CN218666387U - Evacuation pipeline and single crystal furnace structure with same - Google Patents
Evacuation pipeline and single crystal furnace structure with same Download PDFInfo
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- CN218666387U CN218666387U CN202123269989.0U CN202123269989U CN218666387U CN 218666387 U CN218666387 U CN 218666387U CN 202123269989 U CN202123269989 U CN 202123269989U CN 218666387 U CN218666387 U CN 218666387U
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The utility model relates to a pipeline ash removal field especially relates to a manage to find time pipeline and have this single crystal growing furnace structure of managing to find time pipeline, and its technical scheme main points are: the evacuation pipeline comprises a pipeline body, and an air inlet communicated with the interior of the pipeline body is formed in the pipeline body; the aim of reducing the adhesion and accumulation of SiO on the inner pipe wall of the evacuated tube is achieved.
Description
Technical Field
The application relates to the field of pipeline ash removal, in particular to an evacuation pipeline and a single crystal furnace structure with the evacuation pipeline.
Background
The monocrystalline silicon wafer is used as a basic material for photovoltaic power generation, and has wide market demand; the Czochralski single crystal silicon growth process is a common single crystal growth process, and is often carried out in a single crystal furnace.
A single crystal furnace described in the related art, in which an evacuation pipe for evacuating the single crystal furnace is often connected to a bottom thereof; in the process of monocrystalline silicon production, a quartz crucible generates a large amount of SiO (silicon vapor) with a silicon solution at high temperature, the SiO is condensed in an evacuation pipeline and adsorbed on the inner pipe wall, and the accumulation of a large amount of SiO can increase the air flow stroke, so that the air pressure in the furnace fluctuates, and the quality of monocrystalline silicon is undoubtedly influenced; in addition, the accumulation of adhering large amounts of SiO can lead to explosion or uncontrolled spontaneous combustion in the immediate contact with air during the ash removal process of the evacuated tube.
SUMMERY OF THE UTILITY MODEL
In order to reduce the adhesion accumulation of SiO on the inner tube wall of the evacuation tube, the present application provides an evacuation tube and a single crystal furnace structure having the evacuation tube.
The application provides an evacuation pipeline adopts following technical scheme:
a vacuum pipeline comprises a pipeline body for vacuumizing a single crystal furnace, wherein an air inlet communicated with the inside of the pipeline body is formed in the pipeline body.
By adopting the technical scheme, the pipeline body is arranged on the single crystal furnace and is communicated with the interior of the single crystal furnace, the other end of the pipeline body is provided with a vacuum pump for vacuumizing the single crystal furnace, and the air inlet is used for communicating an air source for conveying oxygen-containing air flow to the interior of the pipeline body; the single crystal furnace heats the inside of the pipeline body, after silicon steam in the single crystal furnace enters the inside of the pipeline body, siO and oxygen entering through the air inlet react under the action of heat emitted by the single crystal furnace, and SiO is oxidized to form SiO which is not easy to hang on the wall 2 And under the action of the oxygen-containing airflow, dust and generated SiO in the pipeline body 2 Blow to the end of giving vent to anger of pipeline body, the impurity that the inside of pipeline body that has significantly reduced containedSo that the air pressure in the furnace is more stable, and the quality of the monocrystalline silicon is improved.
Optionally, a water-cooling sleeve is sleeved on the pipeline body, a water-cooling interlayer pipe is arranged between the water-cooling sleeve and the pipeline body, and two ends of the water-cooling interlayer pipe extend to the outside of the water-cooling sleeve.
Through adopting above-mentioned technical scheme, play the cooling effect to the pipeline body, prevent to find time the life of component on the pipeline because pipeline body high temperature influences.
Optionally, the pipeline body is provided with an ash removal pipe communicated with the interior of the pipeline body, and the ash removal pipe is detachably connected with a blind plug used for sealing the ash removal pipe.
By adopting the technical scheme, the ash in the pipeline body is convenient to clean; in addition, the inner space of the ash removal pipe can be used for arranging a temperature sensor so as to control the inner temperature of the pipeline body.
Optionally, the explosion-proof pipeline further comprises a main pipeline communicated with the pipeline body, and one or more explosion-proof covers are arranged on the main pipeline and the pipeline body.
By adopting the technical scheme, when the air pressure in the evacuation pipeline is overlarge, the explosion-proof cover is opened to play an overpressure protection role on the evacuation pipeline; in addition, the explosion-proof cover is opened so that the working personnel can conveniently carry out ash cleaning treatment on the interior of the evacuation pipeline.
Optionally, a pressure gauge is arranged on the main pipeline or the pipeline body.
