CN218471945U - Double-row pin structure of MOS (Metal oxide semiconductor) tube - Google Patents
Double-row pin structure of MOS (Metal oxide semiconductor) tube Download PDFInfo
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- CN218471945U CN218471945U CN202222190928.3U CN202222190928U CN218471945U CN 218471945 U CN218471945 U CN 218471945U CN 202222190928 U CN202222190928 U CN 202222190928U CN 218471945 U CN218471945 U CN 218471945U
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- 239000004065 semiconductor Substances 0.000 title description 3
- 229910044991 metal oxide Inorganic materials 0.000 title description 2
- 150000004706 metal oxides Chemical class 0.000 title description 2
- 238000004806 packaging method and process Methods 0.000 claims abstract description 25
- 230000005611 electricity Effects 0.000 claims 9
- 230000000694 effects Effects 0.000 abstract description 6
- 238000005452 bending Methods 0.000 abstract description 5
- 238000005493 welding type Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000005669 field effect Effects 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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Abstract
The utility model relates to a MOS transistor technical field, concretely relates to double pin structure of MOS pipe, include: the chip is arranged in the packaging body, the pin group is electrically connected with the chip and penetrates through the packaging body to be exposed outside, the inner diameter surface of the outer connecting sleeve is matched with the outer diameter surface of the packaging body, the outer connecting sleeve is sleeved on the outer diameter surface of the packaging body in a sliding mode, and the outer pins are fixedly arranged on two side wall surfaces of the outer connecting sleeve and are electrically connected with the pin group through the external pin parallel structure. The external connecting sleeve is sleeved on the pin part of the in-line MOS tube, the external pins are respectively arranged on the two side wall surfaces of the external connecting sleeve, and the source electrode, the drain electrode and the grid electrode of the external pin are selectively arranged on the two side wall surfaces of the external connecting sleeve and welded on the circuit board according to the circuit requirement, so that the effect of double-row pins is formed, and the in-line MOS tube can be converted into a welded MOS tube without bending the pins.
Description
Technical Field
The utility model relates to a MOS transistor technical field, concretely relates to double pin structure of MOS pipe.
Background
The MOS transistor, also called an insulated gate field effect transistor, may specifically include a PMOS transistor, an NMOS transistor, a VMOS transistor, and the like, and the insulated gate field effect transistor, i.e., a metal-oxide-semiconductor field effect transistor, generally denoted by MOS, referred to as MOS for short, has a higher input impedance than a junction field effect transistor, and is simpler in manufacturing process, flexible and convenient to use, and very advantageous for high integration.
In the MOS tubes, in order to conveniently connect electronic elements for adaptation, pins of some MOS tubes are designed to be in an in-line mode, so that the MOS tubes are convenient to plug; some MOS pipe pins are designed to be bent, so that welding is facilitated. The conventional design of the welded MOS tube is that three pins are respectively arranged on two side wall surfaces of an MOS tube packaging structure, and the pins are bent and are conveniently and horizontally placed on an installation part for pin welding. Pins are arranged on two side wall surfaces of the packaging structure so as to facilitate the stability and firmness of welding. However, when the pins of the soldering MOS transistor are soldered, the pins are bent by a tool to be parallel to the circuit board for the reason of circuit design, and the in-line MOS transistor cannot achieve the soldering effect at all.
In view of the above, it is desirable to design a double-row pin structure of an MOS transistor, in which an external connection sleeve is sleeved on a pin portion of an in-line MOS transistor, and external pins are respectively disposed on two side walls of the external connection sleeve, and the external pins are connected in series with the pin portion of the in-line MOS transistor by using a parallel connection relationship between the external pins, so as to form an electrical connection relationship. When the welding type MOS tube connecting device is used, the source electrode, the drain electrode and the grid electrode of the external pin are selectively arranged on the two side wall surfaces of the external sleeve according to circuit requirements and are welded on a circuit board, so that the effect of double rows of pins is formed, the in-line MOS tube can be converted into the welding type MOS tube without bending the pin, and the production complexity of the welding type MOS tube is reduced.
SUMMERY OF THE UTILITY MODEL
In order to solve the defects of the prior art, the utility model aims to provide a double pin structure of MOS pipe establishes the outer adapter sleeve through the pin portion cover at in-line type MOS pipe, is provided with external pin respectively at the both sides wall face of outer adapter sleeve, utilizes the relation of connecting in parallel each other between the external pin and establishes ties with the pin portion of in-line type MOS pipe to form the relation of connecting even. When the welding type MOS tube connecting structure is used, the source electrode, the drain electrode and the grid electrode of the external pin are selectively arranged on the two side wall surfaces of the external sleeve and welded on a circuit board according to circuit requirements, so that the effect of double rows of pins is formed, the in-line MOS tube can be converted into the welding type MOS tube without bending the pin, and the production complexity of the welding type MOS tube is reduced.
In order to realize the above object, the technical scheme of the utility model is that: a double pin-out structure of MOS tube includes: packaging body, chip, pin group, outer adapter sleeve, external pin and external pin parallel structure, the chip mounting is in the packaging body, pin group with chip electric connection runs through the packaging body exposes outside, the internal diameter face of outer adapter sleeve with the external diameter face of packaging body cooperatees, outer adapter sleeve slidable cover is established on the external diameter face of packaging body, external pin fixed mounting be in the both sides lateral wall face of outer adapter sleeve and through external pin parallel structure with electric connection is organized to the pin.
Further, the package body includes: chip mounting groove, pin group mounting groove and slip gomphosis eaves, the chip mounting groove with the chip cooperatees, the chip can the mosaic install in the chip mounting groove, the pin group mounting groove is seted up chip mounting groove bottom, the pin group mounting groove with the pin group cooperatees, but the gomphosis of pin group is installed in the mounting groove is organized to the pin, slip gomphosis eaves fixed mounting be in the both sides lateral surface of packaging body.
Further, the pin group includes: the source electrode pin, the drain electrode pin and the grid electrode pin are respectively embedded in the pin group installation grooves and electrically connected with the chip.
Further, the external sleeve includes: a source pin embedding guide sleeve, a drain pin embedding guide sleeve, a grid pin embedding guide sleeve and a sliding embedding groove, wherein the source pin embedding guide sleeve is matched with the source pin, the drain pin embedding guide sleeve is matched with the drain pin, the grid pin embedding guide sleeve is matched with the grid pin, the source electrode pin embedding guide sleeve, the drain electrode pin embedding guide sleeve and the grid electrode pin embedding guide sleeve are arranged at the bottom of the inner diameter surface of the external connecting sleeve side by side, and the sliding embedding grooves are fixedly arranged on two side walls of the inner diameter surface of the external connecting sleeve and matched with the sliding embedding eaves.
Further, the external pin includes: the source electrode pin group, the drain electrode pin group and the grid electrode pin group are respectively arranged on two side wall surfaces of the external connection sleeve side by side and are electrically connected with the source electrode pin, the drain electrode pin and the grid electrode pin through an external pin parallel structure.
Further, the external pin parallel structure includes: the source is extremely electrically connected with the core, the drain is electrically connected with the core and the gate is electrically connected with the core, the source is extremely electrically connected with the core fixed mounting the source pin embedded bottom surface, the drain is extremely electrically connected with the core fixed mounting the drain pin embedded bottom surface, the gate is extremely electrically connected with the core fixed mounting the gate pin embedded bottom surface, the source is extremely electrically connected with the core, the drain is electrically connected with the core and the gate is electrically connected with the source pin group, the drain pin group and the gate pin group respectively.
Has the advantages that:
the utility model provides a pair of double pin structure of MOS pipe establishes outer adapter sleeve through the pin portion cover at in-line arrangement MOS pipe, is provided with external pin respectively at the both sides wall face of outer adapter sleeve, utilizes the relation of connecting in parallel each other between the external pin to establish ties with the pin portion of in-line arrangement MOS pipe to form the relation of linking electrically. When the welding type MOS tube connecting structure is used, the source electrode, the drain electrode and the grid electrode of the external pin are selectively arranged on the two side wall surfaces of the external sleeve and welded on a circuit board according to circuit requirements, so that the effect of double rows of pins is formed, the in-line MOS tube can be converted into the welding type MOS tube without bending the pin, and the production complexity of the welding type MOS tube is reduced.
