CN220455458U - Withstand voltage testing device of semiconductor discrete device - Google Patents
Withstand voltage testing device of semiconductor discrete device Download PDFInfo
- Publication number
- CN220455458U CN220455458U CN202322093029.6U CN202322093029U CN220455458U CN 220455458 U CN220455458 U CN 220455458U CN 202322093029 U CN202322093029 U CN 202322093029U CN 220455458 U CN220455458 U CN 220455458U
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- testing device
- withstand voltage
- pressure
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 230000007246 mechanism Effects 0.000 claims abstract description 24
- 244000309464 bull Species 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 238000009413 insulation Methods 0.000 abstract 1
- 230000003068 static effect Effects 0.000 description 19
- 230000005611 electricity Effects 0.000 description 17
- 238000007599 discharging Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000029087 digestion Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Testing Of Individual Semiconductor Devices (AREA)
- Testing Relating To Insulation (AREA)
Abstract
The utility model relates to the technical field of semiconductor discrete devices, and discloses a withstand voltage testing device of a semiconductor discrete device, which comprises a bottom plate, wherein the top of the bottom plate is fixedly connected with a withstand voltage testing device body, the back surface of the withstand voltage testing device body is provided with an electrostatic discharge mechanism, and the inside of the withstand voltage testing device body is provided with a positioning connecting mechanism; the positioning and connecting mechanism comprises: the insulation anti-slip pad is fixedly connected to the bottom of the bottom plate, and a base plate is arranged in the pressure-resistant testing device body. This withstand voltage testing arrangement of discrete device of semiconductor can effectively peg graft the location framework through setting up the constant head tank to utilize the location framework to carry out effective spacing effect that reaches the location connection to the pin, its baffle and spacer can prevent effectively that the location framework from droing, and its positioning bolt can carry out threaded connection to insulating slipmat, and overall structure is simple, conveniently dismantles and installs.
Description
Technical Field
The utility model relates to the technical field of semiconductor discrete devices, in particular to a withstand voltage testing device of a semiconductor discrete device.
Background
Semiconductor discrete devices, generally referred to as semiconductor transistor diodes, semiconductor triodes, transistors and semiconductor special devices, electronic products are divided into "conductors" and "insulators" according to their conductivity, the semiconductor components are further divided into "discrete" and "integrated" in the form of packages, such as: diodes, transistors, etc.; the voltage withstand test device is an instrument for measuring voltage withstand strength, can intuitively, accurately, quickly and reliably test the electrical safety performance indexes such as breakdown voltage, leakage current and the like of various tested objects, can be used as a tributary high-voltage source for testing components and the performance of the whole machine, is improved and perfected by combining the actual use conditions of a plurality of users in China on the basis of absorption and digestion international advanced voltage withstand test, has the advantages that the test voltage, the leakage current test and the time are all digital display, the cut-off current can be continuously and randomly set according to different safety standards and different requirements of the users, the functions are more abundant and practical, the leakage current display can reflect the actual value of the leakage current of the tested objects, and the voltage withstand quality in different batches of similar products or different manufacturer products can be compared, and the safety performance of the product is guaranteed.
According to China patent, "a withstand voltage testing device of a semiconductor discrete device", and the publication number is: the pressure-resistant test device comprises a pressure-resistant test device main body, wherein the outer surface of the front end of the pressure-resistant test device main body is fixedly connected with a pressure-resistant test device control area, the outer surface of the front end of the pressure-resistant test device main body is fixedly connected with a pressure-resistant test device data display area, the pressure-resistant test device control area is positioned at one end of the pressure-resistant test device data display area, the outer surfaces of the two ends of the pressure-resistant test device main body are fixedly connected with a portable mechanism, and the outer surface of the lower end of the multifunctional pad is fixedly connected with a multifunctional pad. According to the pressure-resistant testing device for the semiconductor discrete device, the pressure-resistant testing device is conveniently carried and moved through the portable mechanism, the insulating pad is arranged at the bottom end of the pressure-resistant testing device all the time through the multifunctional pad, the multifunctional pad has an anti-slip effect, the stability of the pressure-resistant testing device can be improved, and a better application prospect is brought.
However, in practical use, static electricity generated in the device may affect the testing accuracy of the device, and the device is more convenient to mount and dismount, so that the problem of inconvenient mounting and dismounting needs to be solved. Therefore, a voltage withstanding test device for semiconductor discrete devices is needed.
