CN219107401U - Radio frequency power amplifying circuit and radio frequency front end module - Google Patents
Radio frequency power amplifying circuit and radio frequency front end module Download PDFInfo
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Abstract
本申请公开了一种射频功率放大电路以及射频前端模组。射频功率放大电路包括功率放大模块、巴伦模块及第一电容。其中,巴伦模块和功率放大模块相连接,巴伦模块包括相互耦合的第一线圈和第二线圈,第一线圈和功率放大模块相连接。第二线圈包括第一子线圈和第二子线圈,第一子线圈的一端和第二子线圈的一端相连接以形成公共端,第二子线圈的另一端接地。第一电容的一端和公共端相连接,另一端接地。因此,本申请中巴伦模块的输出端设有由第一电容与第二子线圈相并联所形成的第一谐振,该第一谐振可以对第一射频信号中的部分谐波信号(尤其是高次谐振信号)进行抑制,保证了射频功率放大电路的信号传输质量。
The application discloses a radio frequency power amplifier circuit and a radio frequency front-end module. The radio frequency power amplifying circuit includes a power amplifying module, a balun module and a first capacitor. Wherein, the balun module is connected with the power amplifying module, the balun module includes a first coil and a second coil coupled to each other, and the first coil is connected with the power amplifying module. The second coil includes a first sub-coil and a second sub-coil, one end of the first sub-coil is connected to one end of the second sub-coil to form a common terminal, and the other end of the second sub-coil is grounded. One end of the first capacitor is connected to the common end, and the other end is grounded. Therefore, the output end of the balun module in the present application is provided with the first resonance formed by the parallel connection of the first capacitor and the second sub-coil, and the first resonance can affect some harmonic signals in the first radio frequency signal (especially High order resonance signal) is suppressed to ensure the signal transmission quality of the radio frequency power amplifier circuit.
Description
技术领域technical field
本申请涉及射频技术领域,更具体地,涉及一种射频功率放大电路以及射频前端模组。The present application relates to the field of radio frequency technology, and more specifically, to a radio frequency power amplifier circuit and a radio frequency front-end module.
背景技术Background technique
在无线通信系统中,射频前端电路往往包括低噪声放大器、功率放大器和平衡-不平衡变换器(也即,巴伦)等等。其中,巴伦和功率放大器的信号输出端相连接,用于对通过功率放大器进行幅值放大后的信号进行合成,进而输出射频信号。In a wireless communication system, an RF front-end circuit often includes a low-noise amplifier, a power amplifier, and a balanced-unbalanced converter (ie, a balun) and the like. Wherein, the balun is connected with the signal output end of the power amplifier, and is used for synthesizing the signals amplified by the power amplifier, and then outputting the radio frequency signal.
然而,在功率放大器(例如,差分放大器)的实际工作过程中,存在无法较好抑制信号中高次谐波的问题,进而导致巴伦所输出的射频信号中依旧存在一定的高次谐波,影响射频信号的信号传输质量。However, in the actual working process of the power amplifier (for example, a differential amplifier), there is a problem that the high-order harmonics in the signal cannot be well suppressed, which leads to the existence of certain high-order harmonics in the RF signal output by the balun, which affects The signal transmission quality of radio frequency signals.
实用新型内容Utility model content
本申请实施例提供一种射频功率放大电路以及射频前端模组。Embodiments of the present application provide a radio frequency power amplifier circuit and a radio frequency front-end module.
根据本申请的第一方面,本申请实施例提供一种射频功率放大电路,该射频功率放大电路包括功率放大模块、巴伦模块以及第一电容。其中,巴伦模块和功率放大模块相连接,用于接收功率放大模块发送的第一射频信号;巴伦模块包括相互耦合的第一线圈和第二线圈,第一线圈和功率放大模块相连接。第二线圈包括第一子线圈和第二子线圈,第一子线圈的一端和第二子线圈的一端相连接以形成公共端,第一子线圈的另一端用于输出第二射频信号;第二子线圈的另一端接地。第一电容的一端和公共端相连接,另一端接地。According to the first aspect of the present application, an embodiment of the present application provides a radio frequency power amplifying circuit, where the radio frequency power amplifying circuit includes a power amplifying module, a balun module, and a first capacitor. Wherein, the balun module is connected with the power amplifying module, and is used for receiving the first radio frequency signal sent by the power amplifying module; the balun module includes a first coil and a second coil coupled to each other, and the first coil is connected with the power amplifying module. The second coil includes a first sub-coil and a second sub-coil, one end of the first sub-coil is connected to one end of the second sub-coil to form a common terminal, and the other end of the first sub-coil is used to output a second radio frequency signal; The other end of the second sub-coil is grounded. One end of the first capacitor is connected to the common end, and the other end is grounded.
