CN219107401U

CN219107401U - Radio frequency power amplifying circuit and radio frequency front end module

Info

Publication number: CN219107401U
Application number: CN202223101653.8U
Authority: CN
Inventors: 李文豪; 刘双; 江昀隆; 曹原; 倪建兴
Original assignee: Radrock Shenzhen Technology Co Ltd
Current assignee: Radrock Shenzhen Technology Co Ltd
Priority date: 2022-11-22
Filing date: 2022-11-22
Publication date: 2023-05-30
Anticipated expiration: 2032-11-22

Abstract

The application discloses a radio frequency power amplifying circuit and a radio frequency front-end module. The radio frequency power amplifying circuit comprises a power amplifying module, a balun module and a first capacitor. The balun module comprises a first coil and a second coil which are mutually coupled, and the first coil is connected with the power amplification module. The second coil comprises a first sub-coil and a second sub-coil, one end of the first sub-coil is connected with one end of the second sub-coil to form a common end, and the other end of the second sub-coil is grounded. One end of the first capacitor is connected with the common end, and the other end of the first capacitor is grounded. Therefore, the output end of the balun module is provided with the first resonance formed by the parallel connection of the first capacitor and the second sub-coil, and the first resonance can inhibit part of harmonic signals (especially higher harmonic signals) in the first radio frequency signals, so that the signal transmission quality of the radio frequency power amplifying circuit is ensured.

Description

Radio frequency power amplifying circuit and radio frequency front end module

Technical Field

The present application relates to the field of radio frequency technologies, and in particular, to a radio frequency power amplifying circuit and a radio frequency front end module.

Background

In wireless communication systems, radio frequency front-end circuits often include low noise amplifiers, power amplifiers, and balun (i.e., balun) and the like. The balun is connected with the signal output end of the power amplifier and is used for synthesizing the signals amplified by the amplitude of the power amplifier and then outputting radio frequency signals.

However, in the actual working process of the power amplifier (for example, differential amplifier), there is a problem that higher harmonics in the signal cannot be well suppressed, so that certain higher harmonics still exist in the radio frequency signal output by the balun, which affects the signal transmission quality of the radio frequency signal.

Disclosure of Invention

The embodiment of the application provides a radio frequency power amplifying circuit and a radio frequency front-end module.

According to a first aspect of the present application, an embodiment of the present application provides a radio frequency power amplifying circuit, which includes a power amplifying module, a balun module, and a first capacitor. The balun module is connected with the power amplification module and is used for receiving a first radio frequency signal sent by the power amplification module; the balun module comprises a first coil and a second coil which are mutually coupled, and the first coil is connected with the power amplification module. The second coil comprises a first sub-coil and a second sub-coil, one end of the first sub-coil is connected with one end of the second sub-coil to form a common end, and the other end of the first sub-coil is used for outputting a second radio frequency signal; the other end of the second sub-coil is grounded. One end of the first capacitor is connected with the common end, and the other end of the first capacitor is grounded.

Wherein in some alternative embodiments, the first capacitance and the equivalent inductance of the first sub-coil form a first resonance, and a first ratio between a first resonance frequency of the first resonance and a signal frequency of the fundamental wave signal in the first radio frequency signal is greater than or equal to 2.

Wherein in some alternative embodiments the first ratio is equal to 3.

Wherein in some alternative embodiments, the ratio between the equivalent inductance value of the second sub-coil and the equivalent inductance value of the first sub-coil is less than or equal to 0.25.

Wherein in some alternative embodiments, the equivalent inductance value of the second sub-coil is less than or equal to 100pH.

Wherein in some alternative embodiments, the first coil includes a first input and a second input; the power amplification module comprises a first transistor and a second transistor, the first transistor and the second transistor form a differential amplification circuit, the first transistor is connected with a first input end, and the second transistor is connected with a second input end.

