CN218918879U - Radio frequency power device and electronic equipment - Google Patents
Radio frequency power device and electronic equipment Download PDFInfo
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- CN218918879U CN218918879U CN202223048885.1U CN202223048885U CN218918879U CN 218918879 U CN218918879 U CN 218918879U CN 202223048885 U CN202223048885 U CN 202223048885U CN 218918879 U CN218918879 U CN 218918879U
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The application provides a radio frequency power device and electronic equipment, and relates to the technical field of radio frequency. The radio frequency power device comprises a first transistor, a second transistor, an overlapping surface improving module and a balun structure, wherein the first transistor is connected with the second transistor in parallel, the overlapping surface improving module is respectively and electrically connected with the first transistor, the second transistor and the balun structure, the balun structure is also used for being electrically connected with a load, the overlapping surface improving module comprises a first matching capacitor and a matching inductance, the first matching capacitor is electrically connected with the matching inductance, and the first matching capacitor comprises parasitic capacitance and complementary capacitance of the first transistor and the second transistor; the first transistor and the second transistor are used for transmitting differential signals; the overlapping surface improving module is used for reducing the overlapping surface between the current and voltage waveforms of the differential signals and realizing impedance matching; the balun structure is used for converting the differential signal into a single-ended signal. The power transmission method and the power transmission device have the advantage of improving power transmission efficiency.
Description
Technical Field
The application relates to the technical field of radio frequency, in particular to a radio frequency power device and electronic equipment.
Background
At present, most radio frequency power devices mostly adopt ceramic or plastic package tube shells, and chips are connected to Pin pins of the tube shells through bonding wires. The longer the bonding wire, the larger the equivalent parasitic parameter is, and the larger the power loss on the bonding wire is; and the matching link design is needed to be carried out on a matching circuit outside the packaging device, so that not only is the output insertion loss increased due to the increase of the size of the matching circuit, but also the cost and parasitic parameters of the packaging tube shell are increased, and the performance deterioration price is improved, and the power transmission efficiency is low.
In summary, the prior art has the problems of large insertion loss and low power transmission efficiency of the radio frequency power device.
Disclosure of Invention
The purpose of the application is to provide a radio frequency power device and electronic equipment, so as to solve the problems of large insertion loss and low power transmission efficiency in the prior art.
In order to achieve the above purpose, the technical solution adopted in the embodiment of the present application is as follows:
in one aspect, an embodiment of the present application provides a radio frequency power device, where the radio frequency power device includes a first transistor, a second transistor, an overlap surface improving module, and a balun structure, where the first transistor is connected in parallel with the second transistor, the overlap surface improving module is electrically connected to the first transistor, the second transistor, and the balun structure is further used to be electrically connected to a load, and the overlap surface improving module includes a first matching capacitor and a matching inductance, where the first matching capacitor is electrically connected to the matching inductance, and the first matching capacitor includes parasitic capacitance and complementary capacitance of the first transistor and the second transistor; wherein, the liquid crystal display device comprises a liquid crystal display device,
the first transistor and the second transistor are used for transmitting differential signals;
the overlapping surface improving module is used for reducing the overlapping surface between the current and voltage waveforms of the differential signals and realizing impedance matching;
the balun structure is used for converting the differential signal into a single-ended signal.
Optionally, the radio frequency power device further includes a first LC module and a second LC module, the control ends of the first transistor and the second transistor are electrically connected to one of the first LC modules, and the balun structure is further electrically connected to the second LC module; wherein, the liquid crystal display device comprises a liquid crystal display device,
the first LC module, the second LC module, and the overlap surface improving module are configured to implement impedance matching.
Optionally, the first LC module is a serial LC module, and the second LC module is a parallel LC module.
Optionally, the matching inductor is formed by interconnecting a first bonding wire and a first microstrip line.
Optionally, the matching inductor further includes a first magnetic core, and the first bonding wire and the first microstrip line are interconnected around the outside of the first magnetic core.
Optionally, the duty ratio of the driving signals of the first transistor and the second transistor is 25%.
Optionally, the balun structure includes a first inductor, a second inductor and a third inductor, wherein the first inductor, the second inductor and the third inductor are formed by connecting a second bonding wire with a second microstrip line, one end of the first inductor is connected with the first transistor, one end of the second inductor is connected with the second transistor, the other ends of the first inductor and the second inductor are connected with a power supply, and the third inductor is also electrically connected with the second LC module and a load respectively; wherein, the liquid crystal display device comprises a liquid crystal display device,
the first inductor and the second inductor are coupled with the third inductor.
