CN219921857U - Tumor electric field treatment system and electrode slice thereof - Google Patents

Tumor electric field treatment system and electrode slice thereof Download PDF

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Publication number
CN219921857U
CN219921857U CN202122366025.1U CN202122366025U CN219921857U CN 219921857 U CN219921857 U CN 219921857U CN 202122366025 U CN202122366025 U CN 202122366025U CN 219921857 U CN219921857 U CN 219921857U
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electric field
flexible circuit
type semiconductor
oncological
therapy system
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CN202122366025.1U
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陈晟
孙虎
沈琪超
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Jiangsu Hailai Xinchuang Medical Technology Co Ltd
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Jiangsu Hailai Xinchuang Medical Technology Co Ltd
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Abstract

The utility model provides a tumor electric field treatment system and an electrode slice thereof, comprising: an AC signal generator for generating an AC electric signal for tumor electric field treatment, a signal controller electrically connected with the AC signal generator, and an electrode sheet for applying the AC electric signal for tumor electric field treatment generated by the AC signal generator to a tumor site of a patient through the signal controller. The electrode plate comprises a plurality of electrode units which are arranged at intervals and a flexible circuit which is electrically connected with each electrode unit. Each electrode unit is provided with a dielectric element which is electrically connected with the corresponding part of the flexible circuit and applies an alternating electric field to the tumor part of the patient. Each electrode unit is also provided with a semiconductor refrigerator welded with the corresponding part of the flexible circuit, and the semiconductor refrigerator is arranged opposite to the dielectric element and is respectively positioned at two opposite sides of the flexible circuit. The semiconductor refrigerator actively absorbs heat generated by the dielectric element when the alternating electric field is applied and emits the heat, so that the heat dissipation efficiency can be improved.

Description

Tumor electric field treatment system and electrode slice thereof
Technical Field
The utility model relates to the technical field of medical equipment, in particular to a tumor electric field treatment system and an electrode plate thereof.
Background
Cell proliferation is an important vital feature of organisms, cells proliferate in a dividing manner. Single cell organisms produce new individuals in a cell division manner. Multicellular organisms produce new cells in a cell division manner. In addition, cell proliferation may be mediated by human intervention, such as the use of antibiotics, either physically or chemically.
Normal cells are transformed into cancer cells by mutation of protooncogenes and cancer suppressor genes caused by oncogenes such as physical, chemical, and viral factors. Cancer cells have three characteristics of unlimited proliferation, transformation and easy metastasis, and can proliferate infinitely and destroy normal cell tissues. In addition to uncontrolled division, cancer cells can also invade locally surrounding normal tissues and metastasize to other parts of the body even via the circulatory system or lymphatic system in the body, causing new tumors to form elsewhere.
Malignant tumors have more frequent cell division than other normal tissues, and inhibition of abnormal division of cancer cells is the basis for the treatment of cancer. Based on the high sensitivity of some cancer cells to certain physical or chemical methods, irradiation and chemotherapeutics are effective means of inhibiting cancer cell proliferation in cancer therapy. However, the sensitivity of tumor cells to chemical agents is not high enough to be higher than that of most normal tissues, which results in the chemical agents damaging normal tissue cells, and bone marrow suppression, gastrointestinal toxicity and immunosuppression are typical side effects of chemotherapeutic drugs.
Current and electric field therapy have been used for many years as a physical therapy approach. The first type of medical application is to apply a relatively slow rate of change of current to a human body or tissue through a conductive medium, such as a muscle stimulator, a heart defibrillator, etc., and these medical devices typically apply heat to the corresponding tissue by passing current through the body through a pair of conductive electrodes to stimulate, ablate, cauterize, etc. And the other purpose is to generate waves with higher change rate through a special electric field generating device to act on corresponding tissues, and then conduct energy to a human body through an insulating material in a radiation or induction mode.
Research shows that the electric field treatment has obvious effect in treating glioblastoma, non-small cell lung cancer, malignant pleural mesothelioma and other diseases, and the electric field applied by the method can influence the aggregation of tubulin, prevent spindle body formation, inhibit mitosis process, induce cancer cell apoptosis, and meanwhile, the electric field strength and the service time become key factors in the treatment process.
When an alternating electric field is applied to the surface of a living body, a certain side effect is generated no matter how high the frequency is, and one side effect is represented by the increase of the concentration of harmful substances generated by electrolysis of biological materials, for example, long-term contact of an electrode plate with skin can block sweat glands, hair follicles and the like outside the skin, so that water and chemical substances accumulate on the surface of the skin for a long time, and the superficial layer of the skin is damaged. The other side effect is that under the stimulation of an electric field, heat generated by the movement friction of water molecules in tissues is accumulated on the surface of the skin, and cannot be rapidly emitted, so that the superficial layer of the skin is scalded at low temperature.
At present, the alternating voltage applied between the electrode plates is reduced to reduce the alternating electric field applied to the tumor part of the patient by the electrodes, so as to reduce the heat generation and control the surface temperature of the patient, or the alternating voltage applied to the electrode plates is directly turned off to avoid the low-temperature scald of the skin on the surface of the patient caused by the accumulation of heat on the surface of the patient due to long-time treatment. However, this way of switching off the electric field results in a shortening of the effective treatment time of the electric field treatment.
Therefore, there is a need to provide a tumor electric field treatment system and electrode pads thereof that overcome the above-mentioned technical problems.
Disclosure of Invention
The utility model provides a tumor electric field treatment system and an electrode plate thereof, which can apply an alternating electric field to a specific part of a patient for a long time and continuously without causing low-temperature scalding of the surface of the patient.
The utility model provides a tumor electric field treatment system, comprising: the electrode plate comprises a plurality of electrode units arranged at intervals and flexible circuits electrically connected with the electrode units, each electrode unit is provided with a dielectric element electrically connected with the corresponding part of the flexible circuit and applying an alternating electric field to the tumor part of the patient, and each electrode unit is also provided with a semiconductor refrigerator welded with the corresponding part of the flexible circuit, and the semiconductor refrigerators are arranged opposite to the dielectric elements and are respectively positioned on the opposite sides of the flexible circuit.
