CN220709589U - High-stability voltage-stabilizing integrated circuit and electrostatic protection circuit thereof - Google Patents

Abstract

A high-stability voltage-stabilizing integrated circuit and an electrostatic protection circuit thereof belong to the field of semiconductor integrated circuits. The circuit comprises a starting bias circuit module, an amplifying compensation output circuit module, a temperature protection module, a current protection circuit module, a voltage protection circuit module and an electrostatic protection module. The positive end of the starting bias circuit module is connected with the power end, and the negative end is connected with the output end; the negative ends of the temperature protection module and the current protection circuit module are connected with the reference end, the negative end of the voltage protection circuit module is grounded, and the reference voltage output end of the amplifying compensation output circuit module is grounded through an adjustable sampling network; the bias current output end is respectively connected with the bias current input end corresponding to each circuit module; the output ends of the temperature protection module and the current protection circuit module are connected with the corresponding ports of the amplifying compensation output circuit module. The electrostatic protection module is connected with the corresponding end of the voltage stabilizing integrated circuit. Solves the problems of large volume and various types of components of the existing products. Widely applied to complex environments.

Description

High-stability voltage-stabilizing integrated circuit and electrostatic protection circuit thereof

Technical Field

The utility model belongs to the field of semiconductor integrated circuits, and further relates to the field of semiconductor linear integrated circuits, in particular to a high-stability voltage-stabilizing integrated circuit and an electrostatic protection circuit thereof.

Background

The traditional linear voltage stabilizing circuit adopts NPN Darlington as an adjusting tube, the working pressure difference range is 1.5-2.5V, the pressure difference is large, the power consumption is large in application, a large-area radiating plate is required to be added, and the normal operation of the device can be ensured, so that the application of the traditional linear voltage stabilizing circuit is limited to a certain extent, and the added large-area radiating plate brings much inconvenience to the application of the voltage stabilizer. Therefore, the utility model improves the voltage regulator, the PNP is adopted to drive the NPN adjusting tube in the design, the voltage difference can be reduced to 1.0-1.2V, the power consumption can be obviously reduced, compared with the traditional voltage regulator, the power consumption is reduced by 50% -60%, the circuit is subjected to full process angle simulation verification, the process consistency is strong, and the voltage regulator is a structure of an integrated voltage stabilizing circuit with a complete and multifunctional protection circuit and a matched circuit.

In view of this, the present utility model has been made.

Disclosure of Invention

The technical problems to be solved by the utility model are as follows: the linear voltage stabilizing circuit solves the problems of large volume, complex structure and various types of components of the traditional linear voltage stabilizing circuit.

The utility model is characterized in that: the high-stability voltage-stabilizing integrated circuit is designed by taking a constant current source bias circuit, a current amplification reference circuit, a compensation circuit and an output circuit as main lines, and protecting circuit modules such as over-temperature, over-current, over-voltage, static protection and the like are designed, so that various circuit modules can work independently and can be partially modified to adapt to other circuits, the whole circuit function is realized, all active devices adopted in the circuit are all the same type of active devices, such as all transistors, field effect transistors, MOS (metal oxide semiconductor) transistors or IGBT (insulated gate bipolar transistor), all resistors adopted in the circuit can be epitaxial layer resistors, base resistors, collector resistors, emitter resistors and the like, the consistency of the components is high, the types of the components in the circuit and the complexity of a process structure are greatly reduced, the chip area and the power consumption are reduced, the process stage yield is high, the cost is low, and the reliability is high.

To this end, the present utility model provides a high stability voltage stabilizing integrated circuit, as shown in fig. 1. Comprising the following steps: the power supply circuit comprises a starting bias circuit module, an amplifying compensation output circuit module, a temperature protection module, a current protection circuit module and a voltage protection circuit module.

The starting bias circuit module comprises a starting circuit and a bias circuit, the starting circuit receives external voltage and provides signals for the bias circuit, so that the bias circuit starts to work, and the bias circuit module copies the same or a certain proportion of current through a plurality of mirror image current sources and provides working current for other circuit modules;

the amplifying compensation output circuit module comprises an amplifying circuit, a reference circuit, a compensation circuit and an output circuit, wherein the amplifying compensation output circuit module receives the bias current of the bias circuit, so that current amplifying and voltage stabilizing output are started, the compensation circuit is used for monitoring the amplifying current, and once the monitored current is too large or too small, the direction of the amplifying compensation output circuit module can be adjusted through the compensation circuit; the reference circuit generates a reference power supply, and voltage stabilization control is carried out on the reference voltage through a voltage division sampling network at the output end of the reference voltage; the output circuit performs power amplification on the reference voltage;

