CN115714268B - Low-profile SWB ultra wideband antenna and array thereof - Google Patents
Low-profile SWB ultra wideband antenna and array thereof Download PDFInfo
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Abstract
The invention discloses a low-profile SWB ultra-wideband antenna and an array thereof, wherein the ultra-wideband antenna comprises: a high impedance surface at the bottom layer, a quasi-complementary resonant structure at the middle layer, and a feed structure at the top layer. The broadband antenna adopts a quasi-complementary resonance structure, so that hundred-frequency multiplication can be realized; the composite medium high-impedance surface is adopted, so that the working frequency band and the phase stability of the high-impedance surface can be effectively increased; the coplanar waveguide feed structure is adopted, so that the coaxial waveguide feed structure has the advantages of easiness in manufacturing, easiness in realizing series connection and parallel connection of passive and active devices in a microwave circuit, easiness in improving circuit density and the like; in addition, the invention has simple and compact structure, simple design process, low section and light weight, and is convenient for the conformal structure of the wireless communication system; the antenna of the invention has the advantages of microstrip structure, mature processing technology, high reliability and wide application range.
Description
Technical Field
The invention relates to the technical field of antennas for communication, in particular to a low-profile SWB ultra-wideband antenna and an array thereof.
Background
In recent years, low-power electronic devices are widely applied in the field of wireless communication, and most of power supply modes of the low-power electronic devices are from batteries, but the batteries themselves have service lives, so that the low-power electronic devices need to be replaced by staff regularly. Because the power consumption of the low-power-consumption equipment is low, a large number of students are struggling to explore a novel power supply mode, so that the low-power-consumption equipment gets rid of the dependence on the traditional power supply mode, and the trouble that staff regularly carry out equipment maintenance is solved.
Emerging rf energy harvesting techniques help researchers solve this problem. The technical principle is that an antenna with a specific frequency band is arranged at a radio frequency receiving end to convert radio frequency signals generated in environments such as a radio frequency transmitter or WIFI, a mobile base station, wireless broadcasting and the like into high-frequency alternating current signals, and the high-frequency alternating current signals are processed by an impedance matching and rectifying voltage doubling circuit and then output into stable direct current electric energy to be stored in an energy management circuit. Based on this technology, a radio frequency energy harvesting system (Rf Energy Acquisition System, REAS) has developed.
However, it is known that the rf energy in the environment is weak and the spectrum is scattered, and if a narrowband antenna is used, it is not possible to collect as much rf energy as possible to meet the continuous operation of the device itself, and a wideband antenna with a larger bandwidth can collect more rf energy in the frequency band.
Ultra-wideband (UWB) in the traditional sense refers to antenna technology that operates in the 3.1GHz-10.6GHz band with a relative bandwidth of over 20%. However, for spatial rf energy harvesting, this frequency range is far from sufficient, and there is still a need to further increase the antenna bandwidth. Thus, an emerging concept, namely SWB ultra-wideband (SWB) antennas, is introduced, which refers to an impedance bandwidth ratio of more than 10: 1.
Through literature research, the working bandwidth of the SWB ultra wideband antenna based on the prior art is several times to tens of times of frequency ranges, and the frequency-hundred-multiplication bandwidth is difficult to reach. Therefore, SWB ultra wideband antennas based on the prior art have yet to be further improved in performance for spatial electromagnetic energy harvesting applications.
Disclosure of Invention
The technical problem to be solved by the invention is how to provide a low-profile SWB ultra wideband antenna and an array thereof, which can cover more or even all communication frequency bands and have a bandwidth ratio large enough.
In order to solve the technical problems, the invention adopts the following technical scheme: a low profile SWB ultra wideband antenna comprising: a high impedance surface at the bottom layer, a quasi-complementary resonant structure at the middle layer, and a feed structure at the top layer.