Wherein in some alternative embodiments, the first transistor is a first bipolar transistor and the second transistor is a second bipolar transistor; the base electrode of the first transistor is used for inputting a first differential signal, the collector electrode of the first transistor is connected with the first input end, and the emitter electrode of the first transistor is grounded; the base electrode of the second transistor is used for inputting a second differential signal, the collector electrode of the second transistor is connected with the second input end, and the emitter electrode of the second transistor is grounded; the second differential signal is opposite in phase to the first differential signal.

Wherein, in some alternative embodiments, the radio frequency power amplifying circuit further comprises a first resonance module and a second resonance module, the first resonance module is connected with the first input terminal, and the second resonance module is connected with the second input terminal; the first resonance module forms second resonance, and a second ratio between a second resonance frequency of the second resonance and a signal frequency of a fundamental wave signal in the first radio frequency signal is different from the first ratio; the second resonance module forms a third resonance, and the third resonance frequency of the third resonance is the same as the second resonance frequency.

In some alternative embodiments, the first resonance module includes a first inductor and a second capacitor, where one end formed by connecting the first inductor and the second capacitor in series is connected to the first input end, and the other end is grounded; the second resonance module comprises a second inductor and a third capacitor, one end formed by connecting the second inductor and the third capacitor in series is connected with the second input end, and the other end is grounded.

According to a first aspect of the present application, an embodiment of the present application provides a radio frequency front end module, where the radio frequency front end module includes the radio frequency power amplifying circuit described above.

The radio frequency power amplifying circuit and the radio frequency front end module provided with the radio frequency power amplifying circuit provided by the embodiment of the application comprise a power amplifying module, a balun module and a first capacitor. The first coil of the balun module is connected with the power amplification module and is used for receiving the first radio frequency signal sent by the power amplification module. The second coil of the balun module comprises a first sub-coil and a second sub-coil, one end of the second sub-coil is connected with one end of the first sub-coil to form a common end, and the other end of the second sub-coil is grounded. One end of the first capacitor is connected with the common end, and the other end of the first capacitor is grounded.

Therefore, the output end of the balun module is provided with the first resonance formed by the parallel connection of the first capacitor and the second sub-coil, and the first resonance can inhibit part of harmonic signals (especially higher harmonic signals) in the first radio frequency signals, so that the signal transmission quality of the radio frequency power amplifying circuit is ensured. For example, by configuring the harmonic frequency 3f such that the resonance frequency of the first resonance is the third harmonic ₀ (wherein f ₀ Signal frequency of the fundamental wave signal in the first radio frequency signal), the third harmonic can be suppressed. In addition, since the first resonance borrows a part of the coil (i.e., the second sub-coil) of the second coil, the first resonance can be realized only by switching in the first capacitor,the hardware cost of the radio frequency power amplifying circuit is saved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural diagram of a radio frequency power amplifying circuit according to an embodiment of the present application.

Fig. 2 is a schematic diagram of another configuration of the rf power amplifying circuit shown in fig. 1.

Fig. 3 is a schematic diagram of another configuration of the rf power amplifying circuit shown in fig. 1.

Fig. 4 is a schematic diagram of still another configuration of the rf power amplifying circuit shown in fig. 1.

Fig. 5 is a schematic diagram of still another configuration of the rf power amplifying circuit shown in fig. 1.

Fig. 6 is a schematic structural diagram of a rf front-end module according to an embodiment of the present disclosure.

Detailed Description

In order to enable those skilled in the art to better understand the present application, the following description will make clear and complete descriptions of the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.

Referring to fig. 1, in the present embodiment, the rf power amplifying circuit 100 may include a power amplifying module 120, a balun module 140 and a first capacitor 160. The balun module 140 is connected to the power amplifying module 120, and is configured to receive the first radio frequency signal sent by the power amplifying module 120. The balun module 140 may include a first coil 141 and a second coil 143 coupled to each other, wherein the first coil 141 and the power amplifying module 120 are connected. The second coil 143 includes a first sub-coil 1432 and a second sub-coil 1434, one end of the first sub-coil 1432 and one end of the second sub-coil 1434 are connected to form a common terminal 1436, the other end of the first sub-coil 1432 is used for outputting a second radio frequency signal, and the other end of the second sub-coil 1434 is grounded. One end of the first capacitor 160 is connected to the common terminal 1436, and the other end is grounded.

