CN220246329U - Heat shield and semiconductor processing equipment - Google Patents
Heat shield and semiconductor processing equipment Download PDFInfo
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- CN220246329U CN220246329U CN202321869307.6U CN202321869307U CN220246329U CN 220246329 U CN220246329 U CN 220246329U CN 202321869307 U CN202321869307 U CN 202321869307U CN 220246329 U CN220246329 U CN 220246329U
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- inner container
- liner
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000012545 processing Methods 0.000 title description 5
- 238000009413 insulation Methods 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 16
- 230000008569 process Effects 0.000 claims abstract description 16
- 230000007423 decrease Effects 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 5
- 230000003247 decreasing effect Effects 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 32
- 239000012071 phase Substances 0.000 abstract description 12
- 239000007790 solid phase Substances 0.000 abstract description 8
- 230000005855 radiation Effects 0.000 abstract description 6
- 230000007246 mechanism Effects 0.000 abstract description 4
- 230000009022 nonlinear effect Effects 0.000 abstract description 4
- 239000007789 gas Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- 230000000149 penetrating effect Effects 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 238000009434 installation Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000004321 preservation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 241000282414 Homo sapiens Species 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000002231 Czochralski process Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- Thermal Insulation (AREA)
Abstract
The utility model provides a heat shield and semiconductor process equipment, wherein the heat shield comprises an inner container, an outer container and a heat insulation filling part, the outer container is sleeved outside the inner container, a heat insulation cavity is formed between the inner container and the outer container, the heat insulation filling part is filled in the heat insulation cavity, and a plurality of temperature control holes are formed in the side wall of the inner container. In the heat shield provided by the utility model, the inner side wall of the inner container is internally provided with the plurality of temperature control holes, so that when heat is transmitted through the inner container, a heat transmission path alternates between a solid phase and a gas phase, and the heat transmission mode in the side wall of the inner container is divided into two modes of heat transmission in the solid phase by bypassing the control Wen Kongdong and gas phase heat transmission through the air holes, wherein the gas phase heat transmission through the control Wen Kongdong comprises the conduction, convection and radiation heat transmission of gas, and therefore, various heat transmission mechanisms jointly play roles in the heat transmission process of the side wall of the inner container, thereby causing the heat transmission of the inner container to take a nonlinear action, effectively improving the heat insulation performance of the heat shield and reducing the power consumption of semiconductor process equipment.
Description
Technical Field
The utility model relates to the field of semiconductor process equipment, in particular to a heat shield and semiconductor process equipment.
Background
With the development of modern industry, the global energy crisis and the atmospheric pollution problem are increasingly prominent, the traditional fuel energy is being reduced every day, the harm to the environment is increasingly prominent, the renewable energy is thrown to the world, the renewable energy is hoped to change the energy structure of human beings, and the long-term sustainable development is maintained. The abundant solar radiation energy is an important renewable energy source, and is inexhaustible, pollution-free, low-cost and freely available for human beings. Solar cells have therefore become a focus of attention by taking advantage of their ability to convert solar radiation energy into electrical energy.
Along with the continuous increase of the types of solar cells, the increasingly wide application range and the gradual expansion of market scale, the silicon-based cells are a main market due to the stable conversion efficiency. The monocrystalline silicon wafer is used as an important material for manufacturing the silicon-based battery, and the cost of the monocrystalline silicon wafer affects the profit margin of the whole industry. Therefore, it is increasingly important to reduce the manufacturing cost of monocrystalline silicon pieces.
The production of monocrystalline silicon is mainly realized by a Czochralski process, the monocrystalline growth equipment mainly comprises a furnace body, an electric appliance part, a heat system, a water cooling system, a vacuum system, an argon gas supply device and the like, wherein the heat system mainly comprises a heat shield (the heat shield comprises parts such as an outer liner, an inner liner, an intermediate heat preservation filling material and the like), a water cooling heat shield, various graphite parts, a heater, a heat preservation material and the like, and the reduction of the cost of the heat system is one of necessary ways for reducing the overall cost and improving the profit margin of products.
