CN208151519U - The monocrystal stove of silicon monocrystal growth process control is carried out with high frequency waves - Google Patents
The monocrystal stove of silicon monocrystal growth process control is carried out with high frequency waves Download PDFInfo
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- CN208151519U CN208151519U CN201820399056.2U CN201820399056U CN208151519U CN 208151519 U CN208151519 U CN 208151519U CN 201820399056 U CN201820399056 U CN 201820399056U CN 208151519 U CN208151519 U CN 208151519U
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Abstract
This disclosure relates to a kind of monocrystal stove for carrying out silicon monocrystal growth process control with high frequency waves, it is characterized by comprising furnace bodies, and crucible, wherein, the crucible is located in furnace body, for accommodating raw material, wherein, the side wall of the furnace body and/or bottom are disposed with feedback wave hole, for being docked with external microwave heating component, to be heated to the raw material in crucible, the crucible is by quartz crucible, and cover the black-fead crucible composition outside the quartz crucible, the bottom of the graphite crucible is connected with crucible axis, the crucible axis runs through from the bottom of the furnace body, for moving up and down and rotating the crucible during monocrystalline silicon growing.The disclosure provides thermal energy using microwave, make full use of the frequency and wavelength characteristic of wave energy, direct high-efficiency heating silicon material can be reached but also get around the energy-absorbing waste of medium, accomplish efficient, Flashmelt according to the characteristic of polycrystal material, sufficiently large thermal field gradient is provided during crystal growth, to obtain maximum growth rate, production efficiency is improved.
Description
Technical field
The utility model belongs to semiconductor, integrated circuit, solar product production field, and in particular to vertical pulling silicon single crystal rod
Production, more particularly to carry out with high frequency waves the monocrystal stove of silicon monocrystal growth process control.
Background technique
Monocrystalline silicon is generally used for manufacture integrated circuit and other electronic components, at present monocrystalline as a kind of semiconductor material
There are two types of the growing technologies of silicon：Zone-melting process and CZ (vertical pulling) method, wherein vertical pulling method is currently widely used method.
When vertical pulling method manufactures monocrystalline silicon, polycrystal material is placed in silica crucible, makes its fusing by high-temperature heating, so
Seed crystal is fallen by top into the polysilicon of fusing afterwards, by controlling the temperature of liquid level, makes the polysilicon of fusing around seed crystal
It recrystallizes, generates the silicon single crystal rod of marshalling.
For the manufacturing method of the known monocrystalline silicon based on vertical pulling method, global solar level and semiconductor and integrated electricity
The production process of road grade silicon stick is to be melted polycrystalline silicon material using DC electrically heating mode, needed for then incorporation is appropriate
Impurity has D.C. resistance to lead to high-intensity currrent and forms heater, be the growth course of crystal bar then under the action of thermal insulation material
Enough heats are provided to make up environment temperature and reduce caused energy loss, monocrystalline is carried out under opposite thermal equilibrium condition
Silicon rod growth course is controlled.
Therefore, there are many drawbacks for existing vertical pulling silicon single crystal rod growth technique：
1, due to using resistance heating manner to provide thermal energy for thermal field, it is lower that electric energy is converted into heat energy efficiency, causes resource
Waste；
2, thermal energy presentation mode defect is obvious：The resistance heating of logical direct current, thereafter through holding in the palm crucible-in a manner of heat radiation
Clean crucible-polycrystalline silicon material is isolated and carrys out transferring heat energy, such heat transmitting or heats poor, causes compared with multiple-energy-source via thermal field environment
It scatters and disappears, not only waste of energy, is also greatly reduced the service life of thermal field thermal insulation material, causes production cost high；
3, the silicon single crystal bar production technology of such DC electrically heating cannot sufficiently increase each gradient of thermal field/thermal field
(radial direction including thermal field/longitudinal direction gradient, the radial direction of melt/longitudinal direction gradient, the radial direction of crystal/longitudinal direction gradient) causes crystal bar raw
It cannot be substantial access to crystalline limit rate during length, substantially reduce production efficiency, cause the waste of biggish manpower, resource.
Utility model content
For the above-mentioned many drawbacks for solving current technology, the utility model is according to the spy of monocrystalline silicon material and silicon single crystal bar entirety
Property is made using new energy presentation mode.
Embodiment according to the present utility model provides a kind of silicon list that silicon monocrystal growth process control is carried out with high frequency waves
Brilliant furnace, it is characterised in that including furnace body (1) and crucible (2,3), wherein the crucible (2,3) is located in furnace body (1), is used for
Accommodate raw material, wherein the side wall of the furnace body (1) and/or bottom are disposed with feedback wave hole (7,9), for heating with external microwave
Component docking, to be heated to the raw material in crucible (2,3).