其中,在一些可选实施例中,第一电容和第一子线圈的等效电感形成第一谐振,第一谐振的第一谐振频率和第一射频信号中基波信号的信号频率之间的第一比值大于或等于2。Wherein, in some optional embodiments, the first capacitance and the equivalent inductance of the first sub-coil form a first resonance, and the first resonance frequency of the first resonance is between the signal frequency of the fundamental signal in the first radio frequency signal. The first ratio is greater than or equal to two.
其中,在一些可选实施例中,第一比值等于3。Wherein, in some optional embodiments, the first ratio is equal to 3.
其中,在一些可选实施例中,第二子线圈的等效电感值和第一子线圈的等效电感值之间的比值小于或等于0.25。Wherein, in some optional embodiments, the ratio between the equivalent inductance value of the second sub-coil and the equivalent inductance value of the first sub-coil is less than or equal to 0.25.
其中,在一些可选实施例中,第二子线圈的等效电感值小于或等于100pH。Wherein, in some optional embodiments, the equivalent inductance of the second sub-coil is less than or equal to 100pH.
其中,在一些可选实施例中,第一线圈包括第一输入端和第二输入端;功率放大模块包括第一晶体管和第二晶体管,第一晶体管和第二晶体管构成差分放大电路,第一晶体管和第一输入端相连接,第二晶体管和第二输入端相连接。Wherein, in some optional embodiments, the first coil includes a first input terminal and a second input terminal; the power amplification module includes a first transistor and a second transistor, and the first transistor and the second transistor form a differential amplifier circuit, and the first The transistor is connected to the first input terminal, and the second transistor is connected to the second input terminal.
其中,在一些可选实施例中,第一晶体管为第一双极型三极管,第二晶体管为第二双极型三极管;第一晶体管的基极用于输入第一差分信号,第一晶体管的集电极和第一输入端相连接,第一晶体管的发射极接地;第二晶体管的基极用于输入第二差分信号,第二晶体管的集电极和第二输入端相连接,第二晶体管的发射极接地;第二差分信号和第一差分信号的相位相反。Wherein, in some optional embodiments, the first transistor is a first bipolar triode, and the second transistor is a second bipolar triode; the base of the first transistor is used to input the first differential signal, and the base of the first transistor The collector is connected to the first input terminal, the emitter of the first transistor is grounded; the base of the second transistor is used to input the second differential signal, the collector of the second transistor is connected to the second input terminal, and the second transistor’s The emitter is grounded; the phase of the second differential signal is opposite to that of the first differential signal.
其中,在一些可选实施例中,射频功率放大电路还包括第一谐振模块和第二谐振模块,第一谐振模块和第一输入端相连接,第二谐振模块和第二输入端相连接;第一谐振模块形成第二谐振,第二谐振的第二谐振频率和第一射频信号中基波信号的信号频率之间的第二比值和第一比值不相同;第二谐振模块形成第三谐振,第三谐振的第三谐振频率和第二谐振频率相同。Wherein, in some optional embodiments, the radio frequency power amplification circuit further includes a first resonance module and a second resonance module, the first resonance module is connected to the first input terminal, and the second resonance module is connected to the second input terminal; The first resonance module forms a second resonance, and the second ratio between the second resonance frequency of the second resonance and the signal frequency of the fundamental signal in the first radio frequency signal is different from the first ratio; the second resonance module forms a third resonance , the third resonance frequency of the third resonance is the same as the second resonance frequency.