Therefore, the output end of the balun module 140 in the present application is provided with a first resonance formed by connecting the first capacitor 160 and the second sub-coil 1434 in parallel, and the first resonance can inhibit part of harmonic signals (especially higher harmonic signals) in the first radio frequency signal, so as to ensure the signal transmission quality of the radio frequency power amplifying circuit. For example, by configuring the harmonic frequency 3f such that the resonance frequency of the first resonance is the third harmonic ₀ (wherein f ₀ Signal frequency of the fundamental wave signal in the first radio frequency signal), the third harmonic can be suppressed. In addition, since the first resonance uses a part of the second coil 143 (i.e., the second sub-coil 1434), the first resonance can be realized only by connecting the first capacitor 160, and the hardware cost of the rf power amplifying circuit 100 is saved.

The various blocks in the rf power amplifying circuit 100 are described in detail below.

The BALUN module 140 may include a BALUN (BALUN) for converting and synthesizing the signals to output radio frequency signals. In this embodiment, the balun module 140 is connected to the signal output end of the power amplification module 120, and is configured to receive the first radio frequency signal sent by the power amplification module 120. Specifically, the first rf signal is determined by the communication device to which the rf power amplification circuit 100 is applied. For example, if the communication device operates in the N77 frequency band, the signal frequency of the first radio frequency signal may be 3.3GHz to 4.2GHz; if the communication equipment works in the N78 frequency band, the signal frequency of the first radio frequency signal can be 3.3 GHz-3.8 GHz; if the communication device operates in the N79 frequency band, the signal frequency of the first radio frequency signal may be 4.5GHz to 5GHz. The signal frequency of the first radio frequency signal is not particularly limited in this embodiment.

It should be noted that, the "signal frequency of the first rf signal" is to be understood as "signal frequency of the fundamental wave signal in the first rf signal", but the power amplification module 120 cannot well inhibit the higher harmonics (e.g., the third harmonic, the fifth harmonic, etc.) in the first rf signal, so that the higher harmonic signal may be doped in the first rf signal, and if the higher harmonic signal is not inhibited, the signal transmission quality of the rf power amplification circuit 100 may be reduced.

In this embodiment, the balun module 140 may include a first coil 141 and a second coil 143 coupled to each other. In some possible embodiments, the first coil 141 and the second coil 143 may be wound on the same magnetic conductor (e.g., ferrite core) to achieve "electromagnetic coupling. In other possible embodiments, the first coil 141 and the second coil 143 may be coupled to each other by direct coupling, inductive coupling, capacitive coupling, or the like, and the coupling manner between the first coil 141 and the second coil 143 is not specifically limited in this embodiment.

In this embodiment, the first coil 141 is connected to the power amplifying module 120, and is configured to receive the first radio frequency signal sent by the power amplifying module 120. One end of the second coil 143 is used for outputting a second radio frequency signal, and the other end is grounded. Specifically, the second coil 143 includes a first sub-coil 1432 and a second sub-coil 1434, wherein one end of the first sub-coil 1432 and one end of the second sub-coil 1434 are connected to form a common terminal 1436, the other end of the first sub-coil 1432 is used for outputting a second radio frequency signal, and the other end of the second sub-coil 1434 is grounded.

The first capacitor 160 may be a patch capacitor, a cartridge capacitor, or the like. One end of the first capacitor 160 is connected to the common terminal 1436, and the other end is grounded. That is, the first capacitor 160 and the second sub-coil 1434 are connected in parallel, and thus, the equivalent inductance of the first capacitor 160 and the second sub-coil 1434 may form a first resonance (i.e., LC parallel resonance) when the radio frequency power amplifying circuit 100 operates. When the first resonance frequency of the first resonance is substantially the same as the signal frequency of the higher harmonics in the first radio frequency signal, the higher harmonics can be suppressed. Specifically, a first ratio between a first resonance frequency of the first resonance and a signal frequency of the fundamental wave signal in the first radio frequency signal may be greater than or equal to 2. For example, the first ratio may be 2, 3, 4, 5, etc.