Optionally, a conductive part electrically connected with the dielectric element is arranged on one side surface of the flexible circuit, and a welding part welded with the semiconductor refrigerator is arranged on the other side surface of the flexible circuit opposite to the conductive part.
Optionally, the partial electrode unit further has a temperature sensor electrically connected to the flexible circuit.
Optionally, the temperature sensor is located on the same side of the flexible circuit as the dielectric element.
Optionally, the dielectric element has a perforation disposed therethrough for receiving the temperature sensor.
Optionally, the semiconductor refrigerator is fabricated using the peltier effect of a semiconductor, and includes a refrigeration side disposed proximate to the dielectric element and a heat dissipation side disposed opposite the refrigeration side.
Optionally, the semiconductor refrigerator further comprises an N-type semiconductor and a P-type semiconductor which are clamped at the refrigeration end and the radiating end, and the N-type semiconductor and the P-type semiconductor are arranged side by side at intervals.
Optionally, the semiconductor refrigerator further comprises a sealant filled between the refrigeration end and the heat dissipation end for sealing the N-type semiconductor and the P-type semiconductor.
Optionally, the refrigeration end of semiconductor refrigerator is including locating the cold junction potsherd that the flexible circuit deviates from dielectric element one side, locating the cold junction heat conduction spare on the cold junction potsherd and the two cold junction metal conductors on the cold junction heat conduction spare are located to the interval, be equipped with the pad that corresponds with the welding portion of flexible circuit on the cold junction potsherd.
Optionally, one of the two cold end ceramic plates is contacted with one end of the N-type semiconductor, and the other one is contacted with one end of the P-type semiconductor.
Optionally, the heat dissipation end of the semiconductor refrigerator comprises a hot end ceramic plate far away from the flexible circuit, a hot end heat transfer element arranged on one side of the hot end ceramic plate close to the refrigeration end, and a hot end metal conductor in contact with the hot end heat transfer element, wherein the hot end heat transfer element is clamped between the hot end ceramic plate and the hot end metal conductor.
Optionally, the hot-end metal conductor is simultaneously contacted with the other end of the N-type semiconductor and the other end of the P-type semiconductor.
Optionally, the N-type semiconductor and the P-type semiconductor are arranged between the cold end metal conductor of the refrigerating end and the hot end metal conductor of the heat dissipating end in parallel at intervals.
Optionally, the flexible circuit includes a plurality of main body portions disposed at intervals and a connection portion electrically connected to the adjacent main body portions, and the main body portion of the flexible circuit is sandwiched between the dielectric element and the semiconductor refrigerator.
Optionally, the dielectric element is provided on a side of the body portion of the flexible circuit facing the tumor site of the patient, and the semiconductor refrigerator is provided on a side of the body portion of the flexible circuit facing away from the tumor site of the patient.
Optionally, the temperature sensor is provided on a side of the body of the flexible circuit facing the tumor site of the patient.
The utility model also provides an electrode plate of the tumor electric field treatment system, which is configured at a corresponding position of a tumor of a patient and comprises a plurality of electrode units which are arranged at intervals and a flexible circuit which is electrically connected with each electrode unit, wherein each electrode unit is provided with a dielectric element which is electrically connected with the corresponding position of the flexible circuit and applies an alternating electric field to the tumor position of the patient, each electrode unit is also provided with a semiconductor refrigerator which is welded with the corresponding position of the flexible circuit, and the semiconductor refrigerators are arranged opposite to the dielectric element and are respectively positioned at two opposite sides of the flexible circuit.
Optionally, the partial electrode unit further has a temperature sensor electrically connected to the flexible circuit.
Optionally, the dielectric element has a through hole provided therethrough, and the temperature sensor is accommodated in the through hole.
Optionally, the semiconductor refrigerator is fabricated using the peltier effect of a semiconductor, and includes a refrigeration side disposed proximate to the dielectric element and a heat dissipation side disposed opposite the refrigeration side.
Optionally, the semiconductor refrigerator further comprises an N-type semiconductor and a P-type semiconductor which are clamped at the refrigeration end and the radiating end, and the N-type semiconductor and the P-type semiconductor are arranged side by side at intervals.
Optionally, the semiconductor refrigerator further comprises a sealant filled between the refrigeration end and the heat dissipation end for sealing the N-type semiconductor and the P-type semiconductor.
Optionally, the refrigeration end of semiconductor refrigerator is including locating the cold junction potsherd that the flexible circuit deviates from dielectric element one side, locating the cold junction heat conduction spare on the cold junction potsherd and the two cold junction metal conductors on the cold junction heat conduction spare are located to the interval, be equipped with on the cold junction potsherd with flexible circuit welded pad.
Optionally, the heat dissipation end of the semiconductor refrigerator comprises a hot end ceramic plate far away from the flexible circuit, a hot end heat transfer element arranged on one side of the hot end ceramic plate close to the refrigeration end, and a hot end metal conductor in contact with the hot end heat transfer element, wherein the hot end heat transfer element is clamped between the hot end ceramic plate and the hot end metal conductor.
Optionally, the N-type semiconductor and the P-type semiconductor are arranged side by side and spaced between the cold end metal conductor of the cooling end and the hot end metal conductor of the heat dissipation end.
According to the technical scheme provided by the embodiment of the utility model, the semiconductor refrigerator is fully utilized, the alternating voltage of the electric field is not required to be regulated, active heat absorption refrigeration can be performed, and the heat dissipation efficiency is improved; and the temperature of the surface of the skin can be reduced while the tumor electric field treatment system is kept on as much as possible through temperature step control.
Drawings
Fig. 1 is a schematic view showing a partial structure of an embodiment of an electrode sheet of the tumor electric field treatment system of the present utility model.
Fig. 2 is an exploded perspective view of the electrical functional components of the electrode tab shown in fig. 1.
Fig. 3 is a schematic structural view of a dielectric element of the electrode sheet shown in fig. 2.
Fig. 4 is a schematic view showing a flexible circuit structure of an electrical functional component of the electrode sheet shown in fig. 2.
Fig. 5 is a schematic view showing the structure of the semiconductor refrigerator of the electrode sheet shown in fig. 2.
Fig. 6 is a cross-sectional view of the semiconductor refrigerator with the flexible circuit of the electrode sheet shown in fig. 5.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the utility model. Rather, they are merely examples of apparatus consistent with aspects of the utility model as detailed in the accompanying claims.