The current solar-grade czochralski silicon production cost structure comprises electric power cost, other raw materials and auxiliary materials, labor cost and the like, wherein the electric power cost is inferior to the electric power cost of the other raw materials and auxiliary materials. Because the market of monocrystalline silicon is continuously amplified to cause the shortage of raw and auxiliary materials and the shortage of professionals, reducing the power consumption in the monocrystalline growth process has important significance for further reducing the manufacturing cost of the silicon wafer and promoting the sustainable development of solar energy and enterprises.
In the current single crystal growth equipment, the heat insulation performance of the heat shield is poor, so that the water cooling shield takes away a large amount of heat released by the molten silicon liquid level below the heat shield, and a large amount of power consumption is wasted.
Therefore, how to improve the heat insulation performance of the heat shield so as to reduce the power consumption of the semiconductor process equipment is a technical problem to be solved in the field.
Disclosure of Invention
The utility model aims to provide a heat shield and semiconductor process equipment, wherein the heat shield has good heat insulation performance and can effectively reduce the power consumption of the semiconductor process equipment.
In order to achieve the above object, as one aspect of the present utility model, there is provided a heat shield, the heat shield includes a liner, an outer liner, and a heat insulation filling portion, the outer liner is sleeved outside the liner, a heat insulation cavity is formed between the liner and the outer liner, the heat insulation filling portion is filled in the heat insulation cavity, and a plurality of temperature control holes are formed inside a sidewall of the liner.
As an optional implementation mode of the utility model, the volume of the temperature control hole accounts for 30% -40% of the volume of the side wall of the liner.
As an alternative embodiment of the utility model, the pore size of the control Wen Kongdong is between 100 μm and 1000 μm.
As an alternative embodiment of the utility model, the thickness of the side wall of the liner is 5mm-20mm.
As an alternative embodiment of the present utility model, the liner includes a first cylinder section and a first tapered section connected to the bottom of the first cylinder section, and the diameter of the first tapered section gradually decreases from top to bottom in the vertical direction.
As an alternative embodiment of the present utility model, the inner container is made of porous ceramic by one-step molding.
As an alternative embodiment of the utility model, the height of the first straight cylinder section along the axis direction of the inner container is 290mm-310mm, and the height of the first conical section along the axis direction of the inner container is 390mm-410mm.
As an alternative embodiment of the present utility model, the height of the first straight section along the axial direction of the liner is 300mm, and the height of the first tapered section along the axial direction of the liner is 400mm.
As an optional implementation mode of the utility model, the liner further comprises a furling section, the furling section is connected to the bottom of the first conical section, the diameter of the furling section gradually decreases from top to bottom along the vertical direction, and an included angle between a bus of the furling section and the radial direction is smaller than an included angle between a bus of the first straight section and the radial direction.
As an alternative embodiment of the utility model, the angle between the generatrix of the first straight cylinder section and the radial direction is 30 ° -60 °.
As an alternative embodiment of the present utility model, the outer bladder includes a second straight cylinder section and a second conical section connected to the bottom of the second straight cylinder section, and the diameter of the second conical section gradually decreases from top to bottom along the vertical direction.
As an optional embodiment of the present utility model, a first annular protrusion surrounding the heat shield axis is formed at the bottom of the folding section, a second annular protrusion surrounding the heat shield axis is formed on the inner side wall of the bottom of the second conical section, the first annular protrusion is in contact with the inner side wall of the bottom of the second conical section, and the first annular protrusion is sleeved on the outer side of the second annular protrusion, so as to fix the liner in the outer liner.
