CN219032465U

CN219032465U - Crystal growth apparatus

Info

Publication number: CN219032465U
Application number: CN202223449148.2U
Authority: CN
Inventors: 周洁; 王新; 赵玉兵; 张华利; 范伟
Original assignee: JIANGSU GCL SILICON MATERIAL TECHNOLOGY DEVELOPMENT CO LTD
Current assignee: JIANGSU GCL SILICON MATERIAL TECHNOLOGY DEVELOPMENT CO LTD
Priority date: 2022-12-22
Filing date: 2022-12-22
Publication date: 2023-05-16
Anticipated expiration: 2032-12-22

Abstract

The utility model discloses crystal growth equipment which comprises a furnace body, a crucible, a heater and a baffle piece. The crucible is arranged in the furnace body, and raw materials for producing crystals are placed in the crucible. The heater is located between furnace body and the crucible, and the heater is used for heating the crucible, and the heater includes main heater, two heater landing legs and two heater feet, and main heater encircles the periphery side at the crucible and is located the upper portion of crucible, and two heater landing legs set up along the radial relatively of crucible, and the upper end and the main heater of every heater landing leg link to each other and the lower extreme is equipped with the heater foot, and the heater foot is located the below of crucible. A baffle is located on the peripheral side of the crucible and below the main heater, at least a portion of the baffle being located between the peripheral wall of the crucible and the heater leg, the baffle being spaced apart from at least one of the crucible and the heater leg. According to the crystal growth equipment provided by the embodiment of the utility model, the oxygen content in the crystal can be reduced, and the growth quality of the crystal is ensured.

Description

Crystal growth apparatus

Technical Field

The utility model relates to the technical field of crystal growth, in particular to crystal growth equipment.

Background

In the related art, in the process of growing monocrystalline silicon by a crystal growing device, a heater can heat a crucible, the crucible is in a high-temperature environment, part of oxygen in the crucible is melted into a silicon melt of the crucible, and the growth quality of the monocrystalline silicon can be influenced due to the fact that the oxygen content in the silicon melt is too high. The heater landing leg of heater can carry out the heat radiation to crucible lower side wall, leads to crucible temperature to rise, and the below of crucible has oxygen atom to separate out, leads to the oxygen content in the silicon melt too high, and then can influence monocrystalline silicon's production quality.

Disclosure of Invention

The present utility model aims to solve at least one of the technical problems existing in the prior art. Therefore, an object of the present utility model is to provide a crystal growth apparatus, in which a barrier member is provided between an outer peripheral wall of a crucible and a heater leg, the barrier member can be used to block heat of the heater leg from radiating to the outer peripheral wall of the crucible, so that oxygen atoms in the crucible are not easily separated out, oxygen content in a crystal can be reduced, and growth quality of the crystal can be ensured.

The crystal growth apparatus according to an embodiment of the present utility model includes: a furnace body; the crucible is arranged in the furnace body, and the crucible is internally suitable for placing raw materials for producing crystals; the heater is arranged in the furnace body and is positioned between the furnace body and the crucible, the heater is used for heating the crucible and comprises a main heater, two heater supporting legs and two heater feet, the main heater surrounds the periphery side of the crucible and is positioned at the upper part of the crucible, the two heater supporting legs are oppositely arranged along the radial direction of the crucible, the upper end of each heater supporting leg is connected with the main heater, the lower end of each heater supporting leg is provided with the heater foot, and the heater foot is positioned below the crucible; the baffle is positioned on the outer peripheral side of the crucible and below the main heater, at least part of the baffle is positioned between the outer peripheral wall of the crucible and the heater supporting legs, the baffle is spaced from at least one of the crucible and the heater supporting legs, and the baffle is a high-temperature resistant member.

