solar cells, the part to be coated is usually placed on a carrier plate, and a Physical Vapor Deposition (PVD) process is used to produce a transparent conductive layer and a copper seed layer on the part to be coated. However, when the transparent conductive layer and the copper seed layer are prepared on the piece to be coated by adopting the magnetron sputtering method, the magnetron sputtered raw materials can be applied to the carrier plate indiscriminately. Namely, the transparent conductive layer and the copper seed layer are formed on the carrier plate while the transparent conductive layer and the copper seed layer are prepared on the piece to be coated.
The copper seed layer on the carrier plate is easy to combine with boron element in the P-type amorphous silicon film of the piece to be coated to form a covalent bond, so that the doping effect of the P-type amorphous silicon film is influenced, and the conversion efficiency of a solar cell prepared subsequently is influenced. In addition, along with the extension of time, transparent conducting layer and copper seed layer on the carrier plate also can be thicker and thicker, influence the motion of carrier plate to increase the steam in the coating film chamber, after cold trap supporting facility reaches the upper limit, need open the chamber and carry out manual washing carrier plate to the carrier plate, thereby seriously influence production efficiency.
Disclosure of utility model
Accordingly, it is necessary to provide a plating and cleaning integrated apparatus capable of cleaning not only a plating but also a carrier plate.
In addition, there is a need to provide a solar cell production system.
At least one embodiment of the present utility model provides a film plating and cleaning integrated device, including:
The first process chamber is used for preparing a transparent conductive layer on the carrier plate and a piece to be coated on the carrier plate;
The second process chamber is used for preparing a copper seed layer on the transparent conductive layer on the carrier plate and the transparent conductive layer on the piece to be coated;
The first cleaning chamber is internally provided with a back notch; and
The second cleaning chamber is internally provided with a chemical tank;
The carrier plate sequentially passes through the first process chamber, the second process chamber, the etching back groove and the chemical groove, and can circularly move among the first process chamber, the second process chamber, the etching back groove and the chemical groove.
In some embodiments, the plating film cleaning integrated device further comprises:
A first automated apparatus for transporting the carrier plate from the second process chamber to the first cleaning chamber.
In some embodiments, the plating film cleaning integrated device further comprises:
a second automated device disposed between the first cleaning chamber and the second cleaning chamber; and
A first conveyor belt disposed on a side of the second automation device remote from the first cleaning chamber;
The second automation device is used for detecting the thickness of the transparent conductive layer on the carrier plate in the first cleaning cavity and the number of circulation turns of the carrier plate, and judging whether the carrier plate is transported to the second cleaning cavity or the first conveyor belt according to the thickness of the transparent conductive layer on the carrier plate and the number of circulation turns of the carrier plate.
In some embodiments, the plating film cleaning integrated device further comprises:
the protection cavity is arranged on one side, far away from the second cleaning cavity, of the first cleaning cavity and is used for forming a protection layer on the mask surface of the carrier plate; and
The deprotection chamber is arranged on one side, far away from the first cleaning chamber, of the second cleaning chamber, and the deprotection chamber is used for removing the protection layer.
In some embodiments, the plating film cleaning integrated device further comprises:
And the third automation device is arranged between the second cleaning chamber and the deprotection chamber and is used for conveying the carrier plate from the second cleaning chamber and the first conveyor belt to the deprotection chamber.
In some embodiments, the deprotection chamber comprises a heating exposure subchamber and a removal subchamber which are communicated with each other, wherein the heating exposure subchamber is used for carrying out heating exposure on the protection layer, and the removal subchamber is used for removing the protection layer after heating exposure.
In some embodiments, the plating film cleaning integrated device further comprises:
A fourth automated apparatus for transporting the carrier plate from the deprotection chamber to the first process chamber.
In some embodiments, the plating film cleaning integrated device further comprises:
The first buffer chamber is arranged at one side of the first cleaning chamber away from the second cleaning chamber.
In some embodiments, the first cleaning chamber is further provided with a second conveyor belt, a first cleaning tank and a first lifting mechanism, the second conveyor belt is used for transporting the carrier plate, the back etching groove and the first cleaning tank are arranged below the second conveyor belt, the back etching groove is used for removing the copper seed layer on the carrier plate, the first cleaning tank is used for cleaning the carrier plate after removing the copper seed layer, and the first lifting mechanism is used for placing the carrier plate from the second conveyor belt in the back etching groove and the first cleaning tank and placing the carrier plate in the back etching groove and the first cleaning tank on the second conveyor belt.
