CN218404493U - Solid-state draft tube annular felt - Google Patents
Solid-state draft tube annular felt Download PDFInfo
- Publication number
- CN218404493U CN218404493U CN202222638860.0U CN202222638860U CN218404493U CN 218404493 U CN218404493 U CN 218404493U CN 202222638860 U CN202222638860 U CN 202222638860U CN 218404493 U CN218404493 U CN 218404493U
- Authority
- CN
- China
- Prior art keywords
- ring
- felt
- platform
- draft tube
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
The utility model discloses a solid-state draft tube ring felt, including ring felt (2) of high-purity quartz material, be equipped with through-hole (2 a) on it, be equipped with ring closure (6) between ring felt (2) and last heat preservation section of thick bamboo (4), including ring platform (61) and the crown plate (62) that link to each other, crown plate (62) divide ring platform (61) into interior ring platform (611) and outer ring platform (612), the last edge (1 a) joint of interior draft tube (11) and outer draft tube (12) is on interior ring platform (611), crown plate (62) are located between last edge (1 a) and ring felt (2), ring felt (2) are connected on outer ring platform (612), outer ring platform (612) lower part is equipped with ladder groove (612 a); the upper cover plate (3) is connected with an air sealing ring (7). The utility model has the advantages that during reducing graphite powder and getting into the silicon liquid, promote the single crystal stick quality, reduce the abnormal recovery that the single crystal silicon rod caused because of carbon content exceeds standard, reduce the broken string simultaneously and improve single crystal silicon rod productivity.
Description
Technical Field
The utility model relates to a photovoltaic manufacturing technology field especially relates to a solid-state draft tube ring felt.
Background
A Czochralski method for producing monocrystalline silicon is characterized by that firstly, solid silicon material is placed in a quartz crucible, the quartz crucible containing silicon material is suspended into a single crystal furnace by means of single crystal furnace suspension arm, then the furnace body is closed, argon gas is introduced to make the whole single crystal furnace be in vacuum state, the gas and volatile matter in the single crystal furnace are pumped out of the single crystal furnace by means of dry pump, the solid silicon material block is heated to about 1420 deg.C by means of main heater and bottom heater and melted to obtain silicon liquid, and the monocrystalline silicon atoms are periodically and orderly arranged according to a certain rule to implement the growth process of monocrystalline silicon by means of cyclic operation of technological steps of regulating temperature, seeding, shouldering, turning shoulder, isometric diameter and ending, etc. so as to attain the operation time of monocrystalline process, and then the heater is closed to implement furnace-stopping cooling.
In the process of whole crystal pulling, the argon gas flow direction can be way draft tube apron and solid-state draft tube ring felt, because solid-state draft tube ring felt is the graphite material, at the lift heat exchanger in-process, solid-state draft tube ring felt and draft tube outer bag and draft tube apron can have wearing and tearing, the argon gas can bring the graphite powder under wearing and tearing into and cause the monocrystalline silicon rod carbon content of drawing to exceed standard in the silicon fluid, influence the monocrystalline silicon rod quality, this novel reducible graphite powder of solid-state draft tube ring felt device gets into the silicon fluid in, obviously reduce carbon content and promote the monocrystalline rod quality, reduce the unusual recovery that the monocrystalline silicon rod caused because of carbon content exceeds standard, reduce the broken string and improve silicon rod single crystal productivity.
SUMMERY OF THE UTILITY MODEL
The utility model discloses the purpose is exactly in order to solve and easily sneak into silicon liquid with graphite powder after the ring felt wearing and tearing and cause the poor problem of silicon rod quality, provides a solid-state draft tube ring felt, and reducible graphite powder gets into in the silicon liquid, obviously reduces carbon content, promotes the single crystal stick quality, reduces the abnormal recovery that the single crystal silicon rod caused because of carbon content exceeds standard, reduces the broken string simultaneously and improves single crystal silicon rod productivity.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a solid guide cylinder annular felt comprises annular felts arranged on the upper edges of an inner guide cylinder and an outer guide cylinder, wherein an upper cover plate is arranged at the upper part of the annular felt;
the ring felt is a high-purity quartz ring felt, a pair of through holes are formed in the ring felt, a ring cover is arranged between the ring felt and the upper heat-preserving cylinder and comprises a horizontal ring platform and a vertical ring plate, the ring plate is of a cylindrical structure and is coaxially arranged with the ring platform, the ring plate is connected to the ring platform and is divided into an inner ring platform and an outer ring platform, the upper edges of the inner guide cylinder and the outer guide cylinder are clamped on the inner ring platform, the ring plate is arranged between the upper edges of the inner guide cylinder and the outer guide cylinder and the ring felt, the ring felt is connected to the upper portion of the outer ring platform, a stepped groove is formed in the lower portion of the outer ring platform, and the upper portion of the upper heat-preserving cylinder is connected into the stepped groove;
the upper part of the upper cover plate is also connected with an air sealing ring which is arranged above the ring plate.
