CN218847452U - Piezoresistive film pressure sensor, mechanical arm, robot and sports equipment - Google Patents
Piezoresistive film pressure sensor, mechanical arm, robot and sports equipment Download PDFInfo
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- CN218847452U CN218847452U CN202222026598.4U CN202222026598U CN218847452U CN 218847452 U CN218847452 U CN 218847452U CN 202222026598 U CN202222026598 U CN 202222026598U CN 218847452 U CN218847452 U CN 218847452U
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- 239000010408 film Substances 0.000 claims description 83
- 239000012528 membrane Substances 0.000 claims description 12
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- 229920000515 polycarbonate Polymers 0.000 claims description 4
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- 239000004743 Polypropylene Substances 0.000 claims description 3
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Abstract
The utility model relates to a pressure sensor technical field specifically provides a pressure drag film pressure sensor, arm or robot, sport equipment. The piezoresistive film pressure sensor comprises a piezoresistive film layer and an electrode layer, wherein the piezoresistive film layer is provided with at least two pressure sensing areas, and a gap is formed between every two adjacent pressure sensing areas; the piezoresistive film layer comprises a piezoresistive film and a plurality of conductive silk-screen layers stacked on the surface of the piezoresistive film; each pressure sensing area comprises at least two conductive silk-screen layers, and a space is reserved between every two adjacent conductive silk-screen layers in the same pressure sensing area; the electrode layer is laminated on the surface of the piezoresistive film back to the conductive silk-screen layer; the electrode layer comprises a plurality of positive electrode structures and a plurality of negative electrode structures, and each pressure sensing area comprises at least one positive electrode structure and at least one negative electrode structure in an area defined by the orthographic projection of the electrode layer. The piezoresistive film pressure sensor provided by the embodiment has the characteristics of crosstalk prevention, high pressure sensing sensitivity and the like.
Description
[ technical field ] A
The utility model relates to a pressure sensor technical field especially relates to a pressure drag film pressure sensor, arm or robot, sport equipment.
[ background of the invention ]
The piezoresistive thin-film pressure sensor can sense the pressure applied to the surface of the sensor, so that the pressure can be accurately detected. The piezoresistive film pressure sensor with the structure needs two silkscreens to obtain the positive electrode and the negative electrode, and a positive electrode terminal and a negative electrode terminal are respectively led out from two sides of the piezoresistive film, so that the piezoresistive film pressure sensor is difficult to be made into a universal electrode. The second one is that the piezoresistive pressure sensor comprises an electrode substrate, a positive electrode and a negative electrode which are silk-screened on one surface of the electrode substrate, a piezoresistive film and a public conductive silk-screen which is silk-screened on the surface of the piezoresistive film opposite to the electrode substrate, but the piezoresistive film pressure sensor can not be designed into a universal electrode, and when the piezoresistive pressure sensor is used, a crosstalk phenomenon easily occurs, namely when a certain part is pressed, the piezoresistive values of other parts can be influenced.
[ Utility model ] content
An object of the utility model is to provide a pressure drag film pressure sensor to there is crosstalk and can not make the problem of general electrode in solving current pressure drag film pressure sensor.
In order to achieve the above technical objective, the utility model discloses a technical scheme as follows:
a piezoresistive membrane pressure sensor comprising:
a piezoresistive film layer having at least two pressure sensing regions with a space between adjacent pressure sensing regions; the piezoresistive film layer comprises a piezoresistive film and a plurality of conductive silk-screen layers which are stacked on the surface of the piezoresistive film; each pressure sensing area comprises at least two conductive silk-screen layers, and a space is reserved between every two adjacent conductive silk-screen layers in the same pressure sensing area;
the electrode layer is laminated on the surface, back to the conductive silk-screen layer, of the piezoresistive film; the electrode layer comprises a plurality of positive electrode structures and a plurality of negative electrode structures, and each pressure sensing area comprises at least one positive electrode structure and at least one negative electrode structure in an area defined by the orthographic projection of the electrode layer.
In some embodiments, each of the pressure sensing regions is formed by a pair of the positive electrode structure and the negative electrode structure and is spaced from each other in a region surrounded by an orthographic projection of the electrode layer.