the over-temperature circuit protection module is started after receiving the bias current configured by the bias circuit, and detects the temperature of the whole circuit in real time through the monitored current, wherein the transistor is a set negative temperature coefficient, and once the temperature is up to a set degree, the transistor is conducted, namely, the current is fully introduced into the ground terminal, so that the whole circuit is protected from being influenced by over-temperature;

the current protection circuit module and the voltage protection circuit module are used for detecting the current and the voltage of the circuit in real time, and once the current exceeds a set value or the voltage is overlarge, the current flows out from the protection circuit to the ground end completely, so that the large current does not pass through the compensation circuit and the output circuit, and the circuit is protected;

the positive end of the starting bias circuit module is connected with the input voltage VIN end, and the negative end of the starting bias circuit module is connected with the reference power supply VOUT2 end; the negative terminals of the temperature protection module and the current protection circuit module are connected with the VOUT2 end of the reference power supply; the negative end of the voltage protection circuit module is grounded, and the power supply end is connected with the input voltage VIN end; the bias current output end is respectively connected with bias current input ends corresponding to the amplifying compensation output circuit module, the temperature protection module, the current protection circuit module and the voltage protection circuit module; the output ends of the temperature protection module and the current protection circuit module are connected with the corresponding ports of the amplifying compensation output circuit module, and the reference voltage output end of the amplifying compensation output circuit module is grounded through a voltage division sampling network.

The working mode of the integrated circuit structure is as follows: and a signal is given at the power supply end, the circuit module starts to work, the signal is provided for the bias circuit module, and the bias circuit provides current for the amplifying circuit module, the compensation circuit module, the output module, the temperature protection module, the voltage protection module and the current protection module. The amplifying module is a current amplifying module and is used for amplifying the input current, the compensating circuit module is used for controlling the amplified current, and finally the amplified current is stabilized through the output module. The stability of the reference voltage is controlled by a voltage division sampling network. In addition, the voltage protection module, the current protection module, the temperature protection module and the static protection module are used for monitoring the working conditions of the starting circuit module, the bias circuit module, the amplifying circuit module, the compensating circuit module and the output circuit module in the whole process.

The various circuit modules of the utility model can work independently, and the various protection circuit modules can be partially modified to adapt to other circuits. The circuit modules are mutually coordinated and unified to realize circuit functions, and finally are combined into a structure which can face complex environments in various electronic aspects and stably work, so that the high-stability voltage-stabilizing integrated circuit is realized.

The active devices of the utility model are all the same kind of active devices, all transistors or all field effect transistors or all MOS, and have strong consistency and high yield in the process stage.

The voltage stabilizing circuit has a simple structure, has various protection circuits to ensure the stability of the circuit, and is suitable for being used in complex environments, such as high altitude or aerospace environments.

Drawings

Fig. 1 is a schematic block diagram of a schematic circuit block.

Fig. 2 is a schematic diagram of the overall circuit principle structure.

FIG. 3 is a schematic diagram of a start-up bias circuit module.

Fig. 4 is a schematic diagram of the structure of the amplifying compensation output circuit module.

Fig. 5 is a schematic diagram of a temperature protection (over-temperature protection) circuit module structure.

Fig. 6 is a schematic diagram of a current protection (overcurrent protection) circuit module structure.

Fig. 7 is a schematic diagram of a voltage protection (overvoltage protection) circuit module structure.

Fig. 8 is a schematic structural diagram of an electrostatic protection module.

Detailed Description

Embodiment one:

as shown in fig. 1-7, the following are specific embodiments of the high-stability voltage stabilizing integrated circuit:

1. start bias circuit module

As shown in fig. 3, the start bias circuit module includes resistors R1, R2, R3, R4, R5, R6, R8, R9, R10, a zener diode Z1, PNP transistors Q1, Q2, Q3, Q4, Q5, and NPN transistors Q10, Q11.

One end of R1, R2, R3, R4, R5 and R6 is connected with an input voltage VIN end, the other end of R1 is connected with one end of R8 and a cathode of Z1, the other end of R2 is connected with an emitter of Q1, the other end of R3 is connected with an emitter of Q2, the other end of R4 is connected with an emitter of Q3, the other end of R5 is connected with an emitter of Q4, the other end of R6 is connected with an emitter of Q5, a collector of Q1 is connected with a collector of Q10, bases of Q1, Q2, Q3, Q4 and Q5, a base of Q10 is connected with a base of Q11, the other end of R8, a collector of Q2 and one end of R10, an anode of Z1 is connected with the other end of R9, the emitter of Q11 and the VOUT2 end, and collectors of Q3, Q4 and Q5 output bias currents I3, I4 and I5 respectively.

The transistors start from Q11 and form mirror current mirrors with Q10, Q1, Q2, Q3, Q4 and Q5.

The R2, R3, R4, R5 and R6 provide static working points for the transistors Q1, Q2, Q3, Q4 and Q5 respectively.