The further technical proposal is that: the high-impedance surface comprises a first dielectric plate positioned at a bottom layer, a second dielectric plate is arranged at the upper layer of the first dielectric plate, a metal backboard is formed on the lower surface of the first dielectric plate, a plurality of polygonal fractal metallization patterns which are arranged in an array are formed on the upper surface of the second dielectric plate, and each polygonal fractal metallization pattern is connected with the metal backboard through a metallization via hole.
The further technical proposal is that: the polygon fractal metallization pattern comprises a hexagon patch positioned at the center, a first discontinuous hexagon ring is formed on the periphery of the hexagon patch, a second discontinuous hexagon ring is formed on the periphery of the first discontinuous hexagon ring, and the whole polygon fractal metallization pattern structure is rotationally symmetrical.
Preferably, 8 fractal metallization patterns are arranged.
The further technical proposal is that: the quasi-complementary resonance structure comprises a third dielectric plate, a metallization pattern is formed on the upper surface of the third dielectric plate, a fan-shaped notch is formed on one side of the metallization pattern, a half-moon shaped patch is formed in the fan-shaped notch, the inner tip of the half-moon shaped patch is in contact with the metallization pattern, an L-shaped gap, an outer opening annular gap and an inner opening annular gap are formed on the half-moon shaped patch, a half-moon shaped window symmetrical to the half-moon shaped patch is formed on the metallization pattern, an L-shaped branch is formed in the half-moon shaped window symmetrical to the L-shaped gap, an outer opening metal ring is arranged in the half-moon shaped window symmetrical to the outer opening annular gap, and an inner opening metal ring is arranged in the half-moon shaped window symmetrical to the inner opening annular gap.
The further technical proposal is that: the L-shaped gap is arranged on the outer side of the third dielectric plate, the outer opening annular gap and the inner opening annular gap are arranged on the inner side of the third dielectric plate, and the inner opening annular gap is arranged in the outer opening annular gap.
The further technical proposal is that: the feed structure comprises a fourth dielectric plate, an 8-shaped opening ring is formed on the fourth dielectric plate, a feed line is formed in a notch of the 8-shaped opening ring, the inner side end part of the feed line extends to the inner part of the 8-shaped opening ring, and the outer side end part of the feed line extends to the edge of the fourth dielectric plate.
The further technical proposal is that: in the up-down projection direction, the half-moon shaped patch and the half-moon shaped window are positioned in the 8-shaped opening ring.
The further technical proposal is that: the outside of outside open ring slit still overlaps and is equipped with a plurality of open ring slit, the outside of outside open metal ring still overlaps and is equipped with a plurality of open metal ring.
The invention also discloses a low-profile SWB ultra-wideband antenna array, which is characterized in that: the low-profile SWB ultra-wideband antenna comprises a plurality of low-profile SWB ultra-wideband antennas which are arranged in a circumferential manner, wherein a complementary polygonal fractal metallization pattern is formed on the high-impedance surface of the bottom layer at the center of the antenna array, a first circular windowing is formed on the quasi-complementary resonance structure of the middle layer corresponding to the complementary polygonal fractal metallization pattern, and a second circular windowing is formed on the feed structure of the top layer corresponding to the first circular windowing.
The beneficial effects of adopting above-mentioned technical scheme to produce lie in: the broadband antenna adopts a quasi-complementary resonance structure, so that hundred-frequency multiplication can be realized; the composite medium high-impedance surface is adopted, so that the working frequency band and the phase stability of the high-impedance surface can be effectively increased; the coplanar waveguide feed structure is adopted, so that the coaxial waveguide feed structure has the advantages of easiness in manufacturing, easiness in realizing series connection and parallel connection of passive and active devices in a microwave circuit, easiness in improving circuit density and the like; in addition, the invention has simple and compact structure, simple design process, low section and light weight, and is convenient for the conformal structure of the wireless communication system; the antenna of the invention has the advantages of microstrip structure, mature processing technology, high reliability and wide application range.