At least one embodiment of the utility model provides a solar cell production system, which comprises the film coating and cleaning integrated device.
The utility model provides a film coating and cleaning integrated device which comprises a first process chamber, a second process chamber, a first cleaning chamber and a second cleaning chamber, wherein the first process chamber is used for preparing a transparent conductive layer on a carrier plate and a film coating part on the carrier plate, the second process chamber is used for preparing a copper seed layer on the transparent conductive layer on the carrier plate and the transparent conductive layer on the film coating part, a back etching liquid is arranged in a back etching groove in the first cleaning chamber, the back etching liquid can remove the copper seed layer on the carrier plate, chemical liquid is filled in a chemical groove in the second cleaning chamber, the chemical liquid can remove the transparent conductive layer on the carrier plate, and the carrier plate can circularly move among the first process chamber, the second process chamber, the back etching groove and the chemical groove. Namely, the film coating and cleaning integrated device provided by the utility model can not only prepare the transparent conductive layer and the copper seed layer on the to-be-coated piece on the carrier plate, but also remove the transparent conductive layer and the copper seed layer on the carrier plate, so that the covalent bond formed by combining the copper seed layer on the carrier plate with boron element in the P-type amorphous silicon film of the to-be-coated piece is avoided, the doping effect of the P-type amorphous silicon film is ensured, and the conversion efficiency of the subsequently prepared solar cell is improved. In addition, the film plating and cleaning integrated device provided by the utility model can also remove the transparent conductive layer on the carrier plate, so that the transparent conductive layer on the carrier plate is prevented from accumulating and thickening, the movement of the carrier plate is ensured, the water vapor in the process chamber is reduced, the process chamber is prevented from being opened for manually cleaning the carrier plate, and the production efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of a device for cleaning a film coating provided by the utility model;
Fig. 2 is a flowchart of the operation of the integrated plating and cleaning apparatus of fig. 1.
Reference numerals: 100-coating and cleaning integrated device; 10-a first process chamber; 11-a second process chamber; 20-a first cleaning chamber; 201-a second conveyor belt; 202-back-grooving; 203 a first cleaning tank; 21-a second cleaning chamber; 211-a third conveyor belt; 212-a second cleaning tank; 213-chemical tank; 214-a third cleaning tank; 30-a first automation device; 31-a second automation device; 32-a first conveyor belt; 40-protecting the chamber; 401-first protection subchamber; 402-a second protection subchamber; 41-deprotecting the chamber; 411-heating and exposing to separate cavities; 412-removing the subchamber; 50-a third automation device; 51-fourth automation device; 60-a first buffer chamber; 61-a second buffer chamber; 62-a third buffer chamber; 70-a first vacuum chamber; 71-a first connection chamber; 72-a first heating chamber; 73-a first cooling chamber; 74-a second connection chamber; 80-a fifth automation device; 90-a second vacuum chamber; 91-a third connection chamber; 92-a second cooling chamber; 93-a third cooling chamber; 94-fourth connection chamber.
Detailed Description
In order that the utility model may be readily understood, a more complete description of the utility model will be rendered by reference to the appended drawings. Preferred embodiments of the present utility model are shown in the drawings. This utility model may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs. The terminology used herein in the description of the utility model is for the purpose of describing particular embodiments only and is not intended to be limiting of the utility model. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
Referring to fig. 1, at least one embodiment of the present utility model provides a film plating and cleaning integrated apparatus 100, where the film plating and cleaning integrated apparatus 100 includes a first process chamber 10, a second process chamber 11, a first cleaning chamber 20, and a second cleaning chamber 21.
In one embodiment, the first process chamber 10 is used for preparing transparent conductive on a piece to be coated on a carrier plate. In the actual production process, the carrier plate loaded with the piece to be coated is transported into the first process chamber 10, and the transparent conductive layer is prepared in the first process chamber 10 by adopting a magnetron sputtering mode and the like. When the transparent conductive layer is prepared on the piece to be coated by adopting a magnetron sputtering mode and the like, the transparent conductive layer is also formed on the carrier plate.
In one embodiment, the to-be-coated member includes a silicon wafer, a first intrinsic amorphous silicon film and an N-type amorphous silicon film sequentially laminated on one surface of the silicon wafer, and a second intrinsic amorphous silicon film and a P-type amorphous silicon film sequentially laminated on the other surface of the silicon wafer. In one embodiment, the silicon wafer may be a textured silicon wafer.
