CN218341779U - Full-automatic wafer back face thinning machine - Google Patents

Abstract

The utility model belongs to the technical field of wafer processing, a full-automatic wafer back attenuate machine is disclosed, including the frame, the front end of frame is provided with wafer box frame, and the middle part of frame is provided with the grinding table, lies in on the frame to be provided with centering mechanism and wafer wiper mechanism between wafer box frame and the grinding table, and the rear end of frame is provided with grinding mechanism, and the grinding table includes rotatory big mesa and the rotatory little mesa that the three edge center pin rotational symmetry in its top set up. This application is through integrated centering mechanism, grinding mechanism and the wiper mechanism that sets up on the frame to through the rotation of grinding table and get the drive of putting material arm and rotatory loading arm, drive the wafer and transmit between each mechanism, effectively guarantee the position accuracy of wafer in the transmission course, and then guaranteed the concentricity of wafer and grinding mechanism, through the mesa wiper mechanism that sets up on the frame, prevent to grind the bench and accumulate the follow-up wafer of dust pollution, degree of automation is higher.

Description

Full-automatic wafer back face thinning machine

Technical Field

The application relates to the technical field of wafer processing, in particular to a full-automatic wafer back thinning machine.

Background

The wafer is a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, and is called a wafer because it has a circular shape. Various circuit element structures can be processed on a silicon wafer to form an integrated circuit product with specific electrical functions. In the semiconductor industry, before the integrated circuit is packaged, a certain thickness of the excess substrate material on the back side of the wafer needs to be removed to manufacture more complex and miniaturized integrated circuits, and this process is called as a wafer back side thinning process.

Wafer attenuate course of working includes preceding washing, attaches, polishing, back washing, drying and receives and to take in box etc. in current production facility, usually separately goes on polishing operation and cleaning operation, and wafer substrate has the risk of damaging in the in-process that shifts between each process for the yields reduces, in addition, has the unreasonable, the lower problem of operating efficiency and degree of automation of overall arrangement between the operation equipment of each process.

SUMMERY OF THE UTILITY MODEL

In order to solve the problem, the application provides a full-automatic wafer back face thinning machine.

The application provides a full-automatic wafer back attenuate machine adopts following technical scheme:

the utility model provides a full-automatic wafer back attenuate machine, includes the frame, the front end of frame is provided with wafer box frame, the middle part of frame is provided with the grinding table, lie in on the frame be provided with centering mechanism and wafer wiper mechanism between wafer box frame and the grinding table, the rear end of frame is provided with grinding mechanism, the grinding table includes rotatory big mesa and the three rotatory little mesa of center pin rotational symmetry setting along its top, lie in on the frame wafer box frame, centering mechanism and wafer wiper mechanism three's geometric centre position is provided with gets puts the material arm, lie in on the frame be provided with rotatory loading arm between centering mechanism, wafer wiper mechanism and the grinding table, lie in on the frame front end one side of grinding table is provided with mesa wiper mechanism.

Furthermore, mesa wiper mechanism includes supporting beam and two rotatory cleaning head of sliding connection in its one side, the vertical projection position of rotatory cleaning head with rotatory little mesa corresponds.

Through above-mentioned technical scheme, realized the self-cleaning to grinding bench top, prevented that grinding waste and dust from gathering on grinding the bench.

Furthermore, the grinding mechanism comprises an installation stand column and two grinding heads arranged at the front end of the installation stand column, the two grinding heads are respectively a rough grinding head and a fine grinding head, the positions and the intervals of the two grinding heads respectively correspond to the small rotating table board, and the grinding heads are in sliding connection with the installation stand column through high-precision lead screw guide rail devices.

Through above-mentioned technical scheme, grinding head moves along vertical direction at the front side of installation stand under the effect of high accuracy lead screw guide rail device, realizes the control to grinding thickness, through setting up two grinding heads of corase grind and correct grinding, has further improved grinding quality and grinding efficiency.

Furthermore, the machine base is provided with a thickness detection device at the position corresponding to the grinding head.

Through the technical scheme, the grinding thickness can be detected in real time and precisely controlled, and the end point can be automatically controlled according to the detected thickness.

Further, the wafer cleaning mechanism comprises a flushing device and a drying device.

Through the technical scheme, the thinned wafer is cleaned by spraying deionized water through the flushing device, and water remained on the wafer is removed through the drying device.

Furthermore, the top surfaces of the centering mechanism, the grinding table and the wafer cleaning mechanism are coated with hydrophobic coatings.

Through the technical scheme, the top of the mechanism is prevented from being polluted, and the production quality of the wafer is prevented from being influenced.

In summary, the present application includes at least one of the following advantageous technical effects:

(1) According to the wafer conveying device, the centering mechanism, the grinding mechanism and the cleaning mechanism are integrated on the base, and the wafer is driven to be conveyed among all mechanisms through the rotation of the grinding table and the driving of the material taking and placing arm and the rotary loading arm, so that the position accuracy of the wafer in the conveying process is effectively ensured, the concentricity of the wafer and the grinding mechanism is further ensured, and the automation degree is higher;

(2) This application washs the grinding table of front end through the mesa wiper mechanism that sets up on the frame in the operation of the grinding mechanism of rear end, prevents to grind waste material and dust and gathers on grinding table, and then influences the production quality of follow-up wafer.

Drawings

FIG. 1 is a top view of the structure of the present application.

The numbering in the figures illustrates:

1. a machine base; 2. a wafer cassette holder; 3. a grinding table; 31. rotating the large table top; 32. rotating the small table top; 4. a centering mechanism; 5. a wafer cleaning mechanism; 6. a grinding mechanism; 61. mounting the upright post; 62. grinding the head; 7. taking and placing a material arm; 8. rotating the loading arm; 9. a table top cleaning mechanism; 91. a support beam; 92. rotating the cleaning head; 10. thickness detection device.

Detailed Description

The technical solution in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application; it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all embodiments, and all other embodiments obtained by those of ordinary skill in the art without any inventive work based on the embodiments in the present application belong to the protection scope of the present application.

In the description of the present application, it should be noted that the terms "upper", "lower", "inner", "outer", "top/bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present application. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "sleeved/connected," "connected," and the like are to be construed broadly, e.g., "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in this application will be understood to be a specific case for those of ordinary skill in the art.

Example 1:

the present application is described in further detail below with reference to fig. 1.

The embodiment of the application discloses full-automatic wafer back attenuate machine, including frame 1, the front end of frame 1 is provided with wafer box frame 2, the middle part of frame 1 is provided with grinding table 3, it is provided with centering mechanism 4 and wafer wiper mechanism 5 to lie in between wafer box frame 2 and the grinding table 3 on the frame 1, the rear end of frame 1 is provided with grinding mechanism 6, grinding table 3 includes rotatory big mesa 31 and the three little mesa 32 of rotation that sets up along the center pin rotational symmetry in its top, lie in wafer box frame 2 on the frame 1, the geometric centre position of centering mechanism 4 and wafer wiper mechanism 5 three is provided with gets material arm 7, lie in centering mechanism 4 on the frame 1, be provided with rotatory loading arm 8 between wafer wiper mechanism 5 and the grinding table 3, the front end one side that lies in grinding table 3 on the frame 1 is provided with mesa wiper mechanism 9.

Referring to fig. 1, the table top cleaning mechanism 9 includes a supporting beam 91 and a rotary cleaning head 92 slidably connected to one side of the supporting beam, and a vertical projection position of the rotary cleaning head 92 corresponds to the rotary small table top 32, so as to achieve automatic cleaning of the top of the grinding table 3 and prevent the grinding waste and dust from accumulating on the grinding table 3; the grinding mechanism 6 comprises an installation upright post 61 and two grinding heads 62 arranged at the front end of the installation upright post, the two grinding heads 62 are respectively a rough grinding head and a fine grinding head, the positions and the intervals of the two grinding heads 62 respectively correspond to the small rotary table top 32, the grinding heads 62 are in sliding connection with the installation upright post 61 through high-precision lead screw guide rail devices, the grinding heads 62 move along the vertical direction at the front side of the installation upright post 61 under the action of the high-precision lead screw guide rail devices to realize the control of grinding thickness, and the grinding quality and the grinding efficiency are further improved by arranging the two grinding heads 62 for rough grinding and fine grinding; the machine base 1 is provided with a thickness detection device 10 at the position corresponding to the grinding head 62 so as to realize real-time detection and precise control of the grinding thickness and automatically control the end point according to the detected thickness; the wafer cleaning mechanism 5 comprises a washing device and a drying device, the thinned wafer is cleaned by spraying deionized water through the washing device, and water remained on the wafer is removed through the drying device; the top surfaces of the centering mechanism 4, the grinding table 3 and the wafer cleaning mechanism 5 are coated with hydrophobic coatings, so that the top of the mechanism is prevented from being polluted, accumulated and polluted, and the production quality of wafers is prevented from being influenced.