其中,在一些可选实施例中,第一谐振模块包括第一电感和第二电容,第一电感和第二电容相串联所形成的一端和第一输入端相连接,另一端接地;第二谐振模块包括第二电感和第三电容,第二电感和第三电容相串联所形成的一端和第二输入端相连接,另一端接地。Wherein, in some optional embodiments, the first resonant module includes a first inductor and a second capacitor, one end formed by connecting the first inductor and the second capacitor in series is connected to the first input end, and the other end is grounded; the second The resonant module includes a second inductor and a third capacitor, one end formed by connecting the second inductor and the third capacitor in series is connected to the second input end, and the other end is grounded.
根据本申请的第一方面,本申请实施例提供一种射频前端模组,该射频前端模组包括上述的射频功率放大电路。According to the first aspect of the present application, an embodiment of the present application provides a radio frequency front-end module, the radio frequency front-end module includes the above-mentioned radio frequency power amplifying circuit.
本申请实施方式提供的射频功率放大电路以及配置有射频功率放大电路的射频前端模组,射频功率放大电路包括功率放大模块、巴伦模块以及第一电容。其中,巴伦模块的第一线圈和功率放大模块相连接,用于接收功率放大模块发送的第一射频信号。巴伦模块的第二线圈包括第一子线圈和第二子线圈,第二子线圈的一端和第一子线圈的一端相连接以形成公共端,第二子线圈的另一端接地。第一电容的一端和公共端相连接,另一端接地。Embodiments of the present application provide a radio frequency power amplifier circuit and a radio frequency front-end module configured with a radio frequency power amplifier circuit. The radio frequency power amplifier circuit includes a power amplifier module, a balun module and a first capacitor. Wherein, the first coil of the balun module is connected to the power amplifying module for receiving the first radio frequency signal sent by the power amplifying module. The second coil of the balun module includes a first sub-coil and a second sub-coil, one end of the second sub-coil is connected to one end of the first sub-coil to form a common terminal, and the other end of the second sub-coil is grounded. One end of the first capacitor is connected to the common end, and the other end is grounded.
因此,本申请中巴伦模块的输出端设有由第一电容与第二子线圈相并联所形成的第一谐振,该第一谐振可以对第一射频信号中的部分谐波信号(尤其是高次谐振信号)进行抑制,保证了射频功率放大电路的信号传输质量。例如,通过配置使得第一谐振的谐振频率为三次谐波的谐波频率3f0(其中,f0为第一射频信号中基波信号的信号频率)时,则可以对该三次谐波进行抑制。此外,由于该第一谐振借用了第二线圈的部分线圈(也即,第二子线圈),因此,只需要接入第一电容即可实现第一谐振,节省了射频功率放大电路的硬件成本。Therefore, the output end of the balun module in the present application is provided with the first resonance formed by the parallel connection of the first capacitor and the second sub-coil, and the first resonance can affect some harmonic signals in the first radio frequency signal (especially High order resonance signal) is suppressed to ensure the signal transmission quality of the radio frequency power amplifier circuit. For example, by configuring the resonant frequency of the first resonance to be the harmonic frequency 3f 0 of the third harmonic (wherein f 0 is the signal frequency of the fundamental signal in the first radio frequency signal), the third harmonic can be suppressed . In addition, since the first resonance borrows part of the second coil (that is, the second sub-coil), only the first capacitor needs to be connected to realize the first resonance, which saves the hardware cost of the radio frequency power amplifier circuit .
附图说明Description of drawings
为了更清楚地说明本申请实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本申请的一些实施例,对于本领域技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, other drawings can also be obtained based on these drawings without any creative effort.
图1是本申请实施例提供的射频功率放大电路的结构示意图。FIG. 1 is a schematic structural diagram of a radio frequency power amplifier circuit provided by an embodiment of the present application.
图2是图1所示射频功率放大电路的另一种结构示意图。FIG. 2 is another structural schematic diagram of the radio frequency power amplifying circuit shown in FIG. 1 .
图3是图1所示射频功率放大电路的又一种结构示意图。FIG. 3 is another structural schematic diagram of the radio frequency power amplifying circuit shown in FIG. 1 .
图4是图1所示射频功率放大电路的再一种结构示意图。FIG. 4 is another structural schematic diagram of the radio frequency power amplifying circuit shown in FIG. 1 .
图5是图1所示射频功率放大电路的还一种结构示意图。FIG. 5 is another structural schematic diagram of the radio frequency power amplifying circuit shown in FIG. 1 .
