CN220324418U

CN220324418U - High-temperature annealing vertical furnace tube device for improving wafer scratch

Info

Publication number: CN220324418U
Application number: CN202321709304.6U
Authority: CN
Inventors: 尹俊; 陈琪
Original assignee: Shanghai Huali Integrated Circuit Manufacturing Co Ltd
Current assignee: Shanghai Huali Integrated Circuit Manufacturing Co Ltd
Priority date: 2023-06-30
Filing date: 2023-06-30
Publication date: 2024-01-09
Anticipated expiration: 2033-06-30

Abstract

The application provides a vertical furnace tube device for high-temperature annealing for improving wafer scratch, which comprises: the vertical cavity comprises an outer tube and an inner tube assembled in the outer tube and matched with the outer tube; the wafer boat moves up and down along the central line of the vertical cavity; and the hollow sleeve moves up and down along the lifting channel of the wafer boat, and the diameter of the hollow sleeve is smaller than the diameter of the inner tube in the vertical cavity and larger than the maximum width of the wafer boat. Through the hollow sleeve pipe which moves up and down along the lifting channel of the wafer boat, a temperature buffer area can be created, and the cooling speed of the wafer for completing the high-temperature annealing process can be slowed down, so that the deformation of the wafer is reduced, the wafer scratch formed by rapid lifting and cooling is reduced, and the generation of the wafer defects is reduced.

Description

High-temperature annealing vertical furnace tube device for improving wafer scratch

Technical Field

The application relates to the technical field of semiconductor manufacturing, in particular to a high-temperature annealing vertical furnace tube device for improving wafer scratch.

Background

The high temperature annealing process in semiconductor manufacturing is usually realized by a high temperature annealing vertical furnace tube machine, and a wafer boat in a furnace tube needs to be lifted up and down in a normal temperature region-loading area (loading area) and a high temperature region-reaction chamber (tube chamber) of the furnace tube machine to realize wafer transportation, wherein the normal temperature region in the furnace tube is usually maintained at about 25 ℃, and the temperature in the high temperature region is above 600 ℃. The high temperature area and the normal temperature area are isolated by a cutter device (similar to a heat shield), the cutter device is opened when the wafer boat is lifted up and down, and the wafer boat conveys normal temperature wafers to the high temperature area before the process is started; after the process is completed, the wafer boat carries the high temperature wafer to the normal temperature area. The wafer is deformed by the huge temperature difference during the transportation of the wafer boat, the deformation generates the warpage of the wafer, and scratches are caused by scraping with the baffle plates positioned on the inner side wall of the wafer boat.

Disclosure of Invention

In view of the above-mentioned drawbacks of the prior art, an object of the present application is to provide a vertical furnace tube device for high temperature annealing for improving wafer scratch, which is used for solving the problem of scratch caused by wafer scratch and baffle scratch on the inner side wall of a wafer boat in the furnace tube in the prior art.

To achieve the above and other related objects, the present application provides a vertical furnace tube apparatus for high temperature annealing for improving wafer scratch, comprising:

the vertical cavity comprises an outer tube and an inner tube assembled in the outer tube and matched with the outer tube;

the wafer boat moves up and down along the central line of the vertical cavity;

and the hollow sleeve moves up and down along the lifting channel of the wafer boat, and the diameter of the hollow sleeve is smaller than the diameter of the inner tube in the vertical cavity and larger than the maximum width of the wafer boat.

Preferably, the vertical cavity is fixed on a furnace tube base.

Preferably, when the furnace is idle, the hollow sleeve is positioned in the vertical cavity, and the wafer boat is positioned in the furnace tube base.

Preferably, before the high-temperature annealing process starts, the hollow sleeve descends from the vertical cavity into the furnace tube base to preheat the wafer boat; after the preheating is completed, the hollow sleeve and the wafer boat are lifted into the vertical cavity together to start the high-temperature annealing process.

Preferably, after the high-temperature annealing process is finished, the hollow sleeve pipe is firstly lowered into the furnace tube base from the vertical cavity, a temperature transition area is formed in the furnace tube base, and then the wafer boat is lowered into the furnace tube base for cooling.

Preferably, after cooling is completed, the hollow sleeve is raised again into the vertical cavity to wait for the next process to start.

As described above, the high-temperature annealing vertical furnace tube device for improving wafer scratch has the following beneficial effects: through the hollow sleeve pipe which moves up and down along the lifting channel of the wafer boat, a temperature buffer area can be created, and the cooling speed of the wafer for completing the high-temperature annealing process can be slowed down, so that the deformation of the wafer is reduced, the wafer scratch formed by rapid lifting and cooling is reduced, and the generation of the wafer defects is reduced.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic cross-sectional view of a conventional vertical furnace tube apparatus for high temperature annealing;

FIG. 2 is a schematic diagram showing a wafer and a wafer boat being scratched to form a scratch;

FIG. 3 is a schematic cross-sectional view of a vertical furnace apparatus for high temperature annealing for improving wafer scratch according to an embodiment of the present disclosure;

fig. 4 (a) -fig. 4 (e) are schematic diagrams illustrating the operation process of the vertical furnace tube apparatus for high temperature annealing for improving wafer scratch according to the embodiment of the present application.

Detailed Description

Other advantages and effects of the present application will become apparent to those skilled in the art from the present disclosure, when the following description of the embodiments is given by way of specific examples. The present application may be carried out or applied in other and different embodiments, and the details in the present description may be modified or changed from various viewpoints and applications, without departing from the spirit of the present utility model.

The following description of the embodiments of the present application will be made apparent and complete in conjunction with the accompanying drawings, in which embodiments described are some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

In the description of the present application, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," and the like indicate orientations or positional relationships, which are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the devices or elements being referred to must have a particular orientation, be configured and operated in a particular orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.

In addition, the technical features described below in the different embodiments of the present application may be combined with each other as long as they do not collide with each other.

The current wafer manufacturing process is usually followed by a high temperature annealing process to help the diffusion process after the ion implantation and high aspect ratio filling process. The high-temperature annealing process is usually implemented in a high-temperature annealing vertical furnace tube, the process temperature is usually 800-1100 ℃, the process time is relatively long, 8-12 hours are needed, and 100-125 products can be carried by one process of the high-temperature annealing vertical furnace tube and the process can be completed at the same time. Because the temperature raising and lowering process time required by the high-temperature annealing is long, the temperature of the high-temperature annealing vertical furnace tube in an idle state is usually set to 600-700 ℃. As shown in fig. 1, during the process of lifting the wafer boat, the wafer and the wafer boat are affected by the huge temperature difference between the inside and outside of the reaction chamber of the vertical furnace tube, and as shown in fig. 2, the wafer is deformed and touches a baffle (Slot) located on the inner side wall of the wafer boat, so that scratches are caused.

The prior art can only solve the problems by adjusting the temperature of the lifting boat downwards, and the boat is lifted after the temperature of the reaction cavity is reduced from 600 ℃ to 400 ℃, but the method needs longer cooling time and affects the productivity comparatively.

In order to solve the problem, the application provides a high-temperature annealing vertical furnace tube device for improving wafer scratch.

Referring to fig. 3, a schematic cross-sectional structure of a vertical furnace apparatus for high temperature annealing for improving wafer scratch according to an embodiment of the present disclosure is shown.

As shown in FIG. 3, the vertical furnace tube apparatus for high temperature annealing for improving wafer scratch mainly comprises:

the vertical cavity 1 is assembled by an outer pipe and an inner pipe, wherein the inner pipe is arranged inside the outer pipe and matched with the outer pipe. The vertical cavity 1 is fixed on a furnace tube base 10, preferably, the cross-sectional area of the furnace tube base 10 is larger than that of the vertical cavity 1, so as to increase the stability of the whole device.

