CN218631932U - Process chamber and decoupled plasma nitridation equipment comprising same - Google Patents

Abstract

The utility model discloses a process chamber and decoupling zero plasma equipment of nitrifying including it, wherein this process chamber includes: the device comprises a chamber body, a chamber cover plate, an air inlet device and an air distribution device; the chamber cover plate is covered on the chamber body, and the gas inlet device is arranged on one side of the chamber cover plate, which faces the chamber body, so as to introduce process gas into the chamber body; a carrying platform is arranged at the lower part of the chamber body so as to place the wafer on the carrying platform; the gas distribution device is arranged in the cavity body and positioned between the gas inlet device and the carrying platform, and a gas distribution channel for process gas to flow is arranged at the position of the gas distribution device corresponding to the wafer. The utility model discloses an add the gas distribution device between air inlet unit and microscope carrier for the process gas who places in the surface of the wafer of microscope carrier is more even to flow through.

Description

Process chamber and decoupled plasma nitridation equipment comprising same

Technical Field

The utility model relates to a semiconductor manufacturing technology field especially relates to a process cavity and decoupling zero plasma equipment of nitrifying including it.

Background

At present, in some DPN (Decoupled Plasma Nitridation) devices in the market, a gas inlet device 3 is disposed on a lower surface of a chamber lid 2 (taking a square chamber as an example) to control gas inflow during a process (as shown in fig. 1), and when the gas inlet device 3 is far away from a stage 11 (as shown in fig. 2) or an exhaust opening 7 of a chamber body 1 is designed at a side position of the stage 11 (as shown in fig. 3), process gas is difficult to be uniformly distributed on a surface of a wafer 5 during the process, and a part of the area has high gas concentration, large flow rate and poor process uniformity.

SUMMERY OF THE UTILITY MODEL

The technical problem to be solved in the utility model is to provide a process chamber and decoupling zero plasma nitriding apparatus including it to solve the equipment in service, the unable even problem of distribution on the wafer surface of process gas.

In order to solve the above technical problem, according to the utility model discloses an aspect provides a process chamber, includes: the method comprises the following steps: the device comprises a chamber body, a chamber cover plate, an air inlet device and an air distribution device;

the chamber cover plate is covered on the chamber body, and the gas inlet device is arranged on one side, facing the chamber body, of the chamber cover plate so as to introduce process gas into the chamber body;

a carrying platform is arranged at the bottom of the chamber body, so that a wafer is placed on the carrying platform;

the gas distribution device is arranged in the chamber body and is positioned between the gas inlet device and the carrying platform, and a gas distribution channel for the circulation of the process gas is arranged at the position of the gas distribution device corresponding to the wafer.

In some embodiments, a projected area of the gas distribution channel is greater than or equal to an area of the wafer.

In some embodiments, the gas distribution channel is configured in a circular shape corresponding to the wafer.

In some embodiments, the gas distribution channel is formed by a plurality of gas distribution holes arranged on the gas distribution device.

In some embodiments, the density of the gas distribution holes gradually increases from the center of the gas distribution channel toward the edge of the gas distribution channel.

In some embodiments, the inner wall of the chamber body is provided at its periphery with one or more bosses located between the gas inlet means and the stage, and the gas distribution means is placed on the bosses.

In some embodiments, the process chamber further includes a plurality of support pillars, two ends of each of the plurality of support pillars are respectively connected to the bottom of the chamber body and the gas distribution device, and a height of each of the support pillars is greater than a height of the stage.

In some embodiments, the gas distribution device is a quartz plate.

In some embodiments, the gas distribution device is a quartz plate, and the support column is a quartz column.

According to another aspect of the present invention, there is provided a decoupled plasma nitridation apparatus comprising a process chamber according to any of the above embodiments.