2. Amplifying compensation output circuit module

As shown in fig. 4, the amplifying and compensating output circuit module includes NPN transistors Q9, Q12, Q13, Q17, Q18, Q26, Q27, PNP transistors Q6, Q7, Q8, Q14, Q15, Q16, resistors R7, R11, R12, R13, R14, R22, R23, R24, R28, R29, capacitors C1, C2, and a diode D1.

The collector of Q13 is connected with the emitter of Q6 and Q7, one end of R7, the emitter of Q8, the collector of Q9, the input power VIN end, the collector of Q12 is connected with the corresponding bias current end, the emitter of Q15 and Q16, the collector of Q6, the base of Q26, one end of R22 is connected with the emitter of Q13, the emitter of Q14 is connected with the corresponding bias current end, the base of Q13, the base of Q14 is connected with one end of C1, one end of C2, the collector of Q15 and Q17, the other end of C2 is connected with one end of R13, one end of R28, one end of R29, the other end of R29 is grounded, the emitter of Q17 is connected with the other end of R13, one end of R12, the other end of R12 is connected with the emitter of Q18, the collector of Q18 is connected with the collector of Q16, the bases of Q15 and Q16, the collector of Q26 is connected with the collector of Q7, the Q6 and Q7, the emitter of Q26 is connected with one end of R23, the other end of R23 is connected with the collector of R27, and the other end of R9, the emitter of R27 is connected with the other end of R24, the emitter of R9 and the other end of R24 is connected with the collector of R9, the emitter of R18 and the other end of R9.

The transistors Q12, Q13 and Q14 form a three-stage emitter follower amplifying circuit.

The transistors Q15, Q16, Q17 and Q18 and the resistors R12 and R13 form an energy gap reference voltage circuit.

The capacitors C1 and C2 are system stability compensation capacitors, and the resistor R28 is an output voltage sampling resistor.

The Q6 and Q7 form a proportion mirror current mirror, and the collector current of the Q6 is 1-500 times of that of the Q7.

3. Temperature protection circuit module

As shown in fig. 5, the temperature protection module includes NPN transistors Q20, Q22, PNP transistors Q19, Q21, and resistors R14, R15, R16, R17.

The emitter of the Q19 and the Q21 are connected with the corresponding bias current end and one end of the R14, the base of the Q19 is connected with the base of the Q20, the collector of the Q20 is connected with the base of the Q21 and the other end of the R14, the emitter of the Q20 is connected with one end of the R15, the collector of the Q21 is connected with the base of the Q22 and one end of the R16, the collector of the Q22 is connected with the corresponding bias current end, the emitter of the Q22 is connected with one end of the R17, and the collector of the Q19 is connected with the other end of the R15, the other end of the R16, one end of the R17 and the vout 2.

The Q22 is a negative temperature coefficient transistor used for detecting the temperature of the whole circuit.

The output end of the over-temperature circuit protection module is a compensation circuit and an output circuit in the amplifying compensation output module.

4. Current protection circuit module

As shown in fig. 6, the current protection module includes NPN transistors Q23, Q24, Q25, resistors R18, R19, R20, R21, and compensation capacitor C3.

The collector of the Q23 is connected with a corresponding bias current end, one end of the R18 and one end of the R20, the emitter of the Q23 is connected with the emitter and the VOUT2 end of the Q24, the base of the Q23 is connected with the collector of the Q24, the other end of the R18 and one end of the C3, the base of the Q24 is connected with the other end of the C3 and one end of the R19, the collector of the Q25 is connected with the other end of the R19 and one end of the R21, the base of the Q25 is connected with the other end of the R21 and the other end of the R20, and the emitter of the Q25 is connected with the VOUT end.

The current protection module monitors the I3 current branch.

The current protection module is provided with three branches for splitting simultaneously: i3-transistor Q23-Vout 2; i3-resistor R18-transistor Q24-Vout 2; i3-resistor R20-resistor R21-transistor Q25-Vout.

The output end of the current protection module is a compensation circuit and an output circuit in the amplifying compensation output module.

5. Voltage protection circuit module

As shown in fig. 7, the voltage protection module includes voltage stabilizing tubes Z2, Z3, Z4, Z5, Z6, Z7, resistors R25, R26, an NPN transistor Q28, the positive terminal of which is connected to the VIN terminal, and the lower terminal of which is connected to ground.

The cathode of Z2 is connected with VIN end, the anode of Z2 is connected with Z3 and Z4 in the same direction in series, then is connected with the cathode of Z5 through R25, the anode of Z5 is connected with Z6 and Z7 in the same direction in series, then is connected with one end of R26 and the base electrode of Q28, the other end of R26 is connected with the emitter electrode of Q28 and the grounding end, and the collector electrode of Q28 is connected with the corresponding bias current end.