The utility model provides a tumor electric field treatment system (not shown), which is used for applying an alternating electric field to a tumor part of a patient to interfere or inhibit mitosis of tumor cells so as to inhibit or treat tumors, and comprises an electrode sheet 10 which is applied to a corresponding body surface of the tumor part of the patient, an AC signal generator (not shown) and a signal controller (not shown) which is electrically connected with the electrode sheet 10 and the AC signal generator (not shown). The tumor electric field treatment system (not shown) generates an alternating current signal required for tumor electric field treatment by an AC signal generator (not shown), and applies the alternating current signal generated by the AC signal generator to the electrode sheet 10 by a signal controller (not shown), thereby performing electric field treatment on a tumor site of a patient by the electrode sheet 10. The tumor electric field treatment system also monitors and controls the working state of the electrode sheet 10 through a signal controller (not shown) so as to avoid low-temperature scalding of the body surface of the patient when the alternating electric field is continuously applied to the tumor part of the patient through the electrode sheet 10 for a long time.
Referring to fig. 1 to 6, the electrode sheet 10 can be applied to a corresponding body surface of a tumor site of a patient to apply an alternating electric field to the tumor site of the patient to interfere with or inhibit mitosis of tumor cells, thereby treating tumors, and comprises a flexible backing 200, an electrical functional unit 100 adhered to the backing 200, a support 300 adhered to the backing 200, and an adhesive 400 adhered to the support 300 and corresponding to the skin of the body surface of the tumor site of the patient. The electrode sheet 10 is attached to the corresponding body surface of the tumor site of the patient through the backing 200, and an alternating electric field is applied to the tumor site of the patient through the electric functional assembly 100 to interfere or prevent the mitosis of tumor cells of the patient, thereby achieving the purpose of treating tumor.
The backing 200 is provided in the form of a sheet, which is made primarily of a flexible, breathable, insulating material. The back lining 200 has a plurality of ventilation holes (not shown) penetrating through, so that hair follicles and sweat glands of the skin covered by the back lining 200 on the body surface of the patient can breathe freely when the back lining 200 is applied to the body surface of the patient, and skin inflammation caused by damage to the superficial skin layer of the patient due to blockage of the sweat glands and hair follicles on the body surface of the patient covered by the back lining 200 is avoided. The backing 200 is a mesh fabric. Specifically, the backing 200 is a mesh-like nonwoven fabric, which is soft, light, thin, moisture-proof, breathable, and can be applied to the surface of the patient for a long time to keep the skin surface of the patient dry. The side of the backing 200 facing the patient's body surface is also coated with a biocompatible adhesive for tightly adhering the backing 200 to the patient's target area body surface.
Referring now to fig. 2-6, the electrical functional assembly 100 is adhered to the backing 200 by a biocompatible adhesive on the backing 200 for applying an alternating electric field to a tumor site in a patient. The electrical functional assembly 100 includes a flexible circuit 102, a temperature sensor 113 disposed on the flexible circuit 102, and a dielectric element 103 and a semiconductor refrigerator 104 disposed on opposite sides of the flexible circuit 102. The temperature sensor 113 and the semiconductor refrigerator 104 are located on opposite sides of the flexible circuit 102, respectively. The temperature sensor 113 is located on the same side of the flexible circuit 102 as the dielectric element 103. The dielectric element 103 is disposed on a side of the flexible circuit 102 near the patient's body surface, and the semiconductor refrigerator 104 is disposed on a side of the flexible circuit 102 away from the patient's body surface. The electrical functional assembly 100 is closely attached to the backing 200 by adhering the semiconductor refrigerator 104 and the corresponding portion of the flexible circuit 102 to the biocompatible adhesive coated on the backing 200, respectively. The semiconductor refrigerator 104 is arranged on one side of the flexible circuit 102 far away from the surface of the patient through welding, and is used for rapidly radiating out heat accumulated on the skin of the surface of the patient, so that the phenomenon that the skin of the surface corresponding to the tumor part of the patient is scalded at a low temperature due to heat accumulation due to the fact that alternating voltage is continuously applied to the flexible circuit 102 and the dielectric element 103 which are electrically connected for a long time is avoided.
The flexible circuit 102 has a plurality of main body portions 110 arranged in a circular shape, and a connection portion 111 connected to the main body portions 110. The support 300 is provided at a corresponding position of the main body 110 of the flexible circuit 102. The connection portion 111 is provided in a band or strip shape, and may be attached to the backing 200 by a biocompatible adhesive provided on the backing 200. The body 110 has a conductive portion (not shown) exposed on the surface thereof on the side facing the patient's body surface, and can be soldered to the corresponding portion of the dielectric element 103 to electrically connect the flexible circuit 102 and the dielectric element 103. The electrode sheet 10 transmits an alternating current signal generated by an AC signal generator (not shown) to the dielectric element 103 through a conductive portion (not shown) of the main body portion 110 of the flexible circuit 102 exposed to the side thereof close to the body surface of the patient, and applies an alternating electric field to the tumor site of the patient through the dielectric element 103. The body 110 also has a solder portion 108 exposed on the surface thereof on the side thereof away from the patient's body surface, and is soldered to a corresponding portion of the semiconductor refrigerator 104 to electrically connect the flexible circuit 102 to the semiconductor refrigerator 104. The welded portion 108 is provided on the side of the main body 110 facing the backing 200, and includes two welded portions 108A and 108B provided at a distance from each other.
