CN219363794U - Chemical vapor deposition furnace for preparing ZnSe - Google Patents
Chemical vapor deposition furnace for preparing ZnSe Download PDFInfo
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- CN219363794U CN219363794U CN202320625756.XU CN202320625756U CN219363794U CN 219363794 U CN219363794 U CN 219363794U CN 202320625756 U CN202320625756 U CN 202320625756U CN 219363794 U CN219363794 U CN 219363794U
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Abstract
The utility model discloses a chemical vapor deposition furnace for preparing ZnSe, which comprises a crucible, a crucible cover, a deposition chamber, a material receiving box, an air duct, a lower heating chamber, an upper heating chamber, a first air inlet pipe, a second air inlet pipe, a hemispherical cover, a deposition die and a return pipe which are sequentially arranged from bottom to top. According to the utility model, hydrogen selenide and argon are introduced into the first air inlet pipe and the second air inlet pipe, namely, the hydrogen selenide reacts with zinc steam in the crucible, and generated ZnSe and part of unreacted hydrogen selenide and zinc steam enter the deposition chamber and then contact and react with the hydrogen selenide and the argon which are introduced into the deposition chamber through the second air inlet pipe, so that the generation rate of the zinc selenide is improved; the hemispherical cover with uniformly distributed permeation holes can uniformly distribute the gas entering the deposition chamber from the crucible, and the radial flow mode of the outlet can enable the gas flow to cover the edge of the deposition die, thereby being beneficial to improving the conversion rate, uniformity and raw material utilization rate of the product.
Description
Technical Field
The utility model belongs to the technical field of zinc selenide preparation, and particularly relates to a chemical vapor deposition furnace for preparing ZnSe.
Background
ZnSe (zinc selenide) is yellow crystalline powder, is mainly used for manufacturing optical devices in lasers, has the advantages of extremely low scattering loss and the like, and has high bearing capacity to thermal shock. The traditional ZnSe production equipment has low raw material utilization rate in the production process, short residence time of products in a deposition chamber, low product conversion rate and poor uniformity. For example, chinese patent utility model discloses a chemical vapor deposition furnace (application number: 201821327035.6) which utilizes chemical vapor deposition to produce ZnSe, and the production mode and the reaction process are optimized by further improvement although the product conversion rate is improved to a certain extent. For this reason, it is very necessary to develop a chemical vapor deposition furnace for preparing ZnSe which improves the conversion rate of the product.
Disclosure of Invention
The utility model aims to provide a chemical vapor deposition furnace for preparing ZnSe.
The utility model aims at realizing the method, which comprises a crucible, a crucible cover, a deposition chamber, a receiving box and an air duct, wherein the crucible, the crucible cover, the deposition chamber, the receiving box and the air duct are sequentially arranged from bottom to top, a lower heating chamber is arranged outside the crucible, the lower heating chamber is used for heating the crucible, an upper heating chamber is arranged outside the deposition chamber and the receiving box, the upper heating chamber is used for heating the deposition chamber and the receiving box, the top and the bottom of the receiving box are respectively and correspondingly provided with an air port, the center of the crucible cover is provided with a hole, the hole on the lower surface of the crucible cover is provided with a first air inlet pipe, the first air inlet pipe is communicated with an air supply port on the side surface of the crucible cover through a pipeline embedded in the crucible cover, the hole on the upper surface of the crucible cover is provided with a second air inlet pipe, the second air inlet pipe is communicated with the air supply port on the side surface of the crucible cover through a pipeline embedded in the crucible cover, the second air inlet pipe penetrates through a small hole at the bottom of the deposition chamber, the upper cover of the hole is provided with a hemispherical cover, the hemispherical cover is uniformly distributed on the surface, and penetrates through the center hole at the bottom of the deposition chamber and stretches into the deposition chamber;
the two sides in the deposition chamber are respectively and horizontally provided with plate-shaped deposition dies from bottom to top, each group of deposition dies corresponding to the left side and the right side are staggered up and down, and the deposition dies are uniformly provided with permeation holes.
And return pipes are longitudinally arranged outside the two sides of the deposition chamber respectively, the return pipes are positioned in the upper heating chamber, the upper ends of the return pipes are communicated with the upper part in the deposition chamber, and the lower ends of the return pipes are communicated with the bottom part in the deposition chamber.
Preferably, the deposition mould has four, and first deposition mould edge, the interval between second deposition mould edge and the deposition chamber axis that from bottom to top arranged all, first deposition mould edge, second deposition mould edge all coincide with the deposition chamber axis.
Preferably, a dust collecting groove is arranged in the material collecting box, a cover plate is arranged on the dust collecting groove, a transmission hole is formed in the cover plate, a heat preservation chamber is arranged on the outer sides of the lower heating chamber and the upper heating chamber, the heat preservation chamber plays a role in heat preservation, and particularly, heat preservation materials well known to those skilled in the art can be used; the outside of the heat preservation chamber is provided with a cooling chamber which is used for cooling the chemical vapor deposition furnace, and a water cooling structure can be adopted specifically.