The voltage stabilizing tubes Z2, Z3, Z4, Z5, Z6 and Z7 are voltage stabilizing tube groups, and the voltage stabilizing tube groups comprise 1-1000 voltage stabilizing tubes.

The positions of the voltage stabilizing tubes Z2, Z3, Z4, Z5, Z6, Z7 and the resistor R25 are not limited.

Embodiment two:

as shown in fig. 8, the following electrostatic protection module is added on the basis of the first embodiment:

the static protection module is connected with the input end, the output end, the reference voltage end and the grounding end of the voltage stabilizing integrated circuit, and performs static protection on all the ports.

The electrostatic protection module is composed of NPN transistors Q29 and Q31 and PNP transistors Q30 and Q32.

The collector of the transistor Q29 is connected with the collector of the transistor Q30, the base of the transistor Q30 and the VIN end, the collector of the transistor Q30 is connected with the collector of the transistor Q31 and the VOUT end, the emitter and the base of the transistor Q31 are connected with the emitter, the base and the VOUT2 end of the transistor Q32, and the collector of the transistor Q32 is grounded.

The bases and the emitters of the transistors Q29, Q30, Q31 and Q32 are short-circuited, and are connected in opposite pairs to form two groups of bidirectional antistatic diodes.

Independent of the complete circuit diagram shown in fig. 2, is connected to the corresponding circuit port in the circuit diagram of fig. 8.

The polarity of the transistors in the circuit can be changed according to actual conditions, such as NPN transistor becomes PNP transistor, NPN transistor becomes NMOS transistor, PNP transistor becomes PMOS transistor, or active devices such as IGBT.

The type of the resistor in the above circuit is not limited, and may be an epitaxial layer resistor, a base resistor, a collector resistor, an emitter resistor, etc.

The working principle of the high-stability voltage-stabilizing integrated circuit is as follows:

as shown in fig. 3, after receiving an external voltage, the starting circuit of the starting bias circuit module has a current passing through the resistor R1 to provide a signal for the bias circuit, so that the bias circuit starts to work. The bias circuit module copies the same or a certain proportion of current through a plurality of mirror image current sources in a mirror image mode, and provides signals for other subsequent circuit modules.

The starting bias circuit comprises resistors R1, R2, R3, R4, R5, R6, R8, R9 and R10, a voltage stabilizing diode Z1 and transistors Q1, Q2, Q3, Q4, Q5, Q10 and Q11. When the power is turned on, the R1, R8, R10 of the turn-on circuit has current flowing through it, thus turning on the Q11 transistor, so that the bias circuit is activated by the turn-on circuit signal. The bias circuit is started by Q11, Q10 plus R9 and Q11 form a mirror current source, the current flowing on Q10 and Q11 mirror copy to form the same or a certain proportion of current, Q1 and Q10 form the mirror current source, Q2 and Q1 form the mirror current source, Q3 and Q2 form the mirror current source, Q4 and Q3 form the mirror current source, Q5 and Q4 form the mirror current source, the current generated by Q3, Q4 and Q5 provides signals for a lower circuit module, and resistors R2, R3, R4, R5 and R6 respectively play a role of stabilizing static working points for transistors Q1, Q2, Q3, Q4 and Q5. The voltage regulator tube Z1 is reversely connected to the lower end of the resistor R1, so that starting current flows to Q11.

As shown in fig. 4, the amplifying compensation output circuit module receives the signal of the bias circuit, so as to start amplifying the signal and stably outputting, and the compensation circuit is used for monitoring the amplifying current, and once the amplifying current passes through the circuit I3 to be too large or too small, the amplifying current can be adjusted in direction by the compensation circuit.

It is convenient to understand that the start-up bias circuits are drawn together because the amplification compensation circuits cannot work alone. The amplifying circuit consists of an energy gap reference voltage circuit and three emitter followers (or current amplifiers), and the energy gap reference voltage circuit is formed by transistors Q15, Q16, Q17 and Q18 and resistors R12 and R13, so that fixed output can be realized and the effect of temperature cannot be influenced; the transistors Q12, Q13 and Q14 are three-stage emitter follower amplifying circuits, the upper part of the Q14 is connected with a current source Q4 in the bias circuit, so that a circuit taking the current source as an active load is formed, the amplifying capability of the transistor is greatly enhanced, the transistor Q13 is connected with a power supply, the lower resistors R11 and Q12 are connected with a current source Q3 in the bias circuit, the lower resistor Vout2 is connected, the three-stage emitter follower amplifying circuits are designed to be started by the bias circuit, the intermediate stage Q13 is started by the bias circuit if the bias circuit is also started, the bias circuit is subjected to too great current pressure, the circuit cannot be stabilized, and therefore the intermediate stage Q13 directly absorbs current from the power supply. The base electrode of the compensation capacitor C1 is connected with the negative end of the reference circuit, the collector electrodes of the transistors Q15 and Q17 are connected with the compensation capacitor C2, and the collectors of the transistors R13, R28 and R29 are connected with the compensation capacitor C1. The resistor R28 is a voltage clamping resistor, and the resistors R13 and R29 are output voltage sampling resistors.