Drawings
Fig. 1 is a schematic view of the overall structure of a double-row pin structure of a MOS transistor according to the present invention;
fig. 2 is the schematic diagram of the electrical connection principle of the double-row pin structure of the MOS transistor of the present invention.
In the figure: 1-package, 2-chip, 3-pin group, 4-external connection sleeve, 5-external connection pin, 6-external connection pin parallel structure, 11-chip installation groove, 12-pin group installation groove, 13-sliding embedding brim, 31-source pin, 32-drain pin, 33-gate pin, 41-source pin embedding guide sleeve, 42-drain pin embedding guide sleeve, 43-gate pin embedding guide sleeve, 44-sliding embedding groove, 51-source pin group, 52-drain pin group, 53-gate pin group, 61-source electric connection core, 62-drain electric connection core, 63-gate electric connection core.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art all belong to the protection scope of the present invention.
As shown in fig. 1-2, the utility model discloses a double pin structure of MOS pipe, include: packaging body 1, chip 2, pin group 3, external cover 4, external pin 5 and external pin parallel structure 6, chip 2 is installed in packaging body 1, pin group 3 with 2 electric connection of chip run through packaging body 1 exposes outside, the internal diameter face of external cover 4 with packaging body 1's external diameter face cooperatees, the cover that can slide of external cover 4 is established on packaging body 1 external diameter face, external pin 5 fixed mounting be in external cover 4's both sides lateral wall face and through external pin parallel structure 6 with 3 electric connection of pin group.
In this embodiment, the package 1 includes: chip mounting groove 11, pin group mounting groove 12 and slip gomphosis eaves 13, chip mounting groove 11 with chip 2 cooperatees, chip 2 can the mosaic install in chip mounting groove 11, pin group mounting groove 12 is seted up chip mounting groove 11 bottom, pin group mounting groove 12 with pin group 3 cooperatees, pin group 3 can the mosaic install in pin group mounting groove 12, slip gomphosis eaves 13 fixed mounting be in the both sides wall of packaging body 1.
In this embodiment, the lead group 3 includes: a source lead 31, a drain lead 32 and a gate lead 33, wherein the source lead 31, the drain lead 32 and the gate lead 33 are respectively embedded in the lead group mounting groove 12 and electrically connected with the chip 2.
In this embodiment, the external sleeve 4 includes: a source lead fitting guide bush 41, a drain lead fitting guide bush 42, a gate lead fitting guide bush 43, and a slide fitting groove 44, the source lead fitting guide bush 41 is fitted to the source lead 31, the drain lead fitting guide bush 42 is fitted to the drain lead 32, the gate lead fitting guide bush 43 is fitted to the gate lead 33, the source lead fitting guide bush 41, the drain lead fitting guide bush 42, and the gate lead fitting guide bush 43 are installed side by side at the bottom of the inner diameter surface of the external contact socket 4, and the slide fitting groove 44 is fixedly installed on both side walls of the inner diameter surface of the external contact socket 4 and is fitted to the slide fitting eaves 13.
In this embodiment, the external pin 5 includes: the source lead group 3, the drain lead group 52 and the gate lead group 53 are respectively mounted on two side wall surfaces of the external connection sleeve 4 side by side and electrically connected with the source lead 31, the drain lead 32 and the gate lead 33 through the external connection lead parallel structure 6.
In this embodiment, the external pin parallel structure 6 includes: source electrical connection core 61, drain electrical connection core 62 and grid electrical connection core 63, source electrical connection core 61 fixed mounting in source pin embedding guide 41 bottom face, drain electrical connection core 62 fixed mounting in drain pin embedding guide 42 bottom face, grid electrical connection core 63 fixed mounting in grid pin embedding guide 43 bottom face, source electrical connection core 61, drain electrical connection core 62 and grid electrical connection core 63 respectively with source pin group 51, drain pin group 52 and grid pin group 53 electrical connection.
