CN220132408U - Liquid phase method silicon carbide crystal growing device - Google Patents

Abstract

The utility model provides a liquid phase method silicon carbide crystal growth device, which relates to the technical field of silicon carbide growth, and comprises a growth crucible, a growth shaft, seed crystals, an X-ray emitter and an X-ray receiver, wherein the growth shaft stretches into the growth crucible, the seed crystals are arranged at one end of the growth shaft stretching into the growth crucible and are used for growing silicon carbide crystals, the X-ray emitter and the X-ray receiver are respectively arranged at two sides of the growth crucible, the X-ray emitter is used for emitting X-rays into the growth crucible in real time, the X-ray receiver is used for receiving the X-rays in real time, and a first speed V1 of a growth surface of the silicon carbide crystal far away from the liquid level of a raw material liquid is monitored according to the received X-rays. Compared with the prior art, the utility model monitors the inside of the growth crucible by X-rays, can monitor the space between the crystal and the liquid level in the growth process, is beneficial to control and adjustment of the growth interface and ensures the growth quality.

Description

Liquid phase method silicon carbide crystal growing device

Technical Field

The utility model relates to the technical field of silicon carbide growth, in particular to a liquid phase method silicon carbide crystal growth device.

Background

The inventor researches that when the liquid phase silicon carbide crystal grows, the graphite crucible is used as a container and a carbon source, so that in the crystal growth process, the graphite crucible is continuously eroded by melt, the liquid level is lowered, and the crystal is pulled by a superposition process, so that the situation of stability damage of a growth interface is very easy to occur, and the control and adjustment of the growth interface are necessary.

However, since the graphite crucible is made of opaque materials and the peripheral structure of the growth furnace is complex, the crystal growth process is difficult to detect from outside to inside, namely, the existing liquid phase method silicon carbide crystal growth process lacks an effective monitoring means, and the pulling speed has the greatest influence on the position of a crystal growth interface under the normal condition, so that the monitoring of the separation speed between the crystal and the liquid level is particularly important.

Disclosure of Invention

The utility model aims to provide a liquid phase method silicon carbide crystal growth device which can monitor the space between a crystal and a liquid level in the growth process, thereby being beneficial to controlling and adjusting a growth interface and ensuring the growth quality.

Embodiments of the present utility model are implemented as follows:

in a first aspect, the utility model provides a liquid phase method silicon carbide crystal growing device, comprising a growing crucible, a growing shaft, seed crystals, an X-ray emitter and an X-ray receiver, wherein the growing shaft stretches into the growing crucible, the seed crystals are arranged at one end of the growing shaft stretching into the growing crucible and are used for growing silicon carbide crystals, the growing crucible is used for containing raw material liquid, the X-ray emitter and the X-ray receiver are respectively arranged at two sides of the growing crucible, the X-ray emitter is used for emitting X-rays into the growing crucible in real time, the X-ray receiver is used for receiving the X-rays in real time, and a first speed V1 of a growing surface of the silicon carbide crystals, which is far away from the liquid surface of the raw material liquid, is monitored according to the received X-rays.

In an alternative embodiment, the liquid phase method silicon carbide crystal growth apparatus further comprises a pulling assembly disposed above the growth crucible and coupled to the growth shaft for pulling the growth shaft and the seed crystal at a second rate V2.

In an alternative embodiment, a pull assembly is electrically coupled to the X-ray receiver, the pull assembly being configured to adjust the second rate V2 in accordance with the first rate V1.

In an alternative embodiment, the lifting assembly comprises a clamping piece, a first driving piece and a first connecting wire, wherein the clamping piece is used for clamping and fixing the growth shaft, the first driving piece is in transmission connection with the clamping piece and used for driving the clamping piece to move up and down, one end of the first connecting wire is connected with the first driving piece, and the other end of the first connecting wire is connected with the X-ray receiver.