In this embodiment, a plurality of main body portions 110 are disposed at intervals, and adjacent main body portions 110 disposed at intervals are connected by a connecting portion 111. The plurality of dielectric elements 103 are also provided at intervals on the corresponding main body 110. The number of dielectric elements 103 corresponds to the number of main body portions 110. The number of semiconductor refrigerators 104 corresponds to the number of dielectric elements 103. The semiconductor refrigerators 104 are provided on the main body 110 at intervals, and are provided on opposite sides of the main body 110 from the dielectric element 103, respectively. The main body 110 of the flexible circuit 102 is sandwiched between the semiconductor refrigerator 104 and the dielectric element 103. The dielectric element 103 and the semiconductor refrigerator 104 constitute the electrode unit 101 of the electrical function module 100. The plurality of electrode units 101 disposed at intervals are electrically connected through the connection portion 111 of the flexible circuit 102. Each electrode unit 101 transmits an alternating current signal generated by an AC signal generator to its dielectric element 103 through the main body portion 110 of the flexible circuit 102. Each electrode unit 101 is soldered to the semiconductor refrigerator 104 by a soldering portion 108 on the main body 110 of the flexible circuit 102, and the purpose of transmitting direct current to the semiconductor refrigerator 104 through the flexible circuit 102 and activating the semiconductor refrigerator 104 to dissipate heat is achieved. The electrode unit 101 of the electrical functional assembly 100 may further comprise a temperature sensor 113 provided on the body portion 110 of the flexible circuit 102.
The temperature sensor 113 is provided on the main body 110 of the flexible circuit 102 by soldering. The temperature sensor 113 is provided on a side of the main body 110 of the flexible circuit 102 close to the body surface of the patient. The temperature sensor 113 is located at the middle of the main body 110 of the flexible circuit 102, and is used for detecting the temperature of the corresponding adhesive element 400, and further detecting the temperature of the body surface of the patient corresponding to the adhesive element 400. The temperature sensor 113 is located between the flexible circuit 102 and the adhesive 400. The temperature sensor 113 is a thermistor. The temperature sensor 113 is used for detecting the temperature of the adhesive piece 400 directly attached to the surface of the patient, and further reasonably controlling the applied alternating electric field, so as to avoid low-temperature scald of the skin of the surface of the patient caused by the fact that the surface of the patient gathers on the surface of the patient due to the heat generated by mutual friction of water molecules of the human body under the action of the alternating electric field caused by applying the alternating electric field to the surface of the patient through the electrode sheet 10 for a long time. The number of temperature sensors 113 is at most the same as the number of dielectric elements 103. That is, in other embodiments, the number of temperature sensors 113 may be less than the number of dielectric elements 103. Specifically, the temperature sensor 113 is soldered to the main body 110 of some of the flexible circuits 102, and the temperature sensor 113 is not soldered to the main body 110 of some of the flexible circuits 102. The temperature sensor 113 is optionally soldered to the body portion 110 of the flexible circuit 102.
The dielectric element 103 has a substantially circular sheet-like structure, and is provided on a side of the main body 110 of the flexible circuit 102 facing the body surface of the patient by soldering. The dielectric element 103 is formed of a material having a relatively high dielectric constant, which has a property of blocking direct current but allowing alternating current to pass through. The dielectric element 103 in this embodiment is a ceramic plate with a relatively high dielectric constant, which is at least greater than 1000. The dielectric element 103 has a through hole 112 provided therethrough for accommodating a temperature sensor 113. The through hole 112 is disposed in the middle of the dielectric element 103. The diameter of the perforation 112 is slightly larger than the width of the temperature sensor 113. The gap between the through hole 112 of the dielectric element 103 and the temperature sensor 113 is filled with a sealant to avoid that moisture enters the through hole 112 to contact the welding point of the temperature sensor 113 and the main body 110 of the flexible circuit 102 to cause a short circuit. The dimensions of the dielectric element 103 are slightly smaller than the dimensions of the main body portion 110 of the flexible circuit 102. After being soldered to the main body 110 of the flexible circuit 102, the dielectric element 103 fills the gap between the dielectric element 103 and the main body 110 of the flexible circuit 102 with a sealant, thereby sealing the soldered portion (not shown) between the dielectric element 103 and the main body 110 of the flexible circuit 102.
The semiconductor refrigerator 104 is provided in a circular sheet shape, and is soldered to the soldering portion 108 of the main body 110 of the flexible circuit 102 to electrically connect with the flexible circuit 102. The semiconductor refrigerator 104 is sandwiched between the main body 110 of the flexible circuit 102 and the backing 200, so that heat can be quickly dissipated from the skin of the patient to which the electrode sheet 10 is applied. The semiconductor refrigerator 104 is provided on one side to the main body 110 of the flexible circuit 102 by soldering, and on the other side to the backing 200 by a biocompatible adhesive provided on the backing 200. The semiconductor refrigerator 104 has a refrigeration end 105 near the main body 110 of the flexible circuit 102, a heat dissipation end 106 remote from the main body 110 of the flexible circuit 102, and an N-type semiconductor 115 and a P-type semiconductor 116 sandwiched between the refrigeration end 105 and the heat dissipation end 106. The semiconductor refrigerator 104 is attached to the backing 200 by the heat dissipation end 106. The N-type semiconductor 115 and the P-type semiconductor 116 are each mainly made of bismuth telluride added with impurities through special treatment. The semiconductor refrigerator 104 is electrically connected between the refrigerating terminal 105 and the heat dissipating terminal 106 through the N-type semiconductor 115 and the P-type semiconductor 116.
The manufacturing side 105 has pads 123 corresponding to the solder 108 on the main body 110 of the flex circuit 102. The pads 123 include a positive electrode pad 123A soldered to the soldering portion 108A of the main body portion 110 of the flexible circuit 102 and a negative electrode pad 123B soldered to the soldering portion 108B of the main body portion 110 of the flexible circuit 102. The refrigeration side 105 is disposed on the flexible circuit 102 through the bonding pad 123, and is electrically connected to the flexible circuit 102 through the bonding pad 123. The cold side 105 includes a cold side ceramic sheet 117 soldered to the main body 110 of the flexible circuit 102, a cold side heat conducting member 118 disposed on a side of the cold side ceramic sheet 117 remote from the flexible circuit 102, and two cold side metal conductors 119 disposed on the cold side heat conducting member 118. The two cold end metal conductors 119 are arranged in parallel at intervals and are respectively connected with the N-type semiconductor 115 and the P-type semiconductor 116.