Further, the two through holes are symmetrically arranged left and right by taking the axis of the annular felt as a center line.
Further, the straight line distance between the through hole and the outer wall and the inner wall of the annular felt is the same.
Further, the ring platform and the ring plate are integrally formed.
Further, the upper surface of the annular plate is flush with the upper surface of the upper cover plate.
Further, the width of the outer annular table is less than half of the width of the annular felt.
Compared with the prior art, the utility model discloses a technical scheme's advantage specifically lies in:
(1) The annular felt is made of high-purity quartz, replaces the traditional graphite material, effectively prevents graphite powder generated in abrasion from entering silicon liquid, obviously reduces the carbon content, improves the quality of the single crystal rod, reduces the abnormal recovery amount of the single crystal silicon rod due to the over standard carbon content, simultaneously reduces the wire breakage condition and improves the productivity of the single crystal silicon rod;
(2) The ring covers are additionally arranged among the ring felt, the cover plate and the guide cylinder and are separated by the vertical ring plate, so that the direct abrasion among the ring felt, the guide cylinder outer liner and the cover plate is avoided in the process of lifting the heat exchanger, and the friction among all parts is reduced while the heat preservation is ensured;
(3) Be equipped with the through-hole on the ring felt, and the horizontal ring platform of ring cover can not block the through-hole, keeps the flow direction when being favorable to argon gas route apron and ring felt, does benefit to the argon gas and smoothly flows downwards along last heat preservation section of thick bamboo outer wall, avoids guaranteeing the quality of silicon liquid and silicon rod in substituting the outside impurity of section of thick bamboo into inside silicon liquid.
Drawings
Fig. 1 is a structural diagram of a solid-state draft tube annular felt of the present invention;
FIG. 2 is a perspective view of the ring felt of the present invention;
fig. 3 is a cross-sectional view of the ring felt of the present invention.
Detailed Description
Example 1
In order to make the present invention more clearly understood, the following description is further made in conjunction with the accompanying drawings, and the embodiments described herein are only used for explaining the present invention, and are not used for limiting the present invention.
Referring to fig. 1, a solid-state draft tube annular felt, including locating the annular felt 2 on inner draft tube 11 and outer draft tube 12 upper edge, the upper portion of annular felt 2 is equipped with upper cover plate 3, and the below of annular felt 2 is equipped with a heat preservation section of thick bamboo 4, is equipped with crucible 5 in the heat preservation section of thick bamboo 4, and in crucible 5 was arranged in to the lower part of outer draft tube 12, its characterized in that:
referring to fig. 2 and 3, the ring felt 2 is a high-purity quartz ring felt, a pair of through holes 2a are formed in the ring felt, the two through holes 2a are symmetrically arranged left and right by taking the axis of the ring felt 2 as a central line, and the linear distance between each through hole 2a and the outer wall and the inner wall of the ring felt 2 is the same;
referring to fig. 1, a ring cover 6 is arranged between the ring felt 2 and the upper heat-insulating cylinder 4, the ring cover 6 comprises a horizontal ring platform 61 and a vertical ring plate 62, and the ring platform 61 and the ring plate 62 are integrally formed;
the ring plate 62 is a cylindrical structure and is arranged coaxially with the ring platform 61, and the ring plate 62 is connected to the ring platform 61 and divides the ring platform 61 into an inner ring platform 611 and an outer ring platform 612;
the upper edges of the inner guide cylinder 11 and the outer guide cylinder 12 are clamped on the inner annular table 611, the annular plate 62 is arranged between the upper edges 1a of the inner guide cylinder and the outer guide cylinder and the annular felt 2, and the upper edge 1a of the annular plate 62 is flush with the upper surface of the upper cover plate 3;
the annular felt 2 is connected to the upper part of the outer annular table 612, and the width of the outer annular table 612 is smaller than half of the width of the annular felt 2 so as to ensure that the annular table does not block the vent holes in the annular felt;
the lower part of the outer ring platform 612 is provided with a stepped groove 612a, and the upper part of the upper heat-preserving cylinder 4 is connected in the stepped groove 612 a;
the upper part of the upper cover plate 3 is also connected with a face air sealing ring 7, and the air sealing ring 7 is arranged above the ring plate 62.
The utility model discloses be as above shape with solid-state draft tube ring felt design, adjust solid-state draft tube ring felt material into high-purity quartz material by graphite, reduced because of the graphite powder that the friction caused gets into silicon liquid inside when guaranteeing the heat insulating ability on the one hand, obviously reduce carbon content, promoted the single crystal rod quality, reduced the abnormal recovery that the single crystal silicon rod caused because of carbon content exceeds standard, reduced the broken string condition on the other hand, improved single crystal silicon rod productivity.
In addition to the above embodiments, the present invention may have other embodiments. All the technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the protection scope claimed by the present invention.
