CN219267676U - Inverted deep ultraviolet light-emitting diode chip - Google Patents
Inverted deep ultraviolet light-emitting diode chip Download PDFInfo
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- CN219267676U CN219267676U CN202221763494.5U CN202221763494U CN219267676U CN 219267676 U CN219267676 U CN 219267676U CN 202221763494 U CN202221763494 U CN 202221763494U CN 219267676 U CN219267676 U CN 219267676U
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Abstract
The utility model relates to a flip-chip deep ultraviolet light-emitting diode chip, which comprises a deep ultraviolet LED epitaxial wafer, an n electrode (202) and a p electrode (203), wherein the deep ultraviolet LED epitaxial wafer comprises an n-AlGaN layer (103) and a p-AlGaN layer (106), the n electrode (202) is arranged on the n-AlGaN layer (103), the p electrode (203) is arranged on the p-AlGaN layer (106), the dip angle of the side wall of an etching table top of the flip-chip deep ultraviolet light-emitting diode chip is 10-40 degrees, a thickening electrode (204) is arranged on the n electrode (202) and the p electrode (203), and the thickening electrode above the p electrode (203) covers the whole p-AlGaN layer (106) in the flip-chip deep ultraviolet light-emitting diode chip and the upside of the side wall of the etching table top. The method can improve the brightness of the chip by 5-20% on the premise of not increasing the photoetching times and the cost of the chip, and improve the performance of the chip.
Description
Technical Field
The utility model belongs to the technical field of semiconductor chip preparation, relates to a light-emitting diode chip, and particularly relates to a flip deep ultraviolet light-emitting diode chip.
Background
In recent years, with the progress of the global LED industry technology, the LED light-emitting wave band is expanded from the visible light wave band to the ultraviolet and deep ultraviolet wave band. The ultraviolet LED has the functions of photocatalysis, medical phototherapy, health care, air purification, sterilization and the like.
In the prior art, the structure of an epitaxial wafer of a flip-chip deep ultraviolet light emitting diode chip is shown in fig. 1, and the epitaxial wafer comprises a substrate 101, and an AlN layer 102, an n-AlGaN layer 103, a quantum well layer (MQW) 104, a P-Electron Blocking Layer (EBL) 105, a P-AlGaN layer 106 and a P-GaN107 which are sequentially arranged on the substrate 101. The structure of a conventional flip-chip deep ultraviolet light emitting diode chip based on the epitaxial wafer is shown in fig. 2, and the flip-chip deep ultraviolet light emitting diode chip comprises an n electrode 201, a p electrode 202, a thickened electrode 203, a passivation layer 204 and a PAD electrode 205 which are arranged on the epitaxial wafer.
However, the existing flip-chip deep ultraviolet light emitting diode chip has the defects that the side light emission is serious and the p-GaN absorbs light seriously, so that the light transmitted by the p-semiconductor layer without an ohmic contact area and the side wall of the etching table surface cannot be effectively utilized, and the light extraction efficiency is low due to the absorption of the p-electrode.
In view of the above technical drawbacks of the prior art, there is an urgent need to develop a novel flip-chip deep ultraviolet light emitting diode chip.
Disclosure of Invention
In order to overcome the defects in the prior art, the utility model provides a flip-chip deep ultraviolet light-emitting diode chip, which can improve the brightness of the chip by 5-20% and the performance of the chip on the premise of not increasing the photoetching times and the cost of the chip.
In order to achieve the above object, the present utility model provides a flip-chip deep ultraviolet light emitting diode chip, which comprises a deep ultraviolet LED epitaxial wafer, and an n electrode and a p electrode disposed on the deep ultraviolet LED epitaxial wafer, wherein the deep ultraviolet LED epitaxial wafer comprises an n-AlGaN layer and a p-AlGaN layer, the n electrode is disposed on the n-AlGaN layer, the p electrode is disposed on the p-AlGaN layer, the inclination angle of the side wall of the etched mesa of the flip-chip deep ultraviolet light emitting diode chip is 10 ° -40 °, a thickened electrode is disposed on each of the n electrode and the p electrode, and the thickened electrode above the p electrode covers the whole p-AlGaN layer and the upper side of the etched mesa side wall in the flip-chip deep ultraviolet light emitting diode chip.