The implementation principle of the full-automatic wafer back thinning machine in the embodiment of the application is as follows: when the wafer grinding device is used, a wafer box loaded with wafers to be processed is placed on a wafer box frame 2, the opening of the wafer box is made to face a material taking and placing arm 7, the material taking and placing arm 7 takes the wafers to be processed in the wafer box one by one, the material taking and placing arm 7 rotates, the wafers to be processed are conveyed to a centering mechanism 4, the centering mechanism 4 centers the wafers, after centering is completed, a rotating loading arm 8 rotates to the upper portion of the centering mechanism 4, the wafers are taken out, the rotating loading arm 8 drives the wafers to move to the top of a grinding table 3, the position of a small rotating table surface 32 is adjusted by controlling rotation of a large rotating table surface 31, the small rotating table surface 32 is overlapped with the wafers, the rotating loading arm 8 releases the wafers to be placed in the center of the small rotating table surface 32, the large rotating table surface 31 rotates to drive the wafers to move to the lower portion of a grinding head 62, two grinding heads 62 are arranged, coarse grinding is firstly carried out on the wafers, after coarse grinding is completed, the large rotating table surface 31 rotates, and drives the wafers after coarse grinding to move to the next grinding head 62 for fine grinding;

the machine base 1 is provided with the thickness detection devices 10 at the rough grinding position and the fine grinding position, when a wafer is ground, the detection heads of the thickness detection devices 10 rotate to the edge of the wafer, the grinding thickness is detected in real time, the real-time detection and the precise control of the grinding thickness are realized, the grinding end point can be automatically controlled according to the detected thickness, and the automation degree of the equipment is further improved;

after grinding is finished, the rotary large table-board 31 continues to rotate to drive the wafer to move to an initial position, the rotary loading arm 8 absorbs the wafer and transmits the wafer to the wafer cleaning mechanism 5, a washing nozzle in the wafer cleaning mechanism 5 sprays deionized water to wash the surface of the wafer, after washing is finished, a drying device removes water stains on the surface of the wafer, then the material taking and placing arm 7 moves to the wafer cleaning mechanism 5, the processed wafer is taken and placed back to a wafer box;

correspondingly, the table top cleaning mechanism 9 positioned at the front end cleans the rotating table top during grinding, and prevents dust and dirt generated by grinding from polluting subsequent wafers.

The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: all equivalent changes made according to the structure, shape and principle of the present application shall be covered by the protection scope of the present application.

Claims (6)

1. The utility model provides a full-automatic wafer back attenuate machine, includes frame (1), its characterized in that: the front end of frame (1) is provided with wafer cassette holder (2), the middle part of frame (1) is provided with grinding table (3), lie in on frame (1) be provided with centering mechanism (4) and wafer wiper mechanism (5) between wafer cassette holder (2) and grinding table (3), the rear end of frame (1) is provided with grinding mechanism (6), grinding table (3) is including rotatory big mesa (31) and its top three rotatory little mesa (32) that set up along center pin rotational symmetry, lie in on frame (1) wafer cassette holder (2), centering mechanism (4) and wafer wiper mechanism (5) three's geometric centre position is provided with gets puts material arm (7), lie in on frame (1) be provided with rotatory loading arm (8) between centering mechanism (4), wafer wiper mechanism (5) and grinding table (3), lie in frame (1) the front end one side of grinding table (3) is provided with mesa wiper mechanism (9).

2. The full-automatic wafer back thinning machine of claim 1, characterized in that: the table top cleaning mechanism (9) comprises a support beam (91) and two rotary cleaning heads (92) connected to one side of the support beam in a sliding mode, and the vertical projection positions of the rotary cleaning heads (92) correspond to the rotary small table top (32).

3. The full-automatic wafer back thinning machine of claim 1, characterized in that: the grinding mechanism (6) comprises an installation upright post (61) and grinding heads (62) arranged at the front end of the installation upright post, the grinding heads (62) are two, namely a rough grinding head and a fine grinding head respectively, the positions and the intervals of the grinding heads (62) correspond to the rotary small table board (32) respectively, and the grinding heads (62) are connected with the installation upright post (61) in a sliding mode through high-precision lead screw guide rail devices.

4. The full-automatic wafer back thinning machine of claim 3, wherein: and the machine base (1) is provided with a thickness detection device (10) at the position corresponding to the grinding head (62).

5. The full-automatic wafer back thinning machine according to claim 1, characterized in that: the wafer cleaning mechanism (5) comprises a flushing device and a drying device.

6. The full-automatic wafer back thinning machine of claim 1, characterized in that: the top surfaces of the centering mechanism (4), the grinding table (3) and the wafer cleaning mechanism (5) are coated with hydrophobic coatings.

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