CN219363794U - A chemical vapor deposition furnace for preparing ZnSe - Google Patents

Abstract

The utility model discloses a chemical vapor deposition furnace for preparing ZnSe, which comprises a crucible, a crucible cover, a deposition chamber, a material receiving box, an air duct, a lower heating chamber, an upper heating chamber, a first air inlet pipe, a second air inlet pipe, a hemispherical cover, a deposition die and a return pipe which are sequentially arranged from bottom to top. According to the utility model, hydrogen selenide and argon are introduced into the first air inlet pipe and the second air inlet pipe, namely, the hydrogen selenide reacts with zinc steam in the crucible, and generated ZnSe and part of unreacted hydrogen selenide and zinc steam enter the deposition chamber and then contact and react with the hydrogen selenide and the argon which are introduced into the deposition chamber through the second air inlet pipe, so that the generation rate of the zinc selenide is improved; the hemispherical cover with uniformly distributed permeation holes can uniformly distribute the gas entering the deposition chamber from the crucible, and the radial flow mode of the outlet can enable the gas flow to cover the edge of the deposition die, thereby being beneficial to improving the conversion rate, uniformity and raw material utilization rate of the product.

Description

A chemical vapor deposition furnace for preparing ZnSe

technical field

The utility model belongs to the technical field of zinc selenide preparation, in particular to a chemical vapor deposition furnace for preparing ZnSe.

Background technique

ZnSe (Zinc Selenide) is a yellow crystalline powder and is mainly used in the manufacture of optical devices in lasers. It has the advantages of extremely low scattering loss and high tolerance to thermal shock. Traditional ZnSe production equipment has low raw material utilization rate in the production process, short residence time of products in the deposition chamber, low product conversion rate and poor uniformity. For example, a Chinese utility model patent discloses a chemical vapor deposition furnace (application number: 201821327035.6), which uses chemical vapor deposition to produce ZnSe. Although the product conversion rate has been improved to a certain extent, its production method and reaction process should be further optimized. . For this reason, it is very necessary to develop a chemical vapor deposition furnace for preparing ZnSe that improves the product conversion rate.

Utility model content

The purpose of the utility model is to provide a chemical vapor deposition furnace for preparing ZnSe.

The purpose of the utility model is achieved in this way, including a crucible, a crucible cover, a deposition chamber, a material receiving box, and an air guide tube arranged sequentially from bottom to top, and a lower heating chamber is arranged outside the crucible, which is used for heating the crucible, depositing There is an upper heating chamber outside the chamber and the receiving box, the upper heating chamber is used to heat the deposition chamber and the receiving box, the top and the bottom of the receiving box are respectively provided with gas ports, the center of the crucible cover is provided with a hole, and the crucible cover The hole on the lower surface is surrounded by a first air intake pipe. The first air intake pipe communicates with the gas supply port on the side of the crucible cover through the pipeline embedded in the crucible cover. The mouth of the first air intake pipe is located in the crucible. A second air intake pipe is arranged around, and the second air intake pipe communicates with the gas supply port on the side of the crucible cover through the pipeline buried in the crucible cover, and the nozzle of the second air intake pipe extends into the deposition chamber through a small hole at the bottom of the deposition chamber, so that The upper cover of the hole is provided with a hemispherical cover, and the surface of the hemispherical cover is evenly distributed with through holes, and the hemispherical cover extends into the deposition chamber through the central hole at the bottom of the deposition chamber;

Both sides of the deposition chamber are respectively provided with plate-shaped deposition molds horizontally from bottom to top, each set of deposition molds corresponding to the left and right are misaligned up and down, and the deposition molds are evenly distributed with through holes.

The outer sides of the deposition chamber are respectively longitudinally provided with return pipes, and the return pipes are located in the upper heating chamber, the upper end of the return pipe communicates with the upper part of the deposition chamber, and the lower end of the return pipe communicates with the bottom of the deposition chamber.

Preferably, the deposition mold has four pieces, the edges of the first deposition mold and the edges of the second deposition mold arranged from bottom to top have a distance from the axis of the deposition chamber, and the edges of the first deposition mold and the edge of the second deposition mold Coincident with the axis of the deposition chamber.

Preferably, a dust collection tank is provided in the receiving box, a cover plate is provided on the dust collection tank, and a through hole is provided on the cover board, and a heat preservation room is provided outside the lower heating chamber and the upper heating chamber to keep the heat The chamber plays the role of heat preservation, and specifically, insulation materials well known to those skilled in the art can be used; a cooling chamber is provided outside the heat preservation chamber, and the cooling chamber is used to cool down the chemical vapor deposition furnace, and specifically, a water-cooled structure can be used.

