CN220324466U - Photovoltaic cell and cell structure thereof - Google Patents
Photovoltaic cell and cell structure thereof Download PDFInfo
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- CN220324466U CN220324466U CN202320710676.4U CN202320710676U CN220324466U CN 220324466 U CN220324466 U CN 220324466U CN 202320710676 U CN202320710676 U CN 202320710676U CN 220324466 U CN220324466 U CN 220324466U
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 57
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 230000005641 tunneling Effects 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 229920005591 polysilicon Polymers 0.000 claims description 26
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000011065 in-situ storage Methods 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 19
- 239000001257 hydrogen Substances 0.000 abstract description 19
- 238000000034 method Methods 0.000 abstract description 14
- 238000002161 passivation Methods 0.000 abstract description 13
- 238000010248 power generation Methods 0.000 abstract description 13
- 230000008569 process Effects 0.000 abstract description 11
- 238000000137 annealing Methods 0.000 abstract description 10
- 238000005984 hydrogenation reaction Methods 0.000 abstract description 10
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 239000000969 carrier Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
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- Photovoltaic Devices (AREA)
Abstract
The application provides a photovoltaic cell and a cell structure thereof, wherein the cell structure comprises a substrate layer, an emitter layer is covered on the first surface of the substrate layer, a first tunneling oxide layer is covered on one side, far away from the substrate layer, of the emitter layer, and a first doping layer is arranged on one side, far away from the emitter layer, of the first tunneling oxide layer; the second surface of the substrate layer is covered with a second tunneling oxide layer, and a second doping layer is arranged on one side, far away from the substrate layer, of the second tunneling oxide layer; the second doped layer is a silicon carbide doped layer. The cell structure adopts a double-sided passivation structure, and the first surface of the cell structure adopts a silicon carbide doped layer. In the hydrogenation annealing process, the silicon carbide doped layer can generate a carbon-hydrogen bond, and the stability of the carbon-hydrogen bond is higher than that of the silicon-hydrogen bond, so that the stability of the battery structure in the hydrogenation annealing process can be improved. In addition, the external quantum efficiency of the silicon carbide doped layer at the short wavelength is higher than that of the traditional polycrystalline silicon structure battery, and the silicon carbide doped layer is beneficial to improving the power generation efficiency.
Description
Technical Field
The present application relates to the field of photovoltaic cell fabrication, and in particular, to a cell structure. The application also provides a photovoltaic cell comprising the above cell structure.
Background
TOPCon (Tunnel Oxide Passivating Contacts, tunneling oxide passivation contact) structure has good surface passivation effect and good thermal stability, and can realize selective contact of carrier. The passivation effect of the oxide layer and the field passivation effect of the highly doped polysilicon doped layer can greatly reduce the minority carrier recombination rate, and meanwhile, the highly doped polysilicon doped layer has good conductivity for majority carriers, so that the TOPCon battery has higher open circuit voltage and filling factor.
The TOPCO battery needs to be subjected to a hydrogenation annealing process in the production process, and the hydrogenation annealing process not only can improve the light absorption coefficient of the TOPCO battery, but also can enable the TOPCO battery surface material to have the advantages of adjustable optical band gap and conductivity and the like. But polysilicon materials have poor stability during high temperatures.
Therefore, how to improve the stability of TOPCon cells in the hydrogenation annealing process is a technical problem that the skilled person is urgent to solve.
Disclosure of Invention
The application aims at least solving one of the technical problems in the prior art, and provides a battery structure, wherein a silicon carbide doped layer is arranged on the surface of the battery structure by adopting a first surface, and in the hydrogenation annealing process, the silicon carbide doped layer can generate carbon-hydrogen bonds, so that the stability of the carbon-hydrogen bonds is higher, and the stability in the process can be improved. It is another object of the present application to provide a photovoltaic cell comprising the above cell structure.
In order to achieve the purpose of the application, a battery structure is provided, and the battery structure is used for a photovoltaic battery, and comprises a substrate layer, wherein the first surface of the substrate layer is covered with an emitter layer, one side, far away from the substrate layer, of the emitter layer is covered with a first tunneling oxide layer, one side, far away from the emitter layer, of the first tunneling oxide layer is provided with a first doping layer, and the first surface is a light-facing surface;
the second surface of the substrate layer is covered with a second tunneling oxide layer, a second doping layer is arranged on one side, far away from the substrate layer, of the second tunneling oxide layer, and the second surface is far away from the first surface;
the first doped layer is a silicon carbide doped layer.
In some embodiments, the silicon carbide doped layer is a polycrystalline silicon carbide doped layer.
In some embodiments, the polysilicon carbide doped layer employs an in situ doping process.
In some embodiments, the base layer is an N-type silicon base.
In some embodiments, the second doped layer is an in-situ doped polycrystalline silicon carbide doped layer.
In some embodiments, the first tunneling oxide layer and the second tunneling oxide layer are both silicon dioxide layers.
In some embodiments, the emitter layer has a doping concentration greater than or equal to 5.5X10 20 /cm 3 。
In some embodiments, the energy gap of the N-type silicon substrate is less than the energy gap of the polysilicon doped layer.
In some embodiments, a first electrode is deposited on a side of the first doped layer remote from the first tunneling oxide layer;
and a second electrode is deposited on one side of the second doped layer far away from the second tunneling oxide layer.
The application also provides a photovoltaic cell, which comprises any one of the cell structures.
The application has the following beneficial effects:
the battery structure is used for a photovoltaic cell and comprises a substrate layer, wherein the first surface of the substrate layer is covered with an emitter layer, one side, far away from the substrate layer, of the emitter layer is covered with a first tunneling oxide layer, and one side, far away from the emitter layer, of the first tunneling oxide layer is provided with a first doping layer; the second surface of the substrate layer is covered with a second tunneling oxide layer, and a second doping layer is arranged on one side, far away from the substrate layer, of the second tunneling oxide layer; the first doped layer is a silicon carbide doped layer.
The cell structure adopts a double-sided passivation structure, and the first surface of the cell structure adopts a silicon carbide doped layer. In the hydrogenation annealing process, the silicon carbide doped layer can generate a carbon-hydrogen bond, and the stability of the carbon-hydrogen bond is higher than that of the silicon-hydrogen bond, so that the stability of the battery structure in the hydrogenation annealing process can be improved. In addition, the external quantum efficiency of the silicon carbide doped layer at the short wavelength is higher than that of the traditional polycrystalline silicon structure battery, and the silicon carbide doped layer is beneficial to improving the power generation efficiency.
The application also provides a photovoltaic cell comprising the cell structure and has the advantages.
Drawings
Fig. 1 is a schematic structural view of a battery structure provided in the present application.
Wherein, the reference numerals in fig. 1 are:
the semiconductor device comprises an N-type silicon substrate 1, an emitter layer 2, a first tunneling oxide layer 3, a polycrystalline silicon carbide doped layer 4, a second tunneling oxide layer 5 and a polycrystalline silicon doped layer 6.
Detailed Description
In order to better understand the technical solutions of the present application, the following describes the photovoltaic cell and the cell structure thereof provided in the present application with reference to the accompanying drawings. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The cell structure provided by the application is used for a photovoltaic cell. As shown in fig. 1, the cell structure is embodied as a double-sided passivated TOPCon cell. The battery structure comprises a substrate layer, wherein the first surface of the substrate layer is sequentially provided with an emitter layer 2, a first tunneling oxide layer 3 and a first doping layer along the direction far away from the substrate layer. The second surface of the base layer is covered with a second tunneling oxide layer 5 and a second doped layer in sequence along a direction away from the base layer. The first surface and the second surface of the battery structure are provided with corresponding electrodes (not shown in the figure), and the first surface may be a light-facing surface of the battery structure. The battery structure can generate electricity on two sides, and the light on the back of the battery structure is utilized to generate electricity, so that the electricity generation efficiency can be improved. The tunneling oxide layer passivates the cell structure, so that the interface state density between the substrate layer and the doped layer can be reduced, the concentration of majority carriers is far higher than that of minority carriers, and the selective contact of the majority carriers is formed while the probability of recombination of electrons and holes is reduced, so that the open-circuit voltage of the cell structure is improved. The double sides of the battery structure are passivated, so that the open-circuit voltage and the power generation efficiency can be further improved.
The first doped layer is a silicon carbide doped layer, and the silicon carbide doped layer is used as a passivation contact point. The silicon carbide doped layer can be doped with N type or P type according to the requirement, and the conductivity of the silicon carbide doped layer can be improved after doping. In the process of hydrogenation annealing, hydrogen diffuses into the silicon carbide doped layer, and forms a carbon-hydrogen bond with carbon atoms. The existing doped layer only generates a silicon hydrogen bond, and in the application, the silicon carbide doped layer generates a carbon hydrogen bond, and the strength of the carbon hydrogen bond is higher, so that the strength of the silicon carbide doped layer can be improved, and the damage of the silicon carbide doped layer is reduced.
Alternatively, the silicon carbide doped layer may be specifically the polysilicon doped layer 4, which has a larger energy gap, thus having better conductive properties and being capable of effectively reducing the resistance of the surface of the battery structure. And the non-radiation attenuation rate in the polycrystalline silicon carbide doped layer 4 is low, and the speed of photo-thermal conversion is low, so that the power generation efficiency of the photovoltaic cell can be improved. In addition, the price of polycrystalline silicon carbide material is lower, is favorable to reducing the cost of battery structure, is convenient for the popularization of battery structure that this application provided.
In this embodiment, the battery structure sets up the carborundum doped layer as first doped layer at first surface, and carborundum doped layer can form the silicon hydrogen bond after hydrogenation annealing, and the stability of silicon hydrogen bond is better than the carbon hydrogen bond, therefore can improve the intensity of first doped layer, reduces the damage of first doped layer, prolongs the life of battery structure. And silicon carbide has a wider optical band gap, and can reduce parasitic absorption of light, thereby improving the power generation efficiency of the battery structure.
In some embodiments, the base layer is an N-type silicon substrate 1. The N-type silicon substrate 1 has less power generation efficiency loss when it is subjected to temperature change than the P-type silicon substrate, and is superior to most of the P-type silicon substrates under low light conditions. The N-type silicon substrate 1 has conductivity. Specifically, the N-type silicon substrate 1 may be made of a material having a smaller energy gap than the polysilicon carbide doped layer 4. Because the energy gap of the N-type silicon substrate 1 is smaller than that of the polycrystalline silicon carbide doped layer 4, electrons in the N-type silicon substrate 1 are more easily excited, electrons in the polycrystalline silicon carbide doped layer 4 are less excited, the concentration difference of electrons forming an excited state between the N-type silicon substrate 1 and the polycrystalline silicon carbide doped layer 4 is formed, electrons are more easily flowing to the polycrystalline silicon carbide doped layer 4, and the electrons flow to form a current, so that the current is more concentrated on the polycrystalline silicon carbide doped layer 4. In addition, the doped polysilicon layer 4 has stronger conductive property due to doping, so that current is easier to be led out. The polycrystalline silicon carbide doped layer 4 conducts current to the grid line, so that loss in the current transmission process can be reduced, and the power generation efficiency of the battery structure is further improved. Of course, the substrate layer may also be a P-type silicon substrate, which is not limited herein. In addition, in the embodiment where the substrate layer is a P-type silicon substrate, the structures of the other layers need to be adjusted accordingly, which is not described herein.
In some embodiments, the second doped layer is a polysilicon doped layer 6, and the polysilicon doped layer 6 may be doped with a high concentration as the second surface of the cell structure. The highly doped polysilicon doped layer 6 can greatly reduce the minority carrier recombination rate while the highly doped polysilicon layer has good conductivity for majority carriers, thereby providing the photovoltaic cell with a higher open circuit voltage and fill factor. The doping manner and doping concentration of the polysilicon doped layer 6 can be referred to in the prior art, and will not be described herein.
In some embodiments, the first tunnel oxide layer 3 and the second tunnel oxide layer 5 are both silicon dioxide layers. Holes in the N-type silicon substrate 1 are majority carriers, electrons are minority carriers, and the concentration of the majority carriers in the N-type silicon substrate 1 is far higher than that of the minority carriers. The silicon dioxide layer is used as a tunneling oxide layer, the interface state density between the N-type silicon substrate 1 and the doped layer is reduced through chemical passivation, majority carriers can pass through the tunneling oxide layer through a tunneling effect to realize current transmission, and the probability of minority carriers passing through the tunneling oxide layer is low, so that the probability of recombination of electrons and holes can be reduced, and meanwhile, selective contact to the majority carriers can be formed, so that the power generation efficiency of the battery structure is improved. The first tunnel oxide layer 3 and the second tunnel oxide layer 5 may be made of other materials in the prior art, which is not limited herein.
In some embodiments, the emitter layer 2 may be doped with a high concentration, increasing the number of carriers in the emitter layer 2, and increasing the conductivity of the emitter layer 2. Alternatively, the doping concentration of the emitter layer 2 may be greater than or equal to 5.5x10 20 /cm 3 . Of course, the doping concentration of the emitter may be set by the user as required, and is not limited herein.
In some embodiments, the polysilicon carbide doped layer 4 is an in-situ doped polysilicon carbide doped layer 4. Specifically, the polysilicon carbide doped layer 4 is prepared by in-situ doping. In-situ doping can make the doping more uniform, and avoid the change of microstructure caused by non-uniform doping, thereby ensuring that the polycrystalline silicon carbide has more stable mechanical properties. The specific method of in-situ doping can refer to the prior art, and will not be described herein. Of course, the user may also use other doping methods in the prior art as needed, which is not limited herein. The present application employs an in-situ doped polysilicon carbide doped layer 4 as a passivation contact. Under certain conditions, the doped layer 4 of polycrystalline silicon carbide can provide a high passivation quality comparable to that of a polysilicon film. This feature is advantageous in that the battery structure obtains a higher open circuit voltage.
In some embodiments, the first electrode and the second electrode may be formed by deposition. The first electrode and the second electrode are respectively attached to the polysilicon doped layer 4 and the polysilicon doped layer 6, and are used for collecting specific currents in the polysilicon doped layer 4 and the polysilicon doped layer 6 and leading out the currents. The first electrode is formed by depositing one side of the first doped layer far away from the first tunneling oxide layer, and the second electrode is formed by depositing one side of the second doped layer far away from the second tunneling oxide layer. Of course, the first electrode and the second electrode may be formed by transfer printing, etc., and are not limited thereto. The structures of the first electrode and the second electrode may refer to the prior art, and are not described herein.
In this embodiment, the polycrystalline silicon carbide doped layer 4 is used on the first surface of the battery structure, and the polycrystalline silicon carbide doped layer 4 can generate a carbon-hydrogen bond in the preparation process, and the stability of the carbon-hydrogen bond is higher than that of the silicon-hydrogen bond, so that the stability of the battery structure in the preparation process can be improved by the polycrystalline silicon carbide doped layer 4. In addition, the energy gap of the polycrystalline silicon carbide doped layer 4 is larger, and the energy gap of the N-type silicon substrate 1 is smaller than that of the polycrystalline silicon carbide doped layer 4, so that the internal resistance of the battery structure can be reduced. The polycrystalline silicon carbide doped layer 4 has stronger conductivity and can reduce the resistance of the surface of the battery structure. The external quantum efficiency of the in-situ doped polycrystalline silicon carbide doped layer 4 is higher than that of a traditional polycrystalline silicon structure battery, and the in-situ doped polycrystalline silicon carbide doped layer is beneficial to improving the power generation efficiency of the battery structure. The battery structure adopts double-sided passivation, which is beneficial to improving the open-circuit voltage and the power generation efficiency.
In one embodiment of the present application, as shown in fig. 1, the battery structure includes an N-type silicon substrate 1, a first surface of the N-type silicon substrate 1 is covered with an emitter layer 2, the emitter layer 2 is doped with P-type material, and the doping concentration may be greater than or equal to 5.5x10 20 /cm 3 . The emitter layer 2 may be doped with a high concentration to improve its conductivity. The emitter layer 2 is provided with a first tunneling oxide layer 3 on one side far away from the N-type silicon substrate 1, the first tunneling oxide layer 3 is specifically made of silicon dioxide, and the first tunneling oxide layer 3 can play a passivation role on a light-facing surface, so that the power generation efficiency of the battery structure is improved. The side of the first tunneling oxide layer 3, which is far away from the emitter layer 2, is provided with an in-situ doped polycrystalline silicon carbide doped layer 4, which is used as a passivation contact point to facilitate the cell structure to obtain a higher open circuit voltage. In addition, the polycrystalline silicon carbide doped layer 4 has high external quantum efficiency at short wavelength, which contributes to the improvement of the power generation efficiency. The side of the polycrystalline silicon carbide doped layer 4 far away from the first tunneling oxide layer 3 is provided with a first electrode, and the first electrode is used for collecting current of the light-receiving surface and guiding the current out. The first electrode may be a silver electrode, a copper electrode, a silver-coated copper electrode, or the like. N-typeThe second surface of the silicon substrate 1 is covered with a second tunneling oxide layer 5, the second tunneling oxide layer 5 is specifically made of silicon dioxide, and the second tunneling oxide layer 5 can play a passivation role on a backlight surface, so that the power generation efficiency of the battery structure is further improved. The side of the second tunneling oxide layer 5, which is far away from the N-type silicon substrate 1, is provided with a high-concentration doped polysilicon doped layer 6. A second electrode is arranged on one side of the polysilicon doped layer 6 far away from the second tunneling oxide layer 5, and the second electrode is used for collecting current of the backlight surface and guiding the current out. The second electrode may be a silver electrode, a copper electrode, a silver-coated copper electrode, or the like.
The application also provides a photovoltaic cell, which comprises a frame and the cell structure in any one of the embodiments; the structure of the other parts of the photovoltaic cell can be referred to in the prior art, and will not be described in detail herein.
It should be noted that in this specification relational terms such as first and second are used solely to distinguish one entity from another entity without necessarily requiring or implying any actual such relationship or order between such entities.
The photovoltaic cell and the cell structure provided by the application are described in detail above. Specific examples are set forth herein to illustrate the principles and embodiments of the present application, and the description of the examples above is only intended to assist in understanding the methods of the present application and their core ideas. It should be noted that it would be obvious to those skilled in the art that various improvements and modifications can be made to the present application without departing from the principles of the present application, and such improvements and modifications fall within the scope of the claims of the present application. .
Claims (10)
1. The cell structure is used for a photovoltaic cell and is characterized by comprising a substrate layer, wherein the first surface of the substrate layer is covered with an emitter layer, one side, far away from the substrate layer, of the emitter layer is covered with a first tunneling oxide layer, one side, far away from the emitter layer, of the first tunneling oxide layer is provided with a first doping layer, and the first surface is a light-facing surface;
the second surface of the substrate layer is covered with a second tunneling oxide layer, a second doping layer is arranged on one side, far away from the substrate layer, of the second tunneling oxide layer, and the second surface is far away from the first surface;
the first doped layer is a silicon carbide doped layer.
2. The cell structure of claim 1 wherein the silicon carbide doped layer is a polycrystalline silicon carbide doped layer.
3. The cell structure of claim 2, wherein the polycrystalline silicon carbide doped layer is an in-situ doped polycrystalline silicon carbide doped layer.
4. The cell structure of claim 1, wherein the base layer is an N-type silicon base.
5. The cell structure of claim 4 wherein the second doped layer is a polysilicon doped layer.
6. The cell structure of claim 1 wherein the first tunnel oxide layer and the second tunnel oxide layer are both silicon dioxide layers.
7. The cell structure of claim 1, wherein the doping concentration of the emitter layer is greater than or equal to 5.5 x 10 20 /cm 3 。
8. The cell structure of claim 5 wherein the N-type silicon substrate has a smaller energy gap than the polysilicon doped layer.
9. The cell structure of any one of claims 1 to 7 wherein a side of the first doped layer remote from the first tunneling oxide layer is deposited with a first electrode;
and a second electrode is deposited on one side of the second doped layer far away from the second tunneling oxide layer.
10. A photovoltaic cell comprising the cell structure of any one of claims 1 to 9.
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| CN202320710676.4U CN220324466U (en) | 2023-04-03 | 2023-04-03 | Photovoltaic cell and cell structure thereof |
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| CN202320710676.4U CN220324466U (en) | 2023-04-03 | 2023-04-03 | Photovoltaic cell and cell structure thereof |
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