CN220372848U - Wafer thickness measuring device and grinding machine - Google Patents

Abstract

The utility model belongs to the technical field of semiconductor manufacturing, and discloses a wafer thickness measuring device and a grinding machine. The wafer thickness measuring device comprises a base, a measuring mechanism and a spraying mechanism, wherein the base can be connected with the fixed structure; the measuring mechanism comprises a first measuring head and a second measuring head, wherein the first measuring head can be contacted with a turntable of the grinding machine through lifting so as to measure the height of the upper surface of the turntable, and the second measuring head can be contacted with a wafer placed on the turntable through lifting so as to measure the height of the upper surface of the wafer; the spray mechanism includes a first spray assembly that is selectively communicable with a liquid reservoir, liquid within the liquid reservoir being capable of spraying the first and second measuring heads via the first spray assembly. The wafer thickness measuring device and the grinder can measure the thickness of the wafer in real time, and can cool and clean the first measuring head and the second measuring head of the measuring mechanism, so that the measuring precision of the measuring mechanism is ensured, and the service life of the measuring mechanism is prolonged.

Description

Wafer thickness measuring device and grinding machine

Technical Field

The utility model relates to the technical field of semiconductor manufacturing, in particular to a wafer thickness measuring device and a grinding machine.

Background

The silicon chip, also called wafer, is processed on the wafer to manufacture various circuit element structures and is interconnected according to a certain circuit, and then is packaged in a tube shell, thus the semiconductor chip with specific electrical function can be obtained. Before the wafer is divided into semiconductors, it is necessary to perform thinning treatment, that is, grinding the side of the wafer containing no circuit elements to a target thickness to meet the packaging requirements.

In the thinning process, in order to grind the wafer to a target thickness, a contact measurement means is generally used to detect the thickness of the wafer in real time. The contact measurement is to drive the sensor probe of the measuring device to lift up and down, so that the sensor probe is respectively contacted with the upper and lower surfaces of the wafer and the wafer turntable, and the thickness of the wafer is calculated by calculating the height difference of the wafer and the wafer turntable. Because the wafer is always in a high-speed rotating state in the thinning process, friction and heat are generated when the sensor probe contacts with the wafer or the wafer turntable, so that the sensor probe is easy to wear; meanwhile, the sensor probe can directly contact waste liquid generated in the grinding process, and silicon slag in the waste liquid can be attached to the sensor probe and cannot be cleaned, so that the measuring accuracy and the service life of the sensor are affected.

Therefore, a wafer thickness measuring apparatus and a grinder are needed to solve the above-mentioned problems.

Disclosure of Invention

The utility model aims to provide a wafer thickness measuring device and a grinding machine, which can measure the thickness of a wafer in real time, simultaneously cool and clean a first measuring head and a second measuring head of a measuring mechanism, ensure the measuring precision of the measuring mechanism and prolong the service life of the measuring mechanism.

To achieve the purpose, the utility model adopts the following technical scheme:

in one aspect, there is provided a wafer thickness measuring apparatus comprising:

a base configured to be connected with the fixed structure;

the measuring mechanism is arranged on the base and comprises a first measuring head and a second measuring head which are arranged at intervals, the first measuring head and the second measuring head can be lifted, the first measuring head can be contacted with a turntable of a grinding machine through lifting so as to measure the height of the upper surface of the turntable, and the second measuring head can be contacted with a wafer placed on the turntable through lifting so as to measure the height of the upper surface of the wafer;

the spraying mechanism is arranged on the base and comprises a first spraying assembly, the first spraying assembly can be selectively communicated with a liquid storage source, and liquid in the liquid storage source can be sprayed by the first spraying assembly to form the first measuring head and the second measuring head.

Preferably, the first spraying component comprises a first cooling pipe and a second cooling pipe, the first cooling pipe and the second cooling pipe are connected with the base, one end of the first cooling pipe away from the base is opposite to the first measuring head, one end of the second cooling pipe away from the base is opposite to the second measuring head, and liquid in the liquid storage source can be sprayed on the first measuring head and the second measuring head through the first cooling pipe and the second cooling pipe correspondingly.

Preferably, the wafer thickness measuring device further comprises a connecting frame, the connecting frame comprises a connecting plate, a first positioning block and a second positioning block, the first positioning block and the second positioning block are arranged on the connecting plate, the connecting plate is connected with the base, the first cooling pipe is connected with the first positioning block, and the second cooling pipe is connected with the second positioning block.

