CN219592534U

CN219592534U - Contact image sensor

Info

Publication number: CN219592534U
Application number: CN202321130328.6U
Authority: CN
Inventors: 赵兴文; 邓方明; 王辉; 靖树伟
Original assignee: Weihai Hualing Opto Electronics Co Ltd
Current assignee: Weihai Hualing Opto Electronics Co Ltd
Priority date: 2023-05-11
Filing date: 2023-05-11
Publication date: 2023-08-25
Anticipated expiration: 2033-05-11

Abstract

The utility model provides a contact image sensor. The contact image sensor includes: a frame; the photosensitive circuit board is arranged in the frame body; the photosensitive chip is carried on the photosensitive circuit board; the invar alloy layer is arranged between the photosensitive chip and the photosensitive circuit board, and the two side surfaces of the invar alloy layer are respectively connected with the photosensitive chip and the photosensitive circuit board. The utility model solves the problems of missing scanning data and image distortion of the contact type image sensor in the prior art.

Description

Contact image sensor

Technical Field

The utility model relates to the technical field of image sensor equipment, in particular to a contact type image sensor.

Background

At present, the development of the contact image sensor is increasingly rapid, and the contact image sensor is widely applied to industries such as scanning, identification, measurement and the like. Emerging materials and manufacturing processes continue to emerge, allowing such sensors to have higher resolution, lower noise, and faster response times. In addition, a variety of new imaging techniques are also emerging and are being applied in various fields.

However, there are some drawbacks in existing contact image sensors: because the photosensitive chip is limited by production and processing technology, the length is generally limited to a certain size, and the length of the scanned object is generally longer than that of the photosensitive chip, in order to meet the requirement of scanning length, the photosensitive chip needs to be adhered to a designed photosensitive circuit board in sequence, and 2 gaps are necessarily formed in the process of adhering the photosensitive chip in sequence: one is that adjacent photosensitive chips have gaps when placed, and if two adjacent photosensitive chips have no gaps, the position movement change of the photosensitive chips is necessarily caused; in addition, because the photosensitive chip and the photosensitive circuit board are two distinct materials, the contact type image sensor is subjected to a high-temperature curing process in the production process, and in the high-temperature process, as the two materials with different expansion rates are bonded together, the expansion lengths of the two materials are different, after the temperature returns to normal temperature, the gap between the linear arrays formed by the photosensitive chips is enlarged, the scanning invalid area is enlarged, the loss of scanning data is caused, and the image is distorted.

That is, the related art contact image sensor has problems of missing scan data and image distortion.

Disclosure of Invention

The utility model mainly aims to provide a contact image sensor so as to solve the problems of missing scanning data and image distortion of the contact image sensor in the prior art.

In order to achieve the above object, the present utility model provides a contact image sensor comprising: a frame; the photosensitive circuit board is arranged in the frame body; the photosensitive chip is carried on the photosensitive circuit board; the invar alloy layer is arranged between the photosensitive chip and the photosensitive circuit board, and the two side surfaces of the invar alloy layer are respectively connected with the photosensitive chip and the photosensitive circuit board.

Further, the invar layer is glued to the photosensitive chip and/or the invar layer is glued to the photosensitive circuit board.

Further, the plurality of photosensitive chips are arranged in a straight line, the invar alloy layers extend along the arrangement direction of the plurality of photosensitive chips, and the projection of each photosensitive chip on the photosensitive circuit board falls into the projection of the invar alloy layers on the photosensitive circuit board.

Further, a plurality of photosensitive chips arranged in a straight line are arranged at equal intervals.

Further, the photosensitive circuit board is one or more, and when the photosensitive circuit boards are a plurality of, the photosensitive circuit boards are spliced in sequence, and the splicing positions of two adjacent photosensitive circuit boards in the photosensitive circuit boards are provided with invar alloy layers.

Further, the photosensitive circuit boards are multiple, the multiple photosensitive circuit boards comprise a first circuit board and a second circuit board, the first circuit board is spliced with the second circuit board, an invar alloy layer is arranged at the splicing position of the first circuit board and the second circuit board, the invar alloy layer covers part of the first circuit board and part of the second circuit board, and the photosensitive chip is located on one side, far away from the first circuit board and the second circuit board, of the invar alloy layer.

