CN218330283U - Silicon APD single photon detection system - Google Patents
Silicon APD single photon detection system Download PDFInfo
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- CN218330283U CN218330283U CN202222573969.0U CN202222573969U CN218330283U CN 218330283 U CN218330283 U CN 218330283U CN 202222573969 U CN202222573969 U CN 202222573969U CN 218330283 U CN218330283 U CN 218330283U
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Abstract
The utility model discloses a silicon APD single photon detection system, including laser instrument, si-APD single photon detector group, relay, temperature high pressure telemetering measurement module, temperature high pressure modulation module and singlechip. The laser drives the Si-APD single photon detector group through an optical signal, and the Si-APD single photon detector group is connected with the single chip microcomputer through the relay; a closed loop formed by the temperature high-pressure telemetering module, the temperature high-pressure modulation module and the singlechip; the utility model sends out pulse to switch the relay through the temperature abnormity of the Si-APD single photon detector, and further controls the linear mode and Geiger mode switching of the Si-APD single photon detector, thereby reducing the dark counting rate in the detection process; a closed loop formed by the temperature high-voltage telemetering module, the temperature high-voltage modulation module and the single chip microcomputer monitors and controls the voltage and the temperature of the detector group, and single photon detection efficiency is improved.
Description
Technical Field
The utility model relates to a single photon detection field, concretely relates to silicon APD single photon detection system.
Background
The single photon detection can detect the optical signal with the minimum energy, and has very important application in the fields of long-distance laser ranging, laser imaging, quantum communication and the like. The avalanche probability is one of the determining factors of the detection efficiency of the current silicon APD single photon detector, and the avalanche probability can be improved by improving the bias high voltage, so that the detection efficiency is improved, but the dark count can also be improved. Dark counts refer to false counts of photons generated by avalanche diodes due to thermally excited carrier induced avalanches without external photons entering. In the existing application, the efficiency of collecting photons is improved by increasing the detection area of the single-photon detector, so that the coupling difficulty of a light path is reduced, but higher dark count can be caused by a larger detection area, and the improvement of the single-photon detection efficiency is not facilitated.
In the application of the silicon APD single-photon detector in satellite and ground light transmission, the dark count can be continuously increased due to irradiation damage, and the increase rate of the dark count is about 50 cps/day, so that the requirement of space quantum communication on the dark count of the single-photon detector cannot be met.
Therefore, the shortcomings of the prior art need to be improved, and a silicon APD single photon detection system is provided.
SUMMERY OF THE UTILITY MODEL
The utility model aims at overcoming prior art's defect, in order to solve the dark count problem among the single photon detector, provide a silicon APD single photon detection system.
The utility model discloses the method realizes through following technical scheme:
a silicon APD single photon detection system comprises a laser, a Si-APD single photon detector group, a relay, a temperature high-voltage telemetering module, a temperature high-voltage modulation module and a single chip microcomputer;
the Si-APD single photon detector group at least comprises N (N > 2) Si-APD single photon detectors;
the laser is used for generating photon signals and driving the Si-APD single photon detector group through optical signals, the Si-APD single photon detector group is connected with the single chip microcomputer through the relay, an output pin of the Si-APD single photon detector group is connected with an input pin of the temperature and high voltage telemetering module, an output pin of the temperature and high voltage telemetering module is connected with an input pin of the single chip microcomputer, an output pin of the single chip microcomputer is connected with an input pin of the temperature and high voltage modulation module, and an output pin of the temperature and high voltage modulation module is connected with an input pin of the Si-APD single photon detector group;
the temperature and high-pressure telemetering module is used for collecting temperature data of the Si-APD single photon detector group and transmitting the collected temperature data to the single chip microcomputer, and the single chip microcomputer judges the received temperature data and controls the temperature and high-pressure modulation module to carry out temperature adjustment on the Si-APD single photon detector according to a judgment result.
Preferably, the Si-APD single photon detector group at least includes N (N > 2) Si-APD single photon detectors, and further, the Si-APD single photon detector group receives an optical signal emitted by the laser, and the Si-APD single photon detector group receives the optical signal by using the FC optical fiber interface and focuses the light emitted from the FC optical fiber interface to the light sensitive area of the Si-APD through a lens.
Furthermore, the relay controls the N Si-APD single photon detectors to switch between two working modes, namely a Geiger mode and a linear mode, through pulse signals.
Further, the switching time range of the relay is 1 ms-3 ms.
Further, when the working mode of the Si-APD single photon detector is a linear mode, the Si-APD single photon detector converts an optical signal into an electric signal and inputs the electric signal into the single chip microcomputer through the digital-to-analog converter.
Further, the digital-to-analog converter adopts an analog-to-digital converter.
Furthermore, the single chip microcomputer controls the temperature high-voltage modulation module to refrigerate or heat the Si-APD single photon detector through the electric signal.
Furthermore, the temperature sensor of the temperature high-voltage telemetry module inputs the acquired temperature data into the single-chip microcomputer through an input pin of the single-chip microcomputer, and the single-chip microcomputer drives the TEC refrigerator in the temperature high-voltage modulation module to adjust the temperature of the Si-APD single-photon detector.
Further, a digital-to-analog converter in the temperature high-voltage modulation module adjusts an initial high voltage generated by the temperature high-voltage modulation module, and the adjustment range of the initial high voltage is 2V-22V.
The utility model has the advantages that:
the utility model discloses a silicon APD single photon detection system of low dark count, the closed loop who constitutes through temperature high pressure remote measuring module, temperature high pressure modulation module and singlechip monitors and controls the voltage and the temperature of Si-APD single photon detector group for the quenching and the recovery rate of avalanche diode among the Si-APD single photon detector reduce the dark count rate among the detection process and improved Si-APD single photon detector's detection efficiency.
Drawings
Fig. 1 is a system block diagram of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments, but the scope of the present invention is not limited to the following specific embodiments.
A silicon APD single photon detection system is shown in figure 1 and comprises a laser, a Si-APD single photon detector group, a relay, a temperature high-voltage telemetering module, a temperature high-voltage modulation module and a single chip microcomputer;
the laser drives the Si-APD single photon detector group (N = 10) through an optical signal, the Si-APD single photon detector group is connected with the single chip microcomputer through the relay, an output pin of the Si-APD single photon detector group is connected with an input pin of the temperature and high voltage remote measurement module, an output pin of the temperature and high voltage remote measurement module is connected to an input pin of the single chip microcomputer, an output pin of the single chip microcomputer is connected with an input pin of the temperature and high voltage modulation module, and an output pin of the temperature and high voltage modulation module is connected with an input pin of the Si-APD single photon detector group;
the laser is used for generating an optical signal; the Si-APD single photon detector group receives optical signals sent by the laser, receives the optical signals by adopting a standard FC optical fiber interface, and focuses light emitted by the FC optical fiber interface to a light sensitive area of the Si-APD single photon detector group through a lens.
The Si-APD single photon detector group is used for determining the polarization state of photons through detection; the polarization state of the photon at least comprises | H >, | V >, | + > and | - > four states.
The Si-APD single photon detector group of the embodiment at least comprises ten Si-APD single photon detectors;
when the working temperature of the Si-APD single photon detector group is normal, the working mode of the ten Si-APD single photon detectors of the Si-APD single photon detector group is a Geiger mode;
when the working temperature of the Si-APD single photon detector group is abnormal, any eight Si-APD single photon detectors in the Si-APD single photon detector group are changed into a linear mode after being switched by the relay, and the other two Si-APD single photon detectors are in a Geiger mode. The Si-APD single photon detector with the linear working mode converts optical signals into electric signals and then inputs the electric signals into the single chip microcomputer through the digital-to-analog converter. Further, the digital-to-analog converter is a controller for converting an analog signal into a digital signal, and is abbreviated as ADC.
The relay is used for controlling the Si-APD single photon detector group to switch between a Geiger mode and a linear mode; the relay controls the ten Si-APD single photon detectors to switch between two working modes, namely a Geiger mode and a linear mode, through pulse signals, and the switching time range of the relay is 1-3 ms, and the preferred value is 2ms.
The temperature high-voltage telemetering module is used for measuring the temperature and the voltage of the Si-APD single photon detector group; the temperature data acquired by a temperature sensor of the temperature high-pressure telemetry module are input into a single chip microcomputer through an input pin of the single chip microcomputer, and the type of the single chip microcomputer is STM32F103C8T6.
The temperature high-voltage modulation module is used for adjusting the temperature and the voltage of the Si-APD single photon detector group; the digital-to-analog converter in the temperature high-voltage modulation module regulates the initial high voltage generated by the temperature high-voltage modulation module, the regulation range of the initial high voltage is 2V-22V, and the optimal value is 15V.
The single chip microcomputer is used for distinguishing the polarization state of photons and controlling the temperature of the Si-APD single photon detector group; the model of the temperature high-voltage modulation module is BH1620FVC-TR. When the working mode is the linear mode, the Si-APD single photon detector converts an optical signal into an electric signal and then inputs the electric signal into the single chip microcomputer through the digital-to-analog converter, and the single chip microcomputer controls the temperature high-pressure modulation module to refrigerate or heat the Si-APD single photon detector according to the received electric signal. Further, the single chip microcomputer drives a TEC refrigerator in the temperature high-voltage modulation module to adjust the temperature of the Si-APD single photon detector.
The working principle of the system is as follows: the laser generates an optical signal, the Si-APD single photon detector group starts to detect photons, and when the working temperature of the Si-APD single photon detector group is normal, the working mode of the ten Si-APD single photon detectors of the Si-APD single photon detector group is a Geiger mode; when the working temperature of the Si-APD single photon detector group is abnormal, eight Si-APD single photon detectors in the Si-APD single photon detector group are changed into a linear mode after being switched by the relay, and the other two Si-APD single photon detectors are in a Geiger mode; namely, the two Si-APD single photon detectors still receive photons, so that the false counting during the detection period is reduced, namely the dark counting of the single photon detectors is reduced;
during the working period of the Si-APD single photon detector group, the temperature sensor of the temperature high-pressure telemetering module inputs the acquired temperature data into the single chip microcomputer through an input pin of the single chip microcomputer, and the single chip microcomputer judges the received temperature data and controls the temperature high-pressure modulation module to refrigerate or heat the Si-APD single photon detector so as to adjust the temperature of the Si-APD single photon detector.
The utility model discloses a thereby the system sends out the switching of pulse control relay through Si-APD single photon detector's temperature anomaly for arbitrary eight Si-APD single photon detectors truns into linear mode, and all the other two Si-APD single photon detectors still are in the geiger mode, and all the other two Si-APD single photon detectors still receive the photon promptly, reduce the dark count rate of detecting the in-process.
The utility model discloses a closed loop that the system passes through that temperature high pressure remote measuring module, temperature high pressure modulation module and singlechip are constituteed monitors and controls the voltage and the temperature of Si-APD single photon detector group for the quenching and the recovery rate of avalanche diode among the Si-APD single photon detector reduce the dark count rate among the detection process and improved the detection efficiency of Si-APD single photon detector.
Variations and modifications to the above-described embodiments may occur to those skilled in the art, in light of the above teachings and teachings. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and changes to the present invention should fall within the protection scope of the claims of the present invention. In addition, although specific terms are used in the specification, the terms are used for convenience of description and do not limit the utility model in any way.
Claims (10)
1. A silicon APD single photon detection system is characterized by comprising a laser, a Si-APD single photon detector group, a relay, a temperature high-voltage telemetering module, a temperature high-voltage modulation module and a single chip microcomputer;
the Si-APD single photon detector group at least comprises a plurality of Si-APD single photon detectors;
the laser is used for generating photon signals and driving the Si-APD single photon detector group through optical signals, the Si-APD single photon detector group is connected with the single chip microcomputer through the relay, an output pin of the Si-APD single photon detector group is connected with an input pin of the temperature and high voltage telemetering module, an output pin of the temperature and high voltage telemetering module is connected with an input pin of the single chip microcomputer, an output pin of the single chip microcomputer is connected with an input pin of the temperature and high voltage modulation module, and an output pin of the temperature and high voltage modulation module is connected with an input pin of the Si-APD single photon detector group;
the temperature high-voltage telemetering module is used for collecting temperature data of the Si-APD single photon detector group and transmitting the collected temperature data to the single chip microcomputer, and the single chip microcomputer judges the received temperature data and controls the temperature high-voltage modulation module to regulate the temperature of the Si-APD single photon detector according to a judgment result.
2. The silicon APD single photon detection system of claim 1 in which said set of Si-APD single photon detectors comprises at least N (N > 2) Si-APD single photon detectors.
3. The silicon APD single photon detection system of claim 1, wherein the Si-APD single photon detector group receives optical signals emitted by the laser, the Si-APD single photon detector group receives optical signals by using the FC optical fiber interface, and focuses light emitted by the FC optical fiber interface to a light sensitive area of the Si-APD through a lens.
4. The silicon APD single photon detection system of claim 3 in which the relays control the N Si APD single photon detectors to switch between Geiger mode and linear mode operation by pulse signals.
5. The silicon APD single photon detection system of claim 4 in which the switching time of the relay ranges from 1ms to 3ms.
6. The silicon APD single photon detection system of claim 4, wherein when the working mode of the Si-APD single photon detector is linear, the Si-APD single photon detector converts the optical signal into an electrical signal and inputs the electrical signal into the single chip microcomputer through the digital-to-analog converter.
7. The silicon APD single photon detection system of claim 6 in which said digital to analog converters are analog to digital converters.
8. The silicon APD single photon detection system according to claim 1, wherein the single chip microcomputer controls the temperature high voltage modulation module to refrigerate or heat the Si-APD single photon detector through an electric signal.
9. The silicon APD single photon detection system according to claim 1, wherein the temperature sensor of the temperature high voltage telemetry module inputs the collected temperature data to the single chip microcomputer through an input pin of the single chip microcomputer, and the single chip microcomputer drives a TEC refrigerator in the temperature high voltage modulation module to adjust the temperature of the Si-APD single photon detector.
10. The silicon APD single photon detection system of claim 1, wherein the digital-to-analog converter in the temperature high voltage modulation module regulates the initial high voltage generated by the temperature high voltage modulation module, and the regulation range of the initial high voltage is 2V-22V.
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| CN202222573969.0U CN218330283U (en) | 2022-09-27 | 2022-09-27 | Silicon APD single photon detection system |
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| CN202222573969.0U CN218330283U (en) | 2022-09-27 | 2022-09-27 | Silicon APD single photon detection system |
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