Preferably, the spraying mechanism further comprises a second spraying assembly, the second spraying assembly comprises a spraying pipe and a plurality of spray heads, the spraying pipe extends along a first direction and can be selectively communicated with a liquid storage source, the spray heads are arranged on one face, facing the measuring mechanism, of the spraying pipe at intervals along the first direction, and liquid in the liquid storage source can be sprayed on the measuring mechanism through the spraying pipe and the spray heads.

Preferably, the wafer thickness measuring device further comprises a first connecting pipeline and a second connecting pipeline, a first circulating channel and a second circulating channel are arranged in the base, one end of the first circulating channel is connected with the first spraying assembly, the other end of the first circulating channel is connected with the liquid storage source through the first connecting pipeline, one end of the second circulating channel is connected with the spraying pipe, and the other end of the second circulating channel is connected with the liquid storage source through the second connecting pipeline.

Preferably, the wafer thickness measuring device further comprises a third connecting pipeline, a third circulating channel is arranged in the base, one end of the third circulating channel is connected with the first air bag and the second air bag of the measuring mechanism, the other end of the third circulating channel is connected with a gas charging and discharging device through the third connecting pipeline, and the gas charging and discharging device is used for providing gas sources for the first air bag and the second air bag.

Preferably, the wafer thickness measuring device further comprises a housing, the housing is connected with the base, the housing and the base jointly form a containing cavity, the measuring mechanism and the spraying mechanism are both arranged in the containing cavity, and one end, close to the wafer, of the first measuring head and the second measuring head extends out of the housing.

In another aspect, there is provided a wafer grinding machine including a turntable, a grinding mechanism, and a wafer thickness measuring device as described above, the wafer thickness measuring device being disposed above the turntable, the turntable being rotatable about its own center, the turntable being configured to carry a wafer, the grinding mechanism being disposed above the turntable for performing grinding thinning processing on the wafer.

The beneficial effects are that:

when the wafer thickness measuring device and the grinding machine are specifically used, the base is connected to the fixing mechanism, the wafer thickness measuring device is located above the rotation of the grinding machine, then the wafer is placed on the rotary table, the rotary table drives the wafer to rotate at a high speed, and the grinding mechanism is driven to grind and thin the wafer. In the grinding process, the first spraying assembly is communicated with the liquid storage source, so that the first spraying assembly sprays the first measuring head and the second measuring head in real time, and then the measuring mechanism is started to measure the thickness of the wafer in real time. The first measuring head and the second measuring head can be respectively contacted with the upper surface of the turntable and the upper surface of the wafer through lifting, so that the first measuring head measures the height of the upper surface of the turntable, and the second measuring head measures the height of the upper surface of the wafer. The first measuring head and the second measuring head can transmit measured data to a control system of the grinding machine in real time, the control system can calculate the real-time thickness of the wafer according to the data (the difference value of the measured data of the first measuring head and the second measuring head is the thickness of the wafer), and meanwhile, the lifting height of the grinding mechanism is controlled according to the real-time thickness of the wafer, so that the grinding amount of the grinding mechanism is adjusted, and the thickness of the wafer is controlled. In the process of grinding the wafer, the liquid in the liquid storage source cools and cleans the first measuring head and the second measuring head through the first spraying component so as to reduce the heat generated when the first measuring head contacts the rotary table and the second measuring head contacts the wafer, thereby reducing the abrasion of the first measuring head and the second measuring head, simultaneously avoiding the silicon slag in the grinding waste liquid from accumulating on the first measuring head and the second measuring head, further ensuring the measuring precision of the measuring mechanism and prolonging the service life of the measuring mechanism.

Drawings

FIG. 1 is a schematic perspective view of a wafer thickness measuring apparatus according to the present utility model;

FIG. 2 is a schematic perspective view of an internal structure of the wafer thickness measuring apparatus according to the present utility model;

FIG. 3 is a schematic diagram showing the relative positions of the wafer thickness measuring device and the turntable;

FIG. 4 is a top view of the internal structure of the wafer thickness measuring device provided by the utility model;

FIG. 5 is a right side view of the internal structure of the wafer thickness measuring device provided by the utility model;

FIG. 6 is a front cross-sectional view of a wafer thickness measurement apparatus provided by the present utility model;

fig. 7 is a left side cross-sectional view of the wafer thickness measuring device provided by the utility model.

