CN219096312U - Heating substrate for thermal print head - Google Patents
Heating substrate for thermal print head Download PDFInfo
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- CN219096312U CN219096312U CN202320229670.5U CN202320229670U CN219096312U CN 219096312 U CN219096312 U CN 219096312U CN 202320229670 U CN202320229670 U CN 202320229670U CN 219096312 U CN219096312 U CN 219096312U
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- protective layer
- silicon carbide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B30/00—Energy efficient heating, ventilation or air conditioning [HVAC]
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Abstract
The utility model relates to the technical field of manufacturing of thermal printing heads, in particular to a heating substrate for a thermal printing head, which can effectively improve the adhesion problem of surface paper scraps.
Description
Technical field:
the utility model relates to the technical field of manufacturing of thermal printheads, in particular to a heating substrate for a thermal printhead, which can effectively improve the adhesion problem of surface paper scraps.
The background technology is as follows:
as is well known, a conventional thermal head heating substrate includes: the insulating substrate is provided with a ground coat layer on the surface of the insulating substrate, a wire electrode and a heating resistor body are arranged above the ground coat, an insulating protection layer is covered on the wire electrode and the heating resistor body, a silicon carbide layer is arranged above the insulating protection layer at the heating part of the heating substrate in order to improve the wear resistance of the heating substrate, the surface impedance of the silicon carbide layer is in the KΩ level, and dust and paper scraps can be adsorbed easily on the surface of the silicon carbide layer.
The utility model comprises the following steps:
the utility model provides a heating substrate for a thermal printing head, which can effectively improve the adhesion problem of surface paper scraps.
The utility model is achieved by the following measures:
the utility model provides a heating substrate for thermal print head, is equipped with insulating substrate, and insulating substrate surface is equipped with the ground coat layer, is equipped with wire electrode and heating resistor body on the ground coat layer, covers insulating protective layer on wire electrode and the heating resistor body, its characterized in that, insulating protective layer top still is equipped with high impedance thin film protection layer corresponding the setting region of heating resistor body, high impedance thin film protection layer is carborundum/silicon dioxide composite layer.
The surface impedance of the high-impedance film protective layer is 10 6 Omega or more, more preferably 10 11 Omega or more.
The thickness of the high-impedance thin film protective layer is not more than 5.0 mu m.
The high-impedance thin film protection layer is formed by compounding a silicon dioxide layer and a silicon carbide layer, wherein the silicon dioxide layer is arranged on the upper surface of the silicon carbide layer, the thickness range of the silicon carbide layer is 1.0-4.9 mu m, and the thickness range of the silicon dioxide layer is 0.1-1.0 mu m, and is used for forming a surface impedance exceeding 10 6 And a high-resistance thin film protective layer of omega.
The utility model disclosesThe high-resistance thin film protective layer comprises a silicon carbide thin film protective layer containing silicon dioxide formed by sputtering and having a thickness of not more than 5.0 μm for forming a surface resistance of 10 6 Ω-10 11 And a high-impedance thin film protective layer in the omega range.
The high-impedance thin film protection layer is provided with a silicon carbide layer and a silicon carbide thin film protection layer containing silicon dioxide, the silicon carbide thin film protection layer containing silicon dioxide is arranged on the surface of the silicon carbide layer, the thickness range of the silicon carbide layer is 1.0-4.9 mu m, the thickness range of the mixed thin film protection layer is 0.1-1.0 mu m, and the silicon carbide thin film protection layer is used for forming a thin film with surface impedance exceeding 10 6 And a high-resistance thin film protective layer of omega.
According to the utility model, the high-resistance film protective layer is arranged above the heating resistor body, so that the wear resistance of the product is improved, and the adhesion of paper scraps and dust is improved, thereby improving the service performance of the product.
Description of the drawings:
fig. 1 is a top view of embodiment 1 of the present utility model.
FIG. 2 is a cross-sectional view of example 1 of the present utility model.
Fig. 3 is a top view of embodiment 2 of the present utility model.
FIG. 4 is a cross-sectional view of example 2 of the present utility model.
Fig. 5 is a top view of embodiment 3 of the present utility model.
FIG. 6 is a cross-sectional view of example 3 of the present utility model.
Reference numerals: an insulating substrate 1, a primer layer 2, a lead electrode 3, a heating resistor 4, an insulating protective layer 5, a silicon carbide layer 6, a silicon dioxide layer 7, and a silicon carbide film protective layer 8 containing silicon dioxide.
The specific embodiment is as follows:
the utility model will be further described with reference to the drawings and examples.
Example 1:
the embodiment provides a wear-resistant and anti-adhesion heating substrate for a thermal printing head, which comprises an insulating substrate 1, wherein a ground coat layer 2 which fully or partially covers the surface of the insulating substrate 1 is arranged on the insulating substrate 1; printing Jin Jiangliao on the glaze layer 2, sintering to form an electrode wire layer, and then forming a wire electrode 3 through gluing, light leakage, etching and other processes; forming a heating resistor 4 by drawing and printing a resistor paste on a predetermined position of the lead electrode 3 and sintering; then forming an insulating protective layer 5 over the wire electrode 3 and the heating resistor 4 by printing and sintering; thereafter, as shown in fig. 1 and fig. 2, on the insulating protection layer 5, a silicon carbide target material is adopted to generate a silicon carbide layer 6 with 1-5 um in a magnetron sputtering mode corresponding to a heating resistor region, namely a region A-B in the figure; then, a silicon dioxide target material is adopted on the silicon carbide layer 6 in the same position A-B region to generate a silicon dioxide layer 7 with 0.1-1 um in a magnetron sputtering mode; the surface resistance of the heating substrate for the thermal head obtained at this time is infinity;
when the heating substrate for the thermal print head is applied to printing in the embodiment, the silicon dioxide phase in the high-resistance film protective layer acts as a lubricant in the sliding extrusion and friction process, so that the wear resistance of the film protective layer is improved, meanwhile, the silicon dioxide improves the surface resistance of silicon carbide, the surface energy of the silicon carbide is reduced, and the adhesion of paper scraps and dust is improved.