By adopting the technical scheme, the negative pressure condition manufactured in the evacuation pipeline is convenient to monitor, so that the effectiveness of the vacuum pump and the evacuation pipeline on the vacuum pumping action of the single crystal furnace is ensured.
Optionally, the main pipeline is communicated with one or more sections of corrugated pipes.
By adopting the technical scheme, the main pipeline is convenient to be communicated with the vacuum pumps at different positions, the rigid connection between the pipelines is effectively avoided, and the shock absorption or impact resistance of the whole system is improved.
The single crystal furnace structure with the evacuation pipeline adopts the following technical scheme:
a single crystal furnace structure with the evacuation pipeline comprises a furnace body communicated with a pipeline body.
By adopting the technical scheme, the air inlet is used for communicating an air source for conveying oxygen-containing airflow to the interior of the pipeline body; the furnace body makes the pipeline body inside heat up, and after silicon steam in the furnace body enters the pipeline body, siO and oxygen entering through the air inlet react under the effect that the furnace body gives off heat, and SiO is oxidized to form SiO that is difficult for the wall built-up 2 And under the action of the oxygen-containing airflow, dust and generated SiO in the pipeline body 2 Blow to the end of giving vent to anger of pipeline body, the impurity that the pipeline body inside contained that has significantly reduced for atmospheric pressure is more stable in the stove, is favorable to improving the quality of monocrystalline silicon.
Optionally, the air inlet is located at one end of the pipeline body close to the furnace body.
By adopting the technical scheme, the high temperature generated by the furnace body is better utilized, so that the oxidation of SiO is more sufficient, the SiO can be timely oxidized in the moment of discharge, and the adhesion and accumulation of the SiO in the pipeline body are further reduced.
Optionally, the water-cooling sleeve is arranged close to the furnace body.
The temperature of the pipeline body close to the furnace body is highest, and by adopting the technical scheme, more heat absorbed by the pipeline body can be brought away more and more timely.
Optionally, the air inlet end of the pipeline body is connected with the furnace body, the air inlet end of the pipeline body is located above the air outlet end, and the pipeline body is obliquely arranged from top to bottom.
By adopting the technical scheme, dust and generated SiO 2 Can be spontaneous along the pipeline body of slope to giving vent to anger the end and fall or roll, further reduced the attached accumulation of impurity on the pipeline body inner wall.
In summary, the present application has the following technical effects:
1. by arranging the pipeline body and the air inlet, after silicon steam in the single crystal furnace enters the pipeline body, siO and oxygen entering through the air inlet emit heat in the single crystal furnaceThe reaction is carried out under the action of the catalyst, siO is oxidized to form SiO which is not easy to hang on the wall 2 The adhesion and accumulation of SiO on the inner pipe wall of the evacuated pipe are reduced;
2. the water-cooling sleeve and the water-cooling interlayer pipe are arranged, so that the effect of cooling the pipeline body is achieved, and the service life of elements on the evacuation pipeline is prevented from being influenced due to overhigh temperature of the pipeline body;
3. by arranging the explosion-proof cover, when the air pressure in the evacuation pipeline is overlarge, the explosion-proof cover is opened to play an overpressure protection role on the evacuation pipeline; in addition, the explosion-proof cover is opened so that the working personnel can conveniently carry out ash cleaning treatment on the interior of the evacuation pipeline.
Drawings
FIG. 1 is a schematic view showing the overall structure of a single crystal furnace in an embodiment of the present application;
fig. 2 is a schematic view of the overall structure of the evacuation piping in the embodiment of the present application.
In the figure, 1, a pipe body; 2. an air inlet; 3. water-cooling the sleeve; 4. water-cooling the interlayer pipe; 41. a water inlet; 42. a water outlet; 51. a dust removal pipe; 52. blind plugging; 6. a main pipeline; 71. an explosion-proof pipe; 72. an explosion-proof cover; 8. a pressure gauge; 9. a bellows; 10. a furnace body; 11. a ball valve.
Detailed Description
In the description of the present application, it should be noted that the terms "inlet end", "outlet end", "top-down", "vertical", etc. are based on the relative relationships shown in the drawings and are only used for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the process or module referred to must have a particular orientation, state and operation and therefore should not be construed as limiting the present invention.
The present application is described in further detail below with reference to the attached drawings.