Further, the photosensitive circuit board is provided with a sink for accommodating the invar alloy layer, and when the invar alloy layer is arranged in the sink, one side surface of the invar alloy layer, which faces the photosensitive chip, is flush with one side surface of the photosensitive circuit board, which faces the photosensitive chip.

Further, the photosensitive circuit board is provided with a sink groove, the invar alloy layer sequentially comprises a containing layer and a bearing layer along the direction far away from the photosensitive circuit board, the containing layer is arranged in the sink groove, the bearing layer is arranged at the top of the sink groove in a covering mode, and the projection area of the containing layer on the photosensitive circuit board is smaller than that of the bearing layer on the photosensitive circuit board.

Further, the invar alloy layer has a thickness of 0.2mm or more and 1mm or less.

Further, the invar layer has a length at least 30 times the length of the photosensitive chip.

By applying the technical scheme of the utility model, the contact type image sensor comprises a frame body, a photosensitive circuit board, a photosensitive chip and an invar alloy layer, wherein the photosensitive circuit board is arranged in the frame body; the photosensitive chip is carried on the photosensitive circuit board; the invar alloy layer is arranged between the photosensitive chip and the photosensitive circuit board, and the two side surfaces of the invar alloy layer are respectively connected with the photosensitive chip and the photosensitive circuit board.

The invar alloy layer is arranged between the photosensitive chip and the photosensitive circuit board, so that the situations that the position of the photosensitive chip is changed in a subsequent high-temperature process and the scanning data is lost and the image is distorted due to the fact that the photosensitive chip is directly connected with the photosensitive circuit board are avoided; the low thermal expansion coefficient of the invar alloy layer is utilized, so that the position of the photosensitive chip is guaranteed not to change in the production process, the position accuracy and the assembly accuracy of the photosensitive chip are guaranteed, the integrity of a scanned image is guaranteed, and the use effect is guaranteed.

Drawings

The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain the utility model. In the drawings:

fig. 1 shows a schematic structure of a prior art contact image sensor;

FIG. 2 shows a schematic diagram of the structure of a contact image sensor according to an alternative embodiment of the present utility model;

fig. 3 shows a schematic diagram of the assembly of a photosensitive circuit board and invar layers of a contact image sensor according to an alternative embodiment of the present utility model.

Wherein the above figures include the following reference numerals:

10. a photosensitive chip; 20. a photosensitive circuit board; 21. a first circuit board; 22. a second circuit board; 30. an invar alloy layer; 40. a frame; 41. a light-transmitting plate; 50. a light source; 60. and a lens.

Detailed Description

It should be noted that, without conflict, the embodiments of the present utility model and features of the embodiments may be combined with each other. The utility model will be described in detail below with reference to the drawings in connection with embodiments.

It is noted that all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this utility model belongs unless otherwise indicated.

In the present utility model, unless otherwise indicated, terms of orientation such as "upper, lower, top, bottom" are used generally with respect to the orientation shown in the drawings or with respect to the component itself in the vertical, upright or gravitational direction; also, for ease of understanding and description, "inner and outer" refers to inner and outer relative to the profile of each component itself, but the above-mentioned orientation terms are not intended to limit the present utility model.

As shown in fig. 1, a contact image sensor in the prior art is shown. As can be seen from the figure, when the photosensitive chip 10 of the conventional contact image sensor is connected to the photosensitive circuit board 20, the photosensitive chip 10 is directly glued to the photosensitive circuit board 20 by bonding, and when the subsequent adhesive is cured and the gold wires of the photosensitive chip 10 are wired, high-temperature auxiliary processes are required, the thermal expansion degree of the photosensitive chip 10 and the photosensitive circuit board 20 is different, and when the photosensitive chip 10 and the photosensitive circuit board 20 are heated, the expansion length is different, so that when the temperature returns to normal temperature, the relative positions of the photosensitive chip 10 and the photosensitive circuit board 20 are changed to different degrees compared with the position before the high temperature, so that the gap between the photosensitive chip 10 and the photosensitive circuit board 20 is enlarged, the invalid area of the adjacent photosensitive chip 10 is enlarged, and the scanning data is lost.

