CN220643341U - Thermal field structure for growth of large-size sapphire crystal - Google Patents
Thermal field structure for growth of large-size sapphire crystal Download PDFInfo
- Publication number
- CN220643341U CN220643341U CN202322226391.6U CN202322226391U CN220643341U CN 220643341 U CN220643341 U CN 220643341U CN 202322226391 U CN202322226391 U CN 202322226391U CN 220643341 U CN220643341 U CN 220643341U
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- thermal field
- heater
- sapphire crystal
- crucible
- field structure
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- 239000013078 crystal Substances 0.000 title claims abstract description 26
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 25
- 239000010980 sapphire Substances 0.000 title claims abstract description 25
- 238000004321 preservation Methods 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000009413 insulation Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000010304 firing Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011094 fiberboard Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a thermal field structure for large-size sapphire crystal growth, which relates to the technical field of crystal growth and comprises a furnace body, a crucible, heating equipment, lifting equipment and a heat preservation layer, wherein the top of the furnace body is provided with a furnace cover; the crucible is arranged in the furnace body; the heating device comprises a side heater and a bottom heater which are arranged outside the crucible; the lifting device is arranged at the top of the furnace cover and is connected with the side heater; the heat preservation is located the outside of firing equipment. According to the thermal field structure for growing the large-size sapphire crystal, the lifting structure of the side heater is arranged, so that the thermal field temperature gradient in the side direction can be conveniently and flexibly adjusted, and the formation of the large-size sapphire crystal with better quality is facilitated.
Description
Technical Field
The utility model relates to the technical field of crystal growth, in particular to a thermal field structure for large-size sapphire crystal growth.
Background
In the thermal field structure for large-size sapphire crystal growth, the general position of a heater forming a thermal field is fixed, the thermal field temperature gradient in the lateral direction is inconvenient to flexibly adjust, the growth of the large-size sapphire crystal is not good enough, and the prior art lacks a structure for conveniently adjusting the position of the heater to flexibly adjust the thermal field temperature gradient.
Disclosure of Invention
In order to solve the problems, the utility model provides a thermal field structure for growing large-size sapphire crystals, which is provided with a lifting structure of a side heater, so that the thermal field temperature gradient in the side direction can be conveniently and flexibly adjusted, and the thermal field structure is favorable for forming high-quality large-size sapphire crystals.
The technical scheme of the utility model is as follows:
a thermal field structure for large-sized sapphire crystal growth, comprising:
the top of the furnace body is provided with a furnace cover;
the crucible is arranged in the furnace body;
the heating device comprises a side heater and a bottom heater which are arranged outside the crucible;
the lifting device is arranged at the top of the furnace cover and is connected with the side heater;
the heat preservation layer is arranged on the outer side of the heating equipment.
In further technical scheme, lifting device includes connecting plate, lead screw and spliced pole, the middle part of connecting plate is equipped with the screw hole, the lead screw passes the screw hole vertically and rotatable connect in the top of bell, the bottom of connecting plate is located to the spliced pole, and the terminal of spliced pole passes bell and insulating layer and is connected with the side heater.
In a further technical scheme, the heat preservation comprises a lower heat preservation layer arranged at the bottom of the bottom heater, a side heat preservation layer arranged at the outer side of the side heater and an upper heat preservation layer arranged at the bottom of the furnace cover.
In a further technical scheme, an upper heater is arranged at the bottom of the upper heat preservation layer.
In a further technical scheme, a supporting shaft of the crucible is arranged between the bottom of the furnace body and the crucible.
In a further technical scheme, a tray is arranged at the top of the supporting shaft.
The beneficial effects of the utility model are as follows:
1. in the sapphire growth process, the side heater is separated from the bottom heater at the bottom of the crucible as an independent heating structure, lifting equipment arranged on the furnace cover extends to the inner side heater of the furnace body, the lifting equipment can move the side heater up and down to flexibly adjust the temperature gradient of a thermal field in the side direction, and the growth of high-quality large-size sapphire crystals can be promoted;
2. the upper heater is arranged, so that the sapphire crystal can have larger radial temperature gradient and axial temperature gradient in the growth process, and an upper heat insulation layer is arranged above the upper heater, so that better heat insulation performance is provided.
Drawings
FIG. 1 is a schematic structural diagram of a thermal field structure for large-size sapphire crystal growth according to an embodiment of the present utility model;
reference numerals illustrate:
10. a furnace body; 11. a furnace cover; 20. a crucible; 31. a side heater; 32. a bottom heater; 33. a top heater; 41. a connecting plate; 42. a screw rod; 43. a connecting column; 44. a drive handle; 51. a lower heat-insulating layer; 52. a side heat-insulating layer; 53. an upper heat preservation layer; 60. a support shaft; 61. and a tray.
Detailed Description
Embodiments of the present utility model are further described below with reference to the accompanying drawings.