Referring to fig. 1 and 2, the application provides a single crystal growing furnace structure, furnace body 10 including vertical setting, and two pipeline bodies 1 with the inside intercommunication of furnace body 10 simultaneously, the inlet end of pipeline body 1 links firmly with the flange between the furnace body 10, the end of giving vent to anger of two pipeline bodies 1 is connected with same main pipeline 6 jointly, pipeline body 1 and main pipeline 6 intercommunication, be provided with the ball valve 11 that is used for controlling the break-make of main pipeline 6 on the main pipeline 6, the end intercommunication of giving vent to anger of main pipeline 6 has the vacuum pump (not shown in the figure) that is used for the inside evacuation of furnace body 10, the end of giving vent to anger of main pipeline 6 is connected with one or more bellows 9, with shock attenuation or shock resistance who improves whole pipe-line system, between bellows 9 and the main pipeline 6, between the adjacent bellows 9, all link firmly through the flange between bellows 9 and the vacuum pump.
The pipeline body 1 is provided with an air inlet 2 which is communicated with an oxygen-containing airflow source capable of conveying the oxygen-containing airflow to the interior of the pipeline body 1; under the effect of vacuum pump, inside SiO (silicon steam) of furnace body 10 enters into inside pipeline body 1, and the inside temperature of pipeline body 1 is higher under heat-conducting effect, and when SiO contacted the oxygen that gets into through air inlet 2, the inside high temperature of pipeline body 1 made SiO oxidized rapidly under the effect of oxygen and generated the SiO that is difficult for the wall built-up rapidly 2 And SiO under the action of an oxygen-containing gas stream 2 Move towards the direction close to the air outlet end of the pipeline body 1, thereby greatly reducing the adhesion and accumulation of SiO on the inner wall of the pipeline body 1 2 SiO, dust or other impurities, reduces the air pressure fluctuation in the furnace body 10, and is beneficial to improving the quality of monocrystalline silicon.
Referring to fig. 1 and 2, in order to further reduce the accumulation of impurities on the inner wall of the pipe body 1, the pipe body 1 is obliquely arranged from top to bottom, and the gas inlet end of the pipe body 1 is positioned above the gas outlet end of the pipe body 1, so that SiO generated thereby 2 Or other impurities spontaneously roll or slide towards the air outlet end of the pipeline body 1.
In order to enable SiO to be oxidized as soon as possible so as to further reduce SiO adhered and accumulated on the inner wall of the pipeline body 1, the air inlet 2 is positioned at one end of the pipeline body 1 close to the furnace body 10, siO discharged from the furnace body 10 can contact oxygen and be oxidized as soon as possible, and the temperature of one end of the interior of the pipeline body 1 close to the furnace body 10 is higher, so that the combustion and oxidation of SiO are promoted more easily.
Similarly, the tube wall of the tube body 1 near the furnace body 10 directly contacts the furnace body 10, so the tube wall temperature of the tube body 1 is high, and if the temperature is too high, the service life of the whole pipeline system and the pneumatic elements arranged on the pipeline system will be affected. For this reason, the coaxial cover of one end that pipeline body 1 is close to furnace body 10 is equipped with water-cooling sleeve pipe 3, there is the space between water-cooling sleeve pipe 3's the inner wall and the outer wall of pipeline body 1, this space is inside to be provided with a water-cooling intermediate layer pipe 4 around 1 spiral coil cloth of pipeline body, the pipe wall of water-cooling sleeve pipe 3 is run through at the both ends of water-cooling intermediate layer pipe 4, this both ends extend and form water inlet 41 and delivery port 42 respectively to water-cooling sleeve pipe 3's outside, water inlet 41 is connected with the water source that is used for the pump sending cooling water, and then the realization is handled effective and timely cooling to pipeline body 1.
Referring to fig. 1 and 2, in order to facilitate the ash removal treatment of the interior of the pipeline body 1 after the manufacturing process is finished, an ash removal pipe 51 communicated with the interior of the pipeline body 1 is arranged on the pipeline body 1, the ash removal pipe 51 is arranged below the pipeline body 1, and a blind plug 52 for closing the orifice of the ash removal pipe 51 is screwed at the lower end of the ash removal pipe 51; on one hand, partial impurities and the like are accumulated in the ash removal pipe 51, and the blind plug 52 is opened when ash removal is needed, so that the ash removal treatment of the pipeline body 1 is facilitated; on the other hand, a temperature sensor (not shown) for monitoring the internal temperature of the duct body 1 may be disposed inside the ash removal pipe 51, so as to monitor and grasp the internal temperature of the duct body 1.
In addition, the pipeline bodies 1 and the main pipeline 6 are both provided with explosion-proof pipelines 71, one explosion-proof pipeline 71 is arranged on each pipeline body 1, and two explosion-proof pipelines are arranged on the main pipeline 6 and are respectively positioned at two sides of the ball valve 11; an anti-explosion cover 72 is hinged to an orifice of the anti-explosion pipeline 71, and when local explosion or over-high pressure occurs in the tank, the anti-explosion cover 72 is instantly opened to play a role in pressure relief protection; in addition, when ash removal treatment is required to be carried out on the interior of the pipe, the explosion-proof cover 72 is opened; because explosion-proof cover 72 is provided with a plurality ofly and the interval sets up, and then be convenient for carry out the deashing to each position department and can carry out effectual explosion-proof to each pipeline section.
