CN217459664U - Single crystal furnace equipment - Google Patents

Abstract

The embodiment of the application relates to the photovoltaic field, and provides single crystal furnace equipment, which comprises: the furnace body comprises a furnace body air inlet; the heat insulation layer is arranged in the furnace body and encloses a containing cavity; the crucible is arranged in the accommodating cavity; the exhaust pipeline is communicated with the accommodating cavity; the main pipeline is provided with a first air inlet and a first air outlet, and the first air inlet is communicated with the exhaust pipeline; the bent pipe is arranged on the side wall of the main pipeline and is communicated with the main pipeline, the bent pipe is provided with a second air inlet and a second air outlet, the second air inlet is positioned between the first air inlet and the second air outlet, and an included angle formed between the direction of the second air inlet and the direction of the first air inlet pointing to the furnace body is an acute angle or a right angle; the filtering device is communicated with the first air outlet; the power device is communicated with the filtering device; and the processing device is communicated with the power device. Is favorable for avoiding the back suction of impurities into the furnace body.

Description

Single crystal furnace equipment

Technical Field

The embodiment of the application relates to the field of photovoltaics, in particular to single crystal furnace equipment.

Background

The monocrystalline furnace is a basic raw material for producing the monocrystalline silicon solar cell, and the monocrystalline silicon is produced by a series of process methods by using the silicon raw material: at present, monocrystalline silicon is generally produced by a Czochralski method by taking a monocrystalline furnace as main equipment. The single crystal furnace is equipment for melting silicon materials by adopting a heater in an inert gas environment and growing dislocation-free single crystals by adopting a Czochralski method. One of the important factors determining the quality of the crystal pulling process is the cleanliness in the single crystal furnace.

However, there is a case where impurities are sucked back into the furnace body at present.

SUMMERY OF THE UTILITY MODEL

The embodiment of the application provides single crystal furnace equipment, which at least is beneficial to avoiding the problem that impurities are sucked back into a furnace body.

According to some embodiments of the present application, there is provided in one aspect of the embodiments of the present application a single crystal furnace apparatus comprising: the furnace body comprises a furnace body air inlet, and the furnace body air inlet is used for inputting air to the furnace body; the heat insulation layer is arranged in the furnace body and encloses an accommodating cavity; a crucible disposed within the receiving cavity; the exhaust pipeline penetrates through the bottom of the furnace body and the bottom of the heat insulation layer and is communicated with the accommodating cavity; the main pipeline is provided with a first air inlet and a first air outlet, and the first air inlet is communicated with the exhaust pipeline; the elbow is arranged on the side wall of the main pipeline and communicated with the main pipeline, the elbow is provided with a second air inlet and a second air outlet, the second air inlet is positioned between the first air inlet and the second air outlet, and an included angle formed between the direction of the second air inlet and the direction of the first air inlet pointing to the furnace body is an acute angle or a right angle; a filter device in communication with the first air outlet; the power device is communicated with the filtering device; a processing device in communication with the power device to transfer the gas through the power device into the processing device.

In some embodiments, the main pipe includes a first main pipe extending along a first direction and a second main pipe extending along a second direction, an included angle between an orientation direction of the second air outlet of the elbow pipe, in which the second air inlet is communicated with the first main pipe, and the second direction is 0 ° to 30 °, and an included angle between an orientation direction of the second air outlet of the elbow pipe, in which the second air inlet is communicated with the second main pipe, and the first direction is 0 ° to 30 °.

In some embodiments, the second outlet of the elbow with a second inlet in communication with the first main conduit faces in a direction parallel to the second direction.

In some embodiments, the angle between the first direction and the second direction is 120 ° to 180 °.

In some embodiments, the ratio of the pipe diameter of the elbow to the pipe diameter of the main pipe is 0.7-1.

In some embodiments, the elbow is disposed around the main conduit, and a projection of the elbow onto the surface of the main conduit in a direction in which the main conduit extends coincides.

In some embodiments, the angle between the orientation of the main conduit and the orientation of the second air outlet of the elbow is acute.

In some embodiments, the ratio of the pipe diameter of the elbow to the pipe diameter of the main pipe is 0.5-0.8.

In some embodiments, the elbow is detachably connected to the main pipe.

In some embodiments, the angle between the orientation of the second air inlet and the orientation of the second air outlet is 160 ° to 200 °.

