CN219917189U - TOPCON solar cell - Google Patents
TOPCON solar cell Download PDFInfo
- Publication number
- CN219917189U CN219917189U CN202321637459.3U CN202321637459U CN219917189U CN 219917189 U CN219917189 U CN 219917189U CN 202321637459 U CN202321637459 U CN 202321637459U CN 219917189 U CN219917189 U CN 219917189U
- Authority
- CN
- China
- Prior art keywords
- layer
- film layer
- passivation film
- solar cell
- silicon substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002161 passivation Methods 0.000 claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052796 boron Inorganic materials 0.000 claims abstract description 11
- 230000005641 tunneling Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 97
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical group [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000002356 single layer Substances 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 10
- 238000010521 absorption reaction Methods 0.000 abstract description 6
- 230000003071 parasitic effect Effects 0.000 abstract description 6
- 239000000969 carrier Substances 0.000 abstract description 5
- 230000003287 optical effect Effects 0.000 abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 229920005591 polysilicon Polymers 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000003513 alkali Substances 0.000 description 6
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000005922 Phosphane Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910000064 phosphane Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a TOPCON solar cell which comprises a silicon substrate, wherein a boron emitter layer, a first passivation film layer, a second passivation film layer and a front metal electrode are sequentially arranged on the front surface of the silicon substrate upwards, and a tunneling oxide layer, a doping layer, a second passivation film layer and a back metal electrode are sequentially arranged on the back surface of the silicon substrate downwards. According to the TOPCON solar cell, the second passivation film layers are arranged on the front side and the back side of the silicon substrate to replace the traditional silicon nitride film layer, so that the transverse transmission resistance can be effectively reduced; in addition, the doped layer is used for replacing the traditional polysilicon layer, and the doped layer has a wider energy band gap, so that the selectivity of collecting the carriers is improved, the parasitic absorption loss of the light on the back of the battery is reduced, the optical performance of the battery is improved, the carrier transmission is enhanced, and the passivation quality of the back of the battery is effectively improved.
Description
Technical Field
The utility model belongs to the technical field of photovoltaic modules, and particularly relates to a TOPCON solar cell.
Background
With the continuous development of solar cell technology, more and more photovoltaic manufacturers are now beginning to lay out TOPCon cell technology. In the conventional TOPCO solar cell, a tunneling oxide layer and a polysilicon layer structure are adopted on the back for passivation contact, and the structure can enable majority carriers to penetrate through the oxide layer and has a blocking effect on minority carriers, so that the selectivity of carriers is realized, and the surface recombination and metal recombination of the cell are reduced. However, the polysilicon layer has smaller band gap and stronger parasitic absorption to light, which limits the further improvement of TOPCon cell efficiency to some extent.
Disclosure of Invention
In view of the above, in order to overcome the defects existing in the prior art, the present utility model aims to provide a TOPCon solar cell, on one hand, the parasitic absorption loss of the back light of the cell can be reduced, the optical performance of the cell can be improved, the carrier transmission can be enhanced, and the passivation quality of the back surface can be effectively improved; on the other hand, the transverse transmission resistance can be effectively reduced, so that the battery efficiency is improved.
In order to achieve the above purpose, the present utility model adopts the following technical scheme:
the utility model aims to provide a TOPCon solar cell which comprises a silicon substrate, wherein a boron emitter layer, a first passivation film layer, a second passivation film layer and a front metal electrode are sequentially arranged on the front surface of the silicon substrate upwards, and a tunneling oxide layer, a doping layer, a second passivation film layer and a back metal electrode are sequentially arranged on the back surface of the silicon substrate downwards.
According to some preferred embodiments of the present utility model, the silicon substrate is N-type, and an oxide film layer is further disposed between the doped layer and the second passivation film layer on the back surface of the silicon substrate.
According to some preferred embodiments of the utility model, the second passivation film layer is an indium tin oxide layer, the doped layer is a phosphorus doped nanocrystalline silicon oxide layer, and the oxide film layer is a silicon oxide layer. The second passivation film layers made of indium tin oxide are arranged on the front side and the back side of the battery to replace the silicon nitride film layers on the front side and the back side of the traditional battery, and the indium tin oxide film has the advantages of uniform thickness, easiness in control, good film repeatability and good stability; in addition, the indium tin oxide has better conductivity and can effectively reduce the transverse transmission resistance. In addition, the phosphorus doped nano-crystalline silicon oxide layer is used for replacing the traditional polycrystalline silicon layer, and the phosphorus doped nano-crystalline silicon oxide layer has a wider energy band gap, so that the selectivity of carrier collection is improved, the parasitic absorption loss of light on the back of the battery is reduced, the optical performance of the battery is improved, the carrier transmission is enhanced, and the passivation quality of the back of the battery is effectively improved.