The working principle is as follows:
first, since the chip 2 and the lead group 3 are mounted in the package 1, the lead group 3 is exposed through the package 1, which is a lead in-line MOS transistor. Because the two side wall surfaces of the package body 1 are fixedly provided with the sliding embedded eaves 13, and the two side walls of the inner diameter surface of the external sleeve 4 are provided with the sliding embedded grooves 44, the package body 1 can push the sliding embedded eaves 13 into the external sleeve 4 along the sliding embedded grooves 44, and the external sleeve 4 surrounds the outer diameter surface of the package body 1.
Wherein, the inner bottom of the external sleeve 4 is fixedly installed with a source lead embedding guide sleeve 41, a drain lead embedding guide sleeve 42 and a gate lead embedding guide sleeve 43. After the package 1 is slidably inserted into the external sleeve 4, the source lead 31 of the lead group 3 is inserted into the source lead insertion guide sleeve 41, the drain lead 32 is inserted into the drain lead insertion guide sleeve 42, and the gate lead 33 is inserted into the gate lead insertion guide sleeve 43, and at this time, the external sleeve 4 fixedly sleeves the lead group 3.
Because the bottom of the source pin embedding guide sleeve 41 is fixedly provided with the source electric connecting core 61, the source electric connecting core 61 is contacted with the source pin 31 to take a point, and the electric connection is realized; a drain electrical connection core 62 is fixedly installed at the bottom of the drain pin embedding guide sleeve 42, and the drain electrical connection core 62 is in contact with the drain pin 32 to take a point so as to realize electrical connection; a gate electrical connection core 63 is fixedly mounted at the bottom of the gate pin fitting guide 43, and the gate electrical connection core 63 contacts with the gate pin 33 to take a point, thereby achieving electrical connection. The source electrical connection core 61, the drain electrical connection core 62, and the gate electrical connection core 63 are electrically connected to the source lead group 51, the drain lead group 52, and the gate lead group 53, respectively, by wires. Since the source lead group 51, the drain lead group 52, and the gate lead group 53 are respectively disposed on both side wall surfaces of the external connection member 4, the source lead group 51 is connected in parallel to the source electrical connection core 61, and the drain lead group 52 and the gate lead group 53 are also the same.
Finally, after the packaging body 1 is embedded in the external sleeve 4, according to the distribution arrangement of the circuit board, a proper external pin 5 is selected for welding, and the selected source electrode, the selected drain electrode and the selected grid electrode can be distributed on two side wall surfaces of the external sleeve 4.
The utility model provides a pair of double pin structure of MOS pipe establishes outer adapter sleeve 4 through the pin portion cover at in-line arrangement MOS pipe, is provided with external pin 5 respectively at the both sides wall face of outer adapter sleeve 4, utilizes the relation of connecting in parallel each other between external pin 5 and the pin portion of in-line arrangement MOS pipe to establish ties to form the relation of connecting even. When the welding type MOS transistor is used, the source electrode, the drain electrode and the grid electrode of the external pin 5 are selectively arranged on the two side wall surfaces of the external sleeve 4 according to circuit requirements and are welded on a circuit board, so that the effect of double rows of pins is formed, the in-line type MOS transistor can be converted into the welding type MOS transistor without bending the pin, and the production complexity of the welding type MOS transistor is reduced.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not intended to limit the present invention, and all modifications, equivalents, improvements and the like that are within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (6)
1. A double pin-out structure of MOS tube includes: packaging body (1), chip (2), pin group (3), outer adapter sleeve (4), external pin (5) and external pin parallel structure (6), its characterized in that, install chip (2) in packaging body (1), pin group (3) with chip (2) electric connection runs through packaging body (1) exposes outward, the inside diameter face of outer adapter sleeve (4) with the external diameter face of packaging body (1) cooperatees, but outer adapter sleeve (4) slidable cover is established on packaging body (1) outside diameter face, external pin (5) fixed mounting be in the both sides wall face of outer adapter sleeve (4) and through external pin parallel structure (6) with pin group (3) electric connection.