The compensation circuit is composed of transistors Q6, Q7, Q26 and Q27 and resistors R22 and R23, wherein the transistors Q6 and Q7 form a proportion mirror current source, the current flowing through the transistor Q6 is several times to hundred times larger than the current flowing through the transistor Q7, the resistor R22 is consistent with the voltage level connected with the base level of the transistor Q26, therefore, the compensation of the I3 current can be completed by controlling the resistance value of the resistor R22, when the I3 current is small and the amplifying circuit cannot work normally, the value of the resistor R22 is adjusted, the Ib of the transistor Q26 is increased, the Q7 current is increased, the Q6 current is also several tens of hundred times larger due to the fact that Ic is beta Ib, and the current I3 is increased, otherwise, when the I3 current is large, the current I3 is compensated by adjusting the resistance value of the R22.

The transistors Q8 and Q9, the diode D1 and the resistors R24 and R27 form an output circuit module, and the final voltage stabilizing value of the whole circuit can be determined by adjusting the transistors Q8 and Q9. In the output circuit: the diode D1 is connected to the base electrode of the transistor Q9 in the positive direction, so that the base voltage of the transistor Q9 is increased, the transistor Q9 is normally turned on, and the transistors Q8 and Q9 can be used as Darlington composite transistors to normally work all the time. Transistor Q27 and resistor R7 are connected to the base of transistor Q8 to provide a bias for transistor Q8.

As shown in fig. 5, the temperature protection circuit module receives the signal of the bias circuit Q5 and detects the temperature of the whole circuit in real time through the current I3, wherein the transistor is a set negative temperature coefficient, and once the temperature is high to a certain degree, for example 155 ℃, the transistor is turned on, i.e. the current is fully introduced into the ground terminal, so as to protect the whole circuit from over-temperature.

For ease of illustration, a portion of the bias circuit, the compensation circuit, and the output circuit are depicted. The temperature protection circuit consists of transistors Q19, Q20, Q21 and Q22 and resistors R14, R15, R16 and R17. Transistors Q19, Q21 and resistor R14 are simultaneously controlled by current I5 generated by transistor Q5 in the bias circuit, and when the bias circuit provides a signal, Q19 and Q20 start to form a complementary transistor structure, and R14 plays a role in stabilizing the static working point of transistor Q20. R15 is the output resistance of the transistor Q20, the transistor Q21 and the resistor R16 thereof are added to provide signals for the base electrode of the transistor Q22 which is the most important for the over-temperature protection circuit, the transistor Q22 detects the temperature of I3, and when the temperature is higher than the set temperature, all current flows from the R17 below the transistor Q22, so that the stability of the circuit is ensured.

As shown in fig. 6 and 7, the safe working area module (current protection circuit module ) is used for detecting the current and the voltage of the circuit in real time, and once the current exceeds a set value or the voltage is overlarge, the current flows out from the corresponding circuit to the ground end, so that the large current does not pass through the compensation circuit and the output circuit, and the circuit is protected.

The safe operating area module comprises transistors Q23, Q24, Q25 and Q28, resistors R18, R19, R20, R21, R25 and R26, a compensation capacitor C3, voltage stabilizing tubes Z2, Z3, Z4, Z5, Z6 and Z7, and a base electrode of the transistor Q28 is connected below the voltage stabilizing tube Z7. When the I3 current exceeds the set point, the module may cause the current to flow from the collector to emitter branch of transistor Q23, R18 to the collector to emitter branch of transistor Q24, and resistor R20 to resistor R21 to the branch of transistor Q25 to shunt VOUT2, VOUT, respectively, where resistor R19 is the input resistance of transistors Q24 and Q25, making transistors Q24 and Q25 more stable. The three-branch shunt design ensures that the module has extremely strong shunt capacity, and can protect the compensation circuit module and the output circuit when large current surge occurs. Or when the power voltage is too high, the voltage stabilizing diode set by the module is gradually conducted due to the fact that the module is connected with other modules in parallel and the voltage is consistent, and when the whole voltage stabilizing diode is conducted, current directly flows into the ground through the loop of the module, and other modules are protected.

Fig. 2 is an overall circuit diagram of fig. 3-7, wherein all modules together form a complete voltage stabilizing circuit with multiple protection circuits.