In some possible embodiments, the first ratio between the first resonant frequency of the first resonance and the signal frequency of the fundamental wave signal in the first radio frequency signal may be equal to 3. At this time, the first resonance frequency of the first resonance is 3f ₀ Wherein f ₀ Is the signal frequency of the fundamental wave signal in the first radio frequency signal. In this case, when the third harmonic signal (i.e., the frequency is 3f ₀ Through the parallel resonant cavity (LCtank) formed by the parallel connection of the first capacitor 160 and the second sub-coil 1434), the parallel resonant cavity can be regarded as a band-stop filter, and thus suppression of the third harmonic signal can be achieved when the third harmonic signal passes through the band-stop filter. In addition, when the fundamental wave signal in the first radio frequency signal passes through the parallel resonant cavity, the parallel resonant cavity can be equivalent to a low resistance or only show the characteristic of the equivalent inductance of the second sub-coil 1434, so that the impedance and the insertion loss of the fundamental wave signal are not influenced by the parallel resonant cavity, and the normal output of the fundamental wave signal is ensured.

In the present embodiment, the ratio between the equivalent inductance value of the second sub-coil 1434 and the equivalent inductance value of the first sub-coil 1432 may be less than or equal to 0.25. Since the first sub-coil 1432 and the second sub-coil 1434 can be regarded as two parts of the second coil 143, taking the equivalent inductance value of the second coil 143 as an example, the equivalent inductance value of the first sub-coil 1432 is greater than or equal to 400pH, and the equivalent inductance value of the second sub-coil 1434 is less than or equal to 100pH. If the second coil 143 is wound more uniformly around the magnetic conductor, the length of the second sub-coil 1434 is not more than one fifth of the total length of the second coil 143, i.e., the second sub-coil 1434 occupies only a short section of the second coil 143. Therefore, the equivalent inductance value of the second sub-coil 1434 is smaller, and in the present embodiment, the equivalent inductance value of the second sub-coil 1434 is smaller than or equal to 100pH.

Specifically, in the case where the equivalent inductance value of the second sub-coil 1434 is determined, the capacitance value of the first capacitor 160 can be calculated based on the following formula.

Where f is the resonant frequency, f=3f in the case where the first ratio is equal to 3 ₀ . L is the equivalent inductance value of the second sub-coil 1434. C is the capacitance of the first capacitor 160. Therefore, a developer can determine the capacitance value of the corresponding first capacitor 160 according to the harmonic frequency of the higher harmonic (e.g., the third harmonic) that is actually needed to be suppressed, and the capacitance value of the first capacitor 160 is not particularly limited in this embodiment.

Referring to fig. 2 and 3, in the present embodiment, the first coil 141 may include a first input 1412 and a second input 1414. The first coil 141 is connected to the power amplification module 120 through a first input 1412 and a second input 1414. Specifically, the power amplifying module 120 may include a first transistor 121 and a second transistor 123. The first transistor 121 and the second transistor 123 form a differential amplifying circuit, the first transistor 121 is connected to the first input terminal 1412, and the second transistor 123 is connected to the second input terminal 1414. Since the power amplifying module 120 in the present embodiment is a differential amplifying circuit formed by the first transistor 121 and the second transistor 123, that is, the input signal of the power amplifying module 120 is a differential signal pair. The differential signal pair may include a first differential signal and a second differential signal having the same amplitude and opposite phases. The power amplification module 120 is capable of amplifying the magnitudes of the first differential signal and the second differential signal, and inputting the first differential signal and the second differential signal with the amplified magnitudes as the first rf signal to the balun module 140. In addition, the power amplification module 120 can overcome zero drift and stabilize a static working point, so that the working stability of the radio frequency power amplification circuit 100 is ensured.