According to some preferred embodiments of the present utility model, the thickness of the second passivation film layer on the front surface of the silicon substrate is 90 to 110nm, and the thickness of the second passivation film layer on the back surface of the silicon substrate is 120 to 140nm. In some embodiments of the present utility model, the second passivation film layer is deposited by magnetron sputtering.
According to some preferred embodiments of the utility model, the second passivation film layer is a single layer or a plurality of layers.
According to some preferred embodiments of the utility model, the doped layer is a single layer or a plurality of layers, and the thickness of the doped layer is 30-150 nm. In some embodiments of the present utility model, the doped layer is prepared by PECVD, and the reaction gas is a mixed gas of phosphane, silane, hydrogen and carbon dioxide, wherein the flow rate of silane is 2.5-5.0 sccm, the flow rate of hydrogen is 300-600 sccm, the flow rate of carbon dioxide is 1.3-4.0 sccm, and the flow rate of phosphane is 0.05-0.12 sccm.
According to some preferred embodiments of the utility model, the oxide film layer has a thickness of 3 to 7nm. The oxide film layer is used for reducing magnetron sputtering damage during indium tin oxide plating so as to ensure passivation effect.
According to some preferred embodiments of the utility model, the first passivation film layer is an alumina layer, and the thickness of the first passivation film layer is 10-20 nm.
According to some preferred embodiments of the utility model, the junction depth of the boron emitter layer is 0.7-1.3 μm.
According to some preferred embodiments of the utility model, the tunnel oxide layer has a thickness of 1-3 nm.
According to some preferred embodiments of the utility model, the front metal electrode and the back metal electrode are both silver electrodes.
Compared with the prior art, the utility model has the following advantages: according to the TOPCON solar cell, the second passivation film layers are arranged on the front side and the back side of the silicon substrate to replace the traditional silicon nitride film layer, so that the transverse transmission resistance can be effectively reduced; in addition, the doped layer is used for replacing the traditional polysilicon layer, and the doped layer has a wider energy band gap, so that the selectivity of collecting the carriers is improved, the parasitic absorption loss of the light on the back of the battery is reduced, the optical performance of the battery is improved, the carrier transmission is enhanced, and the passivation quality of the back of the battery is effectively improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a TOPCon solar cell in a preferred embodiment of the present utility model;
wherein, the reference numerals include: the semiconductor device comprises a silicon substrate-1, a boron emitter layer-2, a first passivation film layer-3, a second passivation film layer-4, a tunneling oxide layer-5, a doped layer-6, an oxide film layer-7, a front metal electrode-8 and a back metal electrode-9.
Detailed Description
In order to make the technical solution of the present utility model better understood by those skilled in the art, the technical solution of the present utility model will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present utility model, and it is apparent that the described embodiments are only some embodiments of the present utility model, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.
Referring to fig. 1, a TOPCon solar cell in this embodiment includes an N-type silicon substrate 1 having a resistivity of 1.0 Ω·cm, a dimension of 210mm×210mm, and a thickness of 140 μm. The front surface of the silicon substrate 1 is sequentially provided with a boron emitter layer 2, a first passivation film layer 3, a second passivation film layer 4 and a front surface metal electrode 8 upwards; the back of the silicon substrate 1 is provided with a tunneling oxide layer 5, a doped layer 6, an oxide film layer 7, a second passivation film layer 4 and a back metal electrode 9 in sequence downwards.
Specifically, in the present embodiment, the junction depth of the boron emitter layer 2 is 1 μm on the front surface of the silicon substrate 1; the first passivation film layer 3 is an alumina layer with the thickness of 15nm; the second passivation film layer 4 is an indium tin oxide layer, which is provided as a single layer and has a thickness of 110nm; the front metal electrode 8 is a silver electrode.
Specifically, in the present embodiment, the thickness of the tunnel oxide layer 5 is 2nm on the back surface of the silicon substrate 1; the doped layer 6 is a phosphorus doped nano-crystalline silicon oxide layer, is arranged as a single layer and has a thickness of 90nm, and the phosphorus doped nano-crystalline silicon oxide has a wider energy band gap, so that the selectivity of carrier collection is improved, the parasitic absorption loss of light on the back of the battery is reduced, the optical performance of the battery is improved, the carrier transmission is enhanced, and the passivation quality of the back is effectively improved. In addition, the oxide film layer 7 is a silicon oxide layer with a thickness of 5nm, and the arrangement of the oxide film layer 7 in this embodiment is used to reduce magnetron sputtering damage during indium tin oxide plating so as to ensure the passivation effect of the battery. In addition, the second passivation film layer 4 on the back is also a single layer and has a thickness of 130nm; the back metal electrode 9 is a silver electrode.
In this embodiment, the front and back surfaces of the silicon substrate 1 are both provided with the second passivation film layer 4, which has the advantages of uniform thickness, easy control, good film repeatability, good stability, and good conductivity of indium tin oxide, and can effectively reduce the transverse transmission resistance. In this embodiment, the silicon substrate 1 is preferably a silicon wafer.
The preparation method of the TOPCon solar cell of this example is as follows:
(1) And (3) texturing the silicon wafer by using an alkali solution and a texturing additive, wherein the thickness of one side of the silicon wafer is reduced to 1.5-3.0 mu m.
(2) And (3) putting the silicon wafer into a low-pressure diffusion furnace to diffuse boron on the front surface of the silicon wafer, using boron trichloride or boron tribromide as a diffusion boron source, and simultaneously introducing nitrogen and oxygen as reaction gases. Wherein the flow of the boron source is 80-700 sccm, the flow of nitrogen is 1500-12000 sccm, and the flow of oxygen is 800-6000sccm.
(3) Alkali polishing is carried out on the back surface of the silicon wafer body by using alkali solution and matching with additives, and the weight of the silicon wafer after alkali polishing is reduced by 0.13-0.35g; the alkali solution is sodium hydroxide or potassium hydroxide.
(4) Depositing a tunneling oxide layer 5 and a doped layer 6 on the back surface of the silicon wafer by using PECVD equipment; and then annealing the back surface of the silicon wafer by using a tube furnace, wherein the annealing temperature is 850-1000 ℃, the annealing time is 40-70 minutes, the gas is nitrogen, and the flow is 5000-8000 sccm.
(5) And cleaning the front and back surfaces of the silicon wafer by using an acid solution and an alkali solution.
(6) Annealing is carried out by using a tube furnace, an oxide film layer 7 is formed on the back surface of the silicon wafer, specifically, oxygen and nitrogen are introduced as reaction gases, and the reaction temperature is controlled to be 600-700 ℃.
(7) A first passivation film layer 3 is deposited on the front side of the wafer using an ALD apparatus.
(8) A second passivation film layer 4 is deposited on the back and the front of the silicon wafer in a magnetron sputtering mode, the target material is an indium tin oxide ceramic target, and the mass ratio of indium oxide to tin oxide is 9-10: 1, the temperature is 150-250 ℃.
(9) Printing a metal electrode on the back of the silicon wafer by screen printing to form a back metal electrode 9; and printing a metal electrode on the front side of the silicon wafer to form a front side metal electrode 8. Finally, by light injection (light intensity 6000-13000W/m) 2 The TOPCO solar cell was obtained by treating the cells at a temperature of 30 to 80 ℃.
The above embodiments are only for illustrating the technical concept and features of the present utility model, and are intended to enable those skilled in the art to understand the present utility model and to implement the same, but are not intended to limit the scope of the present utility model, and all equivalent changes or modifications made according to the spirit of the present utility model should be included in the scope of the present utility model.
Claims (10)
1. The TOPCON solar cell comprises a silicon substrate and is characterized in that a boron emitter layer, a first passivation film layer, a second passivation film layer and a front metal electrode are sequentially arranged on the front surface of the silicon substrate upwards, and a tunneling oxide layer, a doping layer, a second passivation film layer and a back metal electrode are sequentially arranged on the back surface of the silicon substrate downwards.