In an alternative embodiment, the liquid phase method silicon carbide crystal growth apparatus further comprises a lifting assembly disposed on the bottom side of the growth crucible for lifting the growth crucible at a third rate V3, the third rate V3 being less than the second rate V2.

In an alternative embodiment, a lift assembly is electrically coupled to the X-ray receiver, the lift assembly being configured to adjust the third rate V3 in accordance with the first rate V1.

In an alternative embodiment, the lifting assembly comprises a bearing table, a supporting piece, a second driving piece and a second connecting wire, the growth crucible is arranged on the bearing table, the supporting piece is arranged on the bottom side of the bearing table, the second driving piece is in transmission connection with the supporting piece and used for driving the supporting piece to move up and down, one end of the second connecting wire is connected with the second driving piece, and the other end of the second connecting wire is connected with the X-ray receiver.

In an alternative embodiment, the X-ray receiver includes an imaging unit disposed outside the growth crucible and corresponding to the X-ray emitter for receiving X-rays and generating image information between a growth surface of the silicon carbide crystal and a liquid surface of the feedstock liquid, and a control unit electrically connected to the imaging unit for monitoring the first rate V1 in accordance with the image information.

In an alternative embodiment, the outer periphery of the growth crucible is further provided with a heat insulating layer, and the X-ray emitter and the X-ray receiver are both arranged outside the heat insulating layer.

In an alternative embodiment, the liquid phase silicon carbide crystal growth apparatus further comprises a heating coil, the heating coil is surrounded by the heat insulation layer, and the X-ray emitter and the X-ray receiver are both disposed between the heat insulation layer and the heating coil.

The beneficial effects of the embodiment of the utility model include:

the embodiment of the utility model provides a liquid phase method silicon carbide crystal growing device, which stretches a growing shaft into a growing crucible, a seed crystal is arranged at one end of the growing shaft stretching into the growing crucible, raw material liquid is contained in the growing crucible, an X-ray emitter and an X-ray receiver are arranged at two sides of the growing crucible, the X-ray emitter is used for emitting X-rays into the crucible in real time, the X-ray receiver is used for receiving the X-rays in real time, and a first speed V1 of a silicon carbide crystal far away from the liquid surface of the raw material liquid is monitored in real time according to the received X-rays, so that a worker can conveniently adjust the growing environment and growing parameters according to the first speed V1, and the growing interface is adjusted and controlled, so that the growing interface of the silicon carbide crystal is always positioned at an appropriate position, and the growing quality is ensured. Compared with the prior art, the utility model monitors the inside of the growth crucible by X-rays, can monitor the space between the crystal and the liquid level in the growth process, is beneficial to control and adjustment of the growth interface and ensures the growth quality.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present utility model and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic diagram of the overall structure of a liquid phase method silicon carbide crystal growth apparatus according to an embodiment of the present utility model;

FIG. 2 is a schematic diagram of a partial structure of a liquid phase method silicon carbide crystal growth apparatus according to an embodiment of the present utility model;

fig. 3 is a schematic diagram of the structure of the X-ray emitter and the X-ray receiver in fig. 1.

Icon:

a 100-liquid phase method silicon carbide crystal growing device; 110-growing a crucible; 120-growth axis; 130-seed crystal; 140-X-ray emitters; a 150-X-ray receiver; 151-an imaging unit; 153-a control unit; 155-receiving panel; 160-a pull assembly; 161-clamping member; 163-first driver; 165-a first connection line; 170-a lifting assembly; 171-a carrier; 173-a support; 175-a second driver; 177-a second connection line; 180-an insulating layer; 190-heating coil.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions of the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments of the present utility model. The components of the embodiments of the present utility model generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the utility model, as presented in the figures, is not intended to limit the scope of the utility model, as claimed, but is merely representative of selected embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.

In the description of the present utility model, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the inventive product, are merely for convenience of describing the present utility model and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present utility model. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.

Furthermore, the terms "horizontal," "vertical," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.

In the description of the present utility model, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present utility model will be understood in specific cases by those of ordinary skill in the art.