Specifically, the first transistor 121 and the second transistor 123 are the same in type and model. Illustratively, the first and

second transistors

121 and 123 may be bipolar transistors (Bipolar Junction Transistor, BJTs), field effect transistors (Field Effect Transistor, FETs), insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBTs), and the like. Here, the first transistor 121 and the second transistor 123 are both bipolar transistors. In the embodiment shown in fig. 3, the first transistor 121 is a first bipolar transistor, the second transistor 123 is a second bipolar transistor, and the first transistor 121 and the second transistor 123 are of the same type and are NPN bipolar transistors. Specifically, the base of the first transistor 121 is used for inputting a first differential signal, the collector of the first transistor 121 is connected to the first input terminal 1412, the first differential signal after amplitude amplification is sent to the first input terminal 1412, and the emitter of the first transistor 121 is grounded. The base of the second transistor 123 is used for inputting a second differential signal, the collector of the second transistor 123 is connected to the second input 1414, the second differential signal after amplitude amplification is sent to the second input 1414, and the emitter of the second transistor 123 is grounded.

In the embodiment shown in fig. 3, the collector of the first transistor 121 and the collector of the second transistor 123 are also connected to a power supply VCC, respectively. The power supply VCC is a circuit voltage (Voltage To Current Converter, VCC), that is, a supply voltage of the first transistor 121 and the second transistor 123. In the present embodiment, the power source VCC is used to supply the operating voltage to the first transistor 121 and the second transistor 123, respectively. Specifically, the voltage value of the power supply VCC may be less than or equal to 12V, for example, 12V, 5V, 1.5V, or the like.

Referring to fig. 3 and 4, the power amplification module 120 may further include a first collector inductance L1 and a second collector inductance L2. One end of the first collector inductance L1 is connected to the collector of the first transistor 121, and the other end is connected to the power supply VCC. One end of the second collector inductance L2 is connected to the collector of the second transistor 123, and the other end is connected to the power supply VCC. Specifically, the inductance values of the first collector inductance L1 and the second collector inductance L2 are the same for improving the circuit stability of the differential amplification circuit constituted by the first transistor 121 and the second transistor 123.

Referring to fig. 4, the power amplifying module 120 may further include a first resistor R1 and a second resistor R2. One end of the first resistor R1 is connected to the emitter of the first transistor 121, and the other end is grounded. One end of the second resistor R2 is connected to the emitter of the second transistor 123, and the other end is grounded. Specifically, the first resistor R1 and the second resistor R2 have the same resistance and are both emitter resistors, the first resistor R1 is used for limiting the emitter current of the first transistor 121, and the second resistor R2 is used for limiting the emitter current of the second transistor 123, so as to improve the circuit stability of the differential amplifying circuit formed by the first transistor 121 and the second transistor 123.

In some possible embodiments, the first transistor 121 and the second transistor 123 may also be Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). The first transistor 121 may be a first mosfet, hereinafter referred to as a "first fet"; the second transistor 123 may be a second metal oxide semiconductor field effect transistor, hereinafter simply referred to as "second field effect transistor". The first field effect transistor and the second field effect transistor have the same model and can be N-channel metal oxide semiconductor field effect transistors. Specifically, the gate of the first field effect transistor is used for inputting a first differential signal, the source of the first field effect transistor is connected with the first input end 1412, the first differential signal after amplitude amplification is sent to the first input end 1412, and the drain of the first field effect transistor is grounded. The gate of the second field effect transistor is used for inputting a second differential signal, the source of the second field effect transistor is connected with the second input end 1414, the second differential signal with amplified amplitude is sent to the second input end 1414, and the drain electrode of the second field effect transistor is grounded.

Referring to fig. 5, in the present embodiment, the rf power amplifying circuit 100 may further include a first resonant module 170, where the first resonant module 170 is connected to the first input 1412. The first resonant module 170 may be formed ofThe second resonance, the second ratio between the second resonance frequency of the second resonance and the signal frequency of the fundamental wave signal in the first radio frequency signal is different from the first ratio. Illustratively, the second ratio may be 2 and the first ratio may be 3. In this case, the second resonance frequency of the second resonance is 2f ₀ That is, when there is a second harmonic in the first differential signal, the first resonance module 170 can suppress the second harmonic before the first differential signal is input to the balun module 140. Specifically, the first resonant module 170 may include a first inductor 174 and a second capacitor 172, where one end formed by connecting the first inductor 174 and the second capacitor 172 in series is connected to the first input 1412, and the other end is grounded. Therefore, the second resonance in the present embodiment is a series resonance formed by the first inductor 174 and the second capacitor 172, and specifically, the inductance value of the first inductor 174 and the capacitance value of the second capacitor 172 satisfy the following formula.