2. The TOPCon solar cell of claim 1, wherein the silicon substrate is N-type, and an oxide film layer is further disposed between the doped layer and the second passivation film layer on the back surface of the silicon substrate.
3. The TOPCon solar cell of claim 2 wherein the second passivation film layer is an indium tin oxide layer, the doped layer is a phosphorus doped nanocrystalline silicon oxide layer, and the oxide film layer is a silicon oxide layer.
4. The TOPCon solar cell of claim 2, wherein the thickness of the second passivation film layer on the front surface of the silicon substrate is 90-110 nm, and the thickness of the second passivation film layer on the back surface of the silicon substrate is 120-140 nm.
5. The TOPCon solar cell of claim 3 wherein the second passivation film layer is a single layer or multiple layers.
6. TOPCon solar cell according to claim 2, characterized in that the doped layer is a single layer or a plurality of layers, the doped layer having a thickness of 30-150 nm.
7. The TOPCon solar cell according to claim 2, wherein the thickness of the oxide film layer is 3-7 nm.
8. The TOPCon solar cell of claim 1, wherein the first passivation film layer is an aluminum oxide layer, and the thickness of the first passivation film layer is 10-20 nm.
9. TOPCon solar cell according to claim 1, characterized in that the junction depth of the boron emitter layer is 0.7-1.3 μm.
10. The TOPCon solar cell of claim 1 wherein the tunnel oxide layer has a thickness of 1-3 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321637459.3U CN219917189U (en) | 2023-06-26 | 2023-06-26 | TOPCON solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321637459.3U CN219917189U (en) | 2023-06-26 | 2023-06-26 | TOPCON solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219917189U true CN219917189U (en) | 2023-10-27 |
Family
ID=88431030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321637459.3U Active CN219917189U (en) | 2023-06-26 | 2023-06-26 | TOPCON solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219917189U (en) |
-
2023
- 2023-06-26 CN CN202321637459.3U patent/CN219917189U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU2021404856B2 (en) | High-efficiency silicon heterojunction solar cell and manufacturing method thereof | |
| WO2022012180A1 (en) | Interdigitated back contact heterojunction solar cell based on lpcvd efficient amorphous silicon doping technology | |
| CN202601629U (en) | Crystalline silicon solar cell | |
| CN111244230B (en) | Preparation method of back junction solar cell with passivated metal contact | |
| CN111509058A (en) | Heterojunction solar cell with amorphous silicon oxide film as intrinsic passivation layer | |
| CN115000246B (en) | P-type passivation contact battery preparation method and passivation contact battery | |
| CN218414591U (en) | Solar cell | |
| WO2023216628A1 (en) | Heterojunction solar cell, preparation method therefor and power generation device | |
| CN102044594A (en) | Technology for improving diffusion uniformity of crystalline silicon solar battery | |
| WO2022142007A1 (en) | Efficient heterojunction battery structure and preparation method therefor | |
| CN108922937B (en) | Boron doped emitter structure of HIT solar cell and preparation method | |
| WO2024066207A1 (en) | New solar cell and fabrication method therefor | |
| CN111416013A (en) | Heterojunction solar cell with hydrogenated amorphous silicon oxynitride film as passivation layer | |
| CN114497288A (en) | Manufacturing method of heterojunction solar cell with grid line embedded into selective heavily doped region | |
| CN114005888A (en) | Solar cell and preparation method thereof | |
| CN114050190B (en) | Double-sided passivation contact battery and preparation method thereof | |
| CN115692545A (en) | Method for improving doping concentration of polycrystalline silicon active phosphorus of N-type TOPCon battery in PECVD route | |
| CN113328011B (en) | Manufacturing device and method of passivated contact crystalline silicon solar cell | |
| CN114744054A (en) | TOPCon battery and preparation method thereof | |
| CN114823969A (en) | Low-temperature hydrogen plasma auxiliary annealing method for improving performance of passivation contact structure and TOPCon solar cell | |
| CN111416014B (en) | Passivated contact back junction silicon heterojunction solar cell and preparation method thereof | |
| WO2024060933A1 (en) | Solar cell and manufacturing method therefor | |
| CN113410334A (en) | Preparation method of multilayer thin film passivation contact structure and fully-passivated contact crystalline silicon solar cell | |
| CN219917189U (en) | TOPCON solar cell | |
| CN114725239B (en) | Preparation method of heterojunction battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |