CN218648140U

CN218648140U - Low-profile SWB ultra-wideband antenna and array thereof

Info

Publication number: CN218648140U
Application number: CN202223031149.5U
Authority: CN
Inventors: 胡南; 谢文青; 刘建睿; 刘爽; 赵丽新
Original assignee: Beijing Xingyinglian Microwave Technology Co ltd
Current assignee: Beijing Xingyinglian Microwave Technology Co ltd
Priority date: 2022-11-15
Filing date: 2022-11-15
Publication date: 2023-03-17
Anticipated expiration: 2032-11-15

Abstract

The utility model discloses a low section SWB ultra wide band antenna and array thereof, ultra wide band antenna includes: a high impedance surface at the bottom layer, a quasi-complementary resonant structure at the middle layer, and a feed structure at the top layer. The broadband antenna adopts a quasi-complementary resonance structure, and can realize hundred-frequency multiplication; the working frequency band and the phase stability of the high-impedance surface can be effectively increased by adopting the high-impedance surface of the composite medium; the coplanar waveguide feed structure is adopted, and the microwave oven has the advantages of easy manufacture, easy realization of series connection and parallel connection of passive and active devices in a microwave circuit, easy improvement of circuit density and the like; in addition, the utility model has simple and compact structure, simple design process, low profile, light weight and convenient conformation of the wireless communication system structure; the utility model discloses an antenna is the microstrip structure, and processing technology is ripe, and the reliability is high, and the range of application is wide.

Description

Low-profile SWB ultra-wideband antenna and array thereof

Technical Field

The utility model relates to an antenna technical field for the communication especially relates to a low section SWB ultra wide band antenna and array thereof.

Background

In recent years, low-power electronic devices are widely applied in the field of wireless communication, and most of power supply methods are from batteries, but the batteries have service lives, so that workers need to replace the batteries regularly. Because the low-power-consumption equipment has low power consumption, a large number of students try to explore a novel power supply mode, so that the low-power-consumption equipment is free from the dependence on the traditional power supply mode, and the trouble that the staff regularly carries out equipment maintenance is solved.

Emerging radio frequency energy harvesting technologies help researchers to address this challenge. The technical principle is that an antenna with a specific frequency band is arranged at a radio frequency receiving end to convert radio frequency signals generated in environments such as a radio frequency transmitter or WIFI, a mobile base station, wireless broadcasting and the like into high-frequency alternating current signals, and the high-frequency alternating current signals are processed by an impedance matching and rectifying voltage-multiplying circuit and then output into stable direct current electric energy to be stored in an energy management circuit. Based on this technology, a radio frequency Energy Acquisition System (Rf Energy Acquisition System, rea) has come into force.

However, as is known, radio frequency energy in the environment is weak and spectrum is scattered, and if a narrowband antenna is used, sufficient radio frequency energy cannot be collected as much as possible to satisfy continuous operation of the device itself, while a broadband antenna with a larger bandwidth can collect radio frequency energy of more frequency bands.

Ultra-wideband (UWB) in the traditional sense refers to antenna technology operating in the frequency band range 3.1GHz-10.6GHz with a relative bandwidth of over 20%. However, for spatial rf energy harvesting, this frequency band range is far from sufficient, and still further improvement of the antenna bandwidth is needed. Therefore, an emerging concept of the SWB ultra-wideband (SWB) antenna is introduced, and the SWB antenna is characterized in that the impedance bandwidth ratio is more than 10: 1.

Through literature research, the working bandwidth of the existing SWB ultra-wideband antenna based on the prior art is several times to dozens of times of frequency ranges, and is difficult to reach hundreds of times of frequency bandwidth. Therefore, the performance of the prior art SWB ultra-wideband antenna for spatial electromagnetic energy collection applications is yet to be further improved.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the technical problem how to provide one kind can cover more or even whole communication frequency channel and bandwidth than enough big low section SWB ultra wide band antenna and array thereof.

In order to solve the technical problem, the utility model discloses the technical scheme who takes is: a low profile SWB ultra wideband antenna, comprising: the high-impedance surface is positioned on the bottom layer, the quasi-complementary resonant structure is positioned on the middle layer, and the feed structure is positioned on the top layer;

the high-impedance surface comprises a first dielectric plate located on the bottom layer, a second dielectric plate is arranged on the upper layer of the first dielectric plate, a metal back plate is formed on the lower surface of the first dielectric plate, a plurality of polygonal fractal metallization patterns which are arranged in an array mode are formed on the upper surface of the second dielectric plate, and each polygonal fractal metallization pattern is connected with the metal back plate through a metallization through hole.