Disclosure of Invention
(one) solving the technical problems
Aiming at the defects of the prior art, the utility model provides a withstand voltage testing device of a semiconductor discrete device.
(II) technical scheme
In order to achieve the above purpose, the present utility model provides the following technical solutions: the voltage withstand testing device of the semiconductor discrete device comprises a bottom plate, wherein the top of the bottom plate is fixedly connected with a voltage withstand testing device body, the back surface of the voltage withstand testing device body is provided with an electrostatic discharge mechanism, and the inside of the voltage withstand testing device body is provided with a positioning connecting mechanism;
the positioning and connecting mechanism comprises: the anti-skid device comprises an insulating anti-skid pad, wherein the insulating anti-skid pad is fixedly connected to the bottom of a bottom plate, two base plates are arranged in the pressure-resistant testing device body, the base plates are respectively and fixedly connected to the bottom of the inner wall of the pressure-resistant testing device body, one ends of a plurality of pins are fixedly connected to the top of the base plates, and the other ends of the pins penetrate through the side face of the pressure-resistant testing device body and extend outwards.
Preferably, a plurality of constant head tank has been seted up at the top of bottom plate, the inside swing joint of constant head tank has the one end of pin, the movable slot has been seted up to the inside of constant head tank, the inside grafting of movable slot has the location framework, a plurality of baffle is installed on the right side of bottom plate, the spacer bush has been seted up on the right side of baffle, the top of spacer bush pass through positioning bolt with the top threaded connection of insulating slipmat. The positioning frame can be effectively inserted and connected through the positioning groove, the pins can be effectively limited by the positioning frame to achieve the positioning connection effect, the baffle and the positioning sleeve can effectively prevent the positioning frame from falling off, the positioning bolt can be in threaded connection with the insulating anti-slip pad, and the positioning frame is simple in integral structure and convenient to detach and install.
Preferably, the caliber of the inner part of the positioning frame body is matched with the caliber of one end of the pin.
Preferably, the electrostatic discharge mechanism includes: the mounting plate is fixedly connected to the back of the pressure-resistant testing device body, four conducting plates are mounted at the bottom of the mounting plate, and the four conducting plates respectively penetrate through the back of the pressure-resistant testing device body in a fixed mode and extend towards the inside of the pressure-resistant testing device body. The static electricity changed in the pressure-resistant testing device body can be effectively led out outwards by arranging the conducting plate in the static electricity discharging mechanism.
Preferably, the back of the conducting plate is fixedly connected with a conducting plate, a connecting cylinder is mounted on the back of the conducting plate, and two conducting piles are arranged in the connecting cylinder. Through setting up the mutually supporting of conducting plate and conductive stake, can effectively lead static ground, discharge static.
Preferably, the top of withstand voltage testing arrangement body is provided with waterproof cover, two storage tanks have been seted up at the top of waterproof cover, two the inside of storage tank articulates through the round pin axle has the bull stick, the outer wall fixedly connected with pull rod of bull stick. Can effectively waterproof the top of device through setting up waterproof cover to can utilize the lifting rod to mention wholly, conveniently carry.
(III) beneficial effects
Compared with the prior art, the utility model provides a withstand voltage testing device of a semiconductor discrete device, which has the following beneficial effects:
1. this withstand voltage testing arrangement of discrete device of semiconductor can effectively peg graft the location framework through setting up the constant head tank to utilize the location framework to carry out effective spacing effect that reaches the location connection to the pin, its baffle and spacer can prevent effectively that the location framework from droing, and its positioning bolt can carry out threaded connection to insulating slipmat, and overall structure is simple, conveniently dismantles and installs.
2. According to the withstand voltage testing device for the semiconductor discrete device, static electricity changed in the withstand voltage testing device body can be effectively led out through the conducting plate in the static electricity discharging mechanism, and the static electricity can be effectively led to the ground through the mutual matching of the conducting plate and the conducting pile, so that the static electricity is discharged.
Drawings
The accompanying drawings are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate the utility model and together with the embodiments of the utility model, serve to explain the utility model. In the drawings:
FIG. 1 is a perspective view of the present utility model;
FIG. 2 is a rear view of the present utility model;
fig. 3 is a top view of the present utility model.