In one embodiment, the second process chamber 11 is used to prepare a copper seed layer on the transparent conductive layer. In the actual production process, the part to be coated after the transparent conductive layer is coated is transported into the second process chamber 11 through the carrier plate, and the copper seed layer is prepared in the second process chamber 11 by adopting the modes of magnetron sputtering and the like. When the copper seed layer is prepared on the transparent conductive layer on the piece to be coated by adopting a magnetron sputtering mode and the like, the copper seed layer is also formed on the transparent conductive layer on the carrier plate. In an embodiment, the second process chamber 11 and the first process chamber 10 are disposed at the same height.
In one embodiment, the first cleaning chamber 20 is used to remove copper seed layers on the carrier plate. In one embodiment, the first cleaning chamber 20 is provided with a second conveyor 201, a notch 202, a first cleaning tank 203, and a first lifting mechanism (not shown). Wherein the second conveyor 201 is configured to transport the carrier plate. In one embodiment, the undercut 202 and the first cleaning tank 203 are disposed below the second conveyor 201. In one embodiment, the number of the etching back grooves 202 is two, and the two etching back grooves 202 and the first cleaning tank 203 are sequentially arranged and are all disposed below the second conveyor 201. The scribe line 202 is used to remove the copper seed layer on the carrier. In one embodiment, two of the etching back grooves 202 are filled with etching back solutions with different concentrations, so as to more effectively remove the copper seed layer on the carrier plate. The first cleaning tank 203 is used for cleaning the carrier after the copper seed layer is removed. The first lifting mechanism is used for placing the carrier plate from the second conveyor belt 201 into the etching back groove 202 and the first cleaning tank 203, and placing the carrier plate in the etching back groove 202 and the first cleaning tank 203 onto the second conveyor belt 201.
In one embodiment, the second cleaning chamber 21 is used to remove the transparent conductive layer on the carrier plate. In one embodiment, the second cleaning chamber 21 is provided with a third conveyor 211, a second cleaning tank 212, a chemical tank 213, a third cleaning tank 214, and a second lifting mechanism (not shown). Wherein the third conveyor belt 211 is used for transporting the carrier plate. In one embodiment, the second cleaning tank 212, the chemical tank 213 and the third cleaning tank 214 are sequentially arranged below the third conveyor 211. The second cleaning tank 212 is used for cleaning the carrier plate after the copper seeds are removed, the chemical tank 213 is used for removing the transparent conductive layer on the carrier plate, and the third cleaning tank 214 is used for cleaning the carrier plate after the transparent conductive layer is removed. Wherein the second lifting mechanism is used for placing the carrier plate from the third conveyor belt 211 in the second cleaning tank 212, the chemical tank 213 and the third cleaning tank 214, and placing the carrier plates in the second cleaning tank 212, the chemical tank 213 and the third cleaning tank 214 on the third conveyor belt 211. In an embodiment, the second cleaning chamber 21 and the first cleaning chamber 20 are disposed at the same height. In one embodiment, the first process chamber 10 and the second process chamber 11 are located at different heights than the first cleaning chamber 20 and the second cleaning chamber 21. Specifically, the first process chamber 10 and the second process chamber 11 are located at a greater height than the first cleaning chamber 20 and the second cleaning chamber 21.
In one embodiment, the integrated plating and cleaning apparatus 100 further includes a first automation device 30. In one embodiment, the first automation device 30 is disposed on a side of the second process chamber 11 remote from the first process chamber 10 and on a side of the first cleaning chamber 20 remote from the second cleaning chamber 21. The first automation device 30 is configured to separate the to-be-coated piece from the carrier plate after the copper seed layer is prepared, and transport the separated carrier plate from the second process chamber 11 into the first cleaning chamber 20.
In one embodiment, the integrated plating and cleaning apparatus 100 further includes a second automation device 31 and a first conveyor 32. In an embodiment, the second automation device 31 is disposed between the first cleaning chamber 20 and the second cleaning chamber 21. The second automation device 31 is configured to detect a thickness of the transparent conductive layer on the carrier plate and a number of circulation turns of the carrier plate in the first cleaning chamber 20, and determine, according to the thickness of the transparent conductive layer on the carrier plate and the number of circulation turns of the carrier plate, whether to transport the carrier plate in the first cleaning chamber 20 to the second cleaning chamber 21 or to the first conveyor belt 32. Specifically, the second automation device 31 takes the carrier plate out of the first cleaning chamber 20, detects the thickness of the transparent conductive layer on the carrier plate and the number of cycles of the carrier plate, when any one of the thickness of the transparent conductive layer on the carrier plate and the number of cycles of the carrier plate satisfies the cleaning condition, the second automation device 31 places the carrier plate in the second cleaning chamber 21 to remove the transparent conductive layer on the carrier plate in the second cleaning chamber 21, and when neither the thickness of the transparent conductive layer on the carrier plate nor the number of cycles of the carrier plate satisfies the cleaning condition, the second automation device 31 places the carrier plate on the first conveyor belt 32. In one embodiment, the first conveyor belt 32 is disposed on a side of the second automation device 31 remote from the first cleaning chamber 20.
In one embodiment, the integrated plating and cleaning device 100 further includes a protection chamber 40 and a deprotection chamber 41. In one embodiment, the protection chamber 40 is disposed between the first automation device 30 and the first cleaning chamber 20. Wherein the first automation device 30 places the separated carrier plate in a protection chamber 40, and forms a protection layer on a mask surface of the carrier plate in the protection chamber 40. I.e. the protection chamber 40 is used to form a protection layer on the mask surface of the carrier plate. The mask surface is a contact surface of the carrier plate and the piece to be coated, and the flooding surface is subjected to professional grinding and polishing, so that the contact surface is fragile and difficult to clean, and the copper seed layer and the transparent conductive layer on the carrier plate need to be protected before being removed.
In one embodiment, the protection chamber 40 includes a first protection subchamber 401 and a second protection subchamber 402 that are in communication with each other. In an embodiment, the protection layer may be a glue layer. The first protection subchamber 401 is used for longitudinally gluing the mask surface, and the second protection subchamber 402 is used for transversely gluing the mask surface.
In one embodiment, the deprotection chamber 41 is disposed on a side of the second cleaning chamber 21 remote from the first cleaning chamber 20. Wherein the deprotection chamber 41 is used to remove the protective layer. In one embodiment, the deprotection chamber 41 includes a heat exposure subchamber 411 and a removal subchamber 412 in communication with each other. The heating exposure sub-chamber 411 is configured to perform heating exposure on the protective layer, so that a chain reaction occurs on the surface of the adhesive layer, and the state of being unwashed and difficult to remove is changed into the state of being easy to remove. Wherein, the removing cavity 412 is used for removing the protective layer after the heating exposure.
In one embodiment, the integrated plating and cleaning apparatus 100 further includes a third automation device 50. Wherein the third automation device 50 is arranged between the second cleaning chamber 21 and the deprotection chamber 41. Wherein the third automation device 50 is used for transporting the carrier plate from the second cleaning chamber 21 and the first conveyor belt 32 to the deprotection chamber 41.
In one embodiment, the integrated plating and cleaning apparatus 100 further includes a fourth automation device 51. Wherein the fourth automation device 51 is used for transporting the carrier plate from the deprotection chamber 41 to the first process chamber 10. Specifically, the fourth automation device 51 may further place another piece to be coated on the carrier plate taken out from the deprotection chamber 41, and place the carrier plate loaded with the piece to be coated in the first process chamber 10, so as to perform the next coating cleaning cycle.
In one embodiment, the integrated plating and cleaning apparatus 100 further includes a first buffer chamber 60. In one embodiment, the first buffer chamber 60 is disposed between the first automation device 30 and the protection chamber 40, and the first buffer chamber 60 is in communication with the protection chamber 40. The first buffer chamber 60 is configured to buffer the separated carrier plates, so as to avoid excessive carrier plates from being transported into the protection chamber 40, and avoid damage caused by congestion or collision during transportation, so that the production line can operate reliably and stably.
In one embodiment, the integrated plating and cleaning apparatus 100 further includes a second buffer chamber 61. In an embodiment, the second buffer chamber 61 is disposed between the second automation device 31 and the second cleaning chamber 21, and the second buffer chamber 61 and the second cleaning chamber 21 are in communication. The second buffer chamber 61 is used for buffering the carrier plate after the copper seed layer is removed, so that excessive carrier plates are prevented from being transported into the second cleaning chamber 21, and damage caused by congestion or collision in the conveying process is avoided, so that the production line can reliably and stably run.
In one embodiment, the integrated plating and cleaning apparatus 100 further includes a third buffer chamber 62. In an embodiment, the third buffer chamber 62 is disposed between the de-protection layer chamber and the fourth automation device 51, and the third buffer chamber 62 is in communication with the de-protection layer chamber. The third buffer chamber 62 is used for buffering the carrier after the transparent charged layer is removed and buffering the carrier after the transparent conductive layer is not required to be removed.
In one embodiment, the integral plating and cleaning apparatus 100 further includes a first vacuum chamber 70. In an embodiment, the first vacuum chamber 70 is disposed on a side of the first process chamber 10 remote from the second process chamber 11, and the first vacuum chamber 70 is in communication with the first process chamber 10. Wherein, the first vacuum chamber 70 is used for providing a vacuum environment for the workpiece to be coated. In the actual production process, the carrier plate loaded with the workpiece to be coated is placed in the first vacuum chamber 70, so that the workpiece to be coated is in a vacuum environment, and then the carrier plate and the workpiece to be coated in the first vacuum chamber 70 are transported into the first process chamber 10 to prepare the copper seed layer.
In one embodiment, the integrated plating and cleaning device 100 further includes a first connection chamber 71. In one embodiment, the first connection chamber 71 is disposed between the first vacuum chamber 70 and the first process chamber 10, and the first connection chamber 71 is in communication with the first process chamber 10. Wherein the first connection chamber 71 is used to prevent the first process chamber 10 from leaking. In the actual production process, since the physical vapor deposition process is used for preparing the transparent conductive layer in the first process chamber 10, the plasma gas is contained in the first process chamber 10, and the first connection chamber 71 is disposed between the first vacuum chamber 70 and the first process chamber 10, so that the plasma gas in the first process chamber 10 can be prevented from leaking into the first vacuum chamber 70.
In one embodiment, the integral plating and cleaning apparatus 100 further includes a first heating chamber 72. In one embodiment, the first heating chamber 72 is disposed between the first vacuum chamber 70 and the first connection chamber 71, and the first heating chamber 72 is in communication with the first process chamber 10. The first heating chamber 72 is used for heating the workpiece to be coated on the carrier plate.
In one embodiment, the integral plating and cleaning apparatus 100 further includes a first cooling chamber 73. In an embodiment, the first cooling chamber 73 is disposed between the first process chamber 10 and the second process chamber 11, and the first cooling chamber 73 is in communication with the first process chamber 10. The first cooling chamber 73 is used for cooling the to-be-coated member after the transparent conductive layer is prepared, because the first process chamber 10 is a high temperature chamber. In one embodiment, a cold pump or a cryogenic nitrogen reservoir is disposed within the first cooling chamber 73. Wherein the air storage tank can release air to properly empty the first cooling chamber 73, so as to accelerate the cooling speed of the piece to be coated after the transparent conductive layer is prepared.
In one embodiment, the integral plating and cleaning apparatus 100 further includes a second connecting chamber 74. In an embodiment, the second connection chamber 74 is disposed between the first process chamber 10 and the first cooling chamber 73, and the second connection chamber 74 communicates with the first process chamber 10. Wherein the second connecting chamber 74 is used to prevent the first process chamber 10 from leaking gas.
In one embodiment, the integrated plating and cleaning apparatus 100 further includes a fifth automation device 80. In an embodiment, the fifth automation device 80 is disposed between the first cooling chamber 73 and the second process chamber 11. The fifth automation device 80 may take out the to-be-coated member after the transparent conductive layer is prepared from the first cooling chamber 73. It will be appreciated that the fifth automation device 80 may not be used. The part to be coated, after the transparent conductive layer is prepared, is transported from the first cooling chamber 73 into the second process chamber 11 to prepare a copper seed layer.
In one embodiment, the integral plating and cleaning apparatus 100 further includes a second vacuum chamber 90. In an embodiment, the second vacuum chamber 90 is disposed between the fifth automation device 80 and the second process chamber 11, and the second vacuum chamber 90 and the second process chamber 11 are in communication. The second vacuum chamber 90 is used for providing a vacuum environment for the to-be-coated member after the transparent conductive layer is prepared.
In one embodiment, the integral plating and cleaning apparatus 100 further includes a third connecting chamber 91. In an embodiment, the third connection chamber 91 is disposed between the second vacuum chamber 90 and the second process chamber 11, and the third connection chamber 91 is in communication with the second process chamber 11. Wherein the third connection chamber 91 is used to prevent the second process chamber 11 from leaking. In the actual production process, since the physical vapor deposition process is adopted for preparing the copper seed layer in the second process chamber 11, the second process chamber 11 has the plasma gas therein, and the third connection chamber 91 is disposed between the second vacuum chamber 90 and the second process chamber 11, so that the plasma gas in the second process chamber 11 can be prevented from leaking into the second vacuum chamber 90.
In one embodiment, the integral plating and cleaning apparatus 100 further includes a second cooling chamber 92. In an embodiment, the second cooling chamber 92 is disposed between the second vacuum chamber 90 and the third connection chamber 91, and the second cooling chamber 92 is in communication with the second process chamber 11. The second cooling chamber 92 is used for cooling the to-be-coated member after the transparent conductive layer is prepared.
In one embodiment, the integral plating and cleaning apparatus 100 further includes a third cooling chamber 93. In an embodiment, the third cooling chamber 93 is disposed on a side of the second process chamber 11 remote from the first process chamber 10, and the third cooling chamber 93 is in communication with the second process chamber 11. Because the power of the copper seed layer prepared in the second process chamber 11 is high and the heat generated is high, the third cooling chamber 93 is required to cool the to-be-coated member after the copper seed layer is prepared in order to avoid affecting the electrochemical properties of the to-be-coated member after the copper seed layer is prepared.
In one embodiment, the integral plating and cleaning apparatus 100 further includes a fourth connecting chamber 94. In an embodiment, the fourth connection chamber 94 is disposed between the second process chamber 11 and the third cooling chamber 93, and the fourth connection chamber 94 is in communication with the second process chamber 11. Wherein the fourth connection chamber 94 is used to prevent the second process chamber 11 from leaking.
As shown in fig. 1, the integrated plating and cleaning device 100 provided by the utility model has three layers in height: wherein the first vacuum chamber 70, the first heating chamber 72, the first connection chamber 71, the first process chamber 10, the second connection chamber 74, the first cooling chamber 73, the fifth automation device 80, the second vacuum chamber 90, the second cooling chamber 92, the third connection chamber 91, the second process chamber 11, the fourth connection chamber 94 and the third cooling chamber 93 are disposed at the same height and are all disposed at a first layer; the first buffer chamber 60, the protection chamber 40, the first cleaning chamber 20, the second buffer chamber 61, the second cleaning chamber 21, the deprotection chamber 41 and the third buffer chamber 62 are all disposed at the same height and are all disposed at the second layer; the first conveyor belt 32 is disposed on a third layer. In an embodiment, the first automation device 30 and the fourth automation device 51 are disposed on the first layer, the second layer and the third layer. In an embodiment, the second automation device 31 and the third automation device 50 are disposed on the second layer and the third layer. The first layer is arranged above the second layer, and the second layer is arranged above the third layer.
Referring to fig. 1 and 2, the working process of the film plating and cleaning integrated device 100 is as follows: placing the carrier plate loaded with the workpiece to be coated in the first vacuum chamber 70, then transporting the carrier plate and the workpiece to be coated in the first vacuum chamber 70 to the first process chamber 10 after passing through the first heating chamber 72 and the first connecting chamber 71 in turn, preparing a transparent conductive layer on the workpiece to be coated by the first process chamber 10, forming a transparent conductive layer on the carrier plate, sequentially passing through the second connecting chamber 74, the first cooling chamber 73, the fifth automation device 80, the second vacuum chamber 90, the second cooling chamber 92 and the third connecting chamber 91 after preparing a copper seed layer on the transparent conductive layer on the workpiece to be coated by the second process chamber 11, and a copper seed layer is also formed on the carrier plate, the parts to be coated and the carrier plate after the copper seed layer is prepared are transported to the third cooling chamber 93 through the fourth connecting chamber 94 in sequence, the first automation device 30 takes the parts to be coated and the carrier plate after the copper seed layer is prepared out of the third cooling chamber 93, separates the parts to be coated and the carrier plate after the copper seed layer is prepared, then places the separated carrier plate in the first buffer chamber 60, the carrier plate arranged in the first buffer chamber 60 is transported to the first cleaning chamber 20 through the protecting chamber 40, the copper seed layer on the carrier plate is removed in the first cleaning chamber 20, the second automation device takes the carrier plate after the copper seed layer is removed out of the first cleaning chamber 20, detecting the thickness of the transparent conductive layer on the carrier plate and the number of circulation turns of the carrier plate, when any one of the thickness of the transparent conductive layer on the carrier plate and the number of circulation turns of the carrier plate meets the cleaning condition, the second automation device 31 places the carrier plate in the second cleaning chamber 21 so as to remove the transparent conductive layer on the carrier plate in the second cleaning chamber 21, and when the thickness of the transparent conductive layer on the carrier plate and the number of circulation turns of the carrier plate do not meet the cleaning condition, the second automation device 31 places the carrier plate on the first conveyor belt 32; the third automation device 50 transports the carrier plate from the second cleaning chamber 21 and the first conveyor belt 32 into the deprotection chamber 41, the carrier plate in the deprotection chamber 41 is transported into the third buffer chamber 62, the fourth automation device 51 takes the carrier plate out of the third buffer chamber 62, places another piece to be coated on the carrier plate taken out of the third buffer chamber 62, and places the carrier plate loaded with the piece to be coated in the first vacuum chamber 70, so that the next coating cleaning cycle is performed.
At least one embodiment of the present utility model provides a solar cell production system, which includes the integrated coating and cleaning device 100.
The integrated plating and cleaning device 100 provided by the utility model comprises a first process chamber 10, a second process chamber 11, a first cleaning chamber 20 and a second cleaning chamber 21, wherein the first process chamber 10 is used for preparing a transparent conductive layer on a carrier plate and a piece to be plated on the carrier plate, the second process chamber 11 is used for preparing a copper seed layer on the transparent conductive layer on the carrier plate and the transparent conductive layer on the piece to be plated, a back etching liquid is filled in a back etching groove 202 in the first cleaning chamber 20, the back etching liquid can remove the copper seed layer on the carrier plate, a chemical liquid is filled in a chemical groove 213 in the second cleaning chamber 21, the chemical liquid can remove the transparent conductive layer on the carrier plate, and the carrier plate can circularly move among the first process chamber 10, the second process chamber 11, the back etching groove 202 and the chemical groove 213. Namely, the film coating and cleaning integrated device 100 provided by the utility model not only can prepare the transparent conductive layer and the copper seed layer on the to-be-coated piece on the carrier plate, but also can remove the transparent conductive layer and the copper seed layer on the carrier plate, so that covalent bonds formed by combining the copper seed layer on the carrier plate with boron elements in the P-type amorphous silicon film of the to-be-coated piece are avoided, the doping effect of the P-type amorphous silicon film is ensured, and the conversion efficiency of the subsequently prepared solar cell is improved. In addition, the film plating and cleaning integrated device 100 provided by the utility model can remove the transparent conductive layer on the carrier plate, avoid the thicker and thicker transparent conductive layer on the carrier plate, ensure the movement of the carrier plate, reduce the vapor in the process chamber, and avoid the manual cleaning of the carrier plate by opening the process chamber, thereby improving the production efficiency.
In addition, the integrated plating and cleaning device 100 provided by the utility model has the following advantages:
First, the original coating device is changed into the coating and cleaning integrated device 100, so that coating can not be performed, and the carrier plate can be cleaned.
Secondly, the method has no influence on the process, and reduces the workload of staff.
Thirdly, the mask surface on the carrier plate can be effectively protected while the carrier plate is cleaned.
Fourth, the carrier plate can change the transportation route at any time, and the carrier plate is not required to be frequently put on line and put off line, and is washed and maintained by external transmission.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the utility model, which are described in detail and are not to be construed as limiting the scope of the utility model. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the utility model, which are all within the scope of the utility model. Accordingly, the scope of protection of the present utility model is to be determined by the appended claims.
Claims (10)
1. A film plating and cleaning integrated device (100), characterized by comprising:
The first process chamber (10) is used for preparing a transparent conductive layer on a carrier plate and a piece to be coated on the carrier plate;
The second process chamber (11) is used for preparing a copper seed layer on the transparent conductive layer on the carrier plate and the transparent conductive layer on the piece to be coated;
A first cleaning chamber (20), wherein a back notch (202) is arranged in the first cleaning chamber (20); and
A second cleaning chamber (21), wherein a chemical tank (213) is arranged in the second cleaning chamber (21);
The carrier plate sequentially passes through the first process chamber (10), the second process chamber (11), the back etching groove (202) and the chemical groove (213), and can circularly move among the first process chamber (10), the second process chamber (11), the back etching groove (202) and the chemical groove (213).