The quasi-complementary resonance structure comprises a third dielectric slab, a metalized pattern is formed on the upper surface of the third dielectric slab, a fan-shaped notch is formed in one side of the metalized pattern, a half-moon-shaped patch is formed in the fan-shaped notch, the inner side tip portion of the half-moon-shaped patch is in contact with the metalized pattern, an L-shaped gap, an outer opening annular gap and an inner opening annular gap are formed in the half-moon-shaped patch, a half-moon-shaped window is formed in the metalized pattern and is symmetrical to the half-moon-shaped patch, an L-shaped branch joint is formed in the half-moon-shaped window and is symmetrical to the outer opening annular gap, an outer opening metal ring is arranged in the half-moon-shaped window and is symmetrical to the inner opening annular gap, and an inner opening metal ring is arranged in the half-moon-shaped window.

The further technical scheme is as follows: the polygonal fractal metallization graph comprises a hexagonal patch positioned in the center, a first discontinuous hexagonal ring is formed on the periphery of the hexagonal patch, a second discontinuous hexagonal ring is formed on the periphery of the first discontinuous hexagonal ring, and the overall structure of the polygonal fractal metallization graph is rotationally symmetrical.

Preferably, the number of the polygonal fractal metallization patterns is 8.

The further technical scheme is as follows: the L-shaped gap is located on the outer side of the third dielectric slab, the outer opening annular gap and the inner opening annular gap are located on the inner side of the third dielectric slab, and the inner opening annular gap is located in the outer opening annular gap.

The further technical scheme is as follows: the feed structure comprises a fourth dielectric plate, wherein a similar 8-shaped open ring is formed on the fourth dielectric plate, a feed line is formed in a gap of the similar 8-shaped open ring, the end part of the inner side of the feed line extends towards the inside of the similar 8-shaped open ring, and the end part of the outer side of the feed line extends to the edge of the fourth dielectric plate.

The further technical scheme is as follows: in the up-and-down projection direction, the half-moon patch and the half-moon window are positioned in the 8-shaped opening ring.

The further technical scheme is as follows: the outside in outside opening annular gap still overlaps and is equipped with a plurality of opening annular gap, the outside of outside opening becket still overlaps and is equipped with a plurality of opening becket.

The utility model also discloses a low section SWB ultra wide band antenna array, its characterized in that: the antenna array comprises a plurality of low-profile SWB ultra-wideband antennas which are arranged in a circumferential manner, complementary polygonal fractal metallization patterns are formed on the high-impedance surface of the bottom layer in the center of the antenna array, first circular open windows are formed on the quasi-complementary resonant structures of the middle layer corresponding to the complementary polygonal fractal metallization patterns, and second circular open windows are formed on the feed structures of the top layer corresponding to the first circular open windows.

Adopt the produced beneficial effect of above-mentioned technical scheme to lie in: the broadband antenna adopts a quasi-complementary resonance structure, and can realize hundred-frequency multiplication; the working frequency band and the phase stability of the high-impedance surface can be effectively increased by adopting the high-impedance surface of the composite medium; the coplanar waveguide feed structure is adopted, and the microwave oven has the advantages of easy manufacture, easy realization of series connection and parallel connection of passive and active devices in a microwave circuit, easy improvement of circuit density and the like; in addition, the utility model has simple and compact structure, simple design process, low profile, light weight and convenient conformation of the wireless communication system structure; the utility model discloses an antenna is the microstrip structure, and processing technology is ripe, and the reliability is high, and the range of application is wide.

Drawings

The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.

Fig. 1 is an exploded view of a three-dimensional structure of a low-profile SWB ultra-wideband antenna according to an embodiment of the present invention;

fig. 2 is a bottom structure diagram of a low-profile SWB ultra-wideband antenna according to an embodiment of the present invention;

fig. 3 is a schematic diagram of a hexagonal fractal pattern in a high impedance surface of an antenna according to an embodiment of the present invention;

fig. 4 is a structure diagram of an intermediate layer of a low-profile SWB ultra-wideband antenna according to an embodiment of the present invention;

fig. 5 is a top layer structure diagram of a low-profile SWB ultra-wideband antenna according to an embodiment of the present invention;

fig. 6 is a S11 characteristic curve of a low-profile SWB ultra-wideband antenna according to an embodiment of the present invention;

fig. 7 is an exploded view of a three-dimensional structure of an antenna array according to a second embodiment of the present invention;

fig. 8 is a bottom structure diagram of an antenna array according to a second embodiment of the present invention;