Pads 123 are provided on the side of cold side ceramic wafer 117 facing flex circuit 102. The cold end ceramic wafer 117 is generally circular in sheet form and is slightly smaller in size than the main body portion 110 of the flex circuit 102. A gap (not shown) exists between the cold side ceramic sheet 117 and the main body 110 of the flexible circuit 102 after the two are soldered to the pads 123 by the soldering portion 108. The gaps (not shown) are filled with the sealant 124, so that the short circuit caused by erosion of the welding part by the gaps (not shown) between the cold-end ceramic sheet 117 and the main body 110 of the flexible circuit 102 due to water vapor on the body surface of the patient can be avoided, and the electrical connection between the cold-end ceramic sheet 117 and the flexible circuit 102 is prevented. The cold end ceramic sheet 117 is sandwiched between the main body 110 of the flex circuit 102 and the cold end heat conducting member 118.
The cold side heat conducting member 118 is in an integrally provided circular sheet-like configuration for securing the cold side metal conductors 119 to the cold side ceramic sheets 117. The dimensions of the cold side heat conducting member 118 are slightly smaller than the dimensions of the cold side ceramic plate 117. The cold side heat conductive member 118 and the main body portion 110 of the flexible circuit 102 are located on opposite sides of the cold side ceramic plate 117, respectively. The cold side heat conducting member 118 is made of a thermally conductive and electrically non-conductive material. The cold side heat conducting member 118 may be a thermally conductive silicone. The side of the cold-end heat conducting member 118 away from the cold-end ceramic plate 117 is respectively provided with two concave spaces (not numbered) for accommodating the cold-end metal conductors 119 in a downward concave manner from the top. The two concave spaces (not numbered) are arranged at intervals and are arranged in a circular shape.
The two cold end metal conductors 119 are respectively disposed in corresponding concave spaces (not numbered) and protrude from the top ends of the cold end heat conducting members 118. The portions of the cold end metal conductors 119 protruding from the cold end heat conducting member 118 have the same height. That is, the two cold-end metal conductors 119 protrude from one side of the cold-end heat conductive member 118 to be at the same level. The two spaced apart cold end metal conductors 119 are of substantially uniform size. The cold end metal conductor 119 is formed in a substantially circular sheet shape and is made of the same material as the N-type semiconductor 115 and the P-type semiconductor 116. The cold end metal conductor 119 is preferably made of copper. The diameter of the cold side metal conductors 119 is approximately the same as the diameter of the recessed spaces (not numbered) of the cold side heat conductors 118. Two spaced apart cold end metal conductors 119 are provided on the side of the cold end heat conductor 118 remote from the flex circuit 102. The cold side heat conducting member 118 is sandwiched between the cold side metal conductor 119 and the cold side ceramic plate 117. The cold end ceramic plate 117 and the cold end heat conducting member 118 are respectively provided with two corresponding conductive traces (not shown). One end of each of the two conductive traces on cold side ceramic tile 117 is connected to a respective one of pads 123A, 123B. Two spaced apart cold end metal conductors 119 are assembled to the cold end ceramic plate 117 by cold end heat conductors 118.
The N-type semiconductor 115 and the P-type semiconductor 116 are each disposed in a substantially column shape. The N-type semiconductor 115 and the P-type semiconductor 116 are respectively disposed on the corresponding cold-end metal conductors 119. The diameter of N-type semiconductor 115 is the same as the diameter of the corresponding cold end metal conductor 119. The diameter of the P-type semiconductor 116 is the same as the diameter of the corresponding cold end metal conductor 119. Both the N-type semiconductor 115 and the P-type semiconductor 116 are made of copper. The N-type semiconductor 115 and the P-type semiconductor 116 have the same thickness.
The heat dissipation end 106 comprises a hot end ceramic sheet 120 attached to the backing 200 by a biocompatible adhesive provided on the backing, a hot end heat transfer element 121 provided on one side of the hot end ceramic sheet 120 away from the backing 200, and a hot end metal conductor 122 provided on the other side of the hot end heat transfer element 121. A hot side metal conductor 122 is disposed on the N-type semiconductor 115 and the P-type semiconductor 116. The hot side metal conductor 122 is supported by the N-type semiconductor 115 and the P-type semiconductor 116. The N-type semiconductor 115 is sandwiched between a hot side metal conductor 122 and a cold side metal conductor 119. The P-type semiconductor 116 is sandwiched between a hot side metal conductor 122 and another cold side metal conductor 119. That is, one end of the N-type semiconductor 115 is abutted against the corresponding cold-end metal conductor 119, and the other end is abutted against the corresponding portion of the hot-end metal conductor 122. One end of the P-type semiconductor 116 is abutted against the other cold end metal conductor 119, and the other end is abutted against the corresponding part of the hot end metal conductor 122. The N-type semiconductor 115 and the P-type semiconductor 116 are connected by a hot side metal conductor 122.
The hot side ceramic wafer 120 is in the form of a circular sheet having substantially the same dimensions as the cold side ceramic wafer 117. The hot side ceramic sheet 120 is sandwiched between the backing 200 and the hot side heat transfer element 121. The hot side heat transfer element 121 is sandwiched between the hot side ceramic plate 120 and the hot side metal conductor 122. The hot side heat transfer member 121 is provided in a circular sheet shape, and its size is slightly smaller than that of the hot side ceramic sheet 120. The hot side heat transfer elements 121 are approximately the same size as the cold side heat transfer elements 118. The hot side heat transfer element 121 groups hot side metal conductors 122 on the hot side ceramic wafer 120. A receiving space (not numbered) is formed by recessing a side of the hot side heat transfer element 121 away from the hot side ceramic wafer 120 from bottom to top for receiving the hot side metal conductor 122. The hot side heat transfer member 121 is made of a heat transfer non-conductive material. The hot side heat transfer member 121 may be a thermally conductive silicone. The hot side metal conductor 122 protrudes from the cold side heat conductive member 118 and is connected to one end of the N-type semiconductor 115 and one end of the P-type semiconductor 116. The hot side metal conductors 122 are made of the same material as the cold side metal conductors 119. Both the hot side metal conductors 122 and the cold side metal conductors 119 are made of copper.