Drawings
The invention will be described in further detail with reference to the drawings and the detailed description.
FIG. 1 is an exploded view of a three-dimensional structure of a low-profile SWB ultra wideband antenna according to an embodiment of the present invention;
fig. 2 is a bottom-layer structure diagram of a low-profile SWB ultra wideband antenna according to an embodiment of the present invention;
fig. 3 is a hexagonal fractal pattern in the high impedance surface of an antenna according to an embodiment of the present invention;
FIG. 4 is a diagram showing an intermediate layer structure of a low profile SWB ultra wideband antenna according to an embodiment of the present invention;
fig. 5 is a top layer structure diagram of the low-profile SWB ultra wideband antenna according to an embodiment of the present invention;
FIG. 6 is a graph showing the S11 characteristic of a low profile SWB ultra wideband antenna according to an embodiment of the present invention;
FIG. 7 is an exploded view of a three-dimensional structure of an antenna array according to a second embodiment of the present invention;
fig. 8 is a bottom-layer structure diagram of an antenna array according to a second embodiment of the present invention;
fig. 9 is a diagram showing an intermediate layer structure of an antenna array according to a second embodiment of the present invention;
fig. 10 is a top layer structure diagram of an antenna array according to a second embodiment of the present invention;
wherein: 1. a high impedance surface; 101. a metal backplate; 102. metallizing the via hole; 103. a first dielectric plate; 104. a second dielectric plate; 105. polygonal fractal metallization patterns; 105-1, hexagonal patches; 105-2, a first discontinuous hexagonal ring; 105-3, discontinuous hexagonal ring 2; 2. quasi-complementary resonant structures; 201. a third dielectric plate; 202. a half-moon shaped patch; 203. an L-shaped slit; 204. an outer open annular slit; 205. an internally open annular slit; 206. an internally open metal ring; 207. an outer split metal ring; 208. l-shaped branches; 209. a half moon window; 210. a metallized pattern; 3. a feed structure; 301. a fourth dielectric plate 4; 302. an opening ring like an 8 shape; 303. a feeder line; 4. a high impedance surface of the antenna array substrate; 401. supplementary polygonal fractal metallization patterns; 5. quasi-complementary resonant structure of the antenna array intermediate layer; 501. a first circular fenestration; 6. a feed structure at a top layer of the antenna array; 601. and a second round window.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways other than those described herein, and persons skilled in the art will readily appreciate that the present invention is not limited to the specific embodiments disclosed below.
Example 1
As shown in fig. 1, the present invention discloses a low profile SWB ultra wideband antenna comprising: a high impedance surface 1 at the bottom, a quasi-complementary resonant structure 2 at the middle and a feed structure 3 at the top.
Further, as shown in fig. 2, the high-impedance surface 1 includes a first dielectric plate 103 located at a bottom layer, a second dielectric plate 104 is disposed at an upper layer of the first dielectric plate 103, a metal back plate 102 is formed on a lower surface of the first dielectric plate 103, a plurality of polygonal fractal metallization patterns 105 arranged in an array are formed on an upper surface of the second dielectric plate 104, and each polygonal fractal metallization pattern 105 is connected with the metal back plate 102 through a metallization via 102. It should be noted that, the high-impedance surface 1 may also use more dielectric plates with different dielectric constants, and is not limited to two dielectric plates.
Further, as shown in fig. 3, the polygonal fractal metallization pattern 105 includes a hexagonal patch 105-1 at the center, and preferably, 8 polygonal fractal metallization patterns (105) are provided. The periphery of the hexagonal patch 105-1 is formed with a first discontinuous hexagonal ring 105-2, the periphery of the first discontinuous hexagonal ring 105-2 is formed with a second discontinuous hexagonal ring 105-3, and the overall structure of the polygonal fractal metallization pattern 105 presents rotational symmetry.
