CN220788742U

CN220788742U - Air inlet assembly, air inlet structure and semiconductor process equipment

Info

Publication number: CN220788742U
Application number: CN202322321109.2U
Authority: CN
Inventors: 梁永军
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2023-08-28
Filing date: 2023-08-28
Publication date: 2024-04-16
Anticipated expiration: 2033-08-28

Abstract

The utility model provides an air inlet assembly, an air inlet structure and semiconductor process equipment, which relate to the technical field of semiconductors and are used for air inlet of a semiconductor process chamber, wherein the air inlet assembly comprises: the device comprises an outer shell body and an inner shell body, wherein the outer shell body is used for being fixed above a bearing base, the inner shell body is arranged in the outer shell body, a first cavity is formed in the inner shell body, a second cavity is formed between the inner shell body and the outer shell body, the bottom of the first cavity is provided with an exposed first air outlet hole, and a second air outlet hole is formed in the outer wall of the second cavity and close to one side of the bearing base; the lateral supplementary air inlet piece is arranged in the second cavity, a third cavity is arranged in the lateral supplementary air inlet piece, a third air outlet hole communicated with the third cavity is formed in the side wall of the outer shell, and the third air outlet hole is positioned at one side far away from the air suction hole; solves the problem that in the prior art, the uniformity of nitrogen doping is poor easily in the process of carrying out plasma nitrogen doping on the thermally grown silicon oxide layer.

Description

Air inlet assembly, air inlet structure and semiconductor process equipment

Technical Field

The invention belongs to the technical field of semiconductors, and particularly relates to an air inlet assembly, an air inlet structure and semiconductor process equipment.

Background

With the development of integrated circuit technology, conventional silicon dioxide gate oxide dielectrics cannot meet the requirements, so that the conventional gate structure must be changed or the dielectric constant of the gate must be improved. The process requirement is generally met by adopting a method of doping nitrogen into the grid electrode, and the traditional nitrogen doping treatment is to introduce nitric oxide or nitrogen dioxide and anneal for a certain time to achieve the nitrogen doping. However, due to the development of the process, the gate oxide layer is thinner and thinner, and the leakage current of the gate is rapidly increased, so that the electric mobility of carriers in the channel is reduced. To suppress this effect, the most common approach is to plasma dope nitrogen (Decoupled Plasma Nitridation, DPN) on the thermally grown silicon oxide layer. The DPN technology is to carry out nitridation treatment on the thin oxide layer, and only carry out nitrogen doping on the upper surface of the oxide layer, so that the interface between silicon and the oxide layer is not affected. However, the uniformity of the DPN process is affected by multiple factors such as an air flow field, a temperature field, a coil magnetic field, an electric field, a geomagnetic field and the like, so that the problem of poor uniformity of nitrogen doping easily occurs in DPN process equipment, and the yield of products is reduced, and therefore, the DPN process equipment is required to use a certain adjusting means to optimize the process uniformity.

Disclosure of Invention

The invention aims to overcome the defects in the prior art, provides an air inlet assembly, an air inlet structure and semiconductor process equipment, and solves the problem that in the prior art, poor uniformity of nitrogen doping is easy to occur in the process of performing plasma nitrogen doping on a thermally grown silicon oxide layer.

In order to achieve the above object, the present invention provides an air intake assembly for air intake of a semiconductor process chamber, the semiconductor process chamber including a chamber body, a load-bearing base disposed in the chamber body, and an air intake hole disposed at the bottom of the chamber body and offset from the axis of the load-bearing base; the air intake assembly includes:

The device comprises an outer shell body and an inner shell body, wherein the outer shell body is used for being fixed above a bearing base, the inner shell body is arranged in the outer shell body, a first cavity is formed in the inner shell body, a second cavity is formed between the inner shell body and the outer shell body, the bottom of the first cavity is provided with an exposed first air outlet hole, and a second air outlet hole is formed in the outer wall of the second cavity and close to one side of the bearing base;

The lateral supplementary air inlet piece is arranged in the second cavity, a third cavity is arranged in the lateral supplementary air inlet piece, a third air outlet hole communicated with the third cavity is formed in the side wall of the outer shell, and the third air outlet hole is located at one side far away from the air pumping hole. Optionally, the first venthole is provided with a plurality ofly, and is a plurality of first venthole is followed at least one virtual circumference equipartition of the bottom of inner shell body, the bottom of shell body is provided with dodges the hole, dodge the hole and make a plurality of first venthole expose.