Preferably, the side of the deposition mold corresponding to the inner wall of the deposition chamber has a wedge-shaped structure, and the wedge-shaped structure of the deposition mold snaps into the wedge-shaped groove on the inner wall of the deposition chamber. This detachable structure allows the mold size and thickness to be flexibly selected. More flexibility.

The beneficial effects of the utility model:

1. Both the first intake pipe and the second intake pipe of the utility model are fed with hydrogen selenide and argon, that is, hydrogen selenide reacts with zinc vapor in the crucible, and the generated ZnSe and part of unreacted hydrogen selenide and zinc The steam enters the deposition chamber, and then contacts and reacts with hydrogen selenide and argon gas that are passed into the deposition chamber through the second inlet pipe, so that the formation rate of zinc selenide is increased;

2. The hemispherical cover evenly distributed with penetration holes can make the gas entering the deposition chamber from the crucible evenly distributed. This radial flow mode of the outlet can make the gas flow cover the edge of the deposition mold, which is conducive to improving the product conversion rate and uniformity , Raw material utilization rate;

3. Four deposition molds are used. The third and fourth deposition molds can further deposit the undeposited materials of the first and second deposition molds, further improving product conversion rate and raw material utilization rate; and both sides of the deposition mold can be deposited;

4. The return pipe of the deposition chamber makes full use of the airflow in the deposition chamber, thereby improving the conversion rate; the return pipe is inside the upper heating chamber, and the temperature control is stable; the utility model can also be equipped with a heat preservation chamber and a cooling chamber, and the overall structure design is reasonable and symmetrical, Easy to install; in addition, the utility model can also be used to prepare other powders or ZnS crystals.

Description of drawings

Fig. 1 is the sectional structure schematic diagram of the present utility model;

Fig. 2 is the surface structure schematic diagram of crucible lid;

Fig. 3 is the bottom surface structure schematic diagram of crucible lid;

Fig. 4 is a top view structural schematic diagram of a hemispherical cover;

Fig. 5 is a top view structural schematic diagram of a deposition mold;

Fig. 6 is a schematic diagram of the wedge-shaped connection structure between the deposition mold and the inner wall of the deposition chamber;

In the figure: 1-crucible, 2-crucible cover, 3-deposition chamber, 4-receiving box, 5-air duct, 6-lower heating chamber, 7-upper heating chamber, 8-hole, 9-first air intake pipe , 10-second air intake pipe, 11-hemispherical cover, 12-deposition mold, 13-return pipe, 14-dust collection tank, 15-cover plate, 16-insulation chamber, 17-cooling chamber.

Detailed ways

The utility model will be further described below in conjunction with the embodiments and accompanying drawings, but the utility model is not limited in any way. Any transformation or replacement based on the teaching of the utility model belongs to the protection scope of the utility model.

Example 1

As shown in accompanying drawings 1 to 3, the chemical vapor deposition furnace for preparing ZnSe in this embodiment includes a crucible 1, a crucible cover 2, a deposition chamber 3, a receiving box 4, an air guide tube 5, and a crucible 1 arranged in sequence from bottom to top. A lower heating chamber 6 is arranged outside, an upper heating chamber 7 is arranged outside the deposition chamber 3 and the receiving box 4, the top and bottom of the receiving box 4 are respectively provided with gas ports, and the center of the crucible cover 2 is provided with a hole 8, the The hole 8 on the lower surface of the crucible cover 2 is surrounded by a first air intake pipe 9. The first air intake pipe 9 communicates with the gas supply port on the side of the crucible cover 2 through the pipeline embedded in the crucible cover 2. The mouth of the first air intake pipe 9 is located at In the crucible 1, a second air intake pipe 10 is arranged around the hole 8 on the upper surface of the crucible cover 2, and the second air intake pipe 10 communicates with the gas supply port on the side of the crucible cover 2 through the pipeline buried in the crucible cover 2. 10 The nozzle passes through the small hole at the bottom of the deposition chamber 3 and extends into the deposition chamber 3. The upper cover of the hole 8 is provided with a hemispherical cover 11, and the surface of the hemispherical cover 11 is evenly distributed with through holes, and the hemispherical cover 11 passes through. extend into the deposition chamber 3 through the center hole at the bottom of the deposition chamber 3;

Plate-shaped deposition molds 12 are arranged horizontally on both sides of the deposition chamber 3 from bottom to top, and each set of deposition molds 12 corresponding to the left and right is misaligned up and down, and the deposition molds 12 are evenly distributed with penetration holes. .

The outside of the two sides of the deposition chamber 3 is respectively longitudinally provided with a return pipe 13, and the return pipe 13 is located in the upper heating chamber 7, the upper end of the return pipe 13 communicates with the upper part of the deposition chamber 3, and the lower end of the return pipe 13 communicates with the upper part of the deposition chamber 3. connected at the bottom.

