CN218182197U

CN218182197U - Power module and inverter and electromechanical device including the same

Info

Publication number: CN218182197U
Application number: CN202221856501.6U
Authority: CN
Inventors: 邢欢
Original assignee: Bosch Automotive Products Suzhou Co Ltd
Current assignee: Bosch Automotive Products Suzhou Co Ltd
Priority date: 2022-07-19
Filing date: 2022-07-19
Publication date: 2022-12-30
Anticipated expiration: 2032-07-19

Abstract

The utility model relates to a power module and including its dc-to-ac converter and electromechanical device. The power module includes: the heat spreader comprises a circuit board, wherein one or more heat spreader plates are embedded on the circuit board, and each heat spreader plate is provided with a first surface and a second surface which are opposite to each other; a semiconductor device mounted on the first surface and electrically connected to a circuit on the circuit board; and a heat spreader disposed in abutment with the second surface for forming a heat transfer path from the semiconductor device to the heat spreader via the heat spreader plate. The power module can enhance the heat dissipation performance, promote the improvement of the system integration level and the working performance, and realize more compact layout.

Description

Power module and inverter and electromechanical device including the same

Technical Field

The utility model relates to an electron device technical field especially relates to power module and dc-to-ac converter and electromechanical device including it.

Background

As electronic technology has developed, a large number of electronic devices have been used in many devices, and these electronic devices often generate some heat energy during operation, and sometimes even generate and accumulate a large amount of heat energy. In order to avoid performance problems caused by the operation of these devices and their electronic devices in an excessively high temperature environment, the prior art provides many technical means for heat dissipation treatment. For example, it is desirable to continuously improve the heat dissipation problem of electronic devices by using a Copper-clad substrate having better thermal conductivity in some applications, or a ceramic substrate having better thermal conductivity in other applications, using a DBC (Direct Bonding) process.

After extensive research, the present application finds that there is still room for improvement and further improvement in existing electromechanical devices and components, such as heat dissipation, compactness of spatial layout, performance assurance and optimization, cost control, etc.

SUMMERY OF THE UTILITY MODEL

In view of the above, the present invention provides a power module and an inverter and an electromechanical device including the same, so that one or more of the above problems and other problems in the prior art may be solved or at least alleviated, or an alternative technical solution may be provided.

First, according to an aspect of the present invention, there is provided a power module, including:

the circuit board is embedded with one or more soaking plates, and the soaking plates are provided with a first surface and a second surface which are opposite to each other;

a semiconductor device mounted on the first surface and electrically connected to a circuit on the circuit board; and

a heat spreader disposed against the second surface to form a heat transfer path from the semiconductor device to the heat spreader via the heat spreader plate.

In the power module according to the present invention, optionally, the soaking plate has a vacuum chamber and a heat transfer medium located in the vacuum chamber, an evaporation chamber and a siphon structure are provided in the vacuum chamber, the heat transfer medium is evaporated in the evaporation chamber after the heat transfer from the semiconductor device is absorbed by the first surface, and returns to the evaporation chamber after at least contacting the condensation of the second surface via the siphon structure.

In a power module according to the present invention, optionally, the first surface is not smaller than a surface of the semiconductor device in mounting contact with the first surface; and/or the heat sink is arranged parallel to the direction of the second surface of the circuit board, and has a heat dissipation surface no smaller than the size of the circuit board on the side abutting against the second surface.

In the power module according to the present invention, optionally, the circuit board is provided with a mounting hole penetrating through a thickness thereof, the soaking plate is embedded in the mounting hole and has substantially the same thickness as the circuit board, and/or the semiconductor device is attached to the first surface by sintering, bonding or welding, and/or the heat sink is welded to the second surface.

In the power module according to the present invention, optionally, the power module has a housing made of an insulating material and arranged to at least partially cover the circuit board and the semiconductor device, the insulating material including a silicone or a thermosetting resin material.

In the power module according to the present invention, optionally, the circuit board is provided with a power interface, an input interface and an output interface, the power module is connected to an input power source via the power interface, and receives an input signal via the input interface and forms an output signal after being processed by the control unit provided on the circuit board and the semiconductor device, and the output signal is output outwards via the output interface; and/or the circuit board is a single-layer or multi-layer printed circuit board.

In the power module according to the present invention, optionally, the semiconductor device includes a Field Effect Transistor (FET) or an Insulated Gate Bipolar Transistor (IGBT), and the control unit and the semiconductor device are configured to convert the input power into an output voltage signal output from the output interface according to the input signal.

According to still another aspect of the present invention, there is also provided an inverter comprising a power module as described in any of the above, the power module being provided with a plurality of insulated gate bipolar transistors electrically connected for controlling the inverter to perform a conversion from a direct voltage to an alternating voltage or from an alternating voltage to a direct voltage.