As shown in fig. 8, the electrostatic protection module is correspondingly connected with the input end, the output end, the reference voltage end and the ground end of the voltage stabilizing integrated circuit shown in fig. 2, so as to perform electrostatic protection on each port, when the circuit does not work, the voltage stabilizing integrated circuit may encounter static with instantaneous large voltage up to several kilovolts, and at this time, the electrostatic protection module starts to work and absorbs static.

The electrostatic protection module comprises transistors Q29, Q30, Q31 and Q32, and the transistors Q29, Q30, Q31 and Q32 are mutually reversely connected to form two groups of reverse diodes for static resistance.

The circuit modules can all work independently, and various protection circuit modules can be partially modified to adapt to other circuits.

The circuit is to ensure that the voltage on the resistor R28 is a fixed value, and once the voltage of the resistor R28 is changed due to external fluctuation, the surplus current is sucked away by the amplifying compensation output circuit, so that the current flowing through the resistor R28 is unchanged, namely voltage stabilization is realized.

In the above embodiments, the transistor of the active device may be changed to an N-transistor or a P-transistor according to actual situations. In addition, the active device can also be an MOS transistor, the collector of the transistor corresponds to the source of the MOS transistor, the emitter of the transistor corresponds to the drain of the MOS transistor, and the base of the transistor corresponds to the gate of the MOS transistor. Or in another preferred embodiment, the active device can be an IGBT, and the base of the transistor corresponds to the gate of the IGBT.

Finally, it should be noted that: the above examples are only illustrative and the utility model includes, but is not limited to, the above examples, which need not and cannot be exhaustive of all embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. All embodiments meeting the requirements of the utility model are within the protection scope of the utility model.

Claims (10)

1. A high stability voltage regulator integrated circuit, comprising: the system comprises a starting bias circuit module, an amplifying compensation output circuit module, a temperature protection module, a current protection circuit module and a voltage protection circuit module;

the positive end of the starting bias circuit module is connected with the input voltage VIN end, and the negative end of the starting bias circuit module is connected with the reference power supply VOUT2 end; the negative terminals of the temperature protection module and the current protection circuit module are connected with the VOUT2 end of the reference power supply; the negative end of the voltage protection circuit module is grounded, and the power supply end is connected with the input voltage VIN end; the bias current output end is respectively connected with bias current input ends corresponding to the amplifying compensation output circuit module, the temperature protection module, the current protection circuit module and the voltage protection circuit module; the output ends of the temperature protection module and the current protection circuit module are connected with the corresponding ports of the amplifying compensation output circuit module, and the reference voltage output end of the amplifying compensation output circuit module is grounded through a voltage division sampling network.

2. The high stability voltage regulator integrated circuit of claim 1, wherein: the starting bias circuit module comprises resistors R1, R2, R3, R4, R5, R6, R8, R9 and R10, a voltage stabilizing diode Z1, PNP transistors Q1, Q2, Q3, Q4 and Q5 and NPN transistors Q10 and Q11;

one end of R1, R2, R3, R4, R5 and R6 is connected with an input voltage VIN end, the other end of R1 is connected with one end of R8 and a cathode of Z1, the other end of R2 is connected with an emitter of Q1, the other end of R3 is connected with an emitter of Q2, the other end of R4 is connected with an emitter of Q3, the other end of R5 is connected with an emitter of Q4, the other end of R6 is connected with an emitter of Q5, a collector of Q1 is connected with a collector of Q10, bases of Q1, Q2, Q3, Q4 and Q5, a base of Q10 is connected with a base of Q11, the other end of R8, a collector of Q2 and one end of R10, an anode of Z1 is connected with the other end of R9, an emitter of Q11 and an end of VOUT2, and collectors of Q3, Q4 and Q5 output bias currents I3, I4 and I5 respectively;

the transistor starts from Q11 and forms an image current mirror with Q10, Q1, Q2, Q3, Q4 and Q5;

the R2, R3, R4, R5 and R6 provide static working points for the transistors Q1, Q2, Q3, Q4 and Q5 respectively.

3. The high stability voltage regulator integrated circuit of claim 1, wherein: the amplifying compensation output circuit module comprises NPN transistors Q9, Q12, Q13, Q17, Q18, Q26 and Q27, PNP transistors Q6, Q7, Q8, Q14, Q15 and Q16, resistors R7, R11, R12, R13, R14, R22, R23, R24, R28 and R29, capacitors C1 and C2 and a diode D1;