In the figure:

1. a base; 11. a first flow channel; 12. a second flow channel; 13. a third flow channel; 14. a first connection joint; 15. a second connection joint; 16. a first measurement body; 161. a first interface; 17. a second measurement body; 18. a third connection joint;

2. a measuring mechanism; 21. a first measuring head; 22. a second measuring head; 23. a first connecting arm; 24. a second connecting arm;

3. a spraying mechanism; 31. a first spray assembly; 311. a first cooling tube; 312. a second cooling tube; 321. a shower pipe;

4. a connecting frame; 41. a connecting plate; 42. a first positioning block; 43. a second positioning block;

5. a housing;

100. a turntable;

200. and (3) a wafer.

Detailed Description

The utility model is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the utility model and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present utility model are shown in the drawings.

In the description of the present utility model, unless explicitly stated and limited otherwise, the terms "connected," "connected," and "fixed" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.

In the present utility model, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.

In the description of the present embodiment, the terms "upper", "lower", "right", etc. orientation or positional relationship are based on the orientation or positional relationship shown in the drawings, and are merely for convenience of description and simplicity of operation, and do not indicate or imply that the apparatus or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the utility model. Furthermore, the terms "first," "second," and the like, are used merely for distinguishing between descriptions and not for distinguishing between them.

Referring to fig. 1 to 7, the present embodiment provides a wafer thickness measuring apparatus capable of measuring the thickness of a wafer 200 in real time, and simultaneously cooling and cleaning a first measuring head 21 and a second measuring head 22 of a measuring mechanism 2, thereby ensuring the measuring accuracy of the measuring mechanism 2 and prolonging the service life of the measuring mechanism 2. The wafer thickness measuring device comprises a base 1, a measuring mechanism 2 and a spraying mechanism 3.

Referring to fig. 1 and 2, the base 1 is configured to be connected to a fixed structure. The measuring mechanism 2 is disposed on the base 1, and includes a first measuring head 21 and a second measuring head 22 disposed at intervals, where the first measuring head 21 and the second measuring head 22 are both capable of being lifted, the first measuring head 21 can be contacted with the turntable 100 of the grinding machine by lifting so as to measure the height of the upper surface of the turntable 100, and the second measuring head 22 can be contacted with the wafer 200 placed on the turntable 100 by lifting so as to measure the height of the upper surface of the wafer 200. The spraying mechanism 3 is disposed on the base 1 and includes a first spraying component 31, the first spraying component 31 can be selectively communicated with a liquid storage source, and the liquid in the liquid storage source can be sprayed on the first measuring head 21 and the second measuring head 22 through the first spraying component 31.

Referring to fig. 3, in the wafer thickness measuring apparatus provided in this embodiment, when in specific use, the base 1 is first connected to the fixing mechanism, so that the wafer thickness measuring apparatus is located above the rotation 100 of the grinder, and then the wafer 200 is placed on the turntable 100, so that the turntable 100 drives the wafer 200 to rotate at a high speed, and drives the grinding mechanism to perform grinding and thinning processing on the wafer 200. In the grinding process, the first spraying assembly 31 is communicated with the liquid storage source, so that the first spraying assembly 31 sprays the first measuring head 21 and the second measuring head 22 in real time, and then the measuring mechanism 2 is started to measure the thickness of the wafer 200 in real time. The first measuring head 21 and the second measuring head 22 can be respectively contacted with the upper surface of the turntable 100 and the upper surface of the wafer 200 by lifting, so that the first measuring head 21 measures the height of the upper surface of the turntable 100 and the second measuring head 22 measures the height of the upper surface of the wafer 200. The first measuring head 21 and the second measuring head 22 can transmit measured data to a control system of the grinding machine in real time, and the control system can calculate the real-time thickness of the wafer 200 according to the data (the difference between the measured data of the first measuring head 21 and the measured data of the second measuring head 22 is the thickness of the wafer 200), and meanwhile, the lifting height of the grinding mechanism is controlled according to the real-time thickness of the wafer 200, so that the grinding amount of the grinding mechanism is adjusted, and the thickness of the wafer 200 is controlled. In the process of grinding the wafer 200, the liquid in the liquid storage source cools and cleans the first measuring head 21 and the second measuring head 22 through the first spraying component 31 so as to reduce heat generated when the first measuring head 21 is contacted with the turntable 100 and the second measuring head 22 is contacted with the wafer 200, thereby reducing abrasion of the first measuring head 21 and the second measuring head 22, simultaneously avoiding silicon slag in grinding waste liquid from accumulating on the first measuring head 21 and the second measuring head 22, further ensuring the measuring precision of the measuring mechanism 2 and prolonging the service life of the measuring mechanism 2.

