CN218596492U - Magnetron sputtering device - Google Patents
Magnetron sputtering device Download PDFInfo
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- CN218596492U CN218596492U CN202222557086.0U CN202222557086U CN218596492U CN 218596492 U CN218596492 U CN 218596492U CN 202222557086 U CN202222557086 U CN 202222557086U CN 218596492 U CN218596492 U CN 218596492U
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- sputtering
- unit
- magnetron sputtering
- shell
- targets
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 25
- 238000004544 sputter deposition Methods 0.000 claims abstract description 39
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052786 argon Inorganic materials 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 239000000110 cooling liquid Substances 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 229920000459 Nitrile rubber Polymers 0.000 claims description 3
- 150000001993 dienes Chemical class 0.000 claims description 3
- 229920000582 polyisocyanurate Polymers 0.000 claims description 3
- 239000011495 polyisocyanurate Substances 0.000 claims description 3
- 238000005422 blasting Methods 0.000 claims description 2
- NTXGQCSETZTARF-UHFFFAOYSA-N buta-1,3-diene;prop-2-enenitrile Chemical compound C=CC=C.C=CC#N NTXGQCSETZTARF-UHFFFAOYSA-N 0.000 claims description 2
- 229920001971 elastomer Polymers 0.000 claims description 2
- 239000013077 target material Substances 0.000 abstract description 12
- 238000002955 isolation Methods 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 description 16
- 239000011248 coating agent Substances 0.000 description 15
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000002131 composite material Substances 0.000 description 5
- 238000004804 winding Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000002826 coolant Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000002775 capsule Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
The utility model discloses a magnetron sputtering device, including shell, sputtering home roll and a plurality of unit room set up in the shell, and a plurality of unit room encircle at sputtering home roll periphery, the unit room includes the isolation shell, sets up at inside a plurality of targets of isolation shell and argon gas branch pipe, the isolation shell orientation the side of sputtering home roll is provided with fretwork sputtering district. Compared with the prior art, the beneficial effects of the utility model are that: particles emitted by the target material in the unit chamber pass through the hollow sputtering area of the isolation shell and move towards the sputtering main roller, and the target material in other unit chambers cannot be polluted. Can effectively isolate the pollution between the targets in different unit chambers and increase the diversity of the process.
Description
Technical Field
The utility model relates to a magnetron sputtering device especially relates to and is used for unit room of sputtering, belongs to the complex mass flow body processing equipment field.
Background
The magnetron sputtering is an important one-step process in the manufacturing process of the composite current collector, and the design of a magnetron sputtering device is particularly important. At present, in most magnetron sputtering devices on the market, a plurality of targets are not isolated, and the targets share one argon branch pipe. Although the structure is simple, the defects exist, the target materials are communicated with each other, and pollutants are easily spread among different target materials, so that more target materials are polluted. Therefore, how to avoid the spreading of contaminants between different targets is a technical problem that needs to be solved by those skilled in the art.
SUMMERY OF THE UTILITY MODEL
In order to overcome the above disadvantages, the present invention provides a magnetron sputtering apparatus. To solve the problems mentioned in the background section.
In order to achieve the above purpose, the utility model discloses a technical scheme is: the utility model provides a magnetron sputtering device, includes shell, sputtering home roll and a plurality of unit room, and sputtering home roll and a plurality of unit room set up in the shell, and a plurality of unit room encircle at the sputtering home roll periphery, its characterized in that, the unit room includes the shield shell, sets up at inside a plurality of targets of shield shell and argon gas branch pipe, the unit room orientation the side of sputtering home roll is provided with fretwork sputtering area.
In order to prevent that the isolation shell from interfering with the sputtering main roller, hindering the coating film to transmit on the sputtering main roller, the utility model discloses further setting up to: and a gap of 3-10mm is formed between the hollow sputtering area and the sputtering main roller.
For the indoor pressure of control unit, the utility model discloses further setting up is: a cooling assembly is arranged on the inner wall of the unit chamber, an air suction opening is formed in the middle of the cooling assembly, and the air suction opening is connected with an air suction pump; the cooling assembly comprises a coil pipe made of a cryogenic pipe material, one end of the coil pipe is a cooling liquid inlet, and the other end of the coil pipe is a cooling liquid outlet.
The utility model discloses further setting up to: and a pressure sensor is arranged in the unit chamber.
In order to catch the indoor vapor of unit, the utility model discloses further setting up to: and a cooling device is arranged in the unit chamber.
The utility model discloses further set up to: the cooling device is a coil made of a deep cooling pipe material, one end of the coil is a cooling liquid inlet, and the other end of the coil is a cooling liquid outlet.
The utility model discloses further setting up to: the material of the cryogenic pipe is one of butadiene-acrylonitrile rubber polymer, diene polymer and polyisocyanurate.
For the protection unit room, the utility model discloses further setting up to: the inner surface of the unit chamber is made of a sand blasting material.
In order to make the magnetron sputtering device process out the product of different specifications, the utility model discloses further setting up to: the magnetron sputtering device also comprises a direct current power supply, a medium frequency power supply or a radio frequency power supply with the power range of 5-30 KW. Different types of power supplies enable the magnetron sputtering device to have various processing technologies.