In order to facilitate the monitoring of the pressure inside the pipeline by the staff, namely to confirm the normal operation of the vacuumizing state inside the pipeline, a pressure gauge 8 is arranged on the main pipeline 6.
To sum up, the application process of this application is:under the effect of vacuum pump, the inside silicon steam of furnace body 10 enters into inside pipeline body 1, and the inside temperature of pipeline body 1 is higher under heat-conducting effect, and when SiO contacted the oxygen that enters through air inlet 2, the inside high temperature of pipeline body 1 promoted SiO under the effect of oxygen rapidly by the oxidation and the SiO that is difficult for the wall built-up that generates 2 And SiO under the action of an oxygen-containing gas stream 2 Move towards the direction close to the air outlet end of the pipeline body 1, thereby greatly reducing the adhesion and accumulation of SiO on the inner wall of the pipeline body 1 2 SiO, dust or other impurities, reduces the air pressure fluctuation in the furnace body 10, and is beneficial to improving the quality of monocrystalline silicon.
The present embodiment is only for explaining the present application, and it is not limited to the present application, and those skilled in the art can make modifications of the present embodiment without inventive contribution as needed after reading the present specification, but all of them are protected by patent law within the scope of the claims of the present application.
Claims (9)
1. An evacuation conduit, characterized by: comprises a pipeline body (1), wherein an air inlet (2) communicated with the interior of the pipeline body (1) is arranged on the pipeline body (1);
the water-cooling jacket pipe (3) is sleeved on the pipeline body (1), the water-cooling interlayer pipe (4) is arranged between the water-cooling jacket pipe (3) and the pipeline body (1), and two ends of the water-cooling interlayer pipe (4) extend towards the outside of the water-cooling jacket pipe (3).
2. An evacuation conduit according to claim 1, wherein: the pipeline body (1) is provided with an ash removal pipe (51) communicated with the interior of the pipeline body (1), and the ash removal pipe (51) is detachably connected with a blind plug (52) used for sealing the ash removal pipe (51).
3. An evacuation conduit according to claim 1, wherein: the pipeline is characterized by further comprising a main pipeline (6) communicated with the pipeline body (1), wherein one or more explosion-proof covers (72) are arranged on the main pipeline (6) and the pipeline body (1).
4. An evacuation conduit according to claim 3, wherein: the main pipeline (6) or the pipeline body (1) is provided with a pressure gauge (8).
5. An evacuation conduit according to claim 4, wherein: the main pipeline (6) is communicated with one or more sections of corrugated pipes (9).
6. A structure of a single crystal growing furnace having the evacuation piping of any one of claims 1 to 5, wherein: comprises a furnace body (10) communicated with a pipeline body (1).
7. A single crystal furnace structure according to claim 6, wherein: the air inlet (2) is positioned at one end of the pipeline body (1) close to the furnace body (10).
8. A single crystal furnace structure according to claim 7, wherein: the water-cooling sleeve (3) is arranged close to the furnace body (10).
9. A single crystal furnace structure according to claim 7, wherein: the air inlet end of the pipeline body (1) is connected with the furnace body (10), the air inlet end of the pipeline body (1) is positioned above the air outlet end, and the pipeline body (1) is obliquely arranged from top to bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123269989.0U CN218666387U (en) | 2021-12-23 | 2021-12-23 | Evacuation pipeline and single crystal furnace structure with same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123269989.0U CN218666387U (en) | 2021-12-23 | 2021-12-23 | Evacuation pipeline and single crystal furnace structure with same |
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| Publication Number | Publication Date |
|---|---|
| CN218666387U true CN218666387U (en) | 2023-03-21 |
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| CN202123269989.0U Active CN218666387U (en) | 2021-12-23 | 2021-12-23 | Evacuation pipeline and single crystal furnace structure with same |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116377562A (en) * | 2023-05-29 | 2023-07-04 | 苏州晨晖智能设备有限公司 | Single crystal furnace and method for reducing silicon vapor in single crystal furnace |
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2021
- 2021-12-23 CN CN202123269989.0U patent/CN218666387U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116377562A (en) * | 2023-05-29 | 2023-07-04 | 苏州晨晖智能设备有限公司 | Single crystal furnace and method for reducing silicon vapor in single crystal furnace |
| CN116377562B (en) * | 2023-05-29 | 2023-08-22 | 苏州晨晖智能设备有限公司 | Single crystal furnace and method for reducing silicon vapor in single crystal furnace |
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