Preferably, the thickened electrode is a multi-layer structure comprising a highly reflective metal layer and has a total thickness of 500-1200nm.
Preferably, the first layer of the thickened electrode adopts Cr or Ni as a metal adhesion layer and has a thickness of 1-5nm, the second layer adopts one of Al, ag and Rh as a high-reflection metal layer and has a thickness of 50-200nm, the third layer adopts Ni or Ti metal layer and has a thickness of 50-200nm, the fourth layer adopts Pt metal layer and has a thickness of 50-200nm, the fifth layer adopts Au metal layer and has a thickness of 300-600nm, and the sixth layer adopts Ti metal layer and has a thickness of 5nm.
Preferably, a PAD electrode connected with each thickened electrode is arranged above each thickened electrode.
Preferably, the PAD electrode is formed by stacking a plurality of metals and has a total thickness of 4-6um.
Preferably, the uppermost layer of the PAD electrode is formed by adopting Au and Sn vapor deposition, and the thickness of the uppermost layer is 2.5-3.5um.
Preferably, the uppermost layer of the PAD electrode is formed by layering and evaporating Au and Sn, and the thickness ratio of the Au layer to the Sn layer is 6:4.
Preferably, the uppermost layer of the PAD electrode is formed by adopting alloy evaporation of Au and Sn, and the mass ratio of the Au to the Sn in the alloy is 8:2 。
Preferably, a first passivation is arranged between the n electrode and the p electrodeA layer and the thickness of the first passivation layer is
Preferably, a second passivation layer is arranged between the thickened electrodes and between the PAD electrodes, and the thickness of the second passivation layer is
Preferably, the n electrode and the p electrode are made of one or more of Cr, ni, al, ag, au, ti, sn, rh and Pt.
Preferably, the deep ultraviolet LED epitaxial wafer comprises a substrate, and an AlN layer, the n-AlGaN layer, a quantum well layer, a P-type electron blocking layer and the P-AlGaN layer which are sequentially formed on the substrate.
Compared with the prior art, the flip-chip deep ultraviolet light emitting diode chip has one or more of the following beneficial technical effects:
1. the epitaxial wafer without the p-GaN layer is used, so that the p electrode and the p-AlGaN layer form ohmic contact, the absorption of p-GaN to light is removed, and the p electrode is made of a high-reflection metal system, so that the aim of improving brightness is fulfilled.
2. The inclination angle of the side wall of the etching table top, namely, the included angle between the side wall of the etching table top and the horizontal plane is 10 degrees to 40 degrees, the area of the side wall of the etching table top is increased as much as possible, the reflection area of the side wall of the etching table top is increased, more light is emitted, and the luminous efficiency is improved.
3. The high-reflection thickened electrode is arranged above the side wall of the etching table top and the non-ohmic contact area of the p-AlGaN layer, so that light which is originally absorbed or cannot be reflected can be reflected out through the thickened electrode above the side wall of the etching table top and the non-ohmic contact area of the p-AlGaN layer, and the brightness is improved.
4. The method can achieve the purpose of improving the brightness of the chip on the basis of the prior art and on the premise of not increasing the process cost.
Drawings
Fig. 1 is a schematic structural diagram of an epitaxial wafer used for flip-chip mounting of a deep ultraviolet light emitting diode chip.
Fig. 2 is a schematic structural diagram of a conventional flip-chip deep ultraviolet light emitting diode chip.
Fig. 3 is a schematic structural diagram of an epitaxial wafer used for flip-chip deep ultraviolet light emitting diode chip according to the present utility model.
Fig. 4 is a schematic structural view of an epitaxial wafer after an n-electrode mesa and a p-electrode mesa are prepared.
Fig. 5 is a schematic structural view of an epitaxial wafer after n-electrode and p-electrode are prepared thereon.
Fig. 6 is a schematic structural diagram of the epitaxial wafer after the thickened electrode is prepared.