In some embodiments, the spacing between the positive electrode structures and the negative electrode structures disposed in pairs is no greater than 50mm.
In some embodiments, the electrode layer further comprises a positive lead and a negative lead, each of the positive leads being electrically connected to at least one of the positive structures; each negative electrode lead is connected with at least one negative electrode structure;
or the electrode layer further comprises a positive electrode lead and a negative electrode lead, all the negative electrode structures share one negative electrode lead, and all the positive electrode structures share one positive electrode lead in an area surrounded by the orthographic projection of each pressure sensing area on the electrode layer.
In some embodiments, the electrode layer further comprises a carrier layer comprising a support portion and a tab portion, the tab portion being connected to the support portion; the positive electrode structure and the negative electrode structure are arranged on the surface of the bearing part, and the positive electrode lead and the negative electrode lead are arranged on the bearing part and respectively extend to the joint part.
In some embodiments, the carrier layer comprises at least one of a polyethylene terephthalate layer, a polycarbonate layer, a polyimide layer;
and/or the thickness of the bearing layer is 0.02 mm-1.5 mm.
In some embodiments, the positive electrode structures and the negative electrode structures arranged in pairs extend in straight trajectories;
or the positive electrode structures and the negative electrode structures arranged in pairs extend along a broken line track;
or the positive electrode structure and the negative electrode structure which are arranged in pairs extend along a curved track;
or, in the positive electrode structure and the negative electrode structure which are arranged in pair, an extended track of the positive electrode structure encloses a closed region in an orthogonal projection of the piezoresistive film layer, and an extended track of the negative electrode structure encloses a closed region in an orthogonal projection of the piezoresistive film layer.
In some embodiments, the piezoresistive film comprises at least one of a polyimide film, a polypropylene film, a polyethylene film, and a polycarbonate film;
and/or the thickness of the piezoresistive film is 0.02 mm-2.0 mm.
Compared with the prior art, in the piezoresistive film pressure sensor provided by the embodiment of the utility model, the electrode layer and the conductive silk-screen layer are respectively arranged on two opposite surfaces of the piezoresistive film, and the piezoresistive film layer is divided into at least two pressure sensing areas, so that the crosstalk phenomenon when the piezoresistive film pressure sensor is pressed can be effectively avoided; and the design of a plurality of positive electrode structures and a plurality of negative electrode structures in the electrode layer can reduce the processing difficulty of the positive electrode structures and the negative electrode structures, and realize leading out the positive electrode and the negative electrode from the same side.
Furthermore, another object of the present invention is to provide a robot arm or a robot, a sports apparatus.
The technical scheme is as follows:
a robot arm or a robot comprising a piezoresistive membrane pressure sensor as described above.
And the sports equipment comprises any one of intelligent boxing gloves and intelligent boxing targets, and comprises the piezoresistive film pressure sensor.
Compared with the prior art, the utility model provides a arm or robot or sport equipment owing to including foretell piezoresistive film pressure sensor, therefore can effectively detect the strength size of outside extrusion or collision to detectivity is high, the phenomenon of crosstalking does not appear.
[ description of the drawings ]
Fig. 1 is a schematic perspective view of a piezoresistive thin film pressure sensor according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an explosion structure of a piezoresistive thin film pressure sensor according to an embodiment of the present invention;
fig. 3 is a schematic top view of a piezoresistive membrane pressure sensor provided by an embodiment of the present invention;
fig. 4 is a schematic view of a current flow direction of a piezoresistive thin-film pressure sensor according to an embodiment of the present invention;
figure 5 is the schematic diagram that the utility model discloses pressure drag film pressure sensor is connected with collection system.
The reference numbers illustrate:
10. a piezoresistive membrane pressure sensor;
11. a piezoresistive film layer; 1101. a first pressure sensitive region; 1102. a second pressure sensitive region; 1103. a third pressure sensitive region; 1104. a fourth pressure sensitive region; 111. a piezoresistive film; 112. a conductive screen printing layer;
12. an electrode layer; 121. a positive electrode structure; 122. a negative electrode structure; 123. a positive electrode lead; 124. a negative electrode lead; 125. a carrier layer; 1251. a bearing part; 1252. a joint portion;
20. and a collecting device.