图6是本申请实施例提供的射频前端模组的结构示意图。FIG. 6 is a schematic structural diagram of a radio frequency front-end module provided by an embodiment of the present application.
具体实施方式Detailed ways
为了使本技术领域的人员更好地理解本申请方案,下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Apparently, the described embodiments are only some of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts belong to the scope of protection of this application.
请参阅图1,在本实施例中,射频功率放大电路100可以包括功率放大模块120、巴伦模块140和第一电容160。巴伦模块140和功率放大模块120相连接,用于接收功率放大模块120发送的第一射频信号。巴伦模块140可以包括相互耦合的第一线圈141和第二线圈143,其中,第一线圈141和功率放大模块120相连接。第二线圈143包括第一子线圈1432和第二子线圈1434,第一子线圈1432的一端和第二子线圈1434的一端相连接以形成公共端1436,第一子线圈1432的另一端用于输出第二射频信号,第二子线圈1434的另一端接地。第一电容160的一端和公共端1436相连接,另一端接地。Referring to FIG. 1 , in this embodiment, a radio frequency power amplifying
因此,本申请中巴伦模块140的输出端设有由第一电容160与第二子线圈1434相并联所形成的第一谐振,该第一谐振可以对第一射频信号中的部分谐波信号(尤其是高次谐振信号)进行抑制,保证了射频功率放大电路的信号传输质量。例如,通过配置使得第一谐振的谐振频率为三次谐波的谐波频率3f0(其中,f0为第一射频信号中基波信号的信号频率)时,则可以对该三次谐波进行抑制。此外,由于该第一谐振借用了第二线圈143的部分线圈(也即,第二子线圈1434),因此,只需要接入第一电容160即可实现第一谐振,节省了射频功率放大电路100的硬件成本。Therefore, the output terminal of the
下面对射频功率放大电路100中的各个模块进行详细介绍。Each module in the radio frequency power amplifying
巴伦模块140可以包括平衡-不平衡转换器(Balance-unbalance,BALUN),平衡-不平衡转换器用于对信号进行转换合成,输出射频信号。在本实施例中,巴伦模块140和功率放大模块120的信号输出端相连接,用于接收功率放大模块120发送的第一射频信号。具体地,第一射频信号由射频功率放大电路100具体应用的通信设备决定。示例性地,若通信设备工作在N77频段,则第一射频信号的信号频率可以为3.3GHz~4.2GHz;若通信设备工作在N78频段,则第一射频信号的信号频率可以为3.3GHz~3.8GHz;若通信设备工作在N79频段,则第一射频信号的信号频率可以为4.5GHz~5GHz。本实施例对第一射频信号的信号频率不作具体限定。The
这里需要说明的是,上述“第一射频信号的信号频率”应当理解为“第一射频信号中基波信号的信号频率”,但由于功率放大模块120无法对第一射频信号中的高次谐波(例如,三次谐波、五次谐波等等)进行较好的抑制,因此导致第一射频信号中会掺杂有高次谐波信号,若是不对上述高次谐波信号进行抑制,会降低射频功率放大电路100的信号传输质量。It should be noted here that the above "signal frequency of the first radio frequency signal" should be understood as "the signal frequency of the fundamental signal in the first radio frequency signal", but since the
在本实施例中,巴伦模块140可以包括相互耦合的第一线圈141和第二线圈143。在一些可能的实施例中,第一线圈141和第二线圈143可以缠绕在同一个导磁体(例如,铁氧体磁芯)上实现“电磁耦合”。在另一些可能的实施例中,第一线圈141和第二线圈143也可以采用直接耦合、电感耦合、电容耦合等方式实现彼此互相耦合,本申请实施例对第一线圈141和第二线圈143之间的耦合方式不作具体限定。In this embodiment, the
在本实施例中,第一线圈141和功率放大模块120相连接,用于接收功率放大模块120发送的第一射频信号。第二线圈143的一端用于输出第二射频信号,另一端接地。具体地,第二线圈143包括第一子线圈1432和第二子线圈1434,其中,第一子线圈1432的一端和第二子线圈1434的一端相连接以形成公共端1436,第一子线圈1432的另一端用于输出第二射频信号,第二子线圈1434的另一端接地。In this embodiment, the
第一电容160可以是贴片电容、插装电容等等。其中,第一电容160的一端和公共端1436相连接,另一端接地。也即,第一电容160和第二子线圈1434相并联,因此,在射频功率放大电路100工作时,第一电容160和第二子线圈1434的等效电感可以形成第一谐振(也即,LC并联谐振)。当第一谐振的第一谐振频率和第一射频信号中高次谐波的信号频率大致相同时,则可以对该高次谐波进行抑制。具体地,第一谐振的第一谐振频率和第一射频信号中基波信号的信号频率之间的第一比值可以大于或等于2。例如,第一比值可以是2、3、4、5等等。The