Embodiment according to the present utility model, the crucible (2,3) is by quartz crucible (3) and covers in the quartzy earthenware
Black-fead crucible (2) composition of pot (3) outside, the bottom of the graphite crucible (2) are connected with crucible axis (10), the crucible axis (10)
Run through from the bottom of the furnace body (1), for moving up and down and rotating the crucible (2,3) during monocrystalline silicon growing.
Embodiment according to the present utility model, furnace body (1) inner wall are additionally provided with the insulating layer made of wave arrestment material
(4), for maintaining in-furnace temperature.
Embodiment according to the present utility model, crucible (the 2,3) top are additionally provided with guide shell 5.
Embodiment according to the present utility model is arranged in equal spacing with multiple feedback wave holes the side wall of the furnace body (1) is contour
(7), and/or, multiple feedback wave holes (9) are disposed in the form of circumferential arrangement in the bottom of the furnace body (1).
Embodiment according to the present utility model is arranged in equal spacing with multiple feedback wave holes the side wall of the furnace body (1) is contour
(7), also, the feedback wave hole (7) runs through institute's insulating layer (4), wherein the size of feedback wave hole (7) and the crucible
(2,3) it is effective area matched by wave.
Embodiment according to the present utility model is equipped with wave transparent sealing block (8) in the furnace wall outer surface of the furnace body (1), uses
In covering the feedback wave hole (7,9), seals the furnace body (1) and do not influence wave transparent.
Embodiment according to the present utility model, the upper and lower side presented on the inside of wave hole (7) is equipped with wave arrestment cover (6), for micro-
The rotation angle of wave.
Embodiment according to the present utility model, the outer wall of the graphite crucible (2) have the through-hole for passing through microwave.
Embodiment according to the present utility model, the furnace body (1) are connected to external microwave via the feedback wave hole (7,9) and add
Hot component, wherein the external microwave heating component includes waveguide, magnetron, control unit, wherein the waveguide with
Side feedback wave hole (the 7,9) docking, the microwave transmission that the waveguide is used to generate from magnetron to the feedback wave hole (7,
9), the control unit is used to carry out vibrational control to magnetron.
Compared with prior art, the utility model has the following advantages that：
1) provide thermal energy using microwave (such as 2450 megahertzs and 915 megahertzs), make full use of the frequencies of both wave energy with
Wavelength characteristic can reach direct high-efficiency heating silicon material but also get around the energy-absorbing waste of medium, can be effective using such mode
The three big drawbacks for avoiding current technology, achieve the purpose that upgrading synergy cost declining；
2) it can accomplish efficient, Flashmelt according to the characteristic of polycrystal material, sufficiently large temperature is provided during crystal growth
Field gradient improves production efficiency to obtain maximum growth rate.
Detailed description of the invention
Fig. 1 is the monocrystal stove that silicon monocrystal growth process control is carried out with high frequency waves of embodiment according to the present utility model
Structural schematic diagram.
Specific embodiment
In the following, being described in further detail in conjunction with attached drawing to the implementation of technical solution.
It will be appreciated by those of skill in the art that although the following description is related to related the embodiments of the present invention
Many technical details, but be only for not meaning that any restrictions for illustrating the example of the principles of the present invention.This is practical
The novel occasion that can be suitable for being different from except technical detail exemplified below, without departing from the original of the utility model
Reason and spirit.
It, may be to can be in description in the present specification in addition, tedious in order to avoid being limited to the description of this specification
The portion of techniques details obtained in prior art data has carried out the processing such as omission, simplification, accommodation, this technology for this field
It will be understood by for personnel, and this will not influence the open adequacy of this specification.
It elaborates with reference to the accompanying drawing to the utility model.
Fig. 1 is the knot of the device that silicon monocrystal growth process control is carried out with high frequency waves of embodiment according to the present utility model
Structure schematic diagram；
As shown in Figure 1, the monocrystal stove include furnace body 1, black-fead crucible 2, quartz crucible 3, insulating layer 4, guide shell 5,
Wave arrestment cover 6.
Wherein, the inner containment graphite crucible 2 of the furnace body 1, the graphite crucible 2 is interior to accommodate silica crucible 4, the stone
The bottom of black crucible 2 is connected with crucible axis 10, and the crucible axis runs through from the bottom of the furnace body 1, in monocrystalline silicon growing
It moves up and down in the process and rotating crucible.