the collector of the Q13 is connected with the emitter of the Q6 and the Q7, one end of the R7, the emitter of the Q8, the collector of the Q9 and the input power VIN end, the collector of the Q12 is connected with the corresponding bias current end, the emitter of the Q15 and the Q16, the collector of the Q6, the base of the Q26 and one end of the Q13 and one end of the R11, the emitter of the Q14 is connected with the corresponding bias current end and the base of the Q13, the base of the Q14 is connected with one end of the C1, one end of the C2, the collector of the Q15 and the collector of the Q17, the other end of the C2 is connected with one end of the R13, one end of the R28 and one end of the R29, the other end of the R29 is grounded, the emitter of the Q17 is connected with the other end of the R13, one end of the R12, the other end of the R12 is connected with the emitter of the Q18, the collector of the Q15 and the base of the Q16 are connected with the collector of the Q13, the collector of the Q7, the collector of the Q6 and the Q7, the emitter of the Q26 is connected with one end of the Q23, the other end of the emitter of the Q23 is connected with the collector of the R23, the emitter of the R23, the other end of the R27 and the emitter of the R27 is connected with the collector of the R9, the emitter of the R24 and the collector of the R24 and the emitter of the Q12;

the transistors Q12, Q13 and Q14 form a three-stage emitter follower amplifying circuit;

the transistors Q15, Q16, Q17 and Q18 and the resistors R12 and R13 form an energy gap reference voltage circuit;

the capacitors C1 and C2 are system stability compensation capacitors, and the resistor R28 is an output voltage sampling resistor;

the Q6 and Q7 form a proportion mirror current mirror, and the collector current of the Q6 is 1-500 times of that of the Q7.

4. The high stability voltage regulator integrated circuit of claim 1, wherein: the temperature protection module comprises NPN transistors Q20 and Q22, PNP transistors Q19 and Q21 and resistors R14, R15, R16 and R17;

the emitter of the Q19 and the Q21 are connected with the corresponding bias current end and one end of the R14, the base of the Q19 is connected with the base of the Q20, the collector of the Q20 is connected with the base of the Q21 and the other end of the R14, the emitter of the Q20 is connected with one end of the R15, the collector of the Q21 is connected with the base of the Q22 and one end of the R16, the collector of the Q22 is connected with the corresponding bias current end, the emitter of the Q22 is connected with one end of the R17, and the collector of the Q19 is connected with the other end of the R15, the other end of the R16, one end of the R17 and the vout2;

the Q22 is a negative temperature coefficient transistor used for detecting the temperature of the whole circuit.

5. The high stability voltage regulator integrated circuit of claim 1, wherein: the current protection module comprises NPN transistors Q23, Q24 and Q25, resistors R18, R19, R20 and R21 and a compensation capacitor C3;

the collector of the Q23 is connected with a corresponding bias current end, one end of the R18 and one end of the R20, the emitter of the Q23 is connected with the emitter and the VOUT2 end of the Q24, the base of the Q23 is connected with the collector of the Q24, the other end of the R18 and one end of the C3, the base of the Q24 is connected with the other end of the C3 and one end of the R19, the collector of the Q25 is connected with the other end of the R19 and one end of the R21, the base of the Q25 is connected with the other end of the R21 and the other end of the R20, and the emitter of the Q25 is connected with the VOUT end.

6. The high stability voltage regulator integrated circuit of claim 1, wherein: the voltage protection module comprises voltage stabilizing tubes Z2, Z3, Z4, Z5, Z6 and Z7, resistors R25 and R26 and an NPN transistor Q28, wherein the positive end of the NPN transistor Q28 is connected with a VIN end, and the lower end of the NPN transistor Q is connected with the ground;

the cathode of the Z2 is connected with the VIN end, the anode of the Z2 is connected with Z3 and Z4 in the same direction in series, then the anode of the Z5 is connected with Z6 and Z7 in the same direction in series through R25, then the anode of the Z5 is connected with one end of the R26 and the base electrode of the Q28, the other end of the R26 is connected with the emitter electrode and the grounding end of the Q28, and the collector electrode of the Q28 is connected with the corresponding bias current end;

the voltage stabilizing tubes Z2, Z3, Z4, Z5, Z6 and Z7 are voltage stabilizing tube groups, and the voltage stabilizing tube groups comprise 1-1000 voltage stabilizing tubes;

the positions of the voltage stabilizing tubes Z2, Z3, Z4, Z5, Z6, Z7 and the resistor R25 are not limited.