Claims (6)
1. The utility model provides a solid-state draft tube ring felt, is equipped with upper cover plate (3) including ring felt (2) of edge on locating interior draft tube (11) and outer draft tube (12), the upper portion of ring felt (2), and the below of ring felt (2) is equipped with heat preservation section of thick bamboo (4), goes up to be equipped with crucible (5) in heat preservation section of thick bamboo (4), and in crucible (5) were arranged in to the lower part of outer draft tube (12), its characterized in that:
the ring felt (2) is a high-purity quartz ring felt, a pair of through holes (2 a) are formed in the ring felt, a ring cover (6) is arranged between the ring felt (2) and the upper heat-preservation cylinder (4), the ring cover (6) comprises a horizontal ring platform (61) and a vertical ring plate (62), the ring plate (62) is of a cylindrical structure and is coaxially arranged with the ring platform (61), the ring plate (62) is connected to the ring platform (61) and divides the ring platform (61) into an inner ring platform (611) and an outer ring platform (612), the upper edges (1 a) of the inner guide cylinder (11) and the outer guide cylinder (12) are clamped on the inner ring platform (611), the ring plate (62) is arranged between the upper edges (1 a) of the inner guide cylinder and the outer guide cylinder and the ring felt (2), the ring felt (2) is connected to the upper portion of the outer ring platform (612), a stepped groove (612 a) is formed in the lower portion of the outer ring platform (612), and the upper portion of the upper heat-preservation cylinder (4) is connected to the inner stepped groove (612 a);
the upper part of the upper cover plate (3) is also connected with a face air sealing ring (7), and the air sealing ring (7) is arranged above the ring plate (62).
2. The solid state spar ring felt of claim 1, wherein:
the two through holes (2 a) are arranged in bilateral symmetry by taking the axis of the annular felt (2) as a central line.
3. The solid state spar ring felt of claim 1 or 2, wherein:
the straight line distance between the through hole (2 a) and the outer wall and the inner wall of the annular felt (2) is the same.
4. The solid state air guide cylinder ring felt according to claim 1 or 2, characterized in that:
the ring table (61) and the ring plate (62) are integrally formed.
5. The solid state spar ring felt of claim 1 or 2, wherein:
the upper surface of the ring plate (62) is flush with the upper surface of the upper cover plate (3).
6. The solid state spar ring felt of claim 1 or 2, wherein:
the width of the outer annular table (612) is less than half of the width of the annular felt (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222638860.0U CN218404493U (en) | 2022-10-09 | 2022-10-09 | Solid-state draft tube annular felt |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222638860.0U CN218404493U (en) | 2022-10-09 | 2022-10-09 | Solid-state draft tube annular felt |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218404493U true CN218404493U (en) | 2023-01-31 |
Family
ID=84998781
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222638860.0U Active CN218404493U (en) | 2022-10-09 | 2022-10-09 | Solid-state draft tube annular felt |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218404493U (en) |
-
2022
- 2022-10-09 CN CN202222638860.0U patent/CN218404493U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5413354B2 (en) | Silicon single crystal pulling apparatus and silicon single crystal manufacturing method | |
| US8172945B2 (en) | High-purity vitreous silica crucible for pulling large-diameter single-crystal silicon ingot | |
| CN105442037A (en) | High-speed single crystal growth device | |
| CN105970295B (en) | A kind of device and method of liquid phase method growth carborundum crystals | |
| CN110195256A (en) | Monocrystalline silicon repeatedly feeds the device continuously grown and technique | |
| JPS6379790A (en) | Crystal pulling up device | |
| CN110923810A (en) | Device and process for regulating and controlling liquid level position in equal-diameter growth process of large-size monocrystalline silicon | |
| CN218404493U (en) | Solid-state draft tube annular felt | |
| CN101709506A (en) | Exhaust method and device of thermal field of single crystal furnace | |
| CN217104143U (en) | Thermal field structure of czochralski crystal growing furnace | |
| CN205295534U (en) | High -speed growth of single crystal device | |
| CN110512280A (en) | A kind of device and method of EFG technique growth sealing sapphire pipe | |
| JP2018052783A (en) | Heater insulation structure, and single crystal production apparatus | |
| CN115142130B (en) | Method and device for growing flaky gallium oxide crystals by micro-pull-down zone melting method | |
| CN213652724U (en) | Thermal field structure of continuous crystal pulling single crystal furnace | |
| CN205635847U (en) | Single crystal pulling furnace | |
| CN205241851U (en) | Single crystal furnace heating system | |
| CN206768273U (en) | A kind of semiconductor single-crystal growth thermal field | |
| CN219409989U (en) | Feeder of single crystal furnace | |
| CN112725890A (en) | Crystal growth apparatus and crystal growth method | |
| CN204198901U (en) | A kind of sapphire crystal EFG technique growing apparatus | |
| CN205907395U (en) | Can prevent liquid phase method growth cement foaming machine's that silicon steam spills over device | |
| CN215366055U (en) | Radiating fin type conical barrel water cooling device | |
| CN210916346U (en) | Intelligent temperature control single crystal furnace for chip manufacturing | |
| CN206512316U (en) | A kind of attemperator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |