CN218513422U - Lighting device with high uniformity for semiconductor surface inspection - Google Patents
Lighting device with high uniformity for semiconductor surface inspection Download PDFInfo
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- CN218513422U CN218513422U CN202222776807.7U CN202222776807U CN218513422U CN 218513422 U CN218513422 U CN 218513422U CN 202222776807 U CN202222776807 U CN 202222776807U CN 218513422 U CN218513422 U CN 218513422U
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Abstract
The utility model provides a lighting device with high uniformity for semiconductor surface detection, which belongs to the field of wafer detection and comprises a light source, an attenuation component, a dodging component, a filtering component, a light spot adjusting component, a reflecting component and a cone mirror component; the light spot adjusting assembly is used for adjusting the light beam after the light uniformization and filtration into a preset light spot size and a preset light spot shape, and the light source, the attenuation assembly, the light uniformization assembly, the light filtering assembly and the light spot adjusting assembly are sequentially arranged, coaxial and collinear and form a first light path; the reflecting component is positioned at the tail end of the first light path; the barrel mirror assembly is used for receiving the light beam reflected by the reflection assembly, the reflection assembly and the barrel mirror assembly form a second light path, the second light path is perpendicular to the first light path, and the light beam of the second light path is emitted out under the action of the barrel mirror assembly and irradiates the surface of the wafer. The illumination device enables the wafer to be detected to have an illumination environment which is uniform and high in illumination intensity, the resolution ratio of the image on the surface of the wafer is improved, and the detection precision of the wafer is further improved.
Description
Technical Field
The utility model relates to a wafer detects the field, especially relates to a lighting device that is used for semiconductor surface to detect with high homogeneity.
Background
In the semiconductor industry, due to the characteristics of complex process, multiple working procedures, small device size and the like, defects of wafers are easily caused in the production process. These defects not only seriously affect the chip performance, but also cause increased costs. Therefore, the inspection process is critical in various processes of semiconductor production.
Clear high-resolution images are the primary condition for ensuring the accuracy of defect detection classification, and an illumination device is particularly important in the detection process, so that how to obtain a better illumination environment for the wafer to be detected is urgent to solve.
SUMMERY OF THE UTILITY MODEL
In view of the above, an object of the present invention is to provide an illumination device for semiconductor surface inspection with high uniformity and better illumination environment.
In order to solve the technical problem, the utility model discloses a following technical scheme:
according to the utility model discloses a lighting device for semiconductor surface detects with high homogeneity, lighting device includes:
a light source;
an attenuation component for attenuating energy of light emitted by the light source;
the dodging assembly is used for dodging the light beams filtered by the attenuation assembly;
the light filtering component is used for filtering the homogenized light beam;
the light spot adjusting assembly is used for adjusting the light beam subjected to light uniformizing and filtering into a preset light spot size and a preset light spot shape, the light source, the attenuation assembly, the light uniformizing assembly, the filtering assembly and the light spot adjusting assembly are sequentially arranged and coaxially collinear, and the light beam passes through the light source, the attenuation assembly, the light uniformizing assembly, the filtering assembly and the light spot adjusting assembly to form a first light path;
the reflecting component is positioned at the tail end of the first optical path and is used for reflecting the light beam in the first optical path;
and the barrel mirror assembly is used for receiving the light beam reflected by the reflecting assembly, the reflecting assembly and the barrel mirror assembly form a second light path, the second light path is perpendicular to the first light path, and the light beam of the second light path is emitted under the action of the barrel mirror assembly and irradiates the surface of the wafer.
Further, the light spot adjusting assembly comprises a light spot size adjusting piece and a light spot shape adjusting piece, and the light spot size adjusting piece and the light spot shape adjusting piece are sequentially arranged along the first light path.
Further, the lighting device further includes:
and the lenses are positioned between the light spot adjusting assembly and the light filtering assembly and positioned on the first light path.
Further, the spot shape adjusting member includes a field stop.
Further, the barrel mirror assembly comprises a dichroic mirror, the light beam reflected by the reflecting assembly is separated after passing through the dichroic mirror, the separated light beam irradiates the surface of the wafer and forms a third light path, and the third light path is perpendicular to the second light path.
Further, the lighting device further includes:
the objective lens is connected with the cylindrical lens component, the objective lens is positioned below the cylindrical lens component and positioned above the wafer to be detected, and the light beams are separated to the objective lens after passing through the dichroic mirror and irradiate the surface of the wafer.
Further, the lighting device further includes:
a cooling assembly mounted on the light source and used for cooling the light source.
Further, the light source is a xenon lamp.
Further, the dodging assembly comprises a micro lens array.
The above technical scheme of the utility model one of following beneficial effect has at least:
the utility model discloses a lighting device for semiconductor surface detects with high homogeneity, this lighting device utilize light source, decay subassembly, even light subassembly, filtering component, facula adjusting part, reflection assembly and barrel mirror subassembly to make and wait to detect the illumination environment that the wafer can have comparatively even, illumination intensity is strong, improves the resolution ratio of acquireing wafer surface image, further improves the detection precision of wafer.
