CN220605776U - High-power-density electric energy conversion device - Google Patents
High-power-density electric energy conversion device Download PDFInfo
- Publication number
- CN220605776U CN220605776U CN202322300242.XU CN202322300242U CN220605776U CN 220605776 U CN220605776 U CN 220605776U CN 202322300242 U CN202322300242 U CN 202322300242U CN 220605776 U CN220605776 U CN 220605776U
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- circuit board
- circuit
- energy conversion
- electrical energy
- high power
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 31
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000003990 capacitor Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 238000012423 maintenance Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Abstract
The utility model relates to a high power density electric energy conversion device, comprising: the semiconductor power device comprises a first circuit board, a second circuit board, a first jack and a plurality of second jacks, wherein the first circuit board is integrated with a semiconductor power device and a signal acquisition circuit; the second circuit board is provided with pins, the second circuit board is inserted into the first jacks through the pins, the second circuit board and the first circuit board are arranged at intervals, a driving circuit is integrated on the second circuit board, and the driving circuit drives the power device to work; the electronic device modules are inserted into the second jacks, the electronic device modules are multiple, the electronic devices are arranged in one-to-one correspondence with the second jacks, and the electronic device modules comprise capacitors or inductors. The electromagnetic interference is small, the overhaul and the replacement are convenient, and the heat dissipation performance is good.
Description
Technical Field
The utility model relates to the technical field of power circuits, in particular to a high-power-density electric energy conversion device.
Background
Currently, for an electric energy conversion module, the electric energy conversion module generally comprises a power circuit, a signal acquisition circuit and a driving circuit, wherein the driving circuit drives the power circuit to work, and the signal acquisition circuit acquires the output of the power circuit.
However, during actual use, the following problems occur:
firstly, because the power circuit, the signal acquisition circuit and the driving circuit are arranged on the same circuit board, when the circuit board is damaged, the maintenance and the replacement are inconvenient;
secondly, electromagnetic interference can be generated in the working process of the driving circuit, and for a third-generation semiconductor power device, the working of the power circuit can be influenced by larger electromagnetic interference, so that the performance of the whole circuit is influenced;
thirdly, a plurality of circuits are arranged on the same circuit board, so that more heat is easy to generate, and the more heat can cause the phenomenon of temperature drift of electronic components.
Disclosure of Invention
Therefore, the utility model aims to overcome the technical defects that the driving circuit has large interference to the power device and the electronic component is easy to generate temperature drift in the prior art.
In order to solve the above technical problems, the present utility model provides a high power density electric energy conversion device, which is characterized by comprising:
the semiconductor power device comprises a first circuit board, a second circuit board, a first jack and a plurality of second jacks, wherein the first circuit board is integrated with a semiconductor power device and a signal acquisition circuit;
the second circuit board is provided with pins, the second circuit board is inserted into the first jacks through the pins, the second circuit board and the first circuit board are arranged at intervals, a driving circuit is integrated on the second circuit board, and the driving circuit drives the power device to work;
the electronic device modules are inserted into the second jacks, the electronic device modules are multiple, the electronic devices are arranged in one-to-one correspondence with the second jacks, and the electronic device modules comprise capacitors or inductors.
In one embodiment of the present utility model, a surface of the second circuit board adjacent to the first circuit board is coated with a metal film to isolate electromagnetic interference.
In one embodiment of the present utility model, the metal film is a steel film, a copper film, or an aluminum film.
In one embodiment of the present utility model, the first circuit board is further provided with a bridgeless PLC circuit and/or a full bridge circuit.
In one embodiment of the utility model, the electronics module further comprises a transformer.
In one embodiment of the utility model, the electronics module further comprises a signal generating source.
In one embodiment of the utility model, the signal generating source is an MCU or a DSP.
In one embodiment of the utility model, the semiconductor power device is a wafer level package.
In one embodiment of the present utility model, the semiconductor power device is a field effect transistor.
In one embodiment of the present utility model, the first circuit board has a plurality of semiconductor power devices integrated thereon.
Compared with the prior art, the technical scheme of the utility model has the following advantages:
1. in the utility model, the semiconductor power device and the signal acquisition circuit are integrated on the first circuit board, the driving circuit is integrated on the second circuit board, the second circuit board is provided with the pins, and the second circuit board is inserted on the first jack on the first circuit board through the pins, so that the electric connection between the first circuit board and the second circuit board is realized, and the electric connection between the driving circuit on the second circuit board and the semiconductor power device on the first circuit board is realized.
2. Because the first circuit board and the second circuit board are arranged at intervals, when the driving circuit on the second circuit board works, the electromagnetic interference of the driving circuit on the semiconductor power device can be reduced.