在一些可能的实施例中,第一谐振的第一谐振频率和第一射频信号中基波信号的信号频率之间的第一比值可以等于3。此时,第一谐振的第一谐振频率为3f0,其中,f0为第一射频信号中基波信号的信号频率。在这种情况下,当第一射频信号中三次谐波信号(也即,频率为3f0的谐波信号)通过该由第一电容160和第二子线圈1434相并联所形成的并联谐振腔(LCtank)时,该并联谐振腔可以视为一个带阻滤波器,因此当三次谐波信号通过该带阻滤波器时,可以实现对三次谐波信号的抑制。此外,当第一射频信号中的基波信号通过该并联谐振腔时,该并联谐振腔可以等效为一个低电阻或者是只表现出第二子线圈1434的等效电感的特性,因此,该并联谐振腔不会影响基波信号的阻抗和插损,保证了基波信号的正常输出。In some possible embodiments, the first ratio between the first resonance frequency of the first resonance and the signal frequency of the fundamental signal in the first radio frequency signal may be equal to three. At this time, the first resonance frequency of the first resonance is 3f 0 , where f 0 is the signal frequency of the fundamental signal in the first radio frequency signal. In this case, when the third harmonic signal (that is, the harmonic signal with a frequency of 3f0 ) in the first radio frequency signal passes through the parallel resonant cavity formed by the parallel connection of the
在本实施例中,第二子线圈1434的等效电感值和第一子线圈1432的等效电感值之间的比值可以小于或等于0.25。由于第一子线圈1432和第二子线圈1434可以视为第二线圈143的两个部分,以第二线圈143的等效电感值为500pH为例,则第一子线圈1432的等效电感值大于或等于400pH,第二子线圈1434的等效电感值小于或等于100pH。若是该第二线圈143较为均匀地缠绕在导磁体上,则第二子线圈1434的长度不超过第二线圈143总长度的五分之一,也即,第二子线圈1434只占用了第二线圈143的较短的一段。因此,该第二子线圈1434的等效电感值较小,在本实施例中,第二子线圈1434的等效电感值小于或等于100pH。In this embodiment, the ratio between the equivalent inductance of the second sub-coil 1434 and the equivalent inductance of the first sub-coil 1432 may be less than or equal to 0.25. Since the first sub-coil 1432 and the second sub-coil 1434 can be regarded as two parts of the
具体地,在第二子线圈1434的等效电感值确定的情况下,基于以下公式可以计算出第一电容160的电容值。Specifically, when the equivalent inductance value of the second sub-coil 1434 is determined, the capacitance value of the
其中,f为谐振频率,在第一比值等于3的情况下,f=3f0。L为第二子线圈1434的等效电感值。C为第一电容160的电容值。因此,研发人员可以根据实际需要抑制的高次谐波(例如,三次谐波)的谐波频率确定出相应的第一电容160的电容值,本实施例对第一电容160的电容值不作具体限定。Wherein, f is the resonant frequency, and when the first ratio is equal to 3, f=3f 0 . L is the equivalent inductance of the second sub-coil 1434 . C is the capacitance of the
请参阅图2和图3,在本实施例中,第一线圈141可以包括第一输入端1412和第二输入端1414。第一线圈141通过第一输入端1412和第二输入端1414和功率放大模块120相连接。具体地,功率放大模块120可以包括第一晶体管121和第二晶体管123。其中,第一晶体管121和第二晶体管123构成差分放大电路,第一晶体管121和第一输入端1412相连接,第二晶体管123和第二输入端1414相连接。由于本实施例中的功率放大模块120是由第一晶体管121和第二晶体管123所构成差分放大电路,也即,该功率放大模块120的输入信号为差分信号对。其中,该差分信号对可以包括幅值相同、相位相反的第一差分信号和第二差分信号。该功率放大模块120能够对第一差分信号和第二差分信号的幅值放大,并将幅值放大后的第一差分信号和第二差分信号作为第一射频信号输入巴伦模块140。此外,该功率放大模块120可以起到克服零点漂移、稳定静态工作点的作用,保证了射频功率放大电路100工作的稳定性。Referring to FIG. 2 and FIG. 3 , in this embodiment, the
具体地,第一晶体管121和第二晶体管123的类型、型号均相同。示例性地,第一晶体管121和第二晶体管123可以是双极型三极管(Bipolar Junction Transistor,BJT)、场效应晶体管(Field Effect Transistor,FET)、绝缘栅双极型晶体管(Insulated GateBipolar Transistor,IGBT)等等。这里以第一晶体管121和第二晶体管123均为双极型三极管为例进行说明。在图3所示的实施例中,第一晶体管121为第一双极型三极管,第二晶体管123为第二双极型三极管,且第一晶体管121和第二晶体管123的型号相同,均为NPN型的双极型三极管。具体地,第一晶体管121的基极用于输入第一差分信号,第一晶体管121的集电极和第一输入端1412相连接,用于将幅值放大后的第一差分信号发送至第一输入端1412,第一晶体管121的发射极接地。第二晶体管123的基极用于输入第二差分信号,第二晶体管123的集电极和第二输入端1414相连接,用于将幅值放大后的第二差分信号发送至第二输入端1414,第二晶体管123的发射极接地。Specifically, the type and model of the