As an optional implementation manner of the utility model, the heat shield further comprises an upper heat-insulating ring and an annular cover plate, an annular installation protruding edge extending towards the outer side of the outer liner is formed at the top of the outer liner, the upper heat-insulating ring is arranged between the annular cover plate and the annular installation protruding edge, and the annular cover plate is fixedly connected with the annular installation protruding edge, so that the upper heat-insulating ring limits the heat-insulating filling part in the heat-insulating cavity.
As an alternative embodiment of the present utility model, a plurality of first mounting holes penetrating the annular mounting flange along the radial direction of the heat shield are formed in the annular mounting flange, a plurality of second mounting holes penetrating the upper heat-insulating ring along the radial direction of the heat shield are formed in the upper heat-insulating ring, a plurality of third mounting holes penetrating the annular cover plate along the radial direction of the heat shield are formed in the annular cover plate, and the annular cover plate and the annular mounting flange are fixedly connected through fasteners penetrating the first mounting holes, the second mounting holes and the third mounting holes in a one-to-one correspondence.
As an alternative embodiment of the present utility model, the fastener is a bolt.
As an alternative embodiment of the present utility model, the first mounting hole on the annular mounting flange is a countersunk hole.
As an optional embodiment of the present utility model, the heat shield further includes a tray, and the tray is disposed at the bottom of the outer container, and is used for lifting and supporting the outer container, the inner container, and the heat insulation filling portion.
As a second aspect of the present utility model, there is provided a semiconductor process apparatus comprising a furnace body, a heat shield disposed in the furnace body, and a water-cooling shield disposed in the heat shield, the heat shield being the aforementioned heat shield.
As an optional implementation mode of the utility model, the heat shield further comprises a tray, wherein the tray is arranged at the bottom of the outer container and is used for supporting the outer container, the inner container and the heat insulation filling part in a lifting mode, and the tray is fixedly connected with the furnace body.
In the heat shield and the semiconductor process equipment provided by the utility model, the side wall of the inner container is internally provided with the plurality of temperature control holes, so that when heat is transmitted through the inner container, a heat transmission path alternates between a solid phase and a gas phase, and the heat is transmitted in the side wall of the inner container in a mode of bypassing the control Wen Kongdong to transmit heat in the solid phase and transmitting heat in the gas phase through the air holes, wherein the gas phase transmitting heat transmitted through the control Wen Kongdong comprises the transmission, convection heat transmission and radiation heat transmission of the gas, and therefore, various heat transmission mechanisms jointly play roles in the heat transmission process of the side wall of the inner container, thereby causing the heat transmission of the inner container to take a nonlinear action, effectively improving the heat insulation performance of the inner container, further improving the heat insulation performance of the heat shield and effectively reducing the power consumption of the semiconductor process equipment.
Drawings
The accompanying drawings are included to provide a further understanding of the utility model, and are incorporated in and constitute a part of this specification, illustrate the utility model and together with the description serve to explain, without limitation, the utility model. In the drawings:
FIG. 1 is a schematic view of a heat shield according to an embodiment of the present utility model;
FIG. 2 is an enlarged schematic view of a portion of the heat shield of FIG. 1 at area A;
FIG. 3 is a schematic view of the heat shield of FIG. 1 in partial enlarged form in region B;
fig. 4 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present utility model.
Reference numerals illustrate:
100: liner 101: control Wen Kongdong
110: first barrel section 120: a first conical section
130: the gathering section 131: a first annular protrusion
200: outer bladder 201: first mounting hole
210: second straight barrel section 220: second conical section
221: second annular projection 300: thermal insulation filling part
400: annular cover plate 500: upper heat-insulating ring
510: second mounting hole 600: water-cooling screen
Detailed Description
The following describes specific embodiments of the present utility model in detail with reference to the drawings. It should be understood that the detailed description and specific examples, while indicating and illustrating the utility model, are not intended to limit the utility model.