2. The double row pin structure of a MOS transistor according to claim 1, wherein the package body (1) comprises: chip mounting groove (11), pin group mounting groove (12) and slip gomphosis eaves (13), chip mounting groove (11) with chip (2) cooperate, chip (2) can the snap fit install in chip mounting groove (11), the pin is organized mounting groove (12) and is seted up chip mounting groove (11) bottom, pin group mounting groove (12) with the pin is organized (3) and is cooperateed, the pin is organized (3) can the snap fit install in the pin is organized in mounting groove (12), slip gomphosis eaves (13) fixed mounting be in the both side walls of packaging body (1).
3. The double row pin structure of a MOS transistor according to claim 2, characterized in that the pin group (3) comprises: the chip comprises a source lead (31), a drain lead (32) and a grid lead (33), wherein the source lead (31), the drain lead (32) and the grid lead (33) are respectively embedded in the lead group mounting groove (12) and electrically connected with the chip (2).
4. The double row pin structure of a MOS transistor according to claim 3, characterized in that the external sleeve (4) comprises: the source electrode pin embedding guide sleeve (41), the drain electrode pin embedding guide sleeve (42), the grid electrode pin embedding guide sleeve (43) and the sliding embedding groove (44), the source electrode pin embedding guide sleeve (41) is matched with the source electrode pin (31), the drain electrode pin embedding guide sleeve (42) is matched with the drain electrode pin (32), the grid electrode pin embedding guide sleeve (43) is matched with the grid electrode pin (33), the source electrode pin embedding guide sleeve (41), the drain electrode pin embedding guide sleeve (42) and the grid electrode pin embedding guide sleeve (43) are arranged at the bottom of the inner diameter surface of the external connecting sleeve (4) side by side, and the sliding embedding groove (44) is fixedly arranged on two side walls of the inner diameter surface of the external connecting sleeve (4) and is matched with the sliding embedding eaves (13).
5. The double row pin structure of the MOS transistor as claimed in claim 4, wherein the external pin (5) comprises: the source electrode pin group (51), the drain electrode pin group (52) and the grid electrode pin group (53), wherein the source electrode pin group (51), the drain electrode pin group (52) and the grid electrode pin group (53) are respectively installed on two side wall surfaces of the external connection sleeve (4) in parallel and are electrically connected with the source electrode pin (31), the drain electrode pin (32) and the grid electrode pin (33) through an external pin parallel structure (6).
6. The double row pin structure of a MOS transistor according to claim 5, wherein the external pin parallel structure (6) comprises: source electricity is even core (61), drain electricity is even core (62) and grid electricity is even core (63), source electricity is even core (61) fixed mounting in source pin gomphosis guide pin (41) bottom face, drain electricity is even core (62) fixed mounting in drain pin gomphosis guide pin (42) bottom face, grid electricity is even core (63) fixed mounting in grid pin gomphosis guide pin (43) bottom face, source electricity is even core (61), drain electricity is even core (62) and grid electricity is even core (63) respectively with source lead group (51), drain lead group (52) and grid lead group (53) electric connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222190928.3U CN218471945U (en) | 2022-08-19 | 2022-08-19 | Double-row pin structure of MOS (Metal oxide semiconductor) tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222190928.3U CN218471945U (en) | 2022-08-19 | 2022-08-19 | Double-row pin structure of MOS (Metal oxide semiconductor) tube |
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| Publication Number | Publication Date |
|---|---|
| CN218471945U true CN218471945U (en) | 2023-02-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222190928.3U Active CN218471945U (en) | 2022-08-19 | 2022-08-19 | Double-row pin structure of MOS (Metal oxide semiconductor) tube |
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| Country | Link |
|---|---|
| CN (1) | CN218471945U (en) |
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Effective date of registration: 20231124 Address after: 523430 Building 1 and 2, No. 70, Liaobu Baiye Road, Liaobu Town, Dongguan City, Guangdong Province Patentee after: Xianzhike semiconductor technology (Dongguan) Co.,Ltd. Address before: 523430 Room 102, building 1, 76 Baiye Road, Liaobu Town, Dongguan City, Guangdong Province Patentee before: Mutual Creation (Dongguan) Electronic Technology Co.,Ltd. |