在图3所示的实施例中,第一晶体管121的集电极和第二晶体管123的集电极还分别与电源VCC相连接。其中,电源VCC为电路电压(Voltage To Current Converter,VCC),也即第一晶体管121和第二晶体管123的供电电压。在本实施例中,电源VCC用于分别为第一晶体管121和第二晶体管123提供工作电压。具体地,电源VCC的电压值可以小于或等于12V,例如,电压值为12V、5V、1.5V等等。In the embodiment shown in FIG. 3 , the collector of the
请参阅图3和图4,功率放大模块120还可以包括第一集电极电感L1和第二集电极电感L2。其中,第一集电极电感L1的一端和第一晶体管121的集电极相连接,另一端连接于电源VCC。第二集电极电感L2的一端和第二晶体管123的集电极相连接,另一端连接于电源VCC。具体地,第一集电极电感L1和第二集电极电感L2的电感值相同,用于提高由第一晶体管121和第二晶体管123所构成差分放大电路的电路稳定性。Referring to FIG. 3 and FIG. 4 , the
请参阅图4,功率放大模块120还可以包括第一电阻R1和第二电阻R2。其中,第一电阻R1的一端和第一晶体管121的发射极相连接,另一端接地。第二电阻R2的一端和第二晶体管123的发射极相连接,另一端接地。具体地,第一电阻R1和第二电阻R2的阻值相同,且均为发射极电阻,第一电阻R1用于限制第一晶体管121的发射极电流,第二电阻R2用于限制第二晶体管123的发射极电流,以提高由第一晶体管121和第二晶体管123所构成差分放大电路的电路稳定性。Please refer to FIG. 4 , the
在一些可能的实施例中,第一晶体管121和第二晶体管123还可以是金属氧化物半导体场效电晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)。其中,第一晶体管121可以是第一金属氧化物半导体场效电晶体管,下文简称为“第一场效应管”;第二晶体管123可以是第二金属氧化物半导体场效电晶体管,下文简称为“第二场效应管”。第一场效应管和第二场效应管的型号相同,可以均为N沟道型金属氧化物半导体场效电晶体管。具体地,第一场效应管的栅极用于输入第一差分信号,第一场效应管的源极和第一输入端1412相连接,用于将幅值放大后的第一差分信号发送至第一输入端1412,第一场效应管的漏极接地。第二场效应管的栅极用于输入第二差分信号,第二场效应管的源极和第二输入端1414相连接,用于将幅值放大后的第二差分信号发送至第二输入端1414,第二场效应管的漏极接地。In some possible embodiments, the
请参阅图5,在本实施例中,射频功率放大电路100还可以包括第一谐振模块170,第一谐振模块170和第一输入端1412相连接。第一谐振模块170可以形成第二谐振,第二谐振的第二谐振频率和第一射频信号中基波信号的信号频率之间的第二比值和第一比值不相同。示例性地,第二比值可以为2,第一比值可以为3。在这种情况下,第二谐振的第二谐振频率为2f0,也即,当第一差分信号中存在二次谐波时,该第一谐振模块170能够在第一差分信号输入巴伦模块140之前,对该二次谐波进行抑制。具体地,第一谐振模块170可以包括第一电感174和第二电容172,第一电感174和第二电容172相串联所形成的一端和第一输入端1412相连接,另一端接地。因此,本实施例中的第二谐振为第一电感174和第二电容172所构成的串联谐振,具体地,第一电感174的电感值和第二电容172的电容值满足以下公式。Referring to FIG. 5 , in this embodiment, the radio frequency
其中,f为谐振频率,在第二比值等于2的情况下,f=2f0。L为第一电感174的电感值。C为第二电容172的电容值。因此,研发人员可以根据实际需要抑制的高次谐波(例如,二次谐波)的谐波频率确定出相应的第一电感174的电感值和第二电容172的电容值,本实施例对此不作具体限定。Wherein, f is the resonant frequency, and when the second ratio is equal to 2, f=2f 0 . L is an inductance value of the
在本实施例中,射频功率放大电路100还可以包括第二谐振模块180,第二谐振模块180和第二输入端1414相连接。第二谐振模块180形成第三谐振,第三谐振的第三谐振频率和第二谐振频率相同。示例性地,第三谐振的第三谐振频率和第二谐振的第二谐振频率均为2f0,也即,当第二差分信号中存在二次谐波时,该第二谐振模块180能够在第二差分信号输入巴伦模块140之前,对该二次谐波进行抑制。具体地,第二谐振模块180包括第二电感184和第三电容182,第二电感184和第三电容182相串联所形成的一端和第二输入端1414相连接,另一端接地。第二电感184的电感值和第三电容182的电容值的确定方式可以参照上述公式,在此不再赘述。In this embodiment, the radio frequency
在本实施例中,射频功率放大电路100通过设置第一谐振模块170和第二谐振模块180,能够实现对其他高次谐波进行抑制,例如,在第一射频信号中同时存在二次谐波和三次谐波时,射频功率放大电路100通过第一谐振模块170和第二谐振模块180可以对二次谐波进行抑制,通过第一电容160和第二子线圈1434所形成的并联谐振腔可以对三次谐波进行抑制,进而降低了高次谐波对基波信号的干扰,保证了射频功率放大电路100的信号传输质量。In this embodiment, the radio frequency