As disclosed in the background art, there is currently no means for monitoring the interior of a growth crucible well for growing silicon carbide crystals by a liquid phase method. In order to ensure the growth quality, unlike the PVT method, the liquid phase method is most important for controlling and adjusting the growth interface because the growth interface needs to be in a proper gap range with the liquid level. The lack of effective monitoring means makes monitoring of the growth process very difficult.

In order to solve the problems, the utility model provides a novel liquid phase method silicon carbide crystal growth device, and the structure and the principle of the crystal growth device are described in detail below.

DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION

Referring to fig. 1 to 3, the present embodiment provides a liquid phase method silicon carbide crystal growth apparatus 100, which uses X-rays to monitor the inside of a growth crucible 110, so as to monitor the space between the crystal and the liquid surface during the growth process, thereby facilitating control and adjustment of the growth interface and ensuring the growth quality.

The liquid phase method silicon carbide crystal growth apparatus 100 provided in this embodiment includes a growth crucible 110, a growth shaft 120, a seed crystal 130, an X-ray emitter 140 and an X-ray receiver 150, wherein the growth shaft 120 extends into the growth crucible 110, the seed crystal 130 is disposed at one end of the growth shaft 120 extending into the growth crucible 110 for growing silicon carbide crystals, the growth crucible 110 is used for containing a raw material liquid, the X-ray emitter 140 and the X-ray receiver 150 are disposed at two sides of the growth crucible 110, the X-ray emitter 140 is used for emitting X-rays into the growth crucible 110 in real time, the X-ray receiver 150 is used for receiving the X-rays in real time, and a first rate V1 of the growth surface of the silicon carbide crystals away from the liquid surface of the raw material liquid is monitored according to the received X-rays.

In this embodiment, in the actual growth process, silicon carbide in the raw material liquid is crystallized at the growth interface, so as to form a silicon carbide crystal, the X-ray emitter 140 can emit X-rays into the crucible in real time, the X-ray receiver 150 can receive the X-rays in real time, and monitor the first speed V1 of the silicon carbide crystal away from the liquid surface of the raw material liquid in real time according to the received X-rays, so that a worker can conveniently adjust the growth environment and the growth parameters according to the first speed V1, and thus adjust and control the growth interface, so that the growth interface of the silicon carbide crystal is always located at an appropriate position, and the growth quality is ensured. The X-ray emitter 140 and the X-ray receiver 150 can acquire image information of the interior of the crucible, and acquire a first rate V1 of the growth surface of the silicon carbide crystal away from the liquid surface of the raw material liquid according to the real-time image information, and the imaging principle and structure can refer to the existing X-ray imager.

In this embodiment, the liquid phase method silicon carbide crystal growth apparatus 100 further includes a pulling assembly 160, the pulling assembly 160 being disposed above the growth crucible 110 and coupled to the growth shaft 120 for pulling the growth shaft 120 and the seed crystal 130 at a second rate V2. Specifically, since crystallization of the silicon carbide crystal can continue on the growth surface of the seed crystal 130, the crystal gradually approaches the liquid surface as it grows, affecting the subsequent crystallization action, and thus it is necessary to continuously pull the crystal upward, the pulling assembly 160 can pull the growth shaft 120 at a rate such that the seed crystal 130 and the silicon carbide crystal grown thereon move upward, and the second rate V2 should be greater than the growth rate of the crystal.

It should be noted that, in this embodiment, the second rate V2 may be manually adjusted or automatically adjusted, and the second rate V2 may affect the subsequent crystal growth rate, so that the first rate V1 may be adversely affected, for example, when the second rate V2 is too large, the crystal growth rate may be far smaller than the Yu Di pull rate, so that the first rate V1 is too large. In contrast, in this embodiment, the second rate V2 may be feedback-adjusted from the first rate V1, for example, when the first rate V1 is too high, this indicates that the crystal leaving liquid level speed is too high at this time, which may possibly cause the subsequent crystallization to be affected, and the second rate V2 may be reduced at this time, so as to ensure that the first rate V1 is within a proper range.