It should be noted that, the fixing structure may be a bracket or a column, so long as the wafer thickness measuring device can be fixed, which is not described in detail in this embodiment.

Optionally, the first measuring head 21 and the second measuring head 22 are distance measuring sensors and are in communication with a control system of the grinding machine, so that the first measuring head 21 and the second measuring head 22 can transmit measured data to the control system of the grinding machine in real time.

Optionally, the spraying mechanism 3 further includes a second spraying assembly, where the second spraying assembly includes a spraying pipe 311 and a plurality of spray nozzles, the spraying pipe 321 extends along a first direction and can selectively communicate with a liquid storage source, the plurality of spray nozzles are disposed on a surface of the spraying pipe 321 facing the measuring mechanism 2 along the first direction at intervals, and the liquid in the liquid storage source can spray the measuring mechanism 2 via the spraying pipe 321 and the plurality of spray nozzles (the direction of the arrow in fig. 4 is the first direction). In the process of grinding the wafer 200, the spray pipe 321 is communicated with a liquid storage source, so that liquid in the liquid storage source is sprayed to the measuring mechanism 2 in real time through the spray pipe 321 and a plurality of spray heads. Because large-particle impurities such as silica slag exist in the grinding waste liquid, the second spraying assembly can clean the measuring mechanism 2, so that the grinding waste liquid is prevented from polluting the detecting mechanism, and silica slag in the grinding waste liquid is prevented from being accumulated on the detecting mechanism 2. Meanwhile, the second spray assembly can further spray and cool the first measuring head 21 and the second measuring head 22, so that heat generated when the first measuring head 21 contacts the grinding table 100 and the second measuring head 22 contacts the wafer 200 is further reduced, and abrasion of the first measuring head 21 and the second measuring head 22 is further reduced. In addition, the spray pipe 321 can also spray and clean the first spray assembly 31, so that the grinding waste liquid is prevented from polluting the first spray assembly 31, and the silicon slag in the grinding waste liquid is prevented from adhering to the first spray assembly 31.

The wafer thickness measuring device provided by the embodiment has the advantages of compact structure, small occupied space and convenient use. Alternatively, referring to fig. 4, in this embodiment, two spray pipes 321 are provided, and one spray pipe 321 is correspondingly provided directly above the first measuring head 21 and directly above the second measuring head 22, and a plurality of spray heads are provided on each spray pipe 321 along the first direction so as to be adapted to the first measuring head 21 and the second measuring head 22, thereby improving the cooling and cleaning effects.

Optionally, the first spraying assembly 31 includes a first cooling pipe 311 and a second cooling pipe 312, where the first cooling pipe 311 and the second cooling pipe 312 are connected to the base 1, an end of the first cooling pipe 311 away from the base 1 is opposite to the first measuring head 21, an end of the second cooling pipe 312 away from the base 1 is opposite to the second measuring head 22, and the liquid in the liquid storage source can correspondingly spray the first measuring head 21 and the second measuring head 22 through the first cooling pipe 311 and the second cooling pipe 312. Since one end of the first cooling pipe 311 is opposite to the first measuring head 21 and one end of the second cooling pipe 312 is opposite to the second measuring head 22, when the first spray assembly 31 is communicated with the liquid storage source, the liquid in the liquid storage source is sprayed on the first measuring head 21 and the second measuring head 22 through the first cooling pipe 311 and the second cooling pipe 312, so that the first measuring head 21 and the second measuring head 22 are locally cooled and cleaned.

In the present embodiment, the first cooling pipe 311 and the second cooling pipe 312 are located inside the two shower pipes 321 and are inclined toward the first measuring head 21 and the second measuring head 22, respectively, so as to better spray the first measuring head 21 and the second measuring head 22.

Optionally, referring to fig. 3, 4 and 5, the wafer thickness measuring apparatus further includes a connection frame 4, where the connection frame 4 includes a connection plate 41, and a first positioning block 42 and a second positioning block 43 disposed on the connection plate 41, the connection plate 41 is connected to the base 1, the first cooling tube 311 is connected to the first positioning block 42, and the second cooling tube 312 is connected to the second positioning block 43. By the arrangement, the first cooling pipe 311 and the second cooling pipe 312 can be stably fixed on the connecting plate 41, the first cooling pipe 311 and the second cooling pipe 312 are prevented from being separated from the connecting plate 41, and the structural stability of the wafer thickness measuring device is ensured.