According to the utility model discloses another aspect still provides an electromechanical device, and it includes:

a power module as claimed in any one of the preceding claims; and

a working component electrically connected with the output interface of the power module.

In the electromechanical device according to the present invention, optionally, the working component includes a motor, and the motor operates by receiving an output signal from the output interface.

Adopt the utility model discloses a power module not only can further strengthen heat dispersion, promotes to improve system integration degree and working property, realizes compacter overall arrangement to reduce cost. The utility model discloses a power module working property is stable, and the range of application is extensive, is suitable for very much to dispose in the electromechanical device of many types and uses.

Drawings

Fig. 1 is a schematic diagram of an embodiment of a power module according to the present invention in an application example.

Fig. 2 is a schematic diagram of another embodiment of a power module according to the present invention in an application example.

Fig. 3 is a schematic diagram of an inverter according to the present invention, in which the working components connected to the inverter are also shown.

Detailed Description

Referring to fig. 1, a schematic representation of an embodiment of a power module according to the present invention in a specific implementation is shown. In this embodiment shown in fig. 1, the power module 100 may include a circuit board 10, a semiconductor device 12 (e.g., a field effect transistor or an insulated gate bipolar transistor such as a MOSFET, an IGBT, etc.) electrically connected to a circuit on the circuit board 10, and a heat sink 13 for dissipating heat from the power module 100, wherein a thermal spreader (VC) 11 is specially embedded on the circuit board 10, and a better and efficient heat dissipation effect for the semiconductor device 12 may be achieved by using the thermal spreader 11.

Specifically, the Circuit Board 10 is used as a support carrier for Circuit connection of electronic components on the power module 100, and may be implemented by a single-layer Printed Circuit Board (PCB), a multi-layer Printed Circuit Board, or other Circuit boards, and for simplicity, different layers or portions of the PCB, such as an outer copper layer, a copper foil layer, and a pad, are generally indicated by reference numeral 15 in fig. 1 and 2. As shown in fig. 1, one, two or more soaking plates 11 may be embedded at suitable positions on the circuit board 10 according to application requirements, for example, corresponding mounting holes may be formed on the circuit board 10 as required, for example, through holes penetrating through the entire thickness of the circuit board 10 are formed, and then the soaking plates 11 are embedded in the corresponding mounting holes. By way of example, the vapor chamber 11 may be made of a material with good thermal conductivity, such as copper, aluminum or aluminum alloy, and may be configured to have a vacuum chamber, and an evaporation chamber and a siphon structure (such as capillary conduit, micro-groove, wick, etc.) are disposed in the vacuum chamber, and a thermal conductive medium (such as water, such as deionized water, etc.) is filled in the vacuum chamber, so that a good heat dissipation and cooling effect can be achieved for the electronic components on the power module 100 by virtue of the phase change and flow motion of the thermal conductive medium in the vacuum chamber, which will be described in more detail later.

The soaking plate 11 fitted to the circuit board 10 has two opposing surfaces, i.e., a first surface 111 and a second surface 112. The semiconductor device 12 may be attached to the first surface 111 and the heat sink 13 may be arranged to abut on the second surface 112, thereby forming a heat dissipation transfer path. By way of illustration, the semiconductor device 12 may be attached to the first surface 111 of the heat spreader plate 11 by, for example, sintering (e.g., silver sintering), bonding, or soldering, such as the surface of the semiconductor device 12 in attachment contact with the first surface 111 may optionally be less than or equal to the first surface 111, in order to facilitate better heat dissipation for the semiconductor device 12; in addition, the heat spreader 13 may be attached to the second surface 112 of the soaking plate 11 in any feasible manner, such as soldering, for example, the heat spreader 13 may optionally be disposed in parallel arrangement with both the circuit board 10 in a direction along the second surface 112 so as to facilitate a relatively large heat dissipating contact area. It should be noted that the connection of the two surfaces of the soaking plate 11 with the semiconductor device 12 and the heat sink 13, respectively, is allowed in the present invention in any other feasible manner. Furthermore, for the heat sink 13, it is generally conceivable to use a suitable material having good heat-conducting properties, such as copper, aluminum, iron or a metal alloy.