Preferably, one side of the deposition mould corresponding to the inner wall of the deposition chamber is of a wedge-shaped structure, and the wedge-shaped structure of the deposition mould is clamped into the wedge-shaped groove of the inner wall of the deposition chamber.
The utility model has the beneficial effects that:
1. according to the utility model, hydrogen selenide and argon are introduced into the first air inlet pipe and the second air inlet pipe, namely, the hydrogen selenide reacts with zinc steam in the crucible, and generated ZnSe and part of unreacted hydrogen selenide and zinc steam enter the deposition chamber and then contact and react with the hydrogen selenide and the argon which are introduced into the deposition chamber through the second air inlet pipe, so that the generation rate of the zinc selenide is improved;
2. the hemispherical cover with uniformly distributed permeation holes can uniformly distribute the gas entering the deposition chamber from the crucible, and the radial flow mode of the outlet can enable the gas flow to cover the edge of the deposition die, thereby being beneficial to improving the conversion rate, uniformity and raw material utilization rate of the product;
3. the four deposition dies are adopted, and the third deposition die and the fourth deposition die can further deposit materials which are not deposited by the first deposition die and the second deposition die, so that the product conversion rate and the raw material utilization rate are further improved; and both sides of the deposition mould can be deposited;
4. the reflux pipe of the deposition chamber fully utilizes the airflow of the deposition chamber, thereby improving the conversion rate; the reflux pipe is arranged in the upper heating chamber, and the temperature control is stable; the utility model can also be provided with a heat preservation chamber and a cooling chamber, has reasonable and symmetrical overall structural design and is easy to install; in addition, the utility model can also be used for preparing other powder or ZnS crystals and the like.
Drawings
FIG. 1 is a schematic cross-sectional view of the present utility model;
FIG. 2 is a schematic view of the surface structure of the crucible cover;
FIG. 3 is a schematic view of the bottom surface structure of the crucible cover;
FIG. 4 is a schematic top view of a hemispherical cap;
FIG. 5 is a schematic top view of a deposition tool;
FIG. 6 is a schematic view of a wedge-shaped connection between a deposition die and the interior walls of a deposition chamber;
in the figure: the device comprises a 1-crucible, a 2-crucible cover, a 3-deposition chamber, a 4-receiving box, a 5-air duct, a 6-lower heating chamber, a 7-upper heating chamber, 8-holes, a 9-first air inlet pipe, a 10-second air inlet pipe, a 11-hemispherical cover, a 12-deposition mold, a 13-return pipe, a 14-dust collecting tank, a 15-cover plate, a 16-heat preservation chamber and a 17-cooling chamber.
Detailed Description
The utility model is further described below with reference to examples and drawings, but is not limited in any way, and any changes or substitutions based on the teachings of the utility model are intended to fall within the scope of the utility model.
Example 1
As shown in fig. 1-3, the chemical vapor deposition furnace for preparing ZnSe in this embodiment includes a crucible 1, a crucible cover 2, a deposition chamber 3, a receiving box 4, and an air duct 5 sequentially arranged from bottom to top, a lower heating chamber 6 is arranged outside the crucible 1, an upper heating chamber 7 is arranged outside the deposition chamber 3 and the receiving box 4, air ports are correspondingly arranged at the top and bottom of the receiving box 4, a hole 8 is arranged in the center of the crucible cover 2, a first air inlet pipe 9 is arranged around the hole 8 in the lower surface of the crucible cover 2, the first air inlet pipe 9 is communicated with an air supply port on the side surface of the crucible cover 2 through a pipeline embedded in the crucible cover 2, a second air inlet pipe 10 is arranged around the hole 8 in the upper surface of the crucible cover 2, the second air inlet pipe 10 is communicated with the air supply port on the side surface of the crucible cover 2 through a small hole on the bottom of the deposition chamber 3, a hemispherical cover 11 is arranged on the upper cover of the hole 8, and the hemispherical cover 11 uniformly distributed on the surface of the hemispherical cover 11 penetrates into the deposition chamber 3 through the center hole 3;
the two sides in the deposition chamber 3 are respectively and horizontally provided with plate-shaped deposition dies 12 from bottom to top, each group of deposition dies 12 corresponding to the left side and the right side are staggered up and down, and the deposition dies 12 are uniformly provided with transmission holes.
The outside of the two sides of the deposition chamber 3 is longitudinally provided with a return pipe 13 respectively, the return pipe 13 is positioned in the upper heating chamber 7, the upper end of the return pipe 13 is communicated with the upper part in the deposition chamber 3, and the lower end of the return pipe 13 is communicated with the bottom in the deposition chamber 3.
Example 2
The chemical vapor deposition furnace for preparing ZnSe in this embodiment is based on embodiment 1, the deposition mold 12 has four deposition mold edges, which are arranged from bottom to top, and the first deposition mold edge and the second deposition mold edge are spaced from the axis of the deposition chamber 3, and the first deposition mold edge and the second deposition mold edge are coincident with the axis of the deposition chamber 3; the collecting box 4 is internally provided with a dust collecting groove 14, a cover plate 15 is arranged on the dust collecting groove 14, a transmission hole is arranged on the cover plate 15, the outer sides of the lower heating chamber 6 and the upper heating chamber 7 are provided with a heat preservation chamber 16, and the outer side of the heat preservation chamber 16 is provided with a cooling chamber 17.