In the present embodiment, the first positioning block 42 and the second positioning block 43 are locked on the connecting plate 41 by fasteners, the first cooling tube 311 is inserted into the first positioning block 42 and locked on the first positioning block 42 by fasteners, and the second cooling tube 312 is inserted into the second positioning block 43 and locked on the second positioning block 43 by fasteners, so as to increase the contact areas between the first cooling tube 311 and the first positioning block 42 and between the second cooling tube 312 and the second positioning block 43, thereby improving the connection strength between the first cooling tube 311 and the first positioning block 42 and between the second cooling tube 312 and the second positioning block 43. Optionally, the fastener is the bolt, and bolted connection's mode installs and removes conveniently, and the connection is stable, is convenient for maintain and replace the part.

Optionally, referring to fig. 6 and 7, the wafer thickness measuring device further includes a first connecting pipeline and a second connecting pipeline, a first flow channel 11 and a second flow channel 12 are disposed in the base 1, one end of the first flow channel 11 is connected with the first spray assembly 31, the other end is connected with the liquid storage source through the first connecting pipeline, one end of the second flow channel 12 is connected with the spray pipe 321, and the other end is connected with the liquid storage source through the second connecting pipeline. By providing the first and second flow channels 11 and 12 in the base 1, liquid in the liquid storage source can flow into the first spray assembly 31 through the first connecting line and the first flow channel 11, and through the second connecting line and the second flow channel 12 to the spray pipe 321.

Further, the end face of the base 1 is provided with first connecting joints 14 at two ends of the first circulation channel 11, and the first spray assembly 31 and the first connecting pipeline are connected with the base 1 through the corresponding first connecting joints 14; similarly, second connection joints 15 are provided at both ends of the second flow channel 12 on the end surface of the base 1, and the shower pipe 321 and the second connection pipe are connected to the base 1 through the corresponding second connection joints 15.

Optionally, the first connecting pipeline is provided with a first control valve, the second connecting pipeline is provided with a second control valve, the first control valve is used for controlling the on-off of the first connecting pipeline, the second control valve is used for controlling the on-off of the second connecting pipeline, so that the first spray assembly 31 is selectively communicated with the liquid storage source, the spray pipe 321 is selectively communicated with the liquid storage source, and the adjustment is convenient. Further, the first control valve and the second control valve are both in communication connection with a control system of the grinding machine so as to automatically control the on-off of the first connecting pipeline and the second connecting pipeline through the control system. Optionally, in this embodiment, the first control valve and the second control valve are all pneumatic ball valves, and the pneumatic ball valves are simple in structure, compact and reliable, and convenient to operate, and the specific structure and working principle of the pneumatic ball valves are conventional settings in the prior art, and are not described in detail herein.

Optionally, the second spray assembly further comprises a blocking member for blocking an end of the spray pipe 321 remote from the base 1. Specifically, in this embodiment, the plugging member is configured as a cylinder, and a groove is provided therein, and one end of the shower pipe 321 remote from the base 1 is inserted into the groove in a sealing manner. Optionally, the plugging piece is made of rubber material, the rubber material has good elasticity and can generate certain elastic deformation, so that the spray pipe 321 can be tightly plugged, and the rubber material is wear-resistant and long in service life.

In this embodiment, a plurality of mounting holes are provided on one surface of the shower 321 facing the detection mechanism along the first direction, and a shower head is detachably mounted in each mounting hole, so that maintenance and replacement of the shower head can be facilitated.

Optionally, the liquid storage source includes liquid storage tank and driving piece, and the input of driving piece links to each other with the liquid storage tank, and first connecting pipe and second connecting line all link to each other with the output of driving piece, start the driving piece, and the liquid in the liquid storage tank is carried in the first spray assembly 31 through first connecting line and is carried to shower 321 through the second connecting line. In this embodiment, the driving piece is the booster pump, and the volume of booster pump is small and exquisite, simple to operate, long service life. In the embodiment, the liquid in the liquid storage tank is clear water, so that the materials are conveniently obtained, and the cost is low.