Where f is the resonant frequency, f=2f in the case where the second ratio is equal to 2 ₀ . L is the inductance value of the first inductor 174. C is the capacitance of the second capacitor 172. Therefore, the developer can determine the inductance value of the corresponding first inductor 174 and the capacitance value of the second capacitor 172 according to the harmonic frequency of the higher harmonic (for example, the second harmonic) that needs to be suppressed, which is not limited in this embodiment.

In this embodiment, the rf power amplifying circuit 100 may further include a second resonance module 180, where the second resonance module 180 is connected to the second input 1414. The second resonance module 180 forms a third resonance, and a third resonance frequency of the third resonance is the same as the second resonance frequency. The third resonance frequency of the third resonance and the second resonance frequency of the second resonance are both 2f ₀ That is, when there is a second harmonic in the second differential signal, the second resonance module 180 can suppress the second harmonic before the second differential signal is input to the balun module 140. Specifically, the second resonance module 180 includes a secondAnd one end formed by connecting the inductor 184 and the third capacitor 182 in series is connected with the second input end 1414, and the other end is grounded. The determination of the inductance value of the second inductor 184 and the capacitance value of the third capacitor 182 can refer to the above formula, and will not be described herein.

In this embodiment, the rf power amplifying circuit 100 can suppress other higher harmonics by setting the first resonant module 170 and the second resonant module 180, for example, when there are two harmonics and three harmonics in the first rf signal at the same time, the rf power amplifying circuit 100 can suppress the second harmonic by the first resonant module 170 and the second resonant module 180, and the parallel resonant cavity formed by the first capacitor 160 and the second sub-coil 1434 can suppress the three harmonics, so as to reduce interference of the higher harmonics on the fundamental wave signal, and ensure signal transmission quality of the rf power amplifying circuit 100.

Referring to fig. 6, the embodiment of the present application further provides a rf front-end module 200 configured with the rf power amplifying circuit 100. The rf front-end module 200 is a component that integrates two or more discrete devices such as an rf switch, a low noise amplifier, a filter, a duplexer, a power amplifier, etc. into one independent module, thereby improving the integration level and hardware performance and miniaturizing the volume. Specifically, the radio frequency front end module 200 may be applied to 4G and 5G communication devices such as smart phones, tablet computers, smart watches, and the like.

The embodiment provides a radio frequency power amplifying circuit 100 and a radio frequency front end module 200 configured with the radio frequency power amplifying circuit 100, wherein the radio frequency power amplifying circuit 100 may include a power amplifying module 120, a balun module 140 and a first capacitor 160. The balun module 140 is connected to the power amplifying module 120, and is configured to receive the first radio frequency signal sent by the power amplifying module 120. The balun module 140 may include a first coil 141 and a second coil 143 coupled to each other, wherein the first coil 141 and the power amplifying module 120 are connected. The second coil 143 includes a first sub-coil 1432 and a second sub-coil 1434, one end of the first sub-coil 1432 and one end of the second sub-coil 1434 are connected to form a common terminal 1436, the other end of the first sub-coil 1432 is used for outputting a second radio frequency signal, and the other end of the second sub-coil 1434 is grounded. One end of the first capacitor 160 is connected to the common terminal 1436, and the other end is grounded.

In this specification, certain terms are used throughout the description and claims to refer to particular components. Those of skill in the art will appreciate that a hardware manufacturer may refer to the same component by different names. The description and claims do not take the difference in name as a way of distinguishing between components, but rather take the difference in functionality of the components as a criterion for distinguishing. As used throughout the specification and claims, the word "comprise" and "comprises" are to be construed as "including, but not limited to"; by "substantially" is meant that a person skilled in the art can solve the technical problem within a certain error range, essentially achieving the technical effect.