The semiconductor refrigerator 104 also seals the cold side metal conductor 119, the N-type semiconductor 115, the P-type semiconductor 116 and the hot side metal conductor 122, which are sandwiched between the hot side heat transfer element 121 of the heat dissipation side 106 and the cold side heat transfer element 118 of the refrigeration side 105, by the sealant 124, so as to prevent water vapor generated when the refrigeration side 105 exchanges heat with the heat dissipation side 106 from entering the semiconductor refrigerator 104 or entering between the semiconductor refrigerator 104 and the flexible circuit 102 to cause short circuits inside the semiconductor refrigerator 104 and between the bonding pad 123 of the semiconductor refrigerator 104 and a welding part (not shown) of the flexible circuit 102. The semiconductor refrigerator 104 is connected with the corresponding conductive trace (not numbered) of the cold end heat conducting piece 118 through the two conductive traces (not numbered) respectively connected with the positive electrode bonding pad 123A and the negative electrode bonding pad 123B of the cold end ceramic piece 117, the conductive trace (not numbered) of the cold end heat conducting piece 118 is respectively contacted with one end of the two cold end metal conductors 119 arranged on the cold end heat conducting piece 118, the other end of the two cold end metal conductors 119 is respectively contacted with one end of the N-type semiconductor 115 and one end of the P-type semiconductor 116, and the other end of the N-type semiconductor 115 and the other end of the P-type semiconductor 116 are respectively contacted with the hot end metal conductor 122 arranged on the hot end heat conducting piece 121, so that the electric conduction between the positive electrode bonding pad 123A and the negative electrode bonding pad 123B of the cold end ceramic piece 117 is realized. The semiconductor refrigerator 104 is electrically connected to the flexible circuit 102 by welding the positive electrode pad 123A of the cold end ceramic sheet 117 to the welding portion 108A of the main body 110 of the flexible circuit 102 and welding the negative electrode pad 123B of the cold end ceramic sheet 117 to the welding portion 108B of the main body 110 of the flexible circuit 102, and further, a control signal from a signal controller (not shown) is received by the flexible circuit 102.
The semiconductor refrigerator 104 is fabricated using the peltier effect of semiconductors. When a great amount of heat is accumulated on the body surface of the tumor part of the patient, which is attached with the electrode sheet 10, the tumor treatment system containing the electrode sheet 10 inputs direct current to the semiconductor refrigerator 104 through the flexible circuit 102, and the internal loop current of the semiconductor refrigerator 104 flows from the positive electrode pad 123A of the cold end ceramic sheet 117 to the cold end metal conductor 119, the N-type semiconductor 115, the hot end metal conductor 122, the P-type semiconductor 116 which are electrically connected with the positive electrode pad 123A of the cold end ceramic sheet 117, and the conductive trace of the cold end metal conductor 119 which is electrically connected with the P-type semiconductor 116 and the conductive trace of the cold end heat conductive member 118 which is electrically connected with the negative electrode pad 123B of the cold end ceramic sheet 117 to the negative electrode pad 123B of the cold end ceramic sheet 117 sequentially through the cold end heat conductive member 118.
Electrons of the P-type semiconductor 116 of the semiconductor refrigerator 104 pass through the cold side metal conductor 119 in contact with the P-type semiconductor 116, the conductive trace of the cold side heat conductive member 118 and the cold side ceramic sheet 117, the cold side metal conductor 119 in contact with the N-type semiconductor 115, and the hot side metal conductor 122 to the P-type semiconductor 116 in order. At the cold end 105 of the semiconductor refrigerator 104, the charge from the low energy level to the high energy level removes heat from the environment as electrons flow from the P-type semiconductor 116 through the cold end ceramic plate 117 to the N-type semiconductor 115. At the heat sink 106 of the semiconductor refrigerator 104, the charge is moved from the high-level to the low-level position as electrons flow from the N-type semiconductor 115 to the P-type semiconductor 116 through the hot-side metal conductor 122, which dissipates heat. That is, when direct current is input to the semiconductor refrigerator 104 through the flexible circuit 102, the temperature of the cooling end 105 of the semiconductor refrigerator 104 is reduced, and heat is actively absorbed from the flexible circuit 102 through the cold end ceramic sheet 117, and the temperature of the heat dissipation end 106 is increased, and heat is dissipated through heat exchange between the hot end ceramic sheet 120 and the outside air. The heat absorbed by the cold-end ceramic sheet 117 is transferred to the outside of the electrode sheet 10 through the cold-end heat conducting piece 118, the cold-end metal conductor 119, the N-type semiconductor 115, the P-type semiconductor 116, the hot-end metal conductor 122, the hot-end heat conducting piece 121 and the hot-end ceramic sheet 120, so that the low-temperature scalding of the surface skin of a patient caused by heat accumulation when the patient is attached to the surface skin of the electrode sheet 10 during the tumor electric field treatment for a long time and continuously is avoided, the low-temperature scalding of the surface skin of the patient is avoided without stopping the treatment, and the patient has longer tumor treatment time.
The support 300 is disposed on the body portion 110 of the flexible circuit 102 in a pattern surrounding the dielectric element 103 and is adhered to the backing 200 by a biocompatible adhesive on the backing 200. The support 300 is generally hollow and annular in shape, having an opening 301 disposed therethrough for the dielectric element 103 to pass through. The thickness of the support 300 is substantially the same as the thickness of the dielectric element 103. The plane of the top end of the support 300 is at the same vertical level as the surface of the dielectric element 103 facing the patient's body surface, i.e. the surface of the support 300 on the side closer to the patient's body surface is coplanar with the surface of the dielectric element 103 on the side closer to the patient's body surface. The opening 301 is arranged in a circle having a diameter substantially the same as the diameter of the dielectric element 103. The opening 301 is used to house the dielectric element 103 after the electrode sheet 10 is assembled.
The support 300 and the dielectric element 103 are both disposed on the same side of the flexible circuit 102. The support 300 and the semiconductor refrigerator 104 are located on opposite sides of the flexible circuit 102, respectively. The supporting member 300 is in a sheet shape, and can be made of Polyethylene (PE) material or an insulating material which is made of PET material or a heat-conducting silica gel sheet or is formed by compounding polyurethane, polyethylene, a dispersing agent, a flame retardant, carbon fiber and the like, has stable chemical property, light weight, is not easy to deform and is nontoxic. The supporting piece 300 is disposed around the dielectric element 103, and is used for positioning and supporting the adhesive piece 400, so that the dielectric element 103 can be tightly attached to the corresponding body surface of the tumor part of the patient, the dielectric element 103 and the corresponding body surface of the tumor part of the patient have a larger attaching area, and meanwhile, the wearing comfort of the electrode slice 10 can be improved. The flexible circuit 102 is sandwiched between the support 300 and the semiconductor refrigerator 104. The support 300 in this embodiment may be a flexible foam. The side of the support 300 adjacent to the patient's body surface is attached to the attachment 400, and the side of the support 300 remote from the patient's body surface is attached to the backing 200 by a biocompatible adhesive disposed on the backing 200.