Optionally, the balun structure further includes a second magnetic core, and the second bonding wire and the second microstrip line encircle the second magnetic core.
Optionally, the supplementary capacitor includes a first supplementary capacitor and a second supplementary capacitor, one end of the first supplementary capacitor is electrically connected with the first transistor, and the other end of the first supplementary capacitor is grounded; one end of the second complementary capacitor is electrically connected with the second transistor, and the other end of the second complementary capacitor is grounded.
On the other hand, the embodiment of the application also provides electronic equipment, which comprises the radio frequency power device.
Compared with the prior art, the application has the following beneficial effects:
the application provides a radio frequency power device and electronic equipment, the radio frequency power device comprises a first transistor, a second transistor, an overlapping surface improving module and a balun structure, wherein the first transistor is connected with the second transistor in parallel, the overlapping surface improving module is respectively and electrically connected with the first transistor, the second transistor and the balun structure, the balun structure is also used for being electrically connected with a load, the overlapping surface improving module comprises a first matching capacitor and a matching inductance, the first matching capacitor is electrically connected with the matching inductance, and the first matching capacitor comprises parasitic capacitance and complementary capacitance of the first transistor and the second transistor; the first transistor and the second transistor are used for transmitting differential signals; the overlapping surface improving module is used for reducing the overlapping surface between the current and voltage waveforms of the differential signals and realizing impedance matching; the balun structure is used for converting the differential signal into a single-ended signal. Because the overlapping surface improving module is arranged in the radio frequency power device, the overlapping surface between the current waveform and the voltage waveform can be reduced, and meanwhile, the power is output through the balun structure, and then the power transmission efficiency can be improved.
In order to make the above objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting in scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic diagram of a first circuit connection of a radio frequency power device according to an embodiment of the present application.
Fig. 2 is a schematic diagram of a second circuit connection of a radio frequency power device according to an embodiment of the present application.
Fig. 3 is an equivalent circuit schematic diagram of a radio frequency power device according to an embodiment of the present application.
Fig. 4 is a schematic diagram of voltage and current waveforms provided in an embodiment of the present application.
Fig. 5 is a schematic diagram of simulation results provided in the embodiment of the present application.
In the figure:
100-radio frequency power devices; 110-a first LC module; 120-a first transistor; 130-a second transistor; 140-an overlap improvement module; 150-balun structure; 160-a second LC module;
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, which are generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. Meanwhile, in the description of the present application, the terms "first", "second", and the like are used only to distinguish the description, and are not to be construed as indicating or implying relative importance.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
In the description of the present application, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
Some embodiments of the present application are described in detail below with reference to the accompanying drawings. The following embodiments and features of the embodiments may be combined with each other without conflict.
As described in the background art, the prior art has the problems of large insertion loss and low power transmission efficiency of the radio frequency power device.
The traditional transmission efficiency improving modes comprise two modes, wherein one mode is to improve the power transmitted to a fundamental wave under the condition that the direct current power consumption is unchanged; another is the sum of the power lost by the device and the second third harmonic power, but the effect of improving the transmission efficiency is limited.
In view of this, the present application provides a radio frequency power device, which realizes the function of improving the power transmission efficiency by providing a new overall circuit architecture of the radio frequency power device.
The following is an exemplary description of a radio frequency power device provided in the present application:
as an implementation manner, referring to fig. 1, the rf power device 100 includes a first transistor 120, a second transistor 130, an overlap surface improving module 140 and a balun structure 150, where the first transistor 120 is connected in parallel with the second transistor 130, the overlap surface improving module 140 is electrically connected to the first transistor 120, the second transistor 130 and the balun structure 150, the balun structure 150 is further used for electrically connecting to a load, the overlap surface improving module 140 includes a first matching capacitor and a matching inductance, the first matching capacitor is electrically connected to the matching inductance, and the first matching capacitor includes parasitic capacitors and complementary capacitors of the first transistor 120 and the second transistor 130; the first transistor 120 and the second transistor 130 are used for transmitting differential signals; the overlap surface improvement module 140 is configured to reduce an overlap surface between current and voltage waveforms of the differential signal and implement impedance matching; the balun structure 150 is used to convert the differential signal to a single-ended signal.
In addition, referring to fig. 2, in order to better implement impedance matching of the rf power device 100, as an implementation manner, the rf power device 100 further includes a first LC module 110 and a second LC module 160, control ends of the first transistor 120 and the second transistor 130 are respectively electrically connected to one first LC module 110, and the balun structure 150 is further electrically connected to the second LC module 160; the first LC module 110, the second LC module 160, and the overlap surface improving module 140 are used to realize impedance matching.