7. The high stability voltage regulator integrated circuit of claim 1, comprising: PNP transistors Q1, Q2, Q3, Q4, Q5, Q6, Q7, Q8, Q14, Q15, Q16, Q19, Q21, NPN transistors Q8, Q9, Q10, Q11, Q12, Q13, Q17, Q18, Q20, Q22, Q23, Q24, Q25, Q26, Q27, Q28, resistors R1, R2, R3, R4, R5, R6, R7, R8, R9, R10, R11, R12, R13, R14, R15, R16, R17, R18, R19, R20, R21, R22, R23, R24, R25, R26, R27, R28, R29, zener diodes Z1, Z2, Z3, Z4, Z5, Z6, capacitors C1, C2, C3, diode D1;

one end of R1, R2, R3, R4, R5, R6 and R7, a collector of Q13, emitters of Q6, Q7 and Q8, and a cathode of Z2 are connected with an input power source VIN end; the other end of R1 is connected with one end of R8 and the cathode of Z1, the other end of R2 is connected with the emitter of Q1, the other end of R3 is connected with the emitter of Q2, the other end of R4 is connected with the emitter of Q3, the other end of R5 is connected with the emitter of Q4, the other end of R6 is connected with the emitter of Q5, the other end of R7 is connected with the base of Q8 and the collector of Q27, the base of Q1, the collector of Q10, the base of Q3, the base of Q4 and the base of Q5 are connected in series in sequence, the base of Q7, the collector of Q7 and the collector of Q26 are connected, the emitter of Q26 is connected with one end of R23, the base of Q27 is connected with the other end of R22, the emitter of Q27 is connected with the other end of R23, the cathode of D1, one end of R24 is connected with the base of Q8, the other end of R7 and the collector of Q27 are connected with the collector of Q8, the base of Q1 is connected with the anode of Z2, Z3 and Z4 are connected in series in sequence in the same direction, the anode of Z25 is connected with the other end of Z25 and the collector of Q9 is connected with the anode of Z5, the base of Z26 is connected with the other end of Z26 and the end of Z26 is connected with the end of Z28 in series, the end of Z26 is connected with the end of Z28; the other end of R8 is connected with the collector of Q2, one end of R10 and the bases of Q10 and Q11, the emitter of Q10 is connected with one end of R9, and the collector of Q11 is connected with the other end of R10 and the bases of Q19 and Q20; the collector of Q12 is connected with the collector of Q3, the emitters of Q15 and Q16, the collectors of Q22 and Q23, one end of R18, one end of R20, one end of R22, the collector of Q6 and the collector of Q28; the base of Q12 is connected with the emitter of Q13 and one end of R11, the base of Q13 is connected with the collector of Q4 and the emitter of Q14, the base of Q14 is connected with one end of C1, one end of C2, the collectors of Q15 and Q17, the emitter of Q17 is connected with one end of R12 and one end of R13, the emitter of Q18 is connected with the other end of R12, the collector of Q18 is connected with the collector of Q16 and the bases of Q15 and Q16; the other end of C2 is connected with the other end of R13, the other end of R29 and one end of R26, the other end of R29 is grounded, the emitter of Q19 is connected with the collector of Q5, one end of R14 and the emitter of Q21, the collector of Q20 is connected with the other end of R14 and the base of Q21, the emitter of Q20 is connected with one end of R15, the collector of Q21 is connected with one end of R16 and the base of Q22, and the collector of Q22 is connected with one end of R17; the base electrode of Q23 is connected with the other end of R18, one end of C3 and the collector electrode of Q24, the base electrode of Q24 is connected with the other end of C3 and one end of R19, the collector electrode of Q25 is connected with the other end of R19 and one end of R21, and the base electrode of Q25 is connected with the other end of R21 and the other end of R20; the emitter of the Q25 is connected with the emitter of the Q9 and one end of the R27, and the other end of the R27 is connected with the output voltage VOUT end; the anode of Z1 is connected with the other end of R9, the emitter of Q11, the emitter of Q12, the other end of R11, the collector of Q14, the other ends of C1, the bases of Q17 and Q18, the collector of Q19, the other end of R15, the other end of R16, the other end of R17, the emitters of Q23 and Q24, the other end of R28 and the VOUT 2.

8. A high stability voltage regulator integrated circuit as defined in any one of claims 2-7, wherein: the resistor is of the type of an epitaxial layer resistor, a base resistor, a collector resistor or an emitter resistor.

9. A high stability voltage regulator integrated circuit as defined in any one of claims 2-7, wherein: and all active devices in the integrated circuit are transistors or all field effect transistors or all MOS or all IGBT.

10. The high-stability voltage-stabilizing integrated circuit according to claim 1, comprising an electrostatic protection module, wherein the corresponding port of the electrostatic protection module is connected with the corresponding input terminal, output terminal, reference voltage terminal and grounding terminal of the voltage-stabilizing integrated circuit;

the electrostatic protection module consists of NPN transistors Q29 and Q31 and PNP transistors Q30 and Q32;

the collector of the transistor Q29 is connected with the collector of the transistor Q30, the base of the transistor Q30 and the VIN end, the collector of the transistor Q30 is connected with the collector of the transistor Q31 and the VOUT end, the emitter and the base of the transistor Q31 are connected with the emitter, the base and the VOUT2 end of the transistor Q32, and the collector of the transistor Q32 is grounded.