In the figure: 1. a bottom plate; 2. a pressure-resistant testing device body; 3. an electrostatic discharge mechanism; 4. positioning and connecting mechanisms; 5. a waterproof cover; 6. a storage groove; 7. a rotating rod; 8. a lifting rod; 301. a mounting plate; 302. a conductive plate; 303. a conductive plate; 304. a connecting cylinder; 305. conductive piles; 401. an insulating anti-slip pad; 402. a backing plate; 403. pins; 404. positioning a frame; 405. a baffle; 406. a positioning sleeve; 407. and positioning bolts.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments.
Example 1
As shown in fig. 1-3, the utility model provides a withstand voltage testing device of a semiconductor discrete device, which comprises a bottom plate 1, wherein the top of the bottom plate 1 is fixedly connected with a withstand voltage testing device body 2, the back surface of the withstand voltage testing device body 2 is provided with an electrostatic discharge mechanism 3, and the inside of the withstand voltage testing device body 2 is provided with a positioning connecting mechanism 4; the positioning connection mechanism 4 includes: the insulating anti-slip pad 401, insulating anti-slip pad 401 fixed connection is in the bottom of bottom plate 1, and the inside of withstand voltage testing arrangement body 2 is provided with backing plate 402, and backing plate 402 has two, and fixed connection is in the bottom of withstand voltage testing arrangement body 2 inner wall respectively, and the top of backing plate 402 fixedly connected with the one end of a plurality of pin 403, its other end is fixed to run through the side of withstand voltage testing arrangement body 2 and outwards extends. A plurality of constant head tank has been seted up at the top of bottom plate 1, and the inside swing joint of constant head tank has the one end of pin 403, and the inside of constant head tank has been seted up movable groove, and the inside grafting of movable groove has a location framework 404, and a plurality of baffle 405 is installed on the right side of bottom plate 1, and spacer 406 has been seted up on the right side of baffle 405, and spacer 406's top passes through spacer bolt 407 and insulating slipmat 401's top threaded connection. The positioning frame 404 can be effectively inserted through the positioning groove, the pins 403 can be effectively limited by the positioning frame 404 to achieve the positioning connection effect, the baffle 405 and the positioning sleeve 406 can effectively prevent the positioning frame 404 from falling off, the positioning bolt 407 can be in threaded connection with the insulating anti-slip pad 401, and the anti-slip device has a simple overall structure and is convenient to detach and install. The caliber of the inner part of the positioning frame 404 is matched with the caliber of one end of the pin 403.
In this embodiment, through setting up the constant head tank and can effectively peg graft location framework 404 to utilize location framework 404 can carry out effective spacing to pin 403 and reach the effect of location connection, its baffle 405 and spacer 406 can effectively prevent that location framework 404 from droing, and its positioning bolt 407 can carry out threaded connection to insulating slipmat 401, and overall structure is simple, conveniently dismantles and installs.
Example 2
As shown in fig. 1-3, on the basis of embodiment 1, the present utility model provides a technical solution: preferably, the electrostatic discharge mechanism 3 includes: the mounting plate 301, mounting plate 301 fixed connection is at the back of withstand voltage testing device body 2, and four current conducting plates 302 are installed to the bottom of mounting plate 301, and four current conducting plates 302 are fixed respectively and are run through the back of withstand voltage testing device body 2 and extend to its inside. The static electricity changed in the withstand voltage test device body 2 can be effectively led out by providing the conductive plate 302 in the static electricity discharging mechanism 3. The back of the conductive plate 302 is fixedly connected with a conductive plate 303, a connecting cylinder 304 is arranged on the back of the conductive plate 303, and two conductive piles 305 are arranged inside the connecting cylinder 304. By arranging the conductive plate 303 and the conductive pile 305, static electricity can be effectively guided to the ground, and discharged. The top of withstand voltage testing arrangement body 2 is provided with waterproof cover 5, and two storage tanks 6 have been seted up at waterproof cover 5's top, and the inside of two storage tanks 6 articulates through the round pin axle has bull stick 7, and the outer wall fixedly connected with of bull stick 7 carries pull rod 8. The waterproof cover 5 can effectively waterproof the top of the device, and the whole body can be lifted by the lifting rod 8, so that the device is convenient to carry.
In this embodiment, the conductive plate 302 in the electrostatic discharge mechanism 3 can effectively guide out the static electricity changed in the voltage withstanding test device body 2, and then the conductive plate 303 and the conductive pile 305 cooperate to effectively guide the static electricity to the ground, so as to discharge the static electricity.
The working principle of the withstand voltage test device of the semiconductor discrete device is specifically described below.