In this manner, a heat transfer path from the semiconductor device 12 to the heat spreader 13 via the soaking plate 11 can be formed. For example, in connection with the above exemplary description regarding the optional configuration of the soaking plate 11 to have an evaporation chamber and a siphon structure, when the semiconductor device 12 generates heat after power-on starts to work, the heat-conducting medium in the vacuum chamber of the soaking plate 11 will transfer and absorb the heat from the first surface 111 in mounting contact with the semiconductor device 12 via the above-mentioned heat transfer path, and will then evaporate in the evaporation chamber to form a vapor phase, and then will generate a condensation phenomenon upon cooling when a portion of the heat-conducting medium therein contacts the relatively cool second surface 112 or other cooler portion in the vacuum chamber, thereby transferring the heat absorbed in the previous evaporation process to the heat sink 13 via the second surface 112; meanwhile, the condensed heat-conducting medium cooling liquid returns to the evaporation chamber by means of a siphon structure in the vacuum cavity and then evaporates again to form a gas phase. This cycle is repeated, and the above process is repeated inside the soaking plate 11, so that the cooling effect on the semiconductor device 12 itself is achieved by the above heat transfer path from the semiconductor device 12 to the heat sink 13 via the soaking plate 11, and the temperature of the component adjacent to the semiconductor device 12 is also reduced.

Compared with other conventional temperature reduction structures, the soaking plate 11 has the characteristics and advantages of more uniform temperature distribution, larger condensation area, excellent heat dissipation capability and the like, and particularly can achieve thermal conductivity far superior to that of metal (for example, 5000W/(m × K) or higher), so that the semiconductor device 12 can be effectively cooled more rapidly and uniformly, and the overall temperature control is promoted to be more uniform and consistent.

With continued reference to fig. 1, various possible interfaces, such as a power interface 17, an input interface 18, an output interface 19, etc., may be provided on the circuit board 10, for example, an input power and an input signal from outside the power module 100 may be introduced into the power module 100 through the power interface 17 and the input interface 18, respectively. It is exemplarily shown in fig. 1 that the power interface 17 can be electrically connected to a component such as a dc electrical connector 300 through, for example, a flexible electrical conductor 30, and the dc electrical connector 300 can be connected to a component such as an electromagnetic filter 400 (which may have a PCB control board 41 for electromagnetic filter control processing) through, for example, a flexible electrical conductor 40; then, the control unit and the semiconductor device 12 provided on the circuit board 10 for logic and/or power control and the like are used to process the input signal to form an output signal, and the output signal is outputted to the outside via the output interface 19 to be supplied to a desired application. For example, when the semiconductor device 12 is configured as a field effect transistor (such as a MOSFET) or an igbt, such a semiconductor device and the above-mentioned control unit can be used to convert an input power source into a corresponding output voltage signal according to an input signal, and such an output voltage signal can be provided to the working component 200, which is exemplarily illustrated in fig. 1 by using a character M for the working component 200, or used for a component such as an inverter, so as to implement a voltage conversion process from a dc voltage to an ac voltage, or vice versa, according to application requirements.

It should be noted that, unlike the conventional application method in the prior art that the circuit substrate is provided in the AMB method, etc. and is connected to the separated PCB board for implementing logic control through the flexible conductor, the circuit board 10 is configured to be directly embedded into the soaking board in the solution of the present invention, thereby advantageously avoiding the board-to-board connection method that uses an additional flexible conductor to connect the circuit substrate and the logic control PCB board, promoting performance improvement in terms of data transmission speed, etc., and improving the overall integration of the system to save space, reducing procurement of parts (such as AMB, flexible conductor, etc.) and required process steps, and reducing overall cost.

By way of example, the power module 100 may be provided with a housing portion having insulating properties, which are correspondingly indicated in fig. 1 with reference numeral 16. Depending on the application, the housing 16 may be made of a material such as silicone, thermosetting resin, or other suitable materials, and the circuit board 10 and the semiconductor device 12 may be covered by the housing 16 in whole or in part as needed for the purpose of insulating and protecting them, and preventing dust and other foreign matter from entering.

It should be understood that the above description of these components in power module 100 is for exemplary purposes only. For example, the specific type, functional configuration, number, and arrangement position of the circuit board 10, the soaking plate 11, the semiconductor device 12, and the heat sink 13 may be set according to different implementation situations, and the present invention is not limited thereto.

For example, while it is shown in the embodiment of fig. 1 that two semiconductor devices 12 may be disposed on a circuit board 10 and each of them may be subjected to a cooling process by providing two soaking plates 11 embedded in the circuit board 10, it is shown in the embodiment of fig. 2 that only one semiconductor device 12 and a corresponding soaking plate 11 are disposed on the circuit board 10. In addition, for one semiconductor device 12, it may be subjected to a heat-sink process using one or several independent soaking plates 11.

As another example, as an alternative case, the heat sink 13 may be provided to have a heat radiation surface larger than or equal to the size of the circuit board 10 on the side facing the second surface 112, in order to facilitate the overall heat radiation effect. For example, as shown in fig. 1, it is contemplated that other components may be disposed on the heat sink 13 for performing a heat dissipation process on one or more components, such as the dc connector 300, the electromagnetic filter 400, etc., to promote a better overall heat dissipation and temperature reduction effect of the system as a whole.