[ detailed description ] embodiments
The present invention will be further described with reference to the accompanying drawings and embodiments. It is to be understood that the disclosed embodiments are merely exemplary of the invention, and are not intended to limit the invention to the precise embodiments disclosed. Based on the embodiments of the present invention, all other embodiments obtained by a person skilled in the art without making creative efforts belong to the protection scope of the present invention.
It should be noted that all the directional indicators (such as upper, lower, left, right, front, and rear … …) in the embodiments of the present invention are only used to explain the relative position relationship between the components in a specific posture, the motion situation, etc., and if the specific posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit ly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the technical solutions in the embodiments may be combined with each other, but it must be based on the realization of those skilled in the art, and when the technical solutions are contradictory or cannot be realized, the combination of the technical solutions should not be considered to exist, and is not within the protection scope of the present invention.
Fig. 1 to 5 are schematic structural views of a piezoresistive thin film pressure sensor 10 provided in this embodiment.
Referring to fig. 1 and 2, a piezoresistive thin film pressure sensor 10 of the present embodiment includes a piezoresistive film layer 11 and an electrode layer 12. The piezoresistive film layer 11 has at least two pressure-sensitive regions, and a space is provided between two adjacent pressure-sensitive regions; the piezoresistive film layer 11 comprises a piezoresistive film 111 and a plurality of conductive silk-screen layers 112, and the conductive silk-screen layers 112 are respectively stacked on the surface of the piezoresistive film 111; at least two conductive silk-screen layers 112 are silk-printed in each pressure-sensitive area, and a space is reserved between every two adjacent conductive silk-screen layers 112 in the same pressure-sensitive area; the electrode layer 12 is stacked on the surface of the piezoresistive film 111 opposite to the conductive silk-screen layer 112, the electrode layer 12 includes a plurality of positive electrode structures 121 and a plurality of negative electrode structures 122, and each pressure sensing area includes at least one positive electrode structure 121 and at least one negative electrode structure 122 in an area defined by an orthographic projection of the electrode layer 12. In this embodiment, the piezoresistive film layer 11 of the piezoresistive film pressure sensor 10 is formed with at least two pressure sensing regions, and an interval is provided between adjacent pressure sensing regions, each pressure sensing region includes at least one positive electrode structure 121 and at least one negative electrode structure 122 in an area surrounded by the orthographic projection of the electrode layer 12, such a structure can not only effectively avoid crosstalk between adjacent pressure sensing regions, and improve the reliability of pressure sensing, but also reduce the difficulty of silk-screen printing of the positive electrode structures 121 and the negative electrode structures 122, and can also realize leading out the positive electrode and the negative electrode on the same surface of the electrode layer 12, and in addition, can also realize separate processing of the piezoresistive film layer 11 and the electrode layer 12, without considering the structure of the electrode layer 12, it is sufficient to directly cut the piezoresistive film layer 11 into a shape matched with the electrode layer 12, and overlap the piezoresistive film layer 12.
Referring to fig. 1 and 5, in some embodiments, the piezoresistive film 111 includes at least one of a polyimide film, a polypropylene film, a polyethylene film, and a polycarbonate film, which have good flexibility and certain elasticity, and can sense pressure and deform. In some embodiments, the thickness of the piezoresistive film 111 is 0.02mm to 2.0mm, and when the thickness is less than 0.02mm, the printed conductive screen printing layer 112 is difficult to form, and when the thickness is greater than 2.0mm, the flexibility is poor, and the sensitivity of the piezoresistive film pressure sensor 10 is reduced because the small pressure is not easy to sense. In some embodiments, the conductive screen printing layer 112 may be any one of a carbon layer, a silver layer, and a copper layer.
Referring to fig. 2, 3 and 4, in some embodiments, the electrode layer 12 further includes a positive electrode lead 123 and a negative electrode lead 124, each positive electrode lead 123 is electrically connected to at least one positive electrode structure 121, and each negative electrode lead 124 is connected to at least one negative electrode structure 122, so that after applying a pressure to the pressure sensing area, a conductive loop of the positive electrode lead 123, the positive electrode structure 121, the piezoresistive film 111, the conductive screen printing layer 112, the piezoresistive film 111, the negative electrode structure 122, and the negative electrode lead 124 is formed, and after connecting the positive electrode lead 123 and the negative electrode lead 124 forming the conductive loop to the collecting device 20 for collecting pressure sensing data, the magnitude of a current in the conductive loop can be obtained, and the magnitude of the pressure applied to the pressure sensing area can be obtained according to the magnitude of the current.
Referring to fig. 2 and 3, in some embodiments, each of the pressure sensing regions is formed by a pair of positive electrode structures 121 and a pair of negative electrode structures 122 spaced apart from each other in an area defined by an orthographic projection of the electrode layer 12. The positive electrode structures 121 and the negative electrode structures 122 are pairwise arranged in the same area, so that the positive electrode structures 121 and the negative electrode structures 122 arranged in pairs can cover more areas as far as possible, and the pressure sensitivity is improved. In some embodiments, the distance between the positive electrode structures 121 and the negative electrode structures 122 arranged in pairs is not greater than 50mm, so that the pressure applied to any part in each pressure-sensitive area can be effectively sensed.
Referring to fig. 2, in some embodiments, the positive electrode structures 121 disposed in pairs extend along a linear track, and the negative electrode structures 122 also extend along a linear track, so that the positive electrode structures 121 and the negative electrode structures 122 disposed in pairs are parallel to each other and have a certain offset therebetween, the positive electrode lead 123 is connected to the positive electrode structure 121 at an end of the positive electrode structure 121 away from the negative electrode structure 122, and the negative electrode lead 124 is connected to the negative electrode structure 122 at an end of the negative electrode structure 122 away from the positive electrode structure 121. In some embodiments, all the negative electrode structures 122 share one negative electrode lead 124, and all the positive electrode structures 121 in each pressure sensing region share one positive electrode lead 123, so that the negative electrode lead 124 is disposed between the orthographic projections of the two adjacent pressure sensing regions on the electrode layer 12, and the positive electrode lead 123 is disposed at the other end of the orthographic projection formed on the electrode layer 12 by each pressure sensing region relative to the negative electrode lead 124, which can effectively reduce the number of the positive electrode leads 123 and the negative electrode leads 124, and reduce the complexity of routing the electrode layer 12. In some embodiments, the positive electrode structure 121 and the positive electrode lead 123 are integrally formed, the negative electrode structure 122 and the negative electrode lead 124 are integrally formed, and the positive electrode structure 121, the negative electrode structure 122, the positive electrode lead 123 and the negative electrode lead 124 are coplanar, so as to improve the flatness and the pressure sensitivity of the piezoresistive thin film pressure sensor 10. In some embodiments, the positive electrode structures 121 and the negative electrode structures 122 arranged in pairs do not necessarily extend along a straight track, but may also extend along a broken-line track or along a curved track, or the extending track of the positive electrode structure 121 encloses a closed region in the orthographic projection of the piezoresistive film layer 11, and the extending track of the negative electrode structure 122 also forms a closed region in the orthographic projection of the piezoresistive film layer 11. In some embodiments, the positive electrode structure 121, the negative electrode structure 122, the positive electrode lead 123 and the negative electrode lead 124 may be any conductive material such as a carbon layer, a silver layer, a copper layer, etc.
Referring to fig. 1, fig. 2 and fig. 5, in some embodiments, the electrode layer 12 further includes a carrier layer 125, the carrier layer 125 is used for supporting the positive electrode structure 121, the negative electrode structure 122, the positive electrode lead 123 and the negative electrode lead 124, in some embodiments, the positive electrode structure 121, the negative electrode structure 122, the positive electrode lead 123 and the negative electrode lead 124 are silk-screened on the surface of the carrier layer 125 by a silk-screen method, and the positive electrode structure 121, the negative electrode structure 122, the positive electrode lead 123 and the negative electrode lead 124 are directly attached to the piezoresistive film 111. Of course, the carrier layer 125 may also have a groove, and the positive electrode structure 121, the negative electrode structure 122, the positive electrode lead 123 and the negative electrode lead 124 are partially embedded in the groove, and the positive electrode structure 121, the negative electrode structure 122, the positive electrode lead 123 and the negative electrode lead 124 are directly attached to the piezoresistive film 111. In some embodiments, the carrier layer 125 includes a supporting portion 1251 and a joint portion 1252, the joint portion 1252 is connected to the supporting portion 1251, the positive electrode structure 121 and the negative electrode structure 122 are both disposed on the surface of the supporting portion 1251, and the positive electrode lead 123 and the negative electrode lead 124 are disposed on the supporting portion 1251 and respectively extend to the joint portion 1252, so that the electrode layer 12 can be electrically connected to the collecting device 20 for collecting pressure-sensitive data from the joint portion 1252.
