CN220818586U - Heating module structure of TOPCon sintering furnace - Google Patents
Heating module structure of TOPCon sintering furnace Download PDFInfo
- Publication number
- CN220818586U CN220818586U CN202321602120.XU CN202321602120U CN220818586U CN 220818586 U CN220818586 U CN 220818586U CN 202321602120 U CN202321602120 U CN 202321602120U CN 220818586 U CN220818586 U CN 220818586U
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- lamp tube
- sintering furnace
- heating module
- heating
- topcon
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 117
- 238000005245 sintering Methods 0.000 title claims abstract description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 45
- 239000010703 silicon Substances 0.000 claims abstract description 45
- 239000000919 ceramic Substances 0.000 claims description 18
- 238000005452 bending Methods 0.000 claims description 11
- 238000009776 industrial production Methods 0.000 abstract description 4
- 230000003679 aging effect Effects 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 33
- 238000010586 diagram Methods 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model discloses a heating module structure of TOPCon sintering furnaces, which comprises a sintering furnace, wherein a heating module and a silicon wafer are arranged in the sintering furnace, and the heating module comprises an upper heating lamp tube and a lower heating lamp tube; the upper heating lamp tube and the lower heating lamp tube are arc-shaped; the silicon chip is positioned between the upper heating lamp tube and the lower heating lamp tube; the heating module structure of TOPCon sintering furnace provided by the utility model has the advantages that: firstly, a heating module designed by an arc-shaped lamp tube is characterized in that the whole area of a silicon wafer is heated uniformly, and a temperature field is stable, so that the electrical property and aging property of a battery are greatly improved and promoted; secondly, the heating module is designed to be detachable for maintenance as a result, so that the industrial production is facilitated.
Description
Technical Field
The utility model relates to the field of crystalline silicon battery manufacturing, in particular to a heating module structure of a TOPCon sintering furnace.
Background
The conventional TOPCon sintering furnace is mainly divided into a traditional furnace belt type sintering furnace and a ceramic roller way type sintering furnace, and the traditional furnace belt type sintering furnace takes away a large amount of heat due to circulation in and out, so that the energy consumption is 60% higher than that of the ceramic roller way type sintering furnace. At present TOPCon battery sintering generally adopts a ceramic roller-type sintering furnace, because the size of a silicon wafer is continuously optimized and becomes larger, the silicon wafer becomes thinner, and the silicon wafer on a roller of the sintering furnace can slightly bend downwards, but at present, a common sintering heating module is designed to be parallel to the silicon wafer, so that the whole area of the silicon wafer is heated unevenly. The non-uniform heating inevitably leads to welding performance, current impedance and the like of the metal slurry on the surface of the silicon wafer. Therefore, the problem of unbalanced heating of the whole area of the silicon wafer caused by dead weight bending is necessarily solved.
At present, a ceramic roller sintering furnace with lower energy consumption is generally adopted in the industry, and mainly a roller is adopted in a cavity to drive a battery piece to move forwards, and the roller is continuously kept in a high-temperature thermal field atmosphere, so that heat energy loss caused by cold-heat exchange does not occur. In the actual industrial production process, the silicon wafer can bend downwards due to dead weight, so that the heated temperatures of the metal slurry in the center range and the edge range of the silicon wafer are different, namely, the welding performance and the current impedance of the silicon wafer are inconsistent, and the electric performance and the aging performance of a battery are reduced. The heating module structure design of the main stream at present is mainly a heating module structure design proposed by a patent CN 212023768U, as shown in fig. 1, the structure has the advantages that the rolling shafts below the battery pieces are in through connection, so that the heat storage effect is realized below the battery pieces, the heat field loss is small, and the relative independent control of the upper temperature and the lower temperature of the battery pieces is ensured. However, the design of the lamp tube in the patent structure is parallel to the surface of the silicon wafer, which inevitably leads to the problem of unbalanced heating of the whole area of the silicon wafer
In order to solve the problem of unbalanced upper and lower temperature fields of the existing sintering furnace heating module design, the patent proposes a TOPCon heating module structure of a sintering furnace to solve the problem.
Disclosure of utility model
The utility model aims to provide a heating module structure of a TOPCon sintering furnace, which aims to solve the defects in the prior art.
In order to achieve the above object, the present utility model provides the following technical solutions:
The heating module structure of TOPCon sintering furnace comprises a sintering furnace, wherein a heating module and a silicon wafer are arranged in the sintering furnace, and the heating module comprises an upper heating lamp tube and a lower heating lamp tube;
The upper heating lamp tube and the lower heating lamp tube are arc-shaped;
The silicon chip is positioned between the upper heating lamp tube and the lower heating lamp tube.
Further, the bending radius R1300mm-R3500mm of the upper heating lamp tube, and the distance between the lowest point of the lamp tube and the silicon wafer is kept consistent with the distance between the lowest point of the lamp tube and the horizontal heating module.
Further, the bending radius R1300mm-R3500mm of the lower heating lamp tube, and the distance between the lowest point of the lamp tube and the silicon wafer is kept consistent with the distance between the lower heating lamp tube and the horizontal heating module.