Fig. 7 is a schematic structural diagram of a second passivation layer prepared on an epitaxial wafer and subjected to photolithography.
Fig. 8 is a schematic structural diagram of a flip-chip deep ultraviolet light emitting diode chip according to the present utility model.
Detailed Description
The utility model is further illustrated by the following examples in conjunction with the accompanying drawings, which are not to be construed as limiting the scope of the utility model.
Aiming at the problem of low light extraction efficiency of the existing flip-chip deep ultraviolet light-emitting diode chip, the utility model provides the flip-chip deep ultraviolet light-emitting diode chip which can improve the brightness of the chip by 5-20% and the performance of the chip on the premise of not increasing the photoetching times and the cost of the chip.
Fig. 8 shows a schematic structural diagram of a flip-chip deep ultraviolet light emitting diode chip of the present utility model. As shown in fig. 8, the flip-chip deep ultraviolet light emitting diode chip of the present utility model includes a deep ultraviolet LED epitaxial wafer, and an n electrode 202 and a p electrode 203 disposed on the deep ultraviolet LED epitaxial wafer.
As shown in fig. 3, the deep ultraviolet LED epitaxial wafer includes an n-AlGaN layer 103 and a p-AlGaN layer 106.
Preferably, the deep ultraviolet LED epitaxial wafer includes a substrate 101, and an AlN layer 102, the n-AlGaN layer 103, a quantum well layer 104, a P-type electron blocking layer 105, and the P-AlGaN layer 106 sequentially formed on the substrate 101.
Wherein the n-electrode 202 is disposed on the n-AlGaN layer 103. The p-electrode 203 is disposed on the p-AlGaN layer 106.
More preferably, the n-electrode 202 and the p-electrode 203 are made of a highly reflective metal system, for example, one or more of Cr, ni, al, ag, au, ti, sn, rh and Pt.
In this way, the flip-chip deep ultraviolet light emitting diode chip of the utility model uses the epitaxial wafer without the p-GaN layer, and makes the p-electrode 203 and the p-AlGaN layer 106 form ohmic contact, so that the absorption of p-GaN to light is removed, and the p-electrode 203 is made of a high-reflection metal system, thereby achieving the purpose of improving brightness.
In the utility model, the dip angle of the side wall of the etching table top of the flip-chip deep ultraviolet light emitting diode chip is 10-40 degrees. Therefore, the inclination angle of the side wall of the etching table top, namely, the included angle between the side wall of the etching table top and the horizontal plane is 10 degrees to 40 degrees, the area of the side wall of the etching table top is increased as much as possible, the reflection area of the side wall of the etching table top is increased, more light is obtained, and the luminous efficiency is improved.
A thickening electrode 204 is disposed on both the n-electrode 202 and the p-electrode 203. Wherein, the thickened electrode above the p electrode 203 covers the whole p-AlGaN layer 106 in the flip-chip deep ultraviolet light emitting diode chip and the side wall of the etching table top. That is, the thickened electrode 204 is covered over the entire p-AlGaN layer 106 and over the etched mesa sidewalls.
In this way, by providing the thickened electrodes on the non-ohmic contact region of the p-AlGaN layer 106 and on the side wall of the etched mesa, the light which is not absorbed or reflected originally can be reflected by the thickened electrodes above the side wall of the etched mesa and the non-ohmic contact region of the p-AlGaN layer, thereby improving the brightness.
In the present utility model, the thickened electrode 204 is a multi-layered structure including a highly reflective metal layer and has a total thickness of 500-1200nm. The high-reflection metal layer is contained, so that the high-reflection metal layer has strong reflection capability, and light which is originally absorbed or cannot be reflected can be better reflected through the side wall of the etching table surface and the thickened electrode above the non-ohmic contact area of the p-AlGaN layer.
Preferably, the first layer of the thickened electrode 204 adopts Cr or Ni as a metal adhesion layer and has a thickness of 1-5nm. The second layer adopts one of Al, ag and Rh as a high-reflection metal layer and has a thickness of 50-200nm. The third layer adopts Ni or Ti metal layer and has a thickness of 50-200nm. The fourth layer adopts Pt metal layer and has a thickness of 50-200nm. The fifth layer adopts Au metal layer and has a thickness of 300-600nm. The sixth layer adopts Ti metal layer and has a thickness of 5nm.
