CN220339315U - Wafer thickness detection device - Google Patents

Abstract

The utility model provides a wafer thickness detection device, and belongs to the technical field of semiconductor processing; comprising the following steps: the wafer measuring device comprises a frame, a bearing platform and a measuring assembly, wherein the bearing platform is arranged on the frame and used for bearing a wafer, a plurality of measuring holes penetrating through the bearing platform are formed in the bearing platform, and the measuring assembly is arranged on the frame; wherein, the measurement assembly includes: the laser detection units and the rotating assembly are oppositely arranged along the bearing platform, and the two laser detection units are coaxially arranged; the rotating assembly is connected with the bearing platform to drive the bearing platform to rotate; a detection path is formed between the two coaxially arranged laser detection units, and the measuring hole is positioned on the detection path. The technical problem that the measuring precision of the wafer thickness detecting device in the prior art is low is solved, and the technical effect of improving the measuring precision of the wafer thickness is achieved.

Description

Wafer thickness detection device

Technical Field

The application relates to the technical field of semiconductor processing, in particular to a wafer thickness detection device.

Background

The semiconductor refers to a material with conductivity between a conductor and an insulator at normal temperature, and the semiconductor is applied to the fields of integrated circuits, consumer electronics, communication systems, photovoltaic power generation, illumination, high-power conversion and the like; in the manufacturing process of a semiconductor, it is necessary to grind a substrate (wafer) to a specified thickness and then to perform chip separation (dicing, dicing process).

In the existing semiconductor production and processing process, there are two general modes of contact type and non-contact type for measuring the thickness of a wafer, wherein the contact type needs to be contacted with the wafer, the contact type measuring precision is lower, and the wafer can be damaged; in the non-contact measurement mode, a laser distance meter is generally adopted to measure the thickness of a wafer, the principle of laser distance measurement is mainly that a beam of laser is split to the surface of a detection object through a triangle measurement method, the distance between a laser head and the detection object can be measured through detecting the reflection position of the laser (as shown in figure 1), the laser distance measurement is limited by the structure of the laser when measuring a large-size wafer, particularly a wafer with the diameter of 600-800mm, the inside of the wafer is difficult to directly measure, and meanwhile, the precision of the existing laser distance measurement mode is low.

Therefore, the technical problems of the prior art are: the existing wafer thickness detection device has lower measurement accuracy.

Disclosure of Invention

The utility model provides a wafer thickness measuring device has solved among the prior art wafer thickness measuring device measurement accuracy lower technical problem, reaches the technological effect that improves wafer thickness measurement accuracy.

The application provides a diaphragm valve electropolishing efficiency is lower, adopts following technical scheme:

a diaphragm valve electropolishing apparatus comprising: the wafer measuring device comprises a frame, a bearing platform and a measuring assembly, wherein the bearing platform is arranged on the frame and used for bearing a wafer, a plurality of measuring holes penetrating through the bearing platform are formed in the bearing platform, and the measuring assembly is arranged on the frame; wherein, the measurement assembly includes: the laser detection units and the rotating assembly are oppositely arranged along the bearing platform, and the two laser detection units are coaxially arranged; the rotating assembly is connected with the bearing platform to drive the bearing platform to rotate; a detection path is formed between the two coaxially arranged laser detection units, and the measuring hole is positioned on the detection path.

Preferably, the measuring assembly further comprises: the mounting arm is mounted on the frame; the mounting fixture is mounted on the mounting arm and is used for mounting the laser detection unit and adjusting the axial and horizontal positions of the laser detection unit.

Preferably, the mounting arms in the measuring assembly are symmetrically arranged with respect to the bearing platform, the symmetrically arranged mounting arms form a containing cavity, and the bearing platform can rotate in the containing cavity.

Preferably, the mounting arms are telescopic members, and symmetrically mounted mounting arms in the same measuring assembly synchronously move to drive the laser detection units to synchronously move.

Preferably, the wafer thickness detection device further comprises an adsorption component, and a plurality of adsorption components are arranged on the bearing platform at intervals and used for adsorbing wafers.

