CN218628721U

CN218628721U - Intelligent film sensor

Info

Publication number: CN218628721U
Application number: CN202222821136.1U
Authority: CN
Inventors: 蒋家新; 蒋巍巍; 肖宇; 尹汪宏; 程雪芳; 宋建
Original assignee: Bengbu Dingli Electronic Technology Co ltd
Current assignee: Bengbu Dingli Electronic Technology Co ltd
Priority date: 2022-10-24
Filing date: 2022-10-24
Publication date: 2023-03-14
Anticipated expiration: 2032-10-24

Abstract

The utility model relates to an intelligence film sensor, it is including being used for gathering pressure and with pressure conversion for the induction mechanism of signal of telecommunication output, the signal processing mechanism who is used for the signal of telecommunication output to turn into digital signal and for the electrical power generating mechanism of induction mechanism and signal processing mechanism power supply, wherein, induction mechanism includes monocrystalline silicon attachment ring, suit at the elastic ferrite magnet of monocrystalline silicon attachment ring central authorities, buries basic coil, excitation winding and the measurement winding on the monocrystalline silicon attachment ring underground, the electric coupling between measurement winding and the excitation winding. The intelligent film sensor keeps low cost and high precision, utilizes the piezomagnetic effect to convert the magnetic permeability change of the ferromagnetic elastic sheet caused by external force into the change of the coupling coefficient between the excitation winding and the test winding, and outputs the change in the form of potential change, thereby eliminating the influence of resistance selection on the requirement of large driving current or external electromagnetic interference on the operation stability.

Description

Intelligent film sensor

Technical Field

The utility model relates to an intelligence film sensor field, concretely relates to intelligence film sensor.

Background

The pressure sensor is the most commonly used sensor in industrial practice, is widely applied to various industrial automatic control environments, relates to various industries such as water conservancy and hydropower, railway traffic, intelligent buildings, production automatic control, aerospace, military industry, petrifaction, oil wells, electric power, ships, machine tools, pipelines and the like, and has a plurality of types of commonly used sensor strain gauge pressure sensors, such as a resistance strain gauge pressure sensor, a semiconductor strain gauge pressure sensor, a piezoresistive pressure sensor, an inductive pressure sensor, a capacitive pressure sensor, a resonant pressure sensor, a capacitive acceleration sensor and the like. Among them, the piezoresistive pressure sensor has been recently used because of its relatively low cost and high accuracy. However, if the resistance value of the piezoresistive pressure sensor is too small, the required driving current is too large, meanwhile, the temperature of the piezoresistive pressure sensor is too high due to the heating of the strain gauge, the resistance value of the strain gauge used in different environments changes too much, the output zero point can drift obviously, the zero adjusting circuit is too complex to be additionally arranged, and if the resistance value is too large, the impedance is too high, and the external electromagnetic interference resistance is obviously reduced.

SUMMERY OF THE UTILITY MODEL

The to-be-solved technical problem of the utility model is: the intelligent thin film sensor overcomes the defects of high power consumption, poor stability and reduced external electromagnetic interference resistance caused by large driving current due to resistance selection of the existing piezoresistive pressure sensor, and utilizes the piezomagnetic effect to convert the magnetic permeability change of the ferromagnetic elastic sheet caused by external force into the change of the coupling coefficient between excitation and test windings while keeping low cost and high precision, and outputs the change in the form of potential change to eliminate the influence of resistance selection on the requirement of large driving current or external electromagnetic interference on the operation stability.

This intelligence film sensor is including being used for gathering pressure and with pressure conversion to the induction mechanism of signal of telecommunication output, the signal processing mechanism who is used for the signal of telecommunication output to turn into digital signal and for the power supply mechanism of induction mechanism and signal processing mechanism power supply, wherein, induction mechanism includes that monocrystalline silicon adheres to ring, suit at the elastic ferromagnet of monocrystalline silicon adhering to ring central authorities, buries basic coil, excitation winding and the measurement winding on monocrystalline silicon adhering to the ring underground, measure electric coupling between winding and the excitation winding. When external force acts on the elastic ferromagnet, the magnetic permeability of the elastic ferromagnet changes, so that the inductance and the impedance of the base coil change, the change of the magnetic permeability leads to the change of the coupling coefficient between the windings, and further the potential output by the measuring winding changes.

Furthermore, the signal processing mechanism comprises a processing chip, a power conversion chip and a voltage reduction inversion module. After the potential change is input into the signal processing mechanism, the processing chip converts the potential change difference into a digital signal according to the potential change difference and outputs the digital signal to the external display device.

Further, the power supply mechanism supplies DC5V, and after the voltage is reduced by the power conversion chip and the voltage reduction inversion module and is converted into DC3.3V and AC1.5V, the power supply mechanism supplies power to the processing chip and the base coil respectively.

Specifically, the processing chip adopts an AT89S52 singlechip.

Specifically, the power conversion chip adopts an XL1506 voltage reduction and stabilization module.

The utility model relates to an intelligence film sensor, it leads to the consumption height greatly to have overcome current piezoresistive pressure sensor because of the drive current that the resistance selection brought, poor stability, and the electromagnetic interference ability of anti external world descends not enough, it is when keeping low cost and high accuracy, utilize the piezomagnetic effect, lead to ferromagnetic elastic piece magnetic permeability change to the excitation with external force, the change of the coupling coefficient between the test winding, and with the form output that the electric potential changes, get rid of the resistance and select requirement or external electromagnetic interference to operational stability's influence.

Drawings

The following describes the intelligent thin film sensor of the present invention with reference to the accompanying drawings:

FIG. 1 is a schematic plan view of the present intelligent thin film sensor;

FIG. 2 is a schematic bottom view of the structure of FIG. 1

FIG. 3 is a block diagram of the logical structure of the present intelligent thin film sensor.

In the figure:

1-an induction mechanism, 2-a signal processing mechanism and 3-a power supply mechanism;

11-monocrystalline silicon attachment ring, 12-elastic ferromagnet; 21-processing chip, 22-power conversion chip, 23-voltage reduction inversion module;

111-base coil, 112-excitation winding, 113-measurement winding.

Detailed Description

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the description of the present invention, it is to be understood that the terms "left", "right", "front", "back", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, and are used merely for convenience of description and simplification of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.

The technical solution of the present invention is further described below with specific examples, but the scope of the present invention is not limited to the following examples.

Embodiment 1: as shown in fig. 1 to 3, the intelligent thin film sensor includes an induction mechanism 1 for collecting pressure and converting the pressure into an electric signal to be output, a signal processing mechanism 2 for converting the electric signal output by the induction mechanism into a digital signal, and a power supply mechanism 3 for supplying power to the induction mechanism 1 and the signal processing mechanism 2, wherein the induction mechanism 1 includes a monocrystalline silicon attachment ring 11, an elastic ferromagnetic body 12 sleeved in the center of the monocrystalline silicon attachment ring 11, a base coil 111, an excitation winding 112, and a measurement winding 113 embedded in the monocrystalline silicon attachment ring 11, and the measurement winding 113 is electrically coupled with the excitation winding 112. When external force acts on the elastic ferromagnet, the magnetic permeability of the elastic ferromagnet changes, so that the inductance and the impedance of the base coil change, the change of the magnetic permeability causes the change of the coupling coefficient among the windings, and further the electric potential output by the measuring winding changes.

Embodiment 2: as shown in fig. 3, the signal processing mechanism 2 of the intelligent film sensor includes a processing chip 21, a power conversion chip 22 and a step-down inverter module 23. After the potential change is input into the signal processing mechanism, the processing chip converts the potential change difference into a digital signal according to the potential change difference and outputs the digital signal to the external display device. The remaining structure and components are as described in embodiment 1, and the description will not be repeated.

Embodiment 3: the power supply mechanism 3 of the intelligent film sensor supplies DC5V, reduces the voltage through the power supply conversion chip 22 and the voltage reduction inversion module 23, converts the voltage into DC3.3V and AC1.5V, and then respectively supplies power to the processing chip 21 and the base coil 111. The remaining structure and components are as described in embodiment mode 1, and the description is not repeated.

Embodiment 4: the processing chip 21 adopts an AT89S52 singlechip. The power conversion chip 22 adopts an XL1506 voltage reduction and stabilization module. The remaining structure and components are as described in embodiment 1, and the description will not be repeated.

The intelligent thin film sensor overcomes the defects of high power consumption, poor stability and reduction of external electromagnetic interference resistance caused by large driving current due to resistance selection of the existing piezoresistive pressure sensor, and changes of the magnetic permeability of the ferromagnetic elastic sheet caused by external force are converted into changes of coupling coefficients between excitation and test windings by using a piezomagnetic effect while keeping low cost and high precision, and the changes are output in a potential change mode, so that the influence of resistance selection on the requirement of large driving current or external electromagnetic interference on operation stability is eliminated.

The above description shows the main features, the basic principles, and the advantages of the invention. It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments or examples, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The foregoing embodiments or examples are therefore to be considered in all respects illustrative and not restrictive. The scope of the invention is indicated by the appended claims rather than by the foregoing description, and all changes that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.

Claims

1. An intelligent thin film sensor, characterized by: comprises an induction mechanism (1) for acquiring pressure and converting the pressure into an electric signal to be output, a signal processing mechanism (2) for converting the electric signal output by the induction mechanism into a digital signal, and a power supply mechanism (3) for supplying power to the induction mechanism (1) and the signal processing mechanism (2), wherein,

the induction mechanism (1) comprises a monocrystalline silicon attachment ring (11), an elastic ferromagnetic body (12) sleeved in the center of the monocrystalline silicon attachment ring (11), a base coil (111), an excitation winding (112) and a measurement winding (113) which are embedded in the monocrystalline silicon attachment ring (11), wherein the measurement winding (113) is electrically coupled with the excitation winding (112).

2. The intelligent thin film sensor of claim 1, wherein: the signal processing mechanism (2) comprises a processing chip (21), a power supply conversion chip (22) and a voltage reduction and inversion module (23).

3. The intelligent thin film sensor of claim 2, wherein: the power supply mechanism (3) supplies DC5V, reduces the voltage through the power conversion chip (22) and the voltage reduction inversion module (23), converts the voltage into DC3.3V and AC3V, and then respectively supplies power to the processing chip (21) and the base coil (111).

4. The intelligent film sensor of claim 3, wherein: the processing chip (21) adopts an AT89S52 singlechip.

5. The intelligent thin film sensor of claim 4, wherein: and the power supply conversion chip (22) adopts an XL1506 voltage reduction and stabilization module.