CN110047783B - A silicon carbide sheet rapid heating annealing device - Google Patents

A silicon carbide sheet rapid heating annealing device Download PDF

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Publication number
CN110047783B
CN110047783B CN201910317907.3A CN201910317907A CN110047783B CN 110047783 B CN110047783 B CN 110047783B CN 201910317907 A CN201910317907 A CN 201910317907A CN 110047783 B CN110047783 B CN 110047783B
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chamber
silicon carbide
silicon
preheating
silicon wafer
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CN110047783A (en
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程远贵
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Hunan Heyi Tongchuang Intelligent Technology Co ltd
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Hunan Xinrui Microelectronics Technology Co ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0456—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers in-line arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a rapid heating and annealing device for a silicon carbide wafer, which comprises the following components: the device comprises a cooling chamber, a preheating chamber and a heating chamber which are connected in sequence, wherein the cooling chamber is positioned at one side of the preheating chamber, the heating chamber is positioned above the preheating chamber, and rotatable silicon wafer trays are arranged in the cooling chamber and the preheating chamber; a mechanical arm is arranged between the cooling chamber and the preheating chamber; the bottom of the silicon wafer tray of the preheating chamber is provided with a lifting frame. According to the technical scheme, the rotatable silicon wafer tray is arranged in each chamber, the mechanical arm is arranged between the chambers, and the preheating chamber and the cooling chamber can simultaneously carry out feeding and discharging steps, so that the feeding and discharging continuity is ensured. Through the cooling chamber, the preheating chamber and the heating chamber which are independently arranged, a plurality of silicon carbide chips can be heated, heated and cooled respectively at the same time, so that the simultaneous operation of multiple tasks is realized, the processing efficiency is greatly improved, and the heating and annealing efficiency of the silicon carbide chips is obviously improved.