By adopting the internal matching power amplifier design of the differential architecture, the threshold of the breakdown voltage of the transistor is reduced, and meanwhile, by adopting the current push-pull architecture design of the parallel transistors, the influence of the output impedance change on the efficiency of the radio frequency power device 100 is reduced. According to the method, the first LC module 110, the second LC module 160 and the overlapping surface improving module 140 are arranged to realize impedance matching, so that a better impedance matching effect can be realized, and the power transmission efficiency is improved. In addition, the overlapping surface improving module 140 realizes the charge and discharge of the current and the time delay of the signal, thereby improving the overlapping surface between the waveform reduction of the current and the voltage waveform; and differential output is realized through the balun structure 150, waveform shaping is performed on the output through the second LC module 160, and finally, the overlapping area space between voltage and current is reduced, so that the efficiency is improved.
The types of the transistors are not limited in this application, and for example, the first transistor 120 may be a MOS transistor, an IGBT transistor, or the like.
In order to realize a circuit architecture with differential input and single-ended output, in this application, a parallel connection mode is adopted between the first transistor 120 and the second transistor 130, that is, one ends of the first transistor 120 and the second transistor 130 are grounded, and the other ends are electrically connected with the overlap surface improving module 140.
As an implementation manner, the overlap surface improving module 140 includes two, the first transistor 120 and the second transistor 130 are respectively and electrically connected with one overlap surface improving module 140, and the two overlap surface improving modules 140 are respectively and electrically connected with two input ends of the balun structure 150, and an output end of the balun structure 150 is connected with the second LC module 160 and the load, so as to achieve the effects of differential input and single-ended output.
Specifically, referring to fig. 3, the first overlap surface improving module includes a first complementary capacitor C1 and a first matching inductor L1, one end of the first complementary capacitor C1 is electrically connected to the first transistor 120 and the first matching inductor L1, the other end of the first complementary capacitor C1 is grounded, the second overlap surface improving module includes a second complementary capacitor C2 and a second matching inductor L2, one end of the second complementary capacitor C2 is electrically connected to the second transistor 130 and the second matching inductor L2, and the other end of the second complementary capacitor C2 is grounded.
The first complementary capacitor C1 and the parasitic capacitor output by the first transistor 120 together form a first matching capacitor, and the second complementary capacitor C2 and the parasitic capacitor output by the second transistor 130 also together form a first matching capacitor, and are respectively combined with the first matching inductor L1 and the second matching inductor L2 to realize impedance matching. Meanwhile, the overlapping area space between the voltage waveform and the current waveform can be reduced, and the efficiency is further improved. It should be noted that, in the first LC module 110, the second LC module 160, and the overlap surface improving module 140 provided in the present application, the inductance and the capacitance are included, and the balun structure 150 includes a first inductance, a second inductance, and a third inductance, and the overlap surface improving module 140 includes a first matching capacitance and a matching inductance, the second LC module 160 includes a fourth inductance and a second matching capacitance, and the first LC module 110 includes a fifth inductance and a third matching capacitance.
As an implementation manner, the first LC module 110 provided in the present application is a serial LC module, and the second LC module 160 is a parallel LC module, that is, the input end adopts serial LC, and the output end adopts parallel LC. On this basis, the fifth inductor is electrically connected with the control terminal of the first transistor 120 or the second transistor 130 after being connected in series with the third matching capacitor, and is used for receiving a driving signal; the fourth inductor is connected with the output end of the balun structure 150 after being connected with the second matching capacitor in parallel; is used for realizing the functions of impedance matching and filtering.
It should be noted that, in the first matching capacitor described in the present application, the parasitic capacitor and the complementary capacitor include a parasitic capacitor in the first transistor 120 and the second transistor 130, the complementary capacitor refers to an external physical capacitor, and the parasitic capacitor and the complementary capacitor jointly meet the capacitance requirement of the overlap surface improving module 140, that is, the complementary capacitor can be adjusted based on the capacitance of the parasitic capacitor.
Therefore, the circuit architecture realizes the charge and discharge of current and the time delay of signals by connecting two transistors in parallel and utilizing the parasitic capacitance, the complementary capacitance and the matching inductance which are output by the extracted transistors; the magnitude of the complementary capacitors C1 and C2 can influence the current extremum when the transistor is turned on, and the inductance Ls influences the time delay of capacitor discharge, so that the waveform of current is improved, and the overlapping surface between the waveform of voltage and the waveform of current is reduced; the current and voltage waveforms are shown in fig. 4, wherein the fewer the overlapping surfaces of the current waveform and the voltage waveform, the higher the signal output efficiency, and the differential output is realized by the balun structure 150, and the output is waveform shaped by the second LC module 160, so that the overlapping area space between the voltage and the current is reduced, and the efficiency is further improved.
