CN108330531A - The monocrystal stove of silicon monocrystal growth process control is carried out with high frequency waves - Google Patents
The monocrystal stove of silicon monocrystal growth process control is carried out with high frequency waves Download PDFInfo
- Publication number
- CN108330531A CN108330531A CN201810243378.2A CN201810243378A CN108330531A CN 108330531 A CN108330531 A CN 108330531A CN 201810243378 A CN201810243378 A CN 201810243378A CN 108330531 A CN108330531 A CN 108330531A
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- China
- Prior art keywords
- crucible
- furnace body
- wave
- monocrystal
- hole
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
Abstract
This disclosure relates to which a kind of carrying out silicon monocrystal growth process control with high frequency waves, it is characterized by comprising furnace bodies, and crucible, wherein, the crucible is located in furnace body, for accommodating raw material, wherein, the side wall of the furnace body and/or bottom are disposed with feedback wave hole, for being docked with external microwave heating component, to be heated to the raw material in crucible, the crucible clamps pot by quartz, and it is sleeved on the graphite pincers pot composition outside the quartz pincers pot, the bottom of the graphite crucible is connected with crucible axis, the crucible axis runs through from the bottom of the furnace body, for moving up and down and rotating the crucible during monocrystalline silicon growing.The disclosure provides thermal energy using microwave, make full use of the frequency and wavelength characteristic of wave energy, direct high-efficiency heating silicon material can be reached but also get around the energy-absorbing waste of medium, accomplish efficient, Flashmelt according to the characteristic of polycrystal material, sufficiently large thermal field gradient is provided during crystal growth, to obtain maximum growth rate, production efficiency is improved.
Description
Technical field
The invention belongs to semiconductor, integrated circuit, solar product production fields, and in particular to the life of vertical pulling silicon single crystal rod
It produces, more particularly to carries out the monocrystal stove of silicon monocrystal growth process control with high frequency waves.
Background technology
Monocrystalline silicon is generally used for manufacture integrated circuit and other electronic components, at present monocrystalline as a kind of semi-conducting material
There are two types of the growing technologies of silicon：Zone-melting process and CZ (vertical pulling) method, wherein vertical pulling method are currently widely used method.
When vertical pulling method manufactures monocrystalline silicon, polycrystal material is placed in silica crucible, makes its fusing by high-temperature heating, so
Seed crystal is fallen by top into the polysilicon of fusing afterwards, by controlling the temperature of liquid level, makes the polysilicon of fusing around seed crystal
It recrystallizes, generates the silicon single crystal rod of marshalling.
For the manufacturing method of the known monocrystalline silicon based on vertical pulling method, global solar level and semiconductor and integrated electricity
The production process of road grade silicon stick is to be melted polycrystalline silicon material using DC electrically heating mode, and then incorporation is appropriate required
Impurity has D.C. resistance to lead to high-intensity currrent and forms heater, be the growth course of crystal bar then under the action of thermal insulation material
Enough heats are provided to make up the energy loss caused by environment temperature reduces, monocrystalline is carried out under opposite thermal equilibrium condition
Silicon rod growth course is controlled.
Therefore, there are many drawbacks for existing vertical pulling silicon single crystal rod growth technique：
1, due to using resistance heating manner to provide thermal energy for thermal field, it is relatively low that electric energy is converted into heat energy efficiency, causes resource
Waste；
2, thermal energy presentation mode defect is apparent：The resistance heating of logical direct current, thereafter through holding in the palm crucible-in a manner of heat radiation
Clean crucible-the polycrystalline silicon material of isolation carrys out transferring heat energy, and such heat is transmitted or heat poor, causes compared with multiple-energy-source via thermal field ring
Border is scattered and disappeared, and not only waste of energy, is also greatly reduced the service life of thermal field thermal insulation material, causes production cost high；
3, the silicon single crystal bar production technology of such DC electrically heating cannot fully increase each gradient of thermal field/thermal field
(including the radial direction of thermal field/longitudinal direction gradient, the radial direction of melt/longitudinal direction gradient, radial direction of crystal/longitudinal direction gradient), causes crystal bar to be given birth to
It cannot be substantial access to crystalline limit rate during length, production efficiency is made to substantially reduce, cause the waste of larger manpower, resource.
Invention content
To solve above-mentioned many drawbacks of current technology, the present invention is according to monocrystalline silicon material and the characteristic system of silicon single crystal bar entirety
At using new energy presentation mode.
According to an embodiment of the invention, a kind of silicon single crystal carrying out silicon monocrystal growth process control with high frequency waves is provided
Stove, it is characterised in that including furnace body (1) and crucible (2,3), wherein the crucible (2,3) is located in furnace body (1), is used for
Accommodate raw material, wherein the side wall of the furnace body (1) and/or bottom are disposed with feedback wave hole (7,9), for being heated with external microwave
Component docks, to be heated to the raw material in crucible (2,3).