As a further improvement, the hexagonal fractal ring 105 may be an octagonal fractal ring, a decagonal fractal ring, or the like. The hexagonal fractal ring 105 may be further designed into a multi-layer annular nested structure, not limited to the hexagonal patch 105-1, the first discontinuous hexagonal ring 105-2 and the second discontinuous hexagonal ring 105-3, and a plurality of discontinuous hexagonal rings may be added at the periphery.
The bottom layer is a high-impedance surface structure based on a hexagonal fractal pattern carried by the composite dielectric plate. Microstrip antennas in conventional electromagnetics generally comprise a top microstrip patch, an intermediate dielectric layer, and a bottom metal ground. The metallic ground can be regarded as an ideal electric wall, and 180-degree phase inversion is generated after electromagnetic waves are incident. To maximize gain, the distance of the metal ground from the microstrip patch is approximately one quarter of the operating wavelength. Because the back radiation of the top microstrip patch is reflected by metal and returns to the original position, the back radiation of the top microstrip patch can be just overlapped with the forward radiation of the top microstrip patch in the same direction through half wavelength wave path and 180 degrees of phase inversion. However, when the operating frequency is low, the quarter wavelength tends to be large, which results in a high profile of the antenna, which cannot be used in certain environments, and the application range is limited. If the 180 phase reversal caused by metallic ground reflection can be eliminated, the cross-sectional height of the antenna can be significantly reduced. The high-impedance surface is an artificial super structure capable of realizing electromagnetic wave in-phase reflection, and the problem of large section height can be effectively solved by adopting the high-impedance surface to replace the traditional metal ground. And through research and accumulation of the inventor, the working frequency band and the phase stability of the high-impedance surface can be effectively increased by adopting a plurality of layers of composite dielectric plates with different dielectric constants in the high-impedance surface, and the antenna has an important role in improving the overall performance of the antenna. In the invention, the section reduction effect caused by the high impedance surface is particularly remarkable when the antenna is in a lower frequency band. When the antenna is in a higher frequency band, the wavelength of electromagnetic wave of high frequency is very small, the section reduction effect caused by the high-impedance surface is not prominent, and the high-impedance surface can be regarded as a common metal reflecting plate.
As shown in fig. 4, the quasi-complementary resonant structure 2 includes a third dielectric plate 201, a metallized pattern 210 is formed on the upper surface of the third dielectric plate 201, a fan-shaped notch is formed on one side of the metallized pattern 210, a half-moon patch 202 is formed in the fan-shaped notch, and an inner tip of the half-moon patch 202 contacts with the metallized pattern 210; the half-moon shaped patch 202 is formed with an L-shaped slit 203, an outer opening annular slit 204 and an inner opening annular slit 205, a half-moon shaped window 209 is formed on the metallization pattern 210 symmetrical to the half-moon shaped patch 202, an L-shaped branch 208 is formed in the half-moon shaped window 209 symmetrical to the L-shaped slit 203, an outer opening metal ring 207 is arranged in the half-moon shaped window 209 symmetrical to the outer opening annular slit 204, and an inner opening metal ring 206 is arranged in the half-moon shaped window 209 symmetrical to the inner opening annular slit 205.
Further, as shown in fig. 4, the L-shaped slit 203 is disposed outside the third dielectric plate 201, the outer annular slit 204 and the inner annular slit 205 are disposed inside the third dielectric plate 201, and the inner annular slit 205 is disposed inside the outer annular slit 204.
Further, the quasi-complementary resonant structure 2 can also change the positions of the left and right structures. The L-shaped slit 203, and the L-shaped stub 208 may also be other shapes. The half-moon patch 202 and half-moon window 209 may also be other shapes. The outer side of the outer open annular slit 204, and the inner open annular slit 205 may also increase the number of slits. Similarly, the inner split metal ring; 206 and the outer sides of the outer split metal rings 207, can also be peripherally increased in number. Meanwhile, the ring can be a circular ring, a rectangular ring or other polygonal rings, and the like.