In order to solve the problems of missing scanning data and image distortion of a contact image sensor in the prior art, the utility model provides the contact image sensor.

As shown in fig. 2 and 3, the contact image sensor includes a frame body 40, a photosensitive circuit board 20, a photosensitive chip 10, and an invar layer 30, the photosensitive circuit board 20 being disposed in the frame body 40; the photosensitive chip 10 is mounted on the photosensitive circuit board 20; the invar layer 30 is disposed between the photosensitive chip 10 and the photosensitive circuit board 20, and both side surfaces of the invar layer 30 are respectively connected with the photosensitive chip 10 and the photosensitive circuit board 20.

By arranging the invar alloy layer 30 between the photosensitive chip 10 and the photosensitive circuit board 20, the conditions of scanning data loss and image distortion caused by the position change of the photosensitive chip 10 in the subsequent high-temperature process due to the direct connection of the photosensitive chip 10 and the photosensitive circuit board 20 are avoided; the low thermal expansion coefficient of the invar alloy layer 30 is utilized, so that the position of the photosensitive chip 10 is ensured not to be changed in the production process, the position accuracy and the assembly accuracy of the photosensitive chip 10 are ensured, the integrity of a scanned image is further ensured, and the use effect is ensured.

Of course, the contact image sensor of the present utility model is provided with the light source 50 and the lens 60 in the frame 40, one side of the frame 40 is provided with the light-transmitting plate 41, the light-transmitting plate 41 and the photosensitive circuit board 20 are respectively arranged on two opposite sides of a group of the frame 40, the light emitted by the light source 50 irradiates the detected object through the light-transmitting plate 41, the reflected information light of the detected object is transmitted to the photosensitive chip 10 through the lens 60, and the detection scanning of the detected object is realized by converting the light signal into the electric signal and sending the electric signal to the subsequent data processing system.

Specifically, the invar alloy layer 30 may also be called as a constant steel layer, the plurality of photosensitive chips 10 of the present utility model are arranged in a straight line, the invar alloy layer 30 extends along the arrangement direction of the plurality of photosensitive chips 10, and the projection of each photosensitive chip 10 on the photosensitive circuit board 20 falls into the projection of the invar alloy layer 30 on the photosensitive circuit board 20. The arrangement is such that the projected area of invar layer 30 on photosensitive circuit board 20 is greater than the projected area of photosensitive chip 10 on photosensitive circuit board 20. The plurality of photosensitive chips 10 arranged in a straight line are arranged at equal intervals.

It should be noted that, the thermal expansion coefficient of the invar alloy layer 30 of the present utility model is close to the thermal expansion coefficient of the photosensitive chip 10, the thermal expansion coefficient of the invar alloy layer 30 is 1.5, the thermal expansion coefficient of the photosensitive chip 10 is 0.5, the thermal expansion coefficient of the photosensitive circuit board 20 is 17, and the invar alloy layer 30 and the photosensitive circuit board 20 are glued by using adhesive tape so as to be flexibly glued, and the photosensitive chip 10 is glued on the invar alloy layer 30 by using adhesive so as to glue the invar alloy layer 30 and the photosensitive chip 10.

By adding the invar alloy layer 30 between the photosensitive chip 10 and the photosensitive circuit board 20, the invar alloy layer 30 cannot expand and cannot change in size in the high-temperature process due to the low thermal expansion coefficient, so that the change of the distance between the adjacent photosensitive chips 10 arranged on the invar alloy layer can be effectively avoided, the interval stability of the photosensitive chips 10 in linear arrangement is ensured, the problem of increased invalid areas and data loss caused by the production process of the CIS image sensor in the production process is avoided, the scanning data is more true, and the scanning information is more complete.