According to an embodiment of the invention, the crucible (2,3) by quartz pincers pot (3) and is sleeved on the quartz pincers pot (3)
Outer graphite pincers pot (2) forms, and the bottom of the graphite crucible (2) is connected with crucible axis (10), and the crucible axis (10) is from institute
The bottom for stating furnace body (1) is run through, for moving up and down and rotating the crucible (2,3) during monocrystalline silicon growing.
According to an embodiment of the invention, furnace body (1) inner wall is additionally provided with the insulating layer made of wave arrestment material (4), uses
In maintenance in-furnace temperature.
According to an embodiment of the invention, it is additionally provided with guide shell 5 above the crucible (2,3).
According to an embodiment of the invention, multiple feedback wave holes (7) are arranged in equal spacing with the side wall of the furnace body (1) is contour,
And/or multiple feedback wave holes (9) are disposed in the form of circumferential arrangement in the bottom of the furnace body (1).
According to an embodiment of the invention, multiple feedback wave holes (7) are arranged in equal spacing with the side wall of the furnace body (1) is contour,
Also, the feedback wave hole (7) runs through institute's insulating layer (4), wherein the size and the crucible (2,3) of the feedback wave hole (7)
It is effective area matched by wave.
According to an embodiment of the invention, it is equipped with wave transparent sealing block (8) in the furnace wall outer surface of the furnace body (1), for covering
Feedback wave hole (7,9) is stated in residence, is sealed the furnace body (1) and is not influenced wave transparent.
According to an embodiment of the invention, the upper and lower side on the inside of the feedback wave hole (7) is equipped with wave arrestment cover (6), for microwave
Rotation angle.
According to an embodiment of the invention, the outer wall of the graphite crucible (2) has the through-hole for making microwave pass through.
According to an embodiment of the invention, the furnace body (1) is connected to external microwave heating group via the feedback wave hole (7,9)
Part, wherein the external microwave heating component includes waveguide, magnetron, control unit, wherein the waveguide with it is described
Present wave hole (7,9) docking, the microwave transmission that the waveguide is used to generate from magnetron to the feedback wave hole (7,9), institute in side
Control unit is stated for carrying out vibrational control to magnetron.
Compared with prior art, the present invention has the following advantages：
1) use microwave (such as 2450 megahertzs and 915 megahertzs) to provide thermal energy, make full use of the frequencies of both wave energy with
Wavelength characteristic can reach direct high-efficiency heating silicon material but also get around the energy-absorbing waste of medium, can be effective using such mode
The three big drawbacks for avoiding current technology, achieve the purpose that upgrading synergy cost declining；
2) it can accomplish efficient, Flashmelt according to the characteristic of polycrystal material, sufficiently large temperature is provided during crystal growth
Field gradient improves production efficiency to obtain maximum growth rate.
Description of the drawings
Fig. 1 is the knot of the monocrystal stove according to an embodiment of the invention that silicon monocrystal growth process control is carried out with high frequency waves
Structure schematic diagram.
Specific implementation mode
In the following, being described in further detail to the implementation of technical solution in conjunction with attached drawing.
It will be appreciated by those of skill in the art that although the following description is related to many of embodiment for the present invention
Technical detail, but be only for not meaning that any restrictions for illustrating the example of the principle of the present invention.The present invention can be applicable in
In different from the occasion except technical detail exemplified below, without departing from the principle and spirit of the invention.
It, may pair can be in description in the present specification in addition, tedious in order to avoid making the description of this specification be limited to
The portion of techniques details obtained in prior art data has carried out the processing such as omission, simplification, accommodation, this technology for this field
It will be understood by for personnel, and this does not interfere with the open adequacy of this specification.
It elaborates below in conjunction with the accompanying drawings to the present invention.
Fig. 1 is that the structure of the device according to an embodiment of the invention that silicon monocrystal growth process control is carried out with high frequency waves is shown
It is intended to；
As shown in Figure 1, the monocrystal stove include furnace body 1, graphite pincers pot 2, quartz pincers pot 3, insulating layer 4, guide shell 5,
Wave arrestment cover 6.
Wherein, the inner containment graphite crucible 2 of the furnace body 1, the graphite crucible 2 is interior to accommodate silica crucible 4, the stone
The bottom of black crucible 2 is connected with crucible axis 10, and the crucible axis runs through from the bottom of the furnace body 1, in monocrystalline silicon growing
It moves up and down in the process and rotating crucible.
Wherein, the insulating layer 4 is located between the furnace body 1 and graphite pincers pot, described for maintaining in-furnace temperature
Guide shell is located above crucible, for the cooling to helping silicon single crystal, and then can improve the speed that silicon single crystal lifts upwards
Degree.The insulating layer 4 every wave (wave arrestment) material by being made.