In order to solve the above-mentioned technical problem, as an aspect of the present utility model, a heat shield is provided, as shown in fig. 1, the heat shield includes a liner 100, an outer liner 200, and a heat insulation filling portion 300 (i.e. a heat insulation felt), the outer liner 200 is sleeved outside the liner 100, a heat insulation cavity is formed between the liner 100 and the outer liner 200, the heat insulation filling portion 300 is filled in the heat insulation cavity, as shown in fig. 2, a plurality of temperature control holes 101 are provided in the side wall of the liner 100.
In the heat shield provided by the utility model, the side wall of the liner 100 is internally provided with the plurality of temperature control holes 101, so that when heat is transmitted through the liner 100, heat transmission paths alternate between solid phase and gas phase, and the heat transmission mode in the side wall of the liner 100 is divided into two modes of heat transmission in the solid phase by bypassing the control Wen Kongdong 101 and gas phase heat transmission through the air holes, wherein the gas phase heat transmission through the temperature control holes 101 comprises the conduction, convection and radiation of gas, so that various heat transmission mechanisms jointly play roles in the heat transmission process of the side wall of the liner 100, thereby causing the heat transmission of the liner 100 to take a nonlinear action, effectively improving the heat insulation performance of the liner 100, further improving the heat insulation performance of the heat shield and effectively reducing the power consumption of semiconductor process equipment.
In addition, the utility model only improves the internal structure of the liner 100, the external dimension of the liner 100 can be consistent with the structure of the existing liner, the liner can be directly used for replacing the existing liner, and the adaptability of the components is improved.
As an alternative embodiment of the present utility model, the volume of the temperature-controlling hole 101 is 30% -40% of the volume of the sidewall of the liner 100.
As an alternative embodiment of the present utility model, the pore diameter of the temperature-controlled pore 101 is between 100 μm and 1000 μm.
As an alternative embodiment of the present utility model, the liner 100 includes a first cylindrical section 110 and a first tapered section 120 connected to the bottom of the first cylindrical section 110, and the diameter of the first tapered section 120 is gradually reduced from top to bottom in the vertical direction.
As a preferred embodiment of the present utility model, the inner container 100 is formed by one-step molding of porous ceramic.
In the embodiment of the utility model, the liner 100 is formed by one-step molding of porous ceramic, so that the processing difficulty is reduced, the processing period is shortened, and a gap is not left between the first straight barrel section 110 and the first conical section 120 to cause heat to leak in through the gap, so that the heat insulation performance of the heat shield is further ensured.
In addition, the conventional heat shield structure is usually provided with a graphite liner or a quartz liner, wherein the graphite liner is easy to crack under repeated high-temperature thermal shock, so that parts are easy to damage, the safety is poor, the oxidation resistance and corrosion resistance are weak, and the service life is low; the quartz liner has high heat conductivity and poor heat preservation performance, and is also easy to damage parts due to external force, so that the safety is poor; in addition, the two materials of the liner have the problems of high raw material cost and high manufacturing cost.
In the embodiment of the utility model, the material of the liner 100 is porous ceramic, the porous ceramic material is prepared by taking high-quality raw materials such as corundum sand, silicon carbide, cordierite and the like as main materials through molding and a special high-temperature sintering process, has the advantages of high temperature resistance, high pressure resistance, acid resistance, alkali resistance and organic medium corrosion resistance, and has the characteristics of good biological inertia, controllable pore structure, high opening porosity, long service life, good product regeneration performance, high porosity, small volume density, low thermal conductivity and the like, and the porous ceramic material can effectively block heat transfer.
As a preferred embodiment of the present utility model, the sidewall of the liner 100 has a thickness of 5mm to 20mm.
In the embodiment of the utility model, the temperature control hole 101 in the liner 100 can effectively improve the heat insulation capability, so that compared with the traditional liner, the liner 100 in the heat shield provided by the utility model can further reduce the thickness, vacate a larger accommodating space for the heat insulation cavity, and further increase the thickness of the heat insulation filling part 300 in the heat insulation cavity, thereby further enhancing the heat insulation effect of the heat shield.