3. In the prior art, the driving circuit is easy to generate heat, and the work of the semiconductor power device is easy to be influenced under the condition of higher temperature; likewise, the heat generated by the driving circuit does not affect the operation of other electronic components on the first circuit board.
4. According to the utility model, the driving circuits with different types and structures can be replaced by replacing the second circuit board, so that the flexibility is high.
5. The first circuit board is provided with the second jack, the second jack can be used for inserting the electronic device module, and as the first circuit board only needs to integrate the semiconductor power device and the signal acquisition circuit, the production efficiency can be improved, and the capacitor inductor is inserted into the second jack, so that the maintenance and the replacement are convenient.
Drawings
In order that the utility model may be more readily understood, a more particular description of the utility model will be rendered by reference to specific embodiments thereof that are illustrated in the appended drawings.
FIG. 1 is a schematic diagram of the structure of the present utility model;
FIG. 2 is a schematic diagram of a first circuit board;
fig. 3 shows a power conversion topology, wherein (a) is a first power conversion topology embodiment, (b) is a second power conversion topology embodiment, (c) is a third power conversion topology embodiment, and (d) is a fourth power conversion topology embodiment;
FIG. 4 is a schematic diagram of a signal acquisition circuit;
fig. 5 is a schematic diagram of a full bridge circuit.
Description of the specification reference numerals: 10. a first circuit board; 11. a semiconductor power device; 12. a signal acquisition circuit; 13. a first jack; 14. a bridgeless PFC circuit; 15. a second jack; 16. a full bridge circuit; 20. a second circuit board; 30. an electronics module.
Detailed Description
Certain terms are used throughout the description and claims to refer to particular components. It will be appreciated by those of ordinary skill in the art that different terms may be used to refer to the same component. The description and claims do not take the form of an element differentiated by name, but rather by functionality. As used throughout the specification and claims, the word "comprise" is an open-ended term, and thus should be interpreted to mean "include, but not limited to. By "substantially" is meant that within an acceptable error range, a person skilled in the art can solve the technical problem within a certain error range, substantially achieving the technical effect. Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 1-2, the present utility model discloses a high power density power conversion apparatus, which includes a first circuit board 10, a second circuit board 20, and an electronic device module 30.
The first circuit board 10 is integrated with a semiconductor power device 11 and a signal acquisition circuit 12, and a first jack 13 and a plurality of second jacks 15 on the first circuit board 10.
The second circuit board 20 is provided with pins, the second circuit board 20 is inserted on the first jack 13 through the pins, the second circuit board 20 and the first circuit board 10 are arranged at intervals, and a driving circuit is integrated on the second circuit board 20 and drives the power device to work.
The electronic device modules 30 are inserted into the second jacks 15, the electronic device modules 30 are multiple, the electronic devices are arranged in one-to-one correspondence with the second jacks 15, and the electronic device modules 30 comprise capacitors or inductors.
The working principle of the utility model is as follows: in the utility model, the semiconductor power device 11 and the signal acquisition circuit 12 are integrated on the first circuit board 10, the driving circuit is integrated on the second circuit board 20, pins are arranged on the second circuit board 20, and the second circuit board 20 is inserted on the first jack 13 on the first circuit board 10 through the pins, so that the electrical connection between the first circuit board 10 and the second circuit board 20 is realized, and the electrical connection between the driving circuit on the second circuit board 20 and the semiconductor power device 11 on the first circuit board 10 is realized.
The utility model has the following advantages:
first, because the first circuit board 10 and the second circuit board 20 are arranged at intervals, when the driving circuit on the second circuit board 20 works, the electromagnetic interference of the driving circuit on the semiconductor power device 11 can be reduced.
Secondly, in the prior art, the driving circuit is easy to generate heat, and the work of the semiconductor power device 11 is easy to be affected under the condition of higher temperature, in the utility model, because the semiconductor power device 11 and the driving circuit are respectively positioned on two circuit boards, the first circuit board 10 and the second circuit board 20 are arranged at intervals, the air interval between the first circuit board 10 and the second circuit board 20 can reduce heat transfer, thereby ensuring the stable work of the semiconductor power device 11; likewise, the heat generated by the driving circuit does not affect the operation of other electronic components on the first circuit board 10.
Thirdly, the driving circuit composed of different models and structures can be replaced by replacing the second circuit board 20, so that the flexibility is high.
Fourth, the second jack 15 is disposed on the first circuit board 10, the second jack 15 can be used for inserting the electronic device module 30, and since the semiconductor power device 11 and the signal acquisition circuit 12 are only required to be integrated on the first circuit board 10, the production efficiency can be improved, and the capacitor and the inductor are inserted on the second jack 15, so that the maintenance and the replacement are convenient.