Wherein, as an example, the side wall of the furnace body 1 is contour to be arranged in equal spacing with feedback wave hole (presenting wave hole 7 in side), that is, edge
Horizontal circle is circumferential to be provided with multiple through-holes for wave transparent at furnace wall (side wall)；Meanwhile furnace wall outer surface is equipped with wave transparent sealing block 8,
For covering feedback wave hole, playing the role of sealing and not influencing wave transparent.
The position (height, the i.e. distance away from furnace bottom) of the side feedback wave hole 7 and size and the positions and dimensions of crucible coordinate,
High frequency waves (for example, microwave of 915MHz) will pass through side feedback wave hole feeding can enter the feed location in crucible.
Optionally, the relatively low position of the side wall of the furnace body 1 (position for being less than crucible) is equipped with bleeding point 11, bleeding point
11 outsides are equipped with dismountable sealing block.
Optionally, the bottom of the furnace body 1 is also disposed with feedback wave hole (presenting wave hole 9 in bottom), that is, in the bottom surface of the furnace body 1
Furnace wall, which is also circular layout, multiple through-holes for wave transparent, and the bottom feedback wave hole is equally spaced around the center of circle.Similarly, bottom
It also equally is provided with wave transparent sealing block 8 outside feedback wave hole 9, for covering feedback wave hole, playing the role of sealing and not influencing wave transparent.
It is also similar that the considerations of size setting of wave hole 9 factor is presented with side feedback wave hole 7 in bottom.
It can be seen that the size and the crucible 2 and 3 of the feedback wave hole 7 and 9 are area matched by wave, that is, the feedback wave hole
7 and 9 are sized to ensure that microwave emits to the raw material of quartz pincers pot 3, and do not leak into too much other inside furnace body 1
Position.
Wherein, the wave arrestment cover 6 is located between insulating layer 4 and graphite crucible, and the location matches of wave hole are presented with side,
That is, the upper and lower ends on the inside of side feedback wave hole, form the two annular slices partition for being fixed in 1 inner wall of furnace body, for making
It is transmitted in crucible in the horizontal direction substantially via the microwave of feedback wave hole feed-in, that is, putting for microwave is limited by the wave arrestment cover
Firing angle degree.Similarly, the both ends on the inside of bottom feedback wave hole may also set up wave arrestment cover 6.
In addition, although not shown in the drawings, it will be appreciated by those skilled in the art that side feedback wave hole and/or bottom feedback
Wave hole is connected to external microwave heating component.
As an example, external microwave heating component includes waveguide, magnetron, control unit, wherein the waveguide with
The side feedback wave hole and/or bottom feedback wave docking (it is appreciated that centre can be separated with sealing block), the waveguide is used for will be from magnetic control
The microwave transmission that pipe generates is to the feedback wave hole, and later, microwave enters inside furnace body 1, and the control unit is used for magnetron
Carry out vibrational control.Optionally, waveguide pipe end is also associated with transmitting antenna.It is appreciated that in order to make microwave from multiple feedback waves
In hole feed-in single crystal growing furnace, the waveguide can be connected with branch joint, microwave (power) distribution for will be generated from magnetron
To multiple feedback wave holes, and it is sent into single crystal growing furnace to be heated to raw material.
Wherein, the side wall of the graphite crucible 2 forms netted wave transparent skeleton, for example, the shell tool of the graphite crucible 2
There are a diameter of 10 millimeters, the equally distributed through-hole that spacing is 20 millimeters.
Optionally, in the case where the bottom of the furnace body 1 is disposed with feedback wave hole (bottom feedback wave hole), the bottom of graphite crucible 2
Portion is provided with the through-hole for making microwave pass through.
By above-mentioned arrangement, 2450 megahertzs or 915 megahertzs of high-frequency energy wave can be used to provide for external microwave heating component
Thermal energy makes full use of the frequency and wavelength characteristic of both wave energy, can reach direct high-efficiency heating silicon material but also get around medium
Energy-absorbing waste, using such mode it is possible to prevente effectively from the above-mentioned drawback of current technology, reaches the mesh of upgrading synergy cost declining
's.
Due to eliminating the electrod assembly in traditional single crystal growing furnace, there can be more spaces to arrange other portions in furnace body
Part, such as heat preservation component, which increase the flexibility ratios (for example, can increase the thickness of insulating layer (4)) of equipment design, alternatively, also having
Conducive to the size of reduction furnace body.
It is obtained through overtesting：Using the microwave heating component of 2450MHz, power 2000W, by 1 hour
Heating, 0.45 kilogram of raw material can be melted, the efficiency of heating surface is much better than resistance-type mode of heating.