The technical scheme provided by the embodiment of the application has at least the following advantages: through the return bend that sets up at the trunk line lateral wall, and the contained angle between the second air inlet orientation direction of return bend and the direction of the directional furnace body of first air inlet is acute angle or right angle, thereby make when single crystal growing furnace equipment takes place to return to inhale, thereby the flow direction of part impurity-mixed gas changes the air current through the return bend, thereby make the direction of giving vent to anger from the second gas outlet and return the air current direction of inhaling from the trunk line and take place the vortex phenomenon, thereby reduce the gas that returns to inhale into the furnace body through the trunk line, and then reduce the condition appearance that impurity got into in the single crystal growing furnace, improve the yield of production crystalline silicon.

Drawings

One or more embodiments are illustrated by corresponding figures in the drawings, which are not to be construed as limiting the embodiments, unless expressly stated otherwise, and the drawings are not to scale.

FIG. 1 is a schematic view of a single crystal furnace apparatus according to an embodiment of the present disclosure;

FIG. 2 is another single crystal furnace apparatus provided in an embodiment of the present disclosure.

Detailed Description

Known by the background art, at present, when single crystal growing furnace equipment was moved, inert gas entered into the furnace body through the furnace body air inlet to carry out the impurity that produces in the stove through exhaust duct and trunk line, but when the circumstances that power device is malfunctioning or single crystal growing furnace equipment has a power failure appeared, owing to hold the atmospheric pressure of intracavity lower, so can appear gaseous resorption and advance the circumstances that holds the intracavity, thereby lead to impurity to get into in the single crystal growing furnace, make in-process at production monocrystalline silicon, lead to the frequent appearance of disconnected arris phenomenon.

For solving above-mentioned problem, the embodiment of the present disclosure provides a single crystal growing furnace equipment, through the return bend that sets up and the trunk line intercommunication at the trunk line lateral wall, contained angle between the second air inlet orientation direction through setting up the return bend and the direction of the directional furnace body of first air inlet is acute angle or right angle, thereby can change the gaseous flow direction of returning the inhaling through the return bend, thereby make the gaseous vortex of returning the gas of inhaling to the gas that returns via the trunk line of return bend, thereby reduce and return the impurity of inhaling in the furnace body through the trunk line, and then improve the yield of single crystal growing furnace production monocrystalline silicon.

Embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in the examples of the present application, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments.

Referring to fig. 1 and 2, fig. 1 is a single crystal furnace apparatus according to an embodiment of the present disclosure, and fig. 2 is another single crystal furnace apparatus according to an embodiment of the present disclosure.

Specifically, the single crystal furnace equipment comprises: the furnace body 100 comprises a furnace body gas inlet 101, and the furnace body gas inlet 101 is used for inputting gas to the furnace body 100; the heat insulation layer 110 is arranged in the furnace body 100, and the heat insulation layer 110 encloses an accommodating cavity; a crucible 120, the crucible 120 being disposed within the receiving cavity; the exhaust pipeline 130, the exhaust pipeline 130 runs through the bottom of the furnace body 100 and the bottom of the insulating layer 110 and is communicated with the accommodating cavity; a main pipe 140, the main pipe 140 having a first air inlet 141 and a first air outlet 142, the first air inlet 141 being in communication with the exhaust pipe 130; the elbow 150 is arranged on the side wall of the main pipeline 140 and communicated with the main pipeline 140, the elbow 150 is provided with a second air inlet 151 and a second air outlet 152, the second air inlet 151 is positioned between the first air inlet 141 and the second air outlet 152, and an included angle between the direction of the second air inlet 151 and the direction of the first air inlet 141 pointing to the furnace body 100 is an acute angle or a right angle; a filter device 160, the filter device 160 being in communication with the first air outlet 142; the power device 170, the power device 170 is communicated with the filtering device 160; a processing device 180, the processing device 180 being in communication with the power device 170 for delivering gas to the processing device 180 through the power device 170.

Specifically, the furnace body 100 is used for providing the space of single crystal growing furnace production, and furnace body 100 itself has high temperature resistant, characteristics such as the leakproofness is good, has furnace body air inlet 101 at furnace body 100 top surface, can let in inert gas in the stove through furnace body air inlet 101, can take the impurity of production in the stove out of the stove through inert gas, and furnace body air inlet 101 can also be used for follow-up in-process of tearing open the stove to cool off furnace body 100.

The heat preservation layer 110 has excellent heat preservation performance, and in the process of producing single crystals, higher temperature needs to be kept in the furnace, namely, on one hand, the single crystal furnace equipment needs to be heated continuously, on the other hand, a good heat preservation effect needs to be provided for the temperature in the furnace, and the heat in the heat preservation layer 110 can be prevented from being dissipated by arranging the heat preservation layer 110, so that the heat requirement in the crystal pulling process of the single crystal furnace is met, the crystal pulling process is ensured to be carried out smoothly, and the crystal pulling efficiency is improved.

A containing cavity is formed in the heat-insulating layer 110 in an enclosing mode and used for containing the crucible 120 and the silicon materials, so that the crucible 120 and the silicon materials can be arranged in the containing cavity, the high-temperature requirement in the production process of monocrystalline silicon can be met, and the smooth proceeding of the crystal pulling process is ensured.

The crucible 120 has an arc-shaped cross section in a direction in which the first gas inlet 141 faces the furnace body 100, thereby accommodating silicon material.

Exhaust pipe 130, exhaust pipe 130 are used for discharging the gaseous discharge furnace body of furnace body air inlet 101 input in, can let in inert gas through furnace body air inlet 101 constantly to can provide the inert gas environment in the monocrystalline silicon production process, thereby avoid being oxidized in the monocrystalline silicon production process, and can take out the impurity of the production in the monocrystalline silicon production process outside furnace body 100 through inert gas, thereby make the production environment of furnace body 100 clean relatively.

In some embodiments, the number of the exhaust ducts 130 is two, and the exhaust ducts 130 are arranged at the bottom of the furnace body 100 at intervals in a direction perpendicular to the first gas inlet 141 and toward the furnace body 100, so that the gas introduced through the furnace body gas inlet 101 is uniformly exhausted out of the furnace body 100 through the exhaust ducts 130 at both sides; in other embodiments, the number of exhaust conduits 130 is a single or other number. The present disclosure does not limit the number of exhaust ducts 130.

Taking the number of the exhaust ducts 130 as two as an example, in some embodiments, two exhaust ducts 130 may be connected to one duct having multiple openings and then connected to the main duct 140, and in other embodiments, the main duct 140 may also be directly communicated with two exhaust ducts 130 to collect the air in the two exhaust ducts 130 together and discharge the air to the subsequent filtering device 160 for filtering.

The elbow 150 is arranged on the side wall of the main pipe 140, the second air inlet 151 of the elbow 150 is arranged adjacent to the first air inlet 141, the orientation direction of the second air inlet 151 and the direction of the first air inlet 141 towards the furnace body 100 form an acute angle or a right angle, when the back suction occurs, air leaves the elbow 150 from the second air inlet 151 through the elbow 152 via the second air outlet 152, when the air leaves the elbow 150, the air flow direction changes, when the orientation direction of the second air inlet 151 and the direction of the first air inlet 141 towards the furnace body 100 form an acute angle or a right angle, part of the back suction air flow changes to face the first air outlet 142 through the elbow 150, so that turbulent flow is generated on the air flow flowing from the first air outlet 142 to the first air inlet 141 in the main pipe 140, and the air flow and impurities in the furnace body 100 are reduced via the main pipe 140.

In some embodiments, the elbow 150 may also be disposed on the exhaust conduit 130 or other conduit, such as between the filter 160 and the power plant 170, to act as a back draft prevention.

In some embodiments, the ratio of the length of the pipe provided with the bent pipe 150 on the side wall to the length of all the pipes of the whole single crystal furnace device can be 0.3-0.8. It can be understood that when the ratio of the length of the pipeline provided with the bent pipe 150 to the length of all the pipelines of the whole single crystal furnace device is less than 0.3, the bent pipe 150 has a poor effect of improving the air flow return suction, and when the ratio of the length of the pipeline provided with the bent pipe 150 to the length of all the pipelines of the whole single crystal furnace device is greater than 0.8, the bent pipe 150 cannot be arranged on the side wall of part of the pipelines due to the occupied space and structural limitation of the whole single crystal furnace device, and the pipeline design of the existing single crystal furnace device is not compensated for the arrangement of the bent pipe 150. Therefore, the ratio of the length of the pipeline with the bent pipe 150 on the side wall to the length of all the pipelines of the whole single crystal furnace device can be 0.3-0.8, so that the single crystal furnace device is prevented from being greatly changed while the improvement effect of the bent pipe 150 is ensured.