Optionally, the second venthole is provided with a plurality of, and a plurality of second ventholes are along circumference equipartition on the lateral wall that the shell body is close to the bottom.

Optionally, a plurality of third air outlet holes are arranged, the plurality of third air outlet holes are sequentially arranged along a virtual circular arc on a horizontal plane, the air outlet directions of the plurality of third air outlet holes face the direction away from the air outlet holes, and the distance between the adjacent third air outlet holes close to the middle part of the virtual circular arc is smaller than the distance between the adjacent third air outlet holes close to the two ends of the virtual circular arc; the distance between the middle part of the virtual arc and the air extraction hole is larger than the distance between other parts of the virtual arc and the air extraction hole.

Optionally, the lateral supplementary air inlet piece is annular, the periphery of lateral supplementary air inlet piece with the inner wall of shell body is connected, have the clearance between the inner periphery of lateral supplementary air inlet piece and the outer wall of inner shell body, so that in the second cavity and be located lateral supplementary air inlet piece both sides the space intercommunication.

Optionally, the projection of the third cavity on the horizontal plane is semi-circular, the lateral supplementary air inlet is provided with a plurality of air guide holes, and each air guide hole is communicated with one third air outlet.

Optionally, the lateral supplementary air inlet piece includes body portion and apron portion, the third cavity sets up in the body portion and the top is open, apron portion lid is established the top of body portion and shutoff the top of third cavity, the one end opening of air vent is in on the diapire of third cavity, the other end opening of air vent is in on the outer wall of body portion, the axis and the horizontal plane of air vent form the contained angle.

The utility model also provides an air inlet structure, comprising:

the air inlet assembly;

The air inlet device comprises a first air inlet pipe, a second air inlet pipe, a third air inlet pipe and a flow control component, wherein the first air inlet pipe, the second air inlet pipe and the third air inlet pipe are respectively communicated with a first cavity, a second cavity and a third cavity of the air inlet assembly, and the flow control component is used for controlling air inlet flow of the first air inlet pipe, the second air inlet pipe and the third air inlet pipe.

Optionally, the flow control component is a flow ratio controller, an input end of the flow ratio controller is connected with the main air inlet pipe, and three output ends of the flow ratio controller are respectively connected with the first air inlet pipe, the second air inlet pipe and the third air inlet pipe.

The utility model also provides a semiconductor process device comprising:

the device comprises a process chamber, wherein an air extraction component is arranged at one side of the bottom of the process chamber;

In the above air inlet structure, the air inlet component of the air inlet structure is disposed inside the process chamber, and the third air outlet hole faces to one side far away from the air extraction component.

The utility model provides an air inlet assembly, an air inlet structure and semiconductor process equipment, which have the beneficial effects that: the air inlet assembly is provided with an outer shell, an inner shell and a lateral supplementary air inlet piece, a first cavity, a second cavity and a third cavity are respectively formed in the inner shell, between the inner shell and the outer shell and in the lateral supplementary air inlet piece, the first cavity, the second cavity and the third cavity are respectively provided with a first air outlet hole, a second air outlet hole and a third air outlet hole, air can be respectively introduced into the middle area below the air inlet assembly, air can be introduced into the outer ring area below the air inlet assembly and the supplementary air can be introduced into the outer ring side of the air inlet assembly, the direction of the supplementary air can be controlled by arranging the direction of the third air outlet hole, when an air extraction component is arranged at the bottom side of the process chamber and is used for extracting air in the process chamber, the third air outlet hole faces to the side far away from the air extraction component, the air density of the side far away from the air extraction component in the process chamber caused by the operation of the air extraction component is less than the air density of the side close to the air extraction component, the effect of improving the uniformity of the air distribution in the process chamber can be realized, and the nitrogen doping process in the process chamber can be improved.