请参阅图6,本申请实施方式还提供一种配置有射频功率放大电路100的射频前端模组200。射频前端模组200是一种将射频开关、低噪声放大器、滤波器、双工器、功率放大器等两种或者两种以上的分立器件集成为一个独立模组的元件,从而提高集成度和硬件性能,并使体积小型化。具体地,射频前端模组200可以应用于智能手机、平板电脑、智能手表等4G、5G通信设备。Referring to FIG. 6 , the embodiment of the present application also provides a radio frequency front-
本实施例提供了一种射频功率放大电路100以及配置有该射频功率放大电路100的射频前端模组200,其中,射频功率放大电路100可以包括功率放大模块120、巴伦模块140和第一电容160。巴伦模块140和功率放大模块120相连接,用于接收功率放大模块120发送的第一射频信号。巴伦模块140可以包括相互耦合的第一线圈141和第二线圈143,其中,第一线圈141和功率放大模块120相连接。第二线圈143包括第一子线圈1432和第二子线圈1434,第一子线圈1432的一端和第二子线圈1434的一端相连接以形成公共端1436,第一子线圈1432的另一端用于输出第二射频信号,第二子线圈1434的另一端接地。第一电容160的一端和公共端1436相连接,另一端接地。This embodiment provides a radio frequency
因此,本申请中巴伦模块140的输出端设有由第一电容160与第二子线圈1434相并联所形成的第一谐振,该第一谐振可以对第一射频信号中的部分谐波信号(尤其是高次谐振信号)进行抑制,保证了射频功率放大电路的信号传输质量。例如,通过配置使得第一谐振的谐振频率为三次谐波的谐波频率3f0(其中,f0为第一射频信号中基波信号的信号频率)时,则可以对该三次谐波进行抑制。此外,由于该第一谐振借用了第二线圈143的部分线圈(也即,第二子线圈1434),因此,只需要接入第一电容160即可实现第一谐振,节省了射频功率放大电路100的硬件成本。Therefore, the output terminal of the
在本申请说明书中,如在说明书及权利要求当中使用了某些词汇来指称特定组件。本领域技术人员应可理解,硬件制造商可能会用不同名词来称呼同一组件。说明书及权利要求并不以名称的差异作为区分组件的方式,而是以组件在功能上的差异作为区分的准则。如在通篇说明书及权利要求当中所提及的“包括”为一开放式用语,故应解释成“包含但不限定于”;“大致”是指本领域技术人员能够在一定误差范围内解决技术问题,基本达到技术效果。In the specification of this application, certain terms are used as in the specification and claims to refer to specific components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The description and claims do not use the difference in name as a way to distinguish components, but use the difference in function of components as a criterion for distinguishing. As mentioned throughout the specification and claims, "comprising" is an open term, so it should be interpreted as "including but not limited to"; "approximately" means that those skilled in the art can solve the problem within a certain error range Technical problems, basically achieve technical results.
在本申请的描述中,需要理解的是,术语“上”、“下”、“前”、“后”、“左”、“右”、“里”等指示方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请而简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位,以特定的方位构造和操作,因此不能理解为对本申请的限制。In the description of the present application, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "in", etc. indicate orientation or positional relationship based on the drawings The orientation or positional relationship shown is only to simplify the description for the convenience of describing the present application, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a reference to the present application. limits.