It can be understood that, when the direction of the second air inlet 151 is perpendicular to the direction of the first air inlet 141 toward the furnace body 100, the air flowing out through the second air inlet 151 hits the inner wall of the main pipe 140, the direction of the air flow changes, a part of the air flow faces the first air inlet 141, a part of the air flow faces the first air outlet 142, a part of the air flow faces the second air inlet 151, and the part of the air flow facing the first air outlet 142 and the second air inlet 151 also generates turbulence phenomenon, which can also reduce the air flow and impurities flowing back into the furnace body 100 through the main pipe 140.

The filtering device 160, which may include a filter bag, filters the gas exhausted from the furnace body 100 through the filtering device 160, so as to be discharged into the processing device 180, thereby facilitating the collection and processing of the processing device 180.

The power unit 170 may be a device capable of pumping air, such as a power pump, and the flow of gas from the furnace body 100 to the processing device 180 is controlled by the power unit 170.

And the treatment device 180 is used for collecting waste gas generated in the furnace and inert gas introduced into the furnace, so that the gas in the single crystal furnace is prevented from being directly discharged into the atmosphere, and the environment is protected.

Referring to fig. 1, in some embodiments, the main pipe 140 may include a first main pipe 143 extending along a first direction and a second main pipe 144 extending along a second direction, an included angle between an orientation direction of the second air outlet 152 of the elbow 150 where the second air inlet 151 is communicated with the first main pipe 143 and the second direction is 0 ° to 30 °, and an included angle between an orientation direction of the second air outlet 152 of the elbow 150 where the second air inlet 151 is communicated with the second main pipe 144 and the first direction is 0 ° to 30 °, for example, 0 °, 13 ° or 27 °, and the like.

In some embodiments, the first main pipe 143 and the second main pipe 144 are integrated, and in another embodiment, the first main pipe 143 and the second main pipe 144 are detachably connected, it can be understood that, along with the occurrence of the gas exhaust furnace body or the gas back suction phenomenon, it is inevitable that some impurities may adhere to the inner walls of the first main pipe 143 and the second main pipe 144, and the main pipe 140 may be conveniently cleaned subsequently by detachably connecting the first main pipe 143 and the second main pipe 144.

Take first trunk line 143 and second trunk line 144 formula as an example, when single crystal growing furnace equipment takes place to return to inhale, can make the air current bump on trunk line 140 inner wall through setting up the first trunk line 143 that extends along the first direction and the second trunk line 144 that extends along the second direction to make the gas that returns to inhale kinetic energy loss appears, thereby reduce the probability that returns the gas and impurity entering furnace body 100 in.

Taking the single crystal furnace equipment shown in fig. 1 as an example, fig. 1 includes 3 first main pipes 143, 2 second main pipes 144 and 4 bent pipes 150, and one second main pipe 144 communicates with two adjacent first main pipes 143. When the gas is sucked back, the gas flows from the first gas outlet 142 to the first gas inlet 141, when the gas enters the second main pipe 144 through the first main pipe 143 closest to the filtering device 160, a part of the gas is branched through the elbow pipe 150, so that a part of the gas flows to the elbow pipe 150, a part of the gas flows to the second main pipe 144, and the part of the gas flowing to the elbow pipe 150 leaves the elbow pipe 150 through the second gas inlet 151 of the elbow pipe 150 to form turbulent flow towards the first gas outlet 142; the gas flow flowing to the second main pipe 144 also passes through the diversion of the elbow 150 when leaving the second main pipe 144, so that part of the gas flows to the first main pipe 143 in the middle, and part of the gas flows to the elbow 150, similarly, the diversion of the elbow 150 and the change of the direction of the gas flow reduce the gas flow sucked back into the furnace body 100.

The included angle between the orientation direction of the second air outlet 152 of the elbow 150 communicated with the first main pipeline 143 and the parallel second direction is 0-30 degrees, so that the air flow of the return air entering the elbow 150 can be improved, and more air can change the air flow direction through the elbow 150, thereby improving the return-suction prevention effect of the elbow 150.

It should be noted that, the larger the number of the bent pipes 150, the stronger the turbulence phenomenon provided, and the higher the cost brought by the same, so the number of the bent pipes 150, the number of the first main pipes 143, and the number of the second main pipes 144 can be adjusted according to the actual requirements.

In some embodiments, the second outlet 152 of the elbow 150, with the second inlet 151 in communication with the second main conduit 144, is oriented in a direction parallel to the first direction. That is, the included angle between the orientation direction of the second air outlet 152 of the elbow 150, which is communicated with the second main pipe 144, of the second air inlet 151 and the first direction is 0 °, so that when the back suction occurs, the gas leaving through the first main pipe 143 enters the elbow 150 as much as possible, the flow direction of the back suction gas flow is changed, the back suction gas and impurities are reduced to enter the furnace, and the smooth proceeding of the production process is ensured.

In some embodiments, the angle between the first direction and the second direction may be 120 ° to 180 °, i.e. the angle between the communicating first main conduit 143 and the second main conduit 144 is 120 ° to 180 °. The arrangement of the elbow pipe 150 is convenient to arrange by arranging the first main pipe 143 and the second main pipe 144 which have included angles, so that more gas can enter the elbow pipe 150 in the back suction process, the flow direction of the back suction gas is changed, and the production reliability is improved.

In some embodiments, the ratio of the pipe diameter of the elbow 150 to the pipe diameter of the main pipe 140 is 0.7-1. It can be understood that, when the ratio of the pipe diameter of the elbow 150 to the pipe diameter of the main pipe 140 is less than 0.7, the effect of the elbow 150 in changing the airflow direction is not good, and when the pipe diameter of the elbow 150 is greater than the pipe diameter of the main pipe 140, the space occupied by the elbow 150 is also larger, and the cost is higher, so that the ratio of the pipe diameter of the elbow 150 to the pipe diameter of the main pipe 140 is 0.7-1, so that the space and the cost occupied by the elbow 150 can be reduced while the return suction effect is improved by the elbow 150.

In summary, referring to fig. 1, when the back suction occurs, the airflow flows back to the main pipe 140 from the filtering device 160, and flows into the first main pipe 143, a part of the gas flowing out of the first main pipe 143 flows into the bent pipe 150, a part of the gas flows into the second main pipe 144, and the direction of the part of the gas flowing into the bent pipe 150 changes when flowing out through the bent pipe 150, so as to form a turbulent flow flowing to the filtering device 160, thereby disturbing the back suction airflow at the back, thereby reducing the back suction gas and impurities entering the furnace body 100, and when the gas flowing into the second main pipe 144 flows out of the second main pipe 144, the same part of the gas enters the bent pipe 150, and a part of the gas enters the first main pipe 143, and similarly reducing the back suction gas and impurities flowing to the furnace body 100, thereby reducing the gas flow rate of the gas flowing back into the furnace body 100, and reducing the possibility of the impurities entering the furnace body 100.

Referring to fig. 2, in some embodiments, the elbow 150 is disposed around the main conduit 140, and in the direction of extension of the main conduit 140, the projections of the elbow 150 on the surface of the main conduit 140 coincide. In other words, the elbows 150 may be arranged 360 ° around the main conduit, and the elbows 150 are staggered in a direction in which the first air inlets 141 are directed to the first air outlets 142. The number of the bent pipes 150 can be increased by arranging the bent pipes 150 around the main pipe 140, so that the effect of preventing the air flow from being sucked back by the bent pipes 150 is improved, and the reliability in the production process is improved.

In some embodiments, the spacing between adjacent elbows 150 can be 180 °, and in other embodiments, the spacing between adjacent elbows 150 can be other angles.

In some embodiments, the projections of the elbows 150 onto the surface of the main conduit 140 completely coincide, in other words, the elbows 150 are symmetrically disposed about the main conduit 140 on both sides of the elbows 150.

In some embodiments, the included angle between the orientation of the main pipe 140 and the orientation of the second air outlet 152 of the elbow 150 is an acute angle, and it can be understood that when the included angle between the second air outlet 152 and the main pipe 140 is an obtuse angle, the air flow rate of the back-sucked gas entering the elbow 150 is smaller, so that the air flow rate of the back-sucked gas entering the elbow 150 can be increased by setting the included angle between the orientation of the main pipe 140 and the orientation of the second air outlet 152 of the elbow 150 to be an acute angle, thereby improving the improvement effect of the elbow.

In some embodiments, the ratio of the pipe diameter of the elbow 150 to the pipe diameter of the main pipe 140 may be 0.5-0.8. Can be through surrounding main pipe 140 and setting up return bend 150, so can improve return bend 150 through the quantity that increases return bend 150 and improve the suck-back condition, it is corresponding, the quantity that has increased return bend 150 can be corresponding reduces the pipe diameter of return bend 150 equally, it can be understood, the airflow of suck-back air current receives the influence of main pipe 140's pipe diameter in a certain time, namely, in a certain time, the total amount of suck-back air current is certain, so quantity and return bend 150's pipe diameter through control return bend 150, thereby when guaranteeing the suck-back improvement effect, avoid the waste of space and cost.