Drawings
Fig. 1 is a schematic overall structural diagram of an illumination device for semiconductor surface inspection with high uniformity according to an embodiment of the present invention;
fig. 2 is a schematic top view light path diagram of an illumination device for semiconductor surface inspection with high uniformity according to an embodiment of the present invention.
Reference numerals:
a. a first optical path; b. a second optical path;
10. a light source; 11. an attenuation component; 12. a light homogenizing assembly; 13. a filter assembly; 14. a spot size adjusting member; 15. a spot shape adjusting member; 16. a reflective component; 17. a barrel lens assembly; 18. an objective lens; 19. a camera.
Detailed Description
In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the drawings of the embodiments of the present invention are combined below to clearly and completely describe the technical solution of the embodiments of the present invention. It is to be understood that the embodiments described are only some of the embodiments of the present invention, and not all of them. All other embodiments, which can be derived from the description of the embodiments of the present invention by a person skilled in the art, are within the scope of the present invention.
The embodiment of the utility model provides a lighting device for semiconductor surface detects with high homogeneity, the device utilize the light that a plurality of optical assembly sent light source 10 to carry out the even light of plastic, according to wafer surface facula size demand, utilize facula adjusting part to form the required shape facula to guaranteeing energy utilization's condition, realizing the facula homogeneity, improve the resolution ratio of acquireing wafer surface image, further improve the detection precision of wafer.
An illumination device for semiconductor surface inspection with high uniformity according to an embodiment of the present invention will be described first with reference to the accompanying drawings.
Specifically, as shown in fig. 1 and fig. 2, an illumination device for semiconductor surface inspection with high uniformity provided by the embodiments of the present invention includes a light source 10, an attenuation module 11, a dodging module 12, a filter module 13, a spot adjustment module, a reflection module 16, and a barrel mirror module 17.
The light source 10 is a xenon lamp, the xenon lamp can emit light with a wide spectral range, the detection requirement for the wafer can be met, and the energy of the light emitted by the xenon lamp is strong.
The attenuation component 11 is used for attenuating the energy of the light emitted by the xenon lamp so as to meet the detection requirement of the wafer.
The dodging assembly 12 is used for dodging the light beam filtered by the attenuation assembly 11 so as to form light spots with the same size and uniformity on the surface of the wafer. The light homogenizing assembly 12 includes a micro lens array, and the uniformity of the light is improved by the micro lens array.
The filter assembly 13 is used for filtering the homogenized light beam to retain light with a preset wavelength, so as to meet the requirement of wafer surface detection.
The light spot adjusting assembly is used for adjusting the light beam after the dodging is filtered into presetting the spot size and presetting the spot shape, light source 10, attenuation subassembly 11, dodging subassembly 12, filtering subassembly 13 and light spot adjusting assembly arrange in proper order and coaxial collineation, and the light beam passes through light source 10, attenuation subassembly 11, dodging subassembly 12, filtering subassembly 13 and light spot adjusting assembly and form first light path a. Based on the size of the wafer size, the shape and the size of the light spot irradiated on the surface of the wafer are adjusted by using the light spot adjusting assembly, so that the precision of the detection of the surface of the wafer is improved. The first optical path a is the y-axis direction in the coordinate system shown in fig. 1, i.e. the schematic diagram of the first optical path a shown in fig. 2.
The reflecting member 16 is located at the end of the first optical path a and is used to reflect the light beam in the first optical path a. The reflection component 16 is a mirror, and the light beam of the first light path a is reflected by the mirror so that the light path is transmitted along the x direction as shown in fig. 1. The reflective element 16 is used to redirect the optical path in order to reduce the overall footprint of the apparatus for wafer surface inspection.
The barrel mirror assembly 17 is used for receiving the light beam reflected by the reflection assembly 16, the reflection assembly 16 and the barrel mirror assembly 17 form a second light path b, the second light path b is perpendicular to the first light path a, and the light beam of the second light path b is emitted and irradiated on the surface of the wafer under the action of the barrel mirror assembly 17.
Above lighting device can adjust light intensity, wavelength, polarization, numerical aperture to light source 10 in order to satisfy different demands to and utilize facula adjusting part can also adjust the facula size and the shape of shining at the wafer surface, in order to satisfy different detection demands.
In an embodiment, the light spot adjusting assembly includes a light spot size adjusting member 14 and a light spot shape adjusting member 15, and the light spot size adjusting member 14 and the light spot shape adjusting member 15 are sequentially arranged along the first light path a. The light spot shape adjusting part 15 is a field diaphragm, and the field diaphragm is used for forming the light on the first light path a into rectangular light spots so as to meet the wafer detection requirement.
In an embodiment, the illumination device further includes a plurality of lenses, and the plurality of lenses are located between the spot adjusting component and the filtering component 13 and located on the first optical path a. The plurality of lenses further improve the uniformity of light rays irradiating the surface of the wafer, and further improve the detection precision of the surface of the wafer.