The wafer boat 2 moves up and down along the central line of the vertical cavity 1, and wafers are placed in the wafer boat 2.

The hollow sleeve 3 moves up and down along the lifting channel of the wafer boat 2, and the diameter of the hollow sleeve 3 is smaller than the diameter of the inner tube in the vertical cavity 1 and larger than the maximum width of the wafer boat 2.

Illustratively, the hollow sleeve 3 is made of silicon carbide.

The working process of the high-temperature annealing vertical furnace tube device for improving the wafer scratch is as follows: as shown in fig. 4 (a), when idle, the hollow sleeve 3 is positioned in the high-temperature vertical cavity 1, and the wafer boat 2 is positioned in the furnace tube base 10 at normal temperature; as shown in fig. 4 (b), before the high temperature annealing process starts, the hollow sleeve 3 descends from the vertical cavity 1 into the furnace tube base 10, and the heat carried by the hollow sleeve can be preheated by the wafer boat 2 and the wafers loaded by the wafer boat 2; as shown in fig. 4 (c), after the preheating is completed, the hollow sleeve 3 and the wafer boat 2 are lifted up together into the vertical cavity 1 to start the high temperature annealing process; as shown in fig. 4 (d), after the process is finished, the hollow sleeve 3 is firstly lowered from the vertical cavity 1 into the furnace tube base 10, the heat carried by the hollow sleeve can form a temperature transition zone in the furnace tube base 10, and then the wafer boat 2 is lowered into the furnace tube base 10 for cooling; as shown in fig. 4 (e), after the cooling is completed, the hollow sleeve 3 is raised again into the vertical cavity 1, waiting for the start of the next process.

It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concepts of the present application by way of illustration, and only the components related to the present utility model are shown in the drawings rather than being drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.

In summary, the vertical furnace tube device for high temperature annealing for improving wafer scratch provided by the present application can create a temperature buffer area by the hollow sleeve 3 moving up and down along the lifting channel of the wafer boat 2, so that the wafer cooling speed for completing the high temperature annealing process can be slowed down, thereby reducing the deformation of the wafer, further reducing the wafer scratch formed by rapid lifting and cooling, and reducing the generation of such wafer defects. Therefore, the method effectively overcomes various defects in the prior art and has high industrial utilization value.

The foregoing embodiments are merely illustrative of the principles of the present application and their effectiveness, and are not intended to limit the application. Modifications and variations may be made to the above-described embodiments by those of ordinary skill in the art without departing from the spirit and scope of the present application. Accordingly, it is intended that all equivalent modifications and variations which can be accomplished by persons skilled in the art without departing from the spirit and technical spirit of the present disclosure shall be covered by the claims of this application.

Claims

1. The utility model provides a improve vertical boiler tube device of high temperature annealing of wafer scratch which characterized in that, vertical boiler tube device includes:

the vertical cavity comprises an outer tube and an inner tube assembled inside the outer tube and matched with the outer tube;

the wafer boat moves up and down along the central line of the vertical cavity;

2. The vertical furnace apparatus of claim 1, wherein the vertical chamber is secured to a furnace base.

3. The vertical furnace apparatus of claim 2, wherein the hollow sleeve is positioned within the vertical cavity and the boat is positioned within the furnace base when idle.

4. The vertical furnace apparatus of claim 2, wherein the hollow sleeve descends from the vertical chamber into the furnace base to preheat the boat before a high temperature annealing process begins; after the preheating is completed, the hollow sleeve and the wafer boat rise together into the vertical cavity to start the high-temperature annealing process.

5. The apparatus of claim 4, wherein after the high temperature annealing process is completed, the hollow sleeve is lowered from the vertical cavity into the furnace base, a temperature transition zone is formed inside the furnace base, and then the boat is lowered into the furnace base for cooling.

6. The vertical furnace apparatus of claim 5, wherein after the cooling is completed, the hollow sleeve is raised again into the vertical chamber to wait for the next process to begin.