Compared with the prior art, the utility model obvious advantage and beneficial effect have. Borrow by above-mentioned technical scheme, the utility model discloses a process chamber and decoupling zero plasma nitriding apparatus including it can reach considerable technical progress nature and practicality to have the industrial wide use value, it has following advantage at least:

the utility model discloses set up the air inlet unit on the chamber cover board and set up and divided the gas device between the microscope carrier of cavity body bottom for the process gas who gets into the cavity through air inlet unit is through this flow direction and the velocity of flow that divides gas device control process gas, makes process gas distribute evenly on the surface of placing the wafer on the microscope carrier.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented according to the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more obvious and understandable, the following preferred embodiments are described in detail with reference to the accompanying drawings.

Drawings

FIG. 1 illustrates a schematic bottom view of a chamber lid of a prior art process chamber;

FIG. 2 shows a schematic diagram of a prior art process chamber;

FIG. 3 is a schematic diagram showing a top view of the bottom of a chamber body according to the prior art;

FIG. 4 illustrates a schematic structural view of a process chamber according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of a gas distributor according to an embodiment of the present invention;

fig. 6 shows a schematic structural diagram of the supporting column according to an embodiment of the present invention.

[ notation ] to show

1: chamber body

11: carrying platform

2: chamber cover plate

3: air intake device

4: gas distribution device

41: gas distribution channel

411: air distributing hole

5: wafer

6: support column

7: air extraction opening

Detailed Description

To further illustrate the present invention, the following detailed description of an inductively coupled plasma device and a semiconductor thin film device according to the present invention will be made with reference to the accompanying drawings.

The utility model discloses an add the branch gas device between air inlet unit and microscope carrier, guide process gas through this branch gas device to the realization is to the secondary control of gas flow direction, makes the tolerance on the wafer surface of flowing through increase and distribute more evenly among the process, thereby improves the homogeneity of technology.

Based on this, the embodiment of the present invention provides a process chamber, as shown in fig. 4, the process chamber includes a chamber body 1, a chamber cover plate 2, an air inlet device 3, and an air distribution device 4.

Wherein, the bottom of the chamber body 1 is provided with a stage 11, so that the wafer 5 is carried by the stage 11. The chamber cover 2 covers the chamber body 1, and the air inlet device 3 is arranged on the side of the chamber cover 2 facing the chamber body 1. The process gas is injected into the chamber body 1 through the gas inlet unit 3, and the wafer 5 placed on the stage 11 is nitrided.

The gas distribution device 4 is arranged in the chamber body 1 and is positioned between the gas inlet device 3 and the carrying platform 11. The process chamber is divided into an upper part and a lower part by the gas distribution device 4, and after the process gas flows into the chamber body 1 through the gas inlet device 3, the process gas is firstly positioned at the upper part of the process chamber and then flows into the lower part of the process chamber after the flow direction of the process gas is secondarily controlled by the gas distribution device 4.

In order to control the flow rate and the flow direction of the process gas, so that more process gas flows across the surface of the wafer 5 placed on the stage 11, and the process gas on the surface of the wafer 5 is more uniformly distributed, a gas distribution channel 41 through which the process gas flows is provided at a position corresponding to the wafer 5 on the gas distribution device 4.

In one embodiment, the projected area of the gas distribution channel 41 disposed on the gas distribution device 4 is greater than or equal to the area of the wafer 5, so as to ensure that the process gas flowing into the lower portion of the process chamber through the gas distribution channel 41 can cover the entire surface of the wafer 5.

In one embodiment, as shown in fig. 5, the wafer 5 is generally circular in structure, and the gas distribution channel 41 of the gas distribution device 4 is also circular in shape in order to achieve better coverage of the wafer 5.

Further, as shown in fig. 5, the air distribution passage 41 provided in the air distribution device 4 is formed by a plurality of air distribution holes 411. By providing the plurality of gas distribution holes 411, the process gas can be more uniformly distributed on the surface of the wafer 5.

In one embodiment, as shown in fig. 5, the density of the gas distribution holes 411 gradually increases from the center of the gas distribution channel 41 toward the staging edge. That is, the density of the gas distribution holes 411 at the center of the gas distribution passage 41 is low, and the density of the gas distribution holes 411 at the edge of the gas distribution passage 41 is higher than that of the gas distribution holes 411 at the center of the gas distribution passage 41. By limiting the density of the gas distribution holes 411, the process gas flowing over the surface of the wafer 5 can be further made more uniform.

In one embodiment, one or more bosses (not shown) are provided on the periphery of the inner wall of the chamber body 1, between the gas inlet device 3 and the stage 11, on which the gas distribution device 4 is placed.

When the number of the bosses is one, the bosses have an annular structure. When the boss is a plurality of, a plurality of bosses are even to be set up on the inside wall of cavity body 1, and a plurality of bosses are located the coplanar to guarantee to place the stability of the branch gas device 4 on the boss.

In another embodiment, as shown in fig. 4 and 6, the process chamber comprises a plurality of support columns 6, and both ends of the plurality of support columns 6 are respectively connected to the bottom of the chamber body 1 and the gas distribution device 4 to support and position the gas distribution device 4. The height of the plurality of support columns 6 is greater than the height of the stage 11 to prevent the wafer 5 from being placed on the stage 11 without being smooth.

One end of the supporting column 6 can be fixedly connected to the bottom of the chamber body 1 by means of bonding, splicing or the like, and the other end of the supporting column 6 can be connected to the gas distribution device 4 by means of splicing or threaded connection. Preferably, the supporting column 6 is connected to the gas distribution device 4 by a screw connection, so that the gas distribution device 4 can be disassembled and assembled more conveniently for cleaning and maintenance of the process chamber. Of course, the above-mentioned connection manner is only a specific example of the connection manner of the supporting pillar 6, and is not used to limit the connection manner of the present invention.

In an embodiment, the gas distribution device 4 is a plate-shaped structure, and preferably, the gas distribution device 4 is made of quartz, so that the material of the gas distribution device 4 is the same as that of the chamber body 1, thereby preventing particle impurities from generating in the process and affecting the yield of the nitridation of the wafer 5.

When the support column 6 is used to support and position the gas-separation device 4, the support column 6 is also made of quartz.

The embodiment of the utility model provides a decoupling zero plasma nitrogenize equipment is still provided, including the inductively coupled plasma device of any one of above-mentioned embodiments.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and although the present invention has been disclosed with reference to the preferred embodiment, it is not intended to limit the present invention, and any person skilled in the art can make some changes or modifications to equivalent embodiments without departing from the scope of the present invention, and any simple modification, equivalent change and modification made to the above embodiments by the technical essence of the present invention will still fall within the scope of the technical solution of the present invention.

Claims (8)

1. A process chamber, comprising: the device comprises a chamber body, a chamber cover plate, an air inlet device and an air distribution device;

the chamber cover plate is covered on the chamber body, and the gas inlet device is arranged on one side, facing the chamber body, of the chamber cover plate so as to introduce process gas into the chamber body;

a carrying platform is arranged at the bottom of the chamber body, so that a wafer is placed on the carrying platform;

the gas distribution device is arranged in the chamber body and positioned between the gas inlet device and the carrying platform, and a gas distribution channel for the circulation of the process gas is arranged at the position of the gas distribution device corresponding to the wafer;

the gas distribution channel is composed of a plurality of gas distribution holes arranged on the gas distribution device, and the density of the gas distribution holes is gradually increased from the center of the gas distribution channel to the edge of the gas distribution channel.

2. The process chamber of claim 1, wherein a projected area of the gas distribution channel is greater than or equal to an area of the wafer.

3. The process chamber of claim 1, wherein the gas distribution channel is configured in a circular shape corresponding to the wafer.

4. The process chamber of claim 1, wherein the inner wall of the chamber body is provided at a periphery with one or more bosses located between the gas inlet device and the stage, the gas distribution device being placed on the bosses.

5. The process chamber of claim 1, further comprising a plurality of support pillars having two ends respectively connected to the bottom of the chamber body and the gas distribution device, wherein the height of the support pillars is greater than the height of the stage.

6. The process chamber of claim 4, wherein the gas distribution device is a quartz plate.

7. The process chamber of claim 5, wherein the gas distribution device is a quartz plate and the support columns are quartz columns.

8. A decoupled plasma nitridation apparatus, comprising the process chamber of any one of claims 1-7.

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