CN220952197U - Heating furnace of crystal silicon material cold crushing and heating equipment - Google Patents

Abstract

The utility model relates to the technical field of heating and cold crushing treatment of crystalline silicon materials, in particular to a heating furnace of a crystalline silicon material cold crushing heating device, which comprises the following components: the furnace body is internally provided with a heating channel, and a furnace lining structure, an upper heating component and a lower heating component are arranged in the heating channel; a feeding part for lifting the crystal silicon material and transferring the crystal silicon material to a transmission part; the conveying part is used for receiving the crystal silicon material and conveying the crystal silicon material into the furnace body, and comprises a supporting table, wherein a concave-convex structure is arranged on the supporting table, and the supporting table is driven by a horizontal conveying mechanism and forms circulating conveying; the blanking part is arranged at the tail end of the transmission part; and the soaking cooling part is matched with the blanking part and used for receiving the crystalline silicon material, soaking the crystalline silicon material into a cold soaking pool for cold crushing, and lifting and conveying the crystalline silicon material after the cold crushing is finished. The utility model improves the structure of the supporting table, can be matched with the transportation of the crystal silicon materials with more sizes, and realizes the heating and cooling of the crystal silicon materials, thereby reducing the loss of the crystal silicon materials, improving the utilization rate of the materials and obviously reducing the production cost after long-term use.

Description

Heating furnace of crystal silicon material cold crushing and heating equipment

Technical Field

The utility model relates to the technical field of heating and cold crushing treatment of crystalline silicon materials, in particular to a heating furnace of a crystalline silicon material cold crushing heating device.

Background

The crystalline silicon material is an important raw material in industrial production, the processing treatment of the crystalline silicon material needs to have strict environmental control, and in the crushing process of crystalline silicon blocks, the introduction of impurity ions is strictly prevented, and the generation of fine crystalline silicon material and powder in the crushing process is reduced as much as possible.

The currently adopted heating and cooling process equipment for the crystalline silicon material realizes continuous heating and cooling treatment of the crystalline silicon material with fixed shape and specification. However, the limitation of the conveying mechanism of the heating furnace is only applicable to the treatment of round bars and square bars with certain length, and a large amount of cake-shaped, cone-shaped, crescent-shaped head and tail materials and side leather materials are generated in the production process of the crystalline silicon. Because of no suitable high-temperature furnace carrying mode, about 30% of the crystalline silicon materials in the production of the crystalline silicon cannot be processed by adopting a continuous cold crushing process, and only a traditional manual crushing mode can be adopted. The labor intensity is high, the working environment is poor, the amount of low-medium small powder is large, and the crystalline silicon material is easy to be polluted.

Therefore, the current heating and cooling crushing treatment mode of the crystalline silicon material still has a need for improvement so as to enlarge the application range of the treatment of the crystalline silicon material, further improve the crushing automation degree of the crystalline silicon material in the crystalline silicon industry, further improve the yield of the high-quality crystalline silicon material and reduce the consumption of raw materials. Therefore, a more reasonable technical scheme is required to be provided, and the technical problems in the prior art are solved.

Disclosure of utility model

At least to overcome one of the defects mentioned above, the utility model provides a heating furnace of a crystal silicon material cold crushing heating device, which can convey and process crystal silicon materials with various sizes by improving the structure of a supporting table, improves the utilization rate of materials, reduces the loss, and further can reduce the overall operation cost.

In order to achieve the above purpose, the heating furnace disclosed by the utility model can adopt the following technical scheme:

a heating furnace of a crystal silicon material cold crushing and heating device, comprising:

The furnace body is internally provided with a heating channel, and the crystal silicon material is heated in the heating channel; a furnace lining structure is arranged in the heating channel, and an upper heating component and a lower heating component for heating are also arranged in the heating channel; the positive pressure device is also arranged for conveying gas towards the heating channel;

The feeding part is used for lifting the crystalline silicon material and transferring the crystalline silicon material to the transmission part:

The conveying part is used for receiving the crystalline silicon material and continuously conveying the crystalline silicon material into the furnace body, the conveying part comprises a supporting table for supporting the crystalline silicon material, a concave-convex structure for keeping the position of the crystalline silicon material stable is arranged on the supporting table, and the supporting table is driven by the horizontal conveying mechanism and forms circulating conveying on a horizontal plane;

the blanking part is arranged at the tail end of the transmission part and is used for receiving the crystal silicon material;

and the soaking cooling part is matched with the blanking part and used for receiving the crystalline silicon material, soaking the crystalline silicon material into a cold soaking pool for cooling, and lifting and conveying the crystalline silicon material after cooling.