As an alternative embodiment of the present utility model, the height of the first straight section 110 along the axial direction of the liner 100 is 290mm-310mm, and the height of the first tapered section 120 along the axial direction of the liner 100 is 390mm-410mm.
As an alternative embodiment of the present utility model, the height of the first straight section 110 along the axial direction of the liner 100 is 300mm, and the height of the first tapered section 120 along the axial direction of the liner 100 is 400mm.
As an optional embodiment of the present utility model, the liner 100 further includes a gathering section 130, the gathering section 130 is connected to the bottom of the first conical section 120, the diameter of the gathering section 130 gradually decreases from top to bottom along the vertical direction, and an included angle between a bus of the gathering section 130 and the radial direction is smaller than an included angle between a bus of the first cylindrical section 110 and the radial direction.
As an alternative embodiment of the present utility model, the included angle between the generatrix of the first straight cylinder section 110 and the radial direction is 30 ° -60 °.
As an alternative embodiment of the present utility model, the outer bladder 200 includes a second straight cylindrical section 210 and a second tapered section 220 connected to the bottom of the second straight cylindrical section 210, and the diameter of the second tapered section 220 gradually decreases from top to bottom in the vertical direction.
As an alternative embodiment of the present utility model, as shown in fig. 3, a first annular protrusion 131 surrounding the heat shield axis is formed at the bottom of the gathering section 130, a second annular protrusion 221 surrounding the heat shield axis is formed on the inner sidewall of the bottom of the second conical section 220, the first annular protrusion 131 is in contact with the inner sidewall of the bottom of the second conical section 220, and the first annular protrusion 131 is sleeved on the outer side of the second annular protrusion 221 to fix the liner 100 in the outer liner 200. That is, in the embodiment of the present utility model, the relative positions of the inner container 100 and the outer container 200 are maintained by the self weight of the inner container 100 and the limiting action between the first and second annular protrusions 131 and 221.
As an alternative embodiment of the present utility model, as shown in fig. 1, the heat shield further includes an upper insulation ring 500 and an annular cover plate 400, the top of the outer container 200 is formed with an annular installation ledge extending toward the outside of the outer container 200, the upper insulation ring 500 is disposed between the annular cover plate 400 and the annular installation ledge, and the annular cover plate 400 is fixedly connected with the annular installation ledge, so that the upper insulation ring 500 defines the insulation filling part 300 in the insulation chamber.
As an alternative embodiment of the present utility model, as shown in fig. 1, a plurality of first mounting holes 201 penetrating the annular mounting flange in the radial direction of the heat shield are formed in the annular mounting flange, a plurality of second mounting holes 510 penetrating the upper heat-insulating ring 500 in the radial direction of the heat shield are formed in the upper heat-insulating ring 500, a plurality of third mounting holes penetrating the annular cover 400 in the radial direction of the heat shield are formed in the annular cover 400, and the annular cover 400 and the annular mounting flange are fixedly connected by fasteners penetrating the first mounting holes 201, the second mounting holes 510 and the third mounting holes in a one-to-one correspondence.
As an alternative embodiment of the present utility model, the fastener is a bolt.
As an alternative embodiment of the present utility model, as shown in fig. 1, the first mounting hole 201 on the annular mounting flange is a countersunk hole.
As an alternative embodiment of the present utility model, the heat shield further includes a tray (not shown) disposed at the bottom of the outer container 200, for lifting and supporting the outer container 200, the inner container 100, and the heat insulation packing 300.
As a second aspect of the present utility model, there is provided a semiconductor process apparatus, as shown in fig. 4, comprising a furnace body (not shown), a heat shield and a water-cooling shield 600, wherein the heat shield is disposed in the furnace body, the water-cooling shield 600 is disposed in the heat shield, and the heat shield is provided by an embodiment of the present utility model.