Above each of the thickened electrodes 204 is a PAD electrode 206 connected thereto. Through the PAD electrode 206, an external power supply is facilitated to be connected, so that power is conveniently supplied thereto to facilitate light emission.
Preferably, the PAD electrode 206 is stacked from multiple metals and has a total thickness of 4-6um. For example, the PAD electrode may be formed by stacking a plurality of metals such as Cr, ni, ti, pt, au, sn, wherein the uppermost layer is made of Au and Sn metals, and is used for subsequent packaging of the eutectic.
Specifically, the uppermost layer of the PAD electrode 206 is formed by Au and Sn vapor deposition, and has a thickness of 2.5-3.5um.
The uppermost layer of the PAD electrode 206 may be formed by layering Au and Sn, and the ratio of the thickness of the Au layer to the thickness of the Sn layer is 6:4.
Alternatively, the uppermost layer of the PAD electrode 206 may be formed by vapor deposition of an alloy of Au and Sn, where the mass ratio of Au to Sn is 8:2 。
In the present utility model, it is preferable that a first passivation layer 201 is provided between the n electrode 202 and the p electrode 203 and the first passivation layer 201 has a thickness of
The first passivation layer 201 may be a silicon oxide layer or a silicon nitride layer.
More preferably, the thickened electrode 204A second passivation layer 205 is arranged between the PAD electrodes 206 and the thickness of the second passivation layer 205 is
The second passivation layer 205 may be a silicon oxide layer, a silicon nitride layer, or an aluminum oxide layer.
By providing the first passivation layer 201 and the second passivation layer 205, electric leakage between the electrodes due to contact can be prevented, and a protective effect can be provided.
The following describes a method for manufacturing the flip-chip deep ultraviolet light emitting diode chip of the present utility model, so that a person skilled in the art can manufacture the flip-chip deep ultraviolet light emitting diode chip according to the description of the present utility model.
The preparation method of the flip-chip deep ultraviolet light-emitting diode chip comprises the following steps:
1. and preparing the deep ultraviolet LED epitaxial wafer.
Similar to the prior art, in preparing a deep ultraviolet LED epitaxial wafer, it is necessary to provide a substrate 101 and sequentially grow an AlN layer 102, an n-AlGaN layer 103, a quantum well layer 104, a P-electron blocking layer 105, and a P-AlGaN layer 106 on the substrate 101, thereby preparing a deep ultraviolet LED epitaxial wafer as shown in fig. 3.
The deep ultraviolet LED epitaxial wafer prepared by the utility model has no p-GaN layer, so that the absorption of p-GaN to light is removed, and the aim of improving the brightness is fulfilled.
2. An n-electrode mesa and a p-electrode mesa were prepared.
And etching the deep ultraviolet LED epitaxial wafer downwards to obtain an n-electrode table top and a p-electrode table top, as shown in fig. 4. Wherein the n-electrode mesa is located on the n-AlGaN layer 103. The p-electrode mesa is located on the p-AlGaN layer 106 and the dip angle of the etched mesa sidewalls is 10 ° -40 °.
In the present utility model, existing photolithography and ICP etching techniques can be used to prepare the n-electrode mesa and the p-electrode mesa.
The dip angle of the side wall of the etching table top of the inverted deep ultraviolet light emitting diode chip is 10-40 degrees. Therefore, the inclination angle of the side wall of the etching table top, namely, the included angle between the side wall of the etching table top and the horizontal plane is 10 degrees to 40 degrees, the area of the side wall of the etching table top is increased as much as possible, the reflection area of the side wall of the etching table top is increased, more light is obtained, and the luminous efficiency is improved.
3. An n-electrode and a p-electrode were prepared.
First, the first passivation layer 201 is entirely deposited on the basis of the second step. In particular, the passivation layer film can be deposited to a thickness of
As the first passivation layer 201.