Description

Quick heating annealing device for silicon carbide chip
Technical Field
The invention relates to the field of silicon carbide chip processing, in particular to a rapid heating and annealing device for a silicon carbide chip.
Background
In the conventional thermal annealing process of the silicon carbide, the silicon carbide is put into a heating furnace for heating, the temperature curve is shown in fig. 2, after the whole annealing process curve is finished, the furnace is opened, the silicon carbide with the annealing process is taken out, and meanwhile, the silicon carbide to be annealed is put into the furnace, and the process is repeated.
The high-temperature annealing process method is adopted, so that the production efficiency is lower, because
1. When the silicon carbide chip is replaced each time, the silicon carbide chip newly placed in the furnace is in a normal temperature state, after the replacement is finished, the heating is started, the silicon carbide chip rises along with the furnace temperature in a curve shown in fig. 2, then the temperature is reduced to carry out an annealing step, and the heating furnace is subjected to heating and cooling steps each time, so that a large amount of unnecessary time is consumed;
2. in the processes of opening the furnace, taking sheets, placing sheets and closing the furnace, the furnace is always in an idle state and is not fully utilized.
Disclosure of Invention
In order to solve the problems, the invention aims to provide a rapid heating and annealing device for silicon carbide wafers, which shortens the heating time, makes full use of each part of the device and improves the production efficiency.
The technical scheme adopted by the invention is as follows:
A rapid heating annealing device for a silicon carbide wafer comprises: the device comprises a cooling chamber, a preheating chamber and a heating chamber which are connected in sequence, wherein the cooling chamber is positioned at one side of the preheating chamber, the heating chamber is positioned above the preheating chamber, and rotatable silicon wafer trays are arranged in the cooling chamber and the preheating chamber and are used for transferring silicon carbide wafers from one side of the chamber to the other side of the chamber; a mechanical arm is arranged between the cooling chamber and the preheating chamber and is used for clamping the silicon carbide chip from the silicon chip tray to the silicon chip tray of the adjacent chamber; the bottom of the silicon wafer tray of the preheating chamber is provided with a lifting frame for enabling the silicon carbide wafer to vertically move between the preheating chamber and the heating chamber.
Further, two silicon wafer grooves which are symmetrical to each other are formed in the silicon wafer tray, and a rotating shaft is arranged at the bottom of the silicon wafer tray and used for enabling the positions of the two silicon wafer grooves to be interchanged through rotation.
Further, a through hole is formed in the middle of the silicon wafer groove, so that the lifting frame can penetrate and jack up the silicon carbide wafer.
Further, the lifting frame is positioned below a silicon wafer groove of the preheating chamber, wherein the silicon wafer tray of the preheating chamber is far away from the cooling chamber.
Further, the preheating device also comprises a feeding and discharging chamber connected with the cooling chamber, wherein the feeding and discharging chamber is connected with one side of the cooling chamber away from the preheating chamber.
Further, a rotatable silicon wafer tray is arranged in the feeding and discharging chamber for transferring silicon carbide wafers from one side of the chamber to the other side.
Further, a mechanical arm is arranged between the feeding and discharging chamber and the cooling chamber and used for clamping the silicon carbide chip from the silicon chip tray to the silicon chip tray of the adjacent chamber.
Further, the silicon wafer trays of the feeding and discharging chamber, the cooling chamber and the preheating chamber are all positioned on the same horizontal plane.
The invention has the beneficial effects that:
according to the technical scheme, the rotatable silicon wafer tray is arranged in each chamber, the mechanical arm is arranged between the chambers, and the preheating chamber and the cooling chamber can simultaneously carry out feeding and discharging steps, so that the feeding and discharging continuity is ensured.
Through independent cooling chamber, preheating chamber and heating chamber that sets up for the preheating of carborundum piece, heating, cooling step can be gone on in succession through the transfer, have reduced traditional boiler and have warmed up and the time that the cooling needs to consume, and a plurality of carborundum pieces can carry out heat, heating, cooling step respectively in same time, have realized going on in the same time of multitasking, very big improvement machining efficiency, make the heating annealing efficiency of carborundum piece obtain showing promotion.
Drawings
FIG. 1 is a schematic diagram of a rapid heating annealing device for silicon carbide wafers;
Fig. 2 is a temperature-time diagram of a conventional silicon carbide wafer thermal annealing process.
Detailed Description
In order to describe the technical contents, the achieved objects and effects of the present invention in detail, the following description will be made with reference to the embodiments in conjunction with the accompanying drawings.