The adhesive member 400 is provided in a sheet shape, and one side thereof is attached to the support member 300 and one side of the dielectric element 103 close to the body surface of the patient. The other side of the adhesive 400 is adapted to engage the patient's body surface when the electrode sheet 10 is in use to closely engage the dielectric element 103 of the electrode sheet 10 to the patient's tumor counterpart. The adhesive member 400 is a conductive hydrogel, which can enhance the comfort of the dielectric element 103 of the electrode sheet 10 and the patient's body surface, and can also be used as a conductive medium, so as to facilitate the application of the alternating current electric field passing through the dielectric element 103 to the tumor site of the patient. In this embodiment, the number of the adhesive members 400 is the same as the number of the supporting members 300.
Comparing the temperature rise speed of the skin surface of a patient under the conditions that the applied electric field is the same, the application position of the electrode sheet is the same and the treatment time is the same, the active heat absorption electrode sheet 10 adopting the semiconductor refrigerator 104 of the utility model and the electrode sheet adopting the epoxy glass cloth laminated board with the same size and the same size as the semiconductor refrigerator 104 show that: the skin surface temperature rise rate of the electrode sheet using the epoxy-glass laminated sheet was about 0.0223 deg.c/s (temperature test range was 36.5 deg.c to 39 deg.c), whereas the skin surface temperature rise rate of the electrode sheet 10 using the present utility model was about 0.0108 deg.c/s (temperature test range was 36.5 deg.c to 39 deg.c). The rate of temperature rise of the electrode sheet using the semiconductor refrigerator 104 was reduced by about 51.5% during actual use as compared to the electrode sheet using the epoxy glass cloth laminate.
Through the above test verification, the tumor electric field treatment system of the present utility model sets the semiconductor refrigerator 104 at the side of the main body 110 of the flexible circuit 102 of the electrode sheet 10 far away from the patient's body surface, so that after the tumor treatment system controller (not shown) inputs direct current to the semiconductor refrigerator 104 through the flexible circuit 102, the refrigeration end 105 of the semiconductor refrigerator 104 can actively refrigerate, absorb the heat generated by long-time and continuous tumor electric field treatment and transferred to the flexible circuit 102 through the adhesive piece 400 and the dielectric element 103, and transfer the heat out of the electrode sheet 10 through the heat dissipation end 106, so as to quickly dissipate the heat at the tumor body surface of the patient to achieve the goal of cooling, and simultaneously, the patient can have relatively long treatment time, without reducing the alternating voltage applied to the flexible circuit 102 or the alternating voltage applied to the tumor site of the patient through the dielectric element 103, so as to avoid the skin on the body surface at the position where the patient applies the electrode sheet to scald.
The backing 200 of the electrode sheet 10 of the tumor electric field treatment system of the present utility model may further have openings (not shown) at positions corresponding to the hot-end ceramic sheet 120 of the semiconductor refrigerator 104, so that the hot-end ceramic sheet 120 of the semiconductor refrigerator 104 is exposed to air, thereby further improving the heat dissipation effect. According to sample size temperature test data of different human body parts corresponding to different indications, the semiconductor refrigerator 104 can be welded on the electrode plate unit 101 only in the region with higher temperature, so that the overall weight of the electrode plate 10 is reduced.
A signal controller (not shown) of the tumor electric field therapy system of the present utility model detects the temperature of the adhesive sheet 400 in contact with the body surface of the tumor site of the patient by means of the temperature sensor 113 provided on the flexible circuit 102 of the electrode sheet 10, and further determines whether or not to input direct current to the semiconductor refrigerator 104 via the flexible circuit 102. When the body surface skin temperature at the position of the applied electrode plate is detected to exceed a preset value, the tumor electric field treatment system controls the semiconductor refrigerator 104 of the electrode plate 10 to be in an on state through a signal controller (not shown), otherwise, controls the semiconductor refrigerator 104 of the electrode plate 10 to be in an off state. The semiconductor refrigerator 104 is turned on by the flexible circuit 102 inputting direct current to the semiconductor refrigerator 104.
The foregoing description of the preferred embodiments of the utility model is not intended to be limiting, but rather to enable any modification, equivalent replacement, improvement or the like to be made within the spirit and principles of the utility model.

Claims (25)

1. A tumor electric field therapy system, comprising: the utility model provides a tumor electric field treatment alternating current signal's AC signal generator, with AC signal generator electric connection's signal controller and pass through signal controller and apply the electrode slice of patient's tumor position with the alternating current signal of tumor electric field treatment that AC signal generator generated, the electrode slice includes a plurality of electrode units that the interval set up and the flexible circuit of electric connection each electrode unit, each electrode unit has with flexible circuit corresponding position electric connection and apply the dielectric element of alternating electric field to patient's tumor position, its characterized in that: each electrode unit is also provided with a semiconductor refrigerator welded with the corresponding part of the flexible circuit, and the semiconductor refrigerators are arranged opposite to the dielectric element and are respectively positioned at two opposite sides of the flexible circuit.
2. The oncological electric field therapy system of claim 1, wherein: the flexible circuit is characterized in that a conductive part electrically connected with the dielectric element is arranged on one side surface of the flexible circuit, and a welding part welded with the semiconductor refrigerator is arranged on the other side surface of the flexible circuit opposite to the conductive part.
3. The oncological electric field therapy system of claim 2, wherein: part of the electrode units are also provided with a temperature sensor electrically connected with the flexible circuit.
4. The oncological electric field therapy system of claim 3, wherein: the temperature sensor is located on the same side of the flexible circuit as the dielectric element.
5. The oncological electric field therapy system of claim 3, wherein: the dielectric element has a through hole disposed therethrough for receiving the temperature sensor.