Then, a portion of the first passivation layer 201 is removed so as to expose a portion of the surface of the n-AlGaN layer 103 and a portion of the surface of the p-AlGaN layer 106. Specifically, two holes may be formed on the first passivation layer 201 by photolithography, BOE wet etching, or the like, such that a portion of the surface of the n-AlGaN layer 103 and a portion of the surface of the p-AlGaN layer 106 are exposed, respectively.
Next, an n-electrode 202 is deposited on the surface of the exposed portion of the n-AlGaN layer 103, and a p-electrode 203 is deposited on the surface of the exposed portion of the p-AlGaN layer 106.
Specifically, the n electrode 202 may be vapor deposited on the surface of the exposed portion of the n-AlGaN layer 103 and the p electrode 203 may be vapor deposited on the surface of the exposed portion of the p-AlGaN layer 106 using a metal electrode vapor deposition technique, as shown in fig. 5.
Preferably, after evaporating the N-electrode 202, the N-electrode 202 is made to be N 2 And (3) carrying out high-temperature annealing in atmosphere, wherein the annealing temperature is 750-950 ℃ and the annealing time is 30-120s. By annealing, ohmic contact is facilitated to be formed between the n-electrode 202 and the n-AlGaN layer 103.
Similarly, after the p-electrode 203 is evaporated, the p-electrode 203 is formed by N 2 Or annealing in air atmosphere, wherein the annealing temperature is 450-700 ℃ and the annealing time is 100-300s. By annealing, the annealing is facilitated between the p-electrode 203 and the p-AOhmic contacts are formed between the lGaN layers 106.
4. And preparing a thickened electrode.
In the present utility model, the thickened electrodes 204 may be vapor deposited on the surfaces of the n-electrode 202 and the p-electrode 203, respectively, by photolithography and metal electrode vapor deposition.
As shown in fig. 6, the thickened electrode above the p-electrode 203 covers the entire p-AlGaN layer 106 in the flip-chip deep uv led chip and the side walls of the etched mesa. That is, the thickened points 204 are covered both over the entire p-AlGaN layer 106 and over the etched mesa sidewalls.
In this way, by evaporating the thickened electrode 204 on the non-ohmic contact region of the p-AlGaN layer 106 and on the side wall of the etched mesa, the light which is not absorbed or reflected originally can be reflected by the thickened electrode above the side wall of the etched mesa and the non-ohmic contact region of the p-AlGaN layer, thereby improving the brightness.
In the present utility model, the thickened electrode 204 is a multi-layered structure including a highly reflective metal layer and has a total thickness of 500-1200nm. The high-reflection metal layer is contained, so that the high-reflection metal layer has strong reflection capability, and light which is originally absorbed or cannot be reflected can be better reflected through the side wall of the etching table surface and the thickened electrode above the non-ohmic contact area of the p-AlGaN layer.
Preferably, the first layer of the thickened electrode 204 adopts Cr or Ni as a metal adhesion layer and has a thickness of 1-5nm. The second layer adopts one of Al, ag and Rh as a high-reflection metal layer and has a thickness of 50-200nm. The third layer adopts Ni or Ti metal layer and has a thickness of 50-200nm. The fourth layer adopts Pt metal layer and has a thickness of 50-200nm. The fifth layer adopts Au metal layer and has a thickness of 300-600nm. The sixth layer adopts Ti metal layer and has a thickness of 5nm.
5. A second passivation layer is prepared.
A second passivation layer 205 is deposited entirely on the basis of step four. Then, as shown in fig. 7, a portion of the second passivation layer 205 is removed so as to expose a portion of the surface of the thickened electrode 204.
In particular, the passivation layer film can be deposited to a thickness of
As the second passivation layer 205. And, a portion of the second passivation layer 205 thickened the electrode surface is removed by photolithography and ICP dry etching.
6. And preparing the PAD electrode.
A PAD electrode 206 connected to the thickened electrode 204 is vapor deposited on the surface of the exposed portion of the thickened electrode 204.
Specifically, the PAD electrode 206 may be evaporated by photolithography and metal evaporation.