In conclusion the present invention is protected with to the drawing process for carrying out silicon single crystal with 915 and 2450 megahertzs of high frequency waves,
This invention can accomplish efficient, Flashmelt according to the characteristic of polycrystal material, and sufficiently large thermal field is provided during crystal growth
Gradient, the i.e. diameter of thermal field, longitudinal gradient；The diameter of melt, longitudinal gradient；The diameter of crystal, longitudinal gradient, realization principle is thermal field
Relative displacement occurs in crystal growing process for component to obtain maximum growth rate, improves production efficiency.
Finally, it will be appreciated by those of skill in the art that can make various modifications to the above embodiment of the present invention, become
Type and replacement, each fall within protection scope of the present invention as defined in the appended claims.
Claims (10)
1. a kind of monocrystal stove carrying out silicon monocrystal growth process control with high frequency waves, it is characterised in that including furnace body (1) and
Crucible (2,3),
Wherein, the crucible (2,3) is located in furnace body (1), for accommodating raw material,
Wherein, the side wall of the furnace body (1) and/or bottom are disposed with feedback wave hole (7,9), are used for and external microwave heating component pair
It connects, to be heated to the raw material in crucible (2,3).
2. monocrystal stove according to claim 1, which is characterized in that the crucible (2,3) by quartz pincers pot (3) and
The graphite pincers pot (2) of the quartz pincers pot (3) outside is sleeved on to form,
The bottom of the graphite crucible (2) is connected with crucible axis (10), and the crucible axis (10) is passed through from the bottom of the furnace body (1)
It wears, for moving up and down and rotating the crucible (2,3) during monocrystalline silicon growing.
3. monocrystal stove according to claim 2, which is characterized in that furnace body (1) inner wall is additionally provided with by wave arrestment material
Manufactured insulating layer (4), for maintaining in-furnace temperature.
4. monocrystal stove according to claim 1, which is characterized in that be additionally provided with guide shell 5 above the crucible (2,3).
5. monocrystal stove according to claim 1, which is characterized in that in the contour equidistant cloth of the side wall of the furnace body (1)
Multiple feedback wave holes (7) are equipped with, and/or, multiple feedback wave holes are disposed in the form of circumferential arrangement in the bottom of the furnace body (1)
(9)。
6. monocrystal stove according to claim 3, which is characterized in that in the contour equidistant cloth of the side wall of the furnace body (1)
Multiple feedback wave holes (7) are equipped with, also, the feedback wave hole (7) runs through institute's insulating layer (4),
Wherein, size and the crucible (2,3) of the feedback wave hole (7) is effective area matched by wave.
7. monocrystal stove according to claim 1, which is characterized in that be equipped in the furnace wall outer surface of the furnace body (1) saturating
Wave sealing block (8) seals the furnace body (1) and does not influence wave transparent for covering the feedback wave hole (7,9).
8. the monocrystal stove according to claim 5 or 7, which is characterized in that the upper and lower side on the inside of the feedback wave hole (7) is equipped with
Wave arrestment cover (6) is used for the rotation angle of microwave.
9. monocrystal stove according to claim 2, which is characterized in that the outer wall of the graphite crucible (2) has for making
Microwave by through-hole.
10. monocrystal stove according to claim 1, which is characterized in that the furnace body (1) is via the feedback wave hole (7,9)
It is connected to external microwave heating component,
Wherein, the external microwave heating component includes waveguide, magnetron, control unit, wherein the waveguide with it is described
Present wave hole (7,9) docking, the microwave transmission that the waveguide is used to generate from magnetron to the feedback wave hole (7,9), institute in side
Control unit is stated for carrying out vibrational control to magnetron.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810243378.2A CN108330531A (en) | 2018-03-23 | 2018-03-23 | The monocrystal stove of silicon monocrystal growth process control is carried out with high frequency waves |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810243378.2A CN108330531A (en) | 2018-03-23 | 2018-03-23 | The monocrystal stove of silicon monocrystal growth process control is carried out with high frequency waves |
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| CN108330531A true CN108330531A (en) | 2018-07-27 |
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ID=62931246
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| CN201810243378.2A Pending CN108330531A (en) | 2018-03-23 | 2018-03-23 | The monocrystal stove of silicon monocrystal growth process control is carried out with high frequency waves |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110078079A (en) * | 2019-05-30 | 2019-08-02 | 重庆大全泰来电气有限公司 | A kind of electronic grade high-purity polycrystalline reduction starting device and starting method |
| CN110760929A (en) * | 2019-12-02 | 2020-02-07 | 大连威凯特科技有限公司 | Production equipment of straight pull type single crystal silicon rod |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110078079A (en) * | 2019-05-30 | 2019-08-02 | 重庆大全泰来电气有限公司 | A kind of electronic grade high-purity polycrystalline reduction starting device and starting method |
| CN110760929A (en) * | 2019-12-02 | 2020-02-07 | 大连威凯特科技有限公司 | Production equipment of straight pull type single crystal silicon rod |
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