As shown in fig. 1-3, when in use, the positioning frame 404 can be effectively inserted and connected by the positioning groove, the pins 403 can be effectively limited by the positioning frame 404 to achieve the effect of positioning connection, the baffle 405 and the positioning sleeve 406 can effectively prevent the positioning frame 404 from falling off, the positioning bolt 407 can be used for threaded connection of the insulating anti-slip pad 401, and the whole structure is simple and convenient to detach and install; then, the static electricity changed in the withstand voltage testing device body 2 can be effectively led out through arranging the conducting plate 302 in the static electricity discharging mechanism 3, and then the static electricity can be effectively led to the ground through the mutual matching of the conducting plate 303 and the conducting pile 305, so that the static electricity is discharged.
Claims (6)
1. The utility model provides a withstand voltage testing arrangement of semiconductor discrete device, includes bottom plate (1), its characterized in that: the top of the bottom plate (1) is fixedly connected with a pressure-resistant testing device body (2), an electrostatic discharge mechanism (3) is arranged on the back of the pressure-resistant testing device body (2), and a positioning connection mechanism (4) is arranged in the pressure-resistant testing device body (2);
the positioning connection mechanism (4) comprises: the anti-skid device comprises an insulating anti-skid pad (401), wherein the insulating anti-skid pad (401) is fixedly connected to the bottom of a bottom plate (1), a base plate (402) is arranged in a pressure-resistant testing device body (2), two base plates (402) are respectively and fixedly connected to the bottom of the inner wall of the pressure-resistant testing device body (2), one ends of a plurality of pins (403) are fixedly connected to the top of the base plate (402), and the other ends of the base plates fixedly penetrate through the side face of the pressure-resistant testing device body (2) and extend outwards.
2. The withstand voltage test apparatus for a discrete semiconductor device according to claim 1, wherein: the utility model discloses a motor vehicle, including bottom plate (1), locating sleeve (406) has been seted up at the top of bottom plate (1), the inside swing joint of locating groove has the one end of pin (403), the movable groove has been seted up to the inside of locating groove, peg graft in the inside of movable groove has location framework (404), a plurality of baffle (405) are installed on the right side of bottom plate (1), locating sleeve (406) have been seted up on the right side of baffle (405), the top of locating sleeve (406) pass through locating bolt (407) with the top threaded connection of insulating slipmat (401).
3. The withstand voltage test apparatus for a discrete semiconductor device according to claim 2, wherein: the caliber of the inner part of the positioning frame body (404) is matched with the caliber of one end of the pin (403).
4. The withstand voltage test apparatus for a discrete semiconductor device according to claim 1, wherein: the electrostatic discharge mechanism (3) includes: the pressure-resistant testing device comprises a mounting plate (301), wherein the mounting plate (301) is fixedly connected to the back surface of the pressure-resistant testing device body (2), four conducting plates (302) are mounted at the bottom of the mounting plate (301), and the four conducting plates (302) respectively penetrate through the back surface of the pressure-resistant testing device body (2) in a fixed mode and extend towards the inside of the pressure-resistant testing device body.
5. The withstand voltage test apparatus for a discrete semiconductor device as claimed in claim 4, wherein: the back fixedly connected with conducting plate (303) of conducting plate (302), the back mounting of conducting plate (303) has connecting cylinder (304), the inside of connecting cylinder (304) is provided with two electric pile (305).
6. The withstand voltage test apparatus for a discrete semiconductor device according to claim 1, wherein: the top of withstand voltage testing arrangement body (2) is provided with waterproof lid (5), two storage tanks (6) have been seted up at the top of waterproof lid (5), two the inside of storage tanks (6) is articulated through the round pin axle has bull stick (7), the outer wall fixedly connected with pull rod (8) of bull stick (7).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322093029.6U CN220455458U (en) | 2023-08-05 | 2023-08-05 | Withstand voltage testing device of semiconductor discrete device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202322093029.6U CN220455458U (en) | 2023-08-05 | 2023-08-05 | Withstand voltage testing device of semiconductor discrete device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220455458U true CN220455458U (en) | 2024-02-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202322093029.6U Active CN220455458U (en) | 2023-08-05 | 2023-08-05 | Withstand voltage testing device of semiconductor discrete device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220455458U (en) |
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2023
- 2023-08-05 CN CN202322093029.6U patent/CN220455458U/en active Active
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