Compared with the prior art, from the circuit architecture, if the circuit architecture of the class D power amplifier is adopted for power transmission, the cut-off frequency of the transistor is required to be very high, and the larger the output power is, the larger the influence of parasitic capacitance of the output on efficiency due to the influence of charge and discharge is; the effect of parasitic capacitance of the transistor should be increased with increasing frequency, limiting the application in higher frequencies. If a class B power amplifier is adopted, harmonic power loss caused by radio frequency nonlinearity needs to be considered, efficiency can be further deteriorated, and transmission power is synchronously deteriorated, so that second harmonic control is needed to improve efficiency improvement; the theoretical maximum efficiency does not exceed 78.5%, and as power transfer increases, a greater leakage voltage is required, which also places a higher requirement on the die withstand voltage threshold.
In the application, the influence of parasitic capacitance and cutoff frequency of the class D power amplifier is considered, the circuit enabling advantage of the class E power amplifier is combined, the differential architecture design is used, and the threshold of breakdown voltage of the transistor is reduced. The efficiency of power transmission reaches more than 90%, the overall efficiency can keep a high-efficiency state, and the radio frequency power device 100 is realized in an internal matching mode, so that the miniaturization of the device can be realized.
As an implementation manner, the matching inductance in the overlap surface improving module 140 is formed by interconnecting the first bonding wire and the first microstrip line, and the balun structure 150 also includes a first inductance, a second inductance, and a third inductance formed by connecting the second bonding wire and the second microstrip line, and at the same time, the fourth inductance in the second LC module 160 is also formed by interconnecting the third bonding wire and the fourth microstrip line.
As shown in fig. 1, when the inductor is formed by combining the bonding wire and the microstrip line, the end points between the bonding wire and the microstrip line are connected in a one-to-one correspondence manner, so as to form the shape of the coil. In the prior art, microstrip lines are arranged in the device, stray inductance exists between the microstrip lines, and power transmission efficiency is affected. In the application, the stray inductance is converted into the matching inductance which is favorable for impedance matching by combining the bonding wire and the microstrip line into the inductance.
Meanwhile, in order to increase the inductance value of the inductor, as an implementation manner, the matching inductor further comprises a first magnetic core, and the first bonding wire and the first microstrip line are connected with each other around the first magnetic core; the balun structure 150 further includes a second magnetic core, and the second bonding wire and the second microstrip line encircle the second magnetic core.
One end of the first inductor in the balun structure 150 is connected to the first transistor 120, one end of the second inductor is connected to the second transistor 130, the other ends of the first inductor and the second inductor are both connected to a power source, the third inductor is further electrically connected to the second LC module 160 and the load, and the first inductor and the second inductor are both coupled to the third inductor.
It should be noted that, in the balun structure 150 implemented by matching the bonding wire with the microstrip line at the input end, the impedance change ratio is determined by inductance, and the input enable signal is output to the two transistors through the balun to implement power amplification switching, and the overlapping area and the spacing of the two coils can be changed by adjusting the relative position of the bonding wire, so as to change the coupling coefficient.
In addition, it should be noted that, in this application, the transistor needs to be regarded as a radio frequency switch, and the transistor is enabled to switch between an on state and an off state by the enable of the input signal, so that the requirement on the cut-off frequency of the transistor is high. Therefore, the first transistor 120 and the second transistor 130 provided in the present application can ensure a higher cut-off frequency and good gain performance at high frequency by selecting GaN transistors. And secondly, outputting by adopting a bonding wire and winding inductance mode, and ensuring the balance with the broadband characteristic as much as possible under the condition of ensuring the Q value.
Simulation is performed based on the circuit architecture provided by the application, and simulation results are shown in a table one:
list one
As shown in table one, the power transmission efficiency of the rf power device 100 provided in the present application is higher, generally higher than 80%, and the power transmission efficiency reaches the highest when the duty ratio of the driving signal is 25%, so that the duty ratio of the driving signal of the first transistor 120 and the second transistor 130 is 25%.
As shown in FIG. 5, the simulation result of the RF power device 100 provided by the application shows that when the output differential impedance is changed from 10ohm to 250ohm, the output efficiency is basically maintained to be above 85%, and the output efficiency is not seriously deteriorated along with the change of the output load.