Wherein, the insulating layer 4 is described for maintaining in-furnace temperature between the furnace body 1 and the black-fead crucible
Guide shell is located above crucible, for the cooling to help silicon single crystal, and then the speed that silicon single crystal lifts upwards can be improved
Degree.The insulating layer 4 every wave (wave arrestment) material by being made.
Wherein, as an example, the side wall of the furnace body 1 is contour to be arranged in equal spacing with feedback wave hole (presenting wave hole 7 in side), that is, edge
Horizontal circle is circumferential to be provided with multiple through-holes for wave transparent at furnace wall (side wall)；Meanwhile furnace wall outer surface is equipped with wave transparent sealing block 8,
For covering feedback wave hole, playing the role of sealing and not influencing wave transparent.
The position (height, i.e., away from the distance of furnace bottom) of the side feedback wave hole 7 and size and the positions and dimensions of crucible cooperate,
The feed location in crucible is able to enter will pass through the high frequency waves (for example, microwave of 915MHz) of side feedback wave hole feeding.
Optionally, the relatively low position of the side wall of the furnace body 1 (lower than the position of crucible) is equipped with bleeding point 11, bleeding point
11 outsides are equipped with dismountable sealing block.
Optionally, the bottom of the furnace body 1 is also disposed with feedback wave hole (presenting wave hole 9 in bottom), that is, in the bottom surface of the furnace body 1
Furnace wall, which is also circular layout, multiple through-holes for wave transparent, and the bottom feedback wave hole is equally spaced around the center of circle.Similarly, bottom
It also equally is provided with wave transparent sealing block 8 outside feedback wave hole 9, for covering feedback wave hole, playing the role of sealing and not influencing wave transparent.
It is also similar that the considerations of size setting of wave hole 9 factor is presented with side feedback wave hole 7 in bottom.
It can be seen that the size of the feedback wave hole 7 and 9 and the crucible 2 and 3 are area matched by wave, that is, the feedback wave hole
7 and 9 size can guarantee that microwave emits to the raw material of quartz crucible 3, and not leak into too much other inside furnace body 1
Position.
Wherein, the wave arrestment cover 6 is located between insulating layer 4 and graphite crucible, the location matches with side feedback wave hole,
That is, being located at the upper and lower ends on the inside of side feedback wave hole, the two annular slices partition for being fixed in 1 inner wall of furnace body is formed, for making
It is transmitted in crucible in the horizontal direction substantially via the microwave of feedback wave hole feed-in, that is, putting for microwave is limited by the wave arrestment cover
Firing angle degree.Similarly, the both ends on the inside of bottom feedback wave hole may also set up wave arrestment cover 6.
In addition, although not shown in the drawings, it will be appreciated by those skilled in the art that side feedback wave hole and/or bottom feedback
Wave hole is connected to external microwave heating component.
As an example, external microwave heating component includes waveguide, magnetron, control unit, wherein the waveguide with
The side feedback wave hole and/or bottom feedback wave docking (it is appreciated that centre can be separated with sealing block), the waveguide is used for will be from magnetic control
The microwave transmission that pipe generates is to the feedback wave hole, and later, microwave enters inside furnace body 1, and the control unit is used for magnetron
Carry out vibrational control.Optionally, waveguide pipe end is also connected with transmitting antenna.It is appreciated that in order to make microwave from multiple feedback waves
In hole feed-in single crystal growing furnace, the waveguide can be connected with branch joint, microwave (power) distribution for will generate from magnetron
To multiple feedback wave holes, and it is sent into single crystal growing furnace to be heated to raw material.
Wherein, the side wall of the graphite crucible 2 forms netted wave transparent skeleton, for example, the shell of the graphite crucible 2 has
There is the equally distributed through-hole that diameter is 10 millimeters, spacing is 20 millimeters.
Optionally, in the case where the bottom of the furnace body 1 is disposed with feedback wave hole (bottom feedback wave hole), the bottom of graphite crucible 2
Portion is provided with the through-hole for passing through microwave.
By above-mentioned arrangement, 2450 megahertzs or 915 megahertzs of high-frequency energy wave can be used to provide for external microwave heating component
Thermal energy makes full use of the frequency and wavelength characteristic of both wave energy, can reach direct high-efficiency heating silicon material but also get around medium
Energy-absorbing waste, using such mode it is possible to prevente effectively from the above-mentioned drawback of current technology, reaches the mesh of upgrading synergy cost declining
's.