Additional features and advantages of the invention will be set forth in the detailed description which follows.

Drawings

The foregoing and other objects, features and advantages of the invention will be apparent from the following more particular descriptions of exemplary embodiments of the invention as illustrated in the accompanying drawings wherein like reference numbers generally represent like parts throughout the exemplary embodiments of the invention.

Fig. 1 shows a schematic structure of a prior art plasma doping apparatus.

Fig. 2 shows a schematic top view of a prior art plasma doping apparatus.

Fig. 3 shows a schematic structural view of an air intake assembly according to an embodiment of the present invention.

FIG. 4 illustrates a schematic cross-sectional view of a lateral supplemental air intake of an air intake assembly according to an embodiment of the invention.

Fig. 5 shows a schematic cross-sectional view of fig. 4.

Fig. 6 shows a schematic view of the cross section B of fig. 5.

Fig. 7 shows a schematic view of an air intake structure according to an embodiment of the present invention.

Reference numerals illustrate:

1. A process chamber; 2. a wafer; 3. a quartz tray; 4. a base; 5. a main air inlet pipe; 6. a flow ratio controller; 7. a first air inlet pipe; 8. a second air inlet pipe; 9. a first air outlet hole; 10. a second air outlet hole; 11. an air extracting part; 12. a quartz cover plate; 13. an upper electrode; 14. an inner coil; 15. an outer coil; 16. a plasma dense region; 17. a plasma sparse region; 18. an outer housing; 19. an inner housing; 20. a lateral supplemental air intake; 21. a third air outlet hole; 22. a third cavity; 23. an air guide hole; 24. a body portion; 25. a cover plate portion; 26. and a third air inlet pipe.

Detailed Description

Preferred embodiments of the present invention will be described in more detail below. While the preferred embodiments of the present invention are described below, it should be understood that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

As shown in fig. 1, a prior art plasma nitrogen doping apparatus comprises a process chamber 1, wherein a wafer 2 is placed on a quartz tray 3 and is located on a susceptor 4 in the process chamber 1 together with the quartz tray 3; the main air inlet pipe 5 is used for conveying single or mixed gases such as N ₂、O₂, he, ar and the like, realizes controllable inner area air inlet and outer area air inlet through the flow ratio controller 6, the first air inlet pipe 7 and the second air inlet pipe 8, and then enters the process chamber 1 from the air inlet component. Wherein the air inlet of the inner area flows out from the first air outlet hole 9, and the air inlet of the outer area flows out from the second air outlet hole 10, so that the air flow of the inner area and the air flow of the outer area are adjustable; in addition, the bottom side of the process chamber 1 is provided with an exhaust module including an exhaust part 11, by which low pressure control in the process chamber 1 is achieved. The quartz cover plate 12 separates the upper electrode 13 from the process chamber 1, wherein a radio frequency power supply (RF power supply) generates 13.56MHz radio frequency power, the radio frequency power is conducted into an inner coil 14 and an outer coil 15 in the upper electrode 13 through an upper matcher, a certain function of uniform magnetic field distribution is achieved through the quartz cover plate 12, and when process gas reaches the process chamber 1, low-pressure process gas is excited to generate plasma. Between the wafer 2 and the plasma, since the mobility of electrons is far greater than that of ions, a sheath structure is formed, and a potential difference is formed between the upper and lower interfaces of the sheath, so that the incorporation of plasma nitrogen is realized.

In the prior art, the distribution of plasmas in the inner area and the outer area is realized by adjusting the air flow ratio of the inner area and the outer area, the current ratio of the inner coil and the outer coil and the like, so that the uniformity of the nitrogen doping process result is adjusted.