Further, a frame structure is arranged in the sintering furnace, and the heating module is arranged in the frame structure.
Further, the frame structure comprises an upper frame and a lower frame, wherein the upper heating lamp tube is arranged in the upper frame, and the lower heating lamp tube is arranged in the lower frame.
Further, the upper frame and the lower frame are U-shaped, and the opening ends of the upper frame and the lower frame are symmetrically arranged.
Further, the sintering furnace is provided with supporting structures, and the number of the supporting structures is two.
Further, the support structure is a ceramic roller, and the ceramic roller penetrates through the sintering furnace and extends to the inside of the sintering furnace.
Further, the ceramic roller is provided with a lap joint part, and the silicon wafer is positioned above the lap joint part.
In the technical scheme, the heating module structure of the TOPCon sintering furnace provided by the utility model (1) improves the structural design of a horizontal heating lamp tube commonly adopted in the original industry; (2) The heating module structure of TOPCon sintering furnace provided by the utility model has the advantages that: firstly, a heating module designed by an arc-shaped lamp tube is characterized in that the whole area of a silicon wafer is heated uniformly, and a temperature field is stable, so that the electrical property and aging property of a battery are greatly improved and promoted; secondly, the heating module is designed to be detachable for maintenance as a result, so that the industrial production is facilitated.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings required for the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments described in the present utility model, and other drawings may be obtained according to these drawings for a person having ordinary skill in the art.
Fig. 1 is a schematic structural design diagram of a heating module provided in an embodiment of a heating module structure of TOPCon sintering furnace according to the present utility model.
Fig. 2 is a schematic diagram of a heating module of the file according to an embodiment of a heating module structure of TOPCon sintering furnace of the present utility model.
Reference numerals illustrate:
1 an upper frame, 2 an upper heating lamp tube, 3a ceramic roller, 4 a lower heating lamp tube, 5 a lower frame, 6 a silicon wafer, 7 a sintering furnace and 8a lap joint part.
Detailed Description
In order to make the technical scheme of the present utility model better understood by those skilled in the art, the present utility model will be further described in detail with reference to the accompanying drawings.
As shown in fig. 1-2, the heating module structure of TOPCon sintering furnace provided by the embodiment of the utility model comprises a sintering furnace 7, wherein a heating module and a silicon wafer 6 are arranged in the sintering furnace 7, and the heating module comprises an upper heating lamp tube 2 and a lower heating lamp tube 4;
The upper heating lamp tube 2 and the lower heating lamp tube 4 are arc-shaped;
the silicon wafer 6 is positioned between the upper heating lamp tube 2 and the lower heating lamp tube 4.
The heating module structure of TOPCon sintering furnace provided by the invention has the advantages that: firstly, a heating module designed by an arc-shaped lamp tube is characterized in that the whole area of a silicon wafer is heated uniformly, and a temperature field is stable, so that the electrical property and aging property of a battery are greatly improved and promoted; secondly, the heating module is designed to be detachable for maintenance as a result, so that the industrial production is facilitated.
In a further embodiment provided by the utility model, the bending radius R1300mm-R3500mm of the upper heating lamp tube 2 is kept at a distance consistent with the distance between the lowest point of the lamp tube and the silicon wafer 6 and the horizontal heating module.
In yet another embodiment provided by the utility model, the bending radius R1300mm-R3500mm of the lower heating lamp tube 4, the distance between the lowest point of the lamp tube and the silicon wafer 6 is kept consistent with the distance between the horizontal heating modules.
In yet another embodiment provided by the utility model, the sintering furnace 7 is internally provided with a frame structure, and the heating module is arranged inside the frame structure.
In still another embodiment, the frame structure includes an upper frame 1 and a lower frame 5, the upper heating lamps 2 are disposed inside the upper frame 1, and the lower heating lamps 4 are disposed inside the lower frame 5.
In still another embodiment provided by the present utility model, the upper frame 1 and the lower frame 5 are U-shaped, and the open ends of the upper frame 1 and the lower frame 5 are symmetrically disposed.
In a further embodiment provided by the utility model, the sintering furnace 7 is provided with two support structures for supporting the silicon wafers 6.
In yet another embodiment of the present utility model, the support structure is a ceramic roller 3, the ceramic roller 3 penetrates through the sintering furnace 7 and extends to the inside of the sintering furnace 7, and the driving end of the ceramic roller 3 is located at the outside of the sintering furnace.
In yet another embodiment of the present utility model, the ceramic roller 3 has a bridge 8, the silicon wafer 6 is positioned above the bridge 8, and the silicon wafer 6 is positioned directly above the bridge 8.
In yet another embodiment of the present utility model, as shown in fig. 2, a heating module is provided that is of an up-down arc design. An arc heating lamp tube is adopted above the silicon chip, and the bending radius is the same as that of the arc heating lamp tube
R1300mm-R3500mm, and the distance between the lowest point of the lamp tube and the silicon wafer is kept consistent with the distance between the lowest point of the lamp tube and the horizontal heating module. And the arc heating lamp tube is adopted below the silicon chip, the bending radius R1300mm-R3500mm, and the distance between the lowest point of the lamp tube and the silicon chip is kept consistent with the distance between the lowest point of the lamp tube and the horizontal heating module.
