CN218829618U - High-power PIN tube radio frequency switch driving power supply - Google Patents
High-power PIN tube radio frequency switch driving power supply Download PDFInfo
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- CN218829618U CN218829618U CN202223137086.1U CN202223137086U CN218829618U CN 218829618 U CN218829618 U CN 218829618U CN 202223137086 U CN202223137086 U CN 202223137086U CN 218829618 U CN218829618 U CN 218829618U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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Abstract
A high-power PIN tube radio frequency switch driving power supply adopts an SGM41283XTQ16G power supply conversion chip as a boosting chip, PINs VIN and EN are connected with a +5V power supply to control the switch of the boosting chip, PINs SW _1 and SW _2 are connected with one pole of a capacitor C1 to charge the C1, the other pole of the C1 is connected with the anode of a diode D2 and the cathode of the D1, the cathode of the D2 is grounded, the anode of the D1 is connected with one pole of the capacitor C2 and one end of an inductor L1, the other pole of the C2 is grounded, the C2 is charged while discharging, polarity conversion is realized, the other end of the L1 is used as the output end of a power circuit, the C2 discharges through the L1 to convert a 5V power supply into a 65V output voltage, the +5V power supply is converted into-65V power supply with lower cost, and the switching between the +5V power supply and the-65V power supply is rapidly switched.
Description
Technical Field
The invention belongs to the technical field of electronic circuits, and particularly relates to a driving power supply technology.
Background
In recent years, with the rapid development of radar systems, radio frequency switches with channel switching functions are widely applied to antenna transmit-receive polarization. With the continuous development of scientific technology, a driving circuit of a low-power PIN radio-frequency switch can be realized.
In the existing engineering design, the driving circuit design of the high-power PIN transistor radio frequency switch generally adopts a mode of combining a resistor and an NPN triode. Considering the influence of stray capacitance and inductance of discrete components, the traditional driving circuit cannot realize the rapid switching between PIN tube radio frequency switch channels, and a high-voltage negative power supply required by driving a high-power PIN tube radio frequency switch is difficult to realize.
The existing drive circuit of the high-power PIN tube radio frequency switch has the technical problems of how to generate high negative voltage and low level conversion speed, and the research on the drive power supply of the high-power PIN tube radio frequency switch has important theoretical and engineering significance.
Disclosure of Invention
The invention provides a high-power PIN tube radio frequency switch driving power supply for solving the problems in the prior art, and adopts the following technical scheme for achieving the purpose.
The method comprises the following steps: an SGM41283XTQ16G power conversion chip is adopted as a boosting chip, a pin VIN and a pin EN are connected with a +5V power supply, a switch of the boosting chip is controlled, a pin SW _1 and a pin SW _2 are connected with one pole of a capacitor C1, the capacitor C1 is charged, the other pole of the capacitor C1 is connected with the anode of a diode D2 and the cathode of the diode D1, the cathode of the diode D2 is grounded, the anode of the diode D1 is connected with one pole of the capacitor C2 and one end of an inductor L1, the other pole of the capacitor C2 is grounded, the capacitor C2 is charged while discharging the capacitor C1, polarity conversion is realized, the other end of the inductor L1 is used as an output end of a power circuit, the capacitor C2 discharges through the inductor L1, and the 5V power supply is converted into 65V output voltage.
Further comprising: the positive pole of a diode D3 is connected with one ends of a pin SW _1, a pin SW _2 and an inductor L2, the other end of the inductor L2 is connected with a pin VIN, the negative pole of the diode D3 is connected with a pin MONIN of a boost chip and one pole of a capacitor C5, a +5V power supply charges the capacitor C5 through the inductor L2 and the diode D3, and the other pole of the capacitor C5 is grounded.
Further comprising: the pin FB of the boost chip is connected with a resistor R3, one end of a resistor R4 and one pole of a capacitor C6, the other end of the resistor R3 is connected with the negative pole of a diode D3, the other end of the resistor R4 is grounded, when each oscillation cycle begins, an RS latch of the boost chip SGM41283XTQ16G turns on a power switch, the negative pole voltage of the diode D3 is divided by the resistor R3 and the resistor R4, the voltage Vfb of the pin FB of the boost chip is adjusted to be close to an internal reference voltage 795mV, a small error is amplified by a functional amplifier error amplifier, the voltage is input into a PWM comparator, the positive input end of the PWM comparator is connected with an oscillator, the oscillator outputs triangular waves to modulate pulse width, when the negative pole voltage of the diode D3 is reduced, the divided voltage Vfb is also reduced to enable the output of the functional amplifier error amplifier to be increased, when the positive pole exceeds the negative input voltage of the PWM comparator, the RS latch turns off the power switch, the output pulse width is increased to cause more current to flow through the internal MOSFET, the pin SW 2 is connected with the negative pole of the resistor R3, and the other end of the SW 2 is connected with the other diode SW 2.
Further comprising: a pin RLIM of the boost chip is grounded through a resistor R5, and a pin EP, a pin AGND, a pin PGND _1 and a pin PGND _2 are grounded; the output end is grounded through a parallel capacitor C3 and a capacitor C4, and the pin EN is grounded through a capacitor C7.
The invention has the beneficial effects that: the +5V power supply is converted into a-65V power supply with lower cost, and the switching between the +5V power supply and the-65V power supply is rapid.
Drawings
Fig. 1 shows a power supply circuit, fig. 2 shows a drive circuit, and fig. 3 shows input/output waveforms.
Detailed description of the preferred embodiments
The technical scheme of the invention is specifically explained in the following by combining the attached drawings.
The power supply circuit can be further divided into a boost circuit and a negative voltage circuit, as shown in fig. 1, in the boost circuit, a +5V power supply voltage is input from an input terminal VIN pin and an enable terminal EN pin of the SGM41283XTQ16G, when the EN pin inputs a high voltage, the SGM41283XTQ16G works, a MOSFET tube inside the chip is turned on, the voltage input from the VIN pin passes through an inductor L2 to charge a capacitor C5, the capacitor stores the input voltage, when the EN pin inputs a low voltage, the SGM41283XTQ16G does not work, when the MOSFET tube is turned off, the inductor L2 continues to charge the capacitor C5, the capacitor C5 obtains a higher voltage, and a diode D3 regulates the period of the MOSFET inside the chip, so as to adjust the magnitudes of the on-off and on output currents and voltages of the SW _1 and the SW _ 2.
In the negative voltage circuit, when the output ends SW _1 and SW _2 of the U1 are opened, the capacitor C1 and the diode D2 form a loop, the SGM41283XTQ16G outputs +65V voltage through the resistor R1 with smaller resistance to charge the capacitor C1, at the moment, D2 is conducted, D1 is cut off, and C1 is charged to +65V, when SW _1 and SW _2 are closed, the diode D1 and the capacitor C2 form a loop, at the moment, D1 is conducted, D2 is cut off, C1 slowly discharges C2, the accumulated charges of C1 are charged to C2, negative voltage rectification is formed, and negative voltage rectification is completed, so that the conversion of voltage polarity is formed.
The circuit is connected with a common driving circuit, as shown in fig. 2, an emitting electrode of an NPN type triode Q2 and an emitting electrode of a PNP type triode Q3 are connected with a detection channel B of a dual-channel oscilloscope XSC1 through a resistor R10, a resistor R7 is connected between the emitting electrode and a base electrode of the PNP type triode Q1, a resistor R12 is connected between the emitting electrode and the base electrode of the NPN type triode Q4, the emitting electrode of Q1 is connected with +5V, a collector electrode of Q2 is connected with +5V through a resistor R6, the emitting electrode of Q4 and a collector electrode of Q3 are connected with an output end of a power supply circuit, a resistor R11 is connected between the collector electrode and the base electrode of Q3, the collector electrodes of Q1 and Q4 are connected with base electrodes of Q2 and Q3, and the base electrode of Q1 is connected with a detection channel A of the XSC1 through a resistor R9.
The capacitor C9 is connected with two ends of the resistor R9 in parallel, the base electrode of the Q4 is connected with the end A of the XSC1 through the capacitor C10, the end B of the XSC1 is grounded through the capacitor C8, the end A of the XSC1 is connected with a signal source through the resistor R8, the end B of the XSC1 is connected with the anode of the analog PIN tube through the inductor L3, and the cathode of the PIN tube is grounded.
It can be seen from the dual trace oscilloscope that when the input is +5V, the synchronous output is-65V, and the voltage boosting and the rapid polarity conversion are realized.
The present invention is not limited to the above embodiments, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are included in the protection scope of the present invention.
Claims (5)
1. A high-power PIN pipe radio frequency switch driving power supply is characterized by comprising: an SGM41283XTQ16G power conversion chip is adopted as a boosting chip, a pin VIN and a pin EN are connected with a +5V power supply, a switch of the boosting chip is controlled, a pin SW _1 and a pin SW _2 are connected with one pole of a capacitor C1, the capacitor C1 is charged, the other pole of the capacitor C1 is connected with the anode of a diode D2 and the cathode of the diode D1, the cathode of the diode D2 is grounded, the anode of the diode D1 is connected with one pole of the capacitor C2 and one end of an inductor L1, the other pole of the capacitor C2 is grounded, the capacitor C2 is charged while discharging the capacitor C1, polarity conversion is realized, the other end of the inductor L1 is used as an output end of a power circuit, the capacitor C2 discharges through the inductor L1, and the 5V power supply is converted into 65V output voltage.
2. The high power PIN radio frequency switch drive power supply of claim 1, further comprising: the positive pole of a diode D3 is connected with one end of a pin SW _1, a pin SW _2 and one end of an inductor L2, the other end of the inductor L2 is connected with a pin VIN, the negative pole of the diode D3 is connected with a pin MONIN of a boost chip and one pole of a capacitor C5, a +5V power supply charges the capacitor C5 through the inductor L2 and the diode D3, and the other pole of the capacitor C5 is grounded.
3. The high power PIN tube radio frequency switch drive power supply of claim 1, further comprising: the other end of the resistor R3 is connected with the cathode of the diode D3, the other end of the resistor R4 is grounded, the cathode voltage of the diode D3 is divided by the resistor R3 and the resistor R4, the voltage Vfb of the pin FB of the boost chip is adjusted, the pulse width of the chip is modulated, when the cathode voltage of the diode D3 is reduced, the output of the pin SW _1 and the pin SW _2 is increased, the other end of the capacitor C6 is connected with the resistor R2, and the other end of the resistor R2 is connected with the cathode of the diode D3.
4. The high power PIN radio frequency switch drive power supply of claim 1, further comprising: pin RLIM of the boost chip is grounded via resistor R5, pin EP, pin AGND, pin PGND _1, and pin PGND _2 are grounded, and pin EN is grounded via capacitor C7.
5. The high power PIN radio frequency switch drive power supply of claim 1, further comprising: the output end is grounded through a parallel capacitor C3 and a capacitor C4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223137086.1U CN218829618U (en) | 2022-11-25 | 2022-11-25 | High-power PIN tube radio frequency switch driving power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202223137086.1U CN218829618U (en) | 2022-11-25 | 2022-11-25 | High-power PIN tube radio frequency switch driving power supply |
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| Publication Number | Publication Date |
|---|---|
| CN218829618U true CN218829618U (en) | 2023-04-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202223137086.1U Active CN218829618U (en) | 2022-11-25 | 2022-11-25 | High-power PIN tube radio frequency switch driving power supply |
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| CN (1) | CN218829618U (en) |
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- 2022-11-25 CN CN202223137086.1U patent/CN218829618U/en active Active
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