Optionally, referring to fig. 6, the wafer thickness measurement apparatus further includes a third connecting pipeline, a third flow channel 13 is disposed in the base 1, one end of the third flow channel 13 is connected with the first air bag and the second air bag of the measurement mechanism, and the other end is connected with an air charging and discharging device through the third connecting pipeline, and the air charging and discharging device is used for providing air sources for the first air bag and the second air bag. Specifically, in the present embodiment, the measuring mechanism is an outsourcing piece, including a first measuring body 16 and a second measuring body 17, and the first measuring body 16 and the second measuring body 17 are both disposed on the base. A first air bag is arranged in the first measuring body 17, one end of a first connecting arm 23 is connected with the first air bag, the other end of the first connecting arm is connected with the first measuring head 21, and the first air bag can be connected with air charging and discharging equipment so as to drive the first measuring head 21 to lift; the second measuring body 17 is internally provided with a second air bag, one end of a second connecting arm 24 is connected with the second air bag, the other end of the second connecting arm is connected with the second measuring head 22, and the second air bag can be connected with air charging and discharging equipment so as to drive the second measuring head 22 to lift. The third connecting pipeline and the third flow channel 13 are arranged to realize the connection of the first air bag and the second air bag with the air charging and discharging equipment, and the air charging and discharging equipment is started to charge and discharge the first air bag and the second air bag, so that the volumes of the first air bag and the second air bag are changed, the flexible lifting of the first measuring head 21 and the second measuring head 22 is realized, the lifting stability of the first measuring head 21 and the second measuring head 22 is ensured, and the measuring precision of the thickness of the wafer 200 is improved.

Optionally, the air charging and discharging equipment is an air pump, and the air pump has the advantages of simple structure, convenient use, wide adjusting range and low cost. Further, the air pump is in communication connection with a control system of the grinding machine, so that the air pump can be controlled to inflate and deflate the first air bag and the second air bag through the control system, and the lifting of the first measuring head 21 and the second measuring head 22 is automatically controlled.

Optionally, third connection joints 18 are disposed on the end face of the base 1 at two ends of the third flow channel 13, and the first air bag, the second air bag and the third connection pipeline are connected with the base 1 through the corresponding third connection joints 18.

Further, the first measuring body 16 is provided with a first interface 161 communicated with the first air bag, the second measuring body 17 is provided with a second interface communicated with the second air bag, and the wafer thickness measuring device further comprises a fourth connecting pipeline, one end of the fourth connecting pipeline is connected with the first interface 161 and the second interface, and the other end of the fourth connecting pipeline is connected with the third connecting joint 18.

Optionally, the wafer thickness measuring device further includes a housing 5, the housing 5 is connected to the base 1, the housing 5 and the base 1 together form a containing cavity, the measuring mechanism 2 and the spraying mechanism 3 are disposed in the containing cavity, and the first measuring head 21 and the second measuring head 22 extend out of the housing 5 near one end of the wafer 200. So set up, can isolate the waste grinding liquid outside shell 5 for most to effectively protect measuring mechanism 2 and spraying mechanism 3, avoid waste grinding liquid to pollute measuring mechanism 2 and spraying mechanism 3. In this embodiment, the bottom wall of the housing 5 is provided with a first through hole opposite to the first measuring head 21 and a second through hole opposite to the second measuring head 22, one end of the first measuring head 21 extends out of the housing 5 through the first through hole, one end of the second measuring head 22 extends out of the housing 5 through the second through hole, and the liquid sprayed by the spraying mechanism 3 can also be discharged out of the housing 5 through the first through hole and the second through hole without accumulating in the accommodating cavity, so that the use is convenient.

It should be noted that, only when the thickness of the wafer 200 is measured, the first measuring head 21 is in contact with the turntable 100, and the second measuring head 22 is in contact with the wafer 200, so that the first spraying assembly 31 is in communication with the liquid storage source before the thickness of the wafer 200 is measured, but during the grinding process, part of the grinding waste liquid enters the housing 5 to pollute the measuring mechanism 2, so that the spraying pipe 321 is always in communication with the liquid storage source to spray and clean the measuring mechanism 2 in real time.

The present embodiment also provides a wafer grinding machine, including the turntable 100, the grinding mechanism, and the wafer thickness measuring device as described above, where the wafer thickness measuring device is disposed above the turntable 100, the turntable 100 can rotate around its own center, the turntable 100 is configured to carry the wafer 200, and the grinding mechanism is disposed above the turntable 100, for performing grinding and thinning processing on the wafer 200. The wafer grinder can measure the thickness of the wafer 200 in real time, can cool and clean the measuring mechanism 2 of the measuring device, ensures the measuring precision of the measuring mechanism 2, and prolongs the service life of the measuring mechanism 2.