Further, a surface of the second circuit board 20 adjacent to the first circuit board 10 is coated with a metal film to isolate electromagnetic interference. The metal film can shield electromagnetic signals generated by the driving circuit, so that the working stability of the semiconductor power device 11 is ensured. The metal film is a steel film, a copper film or an aluminum film.
The first circuit board 10 is also provided with a bridgeless PLC circuit and/or a full bridge circuit 16. These circuits are electrically connected to the semiconductor power device 11. In the process of manufacturing the first circuit board 10, the semiconductor power device 11, the signal acquisition circuit 12, the bridgeless PLC circuit and/or the full bridge circuit 16 are integrated on the first circuit board 10.
The electronics module 30 also includes a transformer. The electronics module 30 also includes a signal generating source. The signal generating source is MCU or DSP. These electronic device modules 30 are not easily integrated on the first circuit board 10, and therefore, the electronic device modules 30 are electrically connected to the first circuit board 10 by being inserted into the second insertion holes 15 and soldered.
Further, the semiconductor power device 11 is a wafer level package. The semiconductor power device 11 is a field effect transistor. The first circuit board 10 is integrated with a plurality of semiconductor power devices 11, so that the layout is reasonable, and the power circuit design is convenient.
The technical scheme of the utility model is further described and explained below with reference to specific embodiments.
Referring to fig. 3, four different topologies of the power conversion topology of the present utility model are shown. Fig. 3 (a) is a power conversion topology embodiment one, fig. 3 (b) is a power conversion topology embodiment two, fig. 3 (c) is a power conversion topology embodiment three, and fig. 3 (d) is a power conversion topology embodiment four.
Wherein, the power conversion topological graph in FIG. 3 performs power module normalization design according to the power conversion topological structure; carrying out normalized design on voltage and current signals required to be acquired in power conversion, and thoroughly realizing separation design of power and analog signals; the power transformer and the inductor are normalized by means of a planar transformer or a sandwich flat wire scheme.
Referring to fig. 4, a schematic diagram of the signal acquisition circuit 12 is shown, wherein (a) is a voltage sampling circuit, (b) is a current sampling circuit, and (c) is a temperature sampling circuit.
Fig. 5 is a schematic diagram of a full bridge circuit 16, which is also integrated on the first circuit board 10.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations and modifications of the present utility model will be apparent to those of ordinary skill in the art in light of the foregoing description. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the utility model.
Claims (10)
1. A high power density electrical energy conversion device, comprising:
the semiconductor power device comprises a first circuit board, a second circuit board, a first jack and a plurality of second jacks, wherein the first circuit board is integrated with a semiconductor power device and a signal acquisition circuit;
the second circuit board is provided with pins, the second circuit board is inserted into the first jacks through the pins, the second circuit board and the first circuit board are arranged at intervals, a driving circuit is integrated on the second circuit board, and the driving circuit drives the power device to work;
the electronic device modules are inserted into the second jacks, the electronic device modules are multiple, the electronic devices are arranged in one-to-one correspondence with the second jacks, and the electronic device modules comprise capacitors or inductors.
2. The high power density electrical energy conversion device of claim 1, wherein a side of the second circuit board adjacent to the first circuit board is coated with a metal film to isolate electromagnetic interference.
3. The high power density electrical energy conversion device of claim 2, wherein the metal film is a steel film, a copper film, or an aluminum film.
4. The high power density electrical energy conversion device of claim 1, wherein the first circuit board is further provided with a bridgeless PLC circuit and/or a full bridge circuit.
5. The high power density electrical energy conversion device of claim 1, wherein the electronics module further comprises a transformer.
6. The high power density electrical energy conversion device of claim 1, wherein the electronics module further comprises a signal generating source.
7. The high power density electrical energy conversion device of claim 6, wherein the signal generating source is an MCU or DSP.
8. The high power density electrical energy conversion apparatus of claim 1 wherein the semiconductor power device is a wafer level package.
9. The high power density electrical energy conversion apparatus of claim 1 wherein the semiconductor power device is a field effect transistor.
10. The high power density electrical energy conversion device as recited in any one of claims 1-9, wherein the first circuit board has a plurality of semiconductor power devices integrated thereon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322300242.XU CN220605776U (en) | 2023-08-25 | 2023-08-25 | High-power-density electric energy conversion device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322300242.XU CN220605776U (en) | 2023-08-25 | 2023-08-25 | High-power-density electric energy conversion device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220605776U true CN220605776U (en) | 2024-03-15 |
Family
ID=90178279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322300242.XU Active CN220605776U (en) | 2023-08-25 | 2023-08-25 | High-power-density electric energy conversion device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220605776U (en) |
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2023
- 2023-08-25 CN CN202322300242.XU patent/CN220605776U/en active Active
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