Specifically, the number of the photosensitive circuit boards 20 is one or more, when the number of the photosensitive circuit boards 20 is plural, the plural photosensitive circuit boards 20 are sequentially spliced, and the invar alloy layers 30 are disposed at the splicing positions of two adjacent photosensitive circuit boards 20 in the plural photosensitive circuit boards 20. That is, the photosensitive circuit board 20 may be a whole or a plurality of the photosensitive circuit boards 20, and when the photosensitive circuit board 20 is a plurality of the photosensitive circuit boards, the plurality of the photosensitive circuit boards 20 may be sequentially spliced in a direction perpendicular to the scanning direction, and the plurality of the photosensitive circuit boards 20 may be sequentially spliced in the scanning direction.

In another alternative embodiment shown in fig. 3, the plurality of photosensitive circuit boards 20 includes a first circuit board 21 and a second circuit board 22, the first circuit board 21 and the second circuit board 22 are spliced along a direction perpendicular to the scanning direction, an invar alloy layer 30 is disposed at a splicing position of the first circuit board 21 and the second circuit board 22, the invar alloy layer 30 covers a part of the first circuit board 21 and a part of the second circuit board 22, and the photosensitive chip 10 is located on a side of the invar alloy layer 30 away from the first circuit board 21 and the second circuit board 22. After the first circuit board 21 and the second circuit board 22 are spliced, the adjacent photosensitive chips 10 at the splicing position are limited by splicing materials, gaps of the adjacent photosensitive chips 10 can be enlarged after the high-temperature production process, so that scanning data are lost, and the positions of the adjacent photosensitive chips 10 at the splicing position are not changed by arranging the invar alloy layer 30 and utilizing the low thermal expansion coefficient of the invar alloy layer 30, so that quality is easier to ensure, and scanning is more realistic.

In another alternative embodiment, not shown in the figures, the photosensitive circuit board 20 has a countersink that accommodates the invar alloy layer 30, the countersink having a size that matches the size of the invar alloy layer 30, the invar alloy layer 30 being glued to the bottom of the countersink, and a side surface of the invar alloy layer 30 facing the photosensitive chip 10 being flush with a side surface of the photosensitive circuit board 20 facing the photosensitive chip 10 when the invar alloy layer 30 is disposed in the countersink. The arrangement of the sinking groove not only provides an installation space for the invar alloy layer 30, but also enables the sinking groove to limit the invar alloy layer 30 so as to ensure the position stability of the invar alloy layer 30 and ensure that the photosensitive chip 10 and the photosensitive circuit board 20 can work stably; the invar alloy layer 30 is arranged to be flush with the surface of the side, facing the photosensitive chip 10, of the photosensitive circuit board 20, facing the photosensitive chip 10, and the invar alloy layer 30 can be hidden in the photosensitive circuit board 20, so that the appearance is good.

In another alternative embodiment, not shown in the drawings, the photosensitive circuit board 20 is provided with a sink, the invar alloy layer 30 comprises a containing layer and a bearing layer which are sequentially connected along the direction away from the photosensitive circuit board 20, the containing layer is arranged in the sink, the height of the containing layer can be equal to the thickness of the sink, the bearing layer is covered on the top of the sink, the projection area of the containing layer on the photosensitive circuit board 20 is smaller than the projection area of the bearing layer on the photosensitive circuit board 20, the part of the bearing layer extending out of the containing layer can be adhered to the photosensitive circuit board 20 around the sink during connection, and the invar alloy layer 30 can be partially embedded into the photosensitive circuit board 20 by reasonably planning the structure of the invar alloy layer 30 when being connected with the photosensitive circuit board 20, so that the assembly strength of the invar alloy layer 30 and the photosensitive circuit board 20 is improved, and the assembly stability is ensured.

Specifically, the invar layer 30 has a thickness of 0.2mm or more and 1mm or less. By reasonably planning the thickness of the invar alloy layer 30, the dimension rationality of the invar alloy layer 30 is guaranteed, the use reliability of the invar alloy layer 30 is guaranteed, and meanwhile, the influence on miniaturization caused by overlarge thickness of the invar alloy layer 30 is avoided.