Based on the above implementation manner, the embodiment of the application further provides an electronic device, which includes the radio frequency power device 100.
In summary, the application provides a radio frequency power device and an electronic device, where the radio frequency power device includes a first transistor, a second transistor, an overlap surface improving module, and a balun structure, the first transistor and the second transistor are connected in parallel, the overlap surface improving module is electrically connected to the first transistor, the second transistor, and the balun structure, the balun structure is further electrically connected to a load, the overlap surface improving module includes a first matching capacitor and a matching inductance, the first matching capacitor is electrically connected to the matching inductance, and the first matching capacitor includes parasitic capacitance and supplementary capacitance of the first transistor and the second transistor; the first transistor and the second transistor are used for transmitting differential signals; the overlapping surface improving module is used for reducing the overlapping surface between the current and voltage waveforms of the differential signals and realizing impedance matching; the balun structure is used for converting the differential signal into a single-ended signal. Because the overlapping surface improving module is arranged in the radio frequency power device, the overlapping surface between the current waveform and the voltage waveform can be reduced, and meanwhile, the power is output through the balun structure, and then the power transmission efficiency can be improved.
The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.
It will be evident to those skilled in the art that the present application is not limited to the details of the foregoing illustrative embodiments, and that the present application may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the application being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Claims (10)
1. The radio frequency power device is characterized by comprising a first transistor, a second transistor, an overlapping surface improving module and a balun structure, wherein the first transistor is connected with the second transistor in parallel, the overlapping surface improving module is respectively and electrically connected with the first transistor, the second transistor and the balun structure, the balun structure is also used for being electrically connected with a load, the overlapping surface improving module comprises a first matching capacitor and a matching inductor, the first matching capacitor is electrically connected with the matching inductor, and the first matching capacitor comprises parasitic capacitors and complementary capacitors of the first transistor and the second transistor; wherein, the liquid crystal display device comprises a liquid crystal display device,
the first transistor and the second transistor are used for transmitting differential signals;
the overlapping surface improving module is used for reducing the overlapping surface between the current and voltage waveforms of the differential signals and realizing impedance matching;
the balun structure is used for converting the differential signal into a single-ended signal.
2. The rf power device of claim 1, further comprising a first LC module and a second LC module, wherein the control terminals of the first transistor and the second transistor are each electrically connected to one of the first LC modules, and wherein the balun structure is further electrically connected to the second LC module; wherein, the liquid crystal display device comprises a liquid crystal display device,
the first LC module, the second LC module, and the overlap surface improving module are configured to implement impedance matching.
3. The radio frequency power device of claim 2, wherein the first LC module is a series LC module and the second LC module is a parallel LC module.
4. The radio frequency power device according to claim 1, wherein the matching inductance is formed by interconnecting a first bonding wire with a first microstrip line.
5. The rf power device of claim 4, wherein the matching inductance further comprises a first magnetic core, the first bond wire and the first microstrip line being interconnected around the outside of the first magnetic core.
6. The radio frequency power device according to claim 1, wherein a duty cycle of a driving signal of the first transistor and the second transistor is 25%.
7. The rf power device of claim 1, wherein the balun structure includes a first inductor, a second inductor, and a third inductor formed by connecting a second bond wire to a second microstrip line, wherein one end of the first inductor is connected to the first transistor, one end of the second inductor is connected to the second transistor, the other ends of the first inductor and the second inductor are both connected to a power supply, and the third inductor is also electrically connected to the load; wherein, the liquid crystal display device comprises a liquid crystal display device,
the first inductor and the second inductor are coupled with the third inductor.
8. The rf power device of claim 7, wherein the balun structure further includes a second magnetic core, the second bond wire and the second microstrip line surrounding the second magnetic core.
9. The rf power device of claim 1, wherein the supplemental capacitors comprise a first supplemental capacitor and a second supplemental capacitor, one end of the first supplemental capacitor being electrically connected to the first transistor and the other end being grounded; one end of the second complementary capacitor is electrically connected with the second transistor, and the other end of the second complementary capacitor is grounded.
10. An electronic device, characterized in that it comprises a radio frequency power device according to any of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202223048885.1U CN218918879U (en) | 2022-11-15 | 2022-11-15 | Radio frequency power device and electronic equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202223048885.1U CN218918879U (en) | 2022-11-15 | 2022-11-15 | Radio frequency power device and electronic equipment |
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| CN218918879U true CN218918879U (en) | 2023-04-25 |
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