Due to eliminating the electrod assembly in traditional single crystal growing furnace, there can be more spaces to arrange other portions in furnace body
Part, such as heat preservation component, which increase the flexibility ratios (for example, the thickness that can increase insulating layer (4)) of equipment design, alternatively, also having
Conducive to the size for reducing furnace body.
It is obtained through overtesting：Using the microwave heating component of 2450MHz, power 2000W, by 1 hour
Heating, 0.45 kilogram of raw material can be melted, heating efficiency is much better than resistance-type heating method.
In conclusion the utility model is carried out with to the drawing process for carrying out silicon single crystal with 915 and 2450 megahertzs of high frequency waves
Protection, this utility model can accomplish efficient, Flashmelt according to the characteristic of polycrystal material, provide during crystal growth enough
Big thermal field gradient, the i.e. diameter of thermal field indulge and think gradient；The diameter of melt is indulged and thinks gradient；The diameter of crystal is indulged and thinks gradient, realizes former
Reason is that thermal field component occurs which kind of thermal field gradient relative displacement (needs to obtain, how to ensure in crystal growing process？) to obtain
Maximum growth rate is obtained, production efficiency is improved.
Finally, it will be appreciated by those of skill in the art that various repair can be made to the above embodiments of the present invention
Change, modification and replacement, each fall within the protection scope of the utility model as defined in the appended claims.
Claims (10)
1. a kind of monocrystal stove for carrying out silicon monocrystal growth process control with high frequency waves, it is characterised in that including furnace body (1) and
Crucible (2,3),
Wherein, the crucible (2,3) is located in furnace body (1), for accommodating raw material,
Wherein, the side wall of the furnace body (1) and/or bottom are disposed with feedback wave hole, for being docked with external microwave heating component, with
Raw material in crucible (2,3) is heated.
2. monocrystal stove according to claim 1, which is characterized in that the crucible (2,3) by quartz crucible (3) and
Black-fead crucible (2) composition outside in the quartz crucible (3) is covered,
The bottom of the graphite crucible (2) is connected with crucible axis (10), and the crucible axis (10) is passed through from the bottom of the furnace body (1)
It wears, for moving up and down and rotating the crucible (2,3) during monocrystalline silicon growing.
3. monocrystal stove according to claim 2, which is characterized in that furnace body (1) inner wall is additionally provided with by wave arrestment material
Manufactured insulating layer (4), for maintaining in-furnace temperature.
4. monocrystal stove according to claim 1, which is characterized in that be additionally provided with guide shell 5 above the crucible (2,3).
5. monocrystal stove according to claim 1, which is characterized in that in the contour equidistant cloth of the side wall of the furnace body (1)
Multiple feedback wave holes are equipped with, and/or, multiple feedback wave holes are disposed in the form of circumferential arrangement in the bottom of the furnace body (1).
6. monocrystal stove according to claim 3, which is characterized in that in the contour equidistant cloth of the side wall of the furnace body (1)
Multiple feedback wave holes are equipped with, also, the feedback wave hole runs through institute's insulating layer (4),
Wherein, size and the crucible (2,3) of the feedback wave hole is effective area matched by wave.
7. monocrystal stove according to claim 1, which is characterized in that be equipped in the furnace wall outer surface of the furnace body (1) saturating
Wave sealing block (8), for covering the feedback wave hole, sealing the furnace body (1) and not influencing wave transparent.
8. the monocrystal stove according to claim 5 or 7, which is characterized in that the upper and lower side on the inside of the feedback wave hole is equipped with resistance
Wave cover (6), the rotation angle for microwave.
9. monocrystal stove according to claim 2, which is characterized in that the outer wall of the graphite crucible (2) has for making
The through-hole that microwave passes through.
10. monocrystal stove according to claim 1, which is characterized in that the furnace body (1) is connected to via the feedback wave hole
External microwave heating component,
Wherein, the external microwave heating component includes waveguide, magnetron, control unit, wherein the waveguide with it is described
Present wave hole docking, the microwave transmission that the waveguide is used to generate from magnetron to the feedback wave hole, the control unit in side
For carrying out vibrational control to magnetron.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820399056.2U CN208151519U (en) | 2018-03-23 | 2018-03-23 | The monocrystal stove of silicon monocrystal growth process control is carried out with high frequency waves |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820399056.2U CN208151519U (en) | 2018-03-23 | 2018-03-23 | The monocrystal stove of silicon monocrystal growth process control is carried out with high frequency waves |
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| CN201820399056.2U Active CN208151519U (en) | 2018-03-23 | 2018-03-23 | The monocrystal stove of silicon monocrystal growth process control is carried out with high frequency waves |
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