The working principle and the working process of the utility model are as follows: the solid raw material zinc is filled into a crucible 1, a crucible cover 2, a corresponding air supply pipeline, a deposition chamber 3, a material receiving box 4, an air duct 5 and other parts are arranged, an electric control system matched with a chemical vapor deposition furnace is started, and all the equipment starts to operate; hydrogen selenide and argon enter the crucible 1 through the first air inlet pipe 9, under the protection of the argon, the hydrogen selenide reacts with zinc steam, generated ZnSe and part of unreacted hydrogen selenide and zinc steam enter the deposition chamber 3 through the transmission holes of the hemispherical cover 11, and the ZnSe and the zinc steam further contact and react with shielding gas argon and hydrogen selenide gas which are fed into the deposition chamber 3 through the second air inlet pipe 10, so that the generation rate of the zinc selenide is improved; hydrogen selenide is deposited on the deposition die 12 of the deposition chamber 3 such that a majority of the zinc selenide is deposited into the deposition chamber 3; part of the gas is sent back to the bottom of the deposition chamber 3 again through a return pipe 13 for further reaction; part of the zinc selenide which is not deposited and unreacted hydrogen selenide enter a receiving box 4 along with air flow, the receiving box 4 and a dust collecting groove 14 collect part of zinc selenide dust, the rest of zinc selenide dust which is not collected enters a rear-end dust collecting system through an air duct 5 to be further collected, and tail gas enters a tail gas treatment system through a vacuum system to be treated, so that the tail gas reaches the standard and is discharged.
Claims (3)
1. The chemical vapor deposition furnace for preparing ZnSe comprises a crucible (1), a crucible cover (2), a deposition chamber (3), a receiving box (4) and an air duct (5) which are sequentially arranged from bottom to top, wherein a lower heating chamber (6) is arranged outside the crucible (1), an upper heating chamber (7) is arranged outside the deposition chamber (3) and the receiving box (4), air inlets are respectively and correspondingly arranged at the top and the bottom of the receiving box (4), the chemical vapor deposition furnace is characterized in that a hole (8) is arranged in the center of the crucible cover (2), first air inlet pipes (9) are circumferentially arranged in the hole (8) on the lower surface of the crucible cover (2), the first air inlet pipes (9) are communicated with air supply openings on the side surface of the crucible cover (2) through a pipeline buried in the crucible cover (2), the first air inlet pipe openings (9) are arranged in the crucible cover (1), second air inlet pipes (10) are circumferentially arranged on the periphery of the hole (8) on the upper surface of the crucible cover (2) and are communicated with air supply openings on the side surface of the crucible cover (2), the second air inlet pipes (10) penetrate through the pipeline buried in the crucible cover (2) and penetrate through the hole (3) to the hole (11) uniformly distributed on the side surface of the crucible cover (2), the hemispherical cover (11) passes through the central hole at the bottom of the deposition chamber (3) and stretches into the deposition chamber (3);
the two sides in the deposition chamber (3) are respectively and horizontally provided with plate-shaped deposition dies (12) from bottom to top, each group of deposition dies (12) corresponding to each other is staggered up and down, and the deposition dies (12) are uniformly provided with permeation holes;
and return pipes (13) are longitudinally arranged outside two sides of the deposition chamber (3) respectively, the return pipes (13) are positioned in the upper heating chamber (7), the upper ends of the return pipes (13) are communicated with the upper part in the deposition chamber (3), and the lower ends of the return pipes (13) are communicated with the bottom part in the deposition chamber (3).
2. Chemical vapor deposition furnace for the preparation of ZnSe according to claim 1, characterized in that the deposition mould (12) has four deposition mould edges, the first deposition mould edge and the second deposition mould edge being arranged from bottom to top, each being spaced from the axis of the deposition chamber (3), the first deposition mould edge and the second deposition mould edge being coincident with the axis of the deposition chamber (3).
3. The chemical vapor deposition furnace for preparing ZnSe according to claim 1, wherein a dust collecting tank (14) is arranged in the receiving box (4), a cover plate (15) is arranged on the dust collecting tank (14), a permeation hole is arranged on the cover plate (15), a heat preservation chamber (16) is arranged outside the lower heating chamber (6) and the upper heating chamber (7), and a cooling chamber (17) is arranged outside the heat preservation chamber (16).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320625756.XU CN219363794U (en) | 2023-03-27 | 2023-03-27 | Chemical vapor deposition furnace for preparing ZnSe |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320625756.XU CN219363794U (en) | 2023-03-27 | 2023-03-27 | Chemical vapor deposition furnace for preparing ZnSe |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219363794U true CN219363794U (en) | 2023-07-18 |
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ID=87138433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320625756.XU Active CN219363794U (en) | 2023-03-27 | 2023-03-27 | Chemical vapor deposition furnace for preparing ZnSe |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219363794U (en) |
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2023
- 2023-03-27 CN CN202320625756.XU patent/CN219363794U/en active Active
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