In some embodiments, the angle between the orientation of second air inlet 151 and the orientation of second air outlet 152 is 160 ° to 200 °.

It can be understood that the angle between the orientation of the second gas inlet 151 and the orientation of the second gas outlet 152 is set to 160-200 ° so as to change the direction of the gas flow through the back suction, that is, the back suction gas flows into the main pipe 140 through the filtering device 160, and changes the direction of the gas flow back to the filtering device 160 through the bent pipe 150 on the side wall of the main pipe 140, so as to reduce the flow rate of the back suction gas flowing back to the furnace body 100, thereby improving the stability in the single crystal production process.

This disclosed embodiment sets up the return bend 150 with the main pipe 140 intercommunication through main pipe 140 lateral wall, the contained angle between the second air inlet 151 orientation direction through setting up return bend 150 and the directional furnace body 100's of first air inlet 141 direction is acute angle or right angle, thereby can change the gaseous flow direction of returning the absorption through return bend 150, thereby make the gaseous vortex that provides of return absorption to main pipe 140 of return bend 150, thereby reduce the impurity that returns the absorption into in the furnace body 100 through main pipe 140, and then improve the yield of single crystal silicon production of single crystal growing furnace.

It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples for carrying out the present application, and that various changes in form and details may be made therein without departing from the spirit and scope of the present application in practice. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the application, and it is intended that the scope of the application be limited only by the claims appended hereto.

Claims (10)

1. A single crystal furnace apparatus, comprising:

the furnace body comprises a furnace body air inlet, and the furnace body air inlet is used for inputting air to the furnace body;

the heat insulation layer is arranged in the furnace body and encloses an accommodating cavity;

a crucible disposed within the receiving cavity;

the exhaust pipeline penetrates through the bottom of the furnace body and the bottom of the heat insulation layer and is communicated with the accommodating cavity;

the main pipeline is provided with a first air inlet and a first air outlet, and the first air inlet is communicated with the exhaust pipeline;

the elbow is arranged on the side wall of the main pipeline and communicated with the main pipeline, the elbow is provided with a second air inlet and a second air outlet, the second air inlet is positioned between the first air inlet and the second air outlet, and an included angle formed between the direction of the second air inlet and the direction of the first air inlet pointing to the furnace body is an acute angle or a right angle;

a filter device in communication with the first air outlet;

the power device is communicated with the filtering device;

a processing device in communication with the power device to transfer the gas through the power device into the processing device.

2. The single crystal furnace equipment according to claim 1, wherein the main pipe comprises a first main pipe extending along a first direction and a second main pipe extending along a second direction, an included angle between the orientation direction of the second outlet of the elbow pipe, through which the second inlet is communicated with the first main pipe, and the second direction is 0-30 °, and an included angle between the orientation direction of the second outlet of the elbow pipe, through which the second inlet is communicated with the second main pipe, and the first direction is 0-30 °.

3. The single crystal furnace apparatus according to claim 2, wherein the second outlet of the bent pipe having a second inlet communicating with the first main pipe is oriented in a direction parallel to the second direction.

4. The single crystal furnace apparatus of claim 2, wherein an angle between the first direction and the second direction is 120 ° to 180 °.

5. The single crystal furnace equipment according to claim 2, wherein the ratio of the pipe diameter of the elbow pipe to the pipe diameter of the main pipe is 0.7-1.

6. The single crystal furnace apparatus according to claim 1, wherein the bent pipe is provided around the main pipe, and a projected portion of the bent pipe on a surface of the main pipe coincides with an extending direction of the main pipe.

7. The single crystal furnace apparatus according to claim 6, wherein an angle between an orientation of the main conduit and an orientation of the second gas outlet of the elbow is an acute angle.

8. The single crystal furnace equipment according to claim 6, wherein the ratio of the pipe diameter of the elbow pipe to the pipe diameter of the main pipe is 0.5-0.8.

9. The single crystal furnace apparatus according to claim 2 or 6, wherein the elbow is detachably connected to the main conduit.

10. The single crystal furnace apparatus of claim 1, wherein an angle between an orientation of the second gas inlet and an orientation of the second gas outlet is 160 ° to 200 °.

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