After the PAD electrode 206 is prepared, the flip-chip deep ultraviolet light emitting diode chip of the present utility model as shown in fig. 8 is fabricated.
As can be seen from the above preparation process, the preparation method of the flip-chip deep ultraviolet light emitting diode chip of the utility model uses the existing preparation process. Therefore, the method can achieve the purpose of improving the brightness of the chip on the basis of the prior art and without increasing the process cost.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present utility model, and are not intended to limit the scope of the present utility model. Modifications and equivalent substitutions can be made by those skilled in the art based on the present teachings without departing from the spirit and scope of the present teachings.
Claims (8)
1. The flip-chip deep ultraviolet light-emitting diode chip comprises a deep ultraviolet LED epitaxial wafer, and an n electrode (202) and a p electrode (203) which are arranged on the deep ultraviolet LED epitaxial wafer, and is characterized in that the deep ultraviolet LED epitaxial wafer comprises an n-AlGaN layer (103) and a p-AlGaN layer (106), the n electrode (202) is arranged on the n-AlGaN layer (103), the p electrode (203) is arranged on the p-AlGaN layer (106), the inclination angle of the side wall of an etching table top of the flip-chip deep ultraviolet light-emitting diode chip is 10-40 degrees, and a thickening electrode (204) is arranged on each of the n electrode (202) and the p electrode (203) and covers the upper part of the whole p-AlGaN layer (106) and the upper part of the side wall of the etching table top in the flip-chip deep ultraviolet light-emitting diode chip.
2. The flip-chip deep ultraviolet light emitting diode chip according to claim 1, wherein the thickened electrode (204) is a multilayer structure comprising a highly reflective metal layer and has a total thickness of 500-1200nm.
3. The flip-chip deep ultraviolet light emitting diode chip according to claim 2, wherein the first layer of the thickened electrode (204) adopts Cr or Ni as a metal adhesion layer and has a thickness of 1-5nm, the second layer adopts one of Al, ag and Rh as a highly reflective metal layer and has a thickness of 50-200nm, the third layer adopts Ni or Ti metal layer and has a thickness of 50-200nm, the fourth layer adopts Pt metal layer and has a thickness of 50-200nm, the fifth layer adopts Au metal layer and has a thickness of 300-600nm, and the sixth layer adopts Ti metal layer and has a thickness of 5nm.
4. The flip-chip deep ultraviolet light emitting diode chip according to claim 1, wherein a PAD electrode (206) connected to each thickened electrode (204) is provided above the thickened electrode.
5. The flip-chip deep ultraviolet light emitting diode chip of claim 4, wherein the PAD electrode (206) is stacked from a plurality of metals and has a total thickness of 4-6um.
6. The flip-chip deep ultraviolet light emitting diode chip according to claim 1, wherein a first passivation layer (201) is disposed between the n-electrode (202) and the p-electrode (203) and the thickness of the first passivation layer (201) is 3000-10000 a.
7. The flip-chip deep ultraviolet light emitting diode chip according to claim 4, wherein a second passivation layer (205) is provided between the thickened electrodes (204) and between the PAD electrodes (206) and the second passivation layer (205) has a thickness of 8000-15000 a.
8. The flip-chip deep ultraviolet light emitting diode chip according to claim 1, wherein the deep ultraviolet LED epitaxial wafer comprises a substrate (101), and an AlN layer (102), the n-AlGaN layer (103), a quantum well layer (104), a P-type electron blocking layer (105) and the P-AlGaN layer (106) sequentially formed on the substrate (101).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202221763494.5U CN219267676U (en) | 2022-07-07 | 2022-07-07 | Inverted deep ultraviolet light-emitting diode chip |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202221763494.5U CN219267676U (en) | 2022-07-07 | 2022-07-07 | Inverted deep ultraviolet light-emitting diode chip |
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| CN219267676U true CN219267676U (en) | 2023-06-27 |
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| CN202221763494.5U Active CN219267676U (en) | 2022-07-07 | 2022-07-07 | Inverted deep ultraviolet light-emitting diode chip |
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