However, in the above prior art, the suction position of the suction part is located at one side below the process chamber 1, and the exhaust module is located at the side below the quartz tray 3, which causes eccentricity of the flow field in the process chamber 1. As shown in fig. 2, the pumping speed is faster on the side of the process chamber 1 near the exhaust module, forming a plasma-dense region 16, and the pumping speed is slightly slower on the opposite side, forming a plasma-sparse region 17, resulting in non-uniform nitrogen-doped process results for the wafer 2. The existing methods for adjusting the air flow ratio of the inner area and the outer area, the current ratio of the inner coil and the outer coil and the like can only realize the adjustment of the plasma distribution of the inner area and the outer area, but lack the adjustment means for uneven nitrogen doping caused by the structure of the process chamber 1 in the form of side-down suction.

As shown in fig. 3, in order to solve the above-mentioned technical problem, the present utility model provides an air intake assembly for air intake of a semiconductor process chamber 1, the semiconductor process chamber includes a chamber body, a bearing base disposed in the chamber body, and an air intake hole disposed at the bottom of the chamber body and offset from the axis of the bearing base; the air inlet assembly includes:

The device comprises an outer shell 18 and an inner shell 19, wherein the outer shell 18 is used for being fixed above a bearing base, the inner shell 19 is arranged in the outer shell 18, a first cavity is formed in the inner shell 19, a second cavity is formed between the inner shell 19 and the outer shell 18, the bottom of the first cavity is provided with an exposed first air outlet hole 9, and a second air outlet hole 10 is formed in the outer wall of the second cavity and close to one side of the bearing base;

The lateral supplementary air inlet piece 20, the lateral supplementary air inlet piece 20 sets up in the second cavity, and the inside third cavity 22 that sets up of lateral supplementary air inlet piece 20, the lateral wall of shell body 18 is provided with the third venthole 21 with third cavity 22 intercommunication, and the third venthole is located the one side of keeping away from the gas pumping hole.

Specifically, the air inlet assembly provided by the utility model is provided with the outer shell 18, the inner shell 19 and the lateral supplementary air inlet piece 20, a first cavity, a second cavity and a third cavity 22 are respectively formed in the inner shell 19, between the inner shell 19 and the outer shell 18 and in the lateral supplementary air inlet piece 20, the first cavity, the second cavity and the third cavity 22 are respectively provided with the first air outlet hole 9, the second air outlet hole 10 and the third air outlet hole 21, air is respectively introduced into the middle area below the air inlet assembly, air is introduced into the outer ring area below the air inlet assembly and supplementary air is introduced into the outer ring side of the air inlet assembly, the direction of the supplementary air is controlled by arranging the third air outlet hole 21, when the air extraction component 11 is arranged at the bottom side of the process chamber 1 and is used for extracting air in the process chamber 1, the third air outlet hole 21 is arranged at the side far away from the air extraction component 11, the density of the air at the side far away from the air extraction component 11 in the process chamber 1 is less than that of the air extraction component 11, the uniformity of nitrogen in the process chamber can be improved, and the uniformity of nitrogen doping in the process chamber can be further improved.

Alternatively, the inner housing 19 may be open at the bottom, the bottom of the outer housing 18 may be provided with an end plate, the lower end surface of the inner housing 19 is connected with the end plate of the outer housing 18, and the first air outlet hole 9 may be formed in the end plate, and a part of the end plate forms a cavity wall of the first cavity.

In this embodiment, the outer shell 18 and the inner shell 19 are both cylindrical, the bottom of the outer shell 18 is provided with an annular plate, the top of the outer shell 18 is opened and is provided with a detachable cover plate, the inner shell 19 can be conveniently installed in the outer shell 18 by opening the cover plate, the top of the inner shell 19 is provided with a top plate, the bottom of the inner shell 19 is provided with a bottom plate, the bottom plate is provided with a nozzle type structure and is provided with a plurality of first air outlet holes 9, the bottom plate is connected with the annular plate, the first air inlet holes are formed in the cover plate, and the second air inlet holes are formed in the top plate.