Referring to fig. 2, in some embodiments, the carrier layer 125 includes at least one of a polyethylene terephthalate layer, a polycarbonate layer, and a polyimide layer, and the carrier layer 125 is made of a material having a certain flexibility, so that the positive electrode structure 121, the negative electrode structure 122, the positive electrode lead 123, and the negative electrode lead 124 are conveniently screen-printed on the carrier layer 125. In some embodiments, the thickness of the carrier layer 125 is 0.02mm to 1.5mm, and when the thickness of the carrier layer 125 is less than 0.02mm, the screen printing is not easy to form, and when the thickness is greater than 1.5mm, the flexibility is poor, which is not favorable for the mounting of the electrode layer 12 and the piezoresistive film layer 11 to form the piezoresistive film pressure sensor 10.
The piezoresistive film pressure sensor 10 provided by the embodiment can effectively solve the crosstalk problem of the existing piezoresistive film pressure sensor 10, and has high sensitivity, so that the piezoresistive film pressure sensor can be used as a pressed part of a mechanical arm or a robot; or as a pressed part of electronic products such as electronic drums, musical instrument pedals and the like to sense external pressure. In addition, can also regard as the sport equipment, for example as the atress part of intelligence boxing gloves, intelligent boxing target etc to can effectively respond to external pressure. The anti-collision device can also be arranged at an anti-collision part of an anti-collision wall to sense the collision force.
Examples
Referring to fig. 3 and fig. 1 to 2 and 5, a piezoresistive film pressure sensor 10 includes a piezoresistive film layer 11 and an electrode layer 12 stacked in sequence, wherein the piezoresistive film layer 11 includes a piezoresistive film 111 and nine conductive silk-screen layers 112 stacked on the surface of the piezoresistive film 111, the conductive silk-screen layers 112 are silk-screen printed on the surface of the piezoresistive film 111 along a direction perpendicular to the thickness direction of the piezoresistive film 111, the electrode layer 12 is stacked on the surface of the piezoresistive film 111 opposite to the conductive silk-screen layers 112, the electrode layer 12 includes a carrier layer 125, and a negative lead 124, a plurality of positive leads 123, a plurality of positive structures 121, and a plurality of negative structures 122 stacked on the surface of the carrier layer 125, and the negative lead 124, the positive lead 123, the positive structures 121, and the negative structures 122 face the piezoresistive film 111 and are bonded to the piezoresistive film 111. In the piezoresistive film pressure sensor 10 of this embodiment, the piezoresistive film layer 11 has four pressure sensing regions of 2 × 2, that is, the piezoresistive film layer includes a first pressure sensing region 1101, a second pressure sensing region 1102, a third pressure sensing region 1103 and a fourth pressure sensing region 1104, the first pressure sensing region 1101, the second pressure sensing region 1102, the third pressure sensing region 1103 and the fourth pressure sensing region 1104 are arranged in two rows and two columns, each pressure sensing region is provided with sixteen conductive screen printing layers 112 of 4 × 4, a space is provided between adjacent conductive screen printing layers 112 in the same pressure sensing region, each pressure sensing region is in a region surrounded by an orthogonal projection of the electrode layer 12, seven pairs of positive electrode structures 121 and negative electrode structures 122 are arranged in pairs, all negative electrode structures 122 share one negative electrode lead 124, and each pressure sensing region shares one negative electrode lead 124 in the positive electrode structure 121 of the region surrounded by the orthogonal projection of the electrode layer 12; the spacing between the positive electrode structures 121 and the negative electrode structures 122 arranged in pairs is 50mm.