In an embodiment, the barrel mirror assembly 17 includes a dichroic mirror, the light beam reflected by the reflection assembly 16 is separated by the dichroic mirror, and the separated light beam irradiates the surface of the wafer and forms a third light path, where the third light path is perpendicular to the second light path b.
The third optical path, i.e. the z-axis direction in the coordinate system shown in fig. 1, is located below the barrel mirror assembly 17, the light beam entering the barrel mirror assembly 17 is separated by the dichroic mirror and then transmitted along the third optical path and irradiated onto the surface of the wafer, and forms reflected light on the surface of the wafer and forms an image in the camera 19.
Further, the lighting device further comprises an objective lens 18, the objective lens 18 is connected with the lens assembly 17, the objective lens 18 is located below the lens assembly 17, the objective lens 18 is located above the wafer to be detected, and the light beam passes through the dichroic mirror, is separated to the objective lens 18 and irradiates the surface of the wafer. The objective lens has a good dispersion eliminating effect so as to meet the consistency of imaging effect.
In an embodiment, the lighting device further comprises a cooling assembly mounted on the light source 10 and adapted to cool the light source 10. The light source 10 generates a large amount of heat during the irradiation process, and the cooling component is used for cooling the light source, so that the working efficiency of the light source 10 is improved. The usable water-cooling of cooling module or forced air cooling cool off, the embodiment of the utility model provides a do not restrict.
The foregoing is a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. An illumination device for semiconductor surface inspection with high uniformity, the illumination device comprising:
a light source (10);
an attenuation component (11) for attenuating the energy of the light emitted by the light source (10);
a dodging component (12) for dodging the light beam filtered by the attenuation component (11);
a filter assembly (13) for filtering the homogenized light beam;
the device comprises a light spot adjusting assembly, a light source (10), an attenuation assembly (11), a light homogenizing assembly (12), a filtering assembly (13) and the light spot adjusting assembly, wherein the light spot adjusting assembly is used for adjusting light beams subjected to light homogenizing and filtering into a preset light spot size and a preset light spot shape;
a reflecting component (16) located at the end of the first optical path (a) and used for reflecting the light beam in the first optical path (a);
the barrel mirror assembly (17) is used for receiving the light beam reflected by the reflecting assembly (16), the reflecting assembly (16) and the barrel mirror assembly (17) form a second light path (b), the second light path (b) is perpendicular to the first light path (a), and the light beam of the second light path (b) is emitted and irradiated on the surface of the wafer under the action of the barrel mirror assembly (17).
2. The illumination device for semiconductor surface inspection with high uniformity according to claim 1, wherein the spot size adjusting assembly comprises a spot size adjusting member (14) and a spot shape adjusting member (15), and the spot size adjusting member (14) and the spot shape adjusting member (15) are sequentially arranged along the first optical path (a).
3. The illumination device for semiconductor surface inspection with high uniformity as recited in claim 2, wherein said illumination device further comprises:
a plurality of lenses located between the spot adjusting assembly and a filtering assembly (13) and on the first optical path (a).
4. The illumination device for semiconductor surface inspection with high uniformity according to claim 2, wherein the spot shape adjusting member (15) comprises a field stop.
5. The illumination device with high uniformity for semiconductor surface inspection according to claim 1, wherein the barrel mirror assembly (17) comprises a dichroic mirror, the light beam reflected by the reflection assembly (16) is separated by the dichroic mirror, and the separated light beam is irradiated on the wafer surface and forms a third light path, and the third light path is perpendicular to the second light path (b).
6. The illumination device for semiconductor surface inspection with high uniformity as recited in claim 5, wherein said illumination device further comprises:
the objective lens (18), the objective lens (18) is connected with the lens assembly (17), the objective lens (18) is located below the lens assembly (17), the objective lens (18) is located above the wafer to be detected, and the light beam passes through the dichroic mirror, is separated to the objective lens (18) and irradiates the surface of the wafer.
7. The illumination device for semiconductor surface inspection with high uniformity as recited in claim 1, wherein said illumination device further comprises:
a cooling assembly mounted on the light source (10) and used to cool the light source (10).
8. The illumination device for semiconductor surface inspection with high uniformity according to claim 1, wherein the light source (10) is a xenon lamp.
9. The illumination device with high uniformity for semiconductor surface inspection according to claim 1, wherein said light homogenizing assembly (12) comprises a micro lens array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222776807.7U CN218513422U (en) | 2022-10-19 | 2022-10-19 | Lighting device with high uniformity for semiconductor surface inspection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222776807.7U CN218513422U (en) | 2022-10-19 | 2022-10-19 | Lighting device with high uniformity for semiconductor surface inspection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218513422U true CN218513422U (en) | 2023-02-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222776807.7U Active CN218513422U (en) | 2022-10-19 | 2022-10-19 | Lighting device with high uniformity for semiconductor surface inspection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218513422U (en) |
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2022
- 2022-10-19 CN CN202222776807.7U patent/CN218513422U/en active Active
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