According to the crystal growth equipment provided by the embodiment of the utility model, the baffle piece is arranged between the outer peripheral wall of the crucible and the heater supporting leg, and can be used for blocking the heat of the heater supporting leg from radiating to the outer peripheral wall of the crucible, so that oxygen atoms in the crucible are not easy to separate out, the oxygen content in a crystal can be reduced, and the growth quality of the crystal can be ensured.

According to some embodiments of the utility model, the barrier surrounds the crucible on the outer peripheral side and is annular.

According to some embodiments of the utility model, the height of the barrier in the up-down direction is h1, the height of the heater leg in the up-down direction is h2, and the ratio of h1 to h2 is greater than 0.7.

According to some embodiments of the utility model, a protective bottom plate is arranged in the furnace body, the protective bottom plate is positioned below the crucible, and the bottom of the baffle piece is connected with the protective bottom plate.

According to some alternative embodiments of the utility model, the heater feet are located below the protective floor.

According to some alternative embodiments of the present utility model, the crystal growth apparatus includes a first heat insulating layer provided between an inner peripheral wall of the furnace body and an outer peripheral side of the heater, and a second heat insulating layer provided at a bottom of the first heat insulating layer and at least partially between a bottom wall of the furnace body and the protective bottom plate, the second heat insulating layer being formed with a receiving groove in which the heater foot is received.

According to some embodiments of the utility model, the barrier is a silicon carbide piece, a graphite piece, a graphene piece, or a carbon fiber composite piece.

According to some embodiments of the utility model, the heater leg extends in a non-straight line in an up-down direction to form an accommodation space between the heater leg and an outer peripheral wall of the crucible for accommodating at least part of the barrier.

According to some alternative embodiments of the utility model, the heater leg comprises: the crucible comprises a first support leg section and a second support leg section, wherein the first support leg section extends along the radial direction of the crucible, the second support leg section extends along the up-down direction, the upper end of the second support leg section is connected with one end, far away from the crucible, of the first support leg section, one end, close to the crucible, of the first support leg section is connected with the lower end of the main heater, and an accommodating space for accommodating at least part of the baffle piece is formed between the second support leg section and the peripheral wall of the crucible.

According to some alternative embodiments of the utility model, the distance between the second leg section and the peripheral wall of the crucible is d1, the distance between the main heater and the peripheral wall of the crucible is d2, and d1 is greater than d2.

Additional aspects and advantages of the utility model will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the utility model.

Drawings

The foregoing and/or additional aspects and advantages of the utility model will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:

fig. 1 is a schematic diagram of a crystal growth apparatus according to some embodiments of the utility model.

2. A crucible;

3. a heater; 31. a main heater; 32. a heater leg; 321. a first leg segment; 322. a second leg segment; 33. a heater foot;

4. a barrier;

51. a first heat-retaining layer; 52. a second heat-insulating layer; 521. an accommodating groove; 54. an accommodation space.

Detailed Description

Embodiments of the present utility model are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the utility model.

A crystal growth apparatus 10 according to an embodiment of the present utility model is described below with reference to fig. 1.

According to the crystal growing apparatus 10 of the embodiment of the present utility model, referring to fig. 1, the crystal growing apparatus 10 includes a furnace body 1, a crucible 2, a heater 3, and a baffle 4, the crucible 2 is provided in the furnace body 1, a raw material for producing crystals is placed in the crucible 2, and for example, the raw material for producing crystals in the crucible 2 may be a silicon material. The crystal growth apparatus 10 may be a single crystal growth apparatus, and the crystal growth apparatus 10 may be used to grow single crystals, for example, may be used to grow single crystal silicon.