6. The oncological electric field therapy system according to any one of claims 3-5, wherein: the semiconductor refrigerator is fabricated using the peltier effect of a semiconductor and includes a refrigeration side disposed adjacent to the dielectric element and a heat dissipation side disposed opposite the refrigeration side.
7. The oncological electric field therapy system of claim 6, wherein: the semiconductor refrigerator further comprises an N-type semiconductor and a P-type semiconductor which are clamped at the refrigerating end and the radiating end, and the N-type semiconductor and the P-type semiconductor are arranged side by side at intervals.
8. The oncological electric field therapy system of claim 7, wherein: the semiconductor refrigerator further includes a sealant filled between the refrigeration side and the heat dissipation side to seal the N-type semiconductor and the P-type semiconductor.
9. The oncological electric field therapy system of claim 7, wherein: the refrigerating end of the semiconductor refrigerator comprises a cold end ceramic plate arranged on one side of the flexible circuit, a cold end heat conducting piece arranged on the cold end ceramic plate, and two cold end metal conductors arranged on the cold end heat conducting piece at intervals, wherein the cold end ceramic plate is provided with a welding pad corresponding to a welding part of the flexible circuit.
10. The oncological electric field therapy system of claim 9, wherein: one of the two cold end ceramic plates is contacted with one end of the N-type semiconductor, and the other one is contacted with one end of the P-type semiconductor.
11. The oncological electric field therapy system of claim 10, wherein: the heat dissipation end of the semiconductor refrigerator comprises a hot end ceramic plate far away from the flexible circuit, a hot end heat transfer element arranged on one side of the hot end ceramic plate close to the refrigerating end and a hot end metal conductor in contact with the hot end heat transfer element, wherein the hot end heat transfer element is clamped between the hot end ceramic plate and the hot end metal conductor.
12. The oncological electric field therapy system of claim 11, wherein: and the hot end metal conductor is simultaneously contacted with the other end of the N-type semiconductor and the other end of the P-type semiconductor.
13. The oncological electric field therapy system of claim 11, wherein: the N-type semiconductor and the P-type semiconductor are arranged between the cold end metal conductor of the refrigerating end and the hot end metal conductor of the radiating end in a side-by-side and spaced mode.
14. The oncological electric field therapy system of claim 9, wherein: the flexible circuit comprises a plurality of main body parts arranged at intervals and connecting parts electrically connected with the adjacent main body parts, and the main body parts of the flexible circuit are clamped between the dielectric element and the semiconductor refrigerator.
15. The oncological electric field therapy system of claim 14, wherein: the dielectric element is arranged on one side of the main body of the flexible circuit facing the tumor part of the patient, and the semiconductor refrigerator is arranged on one side of the main body of the flexible circuit away from the tumor part of the patient.
16. The oncological electric field therapy system of claim 15, wherein: the temperature sensor is arranged on one side of the main body of the flexible circuit, which faces to the tumor part of the patient.
17. An electrode plate of a tumor electric field treatment system configured at a tumor corresponding position of a patient, comprising a plurality of electrode units arranged at intervals and a flexible circuit electrically connected with the electrode units, wherein each electrode unit is provided with a dielectric element electrically connected with the corresponding position of the flexible circuit and applying an alternating electric field to the tumor position of the patient, and the electrode plate is characterized in that: each electrode unit is also provided with a semiconductor refrigerator welded with the corresponding part of the flexible circuit, and the semiconductor refrigerators are arranged opposite to the dielectric element and are respectively positioned at two opposite sides of the flexible circuit.
18. The electrode pad of the oncological electric field therapy system of claim 17, wherein: part of the electrode units are also provided with a temperature sensor electrically connected with the flexible circuit.
19. The electrode pad of the oncological electric field therapy system of claim 18, wherein: the dielectric element is provided with a through hole which is arranged in a penetrating way, and the temperature sensor is accommodated in the through hole.
20. The electrode pad of the oncological electric field therapy system of claim 18 or 19, wherein: the semiconductor refrigerator is fabricated using the peltier effect of a semiconductor and includes a refrigeration side disposed adjacent to the dielectric element and a heat dissipation side disposed opposite the refrigeration side.
21. The electrode pad of the oncological electric field therapy system of claim 20, wherein: the semiconductor refrigerator further comprises an N-type semiconductor and a P-type semiconductor which are clamped at the refrigerating end and the radiating end, and the N-type semiconductor and the P-type semiconductor are arranged side by side at intervals.
22. The electrode pad of the oncological electric field therapy system of claim 21, wherein: the semiconductor refrigerator further includes a sealant filled between the refrigeration side and the heat dissipation side to seal the N-type semiconductor and the P-type semiconductor.
23. The electrode pad of the oncological electric field therapy system of claim 22, wherein: the refrigerating end of the semiconductor refrigerator comprises a cold end ceramic plate arranged on one side of the flexible circuit, a cold end heat conducting piece arranged on the cold end ceramic plate, and two cold end metal conductors arranged on the cold end heat conducting piece at intervals, wherein the cold end ceramic plate is provided with a bonding pad welded with the flexible circuit.
24. The electrode pad of the oncological electric field therapy system of claim 23, wherein: the heat dissipation end of the semiconductor refrigerator comprises a hot end ceramic plate far away from the flexible circuit, a hot end heat transfer element arranged on one side of the hot end ceramic plate close to the refrigerating end and a hot end metal conductor in contact with the hot end heat transfer element, wherein the hot end heat transfer element is clamped between the hot end ceramic plate and the hot end metal conductor.
25. The electrode pad of the oncological electric field therapy system of claim 24, wherein: the N-type semiconductor and the P-type semiconductor are arranged side by side and are clamped between the cold end metal conductor of the refrigerating end and the hot end metal conductor of the radiating end at intervals.
CN202122366025.1U 2021-09-28 2021-09-28 Tumor electric field treatment system and electrode slice thereof Active CN219921857U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202122366025.1U CN219921857U (en) 2021-09-28 2021-09-28 Tumor electric field treatment system and electrode slice thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202122366025.1U CN219921857U (en) 2021-09-28 2021-09-28 Tumor electric field treatment system and electrode slice thereof

Publications (1)

Publication Number Publication Date
CN219921857U true CN219921857U (en) 2023-10-31

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