fig. 9 is a diagram of an intermediate layer structure of an antenna array according to a second embodiment of the present invention;

fig. 10 is a top structure diagram of an antenna array according to a second embodiment of the present invention;

wherein: 1. a high impedance surface; 101. a metal back plate; 102. metallizing the via hole; 103. a first dielectric plate; 104. a second dielectric plate; 105. polygonal fractal metallization graphs; 105-1, hexagonal patch; 105-2, a first discontinuous hexagonal ring; 105-3, discontinuous hexagonal ring 2; 2. a quasi-complementary resonant structure; 201. a third dielectric plate; 202. a half-moon shaped patch; 203. an L-shaped gap; 204. an externally open annular gap; 205. an internally open annular gap; 206. an inner open metal ring; 207. an outer open metal ring; 208. l-shaped branch knots; 209. a half-moon shaped window; 210. metallization patterns; 3. a feed structure; 301. a fourth dielectric plate 4; 302. like an 8-shaped split ring; 303. a feed line; 4. a high impedance surface of the bottom layer of the antenna array; 401. a supplemental polygonal fractal metallization pattern; 5. a quasi-complementary resonant structure of the antenna array middle layer; 501. a first round window is opened; 6. a feed structure on the top layer of the antenna array; 601. and the second round window is opened.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be implemented in other ways different from the specific details set forth herein, and one skilled in the art may similarly generalize the present invention without departing from the spirit of the present invention, and therefore the present invention is not limited to the specific embodiments disclosed below.

Example one

As shown in fig. 1, the utility model discloses a low section SWB ultra wide band antenna, include: a high impedance surface 1 at the bottom layer, a quasi-complementary resonant structure 2 at the middle layer and a feed structure 3 at the top layer.

Further, as shown in fig. 2, the high-impedance surface 1 includes a first dielectric plate 103 located at a bottom layer, a second dielectric plate 104 is disposed on an upper layer of the first dielectric plate 103, a metal back plate 102 is formed on a lower surface of the first dielectric plate 103, a plurality of polygonal fractal metallization patterns 105 arranged in an array are formed on an upper surface of the second dielectric plate 104, and each polygonal fractal metallization pattern 105 is connected to the metal back plate 102 through a metallization via hole 102. It should be noted that, the high impedance surface 1 may also adopt more dielectric plates with different dielectric constants, and is not limited to two dielectric plates.

Further, as shown in fig. 3, the polygonal fractal metallization pattern 105 includes a hexagonal patch 105-1 at the center, and preferably, the number of the polygonal fractal metallization patterns (105) is 8. The periphery of the hexagonal patch 105-1 is formed with a first discontinuous hexagonal ring 105-2, the periphery of the first discontinuous hexagonal ring 105-2 is formed with a second discontinuous hexagonal ring 105-3, and the whole structure of the polygonal fractal metallization pattern 105 presents rotational symmetry.

As a further improvement, the hexagonal shaped split ring 105 may also be an octagonal shaped split ring, a decagonal shaped split ring, or the like. The hexagonal shaped split ring 105 can also be designed into a more layered ring nesting structure, not limited to the hexagonal patch 105-1, the first discontinuous hexagonal ring 105-2 and the second discontinuous hexagonal ring 105-3, and several discontinuous hexagonal rings can be added on the periphery.

The bottom layer is a high-impedance surface structure carrying a hexagonal fractal pattern based on a composite dielectric plate. Microstrip antennas in conventional electromagnetism generally include a top layer microstrip patch, a middle dielectric layer, and a bottom metal ground. The metal ground can be regarded as an ideal electric wall, and the electromagnetic wave after incidence will generate 180 DEG phase reversal. To maximize gain, the metal ground is spaced approximately one-quarter of the operating wavelength from the microstrip patch. Because the back radiation of the top microstrip patch is reflected metallically and returns to the original position, the back radiation can be superposed with the forward radiation of the top microstrip patch in the same direction through a half-wavelength wave path and 180-degree phase inversion. However, when the operating frequency is low, the quarter wavelength is often large, which results in a high profile of the antenna, which cannot be used in some environments, and the application range is limited. If the 180 ° phase reversal caused by metallic ground reflection can be eliminated, the profile height of the antenna can be significantly reduced. The high-impedance surface is an artificial superstructure capable of realizing the same-phase reflection of electromagnetic waves, and the problem of large section height can be effectively solved by adopting the high-impedance surface to replace the traditional metal. And through utility model people's research accumulation, adopt the different dielectric constant's of multilayer composite dielectric plate can effectively increase the frequency band and the phase stability on high impedance surface in high impedance surface, have the important function to the wholeness ability that promotes the antenna. The utility model discloses in, when the antenna is in lower frequency channel, the section that the high impedance surface brought reduces the effect and seems especially outstanding. When the antenna is in a higher frequency band, the wavelength of high-frequency electromagnetic waves is very small, the section reduction effect caused by the high-impedance surface is not prominent any more, and the high-impedance surface can be regarded as a common metal reflecting plate.

As shown in fig. 4, the quasi-complementary resonant structure 2 includes a third dielectric slab 201, a metallization pattern 210 is formed on an upper surface of the third dielectric slab 201, a fan-shaped notch is formed on one side of the metallization pattern 210, a half-moon patch 202 is formed in the fan-shaped notch, and an inner tip of the half-moon patch 202 is in contact with the metallization pattern 210; an L-shaped gap 203, an external opening annular gap 204 and an internal opening annular gap 205 are formed on the half-moon patch 202, a half-moon-shaped window 209 is formed on the metallization pattern 210 symmetrical to the half-moon patch 202, an L-shaped branch 208 is formed in the half-moon-shaped window 209 symmetrical to the L-shaped gap 203, an external opening metal ring 207 is arranged in the half-moon-shaped window 209 symmetrical to the external opening annular gap 204, and an internal opening metal ring 206 is arranged in the half-moon-shaped window 209 symmetrical to the internal opening annular gap 205.

Further, as shown in fig. 4, the L-shaped slit 203 is located outside the third dielectric plate 201, the outer open annular slit 204 and the inner open annular slit 205 are located inside the third dielectric plate 201, and the inner open annular slit 205 is located inside the outer open annular slit 204.

Further, the quasi-complementary resonant structure 2 can also exchange the positions of the left structure and the right structure. The L-shaped slot 203, and the L-shaped branch 208, may also be other shapes. The half-moon shaped patch 202 and half-moon shaped window 209 may also be other shapes. The outer sides of the outer open annular slit 204 and the inner open annular slit 205 may also increase the number of slits. Similarly, the inner open metal ring; 206 and the outer side of the outer open metal ring 207, the number of metal rings may also be increased at the periphery. Meanwhile, the ring can be a circular ring, a rectangular ring or other polygonal rings and the like.

In the application, the middle layer adopts a quasi-complementary resonance structure, the structure is the key point for realizing the hundred-frequency-multiplication SWB ultra-wideband, the input impedance of the structure can be kept stable in a very wide frequency band, and therefore the complementary structure is a better choice for designing the SWB ultra-wideband antenna.

Further, as shown in fig. 5, the feeding structure 3 includes a fourth dielectric plate 301, an 8-like open ring 302 is formed on the fourth dielectric plate 301, a feeding line 303 is formed in a gap of the 8-like open ring 302, an inner end of the feeding line 303 extends into the 8-like open ring 302, and an outer end of the feeding line 303 extends to an edge of the fourth dielectric plate 301. Furthermore, in the up-down projection direction, the half-moon shaped patch 202 and the half-moon shaped window 209 are located within the "8" -like shaped open ring 302. As a further improvement, the figures on both sides of the 8-like open ring 302 can be circular, rectangular or polygonal.

The top layer is a coplanar waveguide feed structure, the structure is used as a microwave planar transmission line with excellent performance and convenient processing, plays an increasingly greater role in MMIC monolithic microwave integrated circuits, and has incomparable performance advantages compared with microstrip lines particularly in millimeter wave frequency bands. Compared with the conventional microstrip transmission line, the coplanar waveguide has the advantages of easy manufacture, easy realization of series connection and parallel connection of passive and active devices in a microwave circuit, easy improvement of circuit density and the like.

Example two

The utility model also discloses a low-profile SWB ultra-wideband antenna array, which comprises a plurality of low-profile SWB ultra-wideband antennas, the structure is obtained by the rotation arrangement of the antennas in the first embodiment,

a complementary polygonal fractal metallization pattern 401 is formed in the center of the high-impedance surface 4 of the bottom antenna array layer, a first circular opening window 501 is formed on the quasi-complementary resonant structure 5 of the middle antenna array layer corresponding to the complementary polygonal fractal metallization pattern 401, and a second circular opening window 601 is formed on the feed structure 6 of the top antenna array layer corresponding to the first circular opening window 501.

After arranging through the rotation, the utility model discloses overall structure's optimization adjustment has still been carried out. A supplemental polygonal fractal metallization pattern 401 is added in the central portion of the bottom layer as shown in fig. 8. A first circular opening window and a second circular opening window are respectively added on the middle layer and the top layer.

As a further improvement, the antenna array in the second embodiment may adopt the antenna units in the four first embodiments, or may adopt a plurality of antenna units in the first embodiment. The rotary arrangement mode can be adopted, and the translational or symmetrical arrangement mode can also be adopted.

Claims

1. A low profile SWB ultra wideband antenna, comprising: a high impedance surface (1) at the bottom layer, a quasi-complementary resonant structure (2) at the middle layer and a feed structure (3) at the top layer;

the high-impedance surface (1) comprises a first dielectric plate (103) positioned at the bottom layer, a second dielectric plate (104) is arranged at the upper layer of the first dielectric plate (103), a metal back plate (101) is formed at the lower surface of the first dielectric plate (103), a plurality of polygonal fractal metallization patterns (105) arranged in an array are formed at the upper surface of the second dielectric plate (104), and each polygonal fractal metallization pattern (105) is connected with the metal back plate (101) through a metallization through hole (102);

the quasi-complementary resonant structure (2) comprises a third dielectric plate (201), a metalized graph (210) is formed on the upper surface of the third dielectric plate (201), a fan-shaped notch is formed on one side of the metalized graph (210), a half-moon-shaped patch (202) is formed in the fan-shaped notch, the tip portion of the inner side of the half-moon-shaped patch (202) is in contact with the metalized graph (210), an L-shaped gap (203), an outer opening annular gap (204) and an inner opening annular gap (205) are formed on the half-moon-shaped patch (202), a half-moon-shaped window (209) is formed on the metalized graph (210) symmetrical to the half-moon-shaped patch (202), an L-shaped branch node (208) is formed in the half-moon-shaped window (209) symmetrical to the L-shaped gap (203), an outer opening metal ring (207) is arranged in the half-moon-shaped window (209) symmetrical to the outer opening annular gap (204), and an inner opening metal ring (206) is arranged in the half-moon-shaped window (209) symmetrical to the inner opening annular gap (205).

2. The low-profile SWB ultra-wideband antenna of claim 1, wherein: the polygonal fractal metallization pattern (105) comprises a hexagonal patch (105-1) located in the center, a first discontinuous hexagonal ring (105-2) is formed on the periphery of the hexagonal patch (105-1), a second discontinuous hexagonal ring (105-3) is formed on the periphery of the first discontinuous hexagonal ring (105-2), and the overall structure of the polygonal fractal metallization pattern (105) is rotationally symmetrical.

3. The low-profile SWB ultra-wideband antenna of claim 1, wherein: the number of the polygonal fractal metallization patterns (105) is 8.

4. The low-profile SWB ultra-wideband antenna of claim 1, wherein: the L-shaped gap (203) is located on the outer side of the third dielectric plate (201), the outer opening annular gap (204) and the inner opening annular gap (205) are located on the inner side of the third dielectric plate (201), and the inner opening annular gap (205) is located in the outer opening annular gap (204).

5. The low-profile SWB ultra-wideband antenna of claim 1, wherein: the feed structure (3) comprises a fourth dielectric plate (301), an 8-like split ring (302) is formed on the fourth dielectric plate (301), a feed line (303) is formed in a gap of the 8-like split ring (302), the end part of the inner side of the feed line (303) extends towards the inside of the 8-like split ring (302), and the end part of the outer side of the feed line (303) extends to the edge of the fourth dielectric plate (301).

6. The low-profile SWB ultra-wideband antenna of claim 5, wherein: in the up-down projection direction, the half-moon shaped patch (202) and the half-moon shaped window (209) are located within the "8" like shaped open ring (302).

7. The low-profile SWB ultra-wideband antenna of claim 6, wherein: the outside of outside opening annular gap (204) still overlaps and is equipped with a plurality of opening annular gap, the outside of outside opening becket (207) still overlaps and is equipped with a plurality of opening becket.

8. A low-profile SWB ultra-wideband antenna array, characterized by: the low-profile SWB ultra-wideband antenna comprises a plurality of low-profile SWB ultra-wideband antennas according to any one of claims 1 to 7, wherein the SWB ultra-wideband antennas are arranged in a circumferential manner, a complementary polygonal fractal metallization pattern (401) is formed in the center of a high-impedance surface (4) of the bottom layer of the antenna array, a first circular windowing window (501) is formed on a quasi-complementary resonant structure (5) of the middle layer of the antenna array corresponding to the complementary polygonal fractal metallization pattern (401), and a second circular windowing window (601) is formed on a feeding structure (6) of the top layer of the antenna array corresponding to the first circular windowing window (501).