The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope of the present invention, and these modifications or replacements should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (11)
1. A piezoresistive membrane pressure sensor, comprising:
a piezoresistive film layer having at least two pressure sensing regions with a space between adjacent pressure sensing regions; the piezoresistive film layer comprises a piezoresistive film and a plurality of conductive silk-screen layers which are stacked on the surface of the piezoresistive film; each pressure sensing area comprises at least two conductive silk-screen layers, and a space is reserved between every two adjacent conductive silk-screen layers in the same pressure sensing area;
the electrode layer is laminated on the surface, back to the conductive silk-screen layer, of the piezoresistive film; the electrode layer comprises a plurality of positive electrode structures and a plurality of negative electrode structures, and each pressure sensing area comprises at least one positive electrode structure and at least one negative electrode structure in an area defined by the orthographic projection of the electrode layer.
2. The piezoresistive film pressure sensor as claimed in claim 1, wherein each of said pressure sensing regions is paired with and spaced from said positive electrode structure and said negative electrode structure in an area defined by an orthographic projection of said electrode layer.
3. The piezoresistive thin film pressure sensor of claim 2, wherein the spacing between said positive electrode structures and said negative electrode structures arranged in pairs is no greater than 50mm.
4. The piezoresistive thin film pressure sensor according to any of claims 1 to 3, wherein said electrode layer further comprises a positive lead and a negative lead, each of said positive leads being electrically connected to at least one of said positive structures; each negative electrode lead is connected with at least one negative electrode structure;
or the electrode layer further comprises a positive electrode lead and a negative electrode lead, all the negative electrode structures share one negative electrode lead, and all the positive electrode structures share one positive electrode lead in an area surrounded by the orthographic projection of each pressure sensing area on the electrode layer.
5. The piezoresistive film pressure sensor of claim 4, wherein said electrode layer further comprises a carrier layer, said carrier layer comprising a bearing portion and a tab portion, said tab portion being connected to said bearing portion; the positive electrode structure and the negative electrode structure are arranged on the surface of the bearing part, and the positive electrode lead and the negative electrode lead are arranged on the bearing part and respectively extend to the joint part.
6. The piezoresistive film pressure sensor of claim 5, wherein said carrier layer comprises at least one of a polyethylene terephthalate layer, a polycarbonate layer, a polyimide layer;
and/or the thickness of the bearing layer is 0.02 mm-1.5 mm.
7. Piezoresistive thin film pressure sensor according to any of the claims 1-3, characterized in that the positive electrode structures and the negative electrode structures arranged in pairs extend in straight tracks;
or the positive electrode structures and the negative electrode structures arranged in pairs extend along a broken line track;
or the positive electrode structures and the negative electrode structures arranged in pairs extend along curved tracks;
or in the anode structure and the cathode structure which are arranged in pair, an extension track of the anode structure encloses a closed region in the orthographic projection of the piezoresistive film layer, and an extension track of the cathode structure encloses a closed region in the orthographic projection of the piezoresistive film layer.
8. The piezoresistive membrane pressure sensor according to any of claims 1-3, wherein said piezoresistive membrane comprises at least one of a polyimide membrane, a polypropylene membrane, a polyethylene membrane, and a polycarbonate membrane;
and/or the thickness of the piezoresistive film is 0.02 mm-2.0 mm.
9. A robotic arm, characterized in that it comprises a piezoresistive membrane pressure sensor according to any of claims 1 to 8.
10. A robot, characterized in that it comprises a piezoresistive film pressure sensor according to any of claims 1-8.
11. An athletic device comprising any one of an intelligent boxing glove and an intelligent boxing target, the athletic device comprising the piezoresistive film pressure sensors defined in any one of claims 1 to 8.
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| CN202222026598.4U CN218847452U (en) | 2022-08-02 | 2022-08-02 | Piezoresistive film pressure sensor, mechanical arm, robot and sports equipment |
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| CN202222026598.4U CN218847452U (en) | 2022-08-02 | 2022-08-02 | Piezoresistive film pressure sensor, mechanical arm, robot and sports equipment |
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| CN218847452U true CN218847452U (en) | 2023-04-11 |
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