Optionally, the first air outlet holes 9 are provided in plurality, the first air outlet holes 9 are uniformly distributed along at least one virtual circumference of the bottom of the inner housing 19, and the bottom of the outer housing 18 is provided with avoiding holes, so that the first air outlet holes 9 are exposed.

Specifically, a plurality of first air outlet holes 9 are formed in the bottom plate of the inner shell 19 and are used for supplying air to the middle area below the air inlet assembly, and the arrangement of the avoiding holes enables the plurality of first air outlet holes 9 to be communicated with the outer space of the outer shell 18; the first air outlet holes 9 are uniformly distributed along at least one virtual circumference to form annular distribution, and when the virtual circumference is provided with a plurality of air outlet holes, the virtual circumferences are concentric and have different radiuses, and the first air outlet holes 9 form a multi-circle distribution mode.

In this embodiment, the aperture of the first air outlet hole 9 is 1±0.5mm.

Optionally, a plurality of second air outlet holes 10 are provided, and the plurality of second air outlet holes 10 are uniformly distributed on the outer side wall, close to the bottom, of the outer shell 18 along the circumferential direction.

Specifically, a plurality of second air outlet holes 10 are uniformly distributed along the outer periphery of the outer casing 18 at positions of the outer wall of the outer casing 18 near the bottom thereof, and the plurality of second air outlet holes 10 are used for supplying air to the lower outer ring region of the air inlet assembly.

In this embodiment, the inner end opening of the second air outlet hole 10 is higher than the outer end opening thereof, so as to form a downward inclined arrangement of the outer end, and the inclination angle of the second air outlet hole 10 relative to the vertical is 30-60 °, preferably 45 °; the distance from the outer end opening of the second air outlet hole 10 to the lower end surface of the outer casing 18 is 10-20mm.

Optionally, a plurality of third air outlet holes 21 are provided, the air outlet directions of the plurality of third air outlet holes face the direction far away from the air outlet holes, the plurality of third air outlet holes 21 are sequentially arranged along a virtual circular arc on a horizontal plane, and the distance between adjacent third air outlet holes 21 near the middle part of the virtual circular arc is smaller than the distance between adjacent third air outlet holes 21 near the two ends of the virtual circular arc; the distance between the middle part of the virtual arc and the air suction hole is larger than the distance between other parts of the virtual arc and the air suction hole.

Specifically, the third air outlet hole 21 is communicated with the third cavity 22 and is used for supplementing air to one side of the outer ring of the air inlet assembly, the third air outlet hole 21 at the middle position close to the virtual arc is far away from the air extraction component 11 at one side of the bottom of the process chamber 1 during use, the gas distribution at the position is thinner, so that the supplementing gas demand is larger, the set third air outlet hole 21 is denser, and the third air outlet hole 21 at the position close to the two ends of the virtual arc is relatively sparse, so that the uniformity of the distribution of the process gas and the plasma in the process chamber 1 is guaranteed.

In this embodiment, as shown in fig. 5, the axes of the plurality of third air outlet holes 21 are parallel to each other, and the air outlet directions of the plurality of third air outlet holes 21 are all directed away from the air outlet hole, i.e. the air outlet directions of all the third air outlet holes 21 are all directed to the left in fig. 5; the aperture of the third air outlet hole 21 is 1 + -0.5 mm.

Optionally, the lateral supplementary air inlet 20 is annular, the outer periphery of the lateral supplementary air inlet 20 is connected with the inner wall of the outer casing 18, and a gap is formed between the inner periphery of the lateral supplementary air inlet 20 and the outer wall of the inner casing 19, so that the spaces in the second cavity and located at two sides of the lateral supplementary air inlet 20 are communicated.