According to the technical scheme of the utility model, still provide an inverter. The power module according to the present invention may be provided in the inverter, and a plurality of IGBTs may be provided in the power module, and by electrically connecting these IGBTs to each other, it may be used to control the inverter to realize conversion of direct-current voltage into alternating-current voltage, or to realize a voltage conversion operation from alternating-current voltage to direct-current voltage.

In this regard, a block diagram of an embodiment of an inverter is exemplarily shown in fig. 3, in which other parts of the inverter 500 are omitted except for the IGBT power module part composed of IGBTs in order to simplify the drawing. As shown in fig. 3, for example, six IGBTs are grouped into a group by two to form a three-phase bridge arm, so that they are electrically connected to form an IGBT power module, which is used to control the inverter 500 to perform the conversion between ac and dc voltages, and the output voltage converted by the inverter 500 can be provided to the operating component 200 to operate.

Additionally, according to the utility model discloses a design concept still provides an electromechanical device. In this electromechanical device, a working part and a power module according to the invention can be provided, which working part is electrically connected to the output interface of the power module in order to perform a working operation upon receiving an output signal from this output interface, which is shown by way of example in the embodiment of fig. 1.

As mentioned above, since the power module according to the present invention has the outstanding heat dissipation and cooling performance as discussed above, it is very favorable to promote the power module and the working component to work stably together, thereby ensuring that the electromechanical device has good working performance. It should be understood that the electromechanical device according to the present invention is of a wide variety of types, and may for example include, but is not limited to, various types of motors, compressors, hydraulics, etc.

Claims

1. A power module (100), comprising:

the circuit board comprises a circuit board (10), wherein one or more soaking plates (11) are embedded on the circuit board (10), and the soaking plates (11) are provided with a first surface (111) and a second surface (112) which are opposite to each other;

a semiconductor device (12), the semiconductor device (12) being attached to the first surface (111) and electrically connected to a circuit on the circuit board (10); and

a heat spreader (13), the heat spreader (13) being disposed against the second surface (112) to form a heat transfer path from the semiconductor device (12) to the heat spreader (13) via the heat spreader plate (11).

2. The power module (100) according to claim 1, wherein the soaking plate (11) has a vacuum chamber and a heat conducting medium located in the vacuum chamber, wherein an evaporation chamber and a siphon structure are arranged in the vacuum chamber, and wherein the heat conducting medium is evaporated in the evaporation chamber after conducting heat absorption from the semiconductor device (12) via the first surface (111) and returns to the evaporation chamber via the siphon structure after condensing in contact with at least the second surface (112).

3. The power module (100) of claim 1, wherein the first surface (111) is no smaller than a surface of the semiconductor device (12) in mounting contact with the first surface (111); and/or the heat sink (13) is arranged parallel to the direction of the circuit board (10) along the second surface (112), and the heat sink (13) has a heat dissipation surface on the side abutting the second surface (112) that is not smaller than the size of the circuit board (10).

4. The power module (100) according to claim 1, wherein the circuit board (10) is provided with a mounting hole extending through a thickness thereof, the heat spreader (11) is embedded in the mounting hole and has substantially the same thickness as the circuit board (10), and/or the semiconductor device (12) is attached to the first surface (111) by sintering, bonding or soldering, and/or the heat sink (13) is soldered to the second surface (112).

5. The power module (100) of claim 1, wherein the power module (100) has a housing (16), the housing (16) being made of an insulating material and arranged to at least partially cover the circuit board (10) and the semiconductor device (12), the insulating material being a silicone or a thermosetting resin material.

6. The power module (100) according to any one of claims 1-5, wherein the circuit board (10) is provided with a power interface (17), an input interface (18) and an output interface (19), the power module (100) is connected with an input power source via the power interface (17), and receives an input signal via the input interface (18) and forms an output signal after being processed by a control unit arranged on the circuit board (10) and the semiconductor device (12), and the output signal is output outwards via the output interface (19); and/or the circuit board (10) is a single or multilayer Printed Circuit Board (PCB).

7. The power module (100) according to claim 6, wherein the semiconductor device (12) comprises a Field Effect Transistor (FET) or an Insulated Gate Bipolar Transistor (IGBT), and the control unit and the semiconductor device (12) are arranged to convert the input power supply into an output voltage signal output from the output interface (19) in dependence of the input signal.

8. An inverter, characterized in that it comprises a power module according to any one of claims 1-7, which power module is provided with a plurality of Insulated Gate Bipolar Transistors (IGBTs) electrically connected for controlling the inverter for conversion from direct voltage to alternating voltage or vice versa.

9. An electromechanical device, comprising:

the power module (100) of any of claims 1-7; and

a working component (200), the working component (200) being electrically connected with an output interface (19) of the power module (100).

10. The electromechanical device according to claim 9, wherein said working member (200) comprises a motor, said motor being operated by receiving an output signal from said output interface (19).