Example 2:
the heating substrate for the thermal print head is provided with an insulating substrate 1, a primer layer 2 is arranged on the insulating substrate 1, a wire electrode layer is arranged on the primer layer 2, and the wire electrode layer finally forms a wire electrode 3; forming a heating resistor 4 by drawing and printing a resistor paste on a predetermined position of the lead electrode 3 and sintering; then forming an insulating protective layer 5 over the wire electrode 3 and the heating resistor 4 by printing and sintering;
thereafter, as shown in fig. 3-4, a silicon carbide film protective layer 8 containing silicon dioxide with a thickness of 1-5 um is formed on the heating part A-B of the insulating protective layer 5 by magnetron sputtering, the silicon carbide film protective layer 8 containing silicon dioxide contains silicon carbide and silicon dioxide at the same time, and the surface impedance is 10 6 ～10 11 Ω。
When the heating substrate for the thermal print head is applied to printing in the embodiment, the silicon dioxide phase in the high-resistance film protective layer acts as a lubricant in the sliding extrusion and friction process, so that the wear resistance of the film protective layer is improved, meanwhile, the silicon dioxide improves the surface resistance of silicon carbide, the surface energy of the silicon carbide is reduced, and the adhesion of paper scraps and dust is improved.
Example 3:
the embodiment provides a heating substrate for a thermal print head, which is printed on an insulating substrate 1 and sintered to form a full or partial ground coat layer 2; the process of printing the sintered glaze layer is called glazing substrate forming process; printing Jin Jiangliao on the glaze layer 2, sintering to form an electrode wire layer, and then forming a wire electrode 3 through processes such as gluing, light leakage, etching and the like; forming a heating resistor 4 by drawing and printing a resistor paste on a predetermined position of the lead electrode 3 and sintering; then forming an insulating protective layer 5 over the wire electrode 3 and the heating resistor 4 by printing and sintering;
thereafter, as shown in fig. 5 and fig. 6, on the upper surface of the insulating protection layer 5, a silicon carbide layer 6 of 1-5 um is generated on the corresponding heating part A-B region by a magnetron sputtering mode; then a silicon carbide film protective layer 8 containing silicon dioxide with the thickness of 0.1-1 um is formed on the silicon carbide layer 6 in the A-B area at the same position, and the surface impedance is 10 6 ～10 11 And a high-resistance thin film protective layer of omega.
According to the utility model, the high-resistance film protective layer is arranged above the heating resistor body, so that the wear resistance of the product is improved, and the adhesion of paper scraps and dust is improved, thereby improving the service performance of the product.
Claims (7)
1. The utility model provides a heating substrate for thermal print head, is equipped with insulating substrate, and insulating substrate surface is equipped with the ground coat layer, is equipped with wire electrode and heating resistor body on the ground coat layer, covers insulating protective layer on wire electrode and the heating resistor body, its characterized in that, insulating protective layer top still is equipped with high impedance thin film protection layer corresponding the setting region of heating resistor body, high impedance thin film protection layer is carborundum/silicon dioxide composite layer.
2. A kind of according to claim 1The heating substrate for the thermal print head is characterized in that the surface resistance of the high-resistance film protection layer is 10 6 Omega or more.
3. The heat generating substrate for a thermal head according to claim 1, wherein the surface resistance of the high-resistance film protective layer is 10 11 Omega or more.
4. A heat generating substrate for a thermal head according to claim 1, wherein the thickness of the high-resistance film protective layer is not more than 5.0 μm.
5. The heating substrate for thermal print head as claimed in claim 1, wherein the high-resistance thin film protective layer is formed by compounding a silicon oxide layer and a silicon carbide layer, the silicon oxide layer is disposed on the upper surface of the silicon carbide layer, the silicon carbide layer has a thickness in the range of 1.0-4.9 μm, and the silicon oxide layer has a thickness in the range of 0.1-1.0 μm for forming a surface resistance exceeding 10 6 And a high-resistance thin film protective layer of omega.
6. The heat-generating substrate for thermal head according to claim 1, wherein the high-resistance film protective layer comprises a silicon carbide film protective layer containing silicon dioxide formed by sputtering, having a thickness of not more than 5.0 μm, for forming a surface resistance of 10 6 Ω-10 11 And a high-impedance thin film protective layer in the omega range.
7. The heating substrate for thermal print head according to claim 1, wherein a silicon carbide layer and a silicon carbide film protective layer containing silicon dioxide are provided in the high-resistance film protective layer, the silicon carbide film protective layer containing silicon dioxide is provided on the surface of the silicon carbide layer, the thickness of the silicon carbide layer is in the range of 1.0-4.9 μm, the thickness of the mixed film protective layer is in the range of 0.1-1.0 μm, and the high-resistance film protective layer is used for forming a surface resistance exceeding 10 6 And a high-resistance thin film protective layer of omega.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320229670.5U CN219096312U (en) | 2023-02-16 | 2023-02-16 | Heating substrate for thermal print head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202320229670.5U CN219096312U (en) | 2023-02-16 | 2023-02-16 | Heating substrate for thermal print head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN219096312U true CN219096312U (en) | 2023-05-30 |
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ID=86430373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202320229670.5U Active CN219096312U (en) | 2023-02-16 | 2023-02-16 | Heating substrate for thermal print head |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN219096312U (en) |
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2023
- 2023-02-16 CN CN202320229670.5U patent/CN219096312U/en active Active
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