The heater 3 is arranged in the furnace body 1, the heater 3 is arranged between the furnace body 1 and the crucible 2, the heater 3 is used for heating the crucible 2, for example, the heater 3 can heat silicon materials in the crucible 2, the heated silicon materials can form a silicon melt, and the silicon melt can grow monocrystalline silicon. The heater 3 includes main heater 31, two heater landing legs 32 and two heater feet 33, and main heater 31 encircles the periphery side at crucible 2 and is located the upper portion of crucible 2, and two heater landing legs 32 are along the radial relative setting of crucible 2, and the upper end and the main heater 31 of every heater landing leg 32 link to each other, and the lower extreme of every heater landing leg 32 is equipped with heater foot 33, and heater foot 33 is located the below of crucible 2, and heater landing leg 32 and heater foot 33 can be integrated into one piece. The main heater 31 may heat the crucible 2 to facilitate the crystal growth apparatus 10 to grow crystals; the two heater legs 32 and the two heater feet 33 have a supporting effect on the main heater 31.

The baffle 4 is located on the outer peripheral side of the crucible 2, and the baffle 4 is located below the main heater 31, and at least a portion of the baffle 4 is located between the outer peripheral wall of the crucible 2 and the heater leg 32, or the entire baffle 4 is located between the outer peripheral wall of the crucible 2 and the heater leg 32. The baffle 4 is spaced apart from at least one of the crucible 2 and the heater leg 32, and may be that the baffle 4 is spaced apart from the crucible 2, the baffle 4 abutting the heater leg 32; the baffle 4 may be spaced apart from the heater leg 32, and the baffle 4 may abut the crucible 2; it is also possible that the barrier 4 is spaced apart from the crucible 2 and the barrier 4 is spaced apart from the heater leg 32. The temperature is higher when the heater landing leg 32 heats, and the baffle 4 is high temperature resistant piece, can prevent that the baffle 4 warp under high temperature, can guarantee the structural strength of baffle 4.

In the process of growing crystals by the crystal growing device 10, the heater 3 can heat the crucible 2, and when the crucible 2 is in a high-temperature environment, part of oxygen in the crucible 2 is melted into silicon melt in the crucible 2, and the growth quality of the crystals can be affected by the excessive oxygen content in the silicon melt. The main heater 31 may heat the crucible 2 to facilitate the crystal growth apparatus 10 to grow crystals; the two heater legs 32 and the two heater feet 33 have supporting functions on the main heater 31, and the heater legs 32 have heat radiation on the lower side of the crucible 2, so that the temperature of the crucible 2 is increased, oxygen atoms are separated out from the lower side of the crucible 2, the oxygen content in the silicon melt is too high, and the growth quality of crystals is further affected. By providing the barrier 4 between the outer peripheral wall of the crucible 2 and the heater leg 32, the barrier 4 can be used to block the heat of the heater leg 32 from radiating to the outer peripheral wall of the crucible 2, so that oxygen atoms in the crucible 2 are not easy to precipitate, the oxygen content in the crystal can be reduced, and the growth quality of the crystal can be ensured.

According to the crystal growth apparatus 10 of the embodiment of the present utility model, by providing the barrier 4 between the outer peripheral wall of the crucible 2 and the heater leg 32, the barrier 4 can be used to block the heat of the heater leg 32 from radiating to the outer peripheral wall of the crucible 2, so that oxygen atoms in the crucible 2 are not likely to be separated out, the oxygen content in the crystal can be reduced, and the growth quality of the crystal can be ensured.

According to some embodiments of the present utility model, referring to fig. 1, the barrier 4 surrounds the outer circumferential side of the crucible 2, and the barrier 4 is ring-shaped, the barrier 4 may completely space the crucible 2 from the heater leg 32 such that heat of the heater leg 32 is not easily radiated to the lower side of the crucible 2.

According to some embodiments of the present utility model, referring to fig. 1, the height of the barrier 4 in the up-down direction is h1, the height of the heater leg 32 in the up-down direction is h2, and the ratio of h1 to h2 is greater than 0.7, it is ensured that the barrier 4 spaces the heater leg 32 from the crucible 2 in the up-down direction, so that the heat of the heater leg 32 is not easily radiated to the lower side of the crucible 2.