Specifically, the invar layer 30 has a length at least 30 times the length of one of the photosensitive chips 10. The length of the invar alloy layer 30 is the length of the invar alloy layer 30 in the scanning direction, and the length of the photosensitive chip 10 is the length of the photosensitive chip 10 in the scanning direction, so that the arrangement is beneficial to ensuring the dimension rationality of the invar alloy layer 30, further ensuring that the photosensitive chip 10 can be covered by the invar alloy layer 30 no matter how much the photosensitive chip 10 expands in the high-temperature process, and ensuring the position accuracy of the photosensitive chip 10.

It will be apparent that the embodiments described above are merely some, but not all, embodiments of the utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present utility model without making any inventive effort, shall fall within the scope of the present utility model.

It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present utility model. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.

It should be noted that the terms "first," "second," and the like in the description and the claims of the present utility model and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that embodiments of the utility model described herein may be implemented in sequences other than those illustrated or otherwise described herein.

The above description is only of the preferred embodiments of the present utility model and is not intended to limit the present utility model, but various modifications and variations can be made to the present utility model by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present utility model should be included in the protection scope of the present utility model.

Claims

1. A contact image sensor, comprising:

a frame (40);

a photosensitive circuit board (20), the photosensitive circuit board (20) being disposed in the frame (40);

a photosensitive chip (10), wherein the photosensitive chip (10) is mounted on the photosensitive circuit board (20);

the invar alloy layer (30), the invar alloy layer (30) is arranged between the photosensitive chip (10) and the photosensitive circuit board (20), and the two side surfaces of the invar alloy layer (30) are respectively connected with the photosensitive chip (10) and the photosensitive circuit board (20).

2. The contact image sensor according to claim 1, characterized in that the invar layer (30) is glued to the photosensitive chip (10) and/or that the invar layer (30) is glued to the photosensitive circuit board (20).

3. The contact image sensor according to claim 1, wherein the plurality of photosensitive chips (10) are arranged in a straight line, the invar alloy layer (30) extends along the arrangement direction of the plurality of photosensitive chips (10), and the projection of each photosensitive chip (10) on the photosensitive circuit board (20) falls into the projection of the invar alloy layer (30) on the photosensitive circuit board (20).

4. A contact image sensor according to claim 3, wherein a plurality of said photosensitive chips (10) arranged in a straight line are arranged at equal intervals.

5. The contact image sensor according to claim 1, wherein one or more of the photosensitive circuit boards (20) are provided, and when the photosensitive circuit boards (20) are provided in plurality, a plurality of the photosensitive circuit boards (20) are sequentially spliced, and the invar alloy layer (30) is provided at the splice position of two adjacent photosensitive circuit boards (20) among the plurality of the photosensitive circuit boards (20).

6. The contact image sensor according to claim 1, wherein the plurality of photosensitive circuit boards (20) are plural, the plurality of photosensitive circuit boards (20) include a first circuit board (21) and a second circuit board (22), the first circuit board (21) is spliced with the second circuit board (22), the invar layer (30) is provided at a splice position of the first circuit board (21) and the second circuit board (22), and the invar layer (30) covers a part of the first circuit board (21) and a part of the second circuit board (22), and the photosensitive chip (10) is located on a side of the invar layer (30) away from the first circuit board (21) and the second circuit board (22).

7. The contact image sensor of claim 1, wherein the photosensitive circuit board (20) has a sink for receiving the invar alloy layer (30), a side surface of the invar alloy layer (30) facing the photosensitive chip (10) being flush with a side surface of the photosensitive circuit board (20) facing the photosensitive chip (10) when the invar alloy layer (30) is disposed in the sink.

8. The contact image sensor of claim 1, wherein the photosensitive circuit board (20) has a sink, the invar alloy layer (30) sequentially comprises a containing layer and a receiving layer along a direction away from the photosensitive circuit board (20), the containing layer is disposed in the sink, the receiving layer is covered on top of the sink, and a projection area of the containing layer on the photosensitive circuit board (20) is smaller than a projection area of the receiving layer on the photosensitive circuit board (20).

9. The contact image sensor according to claim 1, wherein the invar layer (30) has a thickness of 0.2mm or more and 1mm or less.

10. The contact image sensor according to claim 1, characterized in that the invar layer (30) has a length at least 30 times the length of the photosensitive chip (10).