As shown in FIG. 1, the rapid heating annealing device for the silicon carbide wafer comprises: the feeding and discharging chamber 7, the cooling chamber 1, the preheating chamber 2 and the heating chamber 3 are sequentially connected, the cooling chamber 1 is positioned on one side of the preheating chamber 2, the heating chamber 3 is positioned above the preheating chamber 2, the temperatures in the feeding and discharging chamber 7, the cooling chamber 1, the preheating chamber 2 and the heating chamber 3 are sequentially increased and kept constant, the temperature of the silicon carbide wafer can be rapidly increased after entering the heating chamber, the heating time is saved compared with the traditional single heating furnace, and the processing efficiency is improved.
The feeding and discharging chamber 7, the cooling chamber 1 and the preheating chamber 2 are respectively provided with a rotatable silicon wafer tray 4 for transferring silicon carbide wafers from one side of the chamber to the other side, wherein two mutually symmetrical silicon wafer grooves 41 are arranged on the silicon wafer tray 4, the bottom of the silicon wafer tray 4 is provided with a rotating shaft 42 for exchanging the positions of the two silicon wafer grooves 41 through rotation, thus feeding and discharging can be simultaneously realized through rotation, the production efficiency is greatly improved, and the number of the silicon wafer grooves 41 on each silicon wafer tray 4 can be increased according to actual needs.
Mechanical arms 5 are arranged among the feeding and discharging chamber 7, the cooling chamber 1 and the preheating chamber 2 and used for clamping silicon carbide chips from the silicon chip tray 4 to the silicon chip tray 4 of the adjacent chamber, and the mechanical arms 5 in the embodiment adopt conventional rotatable mechanical arms which can be purchased from the market, such as six-axis mechanical arms, and the design and improvement of the mechanical arms are not involved.
A lifting channel is arranged between the heating chamber 3 and the preheating chamber 2, and a lifting frame 6 which is positioned below a silicon wafer groove 41 of the preheating chamber 2, away from the cooling chamber 1, is also arranged on a silicon wafer tray 4, so as to enable the silicon carbide wafer to vertically move between the preheating chamber 2 and the heating chamber 3; in order to make the lifting frame 6 jack up the silicon carbide chip, the through hole 43 is arranged in the middle of the silicon chip groove 41, the size of the lifting frame is not larger than that of the through hole 43, or the silicon chip groove 41 can be in a structure separable from the silicon chip tray 4, and when the lifting frame is lifted up, the whole silicon chip groove 41 is jacked up to be lifted up together with the silicon carbide chip into the heating chamber 3.
In order to further improve the production efficiency, the silicon wafer trays 4 of the feeding and discharging chamber 7, the cooling chamber 1 and the preheating chamber 2 are all positioned on the same horizontal plane.
The workflow of the present embodiment is
Firstly, placing silicon carbide chips into a silicon chip groove 41 on the right side of a silicon chip tray 4 in a window on the right side of a feeding and discharging chamber 7, rotating the silicon chip groove 41 on the right side of the silicon chip tray 4 for storing the silicon carbide chips to the left side by rotating, grabbing the silicon carbide chips in the silicon chip groove 41 on the left side of the silicon chip tray 4 of the feeding and discharging chamber 7 by a mechanical arm 5 between the feeding and discharging chamber 7 and a cooling chamber 11, and placing the silicon carbide chips into the silicon chip groove 41 on the right side of the tray of the cooling chamber 1, so that the transfer of the silicon carbide chips from the feeding and discharging chamber 7 to the cooling chamber 1 is completed.
Similarly, after the silicon carbide chip is transferred into the silicon chip groove 41 on the right of the tray of the preheating chamber 2, the silicon chip tray 4 rotates the silicon chip groove 41 on the right for storing the silicon carbide chip to the left, the lifting frame 6 below the silicon chip tray 4 is quickly lifted, the silicon carbide chip in the silicon chip groove 41 is sent into the heating chamber 3, after being heated for a certain time, the lifting frame 6 is quickly lowered, the silicon carbide chip is put back into the left silicon chip groove 41, the silicon carbide chip heated to a specific temperature is transferred from the preheating chamber 2 to the cooling chamber 1 in the above manner, after being cooled for a certain time, the silicon carbide chip is continuously transferred to the feeding and discharging chamber 7, and finally the discharging is completed.
In summary, the rotatable silicon wafer tray 4 is arranged in each chamber, the mechanical arm 5 is arranged between the chambers, and the preheating chamber 2 and the cooling chamber 1 can simultaneously carry out feeding and discharging steps, so that the continuity of feeding and discharging is ensured.
Through cooling chamber 1, preheating chamber 2 and heating chamber 3 that independently set up for the preheating of carborundum piece, heating, cooling step can be gone on in succession through the transfer, have reduced traditional boiler and have warmed up and the time that the cooling needs to consume, a plurality of carborundum pieces can carry out heat, heating, cooling step respectively in same time, have realized going on in the multitasking simultaneously, very big improvement machining efficiency, make the heating annealing efficiency of carborundum piece obtain showing promotion.
The foregoing is only illustrative of the present invention and is not to be construed as limiting the scope of the invention, and all equivalent changes made by the description of the invention and the accompanying drawings, or direct or indirect application in the relevant art, are intended to be included within the scope of the invention.

Claims (5)

1.一种碳化硅片快速加热退火装置，其特征在于，包括：依次连接的冷却室(1)、预热室(2)、加热室(3)，所述冷却室(1)位于预热室(2)的一侧，所述加热室(3)位于预热室(2)的上方，所述冷却室(1)、预热室(2)内皆设置有可旋转的硅片托盘(4)以用于将碳化硅片从腔室的一侧转移到另一侧；所述冷却室(1)、预热室(2)之间设置有机械手臂(5)，以用于将碳化硅片从硅片托盘(4)上夹取到相邻腔室的硅片托盘(4)上；所述预热室(2)的硅片托盘(4)底部设置有升降架(6)，以用于使碳化硅片在预热室(2)和加热室(3)之间垂直移动；1. A silicon carbide wafer rapid heating annealing device, characterized in that it comprises: a cooling chamber (1), a preheating chamber (2), and a heating chamber (3) connected in sequence, wherein the cooling chamber (1) is located on one side of the preheating chamber (2), and the heating chamber (3) is located above the preheating chamber (2); a rotatable silicon wafer tray (4) is provided in each of the cooling chamber (1) and the preheating chamber (2) for transferring the silicon carbide wafer from one side of the chamber to the other side; a mechanical arm (5) is provided between the cooling chamber (1) and the preheating chamber (2) for clamping the silicon carbide wafer from the silicon wafer tray (4) to the silicon wafer tray (4) of the adjacent chamber; a lifting frame (6) is provided at the bottom of the silicon wafer tray (4) of the preheating chamber (2) for vertically moving the silicon carbide wafer between the preheating chamber (2) and the heating chamber (3); 所述硅片托盘(4)上设置有两个互相对称的硅片槽(41)，所述硅片托盘(4)底部设置有旋转轴(42)以用于通过旋转使两个硅片槽(41)的位置互换；The silicon wafer tray (4) is provided with two mutually symmetrical silicon wafer slots (41), and a rotating shaft (42) is provided at the bottom of the silicon wafer tray (4) for interchanging the positions of the two silicon wafer slots (41) by rotation; 所述硅片槽(41)中间开设有通孔(43)，以用于使升降架(6)穿过并顶起碳化硅片；A through hole (43) is provided in the middle of the silicon wafer groove (41) for allowing the lifting frame (6) to pass through and lift up the silicon carbide wafer; 所述升降架(6)位于预热室(2)的硅片托盘(4)远离冷却室(1)的硅片槽(41)下方。The lifting frame (6) is located below the silicon wafer tray (4) of the preheating chamber (2) and away from the silicon wafer slot (41) of the cooling chamber (1). 2.根据权利要求1所述的碳化硅片快速加热退火装置，其特征在于：还包括与冷却室(1)相连的进出料室(7)，所述进出料室(7)与冷却室(1)远离预热室(2)的一侧相连。2. The silicon carbide wafer rapid heating annealing device according to claim 1 is characterized in that it also includes an inlet and outlet chamber (7) connected to the cooling chamber (1), and the inlet and outlet chamber (7) is connected to the side of the cooling chamber (1) away from the preheating chamber (2). 3.根据权利要求2所述的碳化硅片快速加热退火装置，其特征在于：所述进出料室(7)内设置有可旋转的硅片托盘(4)以用于将碳化硅片从腔室的一侧转移到另一侧。3. The silicon carbide wafer rapid heating annealing device according to claim 2 is characterized in that a rotatable silicon wafer tray (4) is arranged in the loading and unloading chamber (7) for transferring the silicon carbide wafer from one side of the chamber to the other side. 4.根据权利要求3所述的碳化硅片快速加热退火装置，其特征在于：所述进出料室(7)、冷却室(1)之间设置有机械手臂(5)，以用于将碳化硅片从硅片托盘(4)上夹取到相邻腔室的硅片托盘(4)上。4. The silicon carbide wafer rapid heating annealing device according to claim 3 is characterized in that a robotic arm (5) is arranged between the loading and unloading chamber (7) and the cooling chamber (1) to clamp the silicon carbide wafer from the silicon wafer tray (4) to the silicon wafer tray (4) of the adjacent chamber. 5.根据权利要求4所述的碳化硅片快速加热退火装置，其特征在于：所述进出料室(7)、冷却室(1)、预热室(2)的硅片托盘(4)皆位于同一水平面。5. The silicon carbide wafer rapid heating annealing device according to claim 4 is characterized in that the silicon wafer trays (4) of the loading and unloading chamber (7), the cooling chamber (1), and the preheating chamber (2) are all located on the same horizontal plane.
CN201910317907.3A 2019-04-19 2019-04-19 A silicon carbide sheet rapid heating annealing device Active CN110047783B (en)