The heating furnace disclosed by the above is used for heating the crystalline silicon material in the heating channel, the normal-temperature crystalline silicon material is conveyed to the feeding port of the heating channel through the feeding part and is conveyed to the conveying part, the conveying part is used for conveying the crystalline silicon material into the heating channel and heating the crystalline silicon material to a preset temperature and conveying the crystalline silicon material out from the tail part of the furnace body, the discharging part is conveyed to the soaking part to realize cooling treatment of the crystalline silicon material during conveying, huge structural stress is generated in the crystalline silicon material after cooling treatment, and the high-quality crystalline silicon material with moderate and small particle size distribution can be obtained through subsequent simple treatment. The supporting platforms are used in a pair combination way, the concave-convex limiting structure is arranged on the supporting platforms, and the crystal silicon material and the supporting platforms do not move relatively in the conveying process in the furnace, so that the conveying of the crystal silicon material with various structural shapes such as bar materials, block materials, edge leather materials and the like can be realized, and the application range of the water crushing process is greatly improved.

Furthermore, in the utility model, part of residues can be generated in the heating channel, cleaning is needed to ensure cleaning in the heating channel, thereby ensuring the heating reliability, avoiding the situation of denaturation of the crystal silicon material, and the structure for cleaning the residues is not limited only, and one of the feasible choices is optimized and proposed here: the bottom of the heating channel is provided with a slag discharging structure. When the scheme is adopted, the slag discharging structure can adopt a slag discharging channel arranged on the furnace body, a valve structure is arranged at the slag discharging channel opening to seal the slag discharging channel when heating, and the slag discharging channel can be opened to discharge slag after heating is finished. In some technical schemes, a plurality of slag discharging channels can be arranged at intervals along the conveying direction of the crystal silicon material, so that slag is discharged at a plurality of positions in the heating channel, and the slag discharging efficiency is improved.

Furthermore, in the utility model, the feeding part and the discharging part are matched with the transmission part to realize the transportation of the crystalline silicon material, and the matched structure can take various forms, which are not limited solely, and the utility model optimizes and proposes one of the possible choices: the feeding part and the discharging part comprise a first lifting mechanism, a carrying part is arranged on the first lifting mechanism, and a placing part for placing the crystal silicon material is arranged on the carrying part; the first lifting mechanism is used for driving the carrying part to ascend or descend, the first rotating mechanism drives the carrying part to rotate so as to realize rotation transposition, the carrying part is aligned with the supporting table after rotation transposition, and the first lifting mechanism descends so as to place the crystalline silicon material on the supporting table or the cold soaking part. When the scheme is adopted, the first lifting mechanism can adopt structures such as a lifting rod and a lifting frame, the first rotating mechanism can be arranged below the first lifting mechanism and drives the whole first lifting mechanism to rotate, and meanwhile, the carrying part rotates along with the first lifting mechanism and realizes 180-degree position switching; in other embodiments, the first rotation mechanism may be disposed on top of the first lifting mechanism, and may be used to drive the carrying portion to rotate to perform the indexing. The first rotating mechanism can be driven by adopting a motor matched with a transmission gear, and adopts a sleeve structure or a turntable structure as a rotating seat for driving the first lifting mechanism or the carrying part to rotate.

Further, in the present utility model, when the feeding portion places the crystalline silicon material into the conveying portion, the material needs to be stably connected to avoid rolling off, and the material can be specifically realized through various structures, and optimization is performed and one of the possible choices is provided herein: the feeding part also comprises an objective table for placing the crystalline silicon material, the carrying part is provided with an open slot, the width of the objective table is smaller than that of the open slot, the objective table is positioned at the inner side of the open slot, and when the carrying part ascends from the lower part of the objective table, the crystalline silicon material on the objective table is picked up and continuously ascended; the width of the supporting table is smaller than that of the open slot, and the placement of the crystal silicon material is completed when the carrying part is aligned with the supporting table and is lowered below the supporting table, or the placement of the crystal silicon material is completed when the carrying part is aligned with the cold soaking part and is lowered below the cold soaking part. When the scheme is adopted, the supporting table can be provided with a structure which is convenient for positioning the crystal silicon material, such as a positioning groove structure and the like; and the corresponding positioning circular arc or positioning bulge and other structures are arranged on the opening groove so as to ensure that the crystal silicon material is kept stable in the carrying and transferring process.

Further, the horizontal conveying mechanism conveys the crystalline silicon material into the furnace body and out of the furnace body from a single direction, and the horizontal conveying mechanism forms a circulating conveying structure, which can be realized by various structures, and is not limited solely, and is optimized and one of the possible choices is provided herein: the horizontal conveying mechanism comprises a circulating rail, and a plurality of supporting frames used for connecting a supporting table are arranged on the circulating rail in a matched mode; the device also comprises a driving assembly, and the driving assembly drives the supporting frame to carry along the circulating track in a circulating way. When the scheme is adopted, the supporting frame is matched with the circulating rail through the travelling wheels and moves along the circulating rail; the drive assembly forms a closed endless traction in the horizontal direction, and the support frame also forms a closed endless travel path.

Still further, the structure of the drive assembly is not limited solely, and is optimized and one possible option is presented herein: the driving assembly comprises at least two driving shafts, a rotating wheel is arranged on one driving shaft, a driving wheel is arranged on the other driving shaft, a driven wheel is arranged on the other driving shaft, a transmission part is connected between the driving wheel and the driven wheel, and the supporting frame is connected with the transmission part and synchronously moves along with the transmission part. When the scheme is adopted, the transmission part can adopt a transmission chain or a transmission belt, the driving shaft is longitudinally arranged, a plurality of rotating wheels can be longitudinally arranged on the driving shaft and synchronously transmit, and the transmission stability can be improved.

Still further, in some embodiments, the arrangement of the horizontal conveying mechanism is not limited solely, and in the present utility model, optimization is performed and one of possible choices is proposed: the horizontal conveying mechanisms are arranged in mirror symmetry on two sides of the advancing direction of the crystal silicon material. When the scheme is adopted, the horizontal conveying mechanisms on the two sides synchronously run and enable the supporting tables to synchronously advance in pairs, so that the crystal silicon materials can be conveyed more stably, the conveying efficiency is improved, and the device is suitable for processing the crystal silicon materials with more specifications and sizes.

Further, in the present utility model, the structure of the support table can be optimized and one of the possible options is presented: the supporting table comprises a supporting surface for placing the crystal silicon material, the concave-convex structure is positioned on the supporting surface, and the concave-convex structure comprises V-shaped concave-convex grooves. When adopting this scheme, the width of V-arrangement tongue-and-groove is less than the width of holding surface, and is more stable when placing the disc material, also can realize compatible when placing residual material or thin garrulous material simultaneously, especially when placing thin garrulous material, accessible sets up and holds tray etc. and as the container to hold the fine and broken bits.

Further, the gas environment inside the furnace body affects the property of the crystalline silicon material in the heating process, so that in order to avoid the chemical reaction affecting the property of the material, the gas environment needs to be controlled, and the gas environment is optimized and one of the possible choices is provided: the furnace body comprises a mounting cavity for mounting the horizontal conveying mechanism, a sealing ring groove is arranged in the mounting cavity, the sealing ring groove is arranged along the advancing path of the supporting frame in an extending mode and is positioned at the outer side of the driving assembly, a sealing plate which extends downwards into the sealing ring groove and is immersed by sealing liquid is arranged at the top of the mounting cavity, and the sealing ring groove and the sealing plate form a sealing isolation structure to prevent gas at the side of the driving assembly from entering a hearth in the furnace body; one end of the supporting frame is connected to the driving assembly, and the other end of the supporting frame enters from the inner side of the sealing ring groove and protrudes out of the outer side of the sealing ring groove after being bent and wound below the sealing plate. When the scheme is adopted, air isolation is realized through the cooperation of the sealing ring groove and the sealing plate, and the supporting frame penetrates through the sealing structure formed by the sealing ring groove and the sealing plate to realize normal operation, so that the sealing requirement can be met only by ensuring the sealing liquid quantity in the sealing ring groove, and the oxidation of the crystal silicon material caused by the fact that external air enters into a furnace body hearth from a conveying part is avoided.

Further, the cold soaking part carries out quenching cooling on the heated crystalline silicon material, so that cracks are formed inside the crystalline silicon material due to structural stress, thereby being convenient for processing to obtain materials with smaller granularity, the structure of the cold soaking part can be realized by adopting various schemes, the scheme is not limited only, and the structure is optimized and one of the feasible choices is provided: the cold soaking part comprises a second lifting mechanism, the second lifting mechanism is connected with at least two cold soaking tables for placing crystal silicon materials, and the second lifting mechanism is also connected with a second rotating mechanism and is driven to shift and rotate by the second rotating mechanism. When the scheme is adopted, the second lifting mechanism is used for carrying the crystal silicon material, the crystal silicon material enters the cold soaking pool through lifting and enters the cold soaking pool for quenching treatment, and the cooled crystal silicon material is rotated and transposed to an outward conveying position along with the cold soaking table, and is lifted and matched with the outward conveying.

Still further, in the process of blanking and quenching, the air environment needs to be kept suitable, so that the denaturation caused by the oxidation reaction of the crystalline silicon material still in a high-temperature state and oxygen is avoided, and the optimization is carried out and one of the feasible choices is provided: the butt joint of the blanking part and the cold soaking part is provided with a sealing box, one port of the sealing box is communicated to the furnace body, and the other port of the sealing box is communicated to the cold soaking pool and is immersed in the cold soaking liquid. When the scheme is adopted, the furnace body, the sealing box and the cold soaking pool are communicated to form a sealing space, and the transportation and cooling of the crystal silicon material are realized.

Compared with the prior art, the technical scheme disclosed by the utility model has the following partial beneficial effects:

According to the utility model, through improving the conveying structure on the furnace body, especially improving the structure of the supporting table, more sizes of crystal silicon materials can be conveyed in a matched manner, and the heating and cooling crushing processes of different sizes of crystal silicon materials are realized, so that the loss of the crystal silicon materials is reduced, the utilization rate of materials is improved, and the production cost can be obviously reduced after long-term use.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present utility model and therefore should not be considered limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic sectional view of a furnace body and an enlarged schematic partial view of the furnace body.

Fig. 2 is a schematic structural view of the loading part of the furnace body, and the state is that the carrying part starts to support the crystalline silicon material.

Fig. 3 is a schematic structural view of the furnace body feeding part, and the state is that the carrying part supports the crystal silicon material to rise.

Fig. 4 is a schematic structural view of a loading part of the furnace body, and the state is that a carrying part supports a crystal silicon material to rotate and change positions.

Fig. 5 is a schematic view of the furnace body feeding section, in which the carrier section descends to transfer the silicon material to the transfer section and returns to its original position.

Fig. 6 is a schematic view of the structure of the furnace blanking portion, in which the carrier portion starts to rise to transfer the crystalline silicon material from the transfer portion.

FIG. 7 is a schematic diagram of the blanking portion of the furnace body, in which the carrying portion drives the crystal silicon material to rotate to change positions.

Fig. 8 is a schematic view of the structure of the furnace blanking portion, in which the cold soaking table is raised and the crystalline silicon material is transferred from the carrying portion.

Fig. 9 is a schematic view of the structure of the furnace blanking portion in a state where the cold soaking table descends and the crystalline silicon material is sent into the cold soaking tank.

FIG. 10 is a schematic view of the furnace blanking portion, in which the cold soaking table drives the crystal silicon material to rotate and shift and rise to the output position, and the crystal silicon material is newly received from the carrying portion.

In the above figures, the meaning of each symbol is:

1. A furnace body; 101. a mounting cavity; 2. a support table; 3. a crystalline silicon material; 4. a drive shaft; 5. a rotating wheel; 6. a support frame; 7. a sealing plate; 8. sealing ring grooves; 9. a walking wheel; 10. a circulation track; 11. a first lifting mechanism; 12. a carrying part; 1201. a placement unit; 13. an objective table; 14. a second lifting mechanism; 15. a cold soaking material table; 16. a cold soaking pool; 17. and (5) sealing the box.

Detailed Description

The utility model is further illustrated by the following description of specific embodiments in conjunction with the accompanying drawings.

Aiming at the situations that the materials existing in the prior art are single in utilization and cannot be conveyed and processed, so that the materials are large in loss and high in cost, the following embodiments are optimized and the defects existing in the prior art are overcome.

Examples

As shown in fig. 1, the embodiment provides a heating furnace of a cooling and crushing heating device for crystalline silicon material, which is mainly used for improving the processing utilization rate of the crystalline silicon material 3 and reducing the loss, thereby reducing the use cost of the crystalline silicon material 3. One of the structures comprises:

the furnace body 1, the furnace body 1 is formed with a heating channel, and the crystal silicon material 3 is heated in the heating channel; a furnace lining structure is arranged in the heating channel, an upper heating component and a lower heating component for heating are arranged, and a slag discharging structure is also arranged; positive pressure means are also provided to deliver gas into the heating tunnel.

Preferably, the furnace body 1 is in a linear structure, and the upper heating component and the lower heating component comprise a plurality of electric heating rods which are uniformly arranged at intervals along the extending direction of the heating channel; the positive pressure device including the air inlet that communicates to the heating passageway, the air inlet passes through air feed passageway intercommunication air supply, adopts the nitrogen gas air supply in this embodiment, when letting in nitrogen gas to the heating passageway, the inside atmospheric pressure of heating passageway is higher than the outside atmospheric pressure of heating passageway to can be with the inside gaseous outside extrusion of heating passageway, and then avoid the air in the atmosphere to enter into in the heating passageway, can ensure the gaseous environment in the heating passageway reliably.

As shown in fig. 2 to 5, the feeding section is used for lifting the crystalline silicon material 3 and transferring the crystalline silicon material 3 to the conveying section.

The conveying part is used for receiving the crystalline silicon material 3 and continuously conveying the crystalline silicon material 3 into the furnace body 1, the conveying part comprises a supporting table 2 used for supporting the crystalline silicon material 3, a concave-convex structure used for keeping the position of the crystalline silicon material 3 stable is arranged on the supporting table 2, and the supporting table 2 is driven by a horizontal conveying mechanism and forms circular conveying on a horizontal plane;

As shown in fig. 6 to 10, a blanking portion is disposed at the end of the transmission portion and is used for receiving the crystalline silicon material 3;

And the soaking cooling part is matched with the blanking part and used for receiving the crystalline silicon material 3, soaking the crystalline silicon material 3 into the cold soaking tank 16 for cooling, and lifting and conveying the crystalline silicon material 3 after cooling.

In the crystal silicon material heating furnace disclosed by the embodiment, the crystal silicon material is heated in the heating channel, the normal-temperature crystal silicon material 3 is conveyed to the feeding port of the furnace body 1 through the feeding part and conveyed to the conveying part, the conveying part conveys the crystal silicon material 3 into the furnace body 1 and heats the crystal silicon material to a preset temperature and conveys the crystal silicon material out from the tail part of the furnace body 1, the crystal silicon material is conveyed to the soaking part by the discharging part during conveying so as to realize the cooling treatment of the crystal silicon material 3, cracks are generated in the crystal silicon material 3 after the cooling treatment due to structural stress, and the crystal silicon material 3 with smaller granularity can be achieved through subsequent treatment. The concave-convex structure is arranged on the supporting table 2, so that bars or block materials, residual materials and the like can be conveyed, and the use compatibility is improved.

Preferably, a positive pressure air supply structure is formed in the furnace body 1, and inert gases such as nitrogen are conveyed into the furnace body 1, so that the air pressure in the furnace body 1 is higher than the external air pressure, and the air flows outwards from the feeding end of the furnace body 1, thereby avoiding that air at the feeding end enters and affects the gas environment in the furnace body 1.

In this embodiment, part of residues can be generated in the heating channel, cleaning is needed to ensure cleaning in the heating channel, so that heating reliability is ensured, the situation of denaturation of the crystal silicon material is avoided, the structure for cleaning the residues is not limited only, and the cleaning device is optimized and one of the feasible choices is adopted: the bottom of the heating channel is provided with a slag discharging structure. When the scheme is adopted, the slag discharging structure can adopt the way that a slag discharging channel is arranged on the side face of the furnace wall of the furnace body, a valve structure is arranged at the slag discharging channel opening to seal the slag discharging channel during heating, and the slag discharging channel can be opened to discharge slag after heating is finished. In some technical schemes, a plurality of slag discharging channels can be arranged at intervals along the conveying direction of the crystal silicon material, so that slag is discharged at a plurality of positions in the heating channel, and the slag discharging efficiency is improved.

In this embodiment, the feeding portion and the discharging portion are both matched with the transmission portion to realize the conveyance of the crystalline silicon material 3, and the matching structure may take various forms, which are not limited solely, and this embodiment optimizes and adopts one of the possible choices: the feeding part and the discharging part comprise a first lifting mechanism 11, a carrying part 12 is arranged on the first lifting mechanism 11, and a placing part 1201 for placing the crystal silicon material 3 is arranged on the carrying part 12; the first lifting mechanism 11 is used for driving the carrying part 12 to lift or descend, and the first rotating mechanism drives the carrying part 12 to rotate to realize rotation transposition, after the carrying part 12 rotates transposition, the crystalline silicon material 3 is aligned with the supporting table 2, and the first lifting mechanism 11 descends to place the crystalline silicon material 3 on the supporting table 2 or the cold soaking part. When the scheme is adopted, the first lifting mechanism 11 can adopt structures such as lifting rods and lifting frames, the first rotating mechanism can be arranged below the first lifting mechanism 11 and drives the whole first lifting mechanism 11 to rotate, and meanwhile, the carrying part 12 rotates along with the first lifting mechanism 11 and realizes 180-degree position switching; in other embodiments, the first rotation mechanism may be disposed on top of the first lifting mechanism 11, and used to drive the carrying portion 12 to rotate to perform transposition. The first rotating mechanism can be driven by a motor matched with a transmission gear, and a sleeve structure or a turntable structure is used as a rotating seat for driving the first lifting mechanism 11 or the carrying part 12 to rotate.

In this embodiment, when the feeding portion places the crystalline silicon material 3 into the conveying portion, the material needs to be stably connected to avoid rolling off, and the material can be specifically realized through various structures, and this embodiment is optimized and one of the possible choices is adopted: the feeding part further comprises an objective table 13 for placing the crystal silicon material 3, the carrying part 12 is provided with an open slot, the width of the objective table 13 is smaller than that of the open slot, the objective table 13 is positioned at the inner side of the open slot, and when the carrying part 12 ascends from the lower part of the objective table 13, the crystal silicon material 3 on the objective table 13 is picked up and continuously ascended; the width of the supporting table 2 is smaller than the width of the open slot, and the placement of the crystalline silicon material 3 is completed when the carrying part 12 is aligned with the supporting table 2 and lowered below the supporting table, or the placement of the crystalline silicon material 3 is completed when the carrying part 12 is aligned with the cold dip part and lowered below the cold dip part. When the scheme is adopted, the supporting table 2 can be also provided with a structure which is convenient for positioning the crystal silicon material 3, such as a positioning groove structure and the like; and the corresponding positioning circular arc or positioning bulge and other structures are arranged on the opening groove so that the crystal silicon material 3 can be stably maintained in the carrying and transferring process.

The horizontal conveying mechanism conveys the crystalline silicon material 3 into the furnace body 1 and out of the furnace body 1 from a single direction, but the horizontal conveying mechanism forms a circulating conveying structure, which can be realized by various structures, and is not limited solely, and the embodiment optimizes and adopts one of the feasible choices: the horizontal conveying mechanism comprises a circulating rail 10, and a plurality of supporting frames 6 for connecting the supporting table 2 are arranged on the circulating rail 10 in a matched mode; the device also comprises a driving assembly, and the driving assembly drives the supporting frame 6 to circularly convey along the circulating track 10. With such a scheme, the supporting frame 6 is matched with the circulating rail 10 through the travelling wheels 9 and travels along the circulating rail 10; the drive assembly forms a closed endless traction in the horizontal direction, and the support frame 6 also forms a closed endless travel path.

The structure of the drive assembly is not limited to only one, and this embodiment is optimized and adopts one of the possible options: the driving assembly comprises at least two driving shafts 4, a rotating wheel 5 is arranged on one driving shaft 4, a driving wheel is arranged on the other driving shaft 4, a driving part is connected between the driving wheel and the driven wheel, and the supporting frame 6 is connected with the driving part and synchronously moves along with the driving part. When the scheme is adopted, the transmission part can adopt a transmission chain or a transmission belt, the driving shaft 4 is longitudinally arranged, a plurality of rotating wheels 5 can be longitudinally arranged on the driving shaft 4 and synchronously transmit, and the transmission stability can be improved.

In some embodiments, the arrangement of the horizontal conveying mechanism is not limited to only one, and in this embodiment, the horizontal conveying mechanism is optimized and one of the possible choices is adopted: the horizontal conveying mechanisms are arranged in mirror symmetry on two sides of the advancing direction of the crystalline silicon material 3. When the scheme is adopted, the horizontal conveying mechanisms at the two sides synchronously operate and enable the supporting platforms 2 to synchronously advance in pairs one by one, so that the crystal silicon material can be conveyed more stably, the conveying efficiency is improved, and the device is suitable for processing the crystal silicon materials with more specifications and sizes

In this embodiment, the structure of the support table 2 can be optimized and one of the possible options is adopted: the supporting table 2 comprises a supporting surface for placing the crystalline silicon material 3, the concave-convex structure is positioned on the supporting surface, and the concave-convex structure comprises V-shaped concave-convex grooves. When adopting this scheme, the width of V-arrangement tongue-and-groove is less than the width of holding surface, and is more stable when placing the disc material, also can realize compatible when placing residual material or thin garrulous material simultaneously, especially when placing thin garrulous material, accessible sets up and holds tray etc. and as the container to hold the fine and broken bits.

The gas environment inside the furnace body 1 can influence the property of the crystalline silicon material 3 in the heating process, and in order to avoid the property of affecting the material by chemical reaction, the gas environment needs to be controlled, and the embodiment is optimized and one of the feasible choices is adopted: the furnace body 1 comprises a mounting cavity 101 for mounting a horizontal conveying mechanism, a sealing ring groove 8 is arranged in the mounting cavity 101, the sealing ring groove 8 is arranged along the advancing path of a supporting frame 6 and is positioned at the outer side of a driving assembly, a sealing plate 7 which downwards extends into the sealing ring groove 8 and is immersed by sealing liquid is arranged at the top of the mounting cavity 101, and the sealing ring groove 8 and the sealing plate 7 form a sealing isolation structure to prevent gas at the side of the driving assembly from entering the hearth of the furnace body 1; one end of the supporting frame 6 is connected to the driving assembly, and the other end enters from the inner side of the sealing ring groove 8 and protrudes from the outer side of the sealing ring groove 8 after being bent and wound below the sealing plate 7. When adopting such scheme, realized that the air is isolated through the cooperation of seal ring groove 8 and closing plate 7, and supporting rack 6 has passed seal ring groove 8 and the seal structure that closing plate 7 formed and can realize normal operating, only need guarantee the sealed liquid measure in the seal ring groove 8, can satisfy the sealing demand to avoid outside air to enter into the oxidation that causes crystalline silicon material 3 in the furnace of furnace body 1 from the transport portion.

Preferably, the support frame 6 is configured in this embodiment as a reciprocally wound S-shaped structure.

The cold soaking part carries out quenching cooling on the heated crystalline silicon material 3 to enable cracks to be formed inside the crystalline silicon material 3, so that materials with smaller granularity can be obtained through treatment conveniently, the structure of the cold soaking part can be realized by adopting various schemes, the structure is not limited uniquely, and the structure is optimized and one of the feasible choices is provided: the cold soaking part comprises a second lifting mechanism 14, the second lifting mechanism 14 is connected with at least two cold soaking tables 15 for placing the crystal silicon materials 3, and the second lifting mechanism 14 is also connected with a second rotating mechanism and is driven to rotate in a shifting way by the second rotating mechanism. When the scheme is adopted, the second lifting mechanism 14 is used for carrying the crystalline silicon material 3, and enters the cold soaking tank 16 to be quenched by lifting, and the cooled crystalline silicon material 3 is rotated to be shifted to an output position, lifted and matched with output.

In the process of blanking and quenching, the gas environment is required to be kept suitable, so that the denaturation caused by the oxidation reaction of the crystalline silicon material 3 which is still in a high-temperature state and oxygen is avoided, and the method is optimized and one of the feasible choices is adopted: the butt joint of the blanking part and the cold soaking part is provided with a sealing box 17, one port of the sealing box 17 is communicated to the furnace body 1, and the other port of the sealing box is communicated to the cold soaking pool 16 and is immersed in cold soaking liquid. By adopting the scheme, the furnace body 1, the sealing box 17 and the cold soaking pool 16 are communicated to form a sealing space and realize the transportation of the crystal silicon material 3.

The above is an embodiment exemplified in this example, but this example is not limited to the above-described alternative embodiments, and a person skilled in the art may obtain various other embodiments by any combination of the above-described embodiments, and any person may obtain various other embodiments in the light of this example. The above detailed description should not be construed as limiting the scope of the present embodiments, which is defined in the appended claims.

Claims (10)

1. The utility model provides a heating furnace of crystalline silicon material cold crushing firing equipment which characterized in that includes:

The furnace body (1), there is heating channel in the furnace body (1), and the crystalline silicon material (3) is heated in the heating channel; a furnace lining structure is arranged in the heating channel, and an upper heating component and a lower heating component for heating are also arranged in the heating channel; the positive pressure device is also arranged for conveying gas towards the heating channel;

The feeding part is used for lifting the crystalline silicon material (3) and transferring the crystalline silicon material (3) to the transmission part:

The conveying part is used for receiving the crystalline silicon material (3) and continuously conveying the crystalline silicon material (3) into the furnace body (1), the conveying part comprises a supporting table (2) for supporting the crystalline silicon material (3), a concave-convex structure for keeping the position of the crystalline silicon material (3) stable is arranged on the supporting table (2), and the supporting table (2) is driven by a horizontal conveying mechanism and forms circular conveying on a horizontal plane;

The blanking part is arranged at the tail end of the transmission part and is used for receiving the crystal silicon material (3);

And the soaking cooling part is matched with the blanking part and used for receiving the crystalline silicon material (3), soaking the crystalline silicon material (3) into the cold soaking tank (16) for cooling, and lifting and conveying the crystalline silicon material (3) after cooling.

2. The heating furnace of the crystal silicon material cold crushing and heating device according to claim 1, wherein: the bottom of the heating channel is provided with a slag discharging structure.

3. The heating furnace of the crystal silicon material cold crushing and heating device according to claim 1, wherein: the feeding part and the discharging part comprise a first lifting mechanism (11), a carrying part (12) is arranged on the first lifting mechanism (11), and a placing part (1201) for placing the crystal silicon material (3) is arranged on the carrying part (12); the first lifting mechanism (11) is used for driving the carrying part (12) to ascend or descend, the first rotating mechanism drives the carrying part (12) to rotate so as to realize rotation transposition, the carrying part (12) is aligned with the supporting table (2) after rotation transposition, and the first lifting mechanism (11) descends so as to place the crystalline silicon material (3) on the supporting table (2) or the cold soaking part.

4. A heating furnace of a crystal silicon material cold crushing and heating device according to claim 3, wherein: the feeding part also comprises an objective table (13) for placing the crystal silicon material (3), the carrying part (12) is provided with an open slot, the width of the objective table (13) is smaller than that of the open slot, the objective table (13) is positioned at the inner side of the open slot, and when the carrying part (12) ascends from the lower part of the objective table (13), the crystal silicon material (3) on the objective table (13) is picked up and continuously ascended; the width of the supporting table (2) is smaller than that of the open slot, and the placement of the crystal silicon material (3) is completed when the carrying part (12) is aligned with the supporting table (2) and descends to the lower part of the supporting table, or the placement of the crystal silicon material (3) is completed when the carrying part (12) is aligned with the cold soaking part and descends to the lower part of the cold soaking part.

5. The heating furnace of the crystal silicon material cold crushing and heating device according to claim 1, wherein: the horizontal conveying mechanism comprises a circulating rail (10), and a plurality of supporting frames (6) used for connecting the supporting table (2) are arranged on the circulating rail (10) in a matching way; the device also comprises a driving assembly, and the driving assembly drives the supporting frame (6) to circularly convey along the circulating track (10).

6. The heating furnace of the crystal silicon material cooling and crushing heating device according to claim 5, wherein: the driving assembly comprises at least two driving shafts (4), a rotating wheel (5) is arranged on one driving shaft (4), a driving wheel is arranged on the other driving shaft (4), a driven wheel is arranged on the other driving shaft (4), a transmission part is connected between the driving wheel and the driven wheel, and the supporting frame (6) is connected with the transmission part and synchronously moves along with the transmission part.

7. The heating furnace of the crystal silicon material cold crushing and heating device according to claim 1, 5 or 6, wherein: the horizontal conveying mechanism is arranged at two sides of the advancing direction of the crystal silicon material (3) in a mirror symmetry mode, the supporting table (2) comprises a supporting surface for placing the crystal silicon material (3), the concave-convex structure is positioned on the supporting surface, and the concave-convex structure comprises V-shaped concave-convex grooves.

8. The heating furnace of the crystal silicon material cold-crushing and heating device according to claim 5 or 6, wherein: the furnace body (1) comprises a mounting cavity (101) for mounting the horizontal conveying mechanism, a sealing ring groove (8) is arranged in the mounting cavity (101), the sealing ring groove (8) is arranged along the advancing path of the supporting frame (6) in an extending mode and is positioned at the outer side of the driving assembly, a sealing plate (7) which downwards extends into the sealing ring groove (8) and is immersed by sealing liquid is arranged at the inner top of the mounting cavity (101), and the sealing ring groove (8) and the sealing plate (7) form a sealing isolation structure to prevent gas at the side of the driving assembly from entering the furnace body (1); one end of the supporting frame (6) is connected to the driving assembly, and the other end of the supporting frame enters from the inner side of the sealing ring groove (8) and protrudes out of the sealing ring groove (8) after being bent and wound below the sealing plate (7).

9. The heating furnace of the crystal silicon material cold-crushing and heating device according to claim 3 or 4, wherein: the cold soaking part comprises a second lifting mechanism (14), the second lifting mechanism (14) is connected with at least two cold soaking tables (15) for placing the crystal silicon materials (3), and the second lifting mechanism (14) is also connected with a second rotating mechanism and is driven to shift by the second rotating mechanism.

10. The heating furnace of the crystal silicon material cold-crushing and heating device according to claim 1 or 9, characterized in that: the butt joint of the blanking part and the cold soaking part is provided with a sealing box (17), one port of the sealing box (17) is communicated to the furnace body (1), and the other port of the sealing box is communicated to the cold soaking pool (16) and is immersed in cold soaking liquid.