2. The integrated plating and cleaning device (100) according to claim 1, wherein the integrated plating and cleaning device (100) further comprises:
-a first automation device (30), the first automation device (30) being adapted to transport the carrier plate from the second process chamber (11) to the first cleaning chamber (20).
3. The integrated plating and cleaning device (100) according to claim 1, wherein the integrated plating and cleaning device (100) further comprises:
-a second automation device (31), the second automation device (31) being arranged between the first washing chamber (20) and the second washing chamber (21); and
-A first conveyor belt (32), the first conveyor belt (32) being arranged at a side of the second automation device (31) remote from the first washing chamber (20);
The second automation device (31) is used for detecting the thickness of the transparent conductive layer on the carrier plate and the number of circulation turns of the carrier plate in the first cleaning chamber (20), and judging whether the carrier plate is transported to the second cleaning chamber (21) or the first conveyor belt (32) according to the thickness of the transparent conductive layer on the carrier plate and the number of circulation turns of the carrier plate.
4. The integrated plating and cleaning device (100) according to claim 3, wherein the integrated plating and cleaning device (100) further comprises:
a protection chamber (40), wherein the protection chamber (40) is arranged at one side of the first cleaning chamber (20) away from the second cleaning chamber (21), and the protection chamber (40) is used for forming a protection layer on the mask surface of the carrier plate; and
A deprotection chamber (41), the deprotection chamber (41) being arranged at a side of the second cleaning chamber (21) remote from the first cleaning chamber (20), the deprotection chamber (41) being used to remove the protective layer.
5. The integrated plating and cleaning device (100) according to claim 4, wherein the integrated plating and cleaning device (100) further comprises:
-a third automation device (50), said third automation device (50) being arranged between said second washing chamber (21) and said deprotection chamber (41), said third automation device (50) being adapted to transport said carrier plate from said second washing chamber (21) and said first conveyor belt (32) to said deprotection chamber (41).
6. The integrated coating and cleaning apparatus (100) according to claim 4, wherein the deprotection chamber (41) comprises a heating exposure chamber (411) and a removal chamber (412) which are communicated with each other, the heating exposure chamber (411) is used for performing heating exposure on the protective layer, and the removal chamber (412) is used for removing the protective layer after the heating exposure.
7. The integrated plating and cleaning device (100) according to claim 4, wherein the integrated plating and cleaning device (100) further comprises:
-a fourth automation device (51), the fourth automation device (51) being for transporting the carrier plate from the deprotection chamber (41) to the first process chamber (10).
8. The integrated plating and cleaning device (100) according to any of the claims 1 to 7, wherein the integrated plating and cleaning device (100) further comprises:
a first buffer chamber (60), the first buffer chamber (60) being arranged on a side of the first cleaning chamber (20) remote from the second cleaning chamber (21).
9. The integrated coating and cleaning device (100) according to any one of claims 1 to 7, wherein a second conveyor belt (201), a first cleaning tank (203) and a first lifting mechanism are further provided in the first cleaning chamber (20), the second conveyor belt (201) is used for transporting the carrier plate, the back-etching tank (202) and the first cleaning tank (203) are provided below the second conveyor belt (201), the back-etching tank (202) is used for removing a copper seed layer on the carrier plate, the first cleaning tank (203) is used for cleaning the carrier plate after the copper seed layer is removed, and the first lifting mechanism is used for placing the carrier plate from the second conveyor belt (201) into the back-etching tank (202) and the first cleaning tank (203) and placing the carrier plate in the back-etching tank (202) and the first cleaning tank (203) onto the second conveyor belt (201).
10. A solar cell production system, characterized by comprising a film plating and cleaning integrated device (100) according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322456844.4U CN220963375U (en) | 2023-09-08 | 2023-09-08 | Coating and cleaning integrated device and solar cell production system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322456844.4U CN220963375U (en) | 2023-09-08 | 2023-09-08 | Coating and cleaning integrated device and solar cell production system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220963375U true CN220963375U (en) | 2024-05-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322456844.4U Active CN220963375U (en) | 2023-09-08 | 2023-09-08 | Coating and cleaning integrated device and solar cell production system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220963375U (en) |
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2023
- 2023-09-08 CN CN202322456844.4U patent/CN220963375U/en active Active
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