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Publication number Priority date Publication date Assignee Title
CN114197056B (en) * 2022-01-14 2024-07-09 浙江大学杭州国际科创中心 Annealing device and annealing method for semiconductor material
CN116798916B (en) * 2023-07-05 2024-07-26 扬州韩思半导体科技有限公司 A single-chip semiconductor wafer rapid annealing device

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GB433918A (en) * 1934-04-30 1935-08-22 Heraeus Vacuumschmelze Ag Improvements in and relating to annealing furnaces
CN2105769U (en) * 1991-08-15 1992-05-27 清华大学 Pull-push type multi-feeder automatic heater
US5607007A (en) * 1994-10-19 1997-03-04 Hitchiner Manufacturing Co., Inc. Directional solidification apparatus and method
CN101531906A (en) * 2009-04-23 2009-09-16 山西利华新科技开发有限公司 Method for electrical heating continuous coal pyrogenation coking and coking furnace thereof
KR20100108959A (en) * 2009-03-31 2010-10-08 주식회사 테라세미콘 Method for heat treatment of substrate in in-line heat treatment apparatus
CN204304943U (en) * 2015-01-07 2015-04-29 浙江东晶电子股份有限公司 The automatic annealing device of a kind of small-sized quartz-crystal resonator
KR101612425B1 (en) * 2015-11-19 2016-04-14 장인금속(주) Heat treatment apparatus having continuous vacuum chamber
CN106119954A (en) * 2016-08-31 2016-11-16 台州市能科技有限公司 A kind of single-crystal silicon carbide manufactures device
CN207115216U (en) * 2017-08-11 2018-03-16 浙江宇清热工科技股份有限公司 Continous way devitrified glass precision bending furnace
CN209675252U (en) * 2019-04-19 2019-11-22 湖南新锐微电子科技有限公司 A kind of silicon carbide plate flash annealing device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB433918A (en) * 1934-04-30 1935-08-22 Heraeus Vacuumschmelze Ag Improvements in and relating to annealing furnaces
CN2105769U (en) * 1991-08-15 1992-05-27 清华大学 Pull-push type multi-feeder automatic heater
US5607007A (en) * 1994-10-19 1997-03-04 Hitchiner Manufacturing Co., Inc. Directional solidification apparatus and method
KR20100108959A (en) * 2009-03-31 2010-10-08 주식회사 테라세미콘 Method for heat treatment of substrate in in-line heat treatment apparatus
CN101531906A (en) * 2009-04-23 2009-09-16 山西利华新科技开发有限公司 Method for electrical heating continuous coal pyrogenation coking and coking furnace thereof
CN204304943U (en) * 2015-01-07 2015-04-29 浙江东晶电子股份有限公司 The automatic annealing device of a kind of small-sized quartz-crystal resonator
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CN106119954A (en) * 2016-08-31 2016-11-16 台州市能科技有限公司 A kind of single-crystal silicon carbide manufactures device
CN207115216U (en) * 2017-08-11 2018-03-16 浙江宇清热工科技股份有限公司 Continous way devitrified glass precision bending furnace
CN209675252U (en) * 2019-04-19 2019-11-22 湖南新锐微电子科技有限公司 A kind of silicon carbide plate flash annealing device

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