In the present embodiment, the pulling assembly 160 is electrically connected to the X-ray receiver 150, and the pulling assembly 160 is used for adjusting the second speed V2 according to the first speed V1. Specifically, the pulling speed of the pulling assembly 160 may be automatically adjusted to adjust the second speed V2, and of course, the pulling speed of the pulling assembly 160 may be manually adjusted to adjust the second speed V2 after the first speed V1 is manually obtained.

In this embodiment, the lifting assembly 160 includes a clamping member 161, a first driving member 163 and a first connecting wire 165, where the clamping member 161 is used to clamp and fix the growth shaft 120, the first driving member 163 is in transmission connection with the clamping member 161 and is used to drive the clamping member 161 to move up and down, one end of the first connecting wire 165 is connected with the first driving member 163, and the other end is connected with the X-ray receiver 150. Specifically, the first driving member 163 may be a cylinder, and the cylinder drives the clamping member 161 to move upward, so as to drive the growth shaft 120 to move upward, and the feeding speed of the cylinder is positively correlated with the second speed V2, and the second speed V2 may be adjusted by adjusting the feeding speed of the cylinder. And, here, the first driving part 163 is connected with the X-ray receiver 150 through the first connection line 165, so that the first driving part 163 can be controlled by the X-ray receiver 150, and the control manner and the control circuit can be controlled by a conventional single chip microcomputer, and can be described with reference to related descriptions in the prior art.

In this embodiment, the liquid phase silicon carbide crystal growth apparatus 100 further includes a lifting assembly 170, the lifting assembly 170 being disposed at the bottom side of the growth crucible 110 for lifting the growth crucible 110 at a third rate V3, the third rate V3 being less than the second rate V2. Specifically, because the graphite crucible is adopted as the container, and the graphite crucible can also be used as a carbon source, the graphite crucible is continuously eroded by melt in the growth process, and the liquid level of raw materials can be reduced, so that the growth crucible 110 is lifted by the lifting assembly 170, the reduction of the liquid level in the growth process can be compensated, and the position of the liquid level is always in a proper position. The third rate V3 may also be used to adjust the distance between the growth interface and the liquid surface.

It should be noted that, in this embodiment, the lifting assembly 170 and the lifting assembly 160 may jointly control the growth interface, that is, the first rate V1 is used to properly adjust the second rate V2 and the third rate V3, so as to ensure the stability of the growth interface.

In this embodiment, the lift assembly 170 is electrically connected to the X-ray receiver 150, and the lift assembly 170 is configured to adjust the third velocity V3 according to the first velocity V1. Specifically, the lifting speed of the lifting assembly 170 may be automatically adjusted to adjust the third speed V3, and of course, the adjustment may be performed manually herein, for example, after the first speed V1 is obtained manually, the lifting speed of the lifting assembly 160 is manually adjusted to adjust the third speed V3.

In this embodiment, the lifting assembly 170 includes a carrying table 171, a supporting member 173, a second driving member 175 and a second connecting line 177, the growth crucible 110 is disposed on the carrying table 171, the supporting member 173 is disposed at the bottom side of the carrying table 171, the second driving member 175 is in transmission connection with the supporting member 173, and is used for driving the supporting member 173 to move up and down, one end of the second connecting line 177 is connected with the second driving member 175, and the other end is connected with the X-ray receiver 150. Specifically, the second driving member 175 may be an air cylinder, and the air cylinder is connected to the supporting member 173, so as to drive the supporting member 173 and the carrying table 171 to rise. The second driving element 175 is connected to the X-ray receiver 150 through a second connection line 177, so that the second driving element 175 can be controlled by the X-ray receiver 150, and the control manner and the control circuit can be controlled by a conventional single-chip microcomputer, which can be described in the related art.