In the heat shield provided by the utility model, the side wall of the liner 100 is internally provided with the plurality of temperature control holes 101, so that when heat is transmitted through the liner 100, heat transmission paths alternate between solid phase and gas phase, and the heat transmission mode in the side wall of the liner 100 is divided into two modes of heat transmission in the solid phase by bypassing the control Wen Kongdong 101 and gas phase heat transmission through the air holes, wherein the gas phase heat transmission through the temperature control holes 101 comprises the conduction, convection and radiation of gas, so that various heat transmission mechanisms jointly play roles in the heat transmission process of the side wall of the liner 100, thereby causing the heat transmission of the liner 100 to take a nonlinear action, effectively improving the heat insulation performance of the liner 100, further improving the heat insulation performance of the heat shield and effectively reducing the power consumption of semiconductor process equipment.
As an optional embodiment of the present utility model, the heat shield further includes a tray, where the tray is disposed at the bottom of the outer liner 200 and is used for lifting and supporting the outer liner 200, the inner liner 100, and the heat insulation filling portion 300, and the tray is fixedly connected with the furnace body.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present utility model, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the utility model, and are also considered to be within the scope of the utility model.
Claims (10)
1. The heat shield comprises an inner container, an outer container and a heat insulation filling part, wherein the outer container is sleeved outside the inner container, a heat insulation cavity is formed between the inner container and the outer container, and the heat insulation filling part is filled in the heat insulation cavity.
2. The heat shield of claim 1, wherein the volume of the temperature control hole is 30% -40% of the volume of the side wall of the liner.
3. A heat shield according to claim 1, wherein the aperture of the control Wen Kongdong is between 100 and 1000 μm.
4. The heat shield of claim 1, wherein the sidewall thickness of the liner is 5mm-20mm.
5. The heat shield of any one of claims 1 to 4, wherein the liner comprises a first barrel section and a first tapered section connected to a bottom of the first barrel section, the first tapered section having a diameter that gradually decreases from top to bottom in a vertical direction.
6. The heat shield of claim 5, wherein the inner bladder is formed in one piece from porous ceramic.
7. The heat shield of claim 5, wherein the liner further comprises a gathering section, the gathering section is connected to the bottom of the first conical section, the diameter of the gathering section gradually decreases from top to bottom along the vertical direction, and an included angle between a generatrix of the gathering section and the radial direction is smaller than an included angle between the generatrix of the first cylindrical section and the radial direction.
8. The heat shield of claim 7, wherein an angle between a generatrix of the first barrel section and a radial direction is 30 ° -60 °.
9. The heat shield of claim 7, wherein the outer bladder comprises a second straight barrel section and a second conical section connected to the bottom of the second straight barrel section, the diameter of the second conical section gradually decreasing from top to bottom in the vertical direction;
the bottom of the folding section is provided with a first annular bulge surrounding the heat shield axis, the inner side wall of the bottom of the second conical section is provided with a second annular bulge surrounding the heat shield axis, the first annular bulge is in contact with the inner side wall of the bottom of the second conical section, and the first annular bulge is sleeved on the outer side of the second annular bulge so as to fix the inner container in the outer container.
10. A semiconductor process apparatus comprising a furnace body, a heat shield disposed in the furnace body, and a water-cooled shield disposed in the heat shield, wherein the heat shield is the heat shield of any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321869307.6U CN220246329U (en) | 2023-07-17 | 2023-07-17 | Heat shield and semiconductor processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321869307.6U CN220246329U (en) | 2023-07-17 | 2023-07-17 | Heat shield and semiconductor processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220246329U true CN220246329U (en) | 2023-12-26 |
Family
ID=89230991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321869307.6U Active CN220246329U (en) | 2023-07-17 | 2023-07-17 | Heat shield and semiconductor processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220246329U (en) |
-
2023
- 2023-07-17 CN CN202321869307.6U patent/CN220246329U/en active Active
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