It is to be understood that the above examples of the present utility model are provided for clarity of illustration only and are not limiting of the embodiments of the present utility model. Various obvious changes, rearrangements and substitutions can be made by those skilled in the art without departing from the scope of the utility model. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the utility model are desired to be protected by the following claims.

Claims (8)

1. The wafer thickness measuring device is characterized by comprising:

a base (1) configured to be connected with a fixed structure;

the measuring mechanism (2) is arranged on the base (1) and comprises a first measuring head (21) and a second measuring head (22) which are arranged at intervals, the first measuring head (21) and the second measuring head (22) can be lifted, the first measuring head (21) can be contacted with a turntable (100) of a grinding machine through lifting so as to measure the height of the upper surface of the turntable (100), and the second measuring head (22) can be contacted with a wafer (200) placed on the turntable (100) through lifting so as to measure the height of the upper surface of the wafer (200);

the spraying mechanism (3) is arranged on the base (1) and comprises a first spraying assembly (31), the first spraying assembly (31) can be selectively communicated with a liquid storage source, and liquid in the liquid storage source can be sprayed by the first spraying assembly (31) to form the first measuring head (21) and the second measuring head (22).

2. The wafer thickness measurement device according to claim 1, wherein the first spray assembly (31) comprises a first cooling pipe (311) and a second cooling pipe (312), the first cooling pipe (311) and the second cooling pipe (312) are connected with the base (1), one end of the first cooling pipe (311) away from the base (1) is opposite to the first measurement head (21), one end of the second cooling pipe (312) away from the base (1) is opposite to the second measurement head (22), and liquid in the liquid storage source can be sprayed on the first measurement head (21) and the second measurement head (22) through the first cooling pipe (311) and the second cooling pipe (312) respectively.

3. The wafer thickness measurement device according to claim 2, further comprising a connection frame (4), wherein the connection frame (4) comprises a connection plate (41) and a first positioning block (42) and a second positioning block (43) arranged on the connection plate (41), the connection plate (41) is connected with the base (1), the first cooling tube (311) is connected with the first positioning block (42), and the second cooling tube (312) is connected with the second positioning block (43).

4. The wafer thickness measurement device of claim 1, wherein the spray mechanism (3) further comprises a second spray assembly comprising a spray pipe (321) and a plurality of spray heads, the spray pipe (321) extending along a first direction and being capable of selectively communicating with a liquid reservoir, the plurality of spray heads being disposed at intervals along the first direction on a side of the spray pipe (321) facing the measurement mechanism (2), the liquid in the liquid reservoir being capable of spraying the measurement mechanism (2) via the spray pipe (321) and the plurality of spray heads.

5. The wafer thickness measurement device according to claim 4, further comprising a first connecting pipe and a second connecting pipe, wherein a first circulation channel (11) and a second circulation channel (12) are provided in the base (1), one end of the first circulation channel (11) is connected to the first spray assembly (31), the other end is connected to the liquid storage source through the first connecting pipe, and one end of the second circulation channel (12) is connected to the spray pipe (321), and the other end is connected to the liquid storage source through the second connecting pipe.

6. The wafer thickness measurement device according to claim 5, further comprising a third connecting line, wherein a third flow channel (13) is provided in the base (1), one end of the third flow channel (13) is connected to the first air bag and the second air bag of the measurement mechanism, and the other end is connected to an air charging and discharging device through the third connecting line, and the air charging and discharging device is used for providing air sources for the first air bag and the second air bag.

7. Wafer thickness measuring device according to any of claims 1-6, characterized in that it further comprises a housing (5), said housing (5) being connected to the base (1), said housing (5) and said base (1) together forming a receiving chamber, said measuring means (2) and said spraying means (3) being arranged in said receiving chamber, said first measuring head (21) and said second measuring head (22) extending out of said housing (5) near an end of the wafer (200).

8. Wafer grinding machine, characterized by comprising a turntable (100), a grinding mechanism, and a wafer thickness measuring device according to any one of claims 1-7, said wafer thickness measuring device being arranged above said turntable (100), said turntable (100) being rotatable about its own center, said turntable (100) being configured to carry a wafer (200), said grinding mechanism being arranged above said turntable (100) for performing a grinding thinning process on said wafer (200).