Specifically, the lateral supplementary air inlet 20 is annular, the third cavity 22 inside the lateral supplementary air inlet 20 may be an outer ring and open, the third cavity 22 is directly communicated with the third outlet hole through the connection between the lateral supplementary air inlet 20 and the inner wall of the outer shell 18, the third cavity 22 may also be an outer ring closed, and the outer ring cavity wall of the third cavity 22 is provided with an air guide hole 23 communicated with the third air outlet hole 21; a gap is formed between the inner periphery of the lateral supplementary intake 20 and the outer wall of the inner housing 19 so that the lateral supplementary intake 20 does not completely block the second chamber in which the gas can flow.

In this embodiment, an annular supporting member is provided on the inner wall of the outer casing 18, and is used for supporting the lateral supplementary air inlet 20, so that the lateral supplementary air inlet 20 is convenient to install, and the distance between the supporting member and the lower end face of the outer casing 18 is 25-35mm.

Optionally, the third cavity 22 is semi-circular in projection on a horizontal plane, and the lateral supplementary air inlet 20 is provided with a plurality of air guide holes 23, and each air guide hole 23 is communicated with one third air outlet hole 21.

Specifically, as shown in fig. 4, a semicircular third cavity 22 is disposed inside the lateral supplementary air inlet member 20, and air guide holes 23 with the same number as the third air outlet holes 21 and matched with the third air outlet holes 21 are formed, and the third air outlet holes 21 can be communicated with the third cavity 22 through the air guide holes 23 to realize lateral supplementary air inlet.

Optionally, the lateral supplementary air inlet 20 includes a body portion 24 and a cover plate portion 25, the third cavity 22 is disposed in the body portion 24 and has an open top, the cover plate portion 25 is disposed on the top of the body portion 24 and seals the top of the third cavity 22, an opening at one end of the air vent 23 is disposed on a bottom wall of the third cavity 22, an opening at the other end of the air vent 23 is disposed on an outer wall of the body portion 24, and an axis of the air vent 23 forms an included angle with a horizontal plane.

Specifically, the body portion 24 and the cover plate portion 25 are both in an annular structure, the third cavity 22 is formed by the downward depression of the upper surface of the body portion 24, the cover plate portion 25 is arranged on the upper surface of the body portion 24 in a covering manner and seals the third cavity 22, the bottom wall of the third cavity 22 is provided with an inclined air guide hole 23, and the air guide hole 23 is inclined towards the third air outlet hole 21 corresponding to the air guide hole 23 and communicated with the third air outlet hole 21, so that the supplementary air is led out.

In this embodiment, the width of the third cavity 22 is 3±0.03mm, the coverage area of the third cavity is a half circumference of the annular body 24, the third air inlet hole is arranged on the cover plate 25 and is communicated with the third cavity 22, and the inclination angle of the air guide hole 23 relative to the horizontal plane is 30-60 degrees; the number of the air guide holes 23 and the number of the third air outlet holes 21 are respectively 5-9; preferably, 7 air guide holes 23 and third air outlet holes 21 are provided, wherein one third air outlet hole 21 is positioned in the middle of the virtual circular arc, and one third air outlet hole 21 is respectively arranged at the position that the central angles of the virtual circular arcs at two sides of the third air outlet hole 21 rotate by 30 degrees, 45 degrees and 90 degrees.

As shown in fig. 7, the present utility model further provides an air intake structure, including:

the air inlet assembly;

the first air inlet pipe 7, the second air inlet pipe 8, the third air inlet pipe 26 and the flow control part are respectively connected with the first air inlet hole, the second air inlet hole and the third air inlet hole of the air inlet assembly, and the flow control part is used for controlling the air inlet flow of the first air inlet pipe 7, the second air inlet pipe 8 and the third air inlet pipe 26.

