CN219830156U - SOI pressure sensor chip - Google Patents
SOI pressure sensor chip Download PDFInfo
- Publication number
- CN219830156U CN219830156U CN202223141146.7U CN202223141146U CN219830156U CN 219830156 U CN219830156 U CN 219830156U CN 202223141146 U CN202223141146 U CN 202223141146U CN 219830156 U CN219830156 U CN 219830156U
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- China
- Prior art keywords
- film
- sensitive
- soi
- sensor chip
- pressure sensor
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 12
- 238000005260 corrosion Methods 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 12
- 239000012528 membrane Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims 1
- 238000002955 isolation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
The utility model discloses an SOI pressure sensor chip, which comprises a chip body, a clamped edge, a sensitive resistor process film, an SOI sheet oxide layer and an elastic sensitive film, wherein the sensitive resistor is arranged above the SOI sheet oxide layer, the sensitive resistor process film is arranged on the outer side of the sensitive resistor, the elastic sensitive film is arranged below the SOI sheet oxide layer, an etching area is arranged at the bottom of the chip body, the etching area is provided with a PECVD stress matching film, the etching area is provided with an etching slope, and the junction of the sensitive film and the clamped edge is formed between one side of the upper end of the elastic sensitive film and one end of the elastic sensitive film.
Description
Technical Field
The utility model belongs to the technical field of pressure sensor chips, and particularly relates to an SOI pressure sensor chip.
Background
The SOI pressure sensor chip is a novel and advanced physical pressure sensor chip. The silicon oxide is adopted to realize the electrical isolation between the sensitive element of the pressure chip and the substrate, the traditional pn junction electrical isolation technology is replaced, the limitation of the upper limit of the limit use temperature is broken, and as the clamped edge of the elastic diaphragm in the SOI pressure sensor chip only has one side of the elastic diaphragm, the stress state of the diaphragm is asymmetric when the sensitive chip is subjected to positive pressure and negative pressure, the stress in the positive and negative directions is not completely matched, and the positive and negative pressure output of the sensitive chip is asymmetric.
Disclosure of Invention
In order to achieve the above purpose, the technical scheme of the utility model is as follows: the utility model provides a SOI pressure sensor chip, the sensor chip includes chip body, clamped edge, sensitive resistance technology membrane, SOI piece oxide layer and elasticity sensitive membrane, sensitive resistance sets up SOI piece oxide layer top, the outside of sensitive resistance is provided with sensitive resistance technology membrane, the setting of elasticity sensitive membrane is in the below of SOI piece oxide layer, chip body bottom is provided with the corrosion area, the corrosion area is provided with PECVD stress matching film.
As an improvement of the utility model, the corrosion area is provided with a corrosion slope, and the junction of the sensitive film and the clamped edge is formed between one side of the upper end of the elastic sensitive film and one end of the elastic sensitive film.
As an improvement of the utility model, the pressure sensitive resistor is arranged at a position away from the junction of the sensitive film and the clamped edge, namely, the root of the corrosion slope.
Based on the technical scheme, the corrosion film is provided with a slope, and if the sensitive resistor is close to the slope, positive and negative pressure asymmetry is caused, so that the chip with the symmetrical positive and negative pressure needs to be arranged at a position far away from the slope, and the film matched with the front stress grows on the back surface of the chip.
As an improvement of the utility model, the distance between the sensitive resistor process film and the junction of the sensitive film and the clamped edge is set to be more than 20 microns.
As an improvement of the utility model, the PECVD stress matching film arranged on the back silicon is a silicon dioxide film or a multi-layer composite film, the back process temperature is lower than the alloy temperature of metal because the front surface is metallized, the PECVD method is adopted to grow the stress matching film, and the silicon dioxide film or the multi-layer composite film with the same stress as the front surface is manufactured on the back surface according to the measured stress of the front surface by using the PECVD method, so as to perform stress matching.
As an improvement of the utility model, the photoetching window of the PECVD stress matching film is smaller than the etching window of the etching area, so that the processing technology is convenient to realize.
Compared with the prior art, the utility model has the beneficial effects that: the sensitive resistor is arranged above the SOI sheet oxidation layer, a sensitive resistor process film is arranged on the outer side of the sensitive resistor, the elastic sensitive film is arranged below the SOI sheet oxidation layer, an etching area is arranged at the bottom of the chip body, a PECVD stress matching film is arranged in the etching area, the distance between the sensitive resistor process film and the junction of the sensitive film and the clamped edge is more than 20 microns, and the symmetry of the sensitive chip in the positive and negative directions on pressure sensitivity is good, and the front and back stresses are matched.