Examples:
as shown in FIG. 1, a thermal field structure for large-size sapphire crystal growth comprises a furnace body 10, a crucible 20, heating equipment, lifting equipment and a heat preservation layer, wherein a furnace cover 11 is arranged at the top of the furnace body 10; the crucible 20 is arranged in the furnace body 10; the heating apparatus includes a side heater 31 and a bottom heater 32 provided outside the crucible 20; the lifting device comprises a connecting plate 41, a screw rod 42 and a connecting column 43, wherein a threaded hole is formed in the middle of the connecting plate 41, the screw rod 42 passes through the threaded hole to be vertically and rotatably connected to the top of the furnace cover 11, a driving handle 44 can be arranged at the top of the screw rod 42, so that the screw rod 42 can be conveniently connected with an external driving device to rotate, wherein in order to ensure that a seed rod for crystal growth penetrates into the furnace body 10 from the middle of the furnace cover 11, the connecting position of the screw rod 42 and the furnace cover 11 deviates from the middle of the furnace cover 11, the connecting column 43 is arranged at the bottom of the connecting plate 41, and the tail end of the connecting column 43 passes through the furnace cover 11 and a heat insulation layer to be connected with the side heater 31; the heat preservation layer is arranged on the outer side of the heating equipment; a supporting shaft 60 for the crucible 20 is provided between the bottom of the furnace body 10 and the crucible 20, and a tray 61 for supporting the crucible 20 is provided on the top of the supporting shaft 60.
The working principle of the technical scheme is as follows:
in order to flexibly adjust the thermal field temperature gradient in the lateral direction, when large-size sapphire grows in the crucible 20, the lifting device rotates the driving handle 44 by means of an external rotation driving device, so that the screw rod 42 is driven to rotate, the screw rod 42 is meshed with the threaded hole on the connecting plate 41 when rotating, the connecting plate 41 ascends or descends along with the forward or reverse rotation of the screw rod 42, and the connecting column 43 at the bottom of the connecting plate 41 can pull the side heater 31 in the furnace body 10 to lift, so that the thermal field temperature gradient in the lateral direction can be flexibly adjusted.
In another embodiment, as shown in fig. 1, the heat-insulating layers include a lower heat-insulating layer 51 disposed at the bottom of the bottom heater 32, a side heat-insulating layer 52 disposed outside the side heater 31, and an upper heat-insulating layer 53 disposed at the bottom of the furnace cover 11, where the heat-insulating layers can provide a constant growth temperature for sapphire crystal growth, and the heat-insulating layers can use zirconia refractory bricks and alumina fiber board backing.
In another embodiment, as shown in fig. 1, an upper heater is arranged at the bottom of the upper heat insulation layer 53, so that a larger radial temperature gradient and an axial temperature gradient of the sapphire crystal during the growth process can be ensured.
The foregoing examples merely illustrate specific embodiments of the utility model, which are described in greater detail and are not to be construed as limiting the scope of the utility model. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the utility model, which are all within the scope of the utility model.
Claims (6)
1. A thermal field structure for large-size sapphire crystal growth, comprising:
the top of the furnace body is provided with a furnace cover;
the crucible is arranged in the furnace body;
the heating device comprises a side heater and a bottom heater which are arranged outside the crucible;
the lifting device is arranged at the top of the furnace cover and is connected with the side heater;
the heat preservation layer is arranged on the outer side of the heating equipment.
2. The thermal field structure for large-size sapphire crystal growth according to claim 1, wherein the lifting device comprises a connecting plate, a screw rod and a connecting column, a threaded hole is formed in the middle of the connecting plate, the screw rod passes through the threaded hole to be vertically and rotatably connected to the top of the furnace cover, the connecting column is arranged at the bottom of the connecting plate, and the tail end of the connecting column passes through the furnace cover and the heat insulation layer to be connected with the side heater.
3. The thermal field structure for large-size sapphire crystal growth of claim 1, wherein the heat insulating layer comprises a lower heat insulating layer arranged at the bottom of the bottom heater, a side heat insulating layer arranged at the outer side of the side heater and an upper heat insulating layer arranged at the bottom of the furnace cover.
4. The thermal field structure for large-sized sapphire crystal growth of claim 3, wherein the bottom of the upper insulating layer is provided with an upper heater.
5. The thermal field structure for large-size sapphire crystal growth according to claim 1, wherein a supporting shaft of the crucible is provided between the bottom of the furnace body and the crucible.
6. The thermal field structure for large-sized sapphire crystal growth of claim 5, wherein the top of the support shaft is provided with a tray.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322226391.6U CN220643341U (en) | 2023-08-18 | 2023-08-18 | Thermal field structure for growth of large-size sapphire crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322226391.6U CN220643341U (en) | 2023-08-18 | 2023-08-18 | Thermal field structure for growth of large-size sapphire crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220643341U true CN220643341U (en) | 2024-03-22 |
Family
ID=90264021
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322226391.6U Active CN220643341U (en) | 2023-08-18 | 2023-08-18 | Thermal field structure for growth of large-size sapphire crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220643341U (en) |
-
2023
- 2023-08-18 CN CN202322226391.6U patent/CN220643341U/en active Active
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