Example 1
The heating module structure of TOPCon sintering furnace comprises a sintering furnace 7, wherein a heating module and a silicon wafer 6 are arranged in the sintering furnace 7, and the heating module comprises an upper heating lamp tube 2 and a lower heating lamp tube 4;
The upper heating lamp tube 2 and the lower heating lamp tube 4 are arc-shaped;
the silicon wafer 6 is positioned between the upper heating lamp tube 2 and the lower heating lamp tube 4.
Example 2
The embodiment is further defined on the basis of embodiment 1, the bending radius R1300mm-R3500mm of the upper heating lamp tube 2, the distance between the lowest point of the lamp tube and the silicon wafer 6 is kept at a distance consistent with that of the horizontal heating module, the bending radius R1300mm-R3500mm of the lower heating lamp tube 4, the distance between the lowest point of the lamp tube and the silicon wafer 6 is kept at a distance consistent with that of the horizontal heating module, the inside of the sintering furnace 7 is provided with a frame structure, the heating module is arranged inside the frame structure, the frame structure comprises an upper frame 1 and a lower frame 5, the upper heating lamp tube 2 is arranged inside the upper frame 1, the lower heating lamp tube 4 is arranged inside the lower frame 5, the upper frame 1 and the lower frame 5 are in a U shape, the opening ends of the upper frame 1 and the lower frame 5 are symmetrically arranged, the sintering furnace 7 is provided with supporting structures, the number of the supporting structures is two, the supporting structures are used for supporting the silicon wafer 6, the ceramic roller 3 penetrates the sintering furnace 7 and extends to the inside of the sintering furnace 7, the ceramic roller 3 is positioned outside the sintering furnace, the ceramic roller 3 is provided with a lap joint 8, the 6 is positioned above the upper end 8, and the silicon wafer 6 is directly placed above the lap joint 8.
While certain exemplary embodiments of the present utility model have been described above by way of illustration only, it will be apparent to those of ordinary skill in the art that modifications may be made to the described embodiments in various different ways without departing from the spirit and scope of the utility model. Accordingly, the drawings and description are to be regarded as illustrative in nature and not as restrictive of the scope of the utility model, which is defined by the appended claims.
Claims (9)
1. The heating module structure of TOPCon sintering furnace is characterized by comprising a sintering furnace (7), wherein a heating module and a silicon wafer (6) are arranged in the sintering furnace (7), and the heating module comprises an upper heating lamp tube (2) and a lower heating lamp tube (4);
the upper heating lamp tube (2) and the lower heating lamp tube (4) are arc-shaped;
the silicon wafer (6) is positioned between the upper heating lamp tube (2) and the lower heating lamp tube (4).
2. A heating module structure of TOPCon sintering furnace according to claim 1, characterized in that the bending radius R1300mm-R3500mm of the upper heating lamp tube (2) is kept at a distance consistent with the horizontal heating module by the distance of the lowest point of the lamp tube and the silicon wafer (6).
3. A heating module structure of TOPCon sintering furnace according to claim 1, characterized in that the bending radius R1300mm-R3500mm of the lower heating lamp tube (4) is kept at a distance consistent with the horizontal heating module by the distance of the lowest point of the lamp tube and the silicon wafer (6).
4. A heating module structure of TOPCon sintering furnace according to claim 1, characterized in that the sintering furnace (7) is internally provided with a frame structure, the heating module being arranged inside the frame structure.
5. The heating module structure of TOPCon sintering furnace according to claim 4, wherein the frame structure includes an upper frame (1) and a lower frame (5), the upper heating lamp tube (2) is disposed inside the upper frame (1), and the lower heating lamp tube (4) is disposed inside the lower frame (5).
6. The heating module structure of TOPCon sintering furnace according to claim 5, wherein the upper frame (1) and the lower frame (5) are U-shaped, and the open ends of the upper frame (1) and the lower frame (5) are symmetrically arranged.
7. A heating module structure of a TOPCon sintering furnace according to claim 6, characterised in that the sintering furnace (7) is provided with a number of support structures, two.
8. A heating module structure of a TOPCon sintering furnace according to claim 7, characterised in that the support structure is a ceramic roller (3), the ceramic roller (3) extending through the sintering furnace (7) and into the interior of the sintering furnace (7).
9. A heating module structure of TOPCon sintering furnace according to claim 8, wherein the ceramic roller (3) has a lap joint (8), and the silicon wafer (6) is located above the lap joint (8).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202321602120.XU CN220818586U (en) | 2023-06-25 | 2023-06-25 | Heating module structure of TOPCon sintering furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN202321602120.XU CN220818586U (en) | 2023-06-25 | 2023-06-25 | Heating module structure of TOPCon sintering furnace |
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Publication Number | Publication Date |
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CN220818586U true CN220818586U (en) | 2024-04-19 |
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CN202321602120.XU Active CN220818586U (en) | 2023-06-25 | 2023-06-25 | Heating module structure of TOPCon sintering furnace |
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2023
- 2023-06-25 CN CN202321602120.XU patent/CN220818586U/en active Active
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