According to some embodiments of the present utility model, referring to fig. 1, a protection bottom plate 11 is disposed in the furnace body 1, the protection bottom plate 11 is located below the crucible 2, and the bottom of the baffle 4 is connected with the protection bottom plate 11, so that the baffle 4 can be conveniently installed and fixed, and the overall structural strength of the baffle 4 is higher.

According to some alternative embodiments of the present utility model, referring to fig. 1, the heater feet 33 are located below the protection bottom plate 11, and the protection bottom plate 11 can block heat on the heater feet 33 from radiating to the bottom of the crucible 2, so that oxygen atoms in the crucible 2 are not easy to separate out, the oxygen content in the crystal can be reduced, and the growth quality of the crystal can be ensured.

According to some alternative embodiments of the present utility model, referring to fig. 1, the crystal growth apparatus 10 includes a first heat insulating layer 51 and a second heat insulating layer 52, the first heat insulating layer 51 being provided between an inner peripheral wall of the furnace body 1 and an outer peripheral side of the heater 3, the second heat insulating layer 52 being provided at a bottom of the first heat insulating layer 51, the first heat insulating layer 51 and the second heat insulating layer 52 being for insulating heat of the heater 3, preventing heat of the heater 3 from being dissipated, which is disadvantageous for the crystal growth apparatus 10 to grow crystals. And at least part of the second heat-insulating layer 52 is located between the bottom wall of the furnace body 1 and the protective bottom plate 11, and may be that a part of the second heat-insulating layer 52 is located between the bottom wall of the furnace body 1 and the protective bottom plate 11, or that the whole second heat-insulating layer 52 is located between the bottom wall of the furnace body 1 and the protective bottom plate 11. The second insulation layer 52 is formed with the accommodation groove 521, and the heater foot 33 is accommodated in the accommodation groove 521, so that the installation and fixation of the heater foot 33 can be facilitated.

According to some embodiments of the utility model, referring to fig. 1, the barrier 4 is a silicon carbide piece, a graphite piece, a graphene piece or a carbon fiber composite piece, which are all high temperature resistant pieces. When the heater landing leg 32 heats, the temperature of the heater landing leg 32 is higher, and the baffle 4 is a high temperature resistant piece, so that the baffle 4 can be prevented from being deformed at high temperature, and the structural strength of the baffle 4 can be ensured.

According to some embodiments of the present utility model, referring to fig. 1, the heater leg 32 extends in a non-straight line in the up-down direction so that an accommodating space 54 is formed between the heater leg 32 and the outer circumferential wall of the crucible 2, and the accommodating space 54 is used for accommodating at least a portion of the barrier 4, which may be a portion of the barrier 4, in the accommodating space 54, or the entire barrier 4 in the accommodating space 54. An accommodation space 54 is formed between the heater leg 32 and the outer peripheral wall of the crucible 2, which can facilitate layout installation of the barrier 4.

According to some alternative embodiments of the present utility model, referring to fig. 1, the heater leg 32 includes a first leg section 321 extending in a radial direction of the crucible 2, and a second leg section 322 extending in an up-down direction. The upper end of the second leg section 322 is connected to the end of the first leg section 321 away from the crucible 2, the lower end of the second leg section 322 is connected to the end of the heater foot 33 away from the crucible 2, the end of the first leg section 321 adjacent to the crucible 2 is connected to the lower end of the main heater 31, and an accommodating space 54 is formed between the second leg section 322 and the outer peripheral wall of the crucible 2, and the accommodating space 54 is used for accommodating at least part of the barrier 4, which may be a part of the barrier 4 accommodated in the accommodating space 54, or may be the whole barrier 4 accommodated in the accommodating space 54. The barrier 4 is mainly used to block the heat of the second leg section 322 from radiating to the crucible 2, so that oxygen atoms in the crucible 2 are not easily separated out, and the growth quality of crystals can be ensured.

According to some alternative embodiments of the present utility model, referring to fig. 1, the distance between the second leg section 322 and the outer peripheral wall of the crucible 2 is d1, and the distance between the main heater 31 and the outer peripheral wall of the crucible 2 is d2, d1 being greater than d2. In contrast, the main heater 31 is closer to the outer peripheral wall of the crucible 2 than the second leg section 322, so that the main heater 31 can heat the upper portion of the crucible 2, thereby facilitating the crystal growth of the crystal growth apparatus 10; the second leg section 322 is far away from the outer peripheral wall of the crucible 2 than the main heater 31 so that the temperature of the upper portion of the crucible 2 is higher than the temperature of the lower portion of the crucible 2, so that oxygen atoms in the crucible 2 are not easily separated out, the oxygen content in the crystal can be reduced, and the growth quality of the crystal can be ensured.

In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the utility model. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

While embodiments of the present utility model have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the utility model, the scope of which is defined by the claims and their equivalents.

Claims

1. A crystal growth apparatus, comprising:

a furnace body;

the crucible is arranged in the furnace body, and the crucible is internally suitable for placing raw materials for producing crystals;

the heater is arranged in the furnace body and is positioned between the furnace body and the crucible, the heater is used for heating the crucible and comprises a main heater, two heater supporting legs and two heater feet, the main heater surrounds the periphery side of the crucible and is positioned at the upper part of the crucible, the two heater supporting legs are oppositely arranged along the radial direction of the crucible, the upper end of each heater supporting leg is connected with the main heater, the lower end of each heater supporting leg is provided with the heater foot, and the heater foot is positioned below the crucible;

the baffle is positioned on the outer peripheral side of the crucible and below the main heater, at least part of the baffle is positioned between the outer peripheral wall of the crucible and the heater supporting legs, the baffle is spaced from at least one of the crucible and the heater supporting legs, and the baffle is a high-temperature resistant member.

2. The crystal growing apparatus according to claim 1, wherein the baffle member surrounds an outer peripheral side of the crucible and is ring-shaped.

3. The crystal growth apparatus according to claim 1, wherein the height of the barrier in the up-down direction is h1, the height of the heater leg in the up-down direction is h2, and a ratio of h1 to h2 is greater than 0.7.

4. The crystal growth apparatus of claim 1, wherein a shielding bottom plate is disposed within the furnace body, the shielding bottom plate being positioned below the crucible, the bottom of the barrier being connected to the shielding bottom plate.

5. The crystal growing apparatus of claim 4 wherein the heater feet are located below the shield floor.

6. The crystal growth apparatus of claim 5, comprising a first thermal insulation layer disposed between an inner peripheral wall of the furnace body and an outer peripheral side of the heater, and a second thermal insulation layer disposed at a bottom of the first thermal insulation layer and at least partially between a bottom wall of the furnace body and the protective bottom plate, the second thermal insulation layer being formed with a receiving recess in which the heater foot is received.

7. The crystal growth apparatus of claim 1, wherein the barrier member is a silicon carbide member, a graphite member, a graphene member, or a carbon fiber composite member.

8. The crystal growth apparatus according to any one of claims 1 to 7, wherein the heater leg extends in a non-straight line in an up-down direction to form an accommodation space for accommodating at least part of the barrier between the heater leg and an outer peripheral wall of the crucible.

9. The crystal growing apparatus of claim 8 wherein the heater leg comprises: the crucible comprises a first support leg section and a second support leg section, wherein the first support leg section extends along the radial direction of the crucible, the second support leg section extends along the up-down direction, the upper end of the second support leg section is connected with one end, far away from the crucible, of the first support leg section, one end, close to the crucible, of the first support leg section is connected with the lower end of the main heater, and an accommodating space for accommodating at least part of the baffle piece is formed between the second support leg section and the peripheral wall of the crucible.

10. The crystal growing apparatus of claim 9 wherein the distance between the second leg section and the outer peripheral wall of the crucible is d1, the distance between the main heater and the outer peripheral wall of the crucible is d2, and the d1 is greater than the d2.