In the description of the present application, it should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "inner," and the like indicate an orientation or a positional relationship based on that shown in the drawings, and are merely for convenience of description of the present application, but do not indicate or imply that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application.

In this application, the terms "mounted," "connected," "secured," and the like are to be construed broadly, unless otherwise specifically indicated or defined. For example, the connection can be fixed connection, detachable connection or integral connection; can be mechanically or electrically connected; the connection may be direct, indirect via an intermediate medium, or communication between two elements, or only surface contact. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.

In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.

Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" is at least two, such as two, three, etc., unless explicitly defined otherwise.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting thereof; although the present application has been described in detail with reference to the foregoing embodiments, one of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not drive the essence of the corresponding technical solutions to depart from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A radio frequency power amplifying circuit, comprising:

a power amplification module;

the balun module is connected with the power amplification module and is used for receiving the first radio frequency signal sent by the power amplification module; the balun module comprises a first coil and a second coil which are mutually coupled, and the first coil is connected with the power amplification module;

the second coil comprises a first sub-coil and a second sub-coil, one end of the first sub-coil is connected with one end of the second sub-coil to form a common end, and the other end of the first sub-coil is used for outputting a second radio frequency signal; the other end of the second sub-coil is grounded; and

and one end of the first capacitor is connected with the common end, and the other end of the first capacitor is grounded.

2. The radio frequency power amplification circuit of claim 1, wherein the first capacitance and the equivalent inductance of the second sub-coil form a first resonance, and wherein a first ratio between a first resonance frequency of the first resonance and a signal frequency of a fundamental wave signal in the first radio frequency signal is greater than or equal to 2.

3. The radio frequency power amplifying circuit according to claim 2, wherein the first ratio is equal to 3.

4. The radio frequency power amplification circuit of claim 1, wherein a ratio between an equivalent inductance value of the second sub-coil and an equivalent inductance value of the first sub-coil is less than or equal to 0.25.

5. The radio frequency power amplification circuit of claim 1, wherein the equivalent inductance value of the second sub-coil is less than or equal to 100pH.

6. The radio frequency power amplifying circuit according to any of claims 1 to 5, wherein the first coil comprises a first input terminal and a second input terminal;

the power amplification module comprises a first transistor and a second transistor, the first transistor and the second transistor form a differential amplification circuit, the first transistor is connected with the first input end, and the second transistor is connected with the second input end.

7. The radio frequency power amplification circuit of claim 6, wherein the first transistor is a first bipolar transistor and the second transistor is a second bipolar transistor;

the base electrode of the first transistor is used for inputting a first differential signal, the collector electrode of the first transistor is connected with the first input end, and the emitter electrode of the first transistor is grounded;

the base electrode of the second transistor is used for inputting a second differential signal, the collector electrode of the second transistor is connected with the second input end, and the emitter electrode of the second transistor is grounded; the second differential signal is opposite in phase to the first differential signal.

8. The radio frequency power amplification circuit of claim 6, further comprising a first resonant module and a second resonant module, the first resonant module being coupled to the first input terminal and the second resonant module being coupled to the second input terminal;

the first resonance module forms second resonance, and a second ratio and a first ratio between a second resonance frequency of the second resonance and a signal frequency of a fundamental wave signal in the first radio frequency signal are different;

the second resonant module forms a third resonance, a third resonant frequency of the third resonance being the same as the second resonant frequency.

9. The radio frequency power amplifying circuit according to claim 8, wherein the first resonance module comprises a first inductor and a second capacitor, one end formed by connecting the first inductor and the second capacitor in series is connected with the first input end, and the other end is grounded;

the second resonance module comprises a second inductor and a third capacitor, one end formed by connecting the second inductor and the third capacitor in series is connected with the second input end, and the other end is grounded.

10. A radio frequency front end module, comprising: a radio frequency power amplifying circuit according to any of claims 1 to 9.