CN219890584U - Silicon APD single photon detection system capable of reducing dark count - Google Patents
Silicon APD single photon detection system capable of reducing dark count Download PDFInfo
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- CN219890584U CN219890584U CN202222563362.4U CN202222563362U CN219890584U CN 219890584 U CN219890584 U CN 219890584U CN 202222563362 U CN202222563362 U CN 202222563362U CN 219890584 U CN219890584 U CN 219890584U
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- 238000001514 detection method Methods 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 14
- 239000010703 silicon Substances 0.000 title claims abstract description 14
- 230000003287 optical effect Effects 0.000 claims abstract description 18
- 230000002159 abnormal effect Effects 0.000 claims abstract description 7
- 239000013307 optical fiber Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000001276 controlling effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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Abstract
The utility model discloses a silicon APD single photon detection system for reducing dark count, which comprises a laser, a Si-APD single photon detector group, a relay, a temperature high-voltage telemetry module, a temperature high-voltage modulation module and a singlechip. The laser drives the Si-APD single photon detector group through an optical signal, and the Si-APD single photon detector group (N > 2) is connected with the singlechip through the relay; the temperature high-voltage telemetry module, the temperature high-voltage modulation module and the singlechip form a closed loop; according to the utility model, the relay is switched by sending out pulses through the abnormal temperature of the Si-APD single photon detector, so that the linear mode and the Geiger mode of the Si-APD single photon detector are controlled to be switched, and the dark counting rate in the detection process is reduced; meanwhile, the voltage and the temperature of the Si-APD single photon detector group are monitored and controlled, and the single photon detection efficiency is improved.
Description
Technical Field
The utility model relates to the field of single photon detection, in particular to a silicon APD single photon detection system capable of reducing dark count.
Background
The single photon detection can detect the optical signal with the minimum energy, and has very important application in the fields of long-distance laser ranging, laser imaging, quantum communication and the like. The avalanche probability is used as one of determining factors of the detection efficiency of the current silicon APD single photon detector, and can be improved in a bias high voltage improving mode, so that the detection efficiency is improved, but dark counts are improved. Dark counts refer to photon misinterpretation counts generated by avalanche diodes due to thermally excited carriers initiating avalanches without external photon ingress. In the existing application, the mode of increasing the detection area of the single photon detector is often adopted to improve the efficiency of collecting photons, so that the coupling difficulty of an optical path is reduced, but the higher dark count caused by the larger detection area is unfavorable for improving the single photon detection efficiency.
Currently, in the application of satellite and ground light transmission, the dark count of a silicon APD single photon detector is continuously increased due to irradiation damage, and the dark count increasing rate is about 50 cps/day, so that the requirement of space quantum communication on the dark count of the single photon detector cannot be met.
Accordingly, there is a need to improve upon the deficiencies of the prior art by providing a silicon APD single photon detection system that reduces dark counts.
Disclosure of Invention
The utility model aims to overcome the defects of the prior art and provide a silicon APD single photon detection system for reducing dark counts in order to solve the problem of dark counts in a single photon detector.
The method is realized by the following technical scheme:
a silicon APD single photon detection system for reducing dark count comprises a laser, a Si-APD single photon detector group (N > 2), a relay, a temperature high-voltage telemetry module, a temperature high-voltage modulation module and a singlechip;
the laser is used for generating photon signals and driving the Si-APD single photon detector group through optical signals, the Si-APD single photon detector group is connected with the singlechip through the relay, an output pin of the Si-APD single photon detector group is connected with an input pin of the temperature high-voltage telemetry module, an output pin of the temperature high-voltage telemetry module is connected with an input pin of the singlechip, an output pin of the singlechip is connected with an input pin of the temperature high-voltage modulation module, and an output pin of the temperature high-voltage modulation module is connected with an input pin of the Si-APD single photon detector group;
the Si-APD single photon detector group at least comprises N Si-APD single photon detectors; the relay is used for controlling the Si-APD single photon detector group to switch between a Geiger mode and a linear mode;
when the working temperature of the Si-APD single photon detector group is in a normal range, the working modes of N Si-APD single photon detectors of the Si-APD single photon detector group are geiger modes;
when the working temperature of the Si-APD single photon detector group is abnormal, any N-2 Si-APD single photon detectors in the Si-APD single photon detector group are changed into a linear mode after being switched by the relay, and the rest 2 Si-APD single photon detectors are in a Geiger mode.
The Si-APD single photon detector group receives the optical signals sent by the laser, adopts an FC optical fiber interface to receive the optical signals, and focuses the light emitted by the FC optical fiber interface to the photosensitive area of the Si-APD through a lens.
The relay controls any N Si-APD single photon detectors to switch between a Geiger mode and a linear mode through pulse signals.
The switching time range of the relay is 1 ms-3 ms.
When the working mode of the Si-APD single photon detector is a linear mode, the Si-APD single photon detector converts an optical signal into an electric signal and inputs the electric signal into the singlechip through the digital-analog converter.
The digital-to-analog converter adopts an analog-to-digital converter.
The singlechip controls the temperature high-voltage modulation module to refrigerate or heat the Si-APD single photon detector through the electric signal.
The temperature sensor of the temperature high-voltage telemetry module inputs the acquired temperature data to the singlechip through an input pin of the singlechip, and the singlechip drives a TEC refrigerator in the temperature high-voltage modulation module to adjust the temperature of the Si-APD single photon detector.
The digital-analog converter in the temperature high-voltage modulation module is used for adjusting the initial high voltage generated by the temperature high-voltage modulation module, and the adjusting range of the initial high voltage is 2V-22V.
The beneficial effects of the utility model are as follows:
according to the utility model, the pulse is sent out through the abnormal temperature of the Si-APD single photon detectors, so that the relay is controlled to switch, any N-2 Si-APD single photon detectors are converted into a linear mode, the rest of any 2 Si-APD single photon detectors are still in a Geiger mode, namely the rest two Si-APD single photon detectors still receive photons, and the dark counting rate in the detection process is reduced.
Drawings
Fig. 1 is a system block diagram of the present utility model.
Detailed Description
The present utility model will be further described in detail with reference to the following examples, for the purpose of making the objects, technical solutions and advantages of the present utility model more apparent, but the scope of the present utility model is not limited to the following specific examples.
A silicon APD single photon detection system for reducing dark count is shown in figure 1, and comprises a laser, a Si-APD single photon detector group, a relay, a temperature high-voltage telemetry module, a temperature high-voltage modulation module and a singlechip;
the laser drives the Si-APD single photon detector group through an optical signal, the Si-APD single photon detector group is connected with the singlechip through the relay, an output pin of the Si-APD single photon detector group is connected with an input pin of the temperature high-voltage telemetry module, an output pin of the temperature high-voltage telemetry module is connected with an input pin of the singlechip, an output pin of the singlechip is connected with an input pin of the temperature high-voltage modulation module, and an output pin of the temperature high-voltage modulation module is connected with an input pin of the Si-APD single photon detector group;
the laser is used for generating an optical signal; the Si-APD single photon detector group receives the optical signals emitted by the laser, adopts a standard FC optical fiber interface to receive the optical signals, and focuses the light emitted by the FC optical fiber interface onto a photosensitive area of the Si-APD single photon detector group through a lens.
The Si-APD single photon detector group is used for determining the polarization state of photons through detection; wherein the polarization state of the photon comprises at least four states of |H >, |V >, |++, and|- >.
The Si-APD single photon detector group comprises at least ten (N=10) Si-APD single photon detectors;
when the working temperature of the Si-APD single photon detector group is normal, the working modes of ten Si-APD single photon detectors of the Si-APD single photon detector group are geiger modes;
when the working temperature of the Si-APD single photon detector group is abnormal, any eight Si-APD single photon detectors in the Si-APD single photon detector group are changed into a linear mode after being switched by the relay, and the other two Si-APD single photon detectors are in a Geiger mode. The Si-APD single photon detector with the linear working mode converts an optical signal into an electric signal and inputs the electric signal into the singlechip through the digital-to-analog converter. Further, the digital-to-analog converter is a controller for converting an analog signal into a digital signal, which is called ADC for short.
The relay is used for controlling the Si-APD single photon detector group to switch between a Geiger mode and a linear mode; the relay controls the ten Si-APD single photon detectors to switch between a Geiger mode and a linear mode through pulse signals, and the switching time range of the relay is 1 ms-3 ms, and the optimal value is 2ms.
The temperature high-voltage telemetry module is used for measuring the temperature and the voltage of the Si-APD single photon detector group; the temperature sensor of the temperature high-voltage telemetry module inputs the acquired temperature data to the singlechip through an input pin of the singlechip, and the model of the singlechip is STM32F103C8T6.
The temperature high-voltage modulation module is used for adjusting the temperature and the voltage of the Si-APD single photon detector group; the digital-analog converter in the temperature high-voltage modulation module regulates the initial high voltage generated by the temperature high-voltage modulation module, wherein the regulating range of the initial high voltage is 2V-22V, and the optimal value is 15V.
The singlechip is used for distinguishing the polarization state of photons and controlling the temperature of the Si-APD single photon detector group; the model of the temperature high-voltage modulation module is BH1620FVC-TR. When the Si-APD single photon detector with the linear working mode converts an optical signal into an electric signal, the electric signal is input into the singlechip through the digital-to-analog converter, and the singlechip controls the temperature high-voltage modulation module to refrigerate or heat the Si-APD single photon detector according to the received electric signal. Further, the singlechip adjusts the temperature of the Si-APD single photon detector by driving a TEC refrigerator in the temperature high-voltage modulation module.
The working principle of the system is as follows: the laser generates optical signals, the Si-APD single photon detector group starts to detect photons, and when the working temperature of the Si-APD single photon detector group is normal, the working modes of ten Si-APD single photon detectors of the Si-APD single photon detector group are geiger modes; when the working temperature of the Si-APD single photon detector group is abnormal, any eight Si-APD single photon detectors in the Si-APD single photon detector group are changed into a linear mode after being switched by the relay, and the other two Si-APD single photon detectors are in a Geiger mode; the two Si-APD single photon detectors still receive photons, so that miscounting during detection is reduced, namely dark counting of the single photon detectors is reduced;
during the working period of the Si-APD single photon detector group, the temperature sensor of the temperature high-voltage telemetry module inputs the acquired temperature data to the singlechip through an input pin of the singlechip, and the singlechip judges the received temperature data and controls the temperature high-voltage modulation module to refrigerate or heat the Si-APD single photon detector so as to regulate the temperature of the Si-APD single photon detector.
The system disclosed by the utility model sends out pulses through the abnormal temperature of the Si-APD single photon detectors so as to control the switching of the relay, so that eight Si-APD single photon detectors which are arbitrarily controllable are converted into a linear mode, the other two Si-APD single photon detectors are still in a Geiger mode, namely the other two Si-APD single photon detectors still receive photons, and the dark count rate in the detection process is reduced.
The system monitors and controls the voltage and the temperature of the Si-APD single photon detector group through a closed loop consisting of the temperature high-voltage telemetry module, the temperature high-voltage modulation module and the singlechip, accelerates the quenching and recovery speed of the avalanche diode in the Si-APD single photon detector, reduces the dark counting rate in the detection process and improves the detection efficiency of the Si-APD single photon detector.
Variations and modifications to the above would be obvious to persons skilled in the art to which the utility model pertains from the foregoing description and teachings. Therefore, the utility model is not limited to the specific embodiments disclosed and described above, but some modifications and changes of the utility model should be also included in the scope of the claims of the utility model. In addition, although specific terms are used in the present specification, these terms are for convenience of description only and do not constitute any limitation on the utility model.
Claims (9)
1. The silicon APD single photon detection system for reducing dark count is characterized by comprising a laser, an Si-APD single photon detector group, a relay, a temperature high-voltage telemetry module, a temperature high-voltage modulation module and a singlechip;
the laser is used for generating photon signals and driving the Si-APD single photon detector group through optical signals, the Si-APD single photon detector group is connected with the singlechip through the relay, an output pin of the Si-APD single photon detector group is connected with an input pin of the temperature high-voltage telemetry module, an output pin of the temperature high-voltage telemetry module is connected with an input pin of the singlechip, an output pin of the singlechip is connected with an input pin of the temperature high-voltage modulation module, and an output pin of the temperature high-voltage modulation module is connected with an input pin of the Si-APD single photon detector group;
the Si-APD single photon detector group at least comprises N (N > 2) integrated Si-APD single photon detectors; the relay is used for controlling the Si-APD single photon detector group to switch between a Geiger mode and a linear mode;
when the working temperature of the Si-APD single photon detector group is in a normal range, the working modes of N Si-APD single photon detectors of the Si-APD single photon detector group are geiger modes;
when the working temperature of the Si-APD single photon detector group is abnormal, any N-2 Si-APD single photon detectors in the Si-APD single photon detector group are changed into a linear mode after being switched by the relay, and the rest 2 Si-APD single photon detectors are in a Geiger mode.
2. The system of claim 1, wherein the Si-APD single photon detector group receives the optical signal from the laser, and the Si-APD single photon detector group receives the optical signal by using the FC optical fiber interface and focuses the light emitted from the FC optical fiber interface to the photosensitive region of the Si-APD through a lens.
3. The silicon APD single photon detection system for reducing dark counts according to claim 2, wherein the relay controls the ten Si-APD single photon detectors to switch between geiger mode and linear mode by pulse signals.
4. A silicon APD single photon detection system for reducing dark counts as in claim 3 wherein the relay has a switching time in the range of 1ms to 3ms.
5. The system of claim 4, wherein when the operation mode of the Si-APD single photon detector is a linear mode, the Si-APD single photon detector converts the optical signal into an electrical signal and inputs the electrical signal to the single chip microcomputer through the digital-to-analog converter.
6. A dark-count reducing silicon APD single photon detection system in accordance with claim 5 wherein said digital-to-analog converter is an analog-to-digital converter.
7. The system of claim 6, wherein the single-chip microcomputer controls the temperature high-voltage modulation module to refrigerate or heat the Si-APD single-photon detector through the electric signal.
8. The system of claim 1, wherein the temperature sensor of the temperature high-voltage telemetry module inputs the collected temperature data to the singlechip through an input pin of the singlechip, and the singlechip drives a TEC refrigerator in the temperature high-voltage modulation module to regulate the temperature of the Si-APD single photon detector.
9. The system of claim 1, wherein the digital-to-analog converter in the temperature high voltage modulation module regulates an initial high voltage generated by the temperature high voltage modulation module, and the regulation range of the initial high voltage is 2V-22V.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222563362.4U CN219890584U (en) | 2022-09-27 | 2022-09-27 | Silicon APD single photon detection system capable of reducing dark count |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222563362.4U CN219890584U (en) | 2022-09-27 | 2022-09-27 | Silicon APD single photon detection system capable of reducing dark count |
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| CN219890584U true CN219890584U (en) | 2023-10-24 |
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