Drawings
Fig. 1 is a schematic diagram of a sensor chip structure in this embodiment.
List of drawing identifiers: 100-chip body, 101-sensitive resistor process film, 102-sensitive resistor, 103-SOI (silicon on insulator) chip oxide layer, 104-elastic sensitive film, 105-junction of sensitive film and clamped edge, 106-clamped edge, 107-corrosion region and 108-PECVD stress matching film.
Detailed Description
The present utility model is further illustrated in the following drawings and detailed description, which are to be understood as being merely illustrative of the utility model and not limiting the scope of the utility model.
Examples: referring to fig. 1, the sensor chip includes a chip body 100, a clamped edge 106, a sensing resistor 102, a process film 101 for the sensing resistor 102, an SOI sheet oxide layer 103 and an elastic sensing film 104, wherein the sensing resistor 102 is disposed above the SOI sheet oxide layer 103, the process film 101 for the sensing resistor 102 is disposed outside the sensing resistor 102, the elastic sensing film 104 is disposed below the SOI sheet oxide layer 103, an etching area 107 is disposed at the bottom of the chip body 100, and a PECVD stress matching film 108 is disposed in the etching area 107. The corrosion area 107 has a corrosion slope, and a junction 105 between the elastic sensitive film 104 and the clamped edge 106 is formed by one side of the upper end of the elastic sensitive film 104 and one end of the elastic sensitive film 104. The pressure sensitive resistor 102 is disposed at a distance away from the junction 105 of the sensitive membrane and the clamped edge. The etched film has a slope, and if the sense resistor 102 is closer to the slope, it will cause asymmetry of positive and negative pressure, so the chip with symmetric positive and negative pressure needs to have the pressure sense resistor 102 located far from the slope, and the back of the chip grows a film matching the front stress. The distance between the process film 101 of the sensitive resistor 102 and the junction 105 of the sensitive film and the clamped edge is set above 20 micrometers (as shown in d in fig. 1). The PECVD stress matching film 108 is a silicon dioxide film or a multi-layer composite film. The photolithographic window (as shown in fig. 1 a) of the PECVD stress matched film 108 is smaller than the etching window (as shown in fig. 1B) of the etched region 107.
It should be noted that the foregoing merely illustrates the technical idea of the present utility model and is not intended to limit the scope of the present utility model, and that a person skilled in the art may make several improvements and modifications without departing from the principles of the present utility model, which fall within the scope of the claims of the present utility model.
Claims (6)
1. The utility model provides a SOI pressure sensor chip, its characterized in that, sensor chip includes chip body (100), solid limit (106), sensitive resistance (102), sensitive resistance technology membrane (101), SOI piece oxide layer (103) and elasticity sensitive membrane (104), sensitive resistance (102) set up SOI piece oxide layer (103) top, the outside of sensitive resistance (102) is provided with sensitive resistance technology membrane (101), elasticity sensitive membrane (104) set up the below of SOI piece oxide layer (103), chip body (100) bottom is provided with corrosion area (107), corrosion area (107) are provided with PECVD stress matching film (108).
2. An SOI pressure sensor chip according to claim 1, characterized in that the corrosion area (107) has a corrosion slope, and the junction (105) between the sensing membrane and the clamped edge is formed by the upper end side of the clamped edge (106) and one end of the elastic sensing membrane (104).
3. An SOI pressure sensor chip according to claim 2, characterized in that the sensing resistor (102) is arranged at a distance from the junction (105) of the sensing membrane and the clamped edge.
4. A SOI pressure sensor chip according to claim 3, characterized in that the distance between the sensing resistive process film (101) and the junction (105) of the sensing film and the clamped edge is set to be above 20 micrometers.
5. The SOI pressure sensor chip of claim 1, wherein the PECVD stress matching film (108) is a silicon dioxide film or a multilayer composite film.
6. An SOI pressure sensor chip according to claim 5, characterized in that the photolithographic window of the PECVD stress matching film (108) is smaller than the etching window of the etched area (107).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223141146.7U CN219830156U (en) | 2022-11-25 | 2022-11-25 | SOI pressure sensor chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223141146.7U CN219830156U (en) | 2022-11-25 | 2022-11-25 | SOI pressure sensor chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219830156U true CN219830156U (en) | 2023-10-13 |
Family
ID=88284177
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202223141146.7U Active CN219830156U (en) | 2022-11-25 | 2022-11-25 | SOI pressure sensor chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219830156U (en) |
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2022
- 2022-11-25 CN CN202223141146.7U patent/CN219830156U/en active Active
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