The utility model discloses further setting up to: the number of the targets in the unit chamber is 1-3.
Compared with the prior art, the beneficial effects of the utility model are that: particles emitted by the target material in the unit chamber pass through the hollow sputtering area of the isolation shell and move towards the sputtering main roller, so that the target material in other unit chambers cannot be polluted. Can effectively isolate the pollution between the targets in different unit chambers.
The air pressure in each unit chamber is adjustable, and more refined and more diversified control of the production process is realized. For example, when the surface of the polymer base film is coated at the beginning, the bonding force between the polymer base film and the metal coating is different from the bonding force between the metal coating and the metal coating when the metal coating after the later-stage coating enters another unit chamber for coating; in addition, although the film is cooled after being coated, the film still needs to consider factors such as temperature when entering the next unit chamber for coating, and the air pressure in the unit chamber needs to be controlled.
Drawings
Fig. 1 is a schematic structural diagram of a magnetron sputtering apparatus according to a preferred embodiment of the present invention;
fig. 2 is a schematic sectional structure view of the unit cell.
In the figure: 1. sputtering a main roller; 2. a winding mechanism; 3. an unwinding mechanism; 4. coating; 5. passing through a roller; 6. a target material; 7. a unit cell; 8. an argon branch pipe; 9. flattening rollers; 10. an air suction opening; 11. a housing; 12. a coolant inlet; 13. a coolant outlet; 14. a hollow sputtering area; 15. an isolation shell; 17. a pressure sensor; 19. a discharge port; 20. and (4) feeding a material inlet.
Detailed Description
The following detailed description of the preferred embodiments of the invention, taken in conjunction with the accompanying drawings, enables those skilled in the art to more readily understand the advantages and features of the invention.
Example 1:
referring to fig. 1-2, the magnetron sputtering apparatus in this embodiment includes a housing 11, a sputtering main roller 1 and a plurality of unit chambers 7, wherein two ends of the sputtering main roller are rotatably connected to left and right side walls of the housing 11, and the unit chambers are fixedly connected to the housing 11; the unit chambers 7 are fixedly connected in an inner cavity of the shell 11 and surround the periphery of the sputtering main roller 1, each unit chamber 7 comprises an isolation shell 15, a plurality of targets 6 and an argon branch pipe 8, the targets 6 and the argon branch pipes are arranged in the isolation shell 15, and a hollowed-out sputtering area is arranged on the side face, facing the sputtering main roller 1, of the isolation shell 15. A gap of 3-10mm is formed between the hollow sputtering area and the sputtering main roller 1. A cooling assembly is arranged on the inner wall of the unit chamber 7, a suction opening 10 is arranged in the middle of the cooling assembly, and the suction opening 10 is connected with a suction pump; the cooling assembly comprises a coil made of a cryogenic pipe material, one end of the coil is provided with a cooling liquid inlet 12, and the other end of the coil is provided with a cooling liquid outlet 13. The material of the deep cooling pipe is one of nitrile rubber polymer, diene polymer and polyisocyanurate. The internal surface of the unit chamber 7 is made of a sandblasting material.
The magnetron sputtering device also comprises a direct current power supply, a medium frequency power supply or a radio frequency power supply with the power range of 5-30 KW. The number of the targets 6 in the unit chamber 7 is 1-3.
The housing 11 has a discharge opening 19 and a feed opening 20. The magnetron sputtering device further comprises an unwinding mechanism 3, a coating film 4, a passing roller 5, a feeding hole 20, a flattening roller 9, a sputtering main roller, a discharging hole 19 and a winding mechanism 2, wherein the coating film 4 sequentially passes through the passing roller 5, the flattening roller 9 and the sputtering main roller 1 from the unwinding mechanism 3 through the traction of the winding mechanism 2.
To sum up, the principle of the magnetron sputtering device of the utility model is as follows: the direct current power supply, the intermediate frequency power supply or the radio frequency power supply are electrically connected with the target 6, and particles emitted by the target 6 pass through the hollow sputtering area 14 of the isolation shell 15 and move towards the sputtering main roller 1 to be attached to the coating 4. The particles in the unit cell 7 cannot contaminate the target 6 in the other unit cell 7. The targets 6 in the different unit cells 7 can be effectively isolated from each other. The pressure in the unit cell 7 can be controlled by evacuating the cell by a vacuum pump. The air pressure in the cell 7 is known by the pressure sensor 17. The moisture content of the gas in the unit chamber 7 is eliminated by the cooling device, specifically, the water vapor is condensed into liquid when meeting the condensation, and the moisture content in the gas is reduced. The unit cell 7 can be protected by the inner surface of the unit cell 7 made of the blasting material, and different types of power supplies are electrically connected to the targets 6 in the different unit cells 7, respectively. Provides diversified processing techniques.
Example 2:
it differs from example 1 in that: the unit chambers comprise a first unit chamber, a second unit chamber, a third unit chamber and a fourth unit chamber, wherein 2 nickel targets are adopted in the first unit chamber, copper targets are adopted in the other unit chambers, and a 30KW direct current power supply is adopted. Penetrating the coating film according to a winding path, setting a normal cooling temperature and a deep cooling temperature after starting vacuumizing, and controlling the air pressure of all unit chambers to be 8 × 10 -3 Thereafter, the pressure of each unit cell was adjusted by adjusting the flow rate of argon gas. Air pressure control 4 x 10 in one-unit chamber and two-unit chamber -2 The air pressure of the three-unit chamber and the four-unit chamber is controlled to 5 x 10 -1 . The lower the gas pressure, the higher the adhesion between the plated film and the metal to be plated, but the lower the argon flow rate will cause the reduction of sputtering efficiency, so the argon is properly reduced in the first unit chamber and the second unit chamberThe air flow is ensured to ensure the binding force among different coatings. The three-four unit is made of single metal, so that the binding force between the same substances is better, and the argon is properly promoted to improve the efficiency. After the air pressure is stable, winding at a set speed, and then starting the target power supply to plate the film at a set power.
The detailed process parameters of the experiment are as follows:
background vacuum: 8*10 -3 Pa, normal cooling temperature: -10 ℃, cryogenic temperature: the linear velocity is 10m/min at-120 ℃.
And (3) testing the adhesive force: 3-4 circles of the expanded and processed composite current collector are used as a sample, the size of the sample is 2 x 15cm, the sample is uniformly pasted on a steel plate by using a textured adhesive under the condition of room temperature and normal pressure, then a measured composite copper film is uniformly pasted on a double-faced adhesive, then a 2Kg standard small compression roller is used for extruding back and forth once, and then the pressed sample is taken on a tensile machine to be stretched at 180 degrees at the speed of 50mm/min.
The bonding force is more than or equal to 120N/m through the test of a tensile machine; no material was shed and adhered by the masking tape test.
Example 3:
example 3 differs from example 2 in that: the coating capsule body in the prior art is used, the 1/2 th target material after coating is a nickel target material, and the No. 3-6 target material is a copper target material.
And (3) testing the adhesive force: 3-4 circles of the expanded and processed composite current collector are used as a sample, the size of the sample is 2 x 15cm, the sample is uniformly pasted on a steel plate by using a textured adhesive under the condition of room temperature and normal pressure, then a measured composite copper film is uniformly pasted on a double-faced adhesive, then a 2Kg standard small compression roller is used for extruding back and forth once, and then the pressed sample is taken on a tensile machine to be stretched at 180 degrees at the speed of 50mm/min.
The bonding force is more than or equal to 120N/m through the test of a tensile machine; no matter was detached and adhered by the masking tape test.
The above embodiments are only for illustrating the technical concept and features of the present invention, and the purpose of the above embodiments is to let the person skilled in the art understand the contents of the present invention and implement the present invention, which can not limit the protection scope of the present invention, and all equivalent changes or modifications made according to the spirit of the present invention should be covered in the protection scope of the present invention.
Claims (8)
1. The utility model provides a magnetron sputtering device, includes shell, sputtering main roll and a plurality of unit room, and sputtering main roll and a plurality of unit room set up in the shell, and a plurality of unit room encircle at sputtering main roll periphery, its characterized in that, the unit room includes the shield shell, sets up at inside a plurality of targets of shield shell and argon gas branch pipe, and the unit room orientation the side of sputtering main roll is provided with fretwork sputtering district.
2. The magnetron sputtering apparatus according to claim 1, wherein a gap of 3-10mm is formed between the hollowed sputtering area and the sputtering main roller.
3. The magnetron sputtering device according to claim 2, wherein a cooling module is arranged on the inner wall of the unit chamber, an air suction opening is arranged in the middle of the cooling module, and the air suction opening is connected with an air suction pump; the cooling assembly comprises a coil pipe made of a cryogenic pipe material, one end of the coil pipe is a cooling liquid inlet, and the other end of the coil pipe is a cooling liquid outlet.
4. The magnetron sputtering apparatus according to claim 3 wherein a pressure sensor is provided in the unit chamber.
5. The magnetron sputtering apparatus according to claim 4, wherein the material of the cryogenic pipe is one of butadiene-acrylonitrile rubber polymer, diene polymer and polyisocyanurate.
6. The magnetron sputtering apparatus according to claim 5, wherein the inner surface of the unit cell is made of a blasting material.
7. The magnetron sputtering apparatus according to claim 6, further comprising a direct current power supply, an intermediate frequency power supply or a radio frequency power supply having a power range of 5-30 KW.
8. The magnetron sputtering apparatus according to claim 1, wherein the number of targets in the unit chamber is 1 to 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222557086.0U CN218596492U (en) | 2022-09-26 | 2022-09-26 | Magnetron sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222557086.0U CN218596492U (en) | 2022-09-26 | 2022-09-26 | Magnetron sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218596492U true CN218596492U (en) | 2023-03-10 |
Family
ID=85400389
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222557086.0U Active CN218596492U (en) | 2022-09-26 | 2022-09-26 | Magnetron sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218596492U (en) |
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2022
- 2022-09-26 CN CN202222557086.0U patent/CN218596492U/en active Active
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