在本申请中,除非另有明确的规定或限定,术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解。例如,可以是固定连接,也可以是可拆卸连接,或一体连接;可以是机械连接,也可以是电连接;可以是直接连接,也可以通过中间媒介间接相连,也可以是两个元件内部的连通,也可以是仅为表面接触。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本申请中的具体含义。In this application, terms such as "installation", "connection", "connection" and "fixation" should be interpreted in a broad sense unless otherwise clearly specified or limited. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediary, or it can be an internal connection between two components. Communication, or only surface contact. Those of ordinary skill in the art can understand the specific meanings of the above terms in this application according to specific situations.
在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In the description of this specification, descriptions referring to the terms "one embodiment", "some embodiments", "example", "specific examples", or "some examples" mean that specific features described in connection with the embodiment or example , structure, material or characteristic is included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the described specific features, structures, materials or characteristics may be combined in any suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples and features of different embodiments or examples described in this specification without conflicting with each other.
此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。在本申请的描述中,“多个”的含义是至少两个,例如两个,三个等,除非另有明确具体的限定。In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, the features defined as "first" and "second" may explicitly or implicitly include at least one of these features. In the description of the present application, "plurality" means at least two, such as two, three, etc., unless otherwise specifically defined.
最后应说明的是:以上实施例仅用以说明本申请的技术方案,而非对其限制;尽管参照前述实施例对本申请进行了详细的说明,本领域的普通技术人员当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不驱使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present application, but not to limit them; although the present application has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: it can still Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some of the technical features; and these modifications or replacements do not drive the essence of the corresponding technical solutions away from the spirit and scope of the technical solutions of the various embodiments of the present application.
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Address after: No. 6 Mingli Road, Longxing Town, Liangjiang New District, Yubei District, Chongqing 401120, China Patentee after: Ruishi Chuangxin (Chongqing) Technology Co.,Ltd. Country or region after: China Address before: 2001, Building 3, Shenzhen New Generation Industrial Park, No. 136 Zhongkang Road, Meidu Community, Meilin Street, Futian District, Shenzhen, Guangdong Province Patentee before: Ruishi Chuangxin (Shenzhen) Technology Co.,Ltd. Country or region before: China |