In the present embodiment, the X-ray receiver 150 includes an imaging unit 151 and a control unit 153, the imaging unit 151 being disposed outside the growth crucible 110 and corresponding to the X-ray emitter 140 for receiving X-rays and generating image information between a growth surface of the silicon carbide crystal and a liquid surface of the raw material liquid, the control unit 153 being electrically connected to the imaging unit 151 for monitoring the first velocity V1 in accordance with the image information. Specifically, the control unit 153 and the imaging unit 151 may be integrated on the same circuit board, the imaging unit 151 further has an exposed receiving panel 155, and the receiving panel 155 may receive X-rays, where the principle of emission and receiving of the X-ray emitter 140 and the receiving panel 155 may refer to the existing X-ray imaging technology, and not specifically described herein. The control unit 153 may be a single chip microcomputer unit, for example, an 8-bit single chip microcomputer, an MSP430 single chip microcomputer, or a TMS single chip microcomputer, etc., where the control unit 153 may generate a signal of the first rate V1 according to the image information, compare the first rate V1 with a preset value, if the first rate V1 is smaller than the preset value, perform feedback adjustment on the second rate V2 or the third rate V3, if the first rate V1 is greater than or equal to the preset value, then keep the current parameter growing.

It should be noted that, here, the preset value is the difference between the second rate V2 and the third rate V3, where the second rate V2 is greater than the third rate V3, if V1 is less than V2-V3, the growth pulling speed is reduced or the lifting speed of the growth crucible 110 is increased, i.e. V2 is reduced or V3 is increased; if V1 is more than or equal to V2-V3, the current parameter growth is kept. In addition, V1 is required to be less than or equal to 0.25mm/h to ensure good growth.

In this embodiment, the outer periphery of the growth crucible 110 is further provided with an insulating layer 180, and the X-ray emitter 140 and the X-ray receiver 150 are both disposed outside the insulating layer 180. Specifically, the heat-insulating layer 180 may be a graphite felt, which can perform a good heat-insulating effect. In addition, the X-ray emitter 140 and the X-ray receiver 150 are both arranged outside the heat preservation layer 180 and are spaced from the heat preservation layer 180, so that the influence on the X-ray emission and the X-ray reception in the lifting process can be avoided. Of course, a wider transmission and reception range may be used, and in this case, the X-ray emitter 140 and the X-ray receiver 150 may be mounted on the outer surface of the insulating layer 180.

In this embodiment, the liquid phase silicon carbide crystal growth apparatus 100 further includes a heating coil 190, the heating coil 190 is disposed around the heat insulation layer 180, and the X-ray emitter 140 and the X-ray receiver 150 are disposed between the heat insulation layer 180 and the heating coil 190. Specifically, the heating coil 190 can heat the graphite crucible, and since the heating coil 190 wraps the entire periphery of the graphite crucible, the entire interior of the graphite crucible can be heated, avoiding the occurrence of local uneven heating.

The embodiment provides a liquid phase method silicon carbide crystal growing device 100, which stretches a growing shaft 120 into a growing crucible 110, a seed crystal 130 is arranged at one end of the growing shaft 120 stretching into the growing crucible 110, raw material liquid is contained in the growing crucible 110, an X-ray emitter 140 and an X-ray receiver 150 are arranged at two sides of the growing crucible 110, the X-ray emitter 140 is used for emitting X-rays into the crucible in real time, the X-ray receiver 150 is used for receiving the X-rays in real time, and a first speed V1 of the silicon carbide crystal far away from the liquid level of the raw material liquid is monitored in real time according to the received X-rays, so that a worker can conveniently adjust the growing environment and the growing parameters according to the first speed V1, and the growing interface is adjusted and controlled, so that the growing interface of the silicon carbide crystal is always positioned at an appropriate position, and the growing quality is ensured. Compared with the prior art, the embodiment monitors the inside of the growth crucible 110 by the X-rays, can monitor the space between the crystal and the liquid level in the growth process, and is beneficial to controlling and adjusting the growth interface and ensuring the growth quality.

The above is only a preferred embodiment of the present utility model, and is not intended to limit the present utility model, but various modifications and variations can be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.

Claims (10)

1. The utility model provides a liquid phase method carborundum crystal growing device, its characterized in that includes growth crucible (110), growth axle (120), seed crystal (130), X ray emitter (140) and X ray receiver (150), growth axle (120) stretch into growth crucible (110), seed crystal (130) set up growth axle (120) stretch into the one end of growth crucible (110) for growing carborundum crystal, growth crucible (110) are used for holding the feed liquid, X ray emitter (140) with X ray receiver (150) divide to establish in growth crucible (110) both sides, X ray emitter (140) are used for to the X ray is launched in growth crucible (110) in real time, X ray receiver (150) are used for receiving the X ray in real time to according to the first rate V1 of the liquid level of the monitoring carborundum crystal of receiving the X ray and keeping away from the feed liquid.

2. The liquid phase method silicon carbide crystal growth apparatus of claim 1, further comprising a pulling assembly (160), said pulling assembly (160) being disposed above said growth crucible (110) and being coupled to said growth shaft (120) for pulling said growth shaft (120) and said seed crystal (130) at a second rate V2.

3. The liquid phase method silicon carbide crystal growth apparatus of claim 2, wherein said pull-up assembly (160) is electrically connected to said X-ray receiver (150), said pull-up assembly (160) being configured to adjust the second rate V2 in accordance with the first rate V1.

4. A liquid phase method silicon carbide crystal growth apparatus according to claim 3, wherein said pulling assembly (160) comprises a clamping member (161), a first driving member (163) and a first connecting wire (165), said clamping member (161) is used for clamping and fixing said growth shaft (120), said first driving member (163) is in transmission connection with said clamping member (161) for driving said clamping member (161) to move up and down, one end of said first connecting wire (165) is connected with said first driving member (163), and the other end is connected with said X-ray receiver (150).

5. A liquid phase method silicon carbide crystal growth apparatus according to claim 3 further comprising a lifting assembly (170), said lifting assembly (170) being disposed on the bottom side of said growth crucible (110) for lifting said growth crucible (110) at a third rate V3, said third rate V3 being less than said second rate V2.

6. The liquid phase silicon carbide crystal growth apparatus of claim 5, wherein said lift assembly (170) is electrically connected to said X-ray receiver (150), said lift assembly (170) being configured to adjust a third rate V3 based on the first rate V1.

7. The liquid phase method silicon carbide crystal growth apparatus as set forth in claim 5, wherein said lifting assembly (170) comprises a carrying table (171), a support member (173), a second driving member (175) and a second connecting wire (177), said growth crucible (110) is disposed on said carrying table (171), said support member (173) is disposed on a bottom side of said carrying table (171), said second driving member (175) is in transmission connection with said support member (173) for driving said support member (173) to move up and down, one end of said second connecting wire (177) is connected with said second driving member (175), and the other end is connected with said X-ray receiver (150).

8. The liquid phase method silicon carbide crystal growth apparatus as set forth in any one of claims 1 to 7, wherein said X-ray receiver (150) comprises an imaging unit (151) and a control unit (153), said imaging unit (151) being disposed outside said growth crucible (110) and corresponding to the X-ray emitter (140) for receiving X-rays and generating image information between the silicon carbide crystal and the liquid surface of the raw material liquid, said control unit (153) being electrically connected to said imaging unit (151) for monitoring the first rate V1 in accordance with said image information.

9. The liquid phase method silicon carbide crystal growth apparatus as set forth in any one of claims 1 to 7, wherein an insulating layer (180) is further provided on the periphery of said growth crucible (110), and said X-ray emitter (140) and said X-ray receiver (150) are both provided outside said insulating layer (180).

10. The liquid phase method silicon carbide crystal growth apparatus as set forth in claim 9, further comprising a heating coil (190), said heating coil (190) being disposed around said heat insulating layer (180), said X-ray emitter (140) and said X-ray receiver (150) being disposed between said heat insulating layer (180) and said heating coil (190).