Example 2

The present embodiment prepares the chemical vapor deposition furnace of ZnSe on the basis of embodiment 1, and described deposition mold 12 has four pieces, and the first deposition mold edge that arranges from bottom to top, the second deposition mold edge are all connected with deposition chamber 3 There is a distance between the axes, and the edge of the first deposition mold and the edge of the second deposition mold coincide with the axis of the deposition chamber 3; a dust collection tank 14 is provided in the collection box 4, and a cover plate 15 is provided on the dust collection tank 14 , The cover plate 15 is provided with through holes, the outer side of the lower heating chamber 6 and the upper heating chamber 7 is provided with a heat preservation chamber 16 , and the outer side of the heat preservation chamber 16 is provided with a cooling chamber 17 .

The working principle and working process of the utility model: put the solid raw material zinc into the crucible 1, and install the crucible cover 2 and the corresponding gas supply pipeline, as well as the deposition chamber 3, the receiving box 4, the air guide tube 5 and other components, start and chemical gas phase The electrical control system supporting the deposition furnace, and each equipment starts to operate; hydrogen selenide and argon enter the crucible 1 through the first inlet pipe 9, and under the protection of argon, hydrogen selenide reacts with zinc vapor, and the generated ZnSe and some Unreacted hydrogen selenide and zinc vapor enter the deposition chamber 3 through the penetration hole of the hemispherical cover 11, and further contact and react with the protective gas argon and hydrogen selenide gas sent into the deposition chamber 3 through the second inlet pipe 10, The generation rate of zinc selenide is improved; hydrogen selenide is deposited on the deposition mold 12 of deposition chamber 3, and most of zinc selenide is deposited in deposition chamber 3; Reaction: part undeposited zinc selenide and unreacted hydrogen selenide enter in the receiving box 4 along with the air flow, receiving box 4 and dust collection tank 14 collect part zinc selenide dust, all the other uncollected selenium Zinc dust enters the back-end dust collection system from the air duct 5 for further collection, and the exhaust gas enters the exhaust gas treatment system through the vacuum system for treatment, and is discharged out when it reaches the standard.

Claims (3)

1. The chemical vapor deposition furnace for preparing ZnSe comprises a crucible (1), a crucible cover (2), a deposition chamber (3), a receiving box (4) and an air duct (5) which are sequentially arranged from bottom to top, wherein a lower heating chamber (6) is arranged outside the crucible (1), an upper heating chamber (7) is arranged outside the deposition chamber (3) and the receiving box (4), air inlets are respectively and correspondingly arranged at the top and the bottom of the receiving box (4), the chemical vapor deposition furnace is characterized in that a hole (8) is arranged in the center of the crucible cover (2), first air inlet pipes (9) are circumferentially arranged in the hole (8) on the lower surface of the crucible cover (2), the first air inlet pipes (9) are communicated with air supply openings on the side surface of the crucible cover (2) through a pipeline buried in the crucible cover (2), the first air inlet pipe openings (9) are arranged in the crucible cover (1), second air inlet pipes (10) are circumferentially arranged on the periphery of the hole (8) on the upper surface of the crucible cover (2) and are communicated with air supply openings on the side surface of the crucible cover (2), the second air inlet pipes (10) penetrate through the pipeline buried in the crucible cover (2) and penetrate through the hole (3) to the hole (11) uniformly distributed on the side surface of the crucible cover (2), the hemispherical cover (11) passes through the central hole at the bottom of the deposition chamber (3) and stretches into the deposition chamber (3);

the two sides in the deposition chamber (3) are respectively and horizontally provided with plate-shaped deposition dies (12) from bottom to top, each group of deposition dies (12) corresponding to each other is staggered up and down, and the deposition dies (12) are uniformly provided with permeation holes;

and return pipes (13) are longitudinally arranged outside two sides of the deposition chamber (3) respectively, the return pipes (13) are positioned in the upper heating chamber (7), the upper ends of the return pipes (13) are communicated with the upper part in the deposition chamber (3), and the lower ends of the return pipes (13) are communicated with the bottom part in the deposition chamber (3).

2. Chemical vapor deposition furnace for the preparation of ZnSe according to claim 1, characterized in that the deposition mould (12) has four deposition mould edges, the first deposition mould edge and the second deposition mould edge being arranged from bottom to top, each being spaced from the axis of the deposition chamber (3), the first deposition mould edge and the second deposition mould edge being coincident with the axis of the deposition chamber (3).

3. The chemical vapor deposition furnace for preparing ZnSe according to claim 1, wherein a dust collecting tank (14) is arranged in the receiving box (4), a cover plate (15) is arranged on the dust collecting tank (14), a permeation hole is arranged on the cover plate (15), a heat preservation chamber (16) is arranged outside the lower heating chamber (6) and the upper heating chamber (7), and a cooling chamber (17) is arranged outside the heat preservation chamber (16).