In the application, the intermediate layer adopts a quasi-complementary resonant structure, the adoption of the structure is the key point for realizing the frequency-hundred-multiplication SWB ultra-wideband, and the input impedance of the structure can be kept stable in a very wide frequency band, so that the complementary structure is a better choice for designing the SWB ultra-wideband antenna.
Further, as shown in fig. 5, the feeding structure 3 includes a fourth dielectric plate 301, an "8" -shaped split ring 302 is formed on the fourth dielectric plate 301, a feeding line 303 is formed in a notch of the "8" -shaped split ring 302, an inner end of the feeding line 303 extends toward the inside of the "8" -shaped split ring 302, and an outer end of the feeding line 303 extends to an edge of the fourth dielectric plate 301. Furthermore, in the up-down projection direction, the half-moon patch 202 and the half-moon window 209 are located within the "8" -shaped split ring 302. As a further improvement, the patterns on two sides of the opening ring 302 in the shape of the "8" can be circular, rectangular or polygonal.
The top layer is a coplanar waveguide feed structure, and the structure is used as a microwave planar transmission line with excellent performance and convenient processing, plays an increasingly large role in an MMIC monolithic microwave integrated circuit, particularly reaches a millimeter wave frequency band, and the coplanar waveguide has performance advantages which are incomparable with microstrip lines. Compared with the conventional microstrip transmission line, the coplanar waveguide has the advantages of easy manufacture, easy realization of series connection and parallel connection of passive and active devices in a microwave circuit, easy improvement of circuit density and the like.
Example two
The invention also discloses a low-profile SWB ultra-wideband antenna array, which comprises a plurality of low-profile SWB ultra-wideband antennas, wherein the structure is obtained by rotationally arranging the antennas in the first embodiment,
a complementary polygonal fractal metallization pattern 401 is formed on the center of the high-impedance surface 4 of the bottom layer of the antenna array, a first circular window 501 is formed on the quasi-complementary resonant structure 5 of the middle layer of the antenna array corresponding to the complementary polygonal fractal metallization pattern 401, and a second circular window 601 is formed on the feed structure 6 of the top layer of the antenna array corresponding to the first circular window 501.
After the rotary arrangement, the invention also performs the optimization adjustment of the integral structure. A supplemental polygonal fractal metallization pattern 401 is added to the center portion of the underlayer, as shown in fig. 8. The first round window and the second round window are respectively added on the middle layer and the top layer.
As a further improvement, the antenna array according to the second embodiment may use the antenna unit according to the first four embodiments, or may use the antenna unit according to the first multiple embodiments. The arrangement can be rotationally or horizontally or symmetrically.
Claims (4)
1. A low profile SWB ultra wideband antenna comprising: a high impedance surface (1) at the bottom layer, a quasi-complementary resonant structure (2) at the middle layer and a feed structure (3) at the top layer; the top layer is a coplanar waveguide feed structure;
the high-impedance surface (1) comprises a first dielectric plate (103) positioned at a bottom layer, a second dielectric plate (104) is arranged at the upper layer of the first dielectric plate (103), a metal backboard (101) is formed on the lower surface of the first dielectric plate (103), a plurality of polygonal fractal metallization patterns (105) which are arranged in an array are formed on the upper surface of the second dielectric plate (104), and each polygonal fractal metallization pattern (105) is connected with the metal backboard (101) through a metallization via hole (102);
the polygonal fractal metallization pattern (105) comprises a hexagonal patch (105-1) positioned at the center, a first discontinuous hexagonal ring (105-2) is formed on the periphery of the hexagonal patch (105-1), a second discontinuous hexagonal ring (105-3) is formed on the periphery of the first discontinuous hexagonal ring (105-2), and the whole structure of the polygonal fractal metallization pattern (105) presents rotational symmetry;
the quasi-complementary resonant structure (2) comprises a third dielectric plate (201), a metallization pattern (210) is formed on the upper surface of the third dielectric plate (201), a fan-shaped notch is formed on one side of the metallization pattern (210), a half-moon shaped patch (202) is formed in the fan-shaped notch, the inner tip of the half-moon shaped patch (202) is in contact with the metallization pattern (210), an L-shaped gap (203), an outer opening annular gap (204) and an inner opening annular gap (205) are formed on the half-moon shaped patch (202), a half-moon shaped window (209) is formed on the metallization pattern (210) symmetrical to the half-moon shaped patch (202), an L-shaped branch (208) is formed in the half-moon shaped window (209) symmetrical to the L-shaped gap (203), an outer opening metal ring (207) is arranged in the half-moon shaped window (209) symmetrical to the outer opening annular gap (204), and an inner opening metal ring (206) is arranged in the half-moon-shaped window (209) symmetrical to the inner opening annular gap (205);
the L-shaped gap (203) is arranged on the outer side of the third dielectric plate (201), the outer opening annular gap (204) and the inner opening annular gap (205) are arranged on the inner side of the third dielectric plate (201), and the inner opening annular gap (205) is arranged in the outer opening annular gap (204);
the feed structure (3) comprises a fourth dielectric plate (301), an 8-shaped opening ring (302) is formed on the fourth dielectric plate (301), a feed line (303) is formed in a notch of the 8-shaped opening ring (302), the inner side end part of the feed line (303) extends to the inside of the 8-shaped opening ring (302), and the outer side end part of the feed line (303) extends to the edge of the fourth dielectric plate (301); in the up-down projection direction, the half-moon shaped patch (202) and the half-moon shaped window (209) are positioned in the 8-shaped opening ring (302).
2. The low profile SWB ultra wideband antenna of claim 1, wherein: the polygonal fractal metallization pattern (105) is provided with 8.
3. The low profile SWB ultra wideband antenna of claim 1, wherein: the outer side of the outer opening annular gap (204) is also sleeved with a plurality of opening annular gaps, and the outer side of the outer opening metal ring (207) is also sleeved with a plurality of opening metal rings.
4. A low profile SWB ultra wideband antenna array, characterized by: the low-profile SWB ultra wideband antenna comprises a plurality of low-profile SWB ultra wideband antennas as claimed in any one of claims 1 to 3, wherein the SWB ultra wideband antennas are arranged in a circumferential shape, a complementary polygonal fractal metallization pattern (401) is formed on the center of a high-impedance surface (4) of the bottom layer of the antenna array, a first circular window (501) is formed on a quasi-complementary resonance structure (5) of the middle layer of the antenna array corresponding to the complementary polygonal fractal metallization pattern (401), and a second circular window (601) is formed on a feed structure (6) of the top layer of the antenna array corresponding to the first circular window (501).
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| US7061442B1 (en) * | 2005-02-05 | 2006-06-13 | Industrial Technology Research Institute | Ultra-wideband antenna |
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| US6091374A (en) * | 1997-09-09 | 2000-07-18 | Time Domain Corporation | Ultra-wideband magnetic antenna |
| CN202121063U (en) * | 2011-04-26 | 2012-01-18 | 肖丙刚 | Ultra wide band microstrip antenna based on complementary split ring resonator for realizing suppressing harmonic wave |
| CN205646136U (en) * | 2015-12-21 | 2016-10-12 | 南京工业大学 | Trapped wave ultra -wideband antenna based on n groove that appears |
| CN113690593B (en) * | 2021-08-27 | 2022-04-01 | 北京星英联微波科技有限责任公司 | High-gain low-profile circularly polarized antenna |
| CN218648140U (en) * | 2022-11-15 | 2023-03-17 | 北京星英联微波科技有限责任公司 | Low-profile SWB ultra-wideband antenna and array thereof |
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