Preferably, the adsorption assembly comprises an adsorption unit, the adsorption unit is mounted on the bearing platform, and the end face of the adsorption unit is lower than the end face of the bearing platform.

Preferably, the rack further comprises a placement table, and the placement table is installed on the rack and used for bearing the control unit of the laser detection unit.

Preferably, a protective film is mounted on the bearing platform for protecting the bearing platform.

Preferably, the wafer thickness measuring device further includes: the walking lifting assembly is arranged on the frame and used for controlling the horizontal movement and vertical lifting of the frame.

Preferably, the walking lifting assembly includes: the pulleys are arranged at the bottom of the frame; the telescopic rods are connected with the bearing platform to adjust the levelness of the bearing platform.

In summary, the beneficial technical effects of the application are:

1. the thickness of the round wafer on the bearing platform is measured by adopting the coaxially arranged laser detection units, the measuring assembly comprising the coaxial laser detection units can measure any position of the round wafer, particularly a large-size round wafer, and meanwhile, the accuracy of coaxial laser detection is higher.

2. The utility model provides a wafer thickness measuring device through setting up loading platform and rotating assembly, can bear the weight of the wafer of various different models and measure the wafer.

3. Through setting up the adsorption component, when measuring the wafer, can adsorb the wafer and make it can closely laminate with loading platform, eliminate measuring error, promote measurement accuracy.

Drawings

FIG. 1 is a schematic diagram of a prior art triangle measurement method;

FIG. 2 is a schematic diagram of a coaxial test method used in the present utility model;

FIG. 3 is a front view of a wafer thickness measuring device according to the present utility model;

FIG. 4 is a schematic view of a device for measuring thickness of a wafer according to the present utility model;

FIG. 5 is a top view of a wafer thickness measuring device according to the present utility model;

fig. 6 is a schematic structural view of the mounting fixture of the present utility model.

Reference numerals illustrate: 100. a frame; 110. a storage table; 200. a load-bearing platform; 300. a measurement assembly; 310. a laser detection unit; 320. a mounting arm; 330. installing a clamp; 400. a rotating assembly; 500. an adsorption assembly; 510. an adsorption unit; 600. a walking lifting assembly; 610. a pulley; 620. a telescopic rod.

Detailed Description

The numbering of the components itself, e.g. "first", "second", etc., is used herein merely to distinguish between the described objects and does not have any sequential or technical meaning. The terms "coupled" and "connected," as used herein, are intended to encompass both direct and indirect coupling (coupling), unless otherwise indicated. In the description of the present application, it should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," etc. indicate or refer to an orientation or positional relationship based on that shown in the drawings, merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present application.

In this application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.

The utility model provides a wafer thickness detection device for measure the measurement of wafer, the lower technical problem of wafer thickness detection device measurement accuracy among the prior art reaches the technical effect that improves wafer thickness measurement accuracy, simplified measurement process, promotion measuring range.

In the existing semiconductor production and processing process, there are two general modes of contact type and non-contact type for measuring the thickness of a wafer, wherein the contact type (such as a micrometer and other measuring tools) needs to be in contact with the wafer, the contact type measuring precision is lower, and the wafer may be damaged; in the non-contact measurement mode, a laser distance meter is generally adopted to measure the thickness of a wafer, the principle of laser distance measurement is mainly that a beam of laser is split to the surface of a detection object through a triangle measurement method, the distance between a laser head and the detection object can be measured through detecting the reflection position of the laser (as shown in figure 1), the laser distance measurement is limited by the structure of the laser when measuring a large-size wafer, particularly a wafer with the diameter of 600-800mm, the inside of the wafer is difficult to directly measure, and meanwhile, the precision of the existing laser distance measurement mode is low.

In order to solve the above problems, the following solutions are provided:

a wafer thickness detection apparatus comprising: a frame 100, a load platform 200, a measurement assembly 300, and a rotation assembly 400; the bearing platform 200 and the measuring assembly 300 are both arranged on the frame 100, the bearing platform 200 is used for bearing a round wafer, the measuring assembly 300 is used for measuring the thickness of the designated position of the round wafer, and a plurality of measuring holes penetrating through the bearing platform 200 are formed in the bearing platform 200; the rotating assembly 400 is connected with the carrying platform 200 to drive the carrying platform 200 to rotate; a detection path is formed between two coaxially arranged laser detection units 310, and the measurement hole is located on the detection path.

Referring to fig. 4, the measuring assembly 300 includes a laser detection unit 310, two laser detection units 310 are installed opposite to each other along the carrying platform 200, and the two laser detection units 310 are coaxially disposed. In this application, a coaxial laser detection unit 310 is used for measuring the thickness of a wafer, and the measurement principle is mainly that the wafer to be detected is irradiated by emitting laser on the upper and lower end surfaces of the measured object, and the two detection units respectively measure the distances a and B (as shown in fig. 2) between the upper and lower surfaces of the measured object and the detection units. The thickness of the detected object=l-a-B is calculated from the distance L between the two detection units determined before detection. Compared with the existing triangular detection mode, the coaxial laser detection unit 310 is higher in precision, measurement of any position of a round wafer can be achieved by changing the installation position of the coaxial laser detection unit 310, applicability of the thickness measuring device is greatly improved, and measurement of the inner position of the round wafer can be achieved even when the round wafer with a large size faces the round wafer.

Specifically, by arranging the carrying platforms 200 with different shapes and sizes, the device can adapt to round wafers with different models and sizes, and similarly, the thickness measurement can be realized by adopting the device when other thin sheet parts with similar properties to the round wafers are measured; since the coaxial laser detection unit 310 needs to leave the corresponding measurement hole on the carrying platform 200 when measuring the thickness of the wafer, the existence of the measurement hole is to measure both sides of the wafer by the coaxially arranged laser detection unit 310, so the shape and position of the measurement hole can be selected according to actual needs, and the laser detection unit 310 can measure the wafer through the measurement hole.

Referring to fig. 3-6, the measurement assembly 300 further includes: the mounting fixture 330, the mounting arm 320 is installed in the frame 100, and the mounting fixture 330 is installed in the mounting arm 320, and the mounting fixture 330 is used for installing the laser detection unit 310 and can adjust the axial and horizontal position of the laser detection unit 310. By providing the mounting arm 320 mounted to the frame 100 such that the measurement position depends on the length of the mounting arm 320, by changing the length and angle of the mounting arm 320, the measurement of any point on the wafer can be accomplished; by providing the mounting fixture 330 at one end of the mounting arm 320, the mounting fixture 330 is shown as having a plurality of adjustment members between the mounting fixture 330 and the laser detection unit 310, which can adjust the horizontal and vertical positions of the laser detection unit 310.

Further, referring to fig. 3, the mounting arms 320 of the same measuring assembly 300 are symmetrically disposed with respect to the carrying platform 200, and the symmetrically disposed mounting arms 320 form a receiving cavity in which the carrying platform 200 can rotate. The installation arms 320 are used for installing the laser detection units 310, and the two laser detection units 310 in the application are coaxially arranged, and the installation arms 320 are symmetrically arranged, so that the laser detection units 310 installed on the two installation arms 320 are coaxially arranged, and only the laser detection units 310 need to be finely adjusted in the subsequent adjustment process of the laser detection units 310. Meanwhile, the carrying platform 200 can rotate between the two mounting arms 320, the carrying platform 200 is rotated to drive the round wafer positioned on the carrying platform 200 to synchronously rotate, and the laser detection unit 310 is not required to be adjusted when measuring different positions of the round wafer, so that the measurement accuracy and the measurement efficiency are improved.

Further, the mounting arms 320 are telescopic members, and symmetrically mounted mounting arms 320 in the same measuring assembly 300 move synchronously to drive the laser detection unit 310 to move synchronously. As before, the length of the mounting arm 320 determines the measurement position of the laser detection unit 310, and the mounting arm 320 is symmetrically arranged and can be synchronously contracted, so that the mounting arm 320 can finish the measurement of the thickness of the wafer at different positions, complicated movement of the laser ranging unit is not needed, the measurement process is optimized, and the measurement time and cost are saved.

Referring to fig. 5, the wafer thickness detecting apparatus further includes an adsorption assembly 500, and the adsorption assemblies 500 are disposed on the carrier 200 at intervals for adsorbing the wafer. In the process of measuring the wafer, because the thickness of the wafer is very small, the wafer may be tilted, deflected, bent and the like when directly placed on the carrying platform 200, thereby affecting the measurement result, and the wafer is adsorbed by uniformly and alternately arranging a plurality of adsorption assemblies 500 on the carrying platform 200, so that the wafer is tightly attached to the carrying platform 200, errors caused by deformation of the wafer can be eliminated, and the measurement accuracy is improved.

Further, referring to fig. 5, the adsorption assembly 500 includes an adsorption unit 510, the adsorption unit 510 is mounted on the carrying platform 200, and an end surface of the adsorption unit 510 is lower than an end surface of the carrying platform 200. The adsorption assembly 500 includes an adsorption unit 510, the adsorption unit 510 is a part mounted on the carrier platform 200, and suction is performed to form negative pressure to thereby complete adsorption of the wafer, and it is conceivable that the adsorption unit 510 does not exceed an end surface of the carrier platform 200, so as to avoid damage to the wafer and breakage of the wafer.

Referring to fig. 3, the rack 100 further includes a placement table 110, and the placement table 110 is mounted on the rack 100 and is used for carrying a control unit of the laser detection unit 310. The laser detection unit 310 is also provided with a control unit matched with the laser detection unit, and the object placing table 110 is arranged to bear the control unit, and meanwhile, other objects can be placed on the object placing table 110, so that the production space is saved; preferably, the position of the object placing table 110 on the frame 100 is shown as the figure, and the object placing table is installed below the bearing platform 200, so that the gravity center of the whole device is lower while the free space is utilized, deflection and shaking are not easy to generate, and the measurement accuracy is further improved.

The supporting platform 200 is provided with a protective film for protecting the supporting platform 200. In actual production, because there is comparatively sharp edge portion in the wafer, consequently when picking up and placing the wafer, the wafer can fish tail the loading end of loading platform 200, and these scratches can cause the influence to subsequent wafer surface, through setting up the protection film on loading platform 200 surface in this application, when the protection film by the fish tail after direct change protection film can, guaranteed the quality and the measuring precision of wafer in the measurement. The shape and size of the protective film depend on the size of the carrying platform 200, and it is conceivable that the protective film needs to avoid the position of the measuring hole on the carrying platform 200 and leave the position for the adsorption unit 510 to adsorb; the protection film is flexible material, preferably PE film etc. and is detachably connected with the bearing platform 200, and the protection film can be replaced regularly in a detachable connection mode to ensure the smooth surface of the protection film and prevent the surface of the wafer from being scratched in the measuring process.

Referring to fig. 3-4, the wafer thickness measuring apparatus further includes: the walking lifting assembly 600, the walking lifting assembly 600 is installed on the frame 100, and is used for controlling the horizontal movement and the vertical lifting of the frame 100. The wafer thickness measuring device in this application is used for measuring the thickness of wafer, because wafer processing and bearing equipment's position and high difference, consequently need wafer thickness measuring device can carry out level and vertical displacement, can drive the removal of wafer thickness measuring device on level and vertical position through setting up walking elevating assembly 600 to satisfy the needs of measurement.

Specifically, referring to fig. 4, the walking lifting assembly 600 includes: the pulleys 610 and the telescopic rods 620 are arranged at the bottom of the frame 100, and the telescopic rods 620 are connected with the bearing platform 200 to adjust the levelness of the bearing platform 200. In one embodiment, the horizontal displacement of the whole device is realized by arranging more than three pulleys 610 at the bottom of the frame 100, the pulleys 610 are preferably universal wheels and can move in any direction, and it is conceivable that the pulleys 610 are also provided with self-locking devices, and the pulleys 610 are limited to move by the self-locking devices after sliding to a designated position; by providing a plurality of telescoping rods 620 for use with the frame 100, vertical movement of the load platform 200 can be achieved to complete measurements of wafer thickness at different heights.

The technical effects are as follows:

1. the thickness measuring device for the round wafer adopts the coaxially arranged laser detection unit 310 to measure the thickness of the round wafer positioned on the bearing platform 200, and the measuring assembly 300 comprising the coaxial laser detection unit 310 can measure any position of the round wafer, particularly the round wafer with a large size, and meanwhile, the accuracy of coaxial laser detection is higher.

2. A wafer thickness measuring apparatus is provided, which is capable of carrying various types of wafers and measuring the wafers by providing a carrying platform 200 and a rotating assembly 400.

3. Through setting up the adsorption component 500, when measuring the wafer, can adsorb the wafer and make it can closely laminate with load-bearing platform 200, eliminate measuring error, promote measurement accuracy.

While preferred embodiments of the present application have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all such alterations and modifications as fall within the scope of the application. It will be apparent to those skilled in the art that various modifications and variations can be made in the present application without departing from the spirit or scope of the application. Thus, if such modifications and variations of the present application fall within the scope of the claims and the equivalents thereof, the present application is intended to cover such modifications and variations.

Claims (10)

1. A wafer thickness detection apparatus for measuring a wafer, comprising:

a frame (100);

the bearing platform (200) is arranged on the frame (100) and is used for bearing round wafers, and a plurality of measuring holes penetrating through the bearing platform (200) are formed in the bearing platform (200);

-a measurement assembly (300), the measurement assembly (300) being mounted to the frame (100), the measurement assembly (300) comprising:

the two laser detection units (310) are oppositely arranged along the bearing platform (200), and the two laser detection units (310) are coaxially arranged; and

the rotating assembly (400) is connected with the bearing platform (200) to drive the bearing platform (200) to rotate;

wherein, form the detection route between two laser detection units (310) of coaxial setting, the measuring aperture is located the detection route.

2. The wafer thickness detection apparatus as set forth in claim 1, wherein the measurement assembly (300) further includes:

a mounting arm (320), the mounting arm (320) being mounted to the frame (100);

the mounting fixture (330), the mounting fixture (330) install in the installation arm (320), the mounting fixture (330) is used for installing laser detection unit (310) and can adjust the axial and the horizontal position of laser detection unit (310).

3. The wafer thickness detection apparatus as claimed in claim 2, wherein the mounting arms (320) of the measurement assembly (300) are symmetrically arranged with respect to the carrying platform (200), the symmetrically arranged mounting arms (320) constituting a receiving cavity in which the carrying platform (200) is rotatable.

4. A wafer thickness inspection apparatus according to claim 3, wherein the mounting arms (320) are telescopic rods (620), and symmetrically mounted mounting arms (320) in the same measuring assembly (300) move synchronously to drive the laser inspection units (310) to move synchronously.

5. The wafer thickness detection apparatus as claimed in claim 1, further comprising an adsorption assembly (500), wherein a plurality of the adsorption assemblies (500) are disposed at intervals on the carrying platform (200) for adsorbing the wafer.

6. The wafer thickness detection apparatus as claimed in claim 5, wherein the adsorption assembly (500) includes an adsorption unit (510), the adsorption unit (510) is mounted on the carrying platform (200), and an end surface of the adsorption unit (510) is lower than an end surface of the carrying platform (200).

7. The wafer thickness detection apparatus as claimed in claim 1, wherein the frame (100) further comprises a placement table (110), the placement table (110) being mounted on the frame (100) for carrying a control unit of the laser detection unit (310).

8. The wafer thickness detection apparatus as claimed in claim 1, wherein a protective film is mounted on the carrying platform (200) for protecting the carrying platform (200).

9. The wafer thickness detection apparatus according to claim 1, wherein the wafer thickness measurement apparatus further comprises: the walking lifting assembly (600) is arranged on the frame (100) and used for controlling the horizontal movement and the vertical lifting of the frame (100).

10. The wafer thickness detection apparatus as claimed in claim 9, wherein the traveling crane assembly (600) includes:

a pulley (610), a plurality of the pulleys (610) are installed at the bottom of the frame (100);

and the telescopic rods (620) are connected with the bearing platform (200) to adjust the levelness of the bearing platform (200).