Specifically, the first air inlet pipe 7, the second air inlet pipe 8 and the third air inlet pipe 26 are used for transmitting single or mixed gases such as N ₂、O₂, he, ar and the like, the flow rate of the gases transmitted by the first air inlet pipe 7, the second air inlet pipe 8 and the third air inlet pipe 26 is controlled by the flow control component, the gases are respectively transmitted to the first cavity, the second cavity and the third cavity 22 by the first air inlet pipe 7, the second air inlet pipe 8 and the third air inlet pipe 26, and then are respectively discharged to different areas inside the process chamber through the first air outlet hole 9, the second air outlet hole 10 and the third air outlet hole 21, namely: air is respectively introduced into the lower middle area of the air inlet assembly, the lower outer ring area of the air inlet assembly and the outer ring side of the air inlet assembly; due to the arrangement of the lateral supplementary air inlet 20 and the third air outlet, supplementary air can be carried out in a certain side area of the air inlet assembly in the process chamber, the lower density of the process gas or plasma in the side area is compensated, the distribution of the process gas or plasma in the process chamber can be controlled by adjusting the orientation of the third air outlet, and the uniformity of the distribution of the process gas or plasma is improved.

In this embodiment, the second air inlet pipe 8 penetrates the outer casing 18 and is connected with the first air inlet hole on the inner casing 19, so as to communicate with the first cavity, and the third air inlet pipe 26 penetrates the outer casing 18 and is connected with the third air inlet hole on the lateral supplementary air inlet piece 20, so as to communicate with the third cavity 22.

Alternatively, the flow control component is a flow ratio controller 6, an input end of the flow ratio controller 6 is connected with the main air inlet pipe 5, and three output ends of the flow ratio controller 6 are respectively connected with the first air inlet pipe 7, the second air inlet pipe 8 and the third air inlet pipe 26.

Specifically, the flow ratio controller 6 may be used as a flow control unit, one main air inlet pipe 5 is connected to the flow ratio controller 6, and the flow ratio of the air output by the first air inlet pipe 7, the second air inlet pipe 8 and the third air inlet pipe 26, which are respectively connected to the three output ends of the main air inlet pipe 5, can be controlled by the flow ratio controller 6; taking the case of nitriding the wafer 2 by using DPN equipment as an example, the process is performed by using the proportion of 45% of the inner-area air intake, 45% of the outer-area air intake and 10% of the single-side supplementary air intake initially, that is, the flow proportion controller 6 controls the output gas flow in the first air intake pipe 7 and the second air intake pipe 8 to be 45% of the total gas flow in the main air intake pipe 5, the output gas flow in the third air intake pipe 26 to be 10% of the total gas flow in the main air intake pipe 5, then the process is further adjusted according to the process result, if the nitrogen doping amount in the central area is higher than the edge, the outer-area air intake is lifted, that is, the gas flow proportion in the second air intake pipe 8 is increased, if the nitrogen doping amount in the central area is lower than the edge, the inner-area air intake is lifted, that is increased, that is, the gas flow proportion in the first air intake pipe 7 is increased, and if the nitrogen doping amount in the side far from the suction position of the tail gas module is lower than the side close to the suction position of the tail gas module is increased, that the lateral supplementary air intake is increased, that is the gas flow proportion in the third air intake pipe 26 is further adjusted, and otherwise the gas flow proportion in the third air intake pipe 26 is decreased.

The utility model also provides a semiconductor process device comprising:

the device comprises a process chamber 1, wherein an air extraction component 11 is arranged at one side of the bottom of the process chamber 1;

In the above-described air intake structure, the air intake assembly of the air intake structure is disposed inside the process chamber 1, and the third air outlet 21 faces the side away from the air exhaust member 11.

Specifically, taking a semiconductor process device as an example of a plasma nitrogen doping device, one side of the bottom of the process chamber 1 is provided with a tail gas module comprising an air extraction component 11, and low-pressure control in the process chamber 1 is realized through the tail gas module; the suction position of the suction part is positioned at one side below the process chamber 1, and the tail gas module is positioned at the side below the quartz tray 3, so that the eccentricity of a flow field in the process chamber 1 is caused; the pumping speed is faster on the side of the process chamber 1 near the end gas module to form a plasma-dense region 16, while the pumping speed is slightly slower on the opposite side to form a plasma-sparse region 17, thereby resulting in uneven nitrogen doping process results for the wafer 2. Through the arrangement of the air inlet structure, the third air outlet hole 21 of the air inlet assembly faces to the side far away from the air extraction component 11, and the lateral supplementary air inlet is performed through the lateral supplementary air inlet piece 20, so that the supplementary air inlet can avoid that the gas density of the side far away from the air extraction component 11 in the process chamber 1 caused by the operation of the air extraction component 11 is smaller than that of the side close to the air extraction component 11, thereby realizing the effect of improving the uniformity of gas distribution in the process chamber 1, and further improving the nitrogen doping uniformity in the process of performing plasma nitrogen doping on the thermally grown silicon oxide layer.

The foregoing description of embodiments of the invention has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the various embodiments described.

Claims

1. An air inlet assembly for air inlet of a semiconductor process chamber, which is characterized by comprising a chamber body, a bearing base arranged in the chamber body, and an air pumping hole which is arranged at the bottom of the chamber body and deviates from the axis of the bearing base; the air intake assembly includes:

The lateral supplementary air inlet piece is arranged in the second cavity, a third cavity is arranged in the lateral supplementary air inlet piece, a third air outlet hole communicated with the third cavity is formed in the side wall of the outer shell, and the third air outlet hole is located at one side far away from the air pumping hole.

2. The air inlet assembly of claim 1, wherein the first air outlet holes are provided in plurality and are uniformly distributed along at least one virtual circumference of the bottom of the inner housing, and the bottom of the outer housing is provided with avoidance holes which expose the first air outlet holes.

3. The air inlet assembly according to claim 1, wherein a plurality of second air outlet holes are formed, and the second air outlet holes are uniformly distributed on the outer side wall, close to the bottom, of the outer shell in the circumferential direction.

4. The air inlet assembly according to claim 1, wherein a plurality of third air outlet holes are provided, the air outlet directions of the plurality of third air outlet holes are all in a direction away from the air outlet holes, the plurality of third air outlet holes are sequentially arranged along a virtual circular arc on a horizontal plane, and the distance between the adjacent third air outlet holes near the middle part of the virtual circular arc is smaller than the distance between the adjacent third air outlet holes near the two ends of the virtual circular arc; the distance between the middle part of the virtual arc and the air extraction hole is larger than the distance between other parts of the virtual arc and the air extraction hole.

5. The air intake assembly of claim 1, wherein the lateral supplemental air intake member is annular, an outer periphery of the lateral supplemental air intake member is connected to an inner wall of the outer housing, and a gap is provided between an inner periphery of the lateral supplemental air intake member and an outer wall of the inner housing, such that spaces within the second cavity and on both sides of the lateral supplemental air intake member are in communication.

6. The air intake assembly of claim 5, wherein the third cavity has a semi-circular shape in plan view, and the lateral supplemental air intake member is provided with a plurality of air guide holes, each of the air guide holes communicating with one of the third air outlet holes.

7. The air intake assembly of claim 6, wherein the lateral supplemental air intake member comprises a body portion and a cover plate portion, the third cavity is disposed in the body portion and has an open top, the cover plate portion is disposed on the top of the body portion and seals the top of the third cavity, one end opening of the air vent is disposed on a bottom wall of the third cavity, the other end opening of the air vent is disposed on an outer wall of the body portion, and an axis of the air vent forms an angle with a horizontal plane.

8. An intake structure, comprising:

An air intake assembly according to any one of claims 1-7;

9. The intake structure according to claim 8, wherein the flow control means is a flow ratio controller, an input end of the flow ratio controller is connected to a main intake pipe, and three output ends of the flow ratio controller are connected to the first intake pipe, the second intake pipe, and the third intake pipe, respectively.

10. A semiconductor processing apparatus, comprising:

The gas inlet structure according to claim 8 or 9, wherein the gas inlet assembly of the gas inlet structure is provided inside the